JP3158593B2 - Dielectric filter - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric filter having a ground electrode and a resonance electrode formed on a dielectric substrate or a dielectric block.

[0002]

2. Description of the Related Art A dielectric resonator in which a resonance electrode (inner conductor) is formed inside a dielectric block and a ground electrode (outer conductor) is formed on the outer surface of the dielectric block, and a resonance electrode is formed on the surface of a dielectric substrate. A dielectric resonator in which a (strip line) is formed and an earth electrode is formed on the opposite surface is used as a filter in a microwave band, for example.

For example, in a discrete type dielectric filter using a plurality of dielectric resonators, a plurality of dielectric resonators, a coil for coupling between resonators, a capacitor, and a board on which these are mounted are used as a case. It is housed inside.

In the dielectric filter having such a structure, various kinds of dielectric resonators, coils and capacitors are used in accordance with required specifications. In an integrated dielectric filter, a plurality of resonators are formed on a dielectric block or a dielectric substrate that is integrated from the beginning or integrated by assembly, and is used as, for example, a multi-stage dielectric filter. .

[0005]

In the former discrete type dielectric filter, discrete components such as a coil and a capacitor are required together with a plurality of dielectric resonators.
There are disadvantages in that the number of parts is large and the whole is large, and the assembling work process is complicated. Although the latter type of integrated dielectric filter does not have such a drawback, a filter having limited characteristics can be obtained only by forming the pattern of the resonance electrode or the ground electrode, and a part of the ground electrode (outer conductor) is patterned. When a planar circuit or the like is configured by such a configuration, it is necessary to take some measures against electromagnetic field leakage.

SUMMARY OF THE INVENTION An object of the present invention is to provide a dielectric filter which has a structure of an integral dielectric resonator and is small in size and can easily obtain predetermined characteristics.

[0007]

SUMMARY OF THE INVENTION The present invention provides a substantially rectangular parallelepiped shape.
Form inner conductors on each inner surface inside the dielectric block
The formed inner conductor forming holes are
Arranged in a row, approximately constant distance from each inner conductor formation hole
The outer surface of the separated dielectric block is used as the dielectric substrate bonding surface,
Dielectric block excluding the joint surface and the open end of the inner conductor
Forming an outer conductor on the outer surface of the substrate, forming a dielectric substrate and the dielectric substrate
Close to the joint surface with the joint surface, near the open end of the inner conductor.
Between the open end and the vicinity of the open end.
Inductor electrode that connects between the capacitor electrode and the capacitor electrode
And remove the surface bonded to the dielectric substrate bonding surface.
Forming an outer conductor on the outer surface of the dielectric substrate,
Resonators are connected to each other by the capacitor electrode and the inductor electrode.
A dielectric filter connected via poles is formed .

[0008]

[0009]

[0010]

[0011]

[0012]

The dielectric filter according to claim 1 , wherein
Each inner conductor in the electric block is a resonator
Acting as these multiple resonators on a dielectric substrate
Connected through the capacitor and inductor electrodes
And acts as a filter having a band rejection region.

[0013]

[0014]

[0015]

[0016]

[0017]

[0018]

<First Embodiment> FIGS. 1 to 4 show the configuration of a three-stage band rejection filter according to a first embodiment of the present invention.

FIG. 1 is a perspective view of the filter, and FIG. 2 is an exploded perspective view before the filter is assembled. In FIG. 2, reference numeral 1 denotes a substantially hexahedral dielectric block, and reference numeral 4 denotes a dielectric substrate. The dielectric block 1 is provided with inner conductor forming holes 5, 6, and 7, and the inner conductors are formed on the inner surfaces of the inner conductor forming holes 5, 6, and 7, respectively. An outer conductor 12 is formed on the outer surface (five surfaces) of the dielectric block 1 except for the surface facing the dielectric substrate 4. On the other hand, an additional electrode pattern described later is formed on the surface of the dielectric substrate 4 facing the dielectric block 1. The outer conductor 12 is formed on five surfaces other than the additional electrode formation surface, and signal input / output electrodes (15 and the like) are formed on a part of the side surface. The dielectric filter shown in FIG. 1 is obtained by joining the dielectric block 1 and the dielectric substrate 4 shown in FIG.

FIG. 3 is a plan view of the dielectric substrate 4 shown in FIG. In FIG. 3, C11, C12 and C13 are capacitor electrodes which are capacitively coupled to the inner conductors in the inner conductor forming holes 5, 6, and 7 shown in FIGS. L2 is an inductor electrode connecting between the capacitor electrodes.

