JP3200396B2 - Substrate processing apparatus and film forming method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for performing processing such as film formation on a semiconductor wafer in a single wafer type or a small number.

[0002]

2. Description of the Related Art Conventionally, a reaction tube used in this type of substrate processing apparatus has the following structure. FIG. 15 is a plan view for explaining a reaction tube used in a conventional substrate processing apparatus.

The substrate processing apparatus 200 includes a heater 70
And a reaction tube 80 provided in the heater 70. The reaction tube 80 includes a reaction tube main body 81 and a reaction gas introduction tube 8.
5 and a reaction tube flange 83. Reaction tube body 8
A reaction gas inlet 82 is provided at a central portion on the upstream side of 1. A reaction gas introduction pipe 85 is provided in communication with the inside of the reaction tube main body 81 via the reaction gas introduction port 82.
A reaction tube flange 83 is provided on the downstream side of the reaction tube main body 81.
4 are provided. While the semiconductor wafer 90 is held in the reaction tube main body 81, the semiconductor wafer 90 is heated by the heater 70, and a reaction gas is introduced into the reaction tube main body 81 from the reaction gas introduction port 82 to react through the wafer transfer port 84 of the reaction tube flange 83. By discharging the gas, processing such as film formation of the semiconductor substrate 90 is performed.

[0004]

However, in the reaction tube 80 having such a conventional structure, the reaction gas is introduced into the reaction tube 80 without being sufficiently heated. Side temperature drops,
There is a problem that the film thickness formed on the semiconductor wafer 90 becomes uneven.

Accordingly, it is an object of the present invention to provide a substrate processing apparatus capable of solving the above-mentioned problems of the prior art and performing a uniform substrate processing such as obtaining a good distribution of the formed film thickness.

[0006]

According to claim 1, a ceiling is provided.
A first gas introduction portion and a first gas introduction portion which are separated from the bottom plate by a predetermined distance;
Including a gas and gas exhaust unit and first to third side plates.
A pipe body, wherein the first side plate is the first gas inlet.
Part, and the second and third side plates are provided with the first gas guide.
Along the direction of gas flow from the inlet to the gas exhaust.
The reaction tube main body provided outside the reaction tube main body
Heating means provided on the side, the ceiling plate and the bottom
Before facing one or both of the boards
The heating means, and a substrate holder installed in the reaction tube main body, wherein a substrate to be processed can be held in the reaction tube main body between the first gas introduction unit and the gas exhaust unit. The substrate holder, the second side plate and the third side plate.
A gas heating pipe disposed along one or both of the first and second gas introduction pipes, the gas heating pipe having a second gas introduction part and a gas derivation part, wherein the gas derivation part is the first gas introduction part of the reaction tube main body. And a gas heating tube communicating with the section.

In this way, the gas preheated by the gas heating tube is introduced into the reaction tube main body. Therefore,
The cooling of the upstream side of the substrate to be processed by the gas is suppressed, and the uniformity of the temperature distribution in the surface of the substrate to be processed is improved. As a result, the in-plane film thickness of the film formed on the substrate to be processed becomes uniform. In particular, the uniformity of the film thickness in the gas flow direction is improved.
Further, depending on the type of gas, the gas can be sufficiently decomposed in the gas heating means, and as a result, the film quality is improved. Further, since the gas heating tube is provided along the reaction tube main body, the size of the substrate processing apparatus can be reduced. Furthermore, since the gas heating tube has a folded structure, the length of the region where the gas heating tube is provided along the reaction tube main body can be shortened, and the reaction tube main body is not hindered by the gas heating tube. The area in which the inside of the reaction tube main body can be observed through the passage increases.

As described above, the gas heating tube is connected to the side plate of the reaction tube main body.
The height of the substrate processing equipment
Temperature distribution in the plane of the substrate to be processed.
Can be easily made uniform. In contrast, gas heating
By arranging heat tubes along the ceiling plate and bottom plate of the reaction tube body,
The height of the substrate processing apparatus increases accordingly. Few
Reaction required to process a large number of substrates on a dedicated floor space
It is considered effective to stack multiple pipe bodies vertically
However, in this case, the gas heating tube is connected to the ceiling plate or bottom of the reaction tube body.
A reaction tube body that can be stacked vertically by arranging it along the plate
And the number of substrates to be processed per unit occupied floor area
The number will decrease.

Further , the gas heating tube may be connected to the ceiling plate of the reaction tube main body or the like.
When installed along the bottom plate, these ceiling plates and bottom plate
Since it is provided parallel to the main surface of the substrate to be processed,
Heat pipes are arranged evenly along the ceiling plate and bottom plate of the reaction tube body.
Unless the temperature distribution in the plane of the substrate is uniform,
And it will be difficult. In addition, the gas heating tube is
With a structure that is evenly arranged along the ceiling and bottom plates of the main unit
Are difficult to manufacture and cost increases.
U.

Further, according to claim 2 , the first gas
The introduction section and the gas exhaust section are arranged in a predetermined first direction.
At a predetermined distance, and the substrate holder is
The substrate to be processed is placed on the main surface of the substrate to be processed in the first direction.
A first direction including a first direction and a second direction perpendicular to the first direction.
It can be held almost parallel to the plane,
The gas flowing through the gas heating tube is first filled with the first gas.
The gas flows from the gas introduction section toward the gas exhaust section,
After turning back, the first gas introduction from the gas exhaust unit side
Characterized by having a structure that flows toward the part side
A substrate processing apparatus according to claim 1 is provided.

According to the third aspect , the reaction tube main body is positioned at the second direction with respect to a predetermined center line in the first direction.
Has a substantially symmetrical structure in the
The holding member is substantially in the second direction with respect to the center line;
The substrate to be processed is
Substantially symmetrical in the second direction with respect to the center line
, And the gas heating tube is positioned with respect to the center line.
Have a substantially symmetrical structure in the second direction.
A substrate processing apparatus according to claim 1 or 2, wherein:

Further , according to claim 4, the first side plate is provided.
Are substantially perpendicular to the first direction, and the ceiling plate and
The bottom plate is substantially parallel to the first plane;
And a third side plate is substantially parallel to the first direction and
The gas heating tube is substantially perpendicular to the first plane,
The gas flowing in the gas heating pipe is first introduced into the first gas introduction section.
Flows almost linearly from the side to the gas exhaust side.
After the first gas guide from the gas exhaust unit side.
Has a structure that flows almost linearly toward the entrance
A group according to any one of claims 1 to 3, characterized in that:
A plate processing apparatus is provided.

Further , according to claim 5, the reaction tube main body is provided.
A first side plate substantially perpendicular to the first direction;
A ceiling plate and a bottom plate substantially parallel to the first plane;
A second direction substantially parallel to the first direction and substantially perpendicular to the first plane.
And a third side plate, wherein the first gas introduction portion is
The gas heating tube is provided on the first side plate, and is provided on the second side plate.
Any one of the side plate and the third side plate or
Are arranged along both sides.
A substrate processing apparatus according to any one of 1 to 4, is provided.
You.

[0014] Also, according to claim 5, wherein the gas heating tube, according to claim 4, wherein the first side plate, being provided along said second side plate and the third plate
A substrate processing apparatus as described above is provided.

Further, according to claim 6 , the gas heating pipe is configured such that the gas flowing in the gas heating pipe is arranged so that the gas flowing in the gas heating pipe from the first gas introduction part side to the gas exhaust part side has the second side plate and the gas exhaust part side. The gas flows along the third side plate, and then turns back and flows again along the second side plate and the third side plate from the gas exhaust unit toward the first gas introduction unit, respectively. The substrate processing apparatus according to claim 5 , wherein the apparatus has a structure that flows along the first side plate.

According to a seventh aspect of the present invention, the gas heating tube is arranged such that the gas flowing in the gas heating tube is substantially centered in the second direction of the first side plate along the first side plate. From the part toward the second side plate and the third side plate, respectively, and then from the first gas introduction unit side to the gas exhaust unit side to the second side plate and the third side plate, respectively. Flows along the second side plate and the third side plate again from the gas exhaust portion side toward the first gas introduction portion side, and then returns to the first side plate. 7. The substrate processing apparatus according to claim 6 , wherein the substrate processing apparatus has a structure that flows along the substrate.

