JP3159909B2 - Method for applying fine frit glass and image display apparatus using fine frit glass - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for applying fine-grained frit glass, more specifically, a method for applying fine-grained frit glass to be used as a fixing material for spacers of an image display device, and a method for producing the same using this method. And a related image display device.

[0002]

2. Description of the Related Art Conventionally, generally, an image display device using an electron-emitting device is operated in a vacuum atmosphere of about 10 ⁻⁶ Torr or more. Therefore, when forming the image display device, an atmospheric pressure resistant structure is required. In particular, in the case of a flat-panel image display device that uses a large-area back plate and a front plate to support atmospheric pressure resistance, the thickness of each plate becomes extremely large, which causes a problem in weight and the like. In order to avoid this, the spacer is arranged as a support between the front plate and the back plate to provide an anti-atmospheric structure, thereby reducing the weight of the image display device.

[0003] The front and rear panels and the support frame and widely PbO-B ₂ O ₃ -based lead titanate was passed through a sieve of 150 to 250 mesh glass powder as the sealing material, such as spacer, such as willemite Frit glass to which a filler that is a low-expansion refractory substance powder is added is used, and welding is performed by heating at approximately 400 to 550 ° C.

There are several types of frit glass depending on the difference between crystalline and non-crystalline frit glass and components, and they can be appropriately selected according to the sealing temperature and the coefficient of thermal expansion of a member to be used. Since frit glass alone is a powder, when applying, it is mixed with an organic solvent or an organic solvent whose viscosity has been adjusted with a binder such as nitrocellulose or acrylic to form a paste-like frit glass mixture, taking into account workability during application. A material having viscosity at room temperature is used. As a method of applying the frit, a dispenser robot that combines a dispenser that discharges a frit paste with a needle and a robot that relatively moves and controls the position of a discharge unit and a member to be coated is used.

Hereinafter, an electron-emitting device used for an electron source of the image display device will be described. 2. Description of the Related Art Conventionally, two types of electron emitting devices, a thermionic electron source and a cold cathode electron source, are known. Field emission type (hereinafter abbreviated as FE) cold electron source,
There are a metal / insulating layer / metal type (hereinafter abbreviated as MIM) and a surface conduction electron-emitting device (hereinafter abbreviated as SCE).

As an example of the FE type, W. P. Dyke
& W. W. Dolan, "Field emissi
on ", Advance in Electron P
physics, 8, 89 (1956) or C.I. A.
Spindt, "Physical Propertyi
es of thin-film field emi
session cathodes with mollyb
denium ", J. Appl. Phys., 47, 5
248 (1976).

As an example of the MIM type, C.I. A. Mea
d, "The tunnel-emission am
prifier ", J. Appl. Phys., 32,
646 (1961).

An example of a surface conduction electron-emitting device is disclosed in M.K.
I. Elinson, RadioEng. Electr
on Phys. , 10, 1290 (1965). The SCE utilizes a phenomenon in which electron emission occurs when a current flows through a small-area thin film formed on a substrate in parallel with the thin film.

As the surface conduction electron-emitting device, a device using an SnO ₂ thin film by Erinson et al.
By a thin film [G. Dittmer: "Thin S
Solid Films ", 9, 317 (1972)],
In ₂ O ₃ / SnO ₂ by thin film [M. Hartw
ell and C.I. G. FIG. Fonstad: "IEEE
Trans. ED conf. ", 519, (19
75)], using a carbon thin film [Hisashi Araki: Vacuum,
26, No. 1, p. 22 (1983)].

As a typical device configuration of these surface conduction electron-emitting devices, the aforementioned M.S. FIG. 15 shows a conventional Hartwell device configuration. In the figure, 31 is a substrate. 34
Is a conductive thin film, which is formed of a metal oxide thin film or the like formed by sputtering in an H-shaped pattern, and the electron emission portion 35 is formed by an energization process called energization forming described later. The distance L between device electrodes in the figure is 0.5 to 1 mm,
W 'is set at 0.1 mm. Electron emission unit 35
Since the position and shape of are not constant, they are shown as schematic diagrams.

Heretofore, in these surface conduction electron-emitting devices, it has been general to form an electron-emitting portion 35 by applying a current to the conductive thin film 34 before the electron-emitting process, which is called an energization forming. That is, the energization forming is to apply a DC voltage or a very slowly increasing voltage, for example, about 1 V / min, to both ends of the conductive thin film 34 and to energize the conductive thin film 34 to locally destroy, deform or alter the conductive thin film, and electrically. This is to form the electron-emitting portion 35 in a high-resistance state. In the electron emitting section 35, a crack is generated in a part of the conductive thin film 34, and electrons are emitted from the vicinity of the crack. The surface conduction electron-emitting device that has been subjected to the energization forming process applies a voltage to the conductive thin film 34,
The electron is emitted from the above-mentioned electron emitting portion 35 by passing a current through the element.

The above-mentioned surface conduction electron-emitting device has an advantage that a large number of devices can be arrayed and formed over a large area because of its simple structure and easy manufacture. Therefore, various applications that can take advantage of this feature are being studied. For example, a display device such as a charged beam source and an image display may be used.

[0013]

When the spacer is arranged in the image display device as described above, the spacer having a width of about several hundred μm is provided in the front plate and the back plate at a position where the spacer does not interfere with the phosphor screen and the electron source. Spacers need to be arranged with high precision,
For that purpose, the frit for fixing the spacer must be as thin as the width of the spacer, and the positional accuracy needs to be applied to the joint surface on the front plate and the rear plate with high precision. In order for the frit to fix the spacer with sufficient mechanical strength, the frit thickness is preferably several tens to several hundreds μm.

[0014] However, the frit coating using the conventional frit glass and dispenser frit coating apparatus has the following problems. (1) In a conventional commercially available frit glass, when a fine nozzle having a relatively coarse filler particle diameter of 150 to 250 mesh and an inner diameter of 150 to 250 μm is used to apply a fine wire, the diameter of the nozzle is small. It is impossible to perform a stable frit coating with a width of 300 μm or less because of severe clogging. (2) Since the gap distance between the tip of the nozzle and the surface to be coated and its stability are strongly affected in reducing the width of the frit coating width, the gap due to the undulation and warpage of the surface to be coated in frit coating over a wide range. Control is required. (3) Since the frit thickness becomes thinner as the width of the frit application becomes thinner, a desired frit thickness cannot be obtained by one-layer coating.