FIG. 4 shows an equivalent circuit of the dielectric filter having the above configuration. In FIG. 4, R1, R
2, R3 are resonators formed by the inner conductors in the inner conductor forming holes 5, 6, 7 shown in FIG. 1, and C1, C2, C3 are between the capacitor electrodes C11, C12, C13 shown in FIG. The formed capacitors L1 and L2 are the electrodes L shown in FIG.
1, L2. With this configuration, 1
It acts as a three-stage band rejection filter having signal input / output terminals 4 and 15.

Similar characteristics can be obtained by forming an additional electrode on the surface of the dielectric block 1 facing the substrate 4.

<Second Embodiment> FIGS. 5 to 8 show the configuration of a three-stage bandpass filter according to a second embodiment of the present invention.

FIG. 5 is an external perspective view, and FIG. 6 is an exploded perspective view before assembly. In FIG. 6, reference numeral 1 denotes a substantially hexahedral dielectric block, and reference numeral 4 denotes a dielectric substrate. Dielectric block 1
Are provided with inner conductor forming holes 5, 6, and 7,
Inner conductors are formed on the inner surfaces of 6,7. An outer conductor 12 is formed on the outer surface (five surfaces) of the dielectric block 1 except for the surface facing the dielectric substrate 4. On the other hand, an additional electrode pattern described later is formed on the surface of the dielectric substrate 4 facing the dielectric block 1. Outer conductors 12 are formed on five surfaces other than the additional electrode formation surface, and signal input / output electrodes (1
5). Unlike the first embodiment shown in FIG. 2, the open end of the inner conductor is formed to extend to the bottom of the dielectric block 1 in the figure, and a part of the inner conductor is directly connected to the additional electrode pattern. It is composed. This figure 6
The dielectric filter shown in FIG. 5 is obtained by joining the dielectric block 1 and the dielectric substrate 4 shown in FIG.

FIG. 7 is a plan view of the dielectric substrate 4 shown in FIG. In FIG. 7, C1, C2, C3, and C4 denote capacitor electrodes formed on the plane of the dielectric substrate 4,
1, E2 and E3 are inner conductor forming holes 5, 6, 7 shown in FIG.
Are connected to the inner conductor that is drawn out near the opening surface. In a state where the dielectric block 1 and the dielectric substrate 4 are joined, the open portions of the three inner conductors are connected to the electrodes E1, E, respectively.
2, E3.

FIG. 8 is an equivalent circuit diagram of the dielectric filter described above. 8, R1, R2, and R3 are resonators formed by inner conductors in the inner conductor forming holes 5, 6, and 7 shown in FIGS. 5 and 6, and C1, C2, C3, and C4 are electrodes C1 and C1 shown in FIG. It is a capacitor composed of C2, C3 and C4. With this configuration, it functions as a three-stage bandpass filter having the signal input / output terminals 14 and 15.

Third Embodiment In the second embodiment, a band-pass filter is formed by using the dielectric block shown in FIG. 6 and the dielectric substrate shown in FIG. A band rejection filter can also be configured by using an additional electrode pattern as shown in FIG. In FIG. 9, E1, E2, E3 are electrodes directly connected to the open portion of the inner conductor, and C1, C2, C3 are electrodes E1,
Capacitor electrodes constituting a capacitor between E2 and E3, and L1 and L2 are inductor electrodes. By using a dielectric substrate having such an additional electrode pattern, it functions as a three-stage band rejection filter as shown in FIG.

Next, examples of a dielectric filter which is polarized using an additional electrode pattern will be described as fourth to seventh embodiments.

<Fourth Embodiment> FIG. 10 is a perspective view of a dielectric filter according to a fourth embodiment, and FIG. 11 is an exploded perspective view before assembling the same. In FIG. 11, reference numeral 1 denotes a dielectric block, in which inner conductor forming holes 5 to 9 are provided, and an additional electrode pattern indicated by E10 is formed on a joint surface with the dielectric substrate. A portion indicated by E11 of the additional electrode E10 is capacitively coupled to the inner conductor in the inner conductor forming hole 6, and E12 is capacitively coupled to the inner conductor in the inner conductor forming hole 8.

