JP3210838B2 - Manufacturing method of semiconductor device storage package - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device housing package for housing a semiconductor device.
More specifically, the present invention relates to a method for applying a plated metal layer to a metallized metal layer applied to a package for housing a semiconductor element by electrolytic plating.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element is generally made of an electrically insulating material such as an aluminum oxide sintered body, and has a stepped recess for housing the semiconductor element on its upper surface. And an insulating base on which a plurality of metallized wiring layers made of a high melting point metal powder such as tungsten, molybdenum, and manganese are applied from the periphery of the step portion of the concave portion to the outer peripheral portion of the upper surface; An external lead terminal made of a metal such as an iron-nickel alloy, which is attached to a portion attached to the outer peripheral portion of the upper surface of the insulating base via a brazing material such as silver solder, and a lid made of an iron-nickel-cobalt alloy The semiconductor element is bonded and fixed to the bottom surface of the concave portion of the insulating base via an adhesive such as a gold-silicon brazing material, and each electrode of the semiconductor element is connected to a button. Electrically connected to the metallized wiring layer via a wiring, and thereafter, a lid is joined to the upper surface of the insulating base via a brazing material, and the semiconductor element is hermetically sealed inside a container formed of the insulating base and the lid. A semiconductor device as a product is obtained by accommodating the semiconductor device.

[0003] In the package for accommodating a semiconductor element, a frame-shaped metallized metal layer made of a refractory metal powder such as tungsten, molybdenum, manganese or the like is formed on the upper surface around the concave portion of the insulating substrate. By joining the lid to the metallized metal layer via a sealing material such as a gold-tin brazing material, the container formed of the insulating base and the lid is hermetically sealed.

Further, the metallized wiring layer and the frame-shaped metallized metal layer adhered to the insulating base have excellent corrosion resistance of nickel, gold, etc. on the exposed surfaces thereof, and a gold-tin solder as a bonding wire or a sealing material. A metal having good bonding properties with the material is applied by a plating method, and the metallized wiring layer and the metallized metal layer are effectively prevented from being oxidized and corroded by the plated metal layer made of nickel, gold, etc. and bonded to the metallized wiring layer. The connection with the wire and the bonding between the metallized metal layer and the lid via a sealing material such as a gold-tin brazing material are made easy and strong.

Further, the plating metal layer is usually applied to the exposed surface of the metallized wiring layer and the metallized metal layer by an electrolytic plating method. Specifically, a part of the metallized wiring layer is connected to the metallized metal layer. At the same time, external lead terminals electrically connected to each metallized wiring layer by a connecting member are attached to each metallized wiring layer via a brazing material. Applying plating power to each metallized wiring layer and metallized metal layer through the external lead terminal while immersing, depositing and depositing a plated metal layer on the surface of each metallized wiring layer and metallized metal layer, and finally the metallization for connection The metallized wiring layer and the metallized metal layer are made electrically independent by grinding and removing part of the layer with a grinder or other grinding device. .

[0006]

However, according to the conventional package for accommodating a semiconductor element, when the metallized wiring layer and the metallized metal layer are exposed on the exposed surface of the metallized wiring layer and the metallized metal layer, The plated metal layer is also adhered to the exposed surface of the metallization layer for connection that electrically connects the metallization layer to the surface of the metallization layer for connection when a part of the metallization layer for connection is ground and removed with a grinder or the like. Part of the applied plating metal layer is peeled off from the connection metallization layer due to mechanical stress at the time of grinding, and as a result, moisture in the air enters between the peeled plating metal layer and the connection metallization layer. Corrosion occurs in the metallized layer for connection, and the corrosion progresses to the metallized metal layer, and the airtightness of the container composed of the insulating base and the lid is increased. Breaking the stop, the semiconductor element housed in the container properly, had the disadvantage and can not be stably operated.

[0007]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional drawbacks, and has as its object to provide a semiconductor device housing package capable of operating normally and stably a semiconductor device housed therein for a long period of time. It is to provide a manufacturing method of.

[0008]

According to the present invention, there is provided a stepped recess for accommodating a semiconductor element on an upper surface, and a plurality of metallized wiring layers are provided from the step of the recess to the outer periphery of the upper surface. And an insulating base having a frame-shaped metallized metal layer adhered on the upper surface around the concave portion, a plurality of external lead terminals attached to the metallized wiring layer, and a frame-shaped metallized metal layer. A semiconductor element housing package comprising a lid to be attached, wherein the insulating base to which the external lead terminals are attached is manufactured by the following steps (1) to (6). It is.

