JP3214066B2 - How to treat circuit conductors - Google Patents
How to treat circuit conductorsInfo
- Publication number
- JP3214066B2 JP3214066B2 JP16215992A JP16215992A JP3214066B2 JP 3214066 B2 JP3214066 B2 JP 3214066B2 JP 16215992 A JP16215992 A JP 16215992A JP 16215992 A JP16215992 A JP 16215992A JP 3214066 B2 JP3214066 B2 JP 3214066B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- layer
- circuit
- copper layer
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、無電解めっき処理で形
成された回路導体又は無電解めっき処理で表面導体が形
成されている回路導体の処理方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for treating a circuit conductor formed by electroless plating or a circuit conductor having a surface conductor formed by electroless plating.
【0002】[0002]
【従来の技術】従来、混成集積回路装置では、絶縁性合
成樹脂、アルミナ、セラミック等の絶縁材料で形成され
た回路基板に無電解めっき処理により形成された回路導
体や、印刷によって形成された下層導体に無電解めっき
処理を施して導体層を形成した多層構造を成す回路導体
が用いられる。前者の回路導体には、例えば、銅層、後
者の回路導体では、導体抵抗を低減させるため下層導体
に例えば、銀層、半田付けの便宜のため、上層導体に前
者と同様に銅層が用いられている。そして、これらの回
路導体と電子部品の電極又はリードフレーム等との電気
的な接続には半田付けが用いられている。2. Description of the Related Art Conventionally, in a hybrid integrated circuit device, a circuit board formed by an electroless plating process on a circuit board formed of an insulating material such as an insulating synthetic resin, alumina, or ceramic, or a lower layer formed by printing. A circuit conductor having a multilayer structure in which a conductor layer is formed by subjecting a conductor to electroless plating is used. For the former circuit conductor, for example, a copper layer, for the latter circuit conductor, for example, a silver layer for the lower layer conductor to reduce conductor resistance, and for convenience of soldering, a copper layer is used for the upper layer conductor similarly to the former. Have been. Soldering is used for electrical connection between these circuit conductors and electrodes or lead frames of electronic components.
【0003】[0003]
【発明が解決しようとする課題】ところで、図6に示す
ように、回路基板2に無電解めっき処理で形成された回
路導体としての銅層4に対して、半田付け処理で半田層
6が形成された場合、半田層6と銅層4との機械的な強
度に問題があるとの指摘がある。即ち、銅層4の表面に
形成された半田層6には、その成分である錫が含まれて
いるので、この錫と銅層を成す銅とが化合して錫−銅金
属間化合物8が形成され、この錫−銅金属間化合物8の
脆化が、半田層6と銅層4との固着強度を低下させ、必
要な機械的強度を維持することができない原因となって
いる。As shown in FIG. 6, a solder layer 6 is formed by soldering on a copper layer 4 as a circuit conductor formed on a circuit board 2 by electroless plating. In this case, it is pointed out that there is a problem in mechanical strength between the solder layer 6 and the copper layer 4. That is, since the solder layer 6 formed on the surface of the copper layer 4 contains tin as a component thereof, the tin and copper forming the copper layer combine to form the tin-copper intermetallic compound 8. The tin-copper intermetallic compound 8 is formed, and the embrittlement of the tin-copper intermetallic compound 8 lowers the bonding strength between the solder layer 6 and the copper layer 4, causing a failure to maintain the required mechanical strength.
【0004】また、図7に示すように、回路基板2に印
刷等によって下層導体である銀層10を形成し、その表
面に無電解めっき処理で上層導体である銅層12を形成
して2層構造を成す回路導体とし、その銅層12上に半
田付け処理で半田層14を形成した場合にも、半田層1
4の成分である錫と銅層12を成す銅とが化合して錫−
銅金属間化合物8が形成され、この錫−銅金属間化合物
8の脆化が半田層14と銅層12との固着強度を低下さ
せ、回路導体の電気的接続で必要とする機械的な強度を
維持することができない。As shown in FIG. 7, a silver layer 10 as a lower conductor is formed on a circuit board 2 by printing or the like, and a copper layer 12 as an upper conductor is formed on the surface by electroless plating. Even when a circuit conductor having a layer structure is formed and a solder layer 14 is formed on the copper layer 12 by soldering, the solder layer 1
4 and the copper forming the copper layer 12 combine to form tin-
The copper intermetallic compound 8 is formed, and the embrittlement of the tin-copper intermetallic compound 8 lowers the bonding strength between the solder layer 14 and the copper layer 12, and the mechanical strength required for electrical connection of circuit conductors Cannot be maintained.