Therefore, the inner conductors in the inner conductor forming holes 6 and 8 are capacitively coupled via the additional electrode E10. Further, an open end of the inner conductor in each of the inner conductor forming holes 5 to 9 has a tip capacitance, and the resonators are comb-line coupled. On the other hand, in the figure, reference numeral 4 denotes a dielectric substrate, on which the outer conductors 12 are formed on five surfaces excluding the facing surface of the dielectric block 1. Further, electrode patterns are provided which are capacitively coupled to the inner conductors in the inner conductor forming holes 5 and 9 in a state of being joined to the dielectric block 1, and these electrodes are connected to the signal input / output terminals 14 , 15. By joining the dielectric block 1 and the dielectric substrate 4, FIG.
To obtain an integrated dielectric filter as shown in FIG. In this case 5
Since the second stage and the fourth stage among the stages are capacitively coupled, they function as a band-pass filter having a pole on the low frequency side.

<Fifth Embodiment> FIG. 12 is a perspective view of a dielectric filter according to a fifth embodiment, and FIG. 13 is an exploded perspective view of the dielectric filter before assembly. In FIG. 13, 1 is a dielectric block, and 4 is a dielectric substrate. The difference from the fourth embodiment shown in FIGS. 10 and 11 is that the additional electrode is
It is provided on the side. In this case, in a state where the dielectric block 1 and the dielectric substrate 4 are joined, the additional electrode E10 capacitively couples the inner conductors in the inner conductor forming holes 6 and 8 to form the electrode 14.
'And 15' are capacitively coupled to the inner conductors in the inner conductor forming holes 5 and 9, respectively.

<Sixth Embodiment> FIG. 14 is a perspective view of a dielectric filter according to a sixth embodiment, and FIG. 15 is an exploded perspective view before assembling the same.

In FIG. 15, reference numeral 1 denotes a dielectric block, and 4 denotes a dielectric substrate. The dielectric block 1 is provided with inner conductor forming holes 5 to 8. On the dielectric substrate 4, additional electrodes E13 and E14 are formed on the joint surface with the dielectric block 1. The additional electrode E13 is capacitively coupled between the inner conductors in the inner conductor forming holes 5 and 6 in a state of being joined to the dielectric block 1, and E14.
Is capacitively coupled between the inner conductors in the inner conductor forming holes 7 and 8. By joining the dielectric block 1 and the dielectric substrate 4, an integrated dielectric filter as shown in FIG. 14 is obtained. Thus, among the four stages, between the first stage and the second stage and between the third stage and the fourth stage
Because of the capacitive coupling between the stages, a bandpass filter having a pole in the high band is obtained.

<Seventh Embodiment> FIG. 16 is a perspective view of a dielectric filter according to a seventh embodiment, and FIG. 17 is an exploded perspective view of the dielectric filter before assembly. In FIG. 17, 1 is a dielectric block, and 4 is a dielectric substrate. The difference from the sixth embodiment shown in FIGS. 14 and 15 is that the dielectric substrate 4 is joined to the dielectric block 1 in the axial direction. Therefore, additional electrodes E13 and E14 are formed on the open surface side of the dielectric block 1 as shown in FIG. By bonding the dielectric substrate 4 to the dielectric block 1, an integrated dielectric filter shown in FIG. 16 is obtained.

In the sixth and seventh embodiments, a band-pass filter has been described as an example. However, the band-elimination filter can be formed with the same structure by changing the pattern of the additional electrode.

Next, examples of a dielectric filter constituted by using a plurality of dielectric substrates will be described as eighth to eleventh embodiments.

<Eighth Embodiment> FIG. 18 is an exploded perspective view of a dielectric filter according to an eighth embodiment before assembly, and FIG.
Is a cross-sectional view after the assembly. In FIG.
Reference numerals 3 and 4 denote dielectric substrates, respectively. Dielectric substrates 2 and 3 have grooves each having a semicircular cross-section on their opposing surfaces, and have inner conductors 16, 17 and 18 formed on their inner surfaces. Outer conductors 12 are formed on the five surfaces of the dielectric substrate 2 except for the surface facing the dielectric substrate 3.
The outer conductor 12 is formed on the side surface. On the other hand, the dielectric substrate 4
, An additional electrode is formed on the opposing surface of the dielectric substrate 3, and the outer conductor 12 is formed on the other five surfaces excluding this surface. In the additional electrodes, Ce11, Ce12, and Ce13 are capacitively coupled to the vicinity of the open ends of the inner conductors 16, 17, and 18, as shown in FIG. Further, L1 and L2 act as inductors.

