JP3237399B2 - Vacuum deposition equipment - Google Patents
Vacuum deposition equipmentInfo
- Publication number
- JP3237399B2 JP3237399B2 JP12231794A JP12231794A JP3237399B2 JP 3237399 B2 JP3237399 B2 JP 3237399B2 JP 12231794 A JP12231794 A JP 12231794A JP 12231794 A JP12231794 A JP 12231794A JP 3237399 B2 JP3237399 B2 JP 3237399B2
- Authority
- JP
- Japan
- Prior art keywords
- evaporation source
- evaporation
- heat
- shielding structure
- heat shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【0001】[0001]
【産業上の利用分野】本発明は、食品包装、医薬品包
装、電子機器部品包装、たばこ包装、写真製版、感光性
写真材料などの分野に利用可能な各種機能を有したフレ
キシブルプラスチックフィルムの真空蒸着加工に好適に
用いられる真空蒸着装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to vacuum deposition of a flexible plastic film having various functions usable in fields such as food packaging, pharmaceutical packaging, electronic equipment parts packaging, tobacco packaging, photoengraving, and photosensitive photographic materials. The present invention relates to a vacuum deposition apparatus suitably used for processing.
【0002】[0002]
【従来の技術】近年、真空蒸着法によりフレキシブルプ
ラスチックフィルムの表面に金属または金属酸化物をコ
ーティングし、装飾性、ガスバリヤ性、耐薬品性、濡れ
特性、磁気特性、電導性、寸法安定性などの機能性を付
与し、食品包装,医薬品包装,電子機器部品包装,たば
こ包装,写真製版及び感光性写真材料などの分野に利用
されるようになった。特にアルミニウム蒸着フィルム
は、装飾、包装用途に広く利用されるようになってい
る。また、最近では環境汚染の少ない透明ハイバリヤー
素材として珪素酸化物蒸着フィルムの研究開発も盛んに
行われ、広く普及することも期待されるなど金属酸化物
の蒸着技術の開発に対する要求も日増しに強くなってい
る。2. Description of the Related Art In recent years, a metal or metal oxide is coated on the surface of a flexible plastic film by a vacuum vapor deposition method to provide decorativeness, gas barrier properties, chemical resistance, wetting properties, magnetic properties, electrical conductivity, dimensional stability, etc. It has added functionality and has been used in fields such as food packaging, pharmaceutical packaging, electronic device parts packaging, tobacco packaging, photoengraving and photosensitive photographic materials. In particular, aluminum vapor-deposited films have been widely used for decoration and packaging applications. In recent years, research and development of silicon oxide vapor deposition film has been actively conducted as a transparent high barrier material with low environmental pollution, and the demand for the development of metal oxide vapor deposition technology is expected to be widespread. It is getting stronger.
【0003】これらの用途の広がりに対応し、大量生産
および加工コストの低減が必要となった。そのため、蒸
発温度を高温にして加工速度を高速化することによる加
工時間の短縮、装着するフィルム幅を広くすることによ
る1回の加工工程で生産可能な面積の拡大、加工長の延
長などが実用化され、蒸着装置が大型化してきた。その
中でも、加工速度の高速化をはかるため、蒸発源を大型
化すると共に蒸着温度を高温化することにより蒸発量と
蒸発速度を増加させた真空蒸着装置が増えつつある。し
かしながら、蒸発源の大型化と蒸着温度の高温化は、何
れも蒸発源からの発熱量を増大させることになり、しか
も蒸発源を遮熱/保温する構造を有していないため、蒸
発源の熱効率が低い上、蒸発源周辺の部品の熱変形や熱
疲労による破損、基材フィルムの熱劣化による皺の発
生、蒸着フィルムのバリヤ性能の低下、引き裂き強度の
低下などの品質低下を招くという問題点があった。[0003] In response to the expansion of these uses, mass production and reduction of processing costs have become necessary. For this reason, it is practical to shorten the processing time by increasing the processing speed by raising the evaporation temperature, increase the area that can be produced in one processing step by extending the width of the film to be mounted, and extend the processing length. And the deposition apparatus has become larger. Above all, in order to increase the processing speed, vacuum evaporation apparatuses have been increasing in which the evaporation amount and the evaporation rate are increased by increasing the size of the evaporation source and increasing the evaporation temperature. However, the increase in the size of the evaporation source and the increase in the deposition temperature both increase the amount of heat generated from the evaporation source, and furthermore, since the evaporation source does not have a structure for shielding and keeping the temperature of the evaporation source, the evaporation source is not used. In addition to low thermal efficiency, there is a problem that quality deterioration such as damage due to thermal deformation or thermal fatigue of parts around the evaporation source, wrinkling due to thermal deterioration of the base film, reduction in barrier performance of the deposition film, reduction in tear strength, etc. There was a point.