Further, according to claim 8 , the gas heating pipe is provided with first and second pipes arranged in the first direction along the second side plate, and the third side plate. A third pipe and a fourth pipe disposed in the first direction along the first direction, a fifth pipe disposed in the second direction along the first side plate, and a gas introduction pipe. Wherein the gas introduction pipe communicates with one end of the first pipe and one end of the third pipe,
The other end of the first tube communicates with one end of the second tube, the other end of the third tube communicates with one end of the fourth tube, and the other end of the second tube The other end communicates with one end of the fifth tube, the other end of the fourth tube communicates with the other end of the fifth tube, and the fifth tube communicates with the first gas. The substrate processing apparatus according to any one of claims 1 to 7 , further comprising the gas outlet unit communicating with the inlet unit.

According to the ninth aspect , the gas heating pipe further includes a sixth pipe disposed in the second direction along the first side plate, and the gas introduction pipe is provided with a sixth pipe. 9. The substrate processing apparatus according to claim 8 , wherein both the one end of the first tube and the one end of the third tube communicate with each other via a sixth tube.

According to a tenth aspect , the gas heating pipe extends from the first gas introduction section toward the gas exhaust section, and the gas heating tube is provided on the gas exhaust section side of the substrate to be processed. according to any one of claims 1 to 9, characterized in that it has a structure that extends toward the first gas inlet side from the gas discharge portion side is folded in front of the end Is provided.

With this configuration, a part of the substrate to be processed and a part of the substrate holder can be observed through the reaction tube main body in a region where the gas heating tube is not provided. Teaching can be easily performed for the step of mounting the substrate on the substrate and the step of removing the substrate to be processed from the substrate holder.

According to the eleventh aspect , the gas heating pipe extends from the first gas introduction unit side to the gas exhaust unit side, and is located near the center of the substrate to be processed or the center. The substrate processing apparatus according to claim 10 , wherein the substrate processing apparatus has a structure in which the substrate processing apparatus has a structure that is folded back on a front side of the part and extends from the gas exhaust part side to the first gas introduction part side. You.

With this arrangement, more than half of the substrate to be processed and more than half of the substrate mounting portion of the substrate holder can be observed through the reaction tube main body in the region where the gas heating tube is not provided. Teaching for the process of mounting the processing substrate on the substrate holder and the process of removing the substrate to be processed from the substrate holder can be performed more easily and reliably.

[0023] According to claim 12 , the first side.
The board is substantially perpendicular to the first direction and the ceiling board and
And the bottom plate is substantially parallel to the first plane;
And a third side plate is substantially parallel to the first direction and
Serial substantially perpendicular to the first plane, the gas heating tube, according to claim 10 or 11 further characterized in that it is arranged along both of the second side plate and the third plate A substrate processing apparatus is provided.

By arranging the gas heating tubes along both the second side plate and the third side plate in this way, the substrate to be processed can be observed over the entire surface via the ceiling plate or the bottom plate, and the substrate holder Of the substrate to be processed can be observed over substantially the entire surface, so that the front, rear, left and right teaching in the first plane direction for the step of mounting the substrate to be processed on the substrate holder and the step of removing the substrate to be processed from the substrate holder is easy. And can be performed reliably. As described above, the front, rear, left and right teaching in the first plane direction can be performed by observing through the ceiling plate or the bottom plate. Therefore, the teaching through the second side plate or the third side plate can be performed in the up and down direction. It does not need to be observable over the entire substrate to be processed,
It becomes possible if part of it can be observed. At this time, if more than half of the substrate to be processed and more than half of the substrate mounting part of the substrate holder can be observed, teaching for the process of mounting the substrate to be processed on the substrate holder and the process of removing the substrate to be processed from the substrate holder is performed. Can be performed more easily and reliably.

Further, according to claim 13 , the first side.
The board is substantially perpendicular to the first direction and the ceiling board and
And the bottom plate is substantially parallel to the first plane;
And a third side plate is substantially parallel to the first direction and
Substantially perpendicular to the first plane, wherein the gas outlet of the gas heating tube is provided along the first side plate;
The substrate processing apparatus is provided as claimed in any one of claims 1 to 12, characterized in that the gas outlet portion has a plurality of gas discharge ports provided substantially parallel to the second direction .

As described above, by providing a plurality of gas outlets in parallel with the main surface of the substrate to be processed, the gas is introduced in a shower shape, and the gas flow on the main surface of the substrate to be processed is laminar. As a result, the film thickness uniformity is improved.

According to a fourteenth aspect , the reaction tube main body has a structure substantially bilaterally symmetric in the second direction with respect to a predetermined center line in the first direction, and The tool has a structure that is substantially symmetrical in the second direction with respect to the center line, and can hold the substrate to be processed substantially symmetrically in the second direction with respect to the center line; The gas heating pipe has a structure that is substantially symmetrical in the second direction with respect to the center line, and the plurality of gas outlets are substantially aligned in the second direction with respect to the center line. 14. The substrate processing apparatus according to claim 13 , wherein the substrate processing apparatus is disposed symmetrically in a horizontal direction.

By adopting such a symmetrical structure, it is possible to maintain the right and left temperature balance, and it is also possible to make the flow rate of the gas introduced into the reaction tube main body equal to the left and right. As a result, the in-plane film thickness uniformity of the film formed on the substrate to be processed, particularly, the film thickness uniformity in the left-right direction with respect to the gas flow direction is improved.

Further, according to claim 15 , the plurality of gas outlets are formed from the vicinity of a first corner formed by the first side plate and the second side plate and the first side plate and the second side plate. The substrate processing apparatus according to claim 13 or 14 , wherein the substrate processing apparatus is provided up to a vicinity of a second corner formed by the third side plate.

As described above, by disposing the gas outlets near both corners of the first side plate of the reaction tube main body, the turbulent flow area of the gas introduced into the reaction tube main body can be reduced. In addition, the gas flow can be made laminar, and the gas replacement efficiency can be improved.

According to claim 16 , the first gas introduction portion of the reaction tube main body is an opening provided in the first side plate and exposes the plurality of gas outlets. 13 through claim, characterized in that it has an opening
15. A substrate processing apparatus according to any one of 15 .

[0032] According to claim 17 , the first side.
The board is substantially perpendicular to the first direction and the ceiling board and
And the bottom plate is substantially parallel to the first plane;
And a third side plate is substantially parallel to the first direction and
The first gas inlet is substantially perpendicular to the first plane, and the first gas inlet has a plurality of gas inlets provided on the first side plate substantially in parallel with the second direction. A substrate processing apparatus according to any one of claims 1 to 15 is provided.

As described above, by providing a plurality of gas inlets in parallel with the main surface of the substrate to be processed, the gas is introduced in a shower shape, and the flow of the gas on the main surface of the substrate to be processed becomes laminar. As a result, the film thickness uniformity is improved.

Further, according to claim 18 , the reaction tube main body has a structure substantially symmetrical in the second direction with respect to a predetermined center line in the first direction, and The tool has a structure that is substantially symmetrical in the second direction with respect to the center line, and can hold the substrate to be processed substantially symmetrically in the second direction with respect to the center line; The gas heating tube has a structure that is substantially symmetrical in the second direction with respect to the center line, and the plurality of gas introduction ports are substantially aligned in the second direction with respect to the center line. 18. The substrate processing apparatus according to claim 17 , wherein the substrate processing apparatus is symmetrically disposed.

By adopting such a symmetrical structure, it is possible to maintain the right and left temperature balance, and it is also possible to equalize the flow velocity of the gas introduced into the reaction tube main body. As a result, the in-plane film thickness uniformity of the film formed on the substrate to be processed, particularly, the film thickness uniformity in the left-right direction with respect to the gas flow direction is improved.