FIG. 20 is an equivalent circuit diagram of the dielectric filter according to the eighth embodiment. In FIG. 20, R1, R2, R
3 is a resonator formed by the inner conductors 16, 17 and 18 shown in FIG. 18, and Ce1, Ce2 and Ce3 are inner conductors 16, 17 and 18.
And the electrodes Ce11, Ce12, and Ce13. In this manner, the filter functions as a three-stage band rejection filter having the signal input / output terminals 14 and 15.

Although FIGS. 18 to 21 show an example in which the substrates 2 and 3 are separated from each other, as in the first embodiment, the substrates 2 and 3 are separated.
3 may be used as a dielectric block.

<Ninth Embodiment> FIG. 21 is an exploded perspective view of a dielectric filter according to a ninth embodiment before assembling.
Is a sectional view after assembly. 2, 3, 4 in both figures
Are dielectric substrates, respectively. The difference from the eighth embodiment shown in FIG. 18 is that shield electrodes 19 and 20 are arranged between the inner conductors 16, 17 and 18, respectively. By providing the shield electrodes 19 and 20 in this manner, the electromagnetic field generated by the adjacent resonator is reduced by the shield electrode 1.
The coupling between the resonators is reduced by the shields 9 and 20, and the characteristics as a band rejection filter can be secured without increasing the interval between the resonators.

<Tenth Embodiment> FIG. 23 is a sectional view of a dielectric filter according to a tenth embodiment. The difference from the ninth embodiment shown in FIG.
This is to increase the thickness of 0 to increase the shielding effect between the resonators. Such a shield electrode is obtained by forming a groove in each of the dielectric substrates 2 and 3 and burying a conductive material in the groove.

<Eleventh Embodiment> FIG. 24 is an exploded perspective view of a dielectric filter according to an eleventh embodiment before assembling. The structural difference from the example shown in FIG. 21 is that the dielectric electrodes 3, 17, 1
8 and the shielding electrodes 19 and 20 are provided. As described above, a device using a strip line as a resonance electrode can be manufactured by forming a conductor pattern on each dielectric ceramic green sheet and laminating and integrally firing.

In the eighth to eleventh embodiments, the band rejection filter has been described as an example. However, the bandpass filter can be formed with the same structure by changing the shape of the additional electrode.

Next, an example of a composite integrated dielectric filter will be described as a twelfth embodiment.

<Twelfth Embodiment> FIG. 25 is an exploded perspective view of a dielectric filter according to a twelfth embodiment before assembling. In FIG. 25, 1 is a dielectric block, and 4 is a dielectric substrate. The dielectric block 1 has inner conductor forming holes 5 to 11
Are formed, and outer conductors 12 are formed on five surfaces excluding a bonding surface with the dielectric substrate 4. Dielectric block 1 of dielectric substrate 4
The additional electrode patterns indicated by E15 to E21 and L1 and L2 are formed on the bonding surface with respect to. The outer conductor 12 is formed on the other surface, and signal input / output electrodes (13, 15 and the like) are formed to extend on the opposite side (rear surface in the drawing) from the surface on which the additional electrode is formed. In the figure, electrodes E15 and E16 are capacitively coupled between the inner conductors in the inner conductor forming holes 5 and 6, and the electrodes E1 and E16 are electrically connected.
7, E18 capacitively couples the inner conductors in the inner conductor forming holes 7, 8. The electrodes E19, E20, E21 are capacitively coupled to the inner conductors in the inner conductor forming holes 9, 10, 11, respectively.
The electrodes E19 and E20 and the electrodes E20 and E21 are connected by inductors L1 and L2, respectively. With this configuration, the resonator formed by the inner conductor forming holes 5 to 8 functions as a four-stage polarized bandpass filter, and the inner conductor forming holes 9 and 1 are formed.
The resonators 0, 11 act as a three-stage band-stop filter. Such an integrated dielectric filter in which a band-pass filter and a band rejection filter are combined can be used as an antenna duplexer, a demultiplexer / combiner, or the like.

In the example of FIG. 25, both the dielectric block 1 and the dielectric substrate 4 are integrally formed.
Either the dielectric substrate 4 or the dielectric substrate 4 may be divided into two parts. Further, in this example, the duplexer and the demultiplexer / combiner are configured by directly connecting the electrode E18 constituting the final stage of the band-pass filter and the electrode E19 constituting the final stage of the band rejection filter. May not be directly connected, but may be connected by a transmission line for phase matching or a phase shift circuit using L and C. Further, the combination of the two filters may be a combination of bandpass filters or a combination of band rejection filters other than this example.

