JP3175336B2 - Hybrid IC lead forming method - Google Patents
Hybrid IC lead forming methodInfo
- Publication number
- JP3175336B2 JP3175336B2 JP25718792A JP25718792A JP3175336B2 JP 3175336 B2 JP3175336 B2 JP 3175336B2 JP 25718792 A JP25718792 A JP 25718792A JP 25718792 A JP25718792 A JP 25718792A JP 3175336 B2 JP3175336 B2 JP 3175336B2
- Authority
- JP
- Japan
- Prior art keywords
- base material
- substrate
- forming
- individual substrate
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0097—Processing two or more printed circuits simultaneously, e.g. made from a common substrate, or temporarily stacked circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/403—Edge contacts; Windows or holes in the substrate having plural connections on the walls thereof
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Structure Of Printed Boards (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、ハイブリッドICのリ
ード形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming leads of a hybrid IC.
【0002】[0002]
【従来の技術】従来のハイブリッドICの製造工程では
以下のようにしてリード形成が行われていた。まず、図
9に示すような集合基板50の状態で、長孔51によっ
て区画形成された各個片基板52上に半導体素子やその
他の個別部品を搭載する。部品搭載が終了したら基板の
吊り部分53を金型によって打ち落とし、一枚の集合基
板50を複数枚の個片基板52に分割する。2. Description of the Related Art In a conventional hybrid IC manufacturing process, leads are formed as follows. First, in the state of the collective substrate 50 as shown in FIG. 9, semiconductor elements and other individual components are mounted on each individual substrate 52 defined by the long holes 51. When the component mounting is completed, the hanging portion 53 of the board is shot down by a mold, and one collective board 50 is divided into a plurality of individual boards 52.
【0003】こうして分割された個片基板52に対し、
別工程で製造されたリードフレーム(F型リード)54
を図10に示すように個片基板52の両側から対向させ
て配置する。続いて、図11に示すように個片基板52
の両側からリードフレーム54を組み込んで、さらに個
片基板52とリードフレーム54とをハンダ付けによっ
て接続させる。その後、図中破線で示すように所定の長
さを残してリードフレーム54を切断し、あとは必要に
応じて所定形状にフォーミングする。[0003] With respect to the individual substrate 52 thus divided,
Lead frame (F-type lead) 54 manufactured in another process
Are arranged facing each other from both sides of the individual substrate 52 as shown in FIG. Subsequently, as shown in FIG.
Then, the lead frame 54 is assembled from both sides, and the individual substrate 52 and the lead frame 54 are further connected by soldering. Thereafter, the lead frame 54 is cut leaving a predetermined length as indicated by a broken line in the figure, and then formed into a predetermined shape as necessary.
【0004】[0004]
【発明が解決しようとする課題】しかしながら上記従来
のリード形成方法においては、個片基板52とリードフ
レーム54とがそれぞれ別々の工程で製造され、さらに
この両者を後工程で組み合わせるようになっているた
め、製造工程が非常に煩雑になるといった問題があっ
た。また、個片基板52とリードフレーム54とをハン
ダ付けにより接続し、これによって両者の電気的接続が
得られるようになっているため、作業に人手がかかるう
えに多大な工数を必要し、大幅な製品コストの増加を招
いていた。However, in the above-described conventional lead forming method, the individual substrate 52 and the lead frame 54 are manufactured in separate steps, respectively, and both are combined in a later step. Therefore, there is a problem that the manufacturing process becomes very complicated. In addition, since the individual substrate 52 and the lead frame 54 are connected by soldering so that an electrical connection between them can be obtained, the work is labor-intensive and requires a great deal of man-hour. Product cost has increased.
【0005】本発明は、上記問題を解決するためになさ
れたもので、一連の製造工程の中でリードを形成するこ
とができ、しかも大幅な工数削減を可能としたハイブリ
ッドICのリード形成方法を提供することを目的とす
る。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and a method for forming a lead of a hybrid IC which can form a lead in a series of manufacturing steps and which can greatly reduce the number of steps. The purpose is to provide.
