JP3214738B2 - Field emission cathode device and method for cleaning the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a field emission cathode device, and more particularly to a field emission cathode device having a plurality of cathodes arranged in a matrix.

In a field emission cathode device, a large electric field is applied to a conductor surface to deform a potential barrier on the cathode surface, and electrons in the conductor are taken out by a tunnel effect. To this end, the field emission cathode device includes an electron beam source including a cathode to which a negative voltage is applied, and a gate electrode formed close to the cathode and applying a large electric field thereto,
The emitted electron beam is captured by the anode electrode after acceleration. The electron beam source having such a configuration can be formed to a size of about several microns by a fine processing technique generally used in semiconductor manufacturing technology. In other words,
It is easily possible to form a fine electron beam source in a matrix over a wide area by microfabrication technology,
The field emission cathode device having such a configuration is expected to be applied to a high-speed arithmetic element, a high-speed and high-luminance flat display, and the like.

[0003]

2. Description of the Related Art FIG. 8 is a perspective view schematically showing a conventional field emission cathode device.

Referring to FIG. 8, a field emission cathode device is formed on an insulating substrate 10 having an insulating layer 11 formed on an upper main surface thereof, and a first main body on a lower main surface of the insulating layer 11. A plurality of cathode electrodes 12 are formed in parallel in each direction.
In addition, a plurality of gate electrodes are formed on the upper main surface of the insulator layer 11 so as to extend in a direction substantially perpendicular to the first direction and also in parallel with each other. further,
In the insulator layer 11, an electron beam source 14 is formed corresponding to a portion where the cathode electrode 12 and the gate electrode 13 intersect. In the illustrated example, the electron beam source 14 is composed of a plurality of electron beam source elements. Further, the entire apparatus of FIG. 8 is sealed in a vacuum vessel (not shown).

FIG. 9 is an enlarged view showing one electron beam source element in FIG.

Referring to FIG. 9, an electron beam source element 14 has a through-hole formed in an insulator layer 11 typically made of SiO ₂ so as to correspond to an intersection between the cathode electrode 12 and the gate electrode 13. The emitter tip 15 is formed in the hole 11a and sharply pointed in a conical shape. The emitter tip 15 is typically made of Mo and is formed on the cathode electrode 12, while the gate electrode extends from the side wall of the through hole 11a toward the emitter tip 15 as shown in FIG. Form a narrow gap between them. Thus, a large electric field is formed between the gate electrode 13 and the emitter tip 15 by applying a positive voltage to the gate electrode 13 and a negative voltage to the cathode electrode 12. Such an electric field deforms the potential barrier on the surface of the emitter tip 15, and the electrons in the emitter tip 15 can pass through the potential barrier and exit the emitter 15 due to the tunnel effect. The electrons emitted in this manner are accelerated by a positive voltage applied to an anode (not shown in FIGS. 8 and 9) provided to face the substrate 10 and are captured at the anode. If a display panel coated with a fluorescent substance is provided around the anode, a visible image is formed on the display panel according to the pattern of the emitted electron beam. For example, the anode may be formed of a transparent conductive material, and the anode may be coated with a fluorescent substance.

[0007]

By the way, in such a field emission cathode device, when the emitter tip 15 adsorbs a volatile substance such as a gas, the emission characteristic of the electron beam is deteriorated. For this reason, in the field emission cathode device, it is particularly preferable to perform the cleaning or cleaning process of the emitter tip 15 at a predetermined interval or every time the device is started. Generally, in an electron tube, a getter for gas adsorption is provided in a vacuum vessel including a field emission cathode device, but in a field emission cathode device that does not use thermoelectrons, it is generally necessary to provide a getter only in a container. Insufficient cleaning.
In fact, in the field emission cathode device shown in FIG. 1, it is necessary to heat the entire device with an external heat source in order to perform the emitter tip cleaning process by thermionic emission. However, such a configuration is generally provided in an electronic device. Impossible.

FIG. 10 is a diagram showing a basic application of the present application, Japanese Patent Application No. Hei.
Unexamined Japanese Patent Publication No. Hei 4-220 published after the application for -299343
38 shows a step of cleaning the emitter tip 15 in the field emission cathode device described in 38. In FIG. 10, the substrate 10 is omitted for simplicity. In this traditional method,
An excitation voltage is applied between a pair of adjacent electron beam sources 14a and 14b, for example, the electron beam source 14a emits from the electron beam source 14a.
An electron beam reaching b is formed. As a result, the electron beam source 14b
The volatile contaminants adsorbed on the emitter tip inside are vaporized by the energy of the electron beam and are absorbed by the getter provided in the container.

