JP3202297B2 - Storage type image forming apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image display, and more particularly to a storage type image forming apparatus using an electron beam generator.

[0002]

2. Description of the Related Art In recent years, with the rapid progress of image processing technology, a demand for a device for displaying a large capacity image has been increased. Conventionally, as a device for displaying such a large-capacity image, for example, a storage-type display device as shown in FIGS. 12 and 13 is known.

FIG. 12 is a diagram showing a Tonotron,
FIG. 13 shows a schematic configuration diagram of a memotron. In these figures, 121 is a recording electron gun, 12
2 is a deflection electrode, 123 is a deflection coil, 124 is a target network, 125 is a secondary electron collector which is an electrode for capturing secondary electrons from the target network 124 and providing a return path, and 129 traps ions in the apparatus. This is an ion trap. The electron beam emitted from the recording electron gun 121 is deflected by the deflecting electrode 122 or the deflecting coil 123 according to the image information, and reaches the target network 124. The target net 124 is formed of a fine metal mesh of 100 to 500 / inch, and glassy silica or magnesium fluoride is deposited on the electron gun side to a thickness of several μm. When hit, secondary electrons are emitted, and the secondary electrons are captured by the secondary electron collector 125 to be positively charged. The amount of charge accumulated by this charging corresponds to image information. That is, image information is stored in the amount of positive charges.

When this image information is displayed on the fluorescent screen 126, an electron beam is emitted from a floodgun 127 and is radiated to the entire surface of the target network 124 by a collimator lens 128. The electron beam passes through the positively charged portion of the target network 124 and is blocked at other portions. The passed electron beam hits the phosphor screen 126, and the phosphor applied to the inner surface of the screen emits light.

[0005]

However, in the above conventional example, the recording electron gun 12 is used for recording and for displaying, respectively.
1, different electron guns such as a flood gun 127 are used, and each has an electron optical system. That is, since the structure becomes extremely complicated, it is difficult to increase the density, the device itself becomes large, and the manufacturing cost is high.

In addition , since the flat gun 127 is configured to irradiate the entire surface of the target network 124, partial erasure cannot be performed. Even when only a part of the display image is rewritten, the entire surface must be erased once. There is the inconvenience of having to do it.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned prior art, and has as its object to provide a storage type image display device which does not require a complicated electron optical system, is capable of high density, and can be partially erased. It is assumed that.

[0008]

In order to achieve the above object, a storage type image forming apparatus according to the present invention comprises a plurality of electron-emitting devices which emit electrons according to image information, and stores image information by irradiating the electrons. Then, according to the image information, an image information accumulating means for modulating electrons newly irradiated from the electron-emitting device, and receiving the electron beam modulated by the image information accumulating means, responding to the image information A storage-type image forming apparatus having an image forming unit for forming an image;
The electron-emitting device is provided between opposing electrodes and between the electrodes.
Electron emitting part, and a voltage is applied between the electrodes.
A table that emits electrons from the electron-emitting section when a current flows
A surface conduction electron-emitting device, wherein the element for driving the electron-emitting device is
The child drive means is in a write mode for storing the image information.
In the erase mode for erasing stored information,
The electrons emitted from the electron-emitting device are stored in the image information storage means.
According to the stored image information
At the time of the display mode for forming an image,
The emitted electrons are stored in the image information storage means.
So as to impinge on the image forming means through a child passage hole,
A voltage whose polarity has been switched is applied to the electron-emitting device.
It is characterized by the following .

In a preferred embodiment, the plurality of electron-emitting devices are regularly arranged in a line, a plane, or a matrix, and the image information storage means stores image information as an amount of electric charge. Electron passing holes are provided at the same pitch at positions opposite to each other, and the image forming means forms an image corresponding to the emission image information by irradiation with an electron beam. Further, there is a case where a recording medium on which an image is recorded by this light emission and a supporting means therefor are provided.

Further, the electron-emitting device is disposed at the center.
On the first element electrode and on both sides of the first element electrode
The second and third element electrodes arranged and the first element electrode;
Between the electrode and the second element electrode and between the first element electrode and the third element electrode.
First and second electrodes respectively formed between device electrodes.
Element driving means, wherein the element driving means includes
In the loading and erasing modes, the first device electrode is connected to the
A voltage having a polarity higher than the second and third element electrodes.
Is applied between the device electrodes, and in the display mode, the
The first element electrode has a lower voltage than the second and third element electrodes.
A voltage having a polarity to be applied is applied between the device electrodes.