【0006】[0006]
【課題を解決するための手段】本発明は、上記目的を達
成するためになされたもので、基材を長孔にて区画し、
その基材内に個片基板を形成する工程と、基材の表面に
銅箔を積層する工程と、銅箔の所定部分にレジストを塗
布する工程と、レジストが塗布された部分を除いて銅箔
を除去し、基材に設けた長孔を跨ぐ状態で銅箔を残す工
程と、基材から個片基板を切り離すと同時に、残された
銅箔を切断、曲げ加工して個片基板の周囲にリードを形
成する工程とからなるハイブリッドICのリード形成方
法である。Means for Solving the Problems The present invention has been made to achieve the above-mentioned object, and has a structure in which a substrate is partitioned by long holes,
A step of forming an individual substrate in the base material, a step of laminating a copper foil on the surface of the base material, a step of applying a resist to a predetermined portion of the copper foil, and a step of forming a copper except for the portion where the resist is applied. The step of removing the foil and leaving the copper foil in a state of straddling the long hole provided in the base material, separating the individual substrate from the base material, and simultaneously cutting and bending the remaining copper foil to form the individual substrate And forming a lead around the lead.
【0007】また、基材を長孔にて区画し、その基材内
に個片基板を形成する工程と、基材に設けた長孔を跨ぐ
状態で該基板面に沿って平板状の銅板を実装する工程
と、基材から個片基板を切り離すと同時に、銅板を切
断、曲げ加工して個片基板の周囲にリードを形成する工
程とからなるハイブリッドICのリード形成方法であ
る。A step of dividing the base material into long holes and forming an individual substrate in the base material; and a step of forming a flat copper plate along the surface of the base plate while straddling the long holes provided in the base material. And forming a lead around the individual substrate by cutting and bending the copper plate while separating the individual substrate from the base material.
【0008】さらに、基材を長孔にて区画し、その基材
内に個片基板を形成する工程と、基材に設けた長孔を跨
ぐ状態で、所定形状にフォーミングされた銅板を実装す
る工程と、基材から個片基板を切り離すと同時に、銅板
を切断して個片基板の周囲にリードを形成する工程とか
らなるハイブリッドICのリード形成方法である。Further, a step of dividing the base material by long holes and forming an individual substrate in the base material, and mounting a copper plate formed into a predetermined shape in a state of straddling the long holes provided in the base material. And forming a lead around the individual substrate by cutting the copper plate at the same time as separating the individual substrate from the base material.
【0009】[0009]
【作用】本発明のハイブリッドICのリード形成方法に
おいては、基材を長孔にて区画してからこの基材を幾枚
かの個片基板に分割するまでの一連の工程の中で、リー
ドとなる銅箔又は銅板が上記基材に設けた長孔を跨ぐ状
態で形成され、さらにそれらの銅箔又は銅板が基板分割
と同時に切断、曲げ加工されて、個片基板の周囲にリー
ドとして形成される。ここで、銅板が予め所定形状にフ
ォーミングされている場合は、基板分割時における銅板
の曲げ加工が不要となる。In the method for forming a lead of a hybrid IC according to the present invention, the lead is formed in a series of steps from partitioning the base material into long holes to dividing the base material into several individual substrates. A copper foil or copper plate to be formed is formed in a state of straddling the long hole provided in the base material, and the copper foil or copper plate is cut and bent at the same time as the substrate is divided and formed as leads around the individual substrate. Is done. Here, when the copper plate is formed into a predetermined shape in advance, the bending of the copper plate at the time of dividing the substrate becomes unnecessary.
【0010】[0010]
【実施例】以下、本発明の実施例を図面に基づいて詳細
に説明する。はじめに、本発明に係わるハイブリッドI
Cのリード形成方法の第1実施例について図1〜図5を
基に説明する。まず、図2に示すように集合基板となる
基材10の所定箇所に長孔11を設けて区画し、その基
材10内に例えば図例のように4枚の個片基板12を形
成する。各個片基板12は長孔11の端部近傍に形成さ
れる吊り部分13によって基材10と一体に保持され
る。次に、上述のように外形加工された基材10の表面
に銅箔14を積層する(図3参照)。これにより、基材
10に設けられた長孔11や個片基板12が銅箔14に
よって完全に覆われる。Embodiments of the present invention will be described below in detail with reference to the drawings. First, the hybrid I according to the present invention
A first embodiment of a method for forming leads C will be described with reference to FIGS. First, as shown in FIG. 2, an elongated hole 11 is provided at a predetermined position of a base material 10 serving as an aggregate substrate and partitioned, and four individual substrates 12 are formed in the base material 10, for example, as shown in FIG. . Each individual substrate 12 is held integrally with the base material 10 by a suspension portion 13 formed near the end of the long hole 11. Next, the copper foil 14 is laminated on the surface of the base material 10 having the outer shape processed as described above (see FIG. 3). Thereby, the long hole 11 and the individual substrate 12 provided in the base material 10 are completely covered with the copper foil 14.
