JP3237398B2 - Microwave semiconductor integrated circuit module - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave semiconductor integrated circuit module and, more particularly, to a microwave semiconductor integrated circuit module capable of preventing a microwave signal from sneaking through a power supply system to the microwave semiconductor integrated circuit. The present invention relates to a semiconductor integrated circuit module.

[0002]

2. Description of the Related Art FIG. 7 is a perspective view showing an example of a conventional microwave semiconductor integrated circuit module. In the microwave semiconductor integrated circuit module 500, the microwave semiconductor integrated circuit (for example, Monolithic Microwave I
The integrated circuit 1 is mounted on a mounting surface 1G formed on the surface of the multilayer substrate 52. Its mounting surface 1G
Is grounded. The conductor line 56 formed on the surface of the multilayer substrate 52 has a connection portion 55 to which the power lead-out terminal 1a of the microwave semiconductor integrated circuit 1 is connected relatively near the microwave semiconductor integrated circuit 1, and ,
A power supply unit 58 to which power is applied to the microwave semiconductor integrated circuit 1 is provided at a position away from the connection unit 55. The power supply unit 58 is grounded by the chip capacitor 7. The microwave semiconductor integrated circuit 1
Receives a microwave signal from the RF input unit 3.
The microwave signal processed by the microwave semiconductor integrated circuit 1 is output from the microwave semiconductor integrated circuit 1 to the RF output unit 4.

[0003]

In the conventional microwave semiconductor integrated circuit module 500, the connection portion 55 to which the power lead-out terminal 1a is connected by using the conductor line 56 and the chip capacitor are used for convenience of the bonding step. 7 is spatially separated from the power supply application unit 58 to which it is connected. However, since the conductor line 56 has an impedance that cannot be ignored with respect to the microwave signal, the microwave signal wraps around, and the microwave semiconductor integrated circuit 1 oscillates or the operation becomes unstable. There is. SUMMARY OF THE INVENTION It is an object of the present invention to provide a microwave semiconductor integrated circuit module improved so as to prevent a microwave signal from sneaking through a power supply system to the microwave semiconductor integrated circuit.

[0004]

According to a microwave semiconductor integrated circuit module of the present invention, a microwave semiconductor integrated circuit is mounted on a surface of a substrate, and a connection portion to which a power lead-out terminal of the microwave semiconductor integrated circuit is connected. A conductor surface having a power supply unit relatively close to the microwave semiconductor integrated circuit and having a power application unit for applying power to the microwave semiconductor integrated circuit at a position away from the connection unit, on the surface or inside the substrate; Forming, forming a ground plane close to or opposite to the conductor surface on the surface or inside of the substrate, forming a microwave signal grounding capacitor by the capacitance between the conductor surface and the ground plane , Facing the ground plane
The area of the conductor surface is determined by the surface of the microwave semiconductor integrated circuit.
Product and the impedance of the conductor surface is
It is characterized in that it is configured to have a sufficiently small value with respect to the wave signal . In addition, the impedance of the conductor surface
Is less than 50Ω for microwave signals.
It is characterized by that.

[0005]

In the microwave semiconductor integrated circuit module according to the present invention, the conductor surface is spatially separated to spatially separate the connection portion to which the power supply lead terminal of the microwave semiconductor integrated circuit is connected and the power supply application portion to which the chip capacitor is connected. Along with
A ground plane is provided close to or opposite to the conductor plane, and a capacitor between the conductor plane and the ground plane constitutes a microwave signal grounding capacitor. In addition, it faces the ground surface.
The area of the conductor surface of the microwave semiconductor integrated circuit.
Area and the impedance of the conductor surface
Sufficiently small value for black wave signal (for example, 50Ω or less)
It was configured to be. Therefore, the impedance of the conductor surface becomes negligible with respect to the microwave signal, and the microwave signal does not wrap around. Therefore, oscillation of the microwave semiconductor integrated circuit and unstable operation are prevented.

In the microwave semiconductor integrated circuit module having the above structure, when the conductor surface is formed on a surface of the substrate and the ground plane is formed inside the substrate so as to face the conductor surface, the ground plane may be used as the ground plane. An internal ground layer is available. In the microwave semiconductor integrated circuit module having the above configuration, the conductive surface is formed inside the substrate, and when the ground surface is formed on the surface of the substrate so as to face the conductive surface, The mounting surface of the microwave semiconductor integrated circuit can be used. Therefore, space can be saved. In the microwave semiconductor integrated circuit module having the above configuration, the conductive surface is formed inside the substrate, and the ground plane is formed on both the surface and the inside of the substrate so as to sandwich the conductive surface.
A large capacitance can be obtained even with a small area.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in more detail with reference to the embodiments shown in the drawings. Note that the present invention is not limited by this.