According to a nineteenth aspect , the plurality of gas inlets are formed in the vicinity of a first corner formed by the first side plate and the second side plate, and the first side plate and the first side plate are connected to each other. the third side plate and that is disposed to a second corner vicinity is formed by the substrate processing apparatus according to claim 17 or 18, wherein is provided.

As described above, by disposing the gas inlets near both corners of the first side plate of the reaction tube main body, it is possible to reduce the turbulent flow region of the gas introduced into the reaction tube main body. In addition, the gas flow can be made laminar, and the gas replacement efficiency can be improved.

Further, according to claim 20 , the reaction tube main body is a substantially rectangular parallelepiped, and the reaction tube main body is connected to the first side.
On the opposite side of the plate, provided substantially perpendicular to the first direction
A fourth side plate, wherein the first side plate is provided with the first side plate;
Direction, and the ceiling plate and the bottom plate are in front.
The second and third side plates being substantially parallel to the first plane;
Is substantially parallel to the first direction and is on the first plane.
Substantially perpendicular, a substrate processing apparatus according to any one of claims 1 to 19, wherein the gas exhaust unit on the fourth side plate are disposed is provided.

Further, according to claim 21, the substrate processing apparatus according to any one of claims 1 to 20, characterized in that the gas heating pipe is fixed in the reaction tube body is provided.

According to a twenty-second aspect , the substrate processing apparatus according to any one of the first to twenty- first aspects is provided, wherein the substrate processing apparatus is a hot-wall type substrate processing apparatus.

In such a hot-wall type substrate processing apparatus, since the entire reaction tube main body is maintained at a predetermined temperature, the degree of freedom of the location where the gas heating tube is disposed increases.

According to a twenty- third aspect of the present invention, the reaction tube main body is a reaction tube main body having a structure for holding one or a small number of substrates to be processed. 22. A substrate processing apparatus according to any one of 22 to 22 is provided.
Preferably, one or two substrates to be processed are held in the reaction tube main body.

According to a twenty-fourth aspect, there is provided the substrate processing apparatus according to any one of the first to twenty- third aspects, wherein the substrate to be processed is a semiconductor wafer.

According to a twenty-fifth aspect of the present invention, in the hot-wall type substrate processing apparatus, the first gas introduction part and the gas exhaust part separated by a predetermined distance in a predetermined first direction; A first side plate substantially perpendicular to the direction of the first side plate having the first gas introduction portion, and a second direction substantially perpendicular to the first direction and the first direction. A reaction tube body having a ceiling plate and a bottom plate substantially parallel to the first plane, and second and third side plates substantially parallel to the first direction and substantially perpendicular to the first plane;
Heating means provided to face one or both of the ceiling plate and the bottom plate, and a substrate holder installed in the reaction tube main body, wherein the first gas introduction unit and the gas exhaust unit In the reaction tube body between the substrate to be processed,
Along the substrate holder capable of holding the main surface of the substrate to be processed substantially in parallel with the first plane, and along one or both of the second side plate and the third side plate. A gas heating pipe provided with a second gas inlet and a gas outlet, the gas outlet being connected to the first gas inlet of the reaction tube main body. A substrate processing apparatus is provided.

If the gas heating tube is provided as described above, the gas preheated by the gas heating tube is introduced into the reaction tube main body. Accordingly, the cooling of the upstream side of the substrate to be processed by the gas is suppressed, and the uniformity of the temperature distribution in the plane of the substrate to be processed is improved. As a result, the in-plane film of the film formed on the substrate to be processed The thickness uniformity, especially the film thickness uniformity in the gas flow direction is improved. Further, depending on the type of gas, the gas can be sufficiently decomposed in the gas heating means, and as a result, the film quality is improved. Further, since the gas heating tube is provided along the reaction tube main body, the size of the substrate processing apparatus can be reduced.

Further, in such a hot wall type substrate processing apparatus, since the entire reaction tube main body is kept at a predetermined temperature, the gas heating tube is connected to the second side plate and the third side plate. Even if it is arranged along one or both of them, it becomes possible to sufficiently perform preheating. And
By arranging the gas heating pipe along one or both of the second side plate and the third side plate, the height of the substrate processing apparatus is suppressed from increasing, and It is easy to make the temperature distribution in the plane uniform. In addition, since the substrate to be processed can be observed over the entire surface via the ceiling plate or the bottom plate, and the substrate mounting portion of the substrate holder can be observed over substantially the entire surface, the process of mounting the substrate to be processed on the substrate holder and the substrate to be processed can be performed. The front, rear, left, and right teaching in the first plane direction for the step of taking out the substrate from the substrate holder can be performed easily and reliably. Since teaching via the second side plate or the third side plate only needs to be performed in the vertical direction, it is only necessary to observe a part of the substrate to be processed. Therefore, even if the gas heating tube is disposed along one or both of the second side plate and the third side plate, teaching can be easily performed.

According to a twenty- sixth aspect, the substrate processing apparatus according to the twenty-fifth aspect is provided, wherein the gas heating tube is provided along the first side plate.

Further, according to claim 27, claim 25 or 26, characterized in that said heating means is provided to face at least one of said top plate and said bottom plate
A substrate processing apparatus as described above is provided. Since the gas heating pipe is disposed along one or both of the second side plate and the third side plate of the reaction tube main body, the heating means is provided on the ceiling plate or the bottom plate of the reaction tube main body in this way. If provided facing at least one, it will not be blocked by the gas heating tube,
The uniformity of the in-plane temperature distribution of the substrate to be processed is improved. Also,
According to claim 28, a ceiling plate and a bottom plate, a first gas inlet and a gas exhaust part for a predetermined distance, first to
3. A reaction tube main body comprising:
The side plate has the first gas introduction portion, and the second and third gas introduction portions are provided.
Side plates flow from the first gas inlet to the gas exhaust.
The reaction tube provided along the direction of the gas flow
And a heating means provided outside the reaction tube body.
Thus, one of the ceiling plate and the bottom plate or
A heating means provided on both sides thereof; and a substrate holder provided in the reaction tube main body , wherein the reaction tube main body is provided between the first gas introduction section and the gas exhaust section. To
A substrate holder capable of holding a substrate to be processed, and a second side plate
And one or both of the third side plates
A gas heating pipe disposed along the gas pipe, the gas heating pipe having a second gas inlet and a gas outlet, the gas outlet being in communication with the first gas inlet of the reaction tube body. A film forming method is provided, comprising a step of forming a film on the substrate to be processed using a substrate processing apparatus having the gas heating tube. According to claim 29, there is provided a hot-wall type substrate processing apparatus, comprising: a first gas introduction unit and a gas exhaust unit separated by a predetermined distance in a predetermined first direction; A first side plate having a substantially right angle and having the first gas introduction portion;
A ceiling plate and a bottom plate substantially parallel to a first plane including the first direction and a second direction substantially perpendicular to the first direction; and a first plate substantially parallel to the first direction and A reaction tube main body having second and third side plates substantially perpendicular to a plane, heating means provided facing one or both of the ceiling plate and the bottom plate, and a heating unit installed in the reaction tube main body A substrate holder, wherein the substrate to be processed is disposed in the reaction tube main body between the first gas introduction unit and the gas exhaust unit, and the main surface of the substrate to be processed is the first plane. And a second gas introduction unit and a gas outlet disposed along one or both of the second side plate and the third side plate which can be held in a state substantially parallel to the second side plate. And the gas outlet portion communicates with the first gas introduction portion of the reaction tube main body. Using a substrate processing apparatus and a said gas heating tube, the film-forming method characterized by comprising the step of forming a film on a substrate to be processed is provided.

[0049]

Next, embodiments of the present invention will be described with reference to the drawings.

(First Embodiment) FIG. 1 is a partially cutaway plan view for explaining a substrate processing apparatus according to a first embodiment of the present invention, and FIG. 3 is a partial enlarged view of a portion A in FIG. 1, FIG. 4 is a cross-sectional view along line X4-X4 in FIG. 3, and FIG.
6 and FIG. 7 are perspective views for explaining a reaction tube used in the substrate processing apparatus according to the first embodiment of the present invention.