[0015]

SUMMARY OF THE INVENTION The present invention has been accomplished as a result of intensive studies to solve the above-mentioned problems in the conventional image display device using frit glass, and has been provided by the present invention. The image display device to be used is as follows. That is, the present invention provides: (1) a back plate on which an electron-emitting device is mounted, and an image forming member which is arranged to face the back plate and on which an image is formed by irradiation of an electron beam emitted from the electron-emitting device. A mounted front plate, a support frame between the rear plate and the front plate, surrounding the peripheral edges of the rear plate and the front plate, and a spacer holding the rear plate and the front plate against atmospheric pressure. In a sealed image display device, P
A mixed powder composed of amorphous frit glass powder mainly composed of bO and B ₂ O ₃ and a filler composed of SnO ₂ and PbO.TiO ₂ is made into fine particles having a maximum particle diameter of 350 mesh or less. The first paste containing the refined fritted glass and the vehicle was used, and the inner diameter of the nozzle was 150 μm.
By applying a dispenser having a dispenser in a range of m to 600 μm, the spacer and the front plate are coated by applying the first paste applied to the fixing portion of the front plate with the spacer, and firing the applied first paste. Fixed, Pb
A mixed powder composed of a crystalline frit glass powder containing O, B ₂ O ₃ and ZnO as main components and a filler containing ZrO ₂ · SiO ₂ as a material was refined to a maximum particle size of 325 mesh or less. Using a second paste containing fine-grained frit glass and a vehicle, the inner diameter of the nozzle is applied to a fixing portion of the back plate with the spacer by a discharge device having a dispenser having a range of 150 μm to 600 μm,
The image display device, wherein the spacer and the back plate are fixed by baking the applied second paste. (2) The image display device as described in (1) above, wherein the first and second pastes have an average particle size of 3.5 μm. (3) The electron-emitting device includes a plurality of surface conduction electron-emitting devices, each of the plurality of surface conduction electron-emitting devices is connected to an X-direction wiring and a Y-direction wiring, and the spacer and the back plate The image display device according to the above (1) or (2), wherein the fixation is performed by applying the second paste on the X-directional wiring and baking the second paste.

[0016]

Next, a preferred embodiment of the present invention will be described.

First, a preferred embodiment of the refined frit glass will be described. The material of frit glass powder is PbO
And a non-crystalline material containing B ₂ O ₃ as a main component and Pb
A crystalline material containing O, B ₂ O ₃ and ZnO as main components and obtained through a 325-mesh and 350-mesh sieve is used, and the sealing temperature is in a range of 400 to 550 ° C. desirable.

[0018] By using those in the material of the grain refining filler small thermal expansion coefficient, thermal expansion coefficient of the case of the mixed powder can be prevented from increasing, particularly SnO _2,
It is effective to use a PbO · TiO ₂ and ZrO ₂ · SiO _2. The filler powder used is one obtained by passing through a sieve of 325 mesh and 350 mesh, and preferably has a narrow particle size distribution of about several μm.

The finely divided frit glass obtained by mixing the above frit glass powder and filler is mixed with a vehicle in which a binder is dissolved in a solvent, and the viscosity is adjusted appropriately to improve the workability during coating. Used in the form.
Generally, an acrylic synthetic resin or the like is used for the binder, and an organic solvent such as alcohol or ether is used for the solvent. The mixed solution is used through a filter to remove the undissolved binder before use.

The application of the paste-like frit glass thus obtained is mainly performed by a dispenser which discharges the frit paste with a needle by relatively three-dimensionally positioning the position of the discharge portion and the member to be coated. Use a dispenser robot combined with a robot that moves and controls the robot.

The application width and application height, which are the application shapes of the frit, can be adjusted by the nozzle shape, the gap distance from the application surface of the nozzle, the discharge pressure of the paste, and the nozzle feed speed, in addition to the viscosity of the paste.

Nozzle shape dimensions: inner diameter φ150-600μ
m, and especially those having a diameter of about 200 μm are preferable from the viewpoint of thinning and coating stability.

The gap distance between the nozzle and the application surface is 50 to
The gap distance is set to be 1000 μm, and usually, the gap distance is reduced as the line width of the coating width is reduced. In particular, when performing stable thinning coating over a wide range, it is necessary to perform feedback control using a contact type and a non-contact type sensor because the gap distance needs to be stable. The discharge pressure of the paste is set in the range of 0.5 to ⁵ kgf / cm ² ,
Usually, the application width and the discharge pressure are used in a proportional relationship.
The nozzle shape, the gap distance, the discharge pressure, and the nozzle feed speed are correlated with each other, and are used after being optimized according to a desired coating shape.

The frit glass paste after application is used to decompose and bake the organic binder in the paste to make the frit glass paste 320-38.
After calcination at 0 ° C., calcination is performed at a sealing temperature to obtain a baked frit glass body to obtain a fixed medium such as a spacer.

Second, a preferred embodiment of an image display device using a fine-grained frit will be described.

First, the electron source used in the present invention will be described. The cold-cathode electron source used in the present invention has a simple configuration, and is preferably a surface conduction electron-emitting device that can be easily manufactured.

There are basically two types of surface conduction electron-emitting devices that can be used in the present invention, a planar surface conduction electron-emitting device and a vertical surface conduction electron-emitting device.

FIG. 1 is a schematic plan view and a sectional view showing the structure of a basic surface conduction electron-emitting device. In FIG. 1, 1 is a substrate, 2 and 3 are device electrodes, 4 is a conductive thin film, and 5 is an electron emitting portion. As the substrate 1, quartz glass, glass having a low content of impurities such as Na, blue plate glass, SiO ₂
A glass substrate formed on the surface and a ceramic substrate such as alumina are used.

As a material for the device electrodes 2 and 3, a general conductor is used. For example, Ni, Cr, Au, Mo, W, P
metals or alloys such as t, Ti, Al, Cu, Pd and P
a printed conductor composed of a metal such as d, Ag, Au, RuO ₂ , Pd—Ag or a metal oxide and glass, In ₂ O
It is appropriately selected from a transparent conductor such as _3- SnO ₂ and a semiconductor material such as polysilicon.

The element electrode interval L is preferably from several hundred angstroms to several hundred micrometers. It is desirable that the voltage applied between the device electrodes is low, and it is required that the device be produced with good reproducibility. Therefore, the preferable device electrode interval is several micrometers to several tens of micrometers.