Referring to FIG. 10, a negative voltage is applied to the cathode electrode 12a in the electron beam source 14a, while a positive voltage is applied to the cathode electrode 12b in the adjacent electron beam source 14b. As a result, a large voltage is applied between the emitter tip 15a formed on the cathode electrode 12a and the emitter tip 15b formed on the cathode electrode 12b. When the value reaches a sufficient value, an electron beam is formed from the emitter tip 15a toward the emitter tip 15b, and the energy of the electron beam vaporizes the volatile substance on the emitter tip 15b.

[0010] On the other hand, the above-mentioned known example does not mention the voltage applied to the anode when performing such a cleaning treatment, but generally, a positive voltage is generally applied to the anode. FIG. 11 shows a potential distribution when a positive voltage is applied to the anode in the electron beam source as shown in FIG. However, in FIG. 11, the left and right are interchanged with FIG. In the calculation of FIG. 11, the gate electrodes 13a, 13
b is all assumed to be grounded.

As can be seen from FIG. 11, when a positive voltage is applied to the anode, even if a positive voltage is applied to the emitter tip 15a, electrons emitted from the emitter tip 15b are mainly attracted to the anode electrode. That is, it hardly reaches the emitter tip 15a. In other words, it is considered that the voltage applied to the anode electrode provided to face the electron beam source when performing the cleaning process has an essential effect on the efficiency of the cleaning process.

SUMMARY OF THE INVENTION In general, an object of the present invention is to provide a new and useful field emission cathode device and a method for cleaning the same in view of the above-mentioned prior art.

Another more specific object of the present invention is to provide a field emission cathode device capable of efficiently cleaning and a method of cleaning the same.

[0014]

SUMMARY OF THE INVENTION It is an object of the present invention to achieve the above object by providing a cathode, to which a cathode voltage is applied and which emits electrons by a field emission effect, and a predetermined gate voltage formed close to the cathode. And an electron beam source array formed by arranging a plurality of electron beam sources formed by arranging a plurality of electron beam generating elements constituted by a gate for emitting electrons from the cathode by a field emission effect. A plurality of anode electrode elements are disposed so as to face a plurality of electron beam source groups in the electron beam source array, and a predetermined anode voltage is applied to the electron beam sources in the electron beam source array. an anode for accelerating and capture the emitted electrons from; the electrons emitted from the electron beam source in the electron beam source array, and an electron-repelling means for biasing in the other direction of the electron beam source, the electron The emitting means includes a field emission cathode device including a voltage source for applying a predetermined negative voltage to the anode, or a cathode to which a cathode voltage is applied and emits electrons by a field emission effect; An electron beam source array formed by arranging a plurality of electron beam generating elements formed in close proximity to each other and configured to apply a predetermined gate voltage to discharge electrons from the cathode by a field emission effect; And an anode electrode formed to face the electron beam source array, the anode electrode being applied with a predetermined positive anode voltage to accelerate and capture electrons emitted from the cathode in the electron beam source array. In a cathode device, a method for cleaning a field emission cathode device in which the cathode is cleaned by irradiating an electron beam from one cathode to another cathode. Applying a predetermined excitation voltage between a pair of cathodes in the electron beam source array to form an electron beam so as to connect the pair of cathodes; and applying a negative voltage to the anode electrode substantially simultaneously with the step. A step of applying a voltage, or a method in which a cathode voltage is applied, a cathode that emits electrons by a field emission effect, and a predetermined gate voltage that is formed close to the cathode and is applied. An electron beam source array formed by arranging a plurality of electron beam generating elements constituted by a gate for emitting electrons from the cathode by a field emission effect, and the electron beam generating element in the electron beam source array And a plurality of anode electrode elements arranged in a row, and a predetermined positive anode voltage is applied to the front side of the electron beam source array. A field emission cathode device having an anode for accelerating and capturing electrons emitted from the cathode, wherein the field emission cathode device cleans the cathode by irradiating an electron beam from one cathode to another cathode. In the method, a pair of a first electron beam generating element and a second electron beam generating element is selected from the electron beam source array, and a cathode in the first electron beam generating element is selected. Forming an electron beam so as to connect the pair of cathodes by applying a predetermined excitation voltage between the plurality of cathodes in the second electron beam generating element, and substantially simultaneously with the step, Applying a different negative voltage to the anode electrode element.

