JP3214367B2 - Method for manufacturing semiconductor light emitting device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention is a group III nitride semiconductor (Al _X In _Y Ga _1-X over Y N; X = 0, Y = 0, X = Y
= 0 (including 0). This semiconductor light emitting device can be used, for example, as a light emitting diode or a laser diode.

[0002]

2. Description of the Related Art As a light emitting device in the visible light short wavelength region, a device using a compound semiconductor is known. Above all, group III nitride semiconductors have attracted particular attention because they are of direct transition type and have high luminous efficiency and emit blue light, which is one of the three primary colors of light. Such a light-emitting element has a configuration in which, for example, a buffer layer, an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are sequentially stacked on a sapphire substrate.

In such a light emitting device, since the sapphire substrate is an insulator, a p-type semiconductor layer and an n-type
The electrodes cannot be mounted so as to sandwich the conductive semiconductor layer. Therefore, it is necessary to form electrodes on the p-conductivity type and n-conductivity type semiconductor layers on the upper surface of the element, that is, the surface without the sapphire substrate. For this purpose, it is necessary to separately form a step of forming a groove for insulating separation and a step of forming holes for exposing the n-type semiconductor layer in the p-type semiconductor layer and the light emitting layer. When an electrode is connected to the upper surface of the n-type semiconductor layer, a current flows in parallel with the n-type semiconductor layer. For this reason, the resistance becomes large, causing unnecessary voltage drop and heat generation.

Since the sapphire substrate is expensive, if the removed sapphire substrate can be reused, the manufacturing cost of the device can be reduced. Further, when the sapphire substrate is eliminated, each element can be easily separated from the state of the wafer by using the cleavage plane of the semiconductor layer. Further, when the light emitting element is mounted on the cup-shaped reflector, an n-type semiconductor layer of the light emitting diode can be directly connected to the bottom surface thereof. Since the reflector is usually formed of a conductive material such as silver, wire bonding to the element only needs to be performed on the p-type semiconductor layer.
In the conventional light emitting device, since the sapphire substrate is in contact with the bottom surface of the reflector, it is necessary to perform wire bonding on each of the p-type and n-type semiconductor layers.

Therefore, Japanese Patent Application Laid-Open No. 7-202265 discloses a technique for removing an sapphire substrate, which has been a problem as described above, from a semiconductor structure by using an intermediate layer made of zinc oxide. According to this technique, first, an intermediate layer made of zinc oxide is formed on both surfaces of a sapphire substrate, and two semiconductor layers made of GaN formed by a halide method are formed on the intermediate layer. Then, only the intermediate layer is removed by wet etching using a solution for etching only zinc oxide. Thereby, the sapphire substrate is separated from the semiconductor layer. Using the semiconductor layer formed by the halide method as a substrate, a light emitting diode is formed thereon by a metal organic compound vapor phase epitaxy method (hereinafter abbreviated as “MOVPE method”).

[0006]

However, in the above-mentioned conventional semiconductor light emitting device, the method of manufacturing a semiconductor layer serving as a substrate (halide method) and the method of manufacturing a semiconductor layer serving as a light emitting element body (MOVPE method) are different. I have. Therefore, lattice distortion and defects may occur between the semiconductor layer serving as the substrate and the semiconductor layer serving as the light emitting element body. These distortions and defects may cause a reduction in the luminous efficiency of the light emitting element.

[0007]

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems. That is, according to one aspect of the present invention, a group III nitride semiconductor (Al _X In _Y Ga _{1 -X-Y}
N; including X = 0, Y = 0, and X = Y = 0), wherein a first layer made of zinc oxide is formed on at least one surface of a sapphire substrate;
A p-type first semiconductor layer or an I-type semi-insulating layer is formed on the first layer by MOVPE, and an n-type second semiconductor layer is formed on the first semiconductor layer. A conductive reinforcing layer is formed on the second semiconductor layer by MOVPE, and then the first layer made of zinc oxide and the sapphire substrate are separated from the first semiconductor layer.