【0011】続いて、基材10の表面に積層された銅箔
14の所定部分にレジストを塗布する。ここでは、基材
10表面に銅箔14として残したい部分にのみレジスト
を塗布する。例えば、個片基板12上に形成される配線
パターンや、この配線パターンに接続して形成されるリ
ード(後述)がその部分に該当する。Subsequently, a resist is applied to a predetermined portion of the copper foil 14 laminated on the surface of the substrate 10. Here, a resist is applied only to a portion to be left as the copper foil 14 on the surface of the base material 10. For example, a wiring pattern formed on the individual substrate 12 and a lead (described later) formed by connecting to the wiring pattern correspond to the portion.
【0012】次いで、レジストが塗布された部分を除い
て銅箔14をエッチングによって除去し、図示せぬ個片
基板12の配線パターンとともに、図1に示す如く基材
10の長孔11を跨ぐ状態で銅箔14を残す。Next, the copper foil 14 is removed by etching except for the portion to which the resist is applied, and the wiring pattern of the individual substrate 12 (not shown) is straddled over the long hole 11 of the base material 10 as shown in FIG. To leave the copper foil 14.
【0013】最後は、図示せぬ金型を用いて、基材10
から個片基板12を切り離すと同時に、基材10上に残
された銅箔14を図4の破線の位置(銅箔14の中央)
で切断し、さらに図5に示すように銅箔14を曲げ加工
して個片基板12の周囲にリード(14)を形成する。
因みに、基材10からの個片基板12の切り離しは、吊
り部分13を金型で打ち落とすことによって行われる。[0013] Finally, using a mold (not shown), the base material 10
At the same time when the individual substrate 12 is separated from the substrate, the copper foil 14 left on the base material 10 is moved to the position indicated by the broken line in FIG. 4 (the center of the copper foil 14).
Then, as shown in FIG. 5, the copper foil 14 is bent to form leads (14) around the individual substrate 12.
Incidentally, the individual substrate 12 is separated from the base material 10 by dropping the hanging portion 13 with a mold.
【0014】このように上述した第1実施例のリード形
成方法においては、ハイブリッドICのリードとなる部
分が基材10上のパターンニングと同時に形成されるよ
うになるため、従来のようなリード付けのための別工程
を設ける必要がなく、一連の基板製造工程の中でリード
形成を行うことが可能となる。また、個片基板12上に
配線パターンを形成する作業と同時進行で、リードとな
る銅箔14部分を形成することにより、基板製造にかか
る工数をほとんど増やすことなくリード形成を行うこと
が可能となる。これにより、従来方法におけるリードフ
レーム製造のための工数やこれを個片基板に組み込むた
めの工数が一切不要となり、もって大幅な作業工数の削
減が可能となる。As described above, in the lead forming method of the first embodiment, since the portion to be the lead of the hybrid IC is formed at the same time as the patterning on the base material 10, the conventional lead forming method is employed. It is not necessary to provide a separate step for forming the leads, and it is possible to form leads in a series of substrate manufacturing steps. Further, by forming the copper foil 14 serving as a lead simultaneously with the operation of forming the wiring pattern on the individual substrate 12, the lead can be formed with almost no increase in the man-hour required for manufacturing the substrate. Become. As a result, the man-hour for manufacturing the lead frame and the man-hour for incorporating the same into the individual substrate in the conventional method are not required at all, so that the number of man-hours can be significantly reduced.