In the first to twelfth embodiments described above,
Although the opening of the inner conductor or the resonance electrode is formed near the end face of the dielectric block, as shown in FIG. 26, the opening of the inner conductor may be formed inside the dielectric block. 26A is a cross-sectional view passing through two inner conductor forming holes of the dielectric block, and FIG. 26B is a front view of the dielectric block viewed from the short-circuit surface side. Thus, the inner conductor forming holes 5, 6
Inside conductors 16 and 17 are formed therein, and an open portion is provided therein to form a tip capacitance Cs. Thereby, the electromagnetic field leakage can be further suppressed, and the influence of the adjacent metal body can be further suppressed.

Next, a method for adjusting the characteristics of the dielectric filter will be described with reference to FIGS.

FIG. 27 is a front view of the dielectric block as viewed from the short-circuit surface side. Reference numerals C and D denote conductor and dielectric portions on the short-circuit surface. In FIG. 27, the conductor and the dielectric are partially removed in the region of S1 so that the inner conductor forming hole 5 is formed.
Causes the resonance frequency of the resonator to decrease. Similarly, if the conductor and the dielectric are partially removed in the region of S2, the resonance frequency of the resonator due to the inner conductor forming hole 6 decreases. On the other hand, S
If the conductor and the dielectric are partially removed in the region 12, the degree of coupling between the two resonators is reduced. FIGS. 28 and 30 show examples of changes in the coupling coefficient due to deletion of the conductor and the dielectric. As shown in FIG. 28, a conductor deleted portion having a width d was provided at an intermediate position between two coupling holes, and a change in coupling coefficient when the area S was changed was measured. In FIG. 28, a =
2.0 mm, b = 4.0 mm, and c = 5.0 mm.
In FIG. 30, the horizontal axis represents the conductor removal area S, and the vertical axis represents the change ratio of the coupling coefficient when Ko is the coupling coefficient when S = 0 and the coupling coefficient after the conductor is removed is Ka. Thus, the coupling coefficient can be adjusted by the conductor removal area between the inner conductor forming holes on the short-circuit surface. FIGS. 29 and 31 show examples of adjusting the resonance frequency. As shown in FIG. 29, a conductor-deleted portion having a width f and a length g was provided at a predetermined distance from the inner conductor formation hole, and the resonance frequency when the length g was changed was measured. In FIG. 29, a = 2.0 mm and e = 3.0.
mm, f = 0.5 mm. In FIG. 31, the horizontal axis indicates the length g, and the vertical axis indicates the amount of change in the resonance frequency based on the resonance frequency when g = 0. As described above, the resonance frequency can be adjusted by removing the conductor around the inner conductor forming hole on the short-circuit surface.

In the examples shown in FIGS. 27 to 31, a two-stage dielectric resonator is taken as an example, but the present invention can be similarly applied to a dielectric resonator having three or more stages. In this case, as shown in FIG. 32, the distance S between the openings of the
.., S23,... Sn _{n-1 n} are partially removed to adjust the degree of coupling between the resonators by partially removing the conductors and dielectrics, and the conductors and S1, S2, S3. By partially removing the dielectric, the resonance frequency of each resonator can be adjusted.

If the electrode and the dielectric on the opening surface on the side where the inner conductor is opened are partially removed, the storage capacitance between the resonator and the ground is reduced, and the resonance frequency can be adjusted to be increased. Becomes

[0052]

Effects of the Invention] According to the dielectric filter of the present invention, its
Without the need for other additional parts, the number of parts can be greatly reduced and the overall size can be reduced, and the manufacturing cost can be reduced. In addition, since different filter characteristics can be provided by designing an additional electrode layer to be formed in a dielectric, the resonator portion is unitized (standardized), and an arbitrary specification having different specifications depending on the combination with the additional electrode layer is provided. , And the degree of freedom in designing the dielectric filter is greatly improved.

[Brief description of the drawings]

FIG. 1 is a perspective view of a dielectric filter according to a first embodiment.

FIG. 2 is an exploded perspective view before assembling the dielectric filter according to the first embodiment.

FIG. 3 is a plan view of a dielectric substrate used in the dielectric filter according to the first embodiment.

FIG. 4 is an equivalent circuit diagram of the dielectric filter according to the first embodiment.