【0005】このような錫−銅金属間化合物8の脆化
は、無電解めっきによって形成されている回路導体であ
る銅層4、12中に含まれる水素と、銅層4、12中の
結晶欠陥が原因であるとされている。[0005] Such embrittlement of the tin-copper intermetallic compound 8 is caused by hydrogen contained in the copper layers 4 and 12, which are circuit conductors formed by electroless plating, and the crystal in the copper layers 4 and 12. It is allegedly due to a defect.
【0006】そこで、本発明は、無電解めっき処理で形
成される銅層等の回路導体中の水素を後処理で除去する
ことにより、半田付け強度の低下を防止した回路導体の
処理方法を提供することを目的とする。Accordingly, the present invention provides a method for treating a circuit conductor in which a reduction in soldering strength is prevented by removing hydrogen in a circuit conductor such as a copper layer formed by electroless plating in a post-treatment. The purpose is to do.
【0007】[0007]
【課題を解決するための手段】即ち、本発明の回路導体
の処理方法は、回路基板(2)の表面に無電解めっきに
よって回路導体(銅層16)を形成し、この回路導体に
防錆処理を行った後、水素を含まないか又は水素の減圧
下で前記回路導体に加熱処理を施すことを特徴とする。That is, according to the method for treating a circuit conductor of the present invention, a circuit conductor (copper layer 16) is formed on the surface of a circuit board (2) by electroless plating, and this circuit conductor is rust-proofed. After the treatment, the circuit conductor is subjected to a heat treatment without hydrogen or under reduced pressure of hydrogen.
【0008】また、本発明の回路導体の処理方法は、回
路基板(2)の表面に形成された下層導体(銀層26)
の表面に無電解めっきによって導体層(銅層28)を形
成し、この導体層に防錆処理を行った後、水素を含まな
いか又は水素の減圧下で前記導体層に加熱処理を施すこ
とを特徴とする。Further, the method for treating a circuit conductor according to the present invention relates to a method for treating a lower conductor (silver layer 26) formed on the surface of a circuit board (2).
Forming a conductor layer (copper layer 28) on the surface of the conductor by electroless plating, performing a rustproofing treatment on the conductor layer, and then performing a heat treatment on the conductor layer without hydrogen or under reduced pressure of hydrogen. It is characterized by.
【0009】[0009]
【作用】無電解めっき処理で形成された回路導体に防錆
処理を施した後、水素を含まないか又は水素の減圧下で
導体層に加熱処理を施すと、この加熱処理で回路導体中
の水素が発散すると同時に、加熱処理で回路導体中の結
晶欠陥が再結晶によって補完される。この結果、無電解
めっき処理で形成された回路導体は、半田付けに強い回
路導体に処理される。The circuit conductor formed by the electroless plating process is subjected to a rust-preventive process, and then the conductor layer is subjected to a heat treatment not containing hydrogen or under a reduced pressure of hydrogen. At the same time as hydrogen evolves, the heat treatment complements crystal defects in the circuit conductor by recrystallization. As a result, the circuit conductor formed by the electroless plating process is processed into a circuit conductor that is resistant to soldering.
【0010】また、回路基板の表面に形成された回路導
体の表面に無電解めっきによって導体層を形成し、この
導体層に防錆処理を行った後、水素を含まないか又は水
素の減圧下で導体層に加熱処理を施すと、この加熱処理
で導体層中の水素が発散すると同時に、加熱処理で導体
層中の結晶欠陥が再結晶によって補完される。この結
果、無電解めっき処理で形成された導体層は、半田付け
に強い導体層に処理される。Further, a conductor layer is formed on the surface of the circuit conductor formed on the surface of the circuit board by electroless plating, and after this conductor layer is subjected to a rust prevention treatment, the conductor layer contains no hydrogen or is subjected to reduced pressure of hydrogen. When the heat treatment is applied to the conductor layer, hydrogen in the conductor layer is diverged by the heat treatment, and at the same time, the crystal defects in the conductor layer are complemented by the recrystallization by the heat treatment. As a result, the conductor layer formed by the electroless plating process is processed into a conductor layer that is resistant to soldering.