[0015]

According to the first feature of the present invention, a negative voltage is applied to an anode electrode to which a positive voltage is originally applied during cleaning with an electron beam. Since it reaches the other cathode without being absorbed by the cathode, the efficiency of the cathode cleaning treatment by the electron beam is substantially improved.

According to a second aspect of the invention, the excitation voltage applied to the already cleaned cathode is reduced below the excitation voltage applied to the uncleaned cathode. In addition, unnecessary consumption of the cathode can be avoided. As a result, the life of the device can be extended.

According to the third feature of the present invention, the anode electrode is formed by dividing the anode electrode into a plurality of anode electrode elements, and the magnitude of the negative voltage applied to the anode electrode element is asymmetrical along the anode electrode. By applying the voltage so that the potential distribution is formed, the irradiation efficiency of the electron beam and the efficiency of the cleaning treatment can be further improved.

[0018]

FIG. 1 shows a first embodiment of the present invention. FIG. 1 corresponds to FIG. 10 described above.
Are not shown. In the figure, parts corresponding to those in FIG. 10 are denoted by the same reference numerals, and description thereof will be omitted.

Referring to FIG. 1, in this embodiment, a substrate 10
The anode electrode 16 formed so as to face the insulating layer 11 thereon is used for the emitter tip cleaning process. At this time, a negative voltage is applied to the anode electrode 16 instead of a positive voltage. That is, when performing the cleaning process, the switch SW is closed and a negative voltage is applied to the first cathode electrode 12a. At the same time, the second cathode electrode 12b
Is applied with a positive voltage to emit electrons from the emitter tip 15a by the field emission effect.
Then, an electron beam reaching the emitter tip 15b is formed.
According to this embodiment, as a result of applying a negative voltage to the anode electrode during the cleaning process, the electrons emitted from the emitter tip 15a efficiently reach the emitter tip 15b, and the cleaning is efficiently performed. Is done. During normal operation, the switch SW is opened, and a positive voltage is applied to the anode.

FIG. 2 shows that the emitter tip 15a has -1V,
A potential distribution formed in the field emission cathode device when a voltage of +1 V is applied to the emitter tip 15b and at the same time, a voltage of -1 V is applied to the anode electrode 16 is shown. As in FIG. 10, the left and right in FIG. Also in the calculation example of FIG. 2, the gate electrodes 13a,
13b is assumed to be grounded.

As can be seen from FIG. 2, the electrons emitted from the emitter tip 15a are repelled by the electric field of the anode and return to the direction of the emitter tip 15b even if they are emitted at an acute angle with respect to the anode. . Some of them are captured by the gate electrodes 13a and 13b,
A part is trapped by a large electric field formed around the emitter tip 15b and guided to the tip 15b. FIG.
11 is compared with FIG. 11, the emitter tips 15a, 15
It can be seen that the potential distribution in the vicinity of the tip of b changes greatly. Clearly, in FIG.
The potential distribution formed in the vicinity of b is very convenient for focusing the electron beam on the tip of the emitter tip 15b. Although the magnitude of the negative voltage applied to the anode electrode varies depending on the configuration of the field emission cathode device, in the present embodiment, the magnitude of the negative voltage applied to the anode electrode is smaller than the voltage applied to the emitter tip 15a. It is generally effective to set it to be large.

Next, a second embodiment of the present invention will be described with reference to FIG. In the present embodiment, a pair of electron beam sources to which the excitation voltage is applied,
Electron beam arrays are sequentially selected from one end to the other end as shown in FIG. 8, and an excitation voltage is applied to the selected pair of electron beam sources to form electron beams.

Referring to FIGS. 3A to 3C, the field emission cathode device 30 includes an insulating layer 32 formed on an insulating substrate 31, and a boundary between the insulating substrate 31 and the insulating layer 32. , And the cathode electrodes 33a, 33b,... Formed in the insulator layer 32.
33b, and an emitter tip 34 formed in the through hole.
, a gate electrode 35 formed on the main surface of the insulator layer 32, and the emitter tip 34
, 34b,... and an anode electrode 36 formed to face the
are grouped into a plurality of groups to form electron beam sources A, B, C, D,. However, in the illustrated example, the electron beam source A is formed at one end of the electron beam source array.

