JP3196941B2 - Plating equipment - Google Patents
Plating equipmentInfo
- Publication number
- JP3196941B2 JP3196941B2 JP09162392A JP9162392A JP3196941B2 JP 3196941 B2 JP3196941 B2 JP 3196941B2 JP 09162392 A JP09162392 A JP 09162392A JP 9162392 A JP9162392 A JP 9162392A JP 3196941 B2 JP3196941 B2 JP 3196941B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- anode electrode
- cathode electrode
- electrode
- plating solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Electroplating Methods And Accessories (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、めっき装置に関し、更
に詳しくは、各種電子部品用基板、ＩＣ用ウエハ、薄膜
磁気ヘッド用ウエハ等にめっきを施すのに好適なめっき
装置の改良に係る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating apparatus, and more particularly to an improvement in a plating apparatus suitable for plating various electronic component substrates, IC wafers, thin film magnetic head wafers, and the like.
【０００２】[0002]
【従来の技術】各種電子部品用基板、ＩＣ用ウエハ、薄
膜磁気ヘッド用ウエハ等においては、被めっき物である
基板もしくはウエハ上の限られた平面積内でめっきをし
なければならない。そのためのめっき装置は、めっき槽
と、カソード電極と、アノード電極とを含む。めっき槽
のめっき液は供給側から回収側に向かう流れを伴ってい
る。カソード電極はめっき槽の底部に配置され被めっき
物のめっき面に面接触しており、アノード電極はカソー
ド電極の上方に間隔を隔てて配置され、カソード電極と
平行になるように配置されている。2. Description of the Related Art Various electronic component substrates, IC wafers, thin film magnetic head wafers, and the like must be plated within a limited plane area on the substrate or wafer to be plated. A plating apparatus for that purpose includes a plating tank, a cathode electrode, and an anode electrode. The plating solution in the plating tank is accompanied by a flow from the supply side to the recovery side. The cathode electrode is arranged at the bottom of the plating tank and is in surface contact with the plating surface of the object to be plated, and the anode electrode is arranged above the cathode electrode at a distance and is arranged so as to be parallel to the cathode electrode. .
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、アノー
ド電極がカソード電極と平行になるように配置されてい
る従来のめっき装置は、めっき液の流れ方向に対応し
て、めっき液の供給側と回収側とで、めっき膜厚及び合
金めっき膜組成に差を生じることが分かった。具体的に
は、めっき膜厚がめっき液供給側で薄く回収側で厚くな
るように成膜され、めっき膜組成がめっき液供給側で一
方の成分のみが多くなるように成膜される。However, the conventional plating apparatus in which the anode electrode is arranged so as to be parallel to the cathode electrode has a plating solution supply side and a recovery side corresponding to the flow direction of the plating solution. It was found that there was a difference between the plating film thickness and the composition of the alloy plating film. Specifically, the film is formed such that the plating film thickness is thinner on the plating solution supply side and thicker on the recovery side, and the plating film composition is such that only one component is increased on the plating solution supply side.
【０００４】また、アノード電極から発生するＯ2ガス
がアノード電極の表面に付着し続け、泡切れが悪くな
り、電流効率が低下し、めっき成膜レートが変動し、め
っき膜厚が変動するという問題点もあった。[0004] Further, O 2 gas generated from the anode electrode continues to adhere to the surface of the anode electrode, so that bubbles disappear, the current efficiency decreases, the plating film formation rate fluctuates, and the plating film thickness fluctuates. There were also problems.
【０００５】そこで、本発明の課題は、上述する従来の
問題点を解決し、めっき膜厚及び膜組成の面内分布を均
一化できるめっき装置を提供することである。It is an object of the present invention to solve the above-mentioned conventional problems and to provide a plating apparatus capable of making the in-plane distribution of the plating film thickness and the film composition uniform.