FIG. 1 is a perspective view of a microwave semiconductor integrated circuit module according to a first embodiment of the present invention. In the microwave semiconductor integrated circuit module 100, the microwave semiconductor integrated circuit 1 includes a mounting surface 1 formed on a surface of a multilayer substrate 2a.
It is implemented on G. The conductor surface 6a formed on the surface of the multilayer substrate 2a has a connection portion 5a to which the power lead-out terminal 1a of the microwave semiconductor integrated circuit 1 is connected relatively near the microwave semiconductor integrated circuit 1, and A power supply unit 8a to which power is applied to the microwave semiconductor integrated circuit 1 is provided at a position distant from the connection unit 5a. The vicinity of the power supply section 8a is grounded by the chip capacitor 7. A microwave signal is input from the RF input unit 3 to the microwave semiconductor integrated circuit 1. Further, the microwave signal processed by the microwave semiconductor integrated circuit 1 is
To the RF output unit 4.

FIG. 2 is a sectional view taken along line AA of FIG. An internal ground layer 9 is provided inside the multilayer substrate 2a.
The mounting surface 1 </ b> G and the ground-side lands of the chip capacitor 7 are connected to the internal ground layer 9 via holes 11. The conductor surface 6a is opposed to the internal grounding layer 9, and a capacitance between the two forms a microwave signal grounding capacitor. In addition,
The area of the conductor surface 6a is the same as that of the microwave semiconductor integrated circuit 1.
Area. Thereby , the impedance of the conductor surface 6a is sufficiently small for a microwave signal. For example, it is 50Ω or less.
Therefore, the microwave signal does not wrap around, and the microwave semiconductor integrated circuit 1 does not oscillate and operates stably.

Second Embodiment FIG. 3 is a perspective view of a microwave semiconductor integrated circuit module according to a second embodiment of the present invention. In the microwave semiconductor integrated circuit module 200, the microwave semiconductor integrated circuit 1 has a mounting surface 1 formed on the surface of the multilayer substrate 2b.
It is implemented on G '. Further, the mounting surface 1G '
The microwave semiconductor integrated circuit 1 has an area at least twice as large as that of the microwave semiconductor integrated circuit 1, and has a window g near the microwave semiconductor integrated circuit 1, and has a connection land 5b 'in the window g.

Conductive surface 6 formed inside multilayer substrate 2b
b denotes an area equal to or larger than that of the microwave semiconductor integrated circuit 1, and a connection portion to which the power lead-out terminal 1a of the microwave semiconductor integrated circuit 1 is connected via the connection land 5b 'and the via hole 11. 5b is provided relatively close to the microwave semiconductor integrated circuit 1, and a power supply unit 8b to which power to the microwave semiconductor integrated circuit 1 is applied via a power supply land 8b 'and a via hole 11. It is provided at a position distant from the connection portion 5b. The power application land 8b 'is grounded by the chip capacitor 7. A microwave signal is input from the RF input unit 3 to the microwave semiconductor integrated circuit 1. Further, the microwave signal processed by the microwave semiconductor integrated circuit 1 is
To the RF output unit 4.

FIG. 4 is a sectional view taken along line AA of FIG. An internal ground layer 9 is provided inside the multilayer substrate 2b.
The mounting surface 1 </ b> G ′ is connected to the internal ground layer 9 via a via hole 11. Further, the mounting surface 1G ′
The conductor surface 6b is provided between the internal ground layer 9 and the internal ground layer 9. The conductor surface 6b faces the mounting surface 1G 'and the internal ground layer 9, and a capacitance between them forms a microwave signal ground capacitor. The area of the conductor surface 6b is equal to the microwave half.
It is larger than the area of the conductor integrated circuit 1. This
Therefore , the impedance of the conductor surface 6b is sufficiently small for a microwave signal. For example, it is 50Ω or less. Therefore, the microwave signal does not wrap around, and the microwave semiconductor integrated circuit 1 does not oscillate and operates stably.

Third Embodiment FIG. 5 is a perspective view of a microwave semiconductor integrated circuit module according to a third embodiment of the present invention. In the microwave semiconductor integrated circuit module 300, the microwave semiconductor integrated circuit 1 has a mounting surface 1 formed on the surface of the multilayer substrate 2c.
It is implemented on G. A conductor surface 6c formed inside the multilayer substrate 2c faces the mounting surface 1G, and is connected to a power lead-out terminal 1a of the microwave semiconductor integrated circuit 1 via a connection land 5c 'and a via hole 11. Power supply to the microwave semiconductor integrated circuit 1 via the power supply land 8 c ′ and the via hole 11. A portion 8c is provided at a position away from the connection portion 5c. The power application land 8c 'is grounded by the chip capacitor 7.
A microwave signal is input from the RF input unit 3 to the microwave semiconductor integrated circuit 1. The microwave signal processed by the microwave semiconductor integrated circuit 1 is output from the microwave semiconductor integrated circuit 1 to the RF output unit 4.

FIG. 6 is a sectional view taken along line AA of FIG. An internal ground layer 9 is provided inside the multilayer substrate 2c.
The mounting surface 1 </ b> G and the ground-side lands of the chip capacitor 7 are connected to the internal ground layer 9 via holes 11. The conductor surface 6c is provided between the mounting surface 1G and the internal ground layer 9. The conductor surface 6c faces the mounting surface 1G and the internal ground layer 9, and a capacitance between them forms a microwave signal ground capacitor. In addition,
The area of the body surface 6c is equal to that of the microwave semiconductor integrated circuit 1.
It is larger than the area. Thereby , the conductor surface 6
The impedance of c is sufficiently small for microwave signals. For example, it is 50Ω or less. Therefore, the microwave signal does not wrap around, and the microwave semiconductor integrated circuit 1 does not oscillate and operates stably.

[0015]

According to the microwave semiconductor integrated circuit module of the present invention, it is possible to prevent a microwave signal from sneaking through a power supply system to the microwave semiconductor integrated circuit. As a result, the microwave semiconductor integrated circuit operates stably.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a microwave semiconductor integrated circuit module according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a perspective view showing a microwave semiconductor integrated circuit module according to a second embodiment of the present invention.

FIG. 4 is a sectional view taken along line AA of FIG. 3;

FIG. 5 is a perspective view showing a microwave semiconductor integrated circuit module according to a third embodiment of the present invention.

6 is a sectional view taken along line AA of FIG.

FIG. 7 is a perspective view showing an example of a conventional microwave semiconductor integrated circuit module.

[Description of Signs] 100, 200, 300, 500 Microwave semiconductor integrated circuit module 1 Microwave semiconductor integrated circuit 1G, 1G 'Mounting surface 1a Power lead-out terminal 2a, 2b, 2c, 52 Multilayer substrate 3 RF input unit 4 RF output Part 5a, 5b, 5c, 55 Connection part 6a, 6b, 6c Conductor surface 7 Chip capacitor 8a, 8b, 8c Power supply part 9 Internal ground layer 11 Via hole 56 Conductor line

──────────────────────────────────────────────────続 き Continued on the front page (56) References Japanese Utility Model Hei 1-165568 (JP, U) Japanese Utility Model Hei 1-165569 (JP, U) Japanese Utility Model Hei 3-115407 (JP, U) (58) Survey Field (Int.Cl. ⁷ , DB name) H05K 1/18 H05K 1/16 H05K 3/46 H01R 4/64 H01P 3/08

Claims (4)

(57) [Claims] 1. A microwave semiconductor integrated circuit is mounted on a surface of a substrate, and a connection portion to which a power lead-out terminal of the microwave semiconductor integrated circuit is connected is provided relatively close to the microwave semiconductor integrated circuit. A conductor surface having a power application unit for applying power to the microwave semiconductor integrated circuit at a position distant from the connection unit is formed on or in the substrate, and the conductor surface is in contact with or near the conductor surface. A ground is formed on the surface or inside of the substrate, and a capacitance between the conductor surface and the ground surface constitutes a microwave signal grounding capacitor, and the conductor surface facing the ground surface
Is larger than the area of the microwave semiconductor integrated circuit.
Comb, the impedance of the conductor surface
A microwave semiconductor integrated circuit module having a sufficiently small value . 2. The microwave semiconductor integrated circuit module according to claim 1, wherein the impedance of said conductor surface is
A microwave semiconductor integrated circuit module having a resistance of 50Ω or less with respect to a microwave signal . 3. The microwave semiconductor integrated circuit module according to claim 1, wherein the conductor surface is formed inside the substrate, and the ground plane is formed on the surface of the substrate so as to face the conductor surface. A microwave semiconductor integrated circuit module, comprising: 4. The microwave semiconductor integrated circuit module according to claim 1, wherein said conductor surface is formed inside said substrate, and said ground plane is sandwiched between said conductor surface and both the surface and inside of said substrate. A microwave semiconductor integrated circuit module, characterized in that the module is formed as follows.