Hereinafter, a more specific description will be given. A first major feature of the present invention is that the electron beam generator is formed from a plurality of identical electron-emitting devices.

FIG. 1 is a basic configuration diagram illustrating a storage type image forming apparatus of the present invention. In the figure, reference numeral 11 denotes an electron beam generator in which a plurality of electron-emitting devices that emit electrons according to image information are arranged. Reference numeral 12 denotes a secondary collector, and 13 denotes a target for accumulating image information. These targets accumulate image information by irradiating electrons from the electron beam generator 11, and newly accumulate from the electron-emitting device according to the image information. It constitutes image information storage means for modulating the emitted electrons.
Reference numeral 14 denotes an image forming unit that forms an image using the modulated electron beam.

[0013]In the present invention,Electron-emitting device,heatcathode
andCold cathodeAmong them, a cold cathode is used. this is,Hot cathode
PlaceIfEmission efficiency and response speed due to thermal diffusion to the substrate
Decrease in degreeThat's why. Also, Surface conduction type
Cold cathodes for output devices, semiconductor electron-emitting devices, etc.inBut the surface biography
Using an electron-emitting device called a conduction type emission deviceYou. this
Has a simple structure that provides high electron emission efficiency.
Therefore, the device structure of the present invention is possible and the production is easy.
It is easy to arrange and form many devices on the same substrate.
Faster response speed, better brightness contrast
Have such advantages asIs from.

The surface conduction electron-emitting device is, for example, M.M.
A cold cathode device [Radio Engineering, Inc.] announced by MI Elinson et al.
Electron Physis (Radio Eng.
Electron. Phys. ) Volume 10, 1290
, P. 1296, 1965], in which a small area thin film (electron emitting portion) formed between electrodes (device electrodes) provided on the surface of a substrate is applied with a voltage between the electrodes (device electrodes). A device that emits electrons by applying a current in parallel with the film surface by applying a current. The device uses an SnO ₂ (Sb) thin film developed by Elinson et al., And also uses an Au thin film [G. : “Sin Solid
Films "(G. Dittmer:" Thin S
Solid Films "), 9, 317, (1972).
Year)], using ITO thin film [M. Hartwell
And CJ Fonstad "I E
"E.E.Trans.E.D.Conf" (M.
Hartwell and C.M. G. FIG. Fonstad:
"IEEE Trans. ED Conf.") 519
, (1975)], using a carbon thin film [Hisashi Araki et al .: "Vacuum", Vol. 26, No. 1, p. 22, p.
3 years)]. In addition to the above, the surface conduction electron-emitting device used in the present invention may have an electron emission portion formed by dispersion of metal fine particles. As a preferred form of the surface conduction electron-emitting device, the thin film (electron emission portion) has a sheet resistance of 10 ³ to 10 ⁹ Ω.
/ □, and the electrode spacing is 0.01 to 100Ωμ.
m.

FIG. 2 is a cross-sectional view illustrating one electron-emitting device portion of the electron beam generator 11. In the figure, 2
2 is a high potential side device electrode, 23 is a low potential side device electrode, 24
Denotes an electron emitting portion, and these constitute an electron emitting element 26. Reference numeral 21 denotes an insulating substrate, and an arrow 25 denotes a trajectory of the electron beam emitting element.

Another advantage of using a surface conduction electron-emitting device as an electron-emitting device is that, as shown in FIG. 2, in a surface conduction electron-emitting device, an electron is emitted from an electron-emitting portion 24 formed on electrodes 22 and 23. Since the electrons to be obtained fly with a velocity component toward the positive electrode 22 when voltage is applied, the trajectory 25 of the electron beam is largely deflected toward the positive electrode 22 with respect to the vertical direction. The use of an electron-emitting device having a large degree of deflection of the electron trajectory in the horizontal direction is a particularly preferable embodiment of the present invention as described later. Also,
The surface conduction electron-emitting device can be miniaturized, and by forming it by a process such as electron beam lithography, it is easy to arrange a plurality of devices with high positional accuracy and high density. For example, as shown in FIG. 3, if it is developed in a plane, it is possible to drive a plurality of pieces simultaneously or independently. In FIG. 3, reference numeral 32 denotes a wiring electrode to each electron-emitting device 26.