【0015】次に、本発明に係わるハイブリッドICの
リード形成方法の第2実施例について図6〜図8に基に
説明する。まず、上記第1実施例の場合と同様に基材2
0の所定箇所に長孔21を設けて区画し、その基材20
内に幾枚かの個片基板22を形成する。ここで、各個片
基板22は長孔21の端部に形成される吊り部分23に
よって基材20と一体に保持される。Next, a second embodiment of a method for forming leads of a hybrid IC according to the present invention will be described with reference to FIGS. First, as in the case of the first embodiment, the substrate 2
0, a long hole 21 is provided at a predetermined position,
Several individual substrates 22 are formed therein. Here, each individual substrate 22 is held integrally with the base material 20 by a suspension portion 23 formed at an end of the long hole 21.
【0016】続いて、図6に示すように基材20に設け
た長孔21を跨ぐ状態で薄板状の銅板24を実装する。
この銅板24は、図7にも示すように予め所定の形状に
フォーミングされており、しかも夫々の銅板24は細長
い樹脂材25によって連結されている。さらに詳述する
と、銅板24の連結部はくさび状に切り欠かれており、
その切り欠き部分に溶かした樹脂材25を流し込んで硬
化させることにより各銅板24が連結されている。Subsequently, as shown in FIG. 6, a thin copper plate 24 is mounted so as to straddle a long hole 21 provided in the base material 20.
The copper plate 24 is formed into a predetermined shape in advance as shown in FIG. 7, and the respective copper plates 24 are connected by an elongated resin material 25. More specifically, the connecting portion of the copper plate 24 is cut out in a wedge shape,
Each of the copper plates 24 is connected by pouring and melting the resin material 25 dissolved in the cutout portion.
【0017】樹脂材25によって連結された銅板24
は、個片基板22に搭載される半導体素子やその他の個
別部品と同様に、図示せぬ搭載機によって基材20上に
搭載される。ここで、長孔21によって区画された個片
基板22の周縁には図示せぬランドが形成されており、
このランドに銅板24の両端が丁度位置するように、基
材20に対して銅板24の搭載がなされる。さらに、個
片基板22のランドには他の部品実装用のランドと同様
に予め所定量のハンダが供給され、これによりマウント
された銅板24が基材20上に仮付けされる。こうした
状態から基材20を例えばリフロー炉に通して所定温度
まで加熱することにより、個片基板22のランドと銅板
24の両端とがハンダによって接合される。Copper plate 24 connected by resin material 25
Are mounted on the base material 20 by a mounting machine (not shown), like the semiconductor elements and other individual components mounted on the individual substrate 22. Here, lands (not shown) are formed on the periphery of the individual substrate 22 defined by the long holes 21.
The copper plate 24 is mounted on the substrate 20 such that both ends of the copper plate 24 are located exactly on the lands. Further, a predetermined amount of solder is supplied to the lands of the individual substrate 22 in advance similarly to the lands for mounting other components, and the mounted copper plate 24 is temporarily attached on the base material 20. By heating the base material 20 to a predetermined temperature through, for example, a reflow furnace from such a state, the lands of the individual substrate 22 and both ends of the copper plate 24 are joined by solder.
【0018】最後は、図示せぬ金型を用いて、基材20
から個片基板22を切り離すと同時に、基材20上に実
装された銅板24を樹脂材25の連結部分で切り離し、
図8に示すように個片基板22の周囲にリード(24)
を形成する。因みに、基材20からの個片基板22の切
り離しは、先の実施例と同様に吊り部分23を金型で打
ち落とすことによって行われる。また、銅板24相互の
切り離しは、樹脂材25との連結部分を金型で切断する
ことにより行われる。Finally, using a mold (not shown),
At the same time, the copper plate 24 mounted on the base material 20 is separated at the connection portion of the resin material 25,
As shown in FIG. 8, leads (24) are provided around the individual substrate 22.
To form Incidentally, the separation of the individual substrate 22 from the base material 20 is performed by dropping the hanging portion 23 with a mold as in the previous embodiment. Further, the copper plates 24 are separated from each other by cutting a connection portion with the resin material 25 with a mold.