(1) A stepped concave portion for accommodating a semiconductor element is provided on the upper surface, and a plurality of metallized wiring layers are formed from the step portion of the concave portion to the outer peripheral portion of the upper surface. Forming a metallized metal layer on the upper surface thereof to form an insulating base having a connection metallized layer for connecting at least one of the metallized wiring layers and the metallized metal layer; and (2) a part of the metallized layer for connection. (3) attaching the other ends of a plurality of external lead terminals, one end of which is commonly connected to a connecting member, to each metallized wiring layer, and (4) the metallized wiring. Depositing a plated metal layer on the exposed surfaces of the metallized layer, the metallized metal layer, the connecting metallized layer and the external lead terminals by electrolytic plating; and (5) removing a part of the metallized layer for connection by the insulating method. A step of grinding and removing the metallized wiring layer and the metallized metal layer electrically at a portion where the layer is applied, and (6) a step of cutting and separating the external lead terminals from a connecting member. Has a stepped concave portion for accommodating a semiconductor element on an upper surface, and a plurality of metallized wiring layers are applied from a step portion of the concave portion to an outer peripheral portion of the upper surface, and a frame-shaped metallized surface is formed on the upper surface around the concave portion. A semiconductor element housing comprising: an insulating base on which a metal layer is attached; a plurality of external lead terminals attached to the metallized wiring layer; and a lid attached to the frame-shaped metallized metal layer. And wherein the insulating base to which the external lead terminals are attached is manufactured by the following steps (1) to (6).

(1) A stepped concave portion for accommodating a semiconductor element is provided on the upper surface, and a plurality of metallized wiring layers are formed on the upper surface around the concave portion from the step of the concave portion to the outer peripheral portion of the upper surface. Forming a metallized metal layer on the upper surface thereof to form an insulating base having a connection metallized layer for connecting at least one of the metallized wiring layers and the metallized metal layer; and (2) a part of the metallized layer for connection. (3) attaching the other ends of the plurality of external lead terminals having one end commonly connected to the connecting member to each metallized wiring layer. ,
(4) a step of applying a plating metal layer to the exposed surfaces of the metallized wiring layer, the metallized metal layer, the metallized layer for connection, and the external lead terminals by an electrolytic plating method;
Grinding a part of the connection metallization layer in a gap between the two insulating layers to make the metallization wiring layer and the metallization metal layer electrically independent; and (6) connecting the external lead terminals. Process of cutting and separating from members

[0011]

According to the method for manufacturing a package for housing a semiconductor element of the present invention, a part of a metallizing layer for connecting a metallized wiring layer and a metallized metal layer is partially covered with an insulating layer or two metallized layers having a gap therebetween. When the plating metal layer is applied to the exposed surfaces of the metallized wiring layer and the metallized metal layer, the plating metal layer is applied to the exposed surface of the metallization layer for connection, and a part of the metallized layer for connection. When a part of the plated metal layer applied to the surface of the connection metallized layer is to be peeled off by mechanical stress at the time of grinding when grinding is removed by a grinding device such as a router, the peeling is effectively prevented by the insulating layer. As a result, moisture in the air enters between the metallization layer for connection and the plated metal layer, and the metallization for connection is caused by the infiltrated moisture. There is not to be corroded, whereby the complete hermetic sealing of the container made of the insulating base and the lid, the semiconductor element housed in the container properly, it is possible to stably operate.

[0012]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 shows an embodiment of a package for housing a semiconductor element manufactured by the manufacturing method of the present invention, wherein 1 is an insulating base, and 2 is a lid. The insulating base 1 and the lid 2 constitute a container 4 for housing the semiconductor element 3.

The insulating substrate 1 is made of an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body,
A stepped recess 1a for accommodating a semiconductor element is formed in the center of the upper surface of the electrically insulating material such as a silicon carbide sintered body or a glass ceramic, and the semiconductor element 3 is formed of glass on the bottom surface of the recess 1a. , Resin, brazing material and the like.