【０００６】[0006]
【課題を解決するための手段】上述した課題解決のた
め、本発明に係るめっき装置は、めっき槽と、カソード
電極と、アノード電極とを含む。前記めっき槽は、槽内
にめっき液を収納し、前記めっき液が供給側から回収側
に向かう１つの流れ方向を有している。前記カソード電
極は、前記めっき槽の底部に配置され、被めっき物のめ
っき面に面接触する。前記アノード電極は、前記めっき
液中において前記カソード電極の上方に間隔を隔てて対
向して配置され、対向面が平面状であって前記カソード
電極に対して相対的に一方向に傾斜している。前記傾斜
方向は、前記カソード電極及び前記アノード電極の間の
間隔が、前記供給側で小さく、前記回収側で大きくなる
方向に設定されている。To solve the above-mentioned problems, a plating apparatus according to the present invention includes a plating tank, a cathode electrode, and an anode electrode. The plating tank stores a plating solution in the tank, and the plating solution has one flow direction from the supply side to the collection side. The cathode electrode is disposed at the bottom of the plating tank, and is in surface contact with the plating surface of the object to be plated. The anode electrode is disposed facing the cathode electrode at an interval above the cathode electrode in the plating solution, and the facing surface is planar and is inclined in one direction relative to the cathode electrode. . The slope
The direction is between the cathode electrode and the anode electrode.
The spacing is smaller on the supply side and larger on the recovery side
Direction is set .
【０００７】[0007]
【作用】アノード電極はめっき液中においてカソード電
極の上方に間隔を隔てて対向して配置され、対向面がカ
ソード電極に対して相対的に傾斜しているから、傾斜の
方向及び大きさの選定によって、めっき液の供給側と回
収側とで成膜されるめっき膜厚及び膜組成をコントロー
ルし、両者間の差を小さくできる。このため、ウエハ面
内の膜厚及び膜組成の分布を均一化できる。また、めっ
き液が供給側から回収側に向かう１つの流れ方向を有し
ているから、例えば、磁気ヘッドウエハーの場合のよう
に、磁気的異方性を有する磁性めっき膜を形成する必要
のある場合、めっき液の流れ方向を、磁界の方向に一致
させ、所定の磁気的異方性を有するめっき膜を形成する
ことができる。 The anode electrode is disposed above the cathode electrode in the plating solution at a distance from the cathode electrode, and the facing surface is inclined relative to the cathode electrode. Thereby, the plating film thickness and the film composition formed on the supply side and the recovery side of the plating solution can be controlled, and the difference between the two can be reduced. Therefore, the distribution of the film thickness and the film composition in the wafer surface can be made uniform. In addition,
Liquid has one flow direction from supply side to recovery side
Therefore, for example, as in the case of a magnetic head wafer
Need to form a magnetic plating film with magnetic anisotropy
If there is, the flow direction of the plating solution matches the direction of the magnetic field
To form a plating film having a predetermined magnetic anisotropy
be able to.
【０００８】アノード電極は、対向面が平面状であって
一方向に傾斜しているから、アノード電極から発生する
Ｏ2ガスがアノード電極の平面状対向面の一方向傾斜に
添って移動し、最終的にはアノード電極から離れる。し
かも、アノード電極の傾斜方向は、カソード電極及びア
ノード電極の間の間隔が、供給側で小さく、回収側で大
きくなる方向に設定されているから、アノード電極から
発生するＯ 2 ガスが、めっき液の流れに乗って移動す
る。このため、泡切れが良くなり、電流効率が向上し、
めっき成膜レート及びめっき膜厚の変動が抑制される。[0008] Since the anode electrode has a flat opposing surface and is inclined in one direction, O 2 gas generated from the anode electrode moves along one direction inclination of the planar opposing surface of the anode electrode, Eventually, it separates from the anode electrode. I
The inclination direction of the anode electrode depends on the cathode electrode and the anode.
The distance between the node electrodes is small on the supply side and large on the collection side.
From the anode electrode
The generated O 2 gas moves along with the plating solution flow.
You. For this reason, the bubble removal is improved, the current efficiency is improved,
Variations in plating film formation rate and plating film thickness are suppressed.
【０００９】[0009]
【実施例】図１は本発明に係るめっき装置の概略を示す
図である。図において、１はめっき槽、２はカソード電
極、３はアノード電極、４は被めっき物、５は電源装置
である。FIG. 1 is a view schematically showing a plating apparatus according to the present invention. In the figure, 1 is a plating tank, 2 is a cathode electrode, 3 is an anode electrode, 4 is an object to be plated, and 5 is a power supply device.