Returning to FIG. 1, the image forming section 14 emits light by irradiating an electron beam emitted from the electron-emitting device.
Any material may be used as long as it is formed from a material that causes discoloration, charging, deterioration, deformation, or the like. For example, a phosphor, a resist material, or the like can be used. In particular, when a phosphor is used, the formed image is a light-emitting (fluorescent) image, but in forming a full-color light-emitting image, three primary colors of R (red), G (green), and B (blue) are used. Formed by the body. In addition, if a phosphor that emits visible light is selected, the phosphor can be used as a visualization unit.

[0018] Tar Getting DOO 13 may be formed by any member as long as member for storing information of the electronic beam generated from the electron-emitting device, the change of the surface potential caused by the irradiation of the electron beam image information In other words, it is preferable that the charge is accumulated as an amount of electric charge. Can be used. The conductive substrate may be made of not only a metal such as Au, Ag, Ni, and Al, but also any material having the same conductivity as the metal. Further, the dielectric secondary emitting material, may be a conventionally known any secondary emission material. For example, MgO or the like formed on MgF ₂ or CaF ₂ is preferable.

The secondary electron collector 12 is an electrode for capturing secondary electrons generated by the target 13 and providing a return path, and is made of, for example, a conductive substrate having electron passing holes.

[0020]

Next, the operation of the storage type image forming apparatus having the above configuration will be described. FIG. 4 is a voltage waveform diagram showing each drive voltage. In FIG. 4, the horizontal axis represents time, and the vertical axis represents a relative potential with respect to the electron beam generator 11. (a) to (e) show three types of operation modes of erasing, writing, and displaying sequentially. 5 shows the transition of the potential of each part in the case of the above. 2A shows the voltage applied to the conductor of the target 13, FIG. 2B shows the voltage applied to the secondary electron collector 12, and FIGS. 2C and 2D show the dielectric applied to the surface of the target 13. 3 shows the potential of the secondary body emitter layer. In FIG. 3C, a case where the previously stored image is once erased in the erasing mode and then writing is performed in the writing mode is indicated by a solid line, and a case where the previously stored image is displayed again without erasing is indicated by a broken line. Represents. FIG. 11D shows a case where no image is stored in advance and neither erasing nor writing is performed. FIG. 5E shows the potential of the image forming unit 14.

Here, since each electron-emitting device can be individually driven independently, it is possible to partially erase the stored image. For this reason, during the period of the erase mode, the potential shown in FIG. 3C appears on the target 13 at a portion where erasing is performed, and the potential shown in FIG. .

Hereinafter, the operation for each mode will be described in detail with reference to FIG. First, in the erasing mode, a voltage of about 30 V with respect to the potential of the electron beam generator 11 is applied to the conductor serving as the substrate of the target 13. At about the same time, the electron-emitting devices corresponding to the image erasure area in the electron beam generator 11 are selectively driven, and the target 13 is irradiated with the electron beam. The potential of the dielectric secondary electron-emitting layer in the portion of the target 13 where the image was stored before the erasing mode is temporarily raised to about 30 V as shown by the solid line in FIG. , The electrons are accumulated and fall to 0V which is almost equal to the potential of the electron-emitting device. At this time, 30 V is maintained in a region where erasing is not performed, as indicated by a broken line. The potential of the dielectric secondary emission layer of the partial images which had not been accumulated previously erase mode is substantially 0V during the erase mode, which is 4
As shown in (d), it is maintained regardless of whether the electron-emitting device is driven.

Next, in the write mode, the target 1
At the same time that a voltage of about 500 V is applied to the conductor 3, a voltage of 520 V is applied to the secondary electron collector 12.
Voltage is applied. Accordingly, the target 13
The potential of the dielectric secondary electron-emitting layer in the area where the image is stored above is raised to about 500 V as shown by the broken line in FIG. 4C, and is maintained during the writing mode.
On the other hand, the dielectric secondary electron-emitting layer in the region where no image is stored is raised to about 470 V, but when writing is not performed, this potential is maintained as shown in FIG. Is done.