The element electrode length W is from several micrometers to several hundred micrometers from the electrode resistance value and the electron emission characteristics, and the film thickness d of the element electrodes 2 and 3 is preferably several micrometers to several hundred angstroms. .

In addition to the configuration shown in FIG. 1, a configuration in which the conductive thin film 4 and the electrodes of the device electrodes 2 and 3 are sequentially formed on the substrate 1 may be adopted.

The conductive thin film 4 is particularly preferably a fine particle film composed of fine particles in order to obtain good electron emission characteristics. The thickness of the fine film is step coverage to the device electrodes 2 and 3 and resistance between the device electrodes 2 and 3. It is set as appropriate depending on the value and the energizing forming conditions to be described later, but is preferably from several angstroms to several thousand angstroms, particularly preferably from 10 angstroms to 500 angstroms. The sheet resistance is 10 3 to 10 7 ohms / square.

The material constituting the conductive thin film 4 is Pd, P
t, Ru, Ag, Au, Ti, In, Cu, Cr, F
e, metal such as Zn, Sn, Ta, W, Pb, PdO, S
oxides such as nO ₂ , In ₂ O ₃ , PbO, Sb ₂ O ₃ ,
HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ , YB ₄ , G
borides such as dB ₄ , TiC, ZrC, HfC, TaC,
Carbides such as SiC and WC; nitrides such as TiN, ZrN and HfN; semiconductors such as Si and Ge; and carbon.

The fine particle film described here is a film in which a plurality of fine particles are gathered, and has a fine structure not only in a state in which the fine particles are individually dispersed and arranged, but also in a state in which the fine particles are adjacent to each other or overlapped (island). The particle size of the fine particles is from several Angstroms to thousands of Angstroms, preferably from 10 Angstroms to 200 Angstroms.

The electron emitting portion 5 is a high-resistance crack formed in a part of the conductive thin film 4 and is formed by energization forming or the like. The crack may have conductive fine particles having a particle size of several Angstroms to several hundred Angstroms. The conductive fine particles contain at least some of the elements constituting the conductive thin film 4. Further, the electron emitting portion 5 and the conductive thin film 4 in the vicinity thereof may include carbon and a carbon compound.

FIG. 2 is a schematic diagram showing the structure of a basic vertical surface conduction electron-emitting device. In FIG. 2, FIG.
The same reference numerals are given to the same members. 21
Is a step forming portion. The substrate 1, the device electrodes 2 and 3, the conductive thin film 4, and the electron-emitting portion 5 can be made of the same material as that of the above-mentioned flat surface-conduction type electron-emitting device, and the step forming portion 21 is made of an insulating material. The film thickness of the step forming portion 21 corresponds to the device electrode interval L of the flat surface conduction electron-emitting device described above. The spacing is from tens of micrometers to hundreds of angstroms. The distance can be controlled by the manufacturing method of the step forming portion and the voltage applied between the device electrodes, but is preferably from several hundred angstroms to several micrometers.

The conductive thin film 4 is formed on the device electrodes 2 and 3 so as to be formed after the device electrodes 2 and 3 and the step forming portion 21 are formed. Note that in FIG.
Although it is shown in FIG. 1 as being formed in a straight line, the shape and position are not limited to this, depending on the forming conditions, energization forming conditions, and the like.

Hereinafter, a method of manufacturing the electron source substrate will be described with reference to FIGS. The same members as those in FIG. 1 are denoted by the same reference numerals.

1) After sufficiently washing the substrate with a detergent, pure water and an organic solvent, a device electrode material is deposited by a vacuum deposition method, a sputtering method or the like. Thereafter, device electrodes 2 and 3 are formed on the substrate by photolithography technology (FIG. 3).
(A)).

2) An organometallic solution is applied to the substrate 1 on which the device electrodes 2 and 3 are provided and left to form an organometallic thin film. The organometallic solution here is a solution of an organometallic compound containing the above-mentioned metal forming the conductive film 4 as a main element. Thereafter, the organic metal thin film is heated and baked, and is patterned by lift-off, etching, or the like to form a conductive thin film 4 (FIG. 3B). Here, the description has been given of the method of applying the organometallic solution, but the present invention is not limited to this, and the case where the organic metal solution is formed by a vacuum deposition method, a sputtering method, a chemical vapor deposition method, a dispersion coating method, a dipping method, a spinner method, or the like There is also.

3) Subsequently, an energization process called energization forming is performed. In the energization forming, an electric current is applied between the element electrodes 2 and 3 from a power source (not shown) to locally destroy, deform or alter the conductive thin film 4, thereby forming a portion having a changed structure. The site where the structure is locally changed is called an electron emission portion 5 (FIG. 3C). FIG. 4 shows an example of the voltage waveform of the energization forming.

The voltage waveform is particularly preferably a pulse waveform. When a voltage pulse having a constant pulse peak value is continuously applied (FIG. 4A), when a voltage pulse is applied while increasing the pulse peak value ( FIG. 4B). First, a case where the pulse crest value is a constant voltage (FIG. 4A) will be described.

In FIG. 4A, T1 and T2 are the pulse width and pulse interval of the voltage waveform, T1 is 1 microsecond to 10 milliseconds, T2 is 10 microseconds to 100 milliseconds, and the peak value of the triangular wave ( The peak voltage at the time of energization forming is appropriately selected according to the form of the surface conduction electron-emitting device, and is applied for several seconds to several tens of minutes under a vacuum atmosphere having an appropriate degree of vacuum, for example, about 10 −5 torr. . The waveform applied between the electrodes of the element is not limited to a triangular wave, and a desired waveform such as a rectangular wave may be used.

T1 and T2 in FIG.
As in (a), the peak value of the triangular wave (peak voltage at the time of energization forming) is increased in steps of, for example, about 0.1 V and applied under an appropriate vacuum atmosphere.

In this case, the energization forming process measures the element current at a voltage that does not locally destroy or deform the conductive thin film 4 during the pulse interval T2, for example, a voltage of about 0.1 V, and determines the resistance. A value is obtained, and for example, when a resistance of 1 M ohm or more is indicated, the energization forming is terminated.