【００１０】めっき槽１は、槽本体１０内にめっき液１
１を収納している。めっき液１１は供給側から回収側に
向かう矢印ａで示す流れを有している。めっき槽１は、
槽本体１０が相対する両側に供給管１２及び回収管１３
を有するとともに、内部に内筒体１４を有する。内筒体
１４は槽本体１０の内周及び底部と間隔を隔てて配置さ
れていて、間隔を通ってめっき液１１が流れる。供給管
１２及び回収管１３は槽本体１０の上端部に連なってい
る。めっき液１１は供給管１２を通り槽本体１０の上部
から供給され、槽本体１０の内部を通過した後、槽本体
１０の上部から回収管１３の内部に流下して回収され
る。めっき液１１は得ようとするめっき膜に応じた浴組
成が選択される。The plating tank 1 is provided with a plating solution 1 in a tank body 10.
1 is stored. The plating solution 11 has a flow indicated by an arrow a from the supply side to the recovery side. The plating tank 1
A supply pipe 12 and a recovery pipe 13 are provided on opposite sides of the tank body 10.
And an inner cylinder 14 inside. The inner cylinder 14 is arranged at an interval from the inner periphery and the bottom of the tank body 10, and the plating solution 11 flows through the interval. The supply pipe 12 and the recovery pipe 13 are connected to the upper end of the tank body 10. The plating solution 11 is supplied from the upper part of the tank body 10 through the supply pipe 12, passes through the inside of the tank body 10, and then flows down from the upper part of the tank body 10 to the inside of the collection pipe 13 to be collected. As the plating solution 11, a bath composition corresponding to a plating film to be obtained is selected.
【００１１】カソード電極２は、電気伝導性の良好な金
属板を用いて構成され、開口部２１を有する。開口部２
１は槽本体１０に開口し、周縁が被めっき物４のめっき
面に面接触し、開口面積が被めっき物４のめっき領域を
画定する。カソード電極２は槽本体１０内のめっき液１
１が漏れないように、被めっき物４の面上に密接に面接
触して配置されると共に、めっき槽１の底部１５に密着
して配置されている。被めっき物４は、図示しない着脱
装置により、矢印Ｆの方向に押されてカソード電極２に
密着している。アノード電極３は、めっき液１１中にお
いてカソード電極２の上方に間隔を隔てて対向して配置
されている。６はアノード電極３を支持する支持装置で
ある。アノード電極３は、対向面３１が平面状であって
カソード電極２に対して相対的に一方向に傾斜してい
る。図示では、カソード電極２は対向面が実質的に水平
面を構成しており、アノード電極３は対向面３１がカソ
ード電極２の対向面に対して角度θ（＜９０度）で傾斜
している。図示の傾斜方向は、間隔がめっき液１１の供
給側で小さく、回収側で大きくなる方向に設定されてい
る。The cathode electrode 2 is formed using a metal plate having good electric conductivity, and has an opening 21. Opening 2
Reference numeral 1 denotes an opening in the tank body 10, the periphery of which is in surface contact with the plating surface of the plating object 4, and the opening area defines a plating area of the plating object 4. The cathode electrode 2 is a plating solution 1 in the tank body 10.
1 is arranged in close contact with the surface of the plating object 4 so as not to leak, and is arranged in close contact with the bottom 15 of the plating tank 1. The object to be plated 4 is pushed in the direction of arrow F by an attaching / detaching device (not shown) and is in close contact with the cathode electrode 2. The anode electrode 3 is disposed above the cathode electrode 2 in the plating solution 11 so as to face with a space therebetween. Reference numeral 6 denotes a support device for supporting the anode electrode 3. The anode electrode 3 has a facing surface 31 that is flat.
Inclined in one direction relative to the cathode electrode 2
You. In the drawing, the facing surface of the cathode electrode 2 substantially forms a horizontal plane, and the facing surface 31 of the anode electrode 3 is inclined at an angle θ (<90 degrees) with respect to the facing surface of the cathode electrode 2. The illustrated inclination direction is set so that the interval is small on the supply side of the plating solution 11 and large on the recovery side.