【0011】[0011]
【実施例】以下、本発明を図面に示した実施例を参照し
て詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to embodiments shown in the drawings.
【0012】図1及び図2は、本発明の回路導体の処理
方法の第1実施例を示している。図1の(A)に示すよ
うに、回路基板2は、絶縁性合成樹脂、アルミナ、セラ
ミック等の絶縁材料で形成する。その表面に、無電解め
っき処理により所定の回路パターンを成す回路導体とし
ての銅層16を形成する。FIGS. 1 and 2 show a first embodiment of the method for processing a circuit conductor according to the present invention. As shown in FIG. 1A, the circuit board 2 is formed of an insulating material such as an insulating synthetic resin, alumina, or ceramic. A copper layer 16 as a circuit conductor having a predetermined circuit pattern is formed on the surface by electroless plating.
【0013】図2は、この銅層16の形成法の一例を示
しており、図2の(a)に示すように、所望の回路パタ
ーンを成すめっきレジスト層18を印刷によって形成す
る。めっきレジスト層18で覆われていない部分のパタ
ーンが、得るべき回路導体の形成部分であり、これがめ
っき処理面である。次に、図2の(b)に示すように、
この回路基板2をめっき液に浸漬し、めっきレジスト層
18から露出している回路基板2の表面に無電解めっき
処理で導体層としての回路導体である銅層16を形成す
る。即ち、銅層16が所望の回路パターンを成してい
る。そして、図2の(c)に示すように、めっきレジス
ト層18を除去すると、回路基板2の表面には所望の回
路パターンを成す回路導体としての銅層16が得られ
る。FIG. 2 shows an example of a method of forming the copper layer 16. As shown in FIG. 2A, a plating resist layer 18 having a desired circuit pattern is formed by printing. The portion of the pattern that is not covered with the plating resist layer 18 is the portion where the circuit conductor to be obtained is formed, and this is the plating surface. Next, as shown in FIG.
The circuit board 2 is immersed in a plating solution, and a copper layer 16 which is a circuit conductor as a conductor layer is formed on the surface of the circuit board 2 exposed from the plating resist layer 18 by electroless plating. That is, the copper layer 16 forms a desired circuit pattern. Then, as shown in FIG. 2C, when the plating resist layer 18 is removed, a copper layer 16 as a circuit conductor having a desired circuit pattern is obtained on the surface of the circuit board 2.
【0014】このように銅層16が形成された回路基板
2を純水を以て洗浄した後、図1の(B)に示すよう
に、銅層16の表面に防錆処理により保護膜20を形成
する。この防錆処理は室温下でアルコール系の有機物を
含有させた水溶液中に回路基板2を浸して行い、この処
理によって銅層16の表面に酸化膜からなる保護膜20
が形成される。この保護膜20を形成し、回路基板2を
純水を以て洗浄した後、80℃程度の雰囲気下で10〜
15分間程度の乾燥を行なう。After the circuit board 2 on which the copper layer 16 is formed is washed with pure water, a protective film 20 is formed on the surface of the copper layer 16 by a rust-proof treatment as shown in FIG. I do. This rust prevention treatment is performed by immersing the circuit board 2 in an aqueous solution containing an alcoholic organic substance at room temperature, and by this treatment, a protective film 20 made of an oxide film is formed on the surface of the copper layer 16.
Is formed. After this protective film 20 is formed, the circuit board 2 is washed with pure water,
Dry for about 15 minutes.
【0015】次に、銅層16に対して加熱処理、即ち、
アニーリング処理を行なう。図1の(C)に示すよう
に、例えば、真空乾燥オーブン等のチャンバ22の内部
に回路基板2を収容し、このチャンバ22内を水素を含
まないか又は水素の減圧下であって酸素を含まない雰囲
気に形成する。そして、加熱源24を駆動し、150℃
〜250℃の加熱温度を設定する。この場合、回路基板
2が合成樹脂で形成されている場合には、過熱による劣
化や損傷を防止するため、その加熱温度は回路基板2の
劣化防止に必要な値、例えば、150℃に設定する。ま
た、この加熱処理は、チャンバ22内にN2 ガス又は不
活性ガスを充満させ、その雰囲気中で行なってもよい。Next, heat treatment is performed on the copper layer 16, that is,
An annealing process is performed. As shown in FIG. 1C, for example, the circuit board 2 is housed in a chamber 22 such as a vacuum drying oven, and the inside of the chamber 22 contains no hydrogen or is supplied with oxygen under a reduced pressure of hydrogen. It is formed in an atmosphere not containing. Then, the heating source 24 is driven to 150 ° C.