When the semiconductor light emitting device is manufactured in this manner, the semiconductor layer of the light emitting device body, that is, the first semiconductor layer of the p-conductivity type or the semi-insulating layer of the I type is formed on the zinc oxide by MOV.
A second semiconductor layer of an n-conductivity type is similarly formed by the PE method. Zinc oxide has a lattice constant close to that of a group III nitride semiconductor, and has a function as a buffer layer for growing a high-quality group III nitride semiconductor on a sapphire substrate, as described in JP-A-7-202265. It is on the street. Therefore, the crystal structure of the semiconductor layer of the light emitting element body is as designed, and there is almost no possibility that distortion or defects will occur there. Therefore, a light emitting element with high luminous efficiency can be manufactured. The substrate made of sapphire has been removed from the light emitting element, but a reinforcing layer has been formed instead. Therefore,
The light-emitting element has sufficient mechanical strength as a whole.

[0009] According to another aspect of the present invention, III
Group nitride semiconductor (Al _X In _Y Ga _{1 -X Y} N; X = 0, Y
= 0, X = Y = 0), comprising forming a first layer made of zinc oxide on at least one surface of a sapphire substrate, and forming a first layer on the first layer. Forming a first semiconductor layer of an n-conductivity type by MOVPE, forming a conductive reinforcing layer on the first semiconductor layer, and then forming the first layer and the first layer from the first semiconductor layer. The sapphire substrate is separated, and a p-type second semiconductor layer or an I-type semi-insulating layer is formed by MOVPE on a surface of the first semiconductor layer from which the first layer has been removed.

Even when the semiconductor light emitting device is manufactured in this manner, the semiconductor layer of the light emitting device main body, in this case, the first semiconductor layer of the n-conductivity type is formed directly on the zinc oxide by the MOVPE method. Thus, a p-type second semiconductor layer or an I-type semi-insulating layer is formed. Therefore, the crystal structure of the semiconductor layer of the light emitting element body is as designed, and there is almost no possibility that distortion or defects will occur there. Therefore, a light emitting element with high luminous efficiency can be manufactured.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings. FIG. 1 is a sectional view showing a light emitting diode 1 according to one embodiment of the present invention. This light emitting diode 1 includes a light emitting element body 5 and a reinforcing layer 6. The electrode pad 7 is attached to the light emitting element body 5. The reinforcing layer 6 has conductivity and does not require an electrode pad.

The light emitting element body 5 includes a p-type first semiconductor layer 2 made of GaN doped with magnesium, a light emitting layer 3 made of InGaN doped with silicon and zinc, and an n made of GaN doped with silicon. A conductive second semiconductor layer 4. The thickness of each layer is
For example: First semiconductor layer 2: 1000 nm Light emitting layer 3: 500 nm Second semiconductor layer 4: 2200 nm

The p-type first semiconductor layer 2 may have a two-layer structure including a low hole concentration p layer on the light emitting layer side and a high hole concentration p ⁺ layer on the electrode side. The light emitting layer 3 is not limited to the double hetero type shown in FIG. 1, but may be a single hetero type, a super lattice type or the like.
Further, the light emitting layer 3 is omitted, and the light emitting element body is a so-called p-type.
An n-homozygous type can also be used. Al _X In _Y Ga with a wide band gap doped with an acceptor such as magnesium between the light emitting layer 3 and the p-type first semiconductor layer 2
_{A 1-XYN} (including X = 0, Y = 0, X = Y = 0) layer can be interposed. This is to prevent electrons injected into the light emitting layer 3 from diffusing into the first semiconductor layer 2. The n-type second semiconductor layer 4 may have a two-layer structure including a low electron concentration n layer on the light emitting layer side and a high electron concentration n ⁺ layer on the reinforcing layer 6 side.

The light emitting element body 5 may be a so-called MIS type light emitting element comprising an I-type semi-insulating layer and an n-type second semiconductor layer.

The reinforcing layer 6 is made of n-type GaN. The reinforcing layer 6 has conductivity. For example, GaN formed by the halide method has n-conductivity conductivity without using a dopant. The thickness of the reinforcing layer 6 is
From the viewpoint of mechanically reinforcing the light emitting element body 5, 100 μm
It is preferably at least m.

The reinforcing layer 6 itself has a sufficient mechanical strength, as long as it is joined to the n-type second semiconductor layer 4 with a low interlayer electric resistance and a sufficient mechanical strength. The material, thickness, and bonding method for the second semiconductor layer 4 are not particularly limited. As the reinforcing layer 6, II
Group I nitride semiconductor Al _X In _Y Ga _1-XY N (X = 0, Y = 0, X = Y =
0 (including 0) can be used.

Next, a method of manufacturing the light emitting diode 1 of FIG. 1 will be described. (Step 1) As shown in FIG. 2, an intermediate layer 9 made of zinc oxide is formed on a sapphire substrate 8 by sputtering. The thickness of the intermediate layer 9 is preferably 50 to 200 nm.

(Step 2) Subsequently, the p-type first semiconductor layer 2, the light-emitting layer 3, and the n-type second semiconductor layer 2 are formed on the intermediate layer 9 by a well-known method such as MOVPE or MOCVD. The semiconductor layer 4 is crystal-grown in order, and the light emitting element body 5 is formed.
To form For example, JP-A-63-188977, JP-A-4-163969, JP-A-6-283
825, JP-A-6-268257, and the like.

(Step 3) Then, a reinforcing layer 6 is formed directly on the p-type second semiconductor layer 4 by a halide method. The halide method was adopted because the crystal growth rate was high and the amount of heat applied to the device could be reduced as much as possible. Of course, the reinforcing layer can be formed by another method, for example, the MOVPE method. The first semiconductor layer 2 can also be made to be of p-conduction type by utilizing heat when the halide method is performed.

(Step 4) Thereafter, as shown in FIG. 3, the substrate 8 and the intermediate layer 9 are separated from the light emitting element body 5. The separation is performed by selectively wet etching the intermediate layer 9.

(Step 5) An electrode 7 is formed by vapor deposition on the surface of the light emitting element body 5 from which the intermediate layer 9 has been peeled off.
The light emitting diode 1 has the configuration shown in FIG.

Steps 1 and 4 are described in detail in Japanese Patent Application Laid-Open No. 7-202265 and Appl. Phys.
t. 61 (22). 30 November 1992. pp 2688-2690.

FIG. 4 shows a light emitting diode 11 according to another embodiment of the present invention. The same layers as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted. In this light emitting diode 11, the reinforcing layer 16 is made of silicon single crystal,
It is joined to the light emitting element body 5 by a solder 12. It is preferable that the thickness of the reinforcing layer 16 be 100 to 600 μm. The reinforcing layer 16 is cut out from a silicon ingot or a silicon wafer by an ordinary method. Reinforcement layer 16
Is not particularly limited as long as it has mechanical strength and appropriate conductivity.

The solder 12 is made of solder and has a reinforcing layer 16
It is preferably provided on the entire surface between the first semiconductor layer and the second semiconductor layer 4. This is to make the current density of the light emitting layer 3 uniform over the entire area. In this embodiment, the electrode pad 18 is provided on the reinforcing layer 16.

The light emitting diode 11 shown in FIG. 4 can be formed in the same manner as that of FIG. That is, the zinc oxide intermediate layer and the sapphire substrate are separated from the light emitting element body 5, and then the reinforcing layer 16 is bonded to the light emitting element body 5 by the solder 12.

FIG. 5 shows a light emitting diode 21 according to another embodiment of the present invention. This light emitting diode 2
In 1, in the light emitting element body 50, the reinforcing layer 26 is joined to the n-type first semiconductor layer 20. Reinforcement layer 2
The specifications of 6 are the same as those of the reinforcing layer 6 of FIG. And
On the upper surface of the p-type second semiconductor layer 40, a transparent electrode 27 made of gold over substantially the entire area is deposited, and further, an electrode pad 28 made of gold is attached.

Next, a method for forming the light emitting diode 21 will be described. (Step 1) As shown in FIG. 6, an intermediate layer 9 of zinc oxide is formed on one surface of a sapphire substrate 8 by sputtering. Then, the n-type first semiconductor layer 20 is grown on the intermediate layer 9 by MOVPE. Further, a reinforcing layer 26 made of n-type GaN is grown on the first semiconductor layer by a halide method to form the structure shown in FIG.

(Step 2) Thereafter, as shown in FIG. 7, the intermediate layer 9 and the substrate 8 are removed from the first semiconductor layer 20 by wet etching.