When writing is performed, the electron-emitting device is driven according to the write data, and the writing region is irradiated with an electron beam. In the erase mode, the secondary electron emission coefficient was smaller than 1 because the acceleration voltage applied to the conductor of the target 13 was low. However, in the write mode, the secondary emission coefficient was 1 because the acceleration voltage was high. Beyond. Therefore, the dielectric secondary emission layer in the region irradiated with electrons is gradually positively charged by secondary electron emission as shown by a solid line in FIG. 4C, and rises until the potential is saturated. At the same time, the emitted secondary electrons are captured by the secondary electron collector 12. As a result, the area where the image is being written has a potential of about 500V, areas not written will have a voltage of about 470V. Next, in the display mode, when a phosphor is used as the image forming unit 14, an acceleration voltage is applied to the image forming unit 14 in order to excite the phosphor and give electrons sufficient energy to emit visible light. Is done. At about the same time, when the potential of the conductor of the target 13 is reduced to about 10 V, the potential of the area where the image is written becomes about 10 V and the potential of the area where the image is not written becomes about -20 V.
Therefore, when all the electron-emitting devices of the electron beam generator 11 are driven to emit electrons, the target 13 functions as if it were a control grid.

That is, in the region of +10 V, the electrons easily reach the image forming portion 14 through the electron passage holes provided in the target 13, but in the region of −20 V, due to the repulsive force of the electrons, The electron beam does not reach the image forming unit 14 without reaching the target 13.

Although the operation time of each mode is shown equally in FIG. 4 for the sake of convenience, in practice, it may be appropriately selected in consideration of characteristics. Further, the operating potential is not limited to the aforementioned potential.

Further, a second main feature of the present invention resides in that the polarity of the voltage applied to the electron-emitting device is inverted according to the operation mode when electrons are emitted from the electron-emitting device. Specifically, regarding the display, erase, and write modes described above, when the polarity in the display mode is positive, the polarities in the erase mode and the write mode are opposite. This has the effect of shifting the arrival point of the electrons by utilizing the negative charges of the electrons. That is, the flying direction of the electrons is changed by the interaction between the electric field due to the polarity of the electrode of the electron-emitting device and the charge of the emitted electrons. An electron-emitting device effective for this driving method is of a type having an initial acceleration, particularly an initial acceleration in a direction parallel to the electron-emitting surface. It is needless to say that the initial acceleration greatly affects the arrival point, and is also easily affected by the polarity of the electrode of the electron-emitting device. One of the typical electron-emitting devices of this type is the above-mentioned surface conduction electron-emitting device. In the surface conduction electron-emitting device, as shown in FIG. 2, the emitted electron flies by obtaining a velocity component on the positive electrode 22 side of the device applied voltage, so that the configuration of the present invention is more effective.

The details will be described below with reference to FIGS.
5 and 6 are conceptual diagrams of the flight direction of electrons. In the figure, 52 and 53 are device electrodes having different polarities,
5, 65 are arrows indicating the direction of flight of the emitted electrons, 57
Is an electron passage hole. Here, the electrode 53, the electrodes 52 on both sides thereof, and the electron-emitting portion 2 formed between them.
4 forms one electron-emitting device 56. FIG.
In, the element electrode 53 is on the high potential side, and the element electrodes 52 on both sides are on the low potential side. In FIG. 6, the polarity is opposite to this.

In such a configuration, as apparent from the drawing, a difference occurs in the flight direction depending on the polarity of the voltage applied to the device electrodes 52 and 53. In the present invention, the operation in each mode is efficiently realized by utilizing this difference. That is, in the display mode, the electron beam is emitted from the secondary electron collector 12 and the target 1 disposed above the electron-emitting device.
3 collides with the image forming portion through the electron passage hole 57, the polarity of the element electrode in the case of FIG. 5 is preferable. In the erase and write modes, the surface of the target 13 near the electron passage hole 57 is removed. The polarity shown in FIG. 6 is preferable because electrons collide with each other in order to eliminate or charge. Therefore, as shown in FIGS. 5 and 6, the electron passage holes 57 are preferably formed at the same pitch as the electron-emitting devices so as to be located vertically above the electron-emitting devices. The size of the electron passage hole 57 may be a size that allows a necessary amount of electrons to pass therethrough, but the electron passage hole 57 of the secondary electron collector 12 is preferably larger than that of the target.

According to this, unnecessary shielding of electrons by the secondary electron collector 12 and the target 13 is reduced as much as possible, and the operation in each mode is performed efficiently. Hereinafter, the present invention will be described in more detail based on examples.

[0031]

FIG. 7 is a sectional view of a storage type image forming apparatus according to an embodiment of the present invention. In the drawings, the portions corresponding to the components in FIGS. 1 to 6 are denoted by the same reference numerals as those in these drawings. 7, reference numeral 75 denotes a face plate;
Reference numeral 6 denotes a transparent conductive film formed on the inner surface thereof, and reference numeral 77 denotes a phosphor further formed on the inner surface thereof. Reference numeral 72 denotes a support frame that supports between the insulating base 21 and the face plate 14. Figure 8 is an enlarged plan view of the electron-emitting element 56 portion formed on the insulating substrate 21. In FIG. 8, reference numerals 81 and 82 denote wiring electrodes for supplying voltages to the device electrodes 53 and 52, respectively, and are wired so that the electron-emitting devices 56 can be driven by applying voltages independently.

This device is manufactured as follows. First, the insulating substrate 21 is sufficiently washed, and then the electron beam generating unit 11 is manufactured by forming a plurality of electron-emitting devices 56 on the insulating substrate 21 by a photolithography technique, which is a commonly used deposition technique. . At this time, the electrode 5
Reference numerals 2 and 53 are made of a material containing Ni as a main component. Such an electrode material may be any material as long as it is manufactured so that the electric resistance is sufficiently low. In addition, Pd is used as a material of the electron emitting portion 24. Of course, Ag, A
u, SnO ₂ , In ₂ O ₃ or the like may be used, and the invention is not limited to these.

Next, a transparent conductive film 7 is formed by depositing ITO in advance.
The image forming unit 14 is manufactured by attaching the phosphor 76 by the slurry method on the glass substrate on which the substrate 6 is formed. A printing method, a precipitation method, or the like may be used instead of the slurry method.

Next, the secondary electron collector 12 is manufactured by providing through holes in the Ni plate at the same pitch as the previously formed electron emitting elements 56 to form the electron passage holes 57.

Next, an electron passage hole 57 smaller than the electron passage hole of the secondary electron collector 12 is similarly provided, and an MgF ₂ layer and a dielectric secondary electron emitter layer are formed on the surface thereof by a vacuum film forming technique. An MgO layer thereon is formed, and a target 13 is manufactured.

Next, the fabricated electron beam generator 11, secondary electron collector 12, target 13, and image forming unit 1
4 are sequentially arranged, and frit-sealed to the support frame 72.

Next, the atmosphere in the glass container constructed as described above is evacuated by a vacuum pump, and when a sufficient degree of vacuum is reached, the voltage is gradually increased by energizing the electron emitting section 24. This causes irreversible deformation of the electron emitting portion 24. Finally, the glass container is sealed. In addition,
The degree of vacuum sufficient to obtain a more stable operation in this apparatus was 10 ^-6 to 10 ^-7 torr.

This device is driven in the following manner according to each mode based on the above-described principle. First, in the writing mode, a potential difference of 14 V is applied between the element electrodes 52 and 53 only to the electron-emitting element to be written, with the central element electrode 53 being on the low potential side. No potential difference is given to other electron-emitting devices. Almost at the same time, the target 13 was set to 500 V and the secondary electron collector 12 was set to 520 V.
And

In the display mode, a voltage is applied to all the electron-emitting devices with a polarity opposite to that described above. The potential difference at this time is 14V. Almost at the same time, the transparent conductive film 76 in the image forming section is set at 500 V, the target 13 is set at 10 V, and the secondary electron collector 12 is set at 20 V. In the erase mode, a voltage is applied only on the element to be erased, having the same polarity as in the write mode. At this time, the target 13 is set to 30V, and the secondary electron collector 12 is set to 20V. The apparatus forms an image by sequentially repeating the three modes of the writing mode, the display mode, and the erasing mode. As a result, an image corresponding to the stored image information is formed, and the image information is partially rewritten.