The insulating substrate 1 has a plurality of metallized wiring layers 5 extending from the step portion of the concave portion 1a to the outer peripheral portion of the upper surface through the inside, and at the step portion of the concave portion 1a of the metallized wiring layer 5, The semiconductor element 3 is
Are electrically connected to each other through bonding wires 6, and external lead terminals 7 connected to an external electric circuit are provided via a brazing material such as silver brazing at a portion extending to the outer peripheral portion of the upper surface of the insulating base 1. Attached.

The metallized wiring layer 5 is made of tungsten,
It is made of a metal such as molybdenum, manganese, palladium, silver, or copper, and serves to connect each electrode of the semiconductor element 3 to the external lead terminal 7.

An external lead terminal 7 attached to the metallized wiring layer 5 functions to connect each electrode of the semiconductor element 3 to a predetermined external electric circuit, and is made of an iron-nickel-cobalt alloy, an iron-nickel alloy, or the like. Formed of a metallic material.

Further, the insulating base 1 has a recess 1a on its upper surface.
A frame-shaped metallized metal layer 8 is adhered to the periphery, and a metal lid 2 is joined to the metallized metal layer 8 via a sealing material made of gold-tin brazing material or the like. ing.

The frame-shaped metallized metal layer 8 is made of a metal such as tungsten, molybdenum, manganese, palladium, silver, or copper, and functions as a base metal layer when the lid 2 is joined to the insulating base 1.

The metallized wiring layer 5 and the metallized metal layer 8 adhered to the insulating substrate 1 have excellent corrosion resistance on the exposed surfaces, such as nickel, gold, etc., and have good bondability with a bonding wire and a sealing material. An excellent plating metal layer 9 is applied by a conventionally well-known electrolytic plating method. The plating metal layer 9 effectively prevents the metallized wiring layer 5 and the metallized metal layer 8 from being oxidized and corroded. 5 and the bonding wire 6 and the metallized metal layer 8 and the lid 2 are easy and strong.

Thus, according to the package for accommodating a semiconductor element, the semiconductor element 3
Is bonded and fixed via an adhesive such as glass, resin or brazing material, and each electrode of the semiconductor element 3 is electrically connected to the metallized wiring layer 5 via a bonding wire 6.
Thereafter, the lid 2 is joined to the frame-shaped metallized metal layer 8 attached to the upper surface of the insulating base 1 via a sealing material such as a gold-tin brazing filler metal, and the lid 2 is separated from the insulating base 1 and the lid 2. The semiconductor device 3 as an end product is obtained by hermetically housing the semiconductor element 3 inside the container 4.

Next, a method for manufacturing an insulating substrate to which the external lead terminals of the above-described package for housing a semiconductor element are attached will be described with reference to FIGS. First, FIG.
As shown in (b), the upper surface has a stepped concave portion 1a for accommodating a semiconductor element, and a plurality of metallized wiring layers 5 are formed from the step portion of the concave portion 1a to the outer peripheral portion of the upper surface. An insulating base 1 having a frame-shaped metallized metal layer 8 on its upper surface and a connecting metallized layer 10 for connecting at least one of the metallized wiring layers 5 and the metallized metal layer 8 on its upper surface is prepared. A part of the metallized layer 10 is covered with the insulating layer 11.

The insulating substrate 1 on which the metallized wiring layer 5, metallized metal layer 8, connecting metallized layer 10 and insulating layer 11 are adhered, for example, when made of an aluminum oxide sintered body, is made of aluminum oxide, silicon oxide, An appropriate organic binder, solvent, plasticizer, dispersant, etc. are added to the raw material powders such as calcium oxide and magnesium oxide to form a slurry, which is then formed into a sheet by employing a conventionally known doctor blade method. Then, a plurality of ceramic green sheets are obtained. Thereafter, the ceramic green sheets are appropriately punched, and the ceramic green sheets are stacked up and down to form a ceramic forming form. Finally, the ceramic forming form is reduced in a reducing atmosphere. About 1 in
The metallized wiring layer 5, the metallized metal layer 8, and the metallized layer for connection 10 are manufactured by firing at a temperature of 600 ° C., and an appropriate organic binder, a plasticizer, and a solvent are added to a metal powder such as tungsten or molybdenum. A metal paste is obtained by mixing, and the metal paste is printed and applied in a predetermined pattern on a ceramic green sheet serving as the insulating substrate 1 by a screen printing method in advance, so that the metal paste is adhered and formed at a predetermined position on the insulating substrate 1 in a predetermined pattern.

Further, the insulating layer 11 is formed by adding an appropriate organic binder, plasticizer,
A solvent is added and mixed to obtain an insulating paste, which is applied by printing onto a part of the metallization layer for connection by screen printing.

Next, as shown in FIGS. 3A and 3B,
In addition to the external lead terminals 7, one end of which is electrically connected in common by a frame-shaped connecting member 12 to a portion of the metallized wiring layer 5 attached to the insulating substrate 1, which is led to the outer peripheral portion of the upper surface of the insulating substrate 1. Attach the end through a brazing material such as silver brazing.

The external lead terminals 7 are made of a metal material such as an iron-nickel alloy or an iron-nickel-cobalt alloy, and are rolled, punched, or etched into an ingot of the iron-nickel alloy or the like. One end is attached to the connecting member 12 by applying a conventionally known metal working method such as a method.

The external lead terminals 7 are attached to the metallized wiring layer 5 by placing the external lead terminals 7 on the metallized wiring layer 5 with a silver brazing foil interposed therebetween. This is done by melting at a temperature of about 850 ° C.

Next, as shown in FIGS. 4A and 4B, a plating metal layer 9 is applied to the surfaces of the metallization wiring layer 5 and the metallization metal layer 8 by electrolytic plating.

The plating metal layer 9 is applied to the metallized wiring layer 5 and the metallized metal layer 8 by immersing the insulating substrate 1 on which the external lead terminals 7 are attached in an electrolytic plating solution of nickel or gold and external leads. This is performed by applying plating power for electrolytic plating to the metallized wiring layer 5 and the metallized metal layer 8 via the terminal 7. In this case, the metallized wiring layer 5 and the metallized metal layer 8 are electrically connected by the connecting metallized layer 10, and each metallized wiring layer 5 is electrically connected by the connecting member 12 of the external lead terminal 7. Therefore, plating metal layer 9 can be applied to all metallized wiring layers 5 and metallized metal layers 8 only by applying plating power to external lead terminals 7.

Finally, as shown in FIGS. 5A and 5B,
The portion of the connection metallized layer 10 covered with the insulating layer 11 is ground and removed by using a grinder or the like to make the metallized wiring layer 5 and the metallized metal layer 8 electrically independent, as shown in FIG. The insulating substrate 1 to which the external lead terminals 7 are attached is completed.

In this case, the metallization layer 10 for connection, which is ground and removed by using a grinding device such as a luter, has the surface covered with the insulating layer 11, and therefore the plating metal layer 9 is not applied. Therefore, even if the metallized layer for connection is removed by grinding with a grinding device, the plated metal layer 9 does not peel off from the metallized layer for connection 10 due to the mechanical stress of the grinding. Moisture in the atmosphere invades between the layer 9 and the metallizing layer 10 for connection, and the corrosion proceeds to the metallized metal layer 8 to hermetically seal the container 4 composed of the insulating substrate 1 and the lid 2. There is no break.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. An insulating layer is partially applied, and the metallized layer for connection in the area where the insulating layer is applied is ground and removed using a grinder or the like, so that the metallized wiring layer and the metallized metal layer are electrically independent. Figure 6
(A) As shown in (b), two insulating layers 11a and 11b having a gap between them are adhered to the surface of the metallizing layer 10 for connection, and are located in the gap between the two insulating layers 11a and 11b. The metallization layer 10 for connection may be ground and removed using a grinding device such as a luter so that the metallization wiring layer 5 and the metallization metal layer 8 are electrically independent. in this case,
The two insulating layers 11a and 11b effectively prevent the plated metal layer deposited on the surface of the connection metallized layer 10 from being separated from the connection metallized layer 10 due to mechanical stress of grinding. Moisture in the atmosphere invades between the metallized layer 10 and the plated metal layer, corroding the metallized layer 10 for connection, and the corrosion proceeds to the metallized metal layer 8 so that the container formed of an insulating base and a lid is formed. It does not break the hermetic seal.

[0032]

According to the method for manufacturing a package for accommodating a semiconductor element of the present invention, a part of a metallization layer for connecting a metallized wiring layer and a metallized metal layer is covered with an insulating layer or has a gap between them. When the metallized wiring layer and the metallized metal layer are covered with the plated metal layer, the metallized wiring layer and the metallized metal layer are covered with the plated metal layer. When a part of the plated metal layer applied to the surface of the connection metallized layer is to be peeled off by mechanical stress during grinding when a part is ground and removed by a grinding device such as a router, the peeling is effective by the insulating layer. Is prevented by
As a result, the moisture in the air enters between the metallized layer for connection and the plated metal layer, and the metallized layer for connection is not corroded by the infiltrated water. Thus, the hermetic sealing of the container can be completed, and the semiconductor element housed inside the container can be operated normally and stably.