Set a heating temperature of ~ 250 ° C. In this case, when the circuit board 2 is formed of a synthetic resin, the heating temperature is set to a value necessary for preventing the deterioration of the circuit board 2, for example, 150 ° C. in order to prevent deterioration and damage due to overheating. . Further, this heat treatment may be performed in an atmosphere in which the chamber 22 is filled with N 2 gas or an inert gas.
【0016】この加熱処理によって、銅層16中に含ま
れる水素Hが気化し、銅層16からチャンバ22内に適
当な吸引圧を以て放出され、適当な排出手段によってチ
ャンバ22外に除去される。このとき、加熱処理で銅層
16中の再結晶処理も同時に進行し、銅層16中の結晶
欠陥が再結晶によって補完される。また、酸素を含まな
い雰囲気中での加熱処理のため、銅層16に対して不要
な酸化が防止され、導体抵抗の増大を来すこともない。By this heat treatment, hydrogen H contained in the copper layer 16 is vaporized, released from the copper layer 16 into the chamber 22 with a suitable suction pressure, and removed from the chamber 22 by a suitable discharging means. At this time, the recrystallization process in the copper layer 16 also proceeds by the heat treatment, and the crystal defects in the copper layer 16 are complemented by the recrystallization. Further, since the heat treatment is performed in an atmosphere containing no oxygen, unnecessary oxidation of the copper layer 16 is prevented, and the conductor resistance does not increase.
【0017】このような処理方法によれば、回路基板2
の表面に無電解めっきで形成された導体層としての銅層
16中の水素Hの除去とともに結晶欠陥を補完でき、半
田付けしても半田中に含まれる錫との化合物の脆化がな
く、半田付け接続の機械的な固着強度の低下を確実に防
止でき、半田付けによる電気的な接続の信頼性を高める
ことができる。According to such a processing method, the circuit board 2
The removal of hydrogen H in the copper layer 16 as a conductor layer formed by electroless plating on the surface of the metal layer allows the crystal defects to be complemented, and even when soldered, there is no embrittlement of the compound with tin contained in the solder, It is possible to reliably prevent the mechanical bonding strength of the solder connection from lowering, and to enhance the reliability of the electrical connection by soldering.
【0018】次に、図3は、本発明の回路導体の処理方
法の第2実施例を示している。第1実施例では、回路導
体を単一の銅層16のみで構成したが、この第2実施例
は、下層導体を成す銀層26の表面に上層導体である銅
層28を形成して回路導体とした場合の処理方法であ
る。FIG. 3 shows a second embodiment of the method for processing a circuit conductor according to the present invention. In the first embodiment, the circuit conductor is constituted only by the single copper layer 16, but in the second embodiment, the circuit layer is formed by forming the copper layer 28 as the upper conductor on the surface of the silver layer 26 constituting the lower conductor. This is a processing method when a conductor is used.
【0019】図3の(A)に示すように、回路基板2の
表面に印刷やめっき処理によって所望の回路パターンを
成す下層導体として銀層26を形成する。As shown in FIG. 3A, a silver layer 26 is formed on the surface of the circuit board 2 by printing or plating as a lower conductor forming a desired circuit pattern.
【0020】次に、図3の(B)に示すように、この回
路基板2をめっき液に浸漬し、銀層26の表面に無電解
めっき処理で上層導体である導体層としての銅層28を
形成する。即ち、この実施例では、銀層26と銅層28
を以て回路導体30が形成されている。Next, as shown in FIG. 3B, the circuit board 2 is immersed in a plating solution, and the surface of the silver layer 26 is subjected to electroless plating to form a copper layer 28 serving as a conductor layer as an upper conductor. To form That is, in this embodiment, the silver layer 26 and the copper layer 28
Thus, the circuit conductor 30 is formed.