4) Next, it is desirable to perform a process called an activation process on the element after the energization forming. The activation step is, for example, 10 −4 to 10 −5 tor.
This is a process of repeatedly applying a voltage pulse having a constant pulse peak value at a degree of vacuum of about r, similar to energization forming, and depositing carbon and carbon compounds resulting from organic substances existing in vacuum on a conductive thin film. This is a process for significantly changing the element current If and the emission current Ie. The activation process ends while measuring the device current If and the emission current Ie, for example, when the emission current Ie is saturated. Further, it is preferable that the applied voltage pulse be performed at an operation drive voltage.

Here, the carbon and the carbon compound are graphite (indicating both single and polycrystalline) and amorphous carbon (indicating a mixture of amorphous carbon and polycrystalline graphite), and have a film thickness of 500 Å or less. And more preferably 300 angstrom or less.

5) It is preferable that the electron-emitting device thus produced is operated and driven in an atmosphere having a higher degree of vacuum than that in the forming step and the activation step. Further, it is desirable to drive the device after heating to 80 ° C. to 150 ° C. in an atmosphere with a higher degree of vacuum.

The degree of vacuum higher than the degree of vacuum after the forming step and the activation treatment is, for example, a degree of vacuum of about 10 −6 or more, more preferably an ultrahigh vacuum system. This is a vacuum at which the compound hardly deposits on the conductive thin film. By doing so, the element current If,
The emission current Ie can be stabilized.

FIG. 5 is a schematic configuration diagram of a measurement and evaluation device for measuring the electron emission characteristics of the electron-emitting device manufactured by the above-described method. 5, the same reference numerals as those in FIG. 1 indicate the same components. Reference numeral 51 denotes a power supply for applying a device voltage Vf to the electron-emitting device; 50, an ammeter for measuring a device current If flowing through the conductive thin film 4 between the device electrodes 2 and 3;
Reference numeral 4 denotes an anode electrode for capturing an emission current Ie emitted from the electron emission portion of the device, 53 denotes a high voltage power supply for applying a voltage to the anode electrode 54, and 52 denotes emission emitted from the electron emission portion 5 of the device. An ammeter for measuring the current Ie, 55 is a vacuum device, and 56 is an exhaust pump. FIG.
Are the device voltage Vf, the device current If, and the emission current Ie.
FIG. 4 is a diagram showing an example of the relationship with the following. Next, the image forming apparatus of the present invention will be described. An electron source substrate used in an image forming apparatus is formed by arranging a plurality of surface conduction electron-emitting devices on a substrate.

In a method of arranging the surface conduction electron-emitting devices, the surface conduction electron-emitting devices are arranged in parallel, and both ends of each element are connected by wiring in a ladder arrangement (hereinafter referred to as a ladder arrangement electron source substrate). ) And a simple matrix arrangement in which an X-directional wiring and a Y-directional wiring are connected to a pair of device electrodes of a surface conduction electron-emitting device, respectively (hereinafter referred to as a matrix-type disposed electron source substrate). Note that an image forming apparatus having a ladder-type electron source substrate requires a control electrode (grid electrode) which is an electrode for controlling the flight of electrons from the electron-emitting devices.

The configuration of the electron source based on this principle will be described below with reference to FIG. Reference numeral 71 denotes an electron source substrate, 72 denotes an X-direction wiring, 73 denotes a Y-direction wiring, 74 denotes a surface conduction electron-emitting device, and 75 denotes a connection. Incidentally, the surface conduction electron-emitting device 74 may be either the above-mentioned flat type or vertical type.

In the figure, the substrate used as the electron source substrate 71 is the above-mentioned glass substrate or the like, and the shape is appropriately set according to the application. The m X-direction wirings 72 are DX1, DX
, DXm, and the Y-direction wiring 73 is DY1,
DY2,... DYn are composed of n wirings. The material, the film thickness, and the wiring width are appropriately set so that a substantially uniform voltage is supplied to a large number of surface conduction elements. These m X
The directional wiring 72 and the n Y-directional wirings 73 are electrically separated by an interlayer insulating layer (not shown) to form a matrix wiring. (M and n are both positive integers) The interlayer insulating layer (not shown) is the substrate 7 on which the X-directional wiring 72 is formed.
1 is formed in a desired region on the entire surface or a part thereof. The X-direction wiring 72 and the Y-direction wiring 73 are led out as external terminals.

Further, the device electrodes (not shown) of the surface conduction electron-emitting device 74 are electrically connected to the m X-directional wires 72 and the n Y-directional wires 73 by connection 75. The surface conduction electron-emitting device may be formed on either the substrate or the interlayer insulating layer (not shown). As will be described later in detail, a scanning signal generating means (not shown) for applying a scanning signal for scanning a row of the surface conduction electron-emitting devices 74 arranged in the X direction in accordance with an input signal is provided on the X-direction wiring 72. Is electrically connected to On the other hand, Y direction wiring 73 has Y
Each row of the rows of the surface conduction electron-emitting devices 74 arranged in the direction is electrically connected to a modulation signal generating means (not shown) for applying a modulation signal for modulating according to an input signal. Further, the drive voltage applied to each element of the surface conduction electron-emitting device is supplied as a difference voltage between the scanning signal and the modulation signal applied to the element. In the above configuration, individual elements can be selected and driven independently only by simple matrix wiring.

Next, an image forming apparatus using the electron sources of the simple matrix arrangement prepared as described above will be described with reference to FIGS. 8, 9 and 10. FIG. FIG. 8 is a basic configuration diagram of the image forming apparatus, FIG. 9 is a fluorescent film, and FIG.
FIG. 1 is a block diagram of a driving circuit for performing display in accordance with an SC television signal, and shows an image forming apparatus including the driving circuit.

In FIG. 8, reference numeral 71 denotes an electron source substrate on which electron-emitting devices are formed, 81 is a rear plate to which the electron source substrate 71 is fixed, 86 is a glass substrate 83 on which an inner surface of a fluorescent film 84 and a metal back 85 are provided. The formed face plate, 82 is a support frame, 81 is a rear plate, and these members constitute an envelope 88. In FIG. 8, 7
Reference numeral 4 corresponds to the electron-emitting portion in FIG. Reference numerals 72 and 73 denote an X-direction wiring and a Y-direction wiring connected to a pair of device electrodes of the surface conduction electron-emitting device.