【００１２】電源装置５はカソード電極２と、アノード
電極電極３との間に接続され、両者２ー３間に直流電圧
を印加する。The power supply device 5 is connected between the cathode electrode 2 and the anode electrode 3 and applies a DC voltage between the two.
【００１３】上述のように、カソード電極２及びアノー
ド電極３は、それぞれの対向面が相対的に角度θで傾斜
しているから、傾斜方向及び大きさの選定によって、め
っき液１１の供給側と回収側とで成膜されるめっき膜厚
及び膜組成をコントロールし、両者間の差を小さくでき
る。このため、ウエハ面内の膜厚及び膜組成の分布を均
一化できる。しかも、めっき液１１が供給側から回収側
に向かう１つの流れ方向を有しているから、磁気ヘッド
ウエハの場合のように、磁気的異方性を有する磁性めっ
き膜を形成する必要のある場合、めっき液の流れ方向
を、磁界の方向に一致させ、所定の磁気的異方性を有す
るめっき膜を形成することができる。めっき液１１の流
れ方向が双方向になる場合には、めっき液の流れ方向の
少なくとも半分は、磁界の方向と逆方向または不一致に
なるので、磁気的異方性を有するめっき膜の形成に、不
利になる。 As described above, since the cathode electrode 2 and the anode electrode 3 have their respective opposing surfaces inclined at an angle θ relatively, the cathode electrode 2 and the anode electrode 3 can be connected to the supply side of the plating solution 11 by selecting the inclination direction and size. By controlling the thickness and composition of the plating film formed on the collecting side, the difference between the two can be reduced. Therefore, the distribution of the film thickness and the film composition in the wafer surface can be made uniform. Moreover, the plating solution 11 is moved from the supply side to the collection side.
Magnetic head because it has one flow direction towards
As with wafers, magnetically anisotropic
When a plating film needs to be formed, the flow direction of the plating solution
With the direction of the magnetic field and have a predetermined magnetic anisotropy
Plating film can be formed. Flow of plating solution 11
If the flow direction is bidirectional,
At least half in the opposite or mismatched direction of the magnetic field
Therefore, it is difficult to form a plating film having magnetic anisotropy.
Be profitable.
【００１４】また、アノード電極３は、対向面３１が平
面状であって一方向に傾斜しているから、アノード電極
３の対向面３１から発生するＯ2ガスが、アノード電極
３の対向面３１の傾斜に添って移動し、最終的にはアノ
ード電極３から離れる。しかも、アノード電極３の傾斜
方向は、カソード電極２及びアノード電極３の間の間隔
が、供給側で小さく、回収側で大きくなる方向に設定さ
れているから、アノード電極３から発生するＯ 2 ガス
が、めっき液１１の流れに乗って移動する。このため、
泡切れが良くなり、電流効率が向上し、めっき成膜レー
ト及びめっき膜厚の変動が抑制される。Further, since the opposite surface 31 of the anode electrode 3 is flat and inclined in one direction, O 2 gas generated from the opposite surface 31 of the anode electrode 3 emits O 2 gas. And finally separates from the anode electrode 3. Moreover, the inclination of the anode electrode 3
The direction is the distance between the cathode electrode 2 and the anode electrode 3.
Is set to be smaller on the supply side and larger on the recovery side.
O 2 gas generated from the anode electrode 3
Move along with the flow of the plating solution 11. For this reason,
Bubble elimination is improved, current efficiency is improved, and fluctuations in plating film formation rate and plating film thickness are suppressed.
【００１５】次に、本発明に係るめっき装置を薄膜磁気
ヘッドの製造工程におけるパーマロイ膜めっきに用いた
具体例を参照して、本発明の作用効果を説明する。図２
は図１のめっき装置においてアノード電極３の傾斜角度
θを、０度、１５度、３０度、４５度の順に変えた場合
のウエハ上膜厚分布を３次元的に示す実測データ、図３
は同じくウエハ上組成分布を３次元的に示す実測データ
である。Next, the function and effect of the present invention will be described with reference to a specific example in which the plating apparatus according to the present invention is used for permalloy film plating in the process of manufacturing a thin film magnetic head. FIG.
FIG. 3 shows actually measured data three-dimensionally showing a film thickness distribution on a wafer when the inclination angle θ of the anode electrode 3 is changed in the order of 0 degree, 15 degrees, 30 degrees, and 45 degrees in the plating apparatus of FIG.
Is actually measured data three-dimensionally showing the composition distribution on the wafer.
【００１６】めっき浴組成分は次のように選定した。The components of the plating bath were selected as follows.
【００１７】 ＮｉＳＯ4．６Ｈ2Ｏ ３００〜３５０（ｇ／リットル） ＦｅＳＯ4．７Ｈ2Ｏ １〜１０ （ｇ／リットル） Ｈ3ＢＯ3 ５〜５０ （ｇ／リットル） ＮＨ4Ｃｌ ５〜４０ （ｇ／リットル） サッカリンナトリウム １〜５ （ｇ／リットル） ラウリル硫酸ナトリウム ０．０１〜０．１０（ｇ／リットル） 図２において、傾斜角度θ＝０は従来のめっき装置のデ
ータであり、ウエハ内のパーマロイのめっき膜厚がめっ
き液供給側で薄くなり、回収側で厚くなっており、膜厚
分布特性が悪くなっている。これに対して、傾斜角度θ
が０度、１５度、３０度、４５度に設定された本発明に
係るめっき装置では、めっき液供給側のめっき膜厚が増
大し、全体として、ウエハ内の膜厚分布が改善されてい
る。[0017] NiSO 4 . 6H 2 O 300~350 (g / l) FeSO 4. 7H 2 O 1~10 (g / liter) H 3 BO 3 5~50 (g / liter) NH 4 Cl 5~40 (g / l) sodium saccharin 1 to 5 (g / liter) Sodium lauryl sulfate 0.01 0.10 (g / liter) In FIG. 2, the inclination angle θ = 0 is the data of the conventional plating apparatus, and the film thickness of permalloy in the wafer becomes thinner on the plating solution supply side and thicker on the recovery side. Therefore, the film thickness distribution characteristics are deteriorated. On the other hand, the inclination angle θ
Is set to 0 degree, 15 degrees, 30 degrees, and 45 degrees, the plating film thickness on the plating solution supply side increases, and the film thickness distribution in the wafer is improved as a whole. .
【００１８】図３において、傾斜角度θ＝０は従来のめ
っき装置のデータであり、ウエハ内のパーマロイのめっ
き膜組成がめっき液供給側でＮｉリッチの特性となり、
膜組成の分布特性が悪くなっている。これに対して、傾
斜角度θが０度、１５度、３０度、４５度に設定された
本発明に係るめっき装置では、めっき液供給側のＮｉリ
ッチの傾向が改善されている。In FIG. 3, the inclination angle θ = 0 is data of the conventional plating apparatus, and the composition of the permalloy plating film in the wafer becomes Ni-rich on the plating solution supply side,
The distribution characteristics of the film composition are poor. On the other hand, in the plating apparatus according to the present invention in which the inclination angle θ is set to 0 degree, 15 degrees, 30 degrees, and 45 degrees, the Ni-rich tendency on the plating solution supply side is improved.
【００１９】[0019]
【発明の効果】以上述べたように、本発明に係るめっき
装置によれば、次のような効果が得られる。 （ａ）傾斜の方向及び大きさの選定によって、めっき液
の供給側と回収側とで成膜されるめっき膜厚及び膜組成
をコントロールし、ウエハ面内の膜厚及び膜組成の分布
を均一化し得るめっき装置を提供できる。 （ｂ）アノード電極におけるＯ2ガスの泡切れが良く、
めっき成膜レート及びめっき膜厚の変動を抑制し得るめ
っき装置を提供できる。As described above, according to the plating apparatus of the present invention, the following effects can be obtained. (A) By selecting the direction and size of the inclination, the thickness and composition of the plating film formed on the supply side and the recovery side of the plating solution are controlled, and the distribution of the film thickness and the film composition on the wafer surface is made uniform. It is possible to provide a plating apparatus that can be converted into a plating apparatus. (B) O 2 gas bubbles in the anode electrode are good.
It is possible to provide a plating apparatus capable of suppressing fluctuations in a plating film formation rate and a plating film thickness.