Here, if the display mode time is increased, for example, by a factor of 10, the screen brightness will increase. During this display mode, the image information stored in the target 13 is sufficiently held.
In addition, as a phosphor of the image forming unit 14, R (red),
Good full-color images can be obtained by regularly arranging the three primary color phosphors of G (green) and B (blue) in accordance with the pitch of the electron-emitting devices, and selecting the voltage applied to each member in accordance with the phosphor. You can also.

FIGS. 9 and 10 are conceptual diagrams of a recording apparatus using this storage type image forming apparatus. In this apparatus, a light emitting pattern formed on the storage type image forming apparatus 94 in accordance with image information based on the above-described principle is formed on a recording medium 91 by a cell hook lens or the like and irradiated. Thereby, a photosensitive pattern is formed on the surface of the recording medium 91 when the recording medium 91 is a photosensitive material, and a heat-sensitive pattern is formed when the recording medium 91 is a heat-sensitive agent. The storage-type image forming apparatus 94 is provided with electron-emitting devices that generate electron beams in a line shape. The recording medium 91 or the storage-type image forming apparatus 94 is moved to sequentially scan an image line by line. As a result, the entire image is recorded. Alternatively, the electron-emitting devices may be developed in a plane to record all the images collectively. As the recording medium 91, for example, a photosensitive (heat-sensitive) sheet can be used. In this case, the recording medium 91 is supported by the drum 92 and the transport roller 93.

FIG. 11 shows the configuration of an electrophotographic recording apparatus using the storage type image forming apparatus of this embodiment. In this apparatus, in addition to an accumulation type image forming apparatus 94, a phenomenon machine 96, a static eliminator 97, a cleaner 98, and a charger 99 are arranged around a drum-shaped recording medium 95 in order along a rotation direction.
Is provided. In this configuration, when an image is displayed by the light emission of the accumulation type image forming apparatus 94, the light of the image is irradiated on the recording medium 95 to expose the recording medium 95. The photosensitive portion of the recording medium 95 is neutralized, and the non-exposed portion adsorbs the toner supplied from the developing device 96. The portion on which the toner has been adsorbed moves with the rotation of the recording medium 95, and is discharged.
When the charging is released by 7, the adsorbed toner falls. At this time, the paper 100 on which an image is to be formed is located between the recording medium 95 and the static eliminator 97, and the toner falls onto the paper 100. Paper 10 with toner
0 moves to a fixing device (not shown) where the toner is fixed on the paper 100, thereby
The image represented by the storage-type image forming apparatus 94 is reproduced and recorded on the image No. 0. The remaining toner is the cleaner 98
Then, the charged state of the recording medium 95 is formed again by the charger 99. In this case, the recording medium 95
, All images are recorded collectively, but image recording can be performed a plurality of times without applying an information signal again. That is, the advantage of accumulating images is utilized.

[0043]

As described above, according to the present invention, since the electron beam generating section is formed from a plurality of identical electron-emitting devices, it is possible to simplify the device structure and increase the density of pixels. The device itself can be made thinner and the manufacturing cost can be reduced. Partial erasure is also possible. further,
By changing the electrode polarity of the electron-emitting device, each mode operation of writing, displaying, and erasing an image can be efficiently performed. Therefore, it is possible to realize a very effective storage type image forming apparatus.

[Brief description of the drawings]

FIG. 1 is a basic configuration diagram illustrating a storage type image forming apparatus of the present invention.

FIG. 2 is a cross-sectional view illustrating one electron-emitting device portion of an electron beam generator in the apparatus of FIG.

FIG. 3 is a plan view showing a state in which the electron-emitting device as shown in FIG. 2 is developed in a plane.

FIG. 4 is a voltage waveform diagram showing a drive voltage of each unit in the apparatus of FIG.

FIG. 5 is a conceptual diagram of a flight direction of electrons in the apparatus of FIG.

FIG. 6 is a conceptual diagram of a flight direction of electrons in the apparatus of FIG.

FIG. 7 is a sectional view of a storage type image forming apparatus according to the first embodiment of the present invention.

FIG. 8 is an enlarged plan view of each electron-emitting element formed on the insulating substrate of FIG. 7;

FIG. 9 is a conceptual diagram of a recording apparatus using the accumulation type image forming apparatus of the present invention.

FIG. 10 is a conceptual diagram of a recording apparatus using the accumulation type image forming apparatus of the present invention.

FIG. 11 is a schematic diagram illustrating a configuration of an electrophotographic recording apparatus using a storage type image forming apparatus of the present invention.

FIG. 12 is a cross-sectional view illustrating a storage-type display device according to a conventional example.

FIG. 13 is a cross-sectional view showing a storage-type display device according to a conventional example.

[Explanation of symbols]

11: electron beam generating unit, 12: secondary collector, 13: target, 14: image forming unit, 21: insulating substrate, 22:
High potential side device electrode, 23: Low potential side device electrode, 24: Electron emitting portion, 26, 56: Electron emitting device, 52, 53: Device electrodes having different polarities, 55, 65: Electron flight direction Arrow, 57: electron passage hole, 91: recording medium, 9
2: drum, 93: transport roller

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-63-51026 (JP, A) JP-A-1-146236 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01J 31/08 H01J 31/12 H01J 31/18

Claims (9)

(57) [Claims] 1. A plurality of electron-emitting devices that emit electrons according to image information, and image information is accumulated by irradiating the electrons, and electrons newly emitted from the electron-emitting device according to the image information. A storage-type image forming apparatus comprising: an image information storage unit that modulates an image; and an image forming unit that receives an electron beam modulated by the image information storage unit and forms an image corresponding to image information. The element consists of opposing electrodes and between the electrodes
And an electron emitting portion provided, and a voltage is applied between the electrodes.
Emits electrons from the electron-emitting part by passing current
A surface conduction electron-emitting device for driving the electron-emitting device
The element driving means is in a writing mode for storing the image information.
And in the erase mode for erasing the stored information,
The electrons emitted from the electron-emitting device are used for storing the image information.
To collide with the steps and according to the stored image information
In the display mode for forming a broken image, the
Electrons emitted from the image information storage means are provided in the image information storage means.
Colliding with the image forming means through the electron passage hole
A voltage of which polarity is switched is applied to the electron-emitting device.
Storage-type image forming apparatus, characterized in that the shall. 2. The device according to claim 1, wherein the electron-emitting device is disposed at a center.
A first device electrode, and a first device electrode disposed on both sides of the first device electrode.
The second and third device electrodes, the first device electrode and the
Between the two device electrodes and between the first device electrode and the third device electrode.
First and second electron emission respectively formed between poles
And the electron emission element driving unit includes the writing unit.
In the mode and the erase mode, the first element electrode is moved forward.
The electrodes having a polarity lower than that of the second and third element electrodes.
Pressure between the device electrodes, and in the display mode,
The first element electrode is higher than the second and third element electrodes.
Applying a voltage having a polarity as a potential between the element electrodes;
The storage-type image forming apparatus according to claim 1, wherein: 3. The plurality of electron-emitting devices are linear,
3. The storage-type image forming apparatus according to claim 1, wherein the storage-type image forming apparatus is regularly arranged in a plane or a matrix. Wherein said image information storage means, storage-type image forming apparatus according to any one of claims 1-3, characterized in that is to accumulate as charge amount of image information. 5. A storage-type image forming apparatus according to any one of claims 1-4, wherein said image forming means is a visualizing means for visually forms an image corresponding to the image information. 6. The storage-type image forming apparatus according to claim 5 , wherein said visualizing means emits light when irradiated with said electron beam. Wherein said image information storing means, according to claim 1, characterized in that at a position facing the right in front of each electron-emitting device is one having the electron passage holes at the same pitch
7. The storage-type image forming apparatus according to any one of 6 . 8. The image forming apparatus according to claim 1, wherein said image forming means forms an image by light emission, and has a recording medium on which an image is recorded by said light emission .
An accumulation-type image forming apparatus according to any one of the preceding claims. 9. The image forming apparatus according to claim 1, wherein said image forming means forms an image by light emission, and comprises means for supporting a recording medium on which an image is recorded by said light emission.
8. The storage-type image forming apparatus according to any one of items 7 to 7 .