In the state of FIG. 3A, the electron beam source A and the electron beam source B adjacent thereto are selected, and the electron beam is irradiated from the beam source A to the electron beam B, so that the emitter tip 34b in the beam source B is removed. Receives electron beam cleaning. After the electron beam source B is cleaned in the state shown in FIG. 3A, the state shifts to the state shown in FIG. 3B, and the electron beam source B and the electron beam source C adjacent thereto are selected. An electron beam is irradiated from the source B to the source C, and as a result, the emitter tip 34c in the source C is cleaned. Further, in the state of FIG. 3C, the electron beam source C and the electron beam source D
Is selected, and the emitter tip 34d in the source D is cleaned by the electron beam emitted from the electron beam source C to the electron beam source D.

It should be noted that in such a cleaning process, it is necessary to apply a particularly large negative voltage to the electron beam source A selected first in order to emit electrons by the field emission effect. This is because, in the step of FIG. 3A, the electron beam source A has not been subjected to any cleaning treatment, so that a large applied voltage is generally required to obtain the electron field emission effect. The electron beam source B that emits electrons in the step of FIG. 3B or the electron beam source C that emits electrons in the step of FIG. 3C has already been cleaned in the previous step. The voltage required for this becomes lower.

FIGS. 4A to 4E are time charts showing the progress of the above cleaning process. FIG. 4A shows the voltage applied to the electron beam source A and its timing. FIG. 4B shows the voltage applied to the electron beam source B and its timing, and FIG.
And the timing applied thereto.
Similarly, FIG. 4D shows the voltage applied to the (n-1) th electron beam source and its timing, and FIG. 4E shows the voltage applied to the nth electron beam source and its timing. Is shown.

As shown in FIGS. 4A and 4B, the electron beam source A first receives the negative voltage V _e1 in the interval t ₁ , and the electron beam source B receives the positive voltage V _x1 at the same timing. Applied. After the electron beam irradiated from the electron beam source A to the electron beam source B in this state, FIG. 4 (C), the (D), the size in the interval t ₂ to the electron beam source B is below the voltage V _e1 Also apply a small negative voltage _Ve2 . At the same time, a positive voltage V _x2 whose magnitude is smaller than the voltage V _x1 is applied to the electron beam source C at the same timing. As a result, a path for the electron beam from the electron beam source B to the electron beam source C is formed, and the emitter tip in the electron beam source C is cleaned. Further, by sequentially selecting the next pair of electron beam sources and applying the voltages V _e2 and V _x2 between the selected electron beam sources, the electron beam sources are sequentially cleaned. Finally, as shown in FIGS. 4D and _4E , a positive voltage _Vx2 is applied to the (n-1) th electron beam source located at the other end of the electron beam source array.
And a negative voltage V _e2 is applied to the n-th electron beam source.

The above process corresponds to the first cy in FIG.
, 2nd cycle, the electron beam sources A, B,
Considering that C,... Have already been subjected to the cleaning process at least once, the applied negative voltage is set to a voltage V _e3 having a magnitude smaller than Ve ₂ and the applied positive voltage is set to V The voltage V _x3 is set to be smaller than _x2 . In this way, by gradually reducing the magnitude of the excitation voltage applied as the cleaning proceeds, it becomes possible to minimize the consumption of the emitter tip. In this embodiment, it is particularly advantageous to form a special cleaning electron beam source around the electron beam source array as the electron power source A selected first. Further, in order to simplify the control, the voltage applied to the electron beam source to perform the cleaning process, may be fixed to V _x.

Next, a third embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIG. FIG. 5 (A), (B)
The same reference numerals are given to the parts described above, and the description thereof will be omitted. 5A and 5B, the electron beam source is distinguished by the cathode electrode.

Referring to FIG. 5A, a plurality of electron beam sources that are driven independently of each other during a normal operation, and two sets of electron beam sources 33a and 33 adjacent to each other during a cleaning operation.
The positive voltage is applied to the electron beam source group 33a and the negative voltage is applied to the electron beam source group 33b in the state of FIG. At the same time, a switch S is connected to the anode electrode 36.
By closing W, a negative voltage is applied. In this state, the electron beam source groups 33b to 33a are irradiated with an electron beam,
The emitter tip in the electron beam source group 33a is cleaned. For example, the electron beam source group 33a represents an electron beam group corresponding to odd-numbered drive lines, and the electron beam group 33b represents an electron beam group corresponding to even-numbered drive lines.