【図１】本発明に係るめっき装置の概略図である。FIG. 1 is a schematic diagram of a plating apparatus according to the present invention.
【図２】図１のめっき装置においてアノード電極の傾斜
角度を変えた場合のウエハ上膜厚分布を３次元的に示す
実測データである。FIG. 2 shows actually measured data three-dimensionally showing a film thickness distribution on a wafer when the inclination angle of an anode electrode is changed in the plating apparatus of FIG.
【図３】図１のめっき装置においてアノード電極の傾斜
角度を変えた場合のウエハ上組成分布を３次元的に示す
実測データである。FIG. 3 shows actually measured data three-dimensionally showing a composition distribution on a wafer when the inclination angle of an anode electrode is changed in the plating apparatus of FIG.
１ めっき槽 ２ カソード電極 ３ アノード電極 ３１ 対向面 DESCRIPTION OF SYMBOLS 1 Plating tank 2 Cathode electrode 3 Anode electrode 31 Opposite surface
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−7392（ＪＰ，Ａ) 特開 昭61−190091（ＪＰ，Ａ) 実開 平３−103260（ＪＰ，Ｕ) 実開 昭51−67675（ＪＰ，Ｕ) 実開 昭63−11567（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) C25D 5/00 - 7/12 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-63-7392 (JP, A) JP-A-61-190091 (JP, A) Fully open 3-103260 (JP, U) Really open Showa 51- 67675 (JP, U) Fully open 63-1567 (JP, U) (58) Field surveyed (Int. Cl. 7 , DB name) C25D 5/00-7/12
Claims (1)
電極とを含むめっき装置であって、 前記めっき槽は、槽内にめっき液を収納し、前記めっき
液が供給側から回収側に向かう１つの流れ方向を有して
おり、 前記カソード電極は、前記めっき槽の底部に配置され、
被めっき物のめっき面に面接触するものであり、 前記アノード電極は、前記めっき液中において前記カソ
ード電極の上方に間隔を隔てて対向して配置され、対向
面が平面状であって前記カソード電極に対して相対的に
一方向に傾斜しており、 前記傾斜方向は、前記カソード電極及び前記アノード電
極の間の間隔が、前記供給側で小さく、前記回収側で大
きくなる方向に設定されているめっき装置。1. A plating apparatus including a plating tank, a cathode electrode, and an anode electrode, wherein the plating tank stores a plating solution in the tank, and the plating solution flows from a supply side to a collection side. The cathode electrode is disposed at the bottom of the plating tank,
The anode electrode is in surface contact with a plating surface of an object to be plated, and the anode electrode is disposed above the cathode electrode at an interval in the plating solution at an interval, and the facing surface is planar and the cathode It is inclined in one direction relative to the electrode, and the inclination direction is set so that the interval between the cathode electrode and the anode electrode is small on the supply side and large on the recovery side. Plating equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09162392A JP3196941B2 (en) | 1992-03-17 | 1992-03-17 | Plating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09162392A JP3196941B2 (en) | 1992-03-17 | 1992-03-17 | Plating equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05263289A JPH05263289A (en) | 1993-10-12 |
| JP3196941B2 true JP3196941B2 (en) | 2001-08-06 |
Family
ID=14031695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09162392A Expired - Fee Related JP3196941B2 (en) | 1992-03-17 | 1992-03-17 | Plating equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3196941B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12315910B2 (en) | 2020-08-21 | 2025-05-27 | Lg Energy Solution, Ltd. | Device for pre-lithiation of negative electrode and method for pre-lithiation of negative electrode |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3103260U (en) | 2004-01-28 | 2004-08-05 | 高須産業株式会社 | Ventilation system for window mounting with exhaust fan and air supply fan |
-
1992
- 1992-03-17 JP JP09162392A patent/JP3196941B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3103260U (en) | 2004-01-28 | 2004-08-05 | 高須産業株式会社 | Ventilation system for window mounting with exhaust fan and air supply fan |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12315910B2 (en) | 2020-08-21 | 2025-05-27 | Lg Energy Solution, Ltd. | Device for pre-lithiation of negative electrode and method for pre-lithiation of negative electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05263289A (en) | 1993-10-12 |
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