【0021】次に、この回路基板2を純水を以て洗浄し
た後、図3の(C)に示すように、銅層28の表面に防
錆処理により保護膜32を形成する。この防錆処理は、
第1実施例と同様に、室温下でアルコール系の有機物を
含有させた水溶液中に回路基板2を浸して行い、この処
理によって銅層28の表面に酸化膜を防止する保護膜3
2が形成される。この保護膜32を形成し、回路基板2
を純水を以て洗浄した後、80℃程度の雰囲気下で10
〜15分間程度の乾燥を行なう。Next, after cleaning the circuit board 2 with pure water, as shown in FIG. 3C, a protective film 32 is formed on the surface of the copper layer 28 by rustproofing. This rust prevention treatment
Similarly to the first embodiment, the circuit board 2 is immersed in an aqueous solution containing an alcoholic organic substance at room temperature, and the protection film 3 for preventing an oxide film on the surface of the copper layer 28 by this treatment is performed.
2 are formed. The protection film 32 is formed and the circuit board 2
Is washed with pure water, and then washed in an atmosphere of about 80 ° C. for 10 minutes.
Dry for about 15 minutes.
【0022】次に、銅層28に対して加熱処理、即ち、
アニーリング処理を行なう。図3の(D)に示すよう
に、第1実施例と同様に、真空乾燥オーブン等のチャン
バ22の内部に回路基板2を収容し、このチャンバ22
内を水素を含まないか又は水素の減圧下であって酸素を
含まない雰囲気に形成する。そして、加熱源24を駆動
し、150℃〜250℃の加熱温度を設定する。この場
合、回路基板2が合成樹脂で形成されている場合には、
過熱による劣化や損傷を防止するため、その加熱温度は
回路基板2の劣化防止に必要な値、例えば、150℃に
設定する。この加熱処理は、第1実施例と同様に、チャ
ンバ22内にN2 ガス又は不活性ガスを充満させ、その
雰囲気中で行なってもよい。Next, heat treatment is performed on the copper layer 28, that is,
An annealing process is performed. As shown in FIG. 3D, similarly to the first embodiment, the circuit board 2 is housed inside a chamber 22 such as a vacuum drying oven.
The inside is formed in an atmosphere containing no hydrogen or under a reduced pressure of hydrogen and containing no oxygen. Then, the heating source 24 is driven to set a heating temperature of 150 ° C. to 250 ° C. In this case, when the circuit board 2 is formed of a synthetic resin,
In order to prevent deterioration and damage due to overheating, the heating temperature is set to a value required to prevent deterioration of the circuit board 2, for example, 150 ° C. This heat treatment may be performed in the atmosphere by filling the chamber 22 with N 2 gas or an inert gas as in the first embodiment.
【0023】この加熱処理によって、銅層28中に含ま
れる水素Hは気化し、銅層28からチャンバ22内に適
当な吸引圧を以て放出され、適当な排出手段によってチ
ャンバ22外に除去される。このとき、加熱処理で銅層
28中の再結晶処理も同時に進行し、銅層28中の結晶
欠陥が再結晶によって補完される。また、酸素を含まな
い雰囲気中での加熱処理のため、銅層28の酸化が防止
できる。By this heat treatment, the hydrogen H contained in the copper layer 28 is vaporized, released from the copper layer 28 into the chamber 22 with a suitable suction pressure, and removed from the chamber 22 by a suitable discharging means. At this time, the recrystallization process in the copper layer 28 simultaneously proceeds by the heat treatment, and the crystal defects in the copper layer 28 are complemented by the recrystallization. Further, since the heat treatment is performed in an atmosphere containing no oxygen, the oxidation of the copper layer 28 can be prevented.
【0024】このような処理方法によれば、第1実施例
と同様に、銅層28中の水素の除去とともに結晶欠陥を
補完でき、半田付けしても半田中に含まれる錫との化合
物の脆化はなく、機械的な固着強度の低下を確実に防止
でき、半田付けによる電気的な接続の信頼性を高めるこ
とができる上、その脆化部分が下層導体である銀層26
と銅層28との密着強度を低下させることもないので、
回路導体30の信頼性の向上に寄与することになる。According to such a processing method, as in the first embodiment, the crystal defects can be complemented while removing the hydrogen in the copper layer 28, and even if the soldering is performed, the compound with tin contained in the solder is removed. There is no embrittlement, it is possible to reliably prevent a decrease in mechanical fixing strength, and it is possible to enhance the reliability of electrical connection by soldering. In addition, the embrittled portion is a silver layer 26 serving as a lower conductor.