After the process of FIG. 5A, the voltage applied to the electron beam source group is inverted while the positive voltage applied to the anode electrode 36 in the process of FIG. A negative voltage is applied to the source group 33a, and a positive voltage is applied to the electron beam source group 33b. In this state, an electron beam emitted from the electron beam source group 33a is used by the electron beam source group 33b.
The emitter tip inside is cleaned. Further, FIG.
By alternately repeating the processes (A) and (B), the cleanliness of the emitter tip in each electron beam group is gradually improved.

FIGS. 6A and 6B show FIGS. 5A and 5B, respectively.
Electron beams 33a, 3
3b shows a voltage applied to the device. 8A shows the voltage applied to the electron beam source group 33a, and FIG. 8B shows the voltage applied to the electron beam source group 33b.

[0033] FIG. 6 (A), the As can be seen from (B), the negative voltage V _e1 in the section t ₁ is the electron beam group 33a, also positive voltage V _x is applied to the electron beam source group 33b, the time t ₂ positive voltage V _x is the electron beam group 33a in the next section t ₃ when separated by
And a negative voltage V smaller than the previous negative voltage V _e1.
e2 is applied to the electron beam group 33b. By repeating the above process, the magnitude of the negative voltage changes with time with respect to V _e3 , V
_e4 , _Ve5,. . . And it is kept constant when it reaches V _e5 . By setting the excitation voltage in this way, the maximum cleaning effect can be obtained while minimizing the consumption of the emitter tip. Also, the electron beam groups 33a, 33b
The number of electron beam sources included in is set as appropriate according to the capability of a getter (not shown).

Next, a fourth embodiment of the present invention will be described with reference to FIG. FIG. 7 shows a field emission cathode device 40 according to the fourth embodiment.

Referring to FIG. 7, the field emission cathode device 40
Are formed on an insulating substrate 41 on which an insulating film 42 is formed, and cathode electrodes 43a and 43b are formed on the boundary between the insulating film 42 and the substrate 41 in correspondence with each electron beam source. A plurality of through holes are formed in the insulating film 42 corresponding to the cathode electrodes 43a and 43b, and one or more conical emitter tips 44 are formed on the surfaces of the cathode electrodes 43a and 43b exposed by the through holes. It is formed. Further, the gate electrode 45 is formed on the upper main surface of the insulating film 42.
Is formed. Further, an insulating substrate 47 carrying an anode electrode is formed above the substrate 41 in the drawing, and a plurality of electrically insulating substrates 47 are formed on the side facing the electron beam source. Anode electrode element 48
a, 48b,... are carried, and the electrode elements 48a, 48
,... and the insulating substrate 47
To form

FIG. 7 shows a structure in which the emitter tip 44 is further cleaned in the field emission cathode device having such a structure. In the illustrated example, a negative voltage _Ve1 is applied to the emitter tip 44 formed on the cathode electrode 43b,
On the other hand the emitter tip 44 which is formed on the cathode electrode 43a by applying a positive voltage V _x, the electron beam source with an electron beam 43
The step of irradiating the plurality of emitter tips of the electron beam source 43a from the plurality of emitter tips b to clean the emitter tip 44 in the electron beam source 43a is shown.

In this embodiment, as in the previous embodiment, a negative voltage is applied to the anode electrode elements 48a, 48b,..., But negative voltages V _H1 , V _H2 ,
V _H3 and generates three kinds of power supply _{(V H1 <V H2 <V} H3) are provided, the anode electrode elements 48f, 48 for three consecutive
e, 48d and similarly continuous anode electrode elements 48
The negative voltages _VH1 , _VH2 , and _VH3 are sequentially applied to c, 48b, and 48a, respectively. As a result, the anode electrode element 48
An asymmetric potential distribution is formed which increases from f to 48d and from the anode electrode elements 48c to 48a, and as a result, the maximum trajectory of the electron beam density emitted from the emitter tip 44 of the electron beam source 43b is Source 4
The electron is bent toward 3a, and the electrons are efficiently captured by the emitter tip 44 to which the positive voltage is applied. The values of the voltages V _H1 , V _H2 , and V _H3 are set so as to increase substantially linearly with the position of the electrode element.
_H1 and _VH3 are set so that the sizes differ by about 20%.