The substrate processing apparatus 100 is a single-wafer-type substrate processing apparatus, and includes a heater 70, a reaction tube 10 provided in the heater 70, and a heat insulating material 72. Heater 70
The reaction tube 10 is covered with a heat insulating material 72 on the upper, lower, left and right sides thereof, and has a so-called hot wall type structure. The reaction tube 10 includes a reaction tube main body 20 and a gas heating tube 40.
And a reaction tube flange 26. Reaction tube body 20
Inside, a wafer mounting plate 120 is provided. A space 124 having a diameter larger than the diameter of the Si semiconductor wafer 90 is formed in the wafer mounting plate 120, and the three wafer supporting claws 1 are formed in the space 124.
A projection 22 is provided. The reaction tube main body 20 and the gas heating tube 40 are made of quartz.

The reaction tube main body 20 has a substantially rectangular parallelepiped shape, and includes a ceiling plate 21, a bottom plate 22, side plates 23 and 24,
25. The ceiling plate 21 and the bottom plate 22 are parallel to each other, and the side plates 23 and 24 are parallel to each other. The side plate 25 includes a ceiling plate 21, a bottom plate 22, a side plate 23,
At right angles to 4. The wafer mounting plate 120 is provided in the reaction tube main body 20 in parallel with the ceiling plate 21 and the bottom plate 22. One Si semiconductor wafer 90 is provided in a space 124 supported by a wafer supporting claw 122 of a wafer mounting plate 120. The surface of the Si semiconductor wafer 90 and the upper surface of the wafer mounting plate 120 are in the same plane. Si semiconductor wafer 90 is held in parallel with ceiling plate 21 and bottom plate 22.

The side plate 25 is provided with a horizontally long rectangular opening 28 at a position substantially at the same height as the semiconductor wafer 90 in parallel with the surface of the semiconductor wafer 90. The opening 28 is provided from near the corner 31 between the side plates 25 and 24 to near the corner 32 between the side plates 25 and 23.
A reaction tube flange 26 is provided on the side opposite to the side plate 25 and downstream of the reaction tube body 20, and the reaction tube flange 26 is provided with a wafer transfer port 27. The wafer transfer port 27 has a rectangular shape, and its size is substantially the same as the opening of the cross section of the reaction tube main body 20 in a direction perpendicular to the gas flow direction.

The gas heating tube 40 has a lower gas heating tube 42 and an upper gas heating tube 43. Lower gas heating tube 4
2 comprises substantially straight tubes 45, 46, 47. The upper gas heating tube 43 includes substantially straight tubes 48, 49, and 50. The tubes 45 and 50 are provided parallel to the surface of the semiconductor wafer 90 along the outside of the side plate 25, and the tubes 46 and 48 are provided parallel to the surface of the semiconductor wafer 90 along the outside of the side plate 23. Cage, tube 47
The tube 49 is provided parallel to the surface of the semiconductor wafer 90 along the outside of the side plate 24.

One end of a pipe 44 communicates with the center of the pipe 45, and the other end of the pipe 44 serves as a gas supply port 41. One end of the tube 45 communicates with one end of the tube 46, the other end of the tube 46 communicates with one end of the tube 48, and the other end of the tube 48 communicates with one end of the tube 50. The other end of the tube 45 communicates with one end of the tube 47, the other end of the tube 47 communicates with one end of the tube 49, and the other end of the tube 49 communicates with the other end of the tube 50.

In the tube 50, a plurality of gas outlets 60 are provided at a position substantially at the same height as the semiconductor wafer 90 and in a row in parallel with the surface of the semiconductor wafer 90. The plurality of gas outlets 60 are provided at the corners 31 of the side plate 25 and the side plate 24.
It is provided from the vicinity to the vicinity of the corner 32 of the side plate 25 and the side plate 23. The opening 28 provided in the side plate 25 is provided with the pipe 5
The plurality of gas outlets 60 provided on the side plate 25 are all exposed, and the plurality of gas outlets 60 communicate with the openings 28 provided on the side plate 25.

The reaction tube body 20, the gas heating tube 40, the reaction tube flange 26, the wafer transfer plate 120, the semiconductor wafer 90, the tube 44, the opening 28, the plurality of gas outlets 6
0 and the wafer transfer port 27 all have a symmetrical structure.

The gas heating tube 40 is connected to the reaction tube main body 20.
Welded to.

In a state where one semiconductor wafer 90 is held in the reaction tube main body 20, a reaction gas is supplied from the gas supply port 41 while heating with the heater 70, and the semiconductor wafer 90 is heated.
And the like.

The reaction gas supplied from the gas supply port 41 is supplied to the central portion of the pipe 45 through the pipe 44, and then branches right and left in the pipe 45 to form a lower symmetrically provided lower side. Flow into tubes 46 and 47 respectively,
After flowing through the pipes 6 and 47 respectively, the pipes are turned back and flow into the upper pipes 48 and 49 provided symmetrically to the left and right, respectively.
8 and 49, respectively, flow into both ends of the tube 50, and then through the gas outlets 60 provided in the tube 50 in a row and the opening 28 provided in the side plate 25, the reaction tube main body. 20 is introduced. The reacted gas is exhausted after passing through the wafer transfer port 27 of the flange 26.

In the present embodiment, the reaction gas is supplied into the reaction tube main body 20 after passing through the gas heating tube 40 heated by the heater 70. Therefore, the reaction gas is heated in advance by the gas heating tube 40 and the reaction tube main body 2 is heated.
Introduced in 0. As a result, the cooling of the upstream side of the semiconductor wafer 90 by the reaction gas is suppressed, and the uniformity of the temperature distribution in the plane of the semiconductor wafer 90 is improved.
The in-plane uniformity of the film thickness formed on the surface of the semiconductor wafer 90, particularly the uniformity of the film thickness in the flow direction of the reaction gas, is improved. Further, depending on the type of gas, the reaction gas can be sufficiently decomposed in the gas heating tube 40, and as a result, the film quality is improved.

Further, since the gas heating tube 40 is disposed along the side plates 23, 24, 25 of the reaction tube main body 20, the substrate processing apparatus 100 can be downsized.

The reaction tube main body 20, the gas heating tube 40, the reaction tube flange 26, the wafer transfer plate 120, the semiconductor wafer 90, the tube 44, the opening 28, the plurality of gas outlets 6
0 have a symmetrical structure, so that it is possible to maintain a temperature balance between the left and right,
It is also possible to make the flow rate of the reactant gas introduced into the chamber uniform in the right and left directions. As a result, the in-plane uniformity of the film thickness of the film formed on the surface of the semiconductor wafer 90, particularly with respect to the gas flow direction Thus, the film thickness uniformity in the left-right direction is improved.

The tube 50 is provided with a plurality of gas outlets 60 in a row in parallel with the surface of the semiconductor wafer 90, and the side plate 25 has openings 28 that expose the plurality of gas outlets 60. Is provided, the reaction gas is introduced in the form of a shower, and the flow of the reaction gas on the surface of the semiconductor wafer 90 becomes a laminar flow, thereby improving the uniformity of the film thickness. On the other hand, in the conventional reaction tube 80 shown in FIG. 15, since there is only one gas inlet 82, the gas flow on the semiconductor wafer 90 does not become laminar. The resulting film thickness becomes uneven.

The plurality of gas outlets 60 are
Since it is provided from near the corner 31 of the side plate 25 and the side plate 24 to near the corner 32 of the side plate 25 and the side plate 23, it is possible to reduce the turbulent flow region of the reaction gas introduced into the reaction tube main body 20, As a result, the gas flow can be made laminar, and the gas replacement efficiency can be improved.

Further, in such a hot wall type substrate processing apparatus, since the entire reaction tube main body 20 is maintained at a predetermined temperature, the gas heating tube 40 is connected to the side plate 23,
Even if they are arranged along 24 and 25, it is possible to sufficiently perform preheating. Then, the gas heating tube 40 is connected to the side plates 23, 2
4 and 25, the ceiling plate 21 and the bottom plate 22
Is not provided, the heater 70 provided on the ceiling plate 21 and the bottom plate 22 of the reaction tube main body 20 is not blocked by the gas heating tube 40, and as a result, the semiconductor wafer 90 Of the in-plane temperature distribution is improved.