Because it does not lower the adhesion strength between
This contributes to improving the reliability of the circuit conductor 30.
【0025】次に、図4及び図5は、本発明の処理方法
によって処理された回路導体の接着強度について示して
いる。実験では、図3に示すように、銀ペーストを用い
て導体層を成す銀層26を形成し、その上に無電解めっ
きによって膜厚10μmの銅層28を形成して回路導体
とし、この回路導体に対するアニーリング処理は、第1
の温度T1 を80℃、第2の温度T2 をA=250℃、
B=200℃、C=150℃、D=100℃に設定し、
そのアニーリング時間を30分、60分、90分及び1
20分として行なった後、120時間程度のエージング
処理を施した複数の試料を作成し、各試料について同一
条件で半田付けを行い、その剥離強度、即ち、接着強度
を測定した。Next, FIGS. 4 and 5 show the bonding strength of the circuit conductor processed by the processing method of the present invention. In the experiment, as shown in FIG. 3, a silver layer 26 forming a conductor layer was formed using a silver paste, and a copper layer 28 having a thickness of 10 μm was formed thereon by electroless plating to form a circuit conductor. The annealing process for the conductor is performed in the first step.
The temperature T 1 is 80 ° C., the second temperature T 2 is A = 250 ° C.,
B = 200 ° C, C = 150 ° C, D = 100 ° C,
The annealing time was 30 minutes, 60 minutes, 90 minutes and 1
After 20 minutes, a plurality of samples subjected to aging treatment for about 120 hours were prepared, and each sample was soldered under the same conditions, and the peel strength, that is, the adhesive strength was measured.
【0026】図4に示すように、加熱温度によって接着
強度が変化し、加熱時間の長さは接着強度にそれ程の影
響を与えないことが判る。即ち、加熱温度は高く設定す
ることが接着強度の増強に寄与し、アニーリング時間は
30分程度で十分であることが判る。製造効率を考えれ
ば、30分程度のアニーリング処理で十分な半田付け強
度が得られ、錫−銅金属間化合物の脆化による接続強度
の低下を防止できることが判る。As shown in FIG. 4, the adhesive strength changes depending on the heating temperature, and it can be seen that the length of the heating time does not significantly affect the adhesive strength. That is, it is understood that setting the heating temperature high contributes to the enhancement of the adhesive strength, and the annealing time of about 30 minutes is sufficient. Considering the production efficiency, it can be seen that sufficient soldering strength can be obtained by annealing treatment for about 30 minutes, and a decrease in connection strength due to embrittlement of the tin-copper intermetallic compound can be prevented.
【0027】また、図5において、A=250℃、B=
200℃、C=150℃のアニーリング処理を施した場
合、Eはアニーリング処理を施していない場合を示して
いる。この結果から明らかなように、アニーリング処理
を施したものは非アニーリング処理のものに比較して接
着強度の低下は少なく、また、処理温度が高いもの程、
接着強度の低下が少ないことが判る。即ち、回路基板の
材質等で処理温度に制約を受けない場合には、加熱温度
を高く設定してアニーリング処理を行なうことが銅層中
の水素の発散及び結晶欠陥の補完によって、半田付け強
度の低下が防止できることが判る。In FIG. 5, A = 250 ° C., B =
E indicates the case where the annealing process is performed at 200 ° C. and C = 150 ° C., and E indicates the case where the annealing process is not performed. As is clear from the results, the one subjected to the annealing treatment has a smaller decrease in the adhesive strength than the one subjected to the non-annealing treatment, and the higher the treatment temperature,
It can be seen that the decrease in adhesive strength is small. That is, if the processing temperature is not restricted by the material of the circuit board, etc., it is necessary to set the heating temperature to a high value and perform the annealing process, because of the diffusion of hydrogen in the copper layer and the complementation of crystal defects, the soldering strength is reduced. It turns out that a fall can be prevented.
【0028】なお、実施例では、導体層ないし回路導体
として銅層又は銀層と銅層の2層構造を例に取って説明
したが、本発明は、銅化合物等を導体層とする場合や他
の金属による多層導体等に適用して各種の導体層の半田
付け強度を改善できるので、銅層に限定されるものでは
ない。In the embodiment, a two-layer structure of a copper layer or a silver layer and a copper layer has been described as an example of a conductor layer or a circuit conductor. However, the present invention relates to a case where a copper compound or the like is used as a conductor layer. The present invention is not limited to the copper layer because the soldering strength of various conductor layers can be improved by applying the invention to a multilayer conductor made of another metal.