FIG. 5 is a perspective view of a dielectric filter according to a second embodiment.

FIG. 6 is an exploded perspective view of a dielectric filter according to a second embodiment.

FIG. 7 is a plan view of a dielectric substrate used for a dielectric filter according to a second embodiment.

FIG. 8 is an equivalent circuit diagram of the dielectric filter according to the second embodiment.

FIG. 9 is a plan view of a dielectric substrate used for a dielectric filter according to a third embodiment.

FIG. 10 is a perspective view of a dielectric filter according to a fourth embodiment.

FIG. 11 is an exploded perspective view of a dielectric filter according to a fourth embodiment.

FIG. 12 is a perspective view of a dielectric filter according to a fifth embodiment.

FIG. 13 is an exploded perspective view of a dielectric filter according to a fifth embodiment.

FIG. 14 is a perspective view of a dielectric filter according to a sixth embodiment.

FIG. 15 is an exploded perspective view of a dielectric filter according to a sixth embodiment.

FIG. 16 is a perspective view of a dielectric filter according to a seventh embodiment.

FIG. 17 is an exploded perspective view of a dielectric filter according to a seventh embodiment.

FIG. 18 is an exploded perspective view of a dielectric filter according to an eighth embodiment.

FIG. 19 is a sectional view of a dielectric filter according to an eighth embodiment.

FIG. 20 is an equivalent circuit diagram of a dielectric filter according to an eighth embodiment.

FIG. 21 is an exploded perspective view of a dielectric filter according to a ninth embodiment.

FIG. 22 is a sectional view of a dielectric filter according to a ninth embodiment.

FIG. 23 is a sectional view of a dielectric filter according to a tenth embodiment.

FIG. 24 is an exploded perspective view of a dielectric filter according to an eleventh embodiment.

FIG. 25 is an exploded perspective view of a dielectric filter according to a twelfth embodiment.

26A and 26B are explanatory views of another embodiment, in which FIG. 26A is a sectional view and FIG. 26B is a front view.

FIG. 27 is a front view of a dielectric filter showing a method of adjusting a dielectric filter characteristic.

FIG. 28 is a front view showing an example of deleting conductors for measuring characteristics of a dielectric filter.

FIG. 29 is a partial front view showing an example of deleting a conductor for measuring characteristics of a dielectric filter.

FIG. 30 is a diagram showing a measurement result of a change in a coupling coefficient of a dielectric filter.

FIG. 31 is a diagram showing a measurement result of a resonance frequency change of a dielectric filter.

FIG. 32 is a front view of the dielectric filter.

[Explanation of symbols]

 1-dielectric block 2,3,4-dielectric substrate 5-11-inner conductor forming hole 12-ground electrode (outer conductor) 13,14,15-signal input / output electrode 16-18-resonant electrode (inner conductor) 19,20-Shielding electrode

──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hideyuki Kato 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto, Japan Inside Murata Manufacturing Co., Ltd. (72) Inventor Yukihiro Kitaichi 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto, Japan Inside Murata Manufacturing Co., Ltd. (72) Inventor Hisashi Mori 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Co., Ltd. Inside Murata Manufacturing Co., Ltd. (72) Tatsuya Tsujiguchi 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Co., Ltd. (56) References JP-A-3-254201 (JP, A) JP-A-2-290303 (JP, A) JP-A-4-211501 (JP, A) JP-A-5-251905 (JP) JP-A-4-284003 (JP, A) JP-A-2-145804 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01P 1/205 H01P 1/203

Claims (1)

(57) [Claims] 1. A dielectric block having a substantially rectangular parallelepiped shape.
Multiple inner conductor forming holes with inner conductor formed on each inner surface
Are arranged such that their axes are parallel to each other.
Outside the dielectric block approximately a fixed distance from the inner conductor formation hole
The surface is a dielectric substrate bonding surface, and the bonding surface and the open end of the inner conductor
An outer conductor is formed on the outer surface of the dielectric block excluding the part, and the joining surface between the dielectric substrate and the joining surface of the dielectric substrate is
Close to and near the open end of the inner conductor
Capacitor electrode for generating capacitance and capacitor electrode
Forming an inductor electrode for connecting between the dielectric substrates;
Externally guided to the outer surface of the dielectric substrate except for the surface bonded to the board bonding surface
And a resonator formed by the inner conductor is connected to the capacitor electrode and
And a dielectric filter connected via an inductor electrode .