Further, by disposing the gas heating pipe 40 along the side plates 23, 24 and 25 of the reaction tube main body 20 as described above,
The height of the substrate processing apparatus 100 is suppressed from increasing, and the temperature distribution in the plane of the semiconductor wafer 90 can be easily made uniform. On the other hand, the gas heating pipe 4
If 0 is arranged along the ceiling plate 21 and the bottom plate 22 of the reaction tube main body 20, the height of the substrate processing apparatus 100 will increase accordingly. Large number of semiconductor wafers 9 with small occupied floor space
It is considered effective to stack a plurality of the reaction tube bodies 20 in order to treat 0, but in this case, the gas heating tubes 40 are arranged along the ceiling plate 21 and the bottom plate 22 of the reaction tube body 20. If provided, the number of the reaction tube main bodies 20 that can be stacked vertically is reduced by that amount, and the number of semiconductor wafers 90 per unit occupied floor area is reduced.

When the gas heating tube 40 is arranged along the ceiling plate 21 and the bottom plate 22 of the reaction tube main body 20, the ceiling plate 21 and the bottom plate 22 are provided in parallel with the main surface of the semiconductor wafer 90. Therefore, it is difficult to make the temperature distribution in the plane of the semiconductor wafer 90 uniform unless the gas heating tubes 40 are arranged uniformly along the ceiling plate 21 and the bottom plate 22 of the reaction tube main body 20. Also, as described above, the gas heating pipe 4
In the case of a structure in which 0 is uniformly arranged along the ceiling plate 21 and the bottom plate 22 of the reaction tube main body 20, it is difficult to manufacture such a structure, and the cost is increased. On the other hand, the gas heating pipe 4
By disposing 0 along the side plates 23, 24, 25 of the reaction tube main body 20, the temperature distribution in the plane of the semiconductor wafer 90 can be easily made uniform with a simple structure.

In this embodiment, considering that the amount of gas branched to the left and right gas heating pipes is not always equal, the left and right gas heating pipes are used to reduce the difference between the left and right gas heating pipes. The tubes are joined at the end point. Further, in order not to disturb the temperature distribution in the vicinity of the semiconductor wafer 90, the gas heating pipes 40 are arranged at locations separated on both sides of the semiconductor wafer.

(Second Embodiment) FIG. 1 is a partially cutaway plan view for explaining a substrate processing apparatus according to a second embodiment of the present invention, and FIG. 2 is a sectional view taken along line X2-X2 of FIG. 8 to 10 are views for explaining the second embodiment of the present invention, FIG. 8 is a partially enlarged view of a portion A in FIG. 1, and FIG. 8 is a sectional view taken along line X9-X9 of FIG. 8, and FIG. 10 is a sectional view taken along line X10-X10 of FIG.

In the first embodiment described above, a plurality of gas outlets 60 are provided in the tube 50 of the gas heating tube 40, and the openings exposing the plurality of gas outlets 60 are provided in the side plate 25 of the reaction tube main body 20. Although the portion 28 is provided, in the present embodiment, a plurality of gas inlets 128 are formed in the side plate 25 of the reaction tube main body 20 at a position substantially at the same height as the semiconductor wafer 90 and in a row in parallel with the surface of the semiconductor wafer 90. The present embodiment differs from the first embodiment in that the tube 50 is provided with a horizontally long opening 160 communicating with the plurality of gas inlets 128, but the other points are the same.

Also in the present embodiment, the reaction gas is supplied into the reaction tube main body 20 after passing through the gas heating tube 40 heated by the heater 70. Therefore, the reaction gas is heated in advance by the gas heating tube 40 and the reaction tube main body 2 is heated.
Introduced in 0. As a result, the cooling of the upstream side of the semiconductor wafer 90 by the reaction gas is suppressed, and the uniformity of the temperature distribution in the plane of the semiconductor wafer 90 is improved.
The in-plane uniformity of the thickness of the film formed on the surface of the semiconductor wafer 90, particularly the uniformity of the thickness in the flow direction of the reaction gas, is improved. Further, depending on the type of gas, the reaction gas can be sufficiently decomposed in the gas heating tube 40, and as a result, the film quality is improved.

Further, since the gas heating tube 40 is provided along the side plates 23, 24, 25 of the reaction tube main body 20, the size of the substrate processing apparatus 100 can be reduced.

The plurality of gas inlets 128 are
It is provided from near the corner 31 of the side plate 24 and the side plate 25 to near the corner 32 of the side plate 23 and the side plate 25. Further, the reaction tube main body 20, the gas heating tube 40, the reaction tube flange 26,
The wafer mounting plate 120, the semiconductor wafer 90, the tube 44, the opening 160, the plurality of gas inlets 128, and the wafer transfer port 27 all have a symmetrical structure.

The reaction tube body 20, the gas heating tube 40, the reaction tube flange 26, the wafer mounting plate 120, the semiconductor wafer 90, the tube 44, the opening 160, and the plurality of gas inlets 128 all have a symmetrical structure. As a result, the temperature balance between the left and right sides can be maintained, and the flow rate of the reaction gas introduced into the reaction tube main body 20 can be equalized on the left and right sides. As a result, the reaction gas can be formed on the surface of the semiconductor wafer 90. The in-plane uniformity of the film thickness to be formed, particularly, the film thickness uniformity in the left-right direction with respect to the gas flow direction is improved.

The side plate 25 has a semiconductor wafer 90
A plurality of gas inlets 128 are provided in a row in parallel with the surface of the tube, and an opening 160 communicating with the plurality of gas inlets 128 is provided in the pipe 50. The flow of the reactant gas introduced on the surface of the semiconductor wafer 90 becomes a laminar flow, and the uniformity of the film thickness is improved.

The plurality of gas inlets 128
Are located near the corner 31 between the side plate 25 and the side plate 24.
Is provided up to the vicinity of the corner portion 32 between the
The turbulence region of the reaction gas introduced into the reaction tube main body 20 can be reduced, and as a result, the gas flow can be made laminar and the gas replacement efficiency can be improved.

(Third Embodiment) FIG. 11 is a plan view for explaining a substrate processing apparatus according to a third embodiment of the present invention, in which a semiconductor wafer is mounted on a wafer mounting plate. FIG. 12 is a diagram showing the state of X12-X in FIG.
FIG. 12 is a sectional view taken along line 12 and showing a state before the semiconductor wafer is mounted on the wafer mounting plate;
FIG. 4 is a perspective view for explaining a reaction tube used in the substrate processing apparatus according to the third embodiment of the present invention.

In the above-described first embodiment, the gas heating tube 40 is extended by extending the tip 401 of the gas heating tube 40 near the reaction tube flange 26 beyond the semiconductor wafer 90 and the wafer mounting plate 120. Side plate 2 of pipe body 20
In the present embodiment, the gas heating tube 40 is folded back on the near side of the center of the semiconductor wafer 90 so as to be folded along the side plates 23 and 24 of the reaction tube main body 20. The points provided are different from those in the first embodiment, but the other points are the same.

The semiconductor wafer 90 is mounted on the tweezers 130, carried into the reaction tube body 20, mounted on the wafer supporting claws 122 of the wafer mounting plate 120, and provided in the space 124. Further, the semiconductor wafer 90 mounted on the wafer mounting plate 120 is mounted on the tweezers 130 and carried out of the reaction tube 10. At this time, teaching is performed to determine the position and operation range of the tweezers 130 for transporting the semiconductor wafer 90. At the time of teaching, the heat insulating material 72 and the heater 70 are removed. Then, the clearance in the front, rear, left and right is checked from above the reaction tube 10 via the ceiling plate 21. A check in the height direction is performed from the side of the reaction tube 10 via the side plates 23 and / or 24. As a check item in the height direction, when the tweezer 130 on which the semiconductor wafer 90 is mounted passes over the wafer mounting plate 120, the wafer transfer plate 12 is so arranged that the wafer mounting plate 120 and the semiconductor wafer 90 do not interfere with each other.
Checking the height to ensure a height of 0 and the tweezer 130
There is a vertical stroke when the semiconductor wafer 90 mounted on the wafer is lowered and mounted on the wafer transfer plate 120.

In this embodiment, when the reaction tube main body 20 is viewed from the side plate 23 or 24, the semiconductor wafer 90
Can be observed more than half, and the wafer mounting plate 12
0 can be observed from one end 121 to a region beyond the center of the space 124 where the semiconductor wafer 90 is provided. Therefore, the teaching can be easily performed because the semiconductor wafer 90 and the wafer transfer plate 120 can be sufficiently observed when performing the teaching.

In order to perform the above teaching, when the reaction tube main body 20 is viewed from the side plate 23 or 24, at least one end 121 of the wafer mounting plate 120 to one end 91 of the semiconductor wafer 90 is required. It is preferable to be able to observe, and when the reaction tube 10 is viewed from the side plate 23 or 24, at least half of the semiconductor wafer 90 can be observed, and the wafer mounting plate 120 also has a space 1 where the semiconductor wafer 90 is provided from one end 121 thereof.
It is more preferable that at least the central part of 24 can be observed. Therefore, the gas heating tube 40 is connected to the semiconductor wafer 90.
The reaction tube main body 2 is folded back in front of one end 91 of the reaction tube.
0 is preferably provided along the side plates 23 and 24, and further, the gas heating tube 40 is folded back near the center of the semiconductor wafer 90 or near the center of the semiconductor wafer 90 to be attached to the side plates 23 and 24 of the reaction tube main body 20. It is more preferable to provide along.

In this embodiment, the length of the gas heating tube 40 is shorter than that of the first embodiment. The length until reaching 52 is 240 mm or more, and the corner 5 through the tubes 47 and 49 from the center 451 of the tube 45
Since the length up to 1 is 240 mm or more,
The temperature of the reaction gas led out from the gas outlet 60 provided in the vicinity of the corners 52 (32) and 51 (31) is sufficiently high until the temperature in the reaction tube main body 20 becomes the same. Therefore, also in the present embodiment, the reaction gas is sufficiently heated in advance by the gas heating tube 40 and introduced into the reaction tube main body 20. As a result, the upstream side of the semiconductor wafer 90 is suppressed from being cooled by the reaction gas, the uniformity of the temperature distribution in the plane of the semiconductor wafer 90 is improved, and the thickness of the film formed on the surface of the semiconductor wafer 90 is increased. , In particular, the film thickness uniformity in the flow direction of the reaction gas is improved. Further, depending on the type of gas, the reaction gas can be sufficiently decomposed in the gas heating tube 40, and as a result, the film quality is improved.

Further, since the gas heating tube 40 has a folded structure, the gas heating tube 40 is connected to the side plate 23 of the reaction tube main body 20 while ensuring a sufficient length of the reaction gas path flowing through the gas heating tube 40. The length of the region provided along 24 can be reduced. Therefore, the reaction gas can be sufficiently pre-heated by the gas heating tube 40, and the side plates 23, 2, 2
The area in which the inside of the reaction tube main body 20 can be observed through 4 can be increased.

Further, since the gas heating pipes 40 are arranged along the side plates 23 and 24 and are not provided along the ceiling plate 21 and the bottom plate 22, the semiconductor wafer 90 is entirely formed via the ceiling plate 21 or the bottom plate 22. Since the space 124 of the wafer mounting plate 120 and the wafer supporting claws 122 can be observed over the entire surface, the process of mounting the semiconductor wafer 90 on the wafer mounting plate 120 and the removal of the semiconductor wafer 90 from the wafer mounting plate 120 are performed. Teaching in the front, rear, left, and right directions in the horizontal direction for the process can be easily and reliably performed. In this way, the front, rear, left and right teaching in the horizontal direction can be performed by observing through the ceiling plate 21 or the bottom plate 22.
Teaching via the side plate 23 or 24 only needs to be performed in the vertical direction. For that purpose, it is not necessary to observe the entire semiconductor wafer 90, but it is possible to observe a part of the semiconductor wafer 90. At this time, if about half or more than half of the semiconductor wafer 90 and about half or more than half of the space 124 of the wafer mounting plate 120 can be observed as in the present embodiment, the semiconductor wafer 90 is mounted on the wafer mounting plate 120. Teaching for the process and the process of removing the semiconductor wafer 90 from the wafer mounting plate 120 can be performed more easily and reliably.

The gas heating tube 40 is connected to the side plate 2 of the reaction tube main body 20.
The gas heating tubes 40 are arranged along 3, 24, 25, and are welded to the reaction tube main body 20. A plurality of gas outlets 60 are formed in the pipe 50 at corners 31 (5) of the side plate 24 and the side plate 25.
1) From the vicinity, the corner 32 (52) of the side plate 23 and the side plate 25
It is provided in a line parallel to the surface of the semiconductor wafer 90 up to the vicinity. The side plate 25 has a plurality of these gas outlets 60.
There is provided an opening 28 communicating with the opening. Reaction tube body 2
0, gas heating tube 40, reaction tube flange 26, wafer mounting plate 120, semiconductor wafer 90, tube 44, opening 28, plural gas outlets 60 and wafer transfer port 2
7 have a symmetrical structure.

In the first and third embodiments, a plurality of gas outlets 60 are provided in the tube 50 of the gas heating tube 40, and the plurality of gas outlets 60 are provided in the side plate 25 of the reaction tube main body 20. In the second embodiment, a plurality of gas inlets 128 are provided in the side plate 25 of the reaction tube main body 20, and the gas heating pipes are provided in the second embodiment. An opening 160 communicating with the plurality of gas inlets 128 is provided in the tube 50 of the gas heating tube 40.
A plurality of gas outlets are provided in a row at approximately the same height as that of the semiconductor wafer 90 in parallel with the surface of the semiconductor wafer 90, and the side plates 25 of the reaction tube main body 20 correspond to and communicate with these gas outlets, respectively. A plurality of gas inlets may be provided. Also in this case, the reaction tube main body 20 and the gas heating tube 4
0, reaction tube flange 26, wafer mounting plate 12
0, semiconductor wafer 90, tube 44, multiple gas outlets,
The plurality of gas inlets and the wafer outlet 27 are all symmetrical.

In the first to third embodiments,
Although a single-wafer-type substrate processing apparatus in which one semiconductor wafer 90 is held in the reaction tube body 20, the present invention holds a small number, preferably two, of the semiconductor wafers 90 in the reaction tube body 20. It can be preferably applied to a substrate processing apparatus to be performed.

[0089]

According to the present invention, by providing the gas heating means, a preheated gas is introduced into the reaction tube main body. Accordingly, the cooling of the upstream side of the substrate to be processed by the gas is suppressed, and the uniformity of the temperature distribution in the plane of the substrate to be processed is improved. As a result, the thickness of the film formed on the substrate to be processed is reduced. In-plane uniformity, in particular, film thickness uniformity in the gas flow direction is improved. Further, depending on the type of gas, the gas can be sufficiently decomposed in the gas heating means, and as a result, the film quality is improved.

Further, by disposing the gas heating tube along the reaction tube main body, the size of the substrate processing apparatus can be reduced.

Further, by forming the gas heating tube into a folded structure, the length of the region where the gas heating tube is provided along the reaction tube main body can be shortened, and the reaction tube main body is not obstructed by that much. Thus, the area in which the inside of the reaction tube main body can be observed increases, and teaching or the like can be easily performed.

Further, in the hot-wall type substrate processing apparatus, the gas heating pipe is provided along one or both of the second side plate and the third side plate, so that the gas heating pipe can be sufficiently provided. Preheating can be performed, the height of the substrate processing apparatus can be prevented from increasing, and the temperature distribution in the surface of the substrate to be processed can be easily made uniform. In addition, the substrate to be processed can be observed over the entire surface via the ceiling plate or the bottom plate, and the substrate mounting portion of the substrate holder can be observed over almost the entire surface. The front, rear, left and right teaching in the horizontal direction for the step of taking out the substrate from the substrate holder can be performed easily and reliably. Since teaching via the second side plate or the third side plate only needs to be performed in the up-down direction, the gas heating pipe is arranged along one or both of the second side plate and the third side plate. Even if they are arranged, teaching can be performed easily.

[Brief description of the drawings]

FIG. 1 is a partially cutaway plan view illustrating a substrate processing apparatus according to first and second embodiments of the present invention.

FIG. 2 is a sectional view taken along line X2-X2 of FIG.

FIG. 3 is a partially enlarged view of a portion A in FIG. 1;

FIG. 4 is a sectional view taken along line X4-X4 of FIG. 3;

FIG. 5 is a sectional view taken along line X5-X5 in FIG. 3;

FIG. 6 is a perspective view for explaining a reaction tube used in the substrate processing apparatus according to the first embodiment of the present invention.

FIG. 7 is a perspective view for explaining a reaction tube used in the substrate processing apparatus according to the first embodiment of the present invention.

FIG. 8 is a diagram for explaining a reaction tube used in the substrate processing apparatus according to the second embodiment of the present invention, and is a partially enlarged view of a portion A in FIG.

9 is a sectional view taken along line X9-X9 in FIG.

FIG. 10 is a sectional view taken along line X10-X10 in FIG. 8;

FIG. 11 is a plan view for explaining a substrate processing apparatus according to a third embodiment of the present invention, showing a state where a semiconductor wafer is mounted on a wafer mounting plate.

12 is a sectional view taken along line X12-X12 in FIG. 11, showing a state before the semiconductor wafer is mounted on a wafer mounting plate.

FIG. 13 is a perspective view illustrating a reaction tube used in a substrate processing apparatus according to a third embodiment of the present invention.

FIG. 14 is a perspective view for explaining a reaction tube used in a substrate processing apparatus according to a third embodiment of the present invention.

FIG. 15 is a plan view for explaining a reaction tube used in a conventional substrate processing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Reaction tube 20 ... Reaction tube main body 21 ... Ceiling plate 22 ... Bottom plate 23, 24, 25 ... Side plate 26 ... Reaction tube flange 27 ... Wafer carrying port 28, 160 ... Opening 31, 32, 51, 52 ... Corner 40 ... gas heating pipe 41 ... gas supply port 42 ... lower gas heating pipe 43 ... upper gas heating pipe 44 to 50 ... pipe 60 ... gas outlet 70 ... heater 72 ... heat insulating material 90 ... Si semiconductor wafer 100 ... semiconductor manufacturing equipment 120 ... Wafer mounting plate 122 ... Wafer supporting claws 128 ... Gas inlet 130 ... Tweezer

Continuation of front page (56) References JP-A-7-94419 (JP, A) JP-A-7-326588 (JP, A) JP-A-5-21366 (JP, A) JP-A-5-93274 (JP) JP-A-60-112694 (JP, A) JP-A-7-37894 (JP, A) JP-A-56-21439 (JP, U) JP-A-2-106822 (JP, U) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 21/205 C23C 16/44 H01L 21/22 501 H01L 21/31

Claims (29)