【0029】[0029]
【発明の効果】以上説明したように、本発明によれば、
加熱処理で回路導体や回路導体の表面層を覆う導体層中
の水素を除去できるとともに、結晶欠陥を再結晶によっ
て補完できるので、半田付け強度を高くでき、信頼性の
高い回路導体を提供することができる。As described above, according to the present invention,
The heat treatment can remove hydrogen in the circuit conductor and the conductor layer covering the surface layer of the circuit conductor, and can complement crystal defects by recrystallization, so that soldering strength can be increased and a highly reliable circuit conductor can be provided. Can be.
【図1】本発明の回路導体の処理方法の第1実施例を示
す断面図である。FIG. 1 is a sectional view showing a first embodiment of a method for processing a circuit conductor according to the present invention.
【図2】図1に示した回路導体の形成方法を示す断面図
である。FIG. 2 is a cross-sectional view showing a method of forming the circuit conductor shown in FIG.
【図3】本発明の回路導体の処理方法の第2実施例を示
す断面図である。FIG. 3 is a sectional view showing a second embodiment of the method for processing a circuit conductor according to the present invention.
【図4】本発明の回路導体の処理方法によって処理され
た回路導体に対する半田の接着強度を示す図である。FIG. 4 is a view showing the adhesive strength of solder to a circuit conductor processed by the circuit conductor processing method of the present invention.
【図5】本発明の回路導体の処理方法によって処理され
た回路導体に対する半田の接着強度を示す図である。FIG. 5 is a diagram showing the adhesive strength of solder to a circuit conductor processed by the circuit conductor processing method of the present invention.
【図6】従来の回路導体として形成された銅層と半田層
とで形成された錫−銅金属間化合物の生成を示す断面図
である。FIG. 6 is a cross-sectional view showing the formation of a tin-copper intermetallic compound formed by a conventional copper layer formed as a circuit conductor and a solder layer.
【図7】従来の回路導体の表面に形成された銅層と半田
層とで形成された錫−銅金属間化合物の生成を示す断面
図である。FIG. 7 is a cross-sectional view showing the formation of a tin-copper intermetallic compound formed by a copper layer and a solder layer formed on the surface of a conventional circuit conductor.
2 回路基板 16 銅層(回路導体) 20,32 保護膜 28 銅層(導体層) 2 circuit board 16 copper layer (circuit conductor) 20, 32 protective film 28 copper layer (conductor layer)
Claims (2)
回路導体を形成し、この回路導体に防錆処理を行った
後、水素を含まないか又は水素の減圧下で前記回路導体
に加熱処理を施すことを特徴とする回路導体の処理方
法。1. A circuit conductor is formed on a surface of a circuit board by electroless plating, and after a rustproofing treatment is performed on the circuit conductor, a heat treatment is performed on the circuit conductor without hydrogen or under reduced pressure of hydrogen. A method for treating a circuit conductor, the method comprising:
表面に無電解めっきによって導体層を形成し、この導体
層に防錆処理を行った後、水素を含まないか又は水素の
減圧下で前記導体層に加熱処理を施すことを特徴とする
回路導体の処理方法。2. A conductor layer is formed on the surface of a lower conductor formed on the surface of a circuit board by electroless plating, and after rust prevention treatment is performed on the conductor layer, the conductor layer contains no hydrogen or is subjected to reduced pressure of hydrogen. And subjecting said conductor layer to a heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16215992A JP3214066B2 (en) | 1992-05-27 | 1992-05-27 | How to treat circuit conductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16215992A JP3214066B2 (en) | 1992-05-27 | 1992-05-27 | How to treat circuit conductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05335727A JPH05335727A (en) | 1993-12-17 |
| JP3214066B2 true JP3214066B2 (en) | 2001-10-02 |
Family
ID=15749156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16215992A Expired - Fee Related JP3214066B2 (en) | 1992-05-27 | 1992-05-27 | How to treat circuit conductors |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3214066B2 (en) |
-
1992
- 1992-05-27 JP JP16215992A patent/JP3214066B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05335727A (en) | 1993-12-17 |
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