Thereafter, as shown in FIG. 8, a light emitting layer 30 is grown on the first semiconductor layer 20 by MOVPE. In the same manner, the p-type second semiconductor layer 40 is crystal-grown, and the transparent electrode 27 and the electrode pad 28 are further evaporated to form the light emitting diode 21 having the configuration shown in FIG.
Get.

This light emitting diode 21 is mounted on a cup-shaped reflector 60 as shown in FIG. The reflection plate 60 is formed of a conductive material such as silver. Therefore,
By joining the conductive reinforcing layer 26 of the light emitting diode 21 to the bottom surface of the reflecting plate 60, one connection to the element may be made to the reflecting plate 60, and the work is easy. Other connection to the light emitting diode 21 is performed by wire bonding to the electrode 28 as in the conventional case.

Since the light emitting diode 21 has its mechanical strength secured by the reinforcing layer 26, it is not destroyed by an impact when the light emitting diode 21 is mounted on the reflector 60.

[0032]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. 6 to 8, taking the light emitting diode 21 of FIG. 5 as an example. Since the configuration of the light emitting diode 21 is as described above, specific manufacturing conditions will be described here.

(Step 1) A sapphire substrate 8 having a plane orientation in the (0001) direction is prepared, and the sapphire substrate 8 is washed with an organic chemical such as methanol.

(Step 2) The sapphire substrate 8 is set in a chamber of a general RF sputtering apparatus,
Vacuum the chamber. Thereafter, a zinc oxide target is sputtered with a mixed gas of argon and oxygen to form an intermediate layer 9 (first layer) made of zinc oxide and having a thickness of 100 nm on one surface of the sapphire substrate 8.

(Step 3) The substrate is mounted on a susceptor of a general-purpose vapor phase growth apparatus (see Japanese Patent Publication No. 5-73251), the temperature is maintained at 1150 ° C., and TMG (trimethyl gallium) is added at 1.12 × 10 5 ^A first semiconductor layer 20 made of n-GaN doped with silicon having a thickness of about 2200 nm and an electron concentration of 2 × 10 ¹⁸ / cm ³ is formed by introducing −4 mol / min and ammonia at 10 liter / min.

(Step 4) The substrate is set in the chamber of the halide apparatus, and the temperature is maintained at 1090 ° C. HCl was added to Ga heated to 850 ° C. at 30 cc / min.
GaCl obtained by the circulation is introduced into the chamber. At the same time, 400 cc / min of ammonia and 3 liter / min of nitrogen gas as a carrier gas are introduced, and a reinforcing layer 26 made of n-GaN having a thickness of 100 μm is formed on the first semiconductor layer 20. As a result, the structure shown in FIG. 6 is obtained.

(Step 5) The substrate is immersed in a hydrochloric acid-based etchant (specifically, aqua regia), and the temperature is maintained at 60 ° C.
Perform ultrasonic cleaning for 10 minutes. Thereby, as shown in FIG. 7, the intermediate layer 9 and the sapphire substrate 8 are separated from the first semiconductor layer 20.

(Step 6) The first line shown by a solid line in FIG.
The semiconductor layer 20 and the reinforcing layer 26 are mounted again on the vapor deposition apparatus described above, the temperature is maintained at 850 ° C., and N ₂ is reduced to 20 lite.
r / min, 1.53 10liter / min , the TMG and NH ₃ X 1
^0-4 mol / min, TMI (trimethylindium) in 0.
02 X 10 ^{over 4 mol / min, DEZ 10 X} 10 ^{over 8} mol / mi of the (diethyl zinc) 2 X 10 ^{over 7} mol / min and a silane
n is introduced to form a light emitting layer 30 made of zinc and silicon doped In _0.05 Ga _0.95 N with a thickness of about 500 nm.
reference). The concentration of zinc in this light emitting layer was 1 × 10 ¹⁸
/ Cm ³ , and the concentration of silicon is 1 × 10 ¹⁸ / cm ³ .

(Step 7) Next, the temperature is maintained at 1000 ° C., N ₂ is 20 liter / min, and NH ₃ is 10 liter / mi.
n, the TMG 1.12 X 10 ^{over 4} mol / min, CP ₂ Mg
(Biscyclopentadienyl magnesium) 2 X 1
0 ^{over 4} mol / min was introduced to form a second semiconductor layer 40 made of magnesium-doped GaN having a thickness of about 200 nm.
The concentration of magnesium in the second semiconductor layer 40 is 1 × 10 ²⁰ / cm ³ . In this state, the second semiconductor layer 40 is a high-resistance semi-insulator.

(Step 8) Thereafter, the second semiconductor layer 40 is uniformly irradiated with an electron beam using an electron beam irradiation apparatus. The irradiation conditions of the electron beam were as follows: acceleration voltage about 10 kV, sample current 1 μA, beam moving speed 0.2 mm / sec, beam diameter 60
Myuemufai, a vacuum degree of 5.0 X 10 ^{over 5} Torr. By such electron beam irradiation, the second semiconductor layer 40 becomes a desired p-conduction type.

(Step 9) And the transparent electrode 2 made of gold
7 is deposited on the second semiconductor layer 40, and the first
Of the electrode pad 28 is deposited. Thereafter, the bulk is cut out by a known method to obtain a light emitting diode 21 having a configuration shown in FIG.

[0042]

As described above, in the light emitting device of the present invention, the first semiconductor layer of the light emitting device main body is formed on the zinc oxide by the M layer.
The second semiconductor layer is formed by the OVPE method, and similarly, the second semiconductor layer is formed. Zinc oxide has a lattice constant close to that of a group III nitride semiconductor, and has a function as a buffer layer for growing a high-quality group III nitride semiconductor on a sapphire substrate.
Therefore, the crystal structure of the semiconductor layer of the light emitting element body is as designed, and there is almost no possibility that a distortion or a defect will occur there. Therefore, a light emitting element with high luminous efficiency can be manufactured.

The present invention is not limited to the description of the above-described embodiments and examples, and includes various modifications which can be made by those skilled in the art without departing from the scope of the claims.

The following items are disclosed below. (1) Group III nitride semiconductor (Al _X In _Y Ga _1-X-Y N; X
= 0, Y = 0, and X = Y = 0), comprising forming a first layer made of zinc oxide on at least one surface of a sapphire substrate; A first semiconductor layer or an I-type semi-insulating layer of a light-emitting element is formed on the layer by a metalorganic compound vapor deposition method, and the first layer made of zinc oxide and the sapphire substrate are placed on the first A method for manufacturing a semiconductor light emitting device, wherein the method is separated from a semiconductor layer or the I type semi-insulating layer.

(2) Group III nitride semiconductor (Al _X In _Y Ga
_1-XYN ; X = 0, Y = 0, and X = Y = 0), wherein at least one surface of the sapphire substrate is made of zinc oxide. Forming a layer, forming an n-conductivity-type first semiconductor layer on the first layer by metalorganic compound vapor deposition, and forming a p-conductivity-type second semiconductor layer on the first semiconductor layer. A semiconductor layer or an I-type semi-insulating layer is formed by metalorganic compound vapor phase epitaxy, and a conductive silicon single crystal is joined on the second semiconductor layer by a conductive solder, and then oxidized. A method for manufacturing a semiconductor light emitting device, wherein the first layer made of zinc and the sapphire substrate are separated from the first semiconductor layer.

(3) Group III nitride semiconductor (Al _X In _Y Ga
_1-XYN ; X = 0, Y = 0, and X = Y = 0), wherein at least one surface of the sapphire substrate is made of zinc oxide. A p-type first semiconductor layer or an I-type semi-insulating layer is formed on the first layer by an organometallic compound vapor deposition method, and a layer is formed on the first semiconductor layer. Forming a conductive reinforcing layer, then separating the first layer and the sapphire substrate from the first semiconductor layer or the I-type semi-insulating layer,
An n-conductivity-type second semiconductor layer is formed by metalorganic chemical vapor deposition on a surface of the first semiconductor layer or the semi-insulating layer from which the first layer has been removed. A method for manufacturing a semiconductor light emitting device.

(4) Group III nitride semiconductor (Al _X In _Y Ga
_1-XYN ; X = 0, Y = 0, and X = Y = 0), wherein at least one surface of the sapphire substrate is made of zinc oxide. A first semiconductor layer of a first conductivity type of the light emitting element is formed on the first layer by a metalorganic compound vapor deposition method, and a second semiconductor layer is formed on the first semiconductor layer. A conductive second semiconductor layer is also formed by metalorganic vapor phase epitaxy, and then the first layer made of zinc oxide and the sapphire substrate are removed from the first semiconductor layer.
A method for manufacturing a semiconductor light emitting device, comprising: separating a semiconductor light emitting device from a semiconductor layer.

(5) Group III nitride semiconductor (Al _X In _Y Ga
_1-XYN ; X = 0, Y = 0, and X = Y = 0), wherein at least one surface of the sapphire substrate is made of zinc oxide. A plurality of semiconductor layers forming a light emitting diode directly on the first layer by a metalorganic compound vapor deposition method, and thereafter, the first layer made of zinc oxide and the sapphire substrate Is separated from the first semiconductor layer.

[Brief description of the drawings]

FIG. 1 is a sectional view of a semiconductor light emitting device according to one embodiment of the present invention.

FIG. 2 is a sectional view showing the method of manufacturing the semiconductor light emitting device of FIG. 1;

FIG. 3 is a sectional view showing the method of manufacturing the semiconductor light emitting device of FIG. 1;

FIG. 4 is a sectional view of a semiconductor light emitting device according to another embodiment of the present invention.

FIG. 5 is a sectional view of a semiconductor light emitting device according to another embodiment of the present invention.

FIG. 6 is a view showing a method of manufacturing the semiconductor light emitting device of FIG. 5;

FIG. 7 is a view showing a method of manufacturing the semiconductor light emitting device of FIG. 5;

FIG. 8 is a diagram showing a method for manufacturing the semiconductor light emitting device of FIG.

FIG. 9 is a perspective view showing a state where the semiconductor element of FIG. 5 is attached to a reflector.

[Explanation of symbols]

 1, 11, 21 Semiconductor light-emitting device 2, 40 p-type semiconductor layer 3, 30 light-emitting layer 4, 20 n-type semiconductor layer 5, 50 light-emitting device body 6, 16, 26 reinforcing layer 7 electrode 8 sapphire substrate 9 Zinc oxide layer

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-9-307188 (JP, A) JP-A-7-187892 (JP, A) JP-A-7-273367 (JP, A) JP-A-7-187 202265 (JP, A) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01S 5/00-5/50 H01L 33/00 JICST file (JOIS)

Claims (5)

(57) [Claims] 1. A group III nitride semiconductor (Al _x In _Y Ga)
_1-XYN ; X = 0, Y = 0, and X = Y = 0), wherein at least one surface of the sapphire substrate is made of zinc oxide. Forming a layer, forming a p-conductivity-type first semiconductor layer or an I-type semi-insulating layer on the first layer by metalorganic compound vapor deposition, and forming a layer on the first semiconductor layer. forming a second semiconductor layer of n-conductivity type by metalorganic compound vapor deposition, forming a conductive reinforcing layer on the second semiconductor layer, and then forming the first layer of zinc oxide And separating the sapphire substrate from the first semiconductor layer. 2. The reinforcing layer is formed of an n-conductivity type group III nitride semiconductor (Al _X In _Y Ga _{1 -XY} N; X = 0, Y = 0, X =
2. The method according to claim 1, wherein the reinforcing layer is formed on the second semiconductor layer by a halide method. 3. 3. The method according to claim 1, wherein the reinforcing layer is made of a silicon crystal, and the reinforcing layer is bonded on the second semiconductor layer by soldering. 4. A group III nitride semiconductor (Al _X In _Y Ga)
_1-XYN ; X = 0, Y = 0, and X = Y = 0), wherein at least one surface of the sapphire substrate is made of zinc oxide. Forming a layer, forming an n-conductivity-type first semiconductor layer on the first layer by metalorganic compound vapor deposition, and forming a conductive reinforcing layer on the first semiconductor layer. Then, the first layer and the sapphire substrate are separated from the first semiconductor layer, and a second p-type semiconductor layer is formed on a surface of the first semiconductor layer from which the first layer has been removed. A method for manufacturing a semiconductor light emitting device, wherein a semiconductor layer or an I-type semi-insulating layer is formed by metalorganic compound vapor deposition. 5. The reinforcing layer is formed of an n-conductivity type group III nitride semiconductor (Al _X In _Y Ga _{1 -XY} N; X = 0, Y = 0, X =
5. The method according to claim 4, wherein the reinforcing layer is formed on the first semiconductor layer by a halide method. 5.