As a timing for performing the above-mentioned cleaning treatment, a manufacturing process of the field emission cathode device, specifically, a vacuum sealing process of the field emission cathode device can be considered. Volatile substances are adsorbed on the surface of the emitter tip immediately after the sealing, so that it is necessary to perform a cleaning treatment before shipping the product. In the pre-shipment processing, it is effective to apply a large negative voltage V _e1 to the electron beam source A provided for the purpose of the cleaning processing as described with reference to FIG. Further, after the field emission cathode device is assembled in the electronic device and shipped, it is convenient to execute the cleaning process immediately after turning on the power of the electronic device. Generally, various inspection and diagnosis programs are executed immediately after the power of the electronic device is turned on. By performing the cleaning process during that time, extra time required for cleaning can be saved. Further, since such a cleaning process does not require a high temperature, other portions in the electronic device are not adversely affected. Further, in order to cope with the gas adsorption of the emitter tip over time, it is possible to configure so that the usage time of the field emission cathode device is monitored by a timer, and the cleaning process is started when a predetermined time elapses. Further, a configuration may be adopted in which a decrease in the anode current is monitored, and when the anode current falls below a predetermined value, a warning lamp or the like indicating the necessity of the cleaning process is turned on.

Although the present invention has been described with reference to the embodiment, the present invention is not limited to the above embodiment.
Various modifications within the scope of the claims,
Changes are possible.

[0040]

According to the present invention, since a negative voltage is applied to the anode electrode when the emitter tip is cleaned by the electron beam, the electron beam can efficiently reach the target emitter tip. It is possible to efficiently clean the emitter tip. In particular, in an apparatus having several hundred to about 1,000 cathode lines, the time required for the cleaning process can be reduced by appropriately grouping the cathode lines, that is, the electron beam sources. Further, when the anode electrode is divided into a plurality of electrode elements, and a voltage having a sequentially changing magnitude is applied thereto to form an asymmetric electric field distribution, the arrival rate of the electron beam to the target emitter tip is further improved. . In addition, by reducing the excitation voltage applied between a pair of electron beam sources when forming an electron beam as the cleaning process proceeds, unnecessary consumption of the emitter tip in the electron beam source can be avoided. become.

[Brief description of the drawings]

FIG. 1 is a view showing a cleaning process in a field emission cathode device according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating an operation principle of the first embodiment of the present invention.

FIG. 3 is a view showing a cleaning process in a field emission cathode device according to a second embodiment of the present invention.

FIG. 4 is a timing chart showing the operation of the second embodiment of the present invention.

FIG. 5 is a view showing a cleaning process in a field emission cathode device according to a third embodiment of the present invention.

FIG. 6 is a timing chart showing the operation of the third embodiment of the present invention.

FIG. 7 is a view showing a cleaning process in a field emission cathode device according to a fourth embodiment of the present invention.

FIG. 8 is a perspective view showing a conventional field emission cathode device.

FIG. 9 is an enlarged view showing a part of the field emission cathode device of FIG.

FIG. 10 is a diagram showing a cleaning process in a conventional field emission cathode device.

11 is a diagram showing a calculation result of a potential distribution when a voltage of +1 V is applied to the anode in FIG.

[Explanation of symbols]

10, 31, 41 Insulating substrate 11, 32, 42 Insulator layer 12a, 12b, 33a, 33b, 43a, 43b Cathode electrode (electron beam source) 13a, 13b, 35, 45 Gate electrode 14a, 14b Electron beam source 15a , 15b, 34a to 34d, 44 Emitter tip 16, 36 Anode electrode 46 Anode 47 Anode substrate 48a to 48f Anode electrode element SW switch

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01J 1/304 H01J 9/38

Claims (10)