[Brief description of the drawings]

FIGS. 1A and 1B are a cross-sectional view and a plan view of an insulating substrate used in an embodiment of a package for housing a semiconductor element manufactured by a manufacturing method of the present invention.

FIGS. 2A and 2B are a cross-sectional view and a plan view for explaining a method of manufacturing a package for housing a semiconductor element according to the present invention.

FIGS. 3A and 3B are a cross-sectional view and a plan view for explaining a method for manufacturing a package for housing a semiconductor element according to the present invention.

4A and 4B are a cross-sectional view and a plan view for explaining a method for manufacturing a package for housing a semiconductor element according to the present invention.

5A and 5B are a cross-sectional view and a plan view for explaining a method for manufacturing a package for housing a semiconductor element according to the present invention.

FIGS. 6A and 6B are a cross-sectional view and a plan view for explaining another embodiment of the method for manufacturing a semiconductor device housing package of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Semiconductor element 4 ... Container 5 ... Metallized wiring layer 7 ... External lead terminal 8 ... Metallized metal Layer 9 Plated metal layer 10 Metallized layer for connection 11 Insulating layer 12 Connection member

Claims (2)

(57) [Claims] An upper surface has a stepped recess for accommodating a semiconductor element, and a plurality of metallized wiring layers are applied from a step portion of the recess to an outer peripheral portion of the upper surface. An insulating base to which a frame-shaped metallized metal layer is attached, a plurality of external lead terminals attached to the metallized wiring layer, and a lid attached to the frame-shaped metallized metal layer. A method for manufacturing a package for housing a semiconductor element, wherein the insulating base to which the external lead terminals are attached is manufactured by the following steps (1) to (6). . (1) A stepped concave portion for accommodating a semiconductor element is provided on the upper surface, and a plurality of metallized wiring layers are provided from the step portion of the concave portion to the outer peripheral portion of the upper surface. Forming an insulating base on which a connecting metallization layer for connecting at least one of the metallized wiring layers and the metallized metal layer is adhered on the upper surface;
(2) a step of covering a part of the connection metallization layer with an insulating layer; and (3) connecting the other ends of the plurality of external lead terminals having one end commonly connected to the connection member to each metallization wiring layer. (4) applying a plating metal layer to the exposed surfaces of the metallized wiring layer, the metallized metal layer, the metallized layer for connection, and the external lead terminals by an electrolytic plating method; and (5) the metallized for connection. Grinding and removing a part of the layer at the portion where the insulating layer is applied, so that the metallized wiring layer and the metallized metal layer are electrically independent; and (6) connecting the external lead terminals to each other. Process of cutting and separating An upper surface having a stepped recess for accommodating a semiconductor element, a plurality of metallized wiring layers being applied from a step portion of the recess to an outer peripheral portion of the upper surface, and an upper surface around the recess; An insulating base to which a frame-shaped metallized metal layer is attached, a plurality of external lead terminals attached to the metallized wiring layer, and a lid attached to the frame-shaped metallized metal layer. A method for manufacturing a package for housing a semiconductor element, wherein the insulating base to which the external lead terminals are attached is manufactured by the following steps (1) to (6). . (1) A stepped concave portion for accommodating a semiconductor element is provided on the upper surface, and a plurality of metallized wiring layers are provided from the step portion of the concave portion to the outer peripheral portion of the upper surface. Forming an insulating base on which a connecting metallization layer for connecting at least one of the metallized wiring layers and the metallized metal layer is adhered on the upper surface;
(2) a step of covering a part of the connection metallization layer with two insulating layers having a gap therebetween; and (3) another end of a plurality of external lead terminals having one end commonly connected to a connection member. (4) attaching a plated metal layer to the exposed surfaces of the metallized wiring layer, the metallized metal layer, the connecting metallized layer, and the external lead terminals by electrolytic plating. (5) a step of grinding and removing a part of the connection metallization layer in a gap between the two insulating layers to make the metallization wiring layer and the metallization metal layer electrically independent; and (6) the external leads. Process of cutting and separating terminals from connecting members