【0019】このように上述した第2実施例のリード形
成方法においては、ハイブリッドICのリードとなる銅
板24が、他の部品と同じように基材20上に表面実装
されるとともに、基板分割時に切断、曲げ加工されて個
片基板22の周囲にリードとして形成されるため、上記
第1実施例と同様にリード付けのための別工程を設ける
必要がなく、一連の基板製造工程の中でハイブリッドI
Cのリード形成を行うことが可能となる。また、リード
となる銅板24と個片基板22のランドとをリフロー方
式で接合させることでリード形成に伴う作業を全て自動
機で行わせることが可能となるため、人手がかからない
うえに大幅な作業工数の削減が可能となる。As described above, in the lead forming method according to the second embodiment, the copper plate 24 serving as the lead of the hybrid IC is surface-mounted on the base material 20 in the same manner as other components, and when the substrate is divided. Since it is cut and bent to form a lead around the individual substrate 22, there is no need to provide a separate step for lead attachment as in the first embodiment, and a hybrid process is performed in a series of substrate manufacturing steps. I
C lead formation can be performed. Also, since the copper plate 24 serving as the lead and the land of the individual substrate 22 are joined by a reflow method, all the work involved in forming the lead can be performed by an automatic machine. Man-hours can be reduced.
【0020】なお、上記第2実施例においては、予め銅
板24を所定形状にフォーミングしてから基材20上に
実装するようにしたが、本発明はこれに限らず、フォー
ミングしていない、所謂平板状の銅板を基材上に実装
し、これを基板分割と同時に切断、曲げ加工してリード
として形成するようにしてもよい。In the second embodiment, the copper plate 24 is formed into a predetermined shape in advance and then mounted on the substrate 20. However, the present invention is not limited to this. A flat copper plate may be mounted on a base material, which may be cut and bent at the same time as dividing the substrate to form leads.
【0021】[0021]
【発明の効果】以上、説明したように本発明によれば、
一連の基板製造工程の中でリード形成を行うことができ
るため、従来のように別工程でリードフレームを製造
し、これを個片基板に組み込むといった工程の煩雑さが
解消される。また、上述した一連の基板製造工程の中で
個片基板とリードとの電気的接続を得ることができるた
め、従来方法のように別々の工程で製造された個片基板
とリードフレームとをハンダ付けにより接続させるとい
った面倒な作業を行う必要がなくなり、これをもって大
幅な作業工数の削減が可能になると同時に、製品コスト
の低減が期待できる。As described above, according to the present invention,
Since the leads can be formed in a series of substrate manufacturing steps, the complexity of the steps of manufacturing a lead frame in a separate step and incorporating it into an individual substrate as in the related art is eliminated. In addition, since the electrical connection between the individual substrate and the lead can be obtained in the above-described series of substrate manufacturing steps, the individual substrate and the lead frame manufactured in separate steps as in the conventional method are soldered. It is not necessary to perform a troublesome work such as connection by attaching, so that it is possible to greatly reduce the number of work steps, and at the same time, it is possible to expect a reduction in product cost.
【図1】本発明の第1実施例のリード形成方法を説明す
る図(その1)である。FIG. 1 is a diagram (part 1) for explaining a lead forming method according to a first embodiment of the present invention;
【図2】本発明の第1実施例のリード形成方法を説明す
る図(その2)である。FIG. 2 is a diagram (part 2) for explaining the lead forming method according to the first embodiment of the present invention;
【図3】本発明の第1実施例のリード形成方法を説明す
る図(その3)である。FIG. 3 is a diagram (part 3) for explaining the lead forming method according to the first embodiment of the present invention;
【図4】本発明の第1実施例のリード形成方法を説明す
る図(その4)である。FIG. 4 is a diagram (part 4) for explaining the lead forming method according to the first embodiment of the present invention;
【図5】本発明の第1実施例のリード形成方法を説明す
る図(その5)である。FIG. 5 is a view (No. 5) for explaining the lead forming method according to the first embodiment of the present invention;
【図6】本発明の第2実施例のリード形成方法を説明す
る図(その1)である。FIG. 6 is a diagram (part 1) for explaining a lead forming method according to a second embodiment of the present invention;
【図7】第2実施例における銅板の説明図である。FIG. 7 is an explanatory view of a copper plate in a second embodiment.
【図8】本発明の第2実施例のリード形成方法を説明す
る図(その2)である。FIG. 8 is a diagram (part 2) for explaining the lead forming method according to the second embodiment of the present invention;
【図9】従来のリード形成方法を説明する図(その1)
である。FIG. 9 is a view for explaining a conventional lead forming method (part 1);
It is.