(57) [Claims] 1. A reaction tube main body comprising a ceiling plate and a bottom plate, a first gas introduction unit and a gas exhaust unit separated from each other by a predetermined distance, and first to third side plates . A side plate having the first gas introduction portion,
2. The third side plate is provided with the gas from the first gas inlet.
Before provided along the direction of gas flow to the exhaust
The reaction tube body, and heating means provided outside the reaction tube body,
To one or both of the ceiling plate and the bottom plate
The heating means provided to face, and a substrate holder installed in the reaction tube body, wherein the reaction tube body between the first gas introduction unit and the gas exhaust unit, The substrate holder capable of holding a substrate to be processed, and one of a second side plate and a third side plate
Or a gas heating pipe arranged along both of the gas heating pipes, the gas heating pipe having a second gas introduction part and a gas derivation part, wherein the gas derivation part communicates with the first gas introduction part of the reaction tube main body. And a gas heating tube. 2. The method according to claim 1, wherein the first gas introduction unit and the gas exhaust unit are separated by a predetermined distance in a predetermined first direction, and the substrate holder holds the substrate to be processed in the predetermined direction. A second surface perpendicular to the first direction and the first direction is formed on the main surface of the processing substrate.
And the gas heating tube can be held in a state substantially parallel to a first plane including the direction of the gas, and the gas flowing through the gas heating tube is first moved from the first gas introduction unit side to the gas exhaust unit side. 2. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus has a structure that flows toward the first gas introduction unit from the gas exhaust unit after turning back. 3. The reaction tube main body has a structure which is substantially symmetrical in the second direction with respect to a predetermined center line in the first direction, and wherein the substrate holder is provided with respect to the center line. The substrate has a substantially symmetrical structure in the second direction, and can hold the substrate to be processed substantially symmetrically in the second direction with respect to the center line. 3. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus has a structure which is substantially bilaterally symmetric with respect to a line in the second direction. 4. The apparatus according to claim 1, wherein said first side plate is substantially perpendicular to said first direction.
A corner, wherein the ceiling plate and the bottom plate are in the first plane
And the second and third side plates are substantially parallel to the first
And substantially perpendicular to the first plane.
In the gas heating tube, the gas flowing in the gas heating tube first flows substantially linearly from the first gas introduction unit side to the gas exhaust unit side, and then turns back to return to the gas exhaust unit side. The substrate processing apparatus according to any one of claims 1 to 3, wherein the substrate processing apparatus has a structure that flows substantially linearly toward the first gas introduction unit side. 5. The gas heating tube according to claim 1 , wherein the first side plate and the first side plate are connected to each other.
Along the second side plate and the third side plate,
5. The substrate processing apparatus according to claim 4, wherein: 6. The gas heating pipe flows through the gas heating pipe.
Gas to be exhausted from the first gas introduction section side
Toward the second side plate and the third side plate
Flow along each, then turn back to the gas exhaust
Again from the side toward the first gas introduction section side.
Flow along the side plate and the third side plate, respectively.
After, the substrate processing apparatus according to claim 5, characterized in that have a structure that flows along the first side plate. 7. The gas heating pipe according to claim 1, wherein a gas flowing through the gas heating pipe is first moved along the first side plate along the first side.
The second side from a substantially central portion of the plate in the second direction;
Flow toward the plate and said third side plate, respectively,
Thereafter, the gas flows along the second side plate and the third side plate from the first gas introduction portion side to the gas exhaust portion side, and then turns back to introduce the first gas from the gas exhaust portion side. 7. The structure according to claim 6, wherein the structure has a structure that flows along the second side plate and the third side plate again toward the part side, and then flows along the first side plate. Substrate processing equipment. 8. The gas heating tube extends along the second side plate.
First and second tubes disposed in the first direction.
A third side plate disposed in the first direction along the third side plate.
Third and fourth tubes and the second tube along the first side plate.
And a gas introduction pipe, wherein the gas introduction pipe is connected to one end of the first pipe and the third pipe.
And one end of the first tube is connected to the other end of the first tube.
The other end of the third tube communicates with one end of the second tube.
The other end of the second tube communicates with one end of the fourth tube.
Communicates with one end of the fifth tube and the other end of the fourth tube
Portion communicates with the other end of the fifth tube, and the fifth tube
Having the gas outlet communicating with the first gas inlet.
The substrate processing apparatus according to claim 1, wherein: 9. The gas heating tube extends along the first side plate.
And a sixth pipe disposed in the second direction, wherein the gas introduction pipe is connected to the first pipe via the sixth pipe.
Communicating with the one end and the one end of the third tube together
9. The substrate processing apparatus according to claim 8 , wherein the processing is performed. Wherein said gas heating tube, the first gas introduction
Extending toward the gas exhaust unit from the
Turned back on the front side of the end of the processing board on the gas exhaust side
From the gas exhaust unit side to the first gas introduction unit side.
Claims characterized by having an extending structure
Item 10. The substrate processing apparatus according to any one of Items 1 to 9 . 11. The gas heating pipe extends from the first gas introduction section toward the gas exhaust section, and is folded near a central portion of the substrate to be processed or nearer to the central portion than the central portion. The substrate processing apparatus according to claim 10 , further comprising a structure extending from the gas exhaust unit side toward the first gas introduction unit side. 12. The apparatus according to claim 11, wherein said first side plate is substantially in said first direction.
A right angle, wherein the ceiling plate and the bottom plate are the first flat plate.
Substantially parallel to the plane, and the second and third side plates are
A direction substantially parallel to the first direction and substantially perpendicular to the first plane.
The gas heating tube is provided with the second side plate and the third side;
Claims characterized by being arranged along both of the plates
Item 12. The substrate processing apparatus according to item 10 or 11 . 13. The apparatus according to claim 1, wherein said first side plate is substantially in said first direction.
A right angle, wherein the ceiling plate and the bottom plate are the first flat plate.
Substantially parallel to the plane, and the second and third side plates are
A direction substantially parallel to the first direction and substantially perpendicular to the first plane.
And the gas outlet of the gas heating tube extends along the first side plate.
The gas outlet is in the second direction
Has multiple gas outlets provided almost in parallel to
The substrate processing apparatus according to claim 1, wherein: 14. The reaction tube main body according to claim 1, wherein
Substantially in the second direction with respect to the center line of
Having a symmetrical structure, wherein the substrate holder is in the second direction with respect to the center line.
Has a substantially symmetrical structure and
The substrate in the second direction with respect to the center line.
The gas heating tube can be held symmetrically in the second direction with respect to the center line.
And the gas outlets are substantially symmetrical with respect to the center line.
That they are arranged substantially symmetrically in the direction
The substrate processing apparatus according to claim 13, wherein: 15. The system according to claim 15, wherein the plurality of gas outlets are connected to the first side.
Near a first corner formed by a plate and the second side plate
Formed by the first side plate and the third side plate
Characterized in that it is disposed to the vicinity of the second corner portion
The substrate processing apparatus according to claim 13 . 16. The first gas inlet of the reaction tube main body.
Are openings provided in the first side plate, and
Having the openings exposing a number of gas outlets
The substrate processing apparatus according to claim 13, wherein: 17. The apparatus according to claim 17, wherein the first side plate is substantially in the first direction.
A right angle, wherein the ceiling plate and the bottom plate are the first flat plate.
Substantially parallel to the plane, and the second and third side plates are
A direction substantially parallel to the first direction and substantially perpendicular to the first plane.
And the first gas introduction part is provided on the first side plate in the second direction.
It has a plurality of gas inlets provided almost parallel to
The substrate processing apparatus according to any one of claims 1 to 15, wherein: 18. The method according to claim 18, wherein the reaction tube main body is provided in a predetermined direction in the first direction.
Substantially in the second direction with respect to the center line of
Having a symmetrical structure, wherein the substrate holder is in the second direction with respect to the center line.
Has a substantially symmetrical structure and
The substrate in the second direction with respect to the center line.
The gas heating tube can be held symmetrically in the second direction with respect to the center line.
The gas inlets are substantially symmetrical with respect to the center line.
That they are arranged substantially symmetrically in the direction
The substrate processing apparatus according to claim 17, wherein: 19. The method according to claim 19, wherein the plurality of gas inlets are connected to the first side.
Near a first corner formed by a plate and the second side plate
Formed by the first side plate and the third side plate
Characterized in that it is disposed to the vicinity of the second corner portion
The substrate processing apparatus according to claim 17 . 20. The reaction tube main body is a substantially rectangular parallelepiped, and the reaction tube main body is provided on a side opposite to the first side plate.
A fourth side plate provided substantially at right angles to the direction of FIG.
And wherein the first side plate is substantially perpendicular to the first direction;
The ceiling plate and the bottom plate are substantially parallel to the first plane.
And the second and third side plates are substantially in the first direction.
Being parallel and substantially perpendicular to the first plane, the fourth side plate being provided with the gas exhaust portion
20. The substrate processing apparatus according to claim 1, wherein: 21. The gas heating tube is fixed to the reaction tube main body.
The substrate processing apparatus according to any one of claims 1 to 20, characterized in that it is. 22. A hot-wall type substrate processing apparatus, comprising :
22. A substrate processing apparatus, comprising: a substrate processing apparatus;
A substrate processing apparatus according to any one of the above. 23. One or a small number of the reaction tube bodies
23. The substrate processing apparatus according to claim 1 , wherein the substrate is a reaction tube main body having a structure for holding the substrate to be processed. 24. The substrate processing apparatus according to claim 1, wherein said substrate to be processed is a semiconductor wafer . 25. A hot-wall type substrate processing apparatus.
A first gas that is separated by a predetermined distance in a predetermined first direction.
A gas introduction part, a gas exhaust part, and a first side plate substantially perpendicular to the first direction.
A first side plate having a first gas introduction portion, and a second side plate substantially perpendicular to the first direction and the first direction.
Ceiling and bottom plates substantially parallel to a first plane including
And substantially parallel to the first direction and substantially parallel to the first plane.
A reaction tube body having vertical second and third side plates, and facing one or both of the ceiling plate and the bottom plate
And heating means provided in the reaction tube body,
The reaction between the first gas inlet and the gas outlet.
The substrate to be processed is placed inside the tube body with the main surface of the substrate to be processed facing forward.
The substrate holder capable of being held substantially in parallel with the first plane.
Holder and any one of the second side plate and the third side plate
Arranged along one or both, with a second gas inlet and
A gas outlet portion, wherein the gas outlet portion is the reaction tube main body.
A substrate processing apparatus for a gas heating tube communicating with the first gas inlet of, comprising: a. 26. The gas heating pipe according to claim 26, wherein said gas heating pipe extends along said first side plate.
The substrate processing apparatus according to claim 25, wherein the substrate processing apparatus is disposed . 27. The heating device according to claim 27, wherein the heating means includes the ceiling plate and the bottom.
26. The device according to claim 25, wherein the device is provided facing the plate.
27. The substrate processing apparatus according to 26 . 28. A first gas introduction unit and a gas exhaust unit which are separated from a ceiling plate and a bottom plate by a predetermined distance.
And a first to third side plate, wherein the first side plate has the first gas introduction portion,
2. The third side plate is provided with the gas from the first gas inlet.
Before provided along the direction of gas flow to the exhaust
The reaction tube body, and heating means provided outside the reaction tube body,
To one or both of the ceiling plate and the bottom plate
The heating means provided facing the substrate holding device installed in the reaction tube body,
The reaction between the first gas inlet and the gas outlet.
In the pipe main body, capable of holding the target substrate that the substrate holder
And one of the second side plate and the third side plate
Or gas heating tubes arranged along both,
2 having a gas inlet and a gas outlet, wherein the gas outlet is
Communicating with the first gas inlet of the reaction tube body
The gas heating tube, and, using a substrate processing apparatus comprising , comprising a step of forming a film on the substrate to be processed,
Film forming method. 29. A hot-wall type substrate processing apparatus.
A first gas that is separated by a predetermined distance in a predetermined first direction.
A gas introduction part, a gas exhaust part, and a first side plate substantially perpendicular to the first direction.
A first side plate having a first gas introduction portion, and a second side plate substantially perpendicular to the first direction and the first direction.
Ceiling and bottom plates substantially parallel to a first plane including
And substantially parallel to the first direction and substantially parallel to the first plane.
A reaction tube body having vertical second and third side plates, and facing one or both of the ceiling plate and the bottom plate
And heating means provided in the reaction tube body,
The reaction between the first gas inlet and the gas outlet.
The substrate to be processed is placed inside the tube body with the main surface of the substrate to be processed facing forward.
The substrate holder capable of being held substantially in parallel with the first plane.
Holder and any one of the second side plate and the third side plate
Arranged along one or both, with a second gas inlet and
A gas outlet portion, wherein the gas outlet portion is the reaction tube main body.
Forming a film on the substrate to be processed by using a substrate processing apparatus including: a gas heating pipe communicating with the first gas introduction unit .