The envelope 88 comprises the face plate 86, the support frame 82, and the rear plate 81 as described above.
Since the rear plate 81 is provided mainly for the purpose of reinforcing the strength of the electron source substrate 71, if the electron source substrate 71 itself has sufficient strength, the separate rear plate 81 is unnecessary, and The support frame 82 may be provided directly, and the envelope 88 may be constituted by the face plate 86, the support frame 82, and the electron source substrate 71.

In FIG. 9, reference numeral 92 denotes a phosphor. The phosphor 92 is composed of only the phosphor in the case of monochrome, but in the case of a color phosphor film, the phosphor 92 is composed of a black conductive material 91 called a black stripe or a black matrix depending on the arrangement of the phosphor. The purpose of providing the black stripes and the black matrix is to provide a color display in order to make the color mixing and the like inconspicuous by making the painted portions between the phosphors 92 of the necessary three primary color phosphors black, and to reduce external light in the phosphor film 84. The purpose is to suppress a decrease in contrast due to reflection. The material of the black stripe is not limited to the commonly used material containing graphite as a main component, as long as it is conductive and has little light transmission and reflection.

As a method of applying the phosphor on the glass substrate 93, a precipitation method or a printing method is used regardless of monochrome or color. A metal back 85 (FIG. 8) is provided on the inner surface side of the fluorescent film 84 (FIG. 8). The purpose of the metal back is to improve the luminance by reflecting the light toward the inner surface side of the light emitted from the fluorescent substance to the face plate 86 side in a specular manner.
It acts as an electrode for applying an electron beam acceleration voltage, and protects the phosphor from damage due to collision of negative ions generated in the envelope. The metal back can be produced by performing a smoothing process (usually called filming) on the inner surface of the phosphor film after producing the phosphor film, and then depositing Al by vacuum deposition or the like. The face plate 86 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 84 to further enhance the conductivity of the fluorescent film 84.

The envelope 88 passes through an exhaust pipe (not shown) and
^A degree of vacuum of about ^-7 torr is applied and sealing is performed. In some cases, getter processing is performed to maintain the degree of vacuum of the envelope 88 after sealing. This is done by heating a getter disposed at a predetermined position (not shown) in the envelope 88 by a heating method such as resistance heating or high-frequency heating immediately before or after the envelope 88 is sealed, and vapor deposition. This is a process for forming a film. The getter is usually composed mainly of Ba or the like, and for example, 1 × 10 ⁻⁵ torr to 1 × 1 due to the adsorption action of the deposited film.
The vacuum degree of 0 ^-7 torr is maintained. Steps after the forming of the surface conduction electron-emitting device are appropriately set.

Next, a schematic configuration of a driving circuit for performing a television display based on an NTSC television signal in an image forming apparatus constituted by using an electron source having a simple matrix arrangement type substrate is shown in a block diagram of FIG. This will be described with reference to FIG. 101 is the display panel, 102 is a scanning circuit, 103 is a control circuit, 104 is a shift register, 10
5 is a line memory, 106 is a synchronization signal separation circuit, 107
Is a modulation signal generator, and Vx and Va are DC voltage sources.

The function of each part will be described below. First, the display panel 101 is connected to the terminals Dox1 to Doxm and the terminal Dx.
It is connected to an external electric circuit via oy1 to Doyn and the high voltage terminal Hv. Of these terminals, the terminals Dox1 to Doxm sequentially drive electron sources provided in the display panel, that is, a group of surface conduction electron-emitting devices arranged in a matrix of M rows and N columns, one row at a time (N elements). A scanning signal for moving is applied.

On the other hand, to the terminals Dy1 to Dyn, a modulation signal for controlling the output electron beam of each element of one row of surface conduction electron-emitting devices selected by the scanning signal is applied. In addition, a DC voltage source Va is applied to the high voltage terminal Hv.
For example, a DC voltage of 10 K [V] is supplied, which is an accelerating voltage for applying sufficient energy to the electron beam output from the surface conduction electron-emitting device to excite the phosphor.

Next, the scanning circuit 102 will be described. This circuit has M switching elements inside (in the figure, S1 to Sm are schematically shown), and each switching element is provided with an output voltage of a DC voltage source Vx or 0V.
[V] (ground level) is selected and electrically connected to the terminals Dx1 to Dxm of the display panel 101. Each of the switching elements S1 to Sm operates based on the control signal Tscan output from the control circuit 103, but can actually be configured by combining switching elements such as FETs, for example.

The DC voltage source Vx determines that the driving voltage applied to an unscanned device is equal to or lower than the electron emission threshold voltage based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting device. It is set to output such a constant voltage.

The control circuit 103 has a function of matching the operations of the respective units so that an appropriate display is performed based on an externally input image signal. A synchronization signal Tsyn sent from a synchronization signal separation circuit 106 described below.
Based on c, each control signal of Tscan, Tsft and Tmry is generated.

The synchronizing signal separating circuit 106 is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC television signal input from the outside, and can be formed by using a frequency separating (filter) circuit. As is well known, the synchronization signal separated by the synchronization signal separation circuit 106 includes a vertical synchronization signal and a horizontal synchronization signal, but is illustrated here as a Tsync signal for convenience of explanation. on the other hand,
The luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience.
4 is input.

The shift register 104 is for serially / parallel-converting the DATA signal input serially in time series for each line of an image, and operates based on a control signal Tsft sent from the control circuit 103. . (That is, the control signal Tsft is
04 shift clock. The data for one line of the serial / parallel-converted image (corresponding to drive data for N electron-emitting devices) is Id
The shift register 104 outputs N parallel signals of 1 to Idn.

The line memory 105 is a storage device for storing data for one line of an image for a required time only.
The contents of Id1 to Idn are stored as appropriate according to the control signal Tmry sent from the control circuit 103. The stored contents are output as Id1 to Idn and input to modulation signal generator 107.

The modulation signal generator 107 outputs the image data I
A signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices according to each of d1 to Idn. The output signal is applied to the surface conduction electron-emitting devices in the display panel 101 through terminals Doy1 to Doyn. Is done.

As described above, the electron-emitting device according to the present invention has the following basic characteristics with respect to the emission current Ie. That is, as described above, electron emission has a clear threshold voltage Vth, and electron emission occurs only when a voltage higher than Vth is applied. For a voltage equal to or higher than the electron emission threshold, the emission current also changes in accordance with the change in the voltage applied to the device. Note that the value of the electron emission threshold voltage Vth and the degree of change of the emission current with respect to the applied voltage may be changed by changing the material, configuration, and manufacturing method of the electron emission element. I can say that.

That is, when a pulse-like voltage is applied to the device, for example, when a voltage lower than the electron emission threshold is applied, electron emission does not occur, but when a voltage higher than the electron emission threshold is applied, the electron beam is emitted. Is output. At that time, first, the intensity of the output electron beam can be controlled by changing the peak value Vm of the pulse. Second, it is possible to control the total amount of charges of the output electron beam by changing the pulse width Pw. Therefore, as a method of modulating the electron-emitting device in accordance with the input signal, there are a voltage modulation method, a pulse width modulation method, and the like.
A voltage modulation circuit that generates a voltage pulse of a certain length but modulates the peak value of the pulse appropriately according to input data is used.

In order to implement the pulse width modulation method, the modulation signal generator 107 generates a voltage pulse having a constant peak value, but modulates the width of the voltage pulse appropriately according to input data. A circuit of a width modulation system is used.

By the series of operations described above, the image display device of the present invention can display a television using the display panel 101. Although not particularly described in the above description, the shift register 104 and the line memory 105 may be of a digital signal type or an analog signal type. In short, serial / parallel conversion and storage of image signals can be performed at a predetermined speed. It should be done.

When the digital signal type is used, it is necessary to convert the output signal DATA of the synchronizing signal separation circuit 106 into a digital signal. This can be achieved by providing an A / D converter at the output section of the circuit 106. In connection with this, the circuit used for the modulation signal generator 107 differs slightly depending on whether the output signal of the line memory 105 is a digital signal or an analog signal.

First, the case of a digital signal will be described.
In the voltage modulation method, for example, a well-known D / A conversion circuit may be used as the modulation signal generator 107, and an amplification circuit or the like may be added as necessary. In the case of the pulse width modulation method, the modulation signal generator 107 includes, for example, a high-speed oscillator, a counter for counting the number of waves output from the oscillator, and a comparator for comparing the output value of the counter with the output value of the memory. It can be configured by using a circuit in which a (comparator) is combined. If necessary, an amplifier for amplifying the voltage of the pulse width modulated signal output from the comparator to the drive voltage of the surface conduction electron-emitting device may be added.

Next, the case of an analog signal will be described.
In the voltage modulation method, for example, an amplification circuit using a well-known operational amplifier or the like may be used as the modulation signal generator 107, and a level shift circuit or the like may be added as necessary. In the case of the pulse width modulation method, for example, a well-known voltage controlled oscillator (VCO) may be used. If necessary, an amplifier for amplifying the voltage up to the drive voltage of the surface conduction electron-emitting device may be added. Is also good.

In the image display device completed as described above, each of the electron-emitting devices is provided with external terminals Dox1 to Dox1 to D4.
oxm, Doy1 to Doyn to apply a voltage to emit electrons, apply a high voltage to a metal back 85 or a transparent electrode (not shown) through a high voltage terminal Hv, accelerate an electron beam, and Collide,
An image can be displayed by exciting and emitting light.

The configuration described above is a schematic configuration necessary for manufacturing a suitable image forming apparatus used for display and the like. For example, detailed portions such as materials of each member are not limited to those described above. Is appropriately selected so as to be suitable for the use of the image forming apparatus. Also, the NTSC system has been described as an example of the input signal, but the present invention is not limited to this, and PAL, SECA
Various systems such as the M system may be used, and a TV signal composed of a larger number of scanning lines (for example, a high-definition TV including the MUSE system) may be used.

Next, the above-mentioned ladder-type arrangement electron source substrate and an image display device using the same will be described with reference to FIGS. In FIG. 11, reference numeral 110 denotes an electron source substrate, 1
Reference numeral 11 denotes an electron-emitting device; and 112, Dx1 to Dx10 denote common wirings connected to the electron-emitting device. A plurality of electron-emitting devices 111 are arranged on the substrate 110 in parallel in the X direction. (This is called an element row). A plurality of such element rows are arranged on a substrate to form a ladder-type electron source substrate. By appropriately applying a drive voltage between the common wires of each element row, each element row can be driven independently. That is, a voltage equal to or higher than the electron emission threshold may be applied to an element row that emits an electron beam, and a voltage equal to or lower than the electron emission threshold may be applied to an element row that does not emit an electron beam. Further, the common wirings Dx2 to Dx9 between the element rows, for example, Dx2 and Dx3 may be the same wiring.

FIG. 12 is a view showing the structure of an image forming apparatus having a ladder-type arrangement of electron sources. 120 is a grid electrode, 121 is a hole through which electrons pass, 122
Is a terminal outside the container made of Dox1, Dox2... Doxm, 123 is G1 connected to the grid electrode 120,
Gn,..., Gn, an external terminal 110 is an electron source substrate in which the common wiring between the element rows is the same as described above. 8 and 11 indicate the same members. The difference from the image forming apparatus having the simple matrix arrangement (FIG. 8) is that a grid electrode 120 is provided between the electron source substrate 110 and the face plate 86.

A grid electrode 120 is provided between the substrate 110 and the face plate 86. The grid electrode 120 can modulate the electron beam emitted from the surface conduction electron-emitting device.In order to allow the electron beam to pass through a stripe-shaped electrode provided orthogonally to the ladder-shaped element row, One circular opening 121 is provided for each element. The shape and installation position of the grid do not necessarily have to be as shown in FIG.
A large number of passage openings may be formed in a mesh shape as openings, and may be provided, for example, around or near the surface conduction electron-emitting device.

The external terminal 122 and the grid external terminal 123 are electrically connected to a control circuit (not shown).

In this image forming apparatus, the modulation signals for one line of an image are simultaneously applied to the grid electrode rows in synchronization with the sequential driving (scanning) of the element rows one by one.
By controlling the irradiation of each electron beam to the phosphor, an image can be displayed line by line.

Further, according to the present invention, it is possible to provide an image forming apparatus suitable not only for a display device for television broadcasting but also for a display device such as a video conference system and a computer. Further, it can be used as an image forming apparatus as an optical printer including a photosensitive drum or the like.
In addition, the present invention can be applied not only to a surface conduction type electron-emitting device but also to a cold cathode electron source such as a MIM type electron-emitting device and a field emission type electron-emitting device as an electron-emitting device. Can also be applied.

[0087]

EXAMPLES The present invention will be described in more detail with reference to the following Examples, but it should not be construed that the invention is limited thereto.

Example 1 In Example 1, the fine particles of the present invention using crystalline frit glass powder having a particle size of 325 mesh pass and filler having the same particle size of 325 mesh pass were used. An example of a method of applying frit glass is shown below. For the frit glass, frit glass powder and filler having the same components as LS-7105, which is a commercially available crystalline frit glass manufactured by Nippon Electric Glass Co., Ltd., are further finely divided and separated by a 325 mesh sieve. A mixture obtained by mixing at a ratio of 70:30 and having an average particle size of 3.5 μm was used. The frit glass was mixed with a vehicle in which a binder of an acrylic resin was dissolved in a solvent of terpineol to obtain a frit glass paste in consideration of workability at the time of application. This frit paste was applied on a blue plate glass (soda lime glass) using a dispenser frit coating device. At this time, the nozzle of the dispenser has an inner diameter of φ20.
0 μm, and the paste discharge pressure is 1.0 kgf
/ Cm ² , the gap distance was 70 μm, and the nozzle feed speed was 12 mm / s. After the application, the coating was dried at 120 ° C., temporarily fired in an electric furnace at a maximum temperature of 350 to 380 ° C., and subsequently fired at a maximum temperature of 400 to 450 ° C. The preliminary firing was performed for decomposing and firing the organic binder in the frit paste. The frit glass fired body thus manufactured has a frit width of 250 to 270.
μm, the frit height was 30 to 50 μm, and the bonding strength to blue plate glass (soda lime glass) was sufficient.

Example 2 In Example 2, a non-crystalline frit glass powder having a particle size of 350 mesh pass and a filler having the same particle size of 350 mesh pass were used. One example of an application method of the grained frit glass will be described.
Nippon Electric Glass Co., Ltd. is commercially available for frit glass
A frit glass powder and a filler having the same components as LS-3081, which is an amorphous frit glass manufactured by Aztec Co., Ltd., are further refined, separated by a sieve of 350 mesh, mixed at a weight ratio of 90:10, and mixed with an average particle size of 3 What was set to 0.5 micrometer was used. The frit glass was mixed with a vehicle in which a binder of an acrylic resin was dissolved in a solvent of terpineol to obtain a frit glass paste in the same manner as in Example 1 in consideration of workability at the time of application. This frit paste was applied on a blue plate glass (soda lime glass) to a width of 300 μm.
m was applied to the silver wiring using a dispenser frit coating device. At this time, the nozzle of the dispenser has an inner diameter of φ20.
0 μm and the paste discharge pressure is 0.5 kgf
/ Cm ² and the gap distance was 50 μm. 12 after application
After drying at 0 ° C., the same location was again applied again using the nozzle at a paste discharge pressure of 1.0 kgf / cm ² and a gap distance of 200 μm. The nozzle feed speed was 12 mm / s for both coatings. After drying at 120 ° C. after the application, as in Example 1, calcination was performed at a maximum temperature of 350 to 380 ° C. in an electric furnace, and then calcination was performed at a maximum temperature of 400 to 450 ° C. The frit glass fired body produced in this manner has a frit width 2
The frit height was 50 to 270 μm and the frit height was 100 to 130 μm, and the bonding strength with silver wiring on blue sheet glass (soda lime glass) was also sufficient.

Embodiment 3 Embodiment 3 is an example in which the method for applying fine-grained frit glass of the present invention is applied to an image display device having the above-mentioned matrix type electron source. FIG. 13 is a partially cutaway perspective view of the image display device of the present embodiment, and FIG. 14 is a cross-sectional view (a part of a cross section AA ′) of the main part of the image display device shown in FIG. FIG. 13 is basically the same as FIG. 8, except that there is no rear plate 81 for reinforcing the above-mentioned electron source substrate 71 and that a spacer 89 is provided. The same reference numerals are given to the common parts of the structure. FIG.
In 3 and 14, 89 is a spacer made by polishing a soda lime glass to a thickness of several hundred μm, 80 and 90 are frit glass, 71 is a soda lime glass material, and an electron source substrate is provided with X direction wiring 72 and the like, 86 Is a face plate composed of a blue glass substrate 83, a phosphor 84, and a metal back 85, and 82 is a support frame.

For fixing the spacer 89, different frit glasses were used for the reason of the image display device manufacturing process. That is, the crystalline frit glass shown in the first embodiment is used for fixing the metal back 85 and the spacer 89 of the face plate 86, and the second embodiment is used for fixing the X-directional wiring 72 and the spacer 89 on the electron source substrate 71. The amorphous frit glass shown in FIG. 2 was used. Hereinafter, a method of applying each frit glass will be specifically described.

In the frit glass 90, the frit glass containing a filler of 325 mesh pass shown in Example 1 was mixed with a vehicle in which a binder of an acrylic resin was dissolved in a solvent of terpineol as in Example 1, and the frit was mixed. As a glass paste, drying was performed at 120 ° C. to a desired position on the face plate 86 using a dispenser frit coating device, and coating was performed twice. Use a nozzle with a diameter of 200 μm and a coating condition of 1
The first layer has a paste discharge pressure of 1 kgf / cm ² , a gap distance of 70 μm, and the second layer has a paste discharge pressure of 2 kF.
gf / cm ² , the gap distance was 200 μm, and the nozzle feed speed was 12 mm / s for both coatings.

In the frit glass 80, the non-crystalline frit glass containing the filler of 350 mesh pass shown in the second embodiment is made into a paste like the above, and the frit glass 80 is placed on the electron source substrate 71 by using a dispenser frit coating device.
The wire 72 having a width of 0 μm was dried at 120 ° C., and was applied twice. The inner diameter of the nozzle is 200 μm, and the application condition is the first layer, and the paste discharge pressure is 0.5 kgf.
/ Cm ² , gap distance 50 μm, in the second layer,
Paste discharge pressure 1kgf / cm ² , gap distance 20
0 μm, and the nozzle feed speed was 12 mm /
s.

In applying the frit glasses 90 and 80, the waviness of the application portion on the face plate 86 and the wiring 72, which is the application surface, is measured by a contact-type sensor in advance in order to stably maintain the gap distance, and is fed back to the application device. And a mechanism for precisely controlling the application was applied. The frit glass coated in this way is preliminarily fired at a maximum temperature of 320 to 380 ° C.
It was fired at 450 ° C. to obtain a fired body. As a result, the frit glass 80 and 90 have a frit width of 250 to 2
A frit glass fired body having a size of 70 μm and a frit height of 100 to 130 μm was obtained, and a material having sufficient bonding strength with the spacer was obtained.

[0095]

As described above, the following effects can be obtained by the present invention. (1) The refined frit glass and an inner diameter of 150 to 600
200 μm by using a combination of precision nozzles
The frit coating with a width of μ1000 μm became possible, and the height of the frit could be adjusted in the range of 30-1000 μm by performing the overcoating. (2) By providing a mechanism for precisely controlling the relative position of the dispenser and the member to be coated three-dimensionally, stable frit coating over a wide range has become possible. (3) According to the above (1) and (2), when the method of the present invention is applied to an image display device, a thin film having a width of about several hundred μm is provided in the front plate and the rear plate so as not to interfere with the fluorescent screen and the electron source. Fine frit coating for arranging the spacers with high precision has become possible, and sufficient mechanical strength at the spacer fixing portion can be obtained by re-coating.

[Brief description of the drawings]

FIG. 1 is a schematic plan view (a) and a sectional view (b) showing the configuration of a basic surface conduction electron-emitting device of an image display device to which the method of the present invention can be applied.

FIG. 2 is a schematic view showing the configuration of a basic vertical surface conduction electron-emitting device of an image display device to which the method of the present invention can be applied.

FIG. 3 is a diagram illustrating an example of a method for manufacturing a surface conduction electron-emitting device.

FIG. 4 is a diagram illustrating an example of a voltage waveform of energization forming;

FIG. 5 is a schematic configuration diagram of a measurement evaluation device for measuring electron emission characteristics.

FIG. 6 is a line graph showing one example of electron emission characteristics.

FIG. 7 is a schematic explanatory view showing an electron source having a simple matrix arrangement.

FIG. 8 is a schematic explanatory view illustrating a schematic configuration of an image forming apparatus.

FIG. 9 is a schematic plan view showing a configuration of a fluorescent film.

FIG. 10 is a block diagram illustrating a schematic configuration of a drive circuit for performing display according to an NTSC television signal, and a diagram illustrating an image display device including the circuit.

FIG. 11 is a schematic plan view showing an electron source in a ladder arrangement.

FIG. 12 is a schematic perspective view illustrating a schematic configuration of an image forming apparatus.

FIG. 13 is a partially cutaway perspective view showing a configuration of an image display device to which the method of the present invention is applied.

FIG. 14 is a schematic sectional view showing a part of the image display device (FIG. 13) to which the method of the present invention is applied.

FIG. 15 is a schematic plan view showing a configuration of a conventional surface conduction electron-emitting device.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 (electron source) substrate 2 element electrode 3 element electrode 4 conductive thin film 5 electron emission section 21 step forming section 50 ammeter for measuring element current If 51 power supply 52 for applying element voltage to electron emission element 52 emission Ammeter 53 for measuring current Ie 53 High-voltage power supply for applying a voltage to the anode electrode 54 Anode electrode for capturing emission current Ie 55 Vacuum device 56 Exhaust pump 71 Electron source substrate 72 X-direction wiring 73 Y-direction wiring 74 surface conduction electron-emitting device 75 connection 80 frit glass 81 rear plate 82 support frame 83 glass substrate 84 fluorescent film (body) 85 metal back 86 face plate 87 high voltage terminal 88 envelope 89 spacer 90 frit glass 91 black conductive material 92 Phosphor 101 Display panel 102 Scanning circuit 103 Control circuit 1 Reference Signs List 4 shift register 105 line memory 106 synchronization signal separation circuit 107 modulation signal generator, Vx and Va: DC voltage source 110 electron source substrate 111 electron emission element 112 (Dx1 to Dx10) common wiring 120 grid electrode 121 air hole 122 Dox1, Dox2 ... External container terminal composed of Doxm 123 G1, G2, ... External container terminal composed of Gn

──────────────────────────────────────────────────続 き Continuation of the front page (51) Int.Cl. ⁷ Identification code FI G09F 9/30 320 G09F 9/30 320 (56) References JP-A-2-22938 (JP, A) JP-A-4-357132 (JP, A) JP-A-3-4427 (JP, A) JP-A-63-32827 (JP, A) JP-A-7-315867 (JP, A) JP-A-59-178476 (JP, A) Kaihei 7-140907 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) C03C 8/24 C03C 8/10 C03C 8/16 C03C 17/04 C03C 17/36 G09F 9/30 320

Claims (3)

(57) [Claims] 1. A back plate on which an electron-emitting device is mounted, and an image forming member which is arranged to face the back plate and forms an image by irradiation of an electron beam emitted from the electron-emitting device. A front plate, a support frame between the rear plate and the front plate, surrounding a periphery of the rear plate and the front plate, and a spacer holding the rear plate and the front plate at atmospheric pressure are sealed. An image display device comprising: a mixed powder composed of a non-crystalline frit glass powder containing PbO and B ₂ O ₃ as main components and a filler containing SnO ₂ and PbO · TiO ₂ as a material; Using a first paste containing finely grained frit glass and a vehicle that has been refined to a size of 350 mesh or less, and the inner diameter of the nozzle is 150
By applying a dispenser having a dispenser in a range of μm to 600 μm, the spacer and the front plate are coated by applying the first paste applied to a fixing portion of the front plate with the spacer, and firing the applied first paste. A fixed powder mixture comprising a crystalline frit glass powder containing PbO, B ₂ O ₃ , and ZnO as main components and a filler containing ZrO ₂ · SiO ₂ as a material is finely divided to a maximum particle size of 325 mesh or less. Using a second paste containing finely grained frit glass and a vehicle, the inner diameter of the nozzle being 150 μm
The spacer and the back plate are fixed by applying the applied paste to the fixing portion of the back plate with the spacer by using a discharge device having a dispenser having a range of m to 600 μm, and baking the applied second paste. An image display device, comprising: 2. The image display device according to claim 1, wherein the average grain size of the fine-grained frit glass of the first and second pastes is 3.5 μm. 3. The electron-emitting device comprises a plurality of surface-conduction electron-emitting devices, each of the plurality of surface-conduction electron-emitting devices being connected to an X-direction wiring and a Y-direction wiring, and 3. The image display device according to claim 1, wherein the fixing to the back plate is performed by applying and firing the second paste on the X-direction wiring. 4.