【0004】さらに、アルミニウム、クロム、銅、銀な
どの金属蒸着では、蒸発源からの熱線を蒸着膜であるア
ルミニウムなどの金属が反射してしまうが、珪素酸化物
やアルミニウム酸化物などの透明蒸着フィルムを蒸着加
工する場合は、蒸着膜は蒸発源からの熱線を反射しない
で基材フィルムと共に吸収してしまうため、基材フィル
ムの熱劣化による蒸着フィルムの品質低下の問題は特に
大きい。Further, in the case of vapor deposition of a metal such as aluminum, chromium, copper, and silver, a heat ray from an evaporation source is reflected by a metal such as aluminum which is a vapor deposition film. When a film is subjected to vapor deposition, the vapor deposited film absorbs heat rays from the evaporation source together with the base film without reflecting it, and thus the problem of deterioration in the quality of the vapor deposited film due to thermal deterioration of the base film is particularly large.
【0005】[0005]
【発明が解決しようとする課題】本発明の目的は、高速
生産を目的し大型化およびまたは高温化した蒸発源の熱
効率を高めながら、周辺部品の破損と蒸着フィルムの品
質低下を招かない真空蒸着装置を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to improve the thermal efficiency of a large-sized and / or high-temperature evaporation source for high-speed production, while avoiding damage to peripheral parts and deterioration of the quality of a deposited film. It is to provide a device.
【0006】[0006]
【課題を解決するための手段】本発明の目的は、蒸発源
を、箱状の蒸発源遮熱構造体により囲んでなる真空蒸着
装置であって、前記蒸発源遮熱構造体は、外側から蒸発
源へ向って、水冷パイプで冷却された金属板、グラファ
イト繊維圧縮成形板、グラファイト板または窒化ホウ素
成形板の順序で構成されており、かつ垂直面に対して4
5度以上の角度で傾斜し蒸発原料が蒸発する開口部およ
び蒸発原料を供給する開口部を有し、かつ前記蒸発原料
が蒸発する開口部先端の温度が蒸発粒子の蒸発温度以上
であることを特徴とする真空蒸着装により達成すること
ができる。SUMMARY OF THE INVENTION An object of the present invention is to provide a vacuum evaporation apparatus in which an evaporation source is surrounded by a box-shaped evaporation source heat shielding structure, wherein the evaporation source heat shielding structure is provided from the outside. To the evaporation source, it consists of a metal plate cooled by a water-cooled pipe, a graphite fiber compression molded plate, a graphite plate or a boron nitride molded plate, and
It has an opening inclined at an angle of 5 degrees or more and an evaporation material is evaporated and an opening for supplying the evaporation material, and the temperature at the tip of the opening at which the evaporation material is evaporated is equal to or higher than the evaporation temperature of the evaporation particles. This can be achieved by a characteristic vacuum deposition apparatus.
【0007】蒸発源の加熱方式は、抵抗加熱方式、高周
波誘導加熱方式、電子線加熱方式など公知の方式の中か
ら特に限定なく選択することができる。蒸発原料が連続
供給式であるか否かについても特に限定するものではな
いが、特開平1−252768号公報及び特開平2−2
77774号公報に記載されるような、蒸発源を上方か
ら見た場合に蒸発原料が蒸発しない部分の面積が比較的
大きい抵抗加熱方式での蒸発原料連続供給機構を有する
蒸発源を本発明の