【図10】従来のリード形成方法を説明する図(その
2)である。FIG. 10 is a diagram (part 2) for explaining a conventional lead forming method;
【図11】従来のリード形成方法を説明する図(その
3)である。FIG. 11 is a diagram (part 3) for explaining a conventional lead forming method;
10、20 基材 11、21 長孔 12、22 個片基板 14 銅箔 24 銅板 10, 20 Substrate 11, 21 Slot 12, 22 Individual substrate 14 Copper foil 24 Copper plate
フロントページの続き (72)発明者 小菅 克也 東京都品川区北品川6丁目7番35号 ソ ニー株式会社内 (56)参考文献 特開 昭60−242631(JP,A) 実開 平1−16657(JP,U) (58)調査した分野(Int.Cl.7,DB名) H01L 23/50 H05K 1/02 Continuation of the front page (72) Inventor Katsuya Kosuge 6-7-35 Kita Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (56) References JP-A-60-242631 (JP, A) (JP, U) (58) Field surveyed (Int. Cl. 7 , DB name) H01L 23/50 H05K 1/02
Claims (3)
片基板を形成する工程と、 前記基材の表面に銅箔を積層する工程と、 前記銅箔の所定部分にレジストを塗布する工程と、 前記レジストが塗布された部分を除いて前記銅箔を除去
し、前記基材に設けた長孔を跨ぐ状態で前記銅箔を残す
工程と、 前記基材から前記個片基板を切り離すと同時に、前記残
された銅箔を切断、曲げ加工して前記個片基板の周囲に
リードを形成する工程とからなることを特徴とするハイ
ブリッドICのリード形成方法。A step of dividing a base material into long holes and forming an individual substrate in the base material; a step of laminating a copper foil on a surface of the base material; A step of applying a resist, a step of removing the copper foil except for a portion where the resist is applied, and a step of leaving the copper foil in a state of straddling a long hole provided in the base material; Forming a lead around the individual substrate by cutting and bending the remaining copper foil simultaneously with separating the single substrate.
片基板を形成する工程と、 前記基材に設けた長孔を跨ぐ状態で該基板面に沿って平
板状の銅板を実装する工程と、 前記基材から前記個片基板を切り離すと同時に、前記銅
板を切断、曲げ加工して前記個片基板の周囲にリードを
形成する工程とからなることを特徴とするハイブリッド
ICのリード形成方法。2. A step of dividing a base material by long holes, forming an individual substrate in the base material, and flattening the substrate along the surface of the substrate while straddling the long holes provided in the base material.
A step of mounting a plate-shaped copper plate, and a step of cutting and bending the copper plate and forming leads around the individual substrate at the same time as separating the individual substrate from the base material. Of forming a hybrid IC lead.
片基板を形成する工程と、 前記基材に設けた長孔を跨ぐ状態で、所定形状にフォー
ミングされた銅板を実装する工程と、 前記基材から前記個片基板を切り離すと同時に、前記銅
板を切断して前記個片基板の周囲にリードを形成する工
程とからなることを特徴とするハイブリッドICのリー
ド形成方法。3. A step of dividing a base material into long holes and forming an individual substrate in the base material, and forming a copper plate formed into a predetermined shape in a state of straddling the long holes provided in the base material. A method of forming a lead for a hybrid IC, comprising: a step of mounting; and a step of cutting the copper plate and forming leads around the individual substrate at the same time as separating the individual substrate from the base material. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25718792A JP3175336B2 (en) | 1992-08-31 | 1992-08-31 | Hybrid IC lead forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25718792A JP3175336B2 (en) | 1992-08-31 | 1992-08-31 | Hybrid IC lead forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0685128A JPH0685128A (en) | 1994-03-25 |
| JP3175336B2 true JP3175336B2 (en) | 2001-06-11 |
Family
ID=17302892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25718792A Expired - Fee Related JP3175336B2 (en) | 1992-08-31 | 1992-08-31 | Hybrid IC lead forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3175336B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4753749B2 (en) * | 2006-03-03 | 2011-08-24 | 日東電工株式会社 | Wiring circuit board assembly sheet and manufacturing method thereof |
-
1992
- 1992-08-31 JP JP25718792A patent/JP3175336B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0685128A (en) | 1994-03-25 |
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