(57) [Claims] 1. A cathode that is applied with a cathode voltage and emits electrons by a field emission effect, and is formed in close proximity to the cathode and is applied with a predetermined gate voltage to emit electrons from the cathode by the field emission effect. An electron beam source array formed by arranging a plurality of electron beam sources formed by arranging a plurality of electron beam generating elements constituted by gates; and an electron beam source array formed by arranging a plurality of anode electrode elements. An anode arranged to face the plurality of electron beam source groups therein, and applied with a predetermined anode voltage to accelerate and capture electrons emitted from the electron beam sources in the electron beam source array; Electron repulsion means for energizing electrons emitted from an electron beam source in the electron beam source array in the direction of another electron beam source , wherein the electron repulsion means comprises a predetermined negative voltage applied to the anode. And a voltage source for applying a voltage. 2. The method according to claim 1, wherein the electron repulsion unit further includes a switching unit that is operated when cleaning the electron beam source and applies the predetermined negative voltage generated by the voltage source to the anode. The device of claim 1, wherein 3. A cathode which is applied with a cathode voltage and emits electrons by a field emission effect, and which is formed close to the cathode and is applied with a predetermined gate voltage to emit electrons from the cathode by the field emission effect. An electron beam source array formed by arranging a plurality of electron beam generating elements each constituted by a gate; and an electron beam source array formed opposite to the electron beam source array and receiving a predetermined positive anode voltage to apply the electron beam. A field emission cathode device comprising: an anode electrode for accelerating and capturing electrons emitted from the cathode in a source array; an electric field for cleaning the cathode by irradiating an electron beam from one cathode to another cathode; In the method for cleaning an emission cathode device, a predetermined excitation voltage is applied between a pair of cathodes in the electron beam source array to form the pair of cathodes. Wherein the step of forming an electron beam, to become more and said step substantially applying a negative voltage to the anode electrode at the same time dance. 4. The plurality of electron beam generating elements are divided into a plurality of groups each including a plurality of electron beam generating elements, and the excitation voltage is a first electron beam generating element group included in the plurality of groups. 4. The method of claim 3, wherein the voltage is applied between a cathode in the plurality and a cathode in a second group of electron beam generating elements included in the plurality of groups. 5. The step of forming an electron beam between the pair of cathodes includes sequentially selecting a pair of adjacent electron beam generating elements from one end to the other end of the electron beam source array. 4. The method according to claim 3, further comprising applying the excitation voltage between cathodes in the pair of electron beam generating elements. 6. The step of applying the excitation voltage includes selecting a first electron beam generating element pair including first and second electron beam generating elements, and then selecting the second electron beam generating element and a third electron beam generating element.
6. The method according to claim 5, further comprising the step of selecting a second electron beam generating element pair consisting of the electron beam generating elements. 7. The step of applying an excitation voltage includes the step of: applying a predetermined excitation voltage applied to a pair of electron beam generating elements selected first to a predetermined pair of electrons applied to a pair of electron beam generating elements selected next. 7. The method according to claim 6, further comprising the step of setting the excitation voltage higher than the excitation voltage. 8. The step of forming an electron beam between the pair of cathodes includes applying the predetermined excitation voltage repeatedly between a pair of adjacent electron beam generating elements, and in this case, sequentially changing the value of the predetermined excitation voltage. 4. The method of claim 3, comprising the step of reducing. 9. A cathode that is applied with a cathode voltage and emits electrons by a field emission effect, and is formed adjacent to the cathode, and is applied with a predetermined gate voltage to emit electrons from the cathode by the field emission effect. An electron beam source array formed by arranging a plurality of electron beam generating elements each constituted by a gate; and a plurality of anodes arranged to face the electron beam generating elements in the electron beam source array. A field emission cathode device comprising: an electrode formed by arranging electrode elements, and an anode to which a predetermined positive anode voltage is applied to accelerate and capture electrons emitted from the cathode in the electron beam source array. A method for cleaning a field emission cathode device, wherein the cathode is cleaned by irradiating an electron beam from one cathode to another cathode; First electron beam generating element from being Ray and second
And a predetermined excitation voltage is applied between the cathode in the first electron beam generating element and the cathode in the second electron beam generating element. Applying a different negative voltage to the plurality of anode electrode elements substantially simultaneously with the step of applying an electron beam to connect the pair of cathodes. . 10. The step of forming an electron beam includes selecting a first electron beam generating element group including a plurality of electron beam generating elements including the first electron beam generating element, and selecting the second electron beam generating element. A second electron beam generating element including a plurality of electron beam generating elements;
And forming an electron beam so as to connect a plurality of cathode groups in the first electron beam generating element group and a plurality of cathode groups in the second electron beam generating element group. The method of claim 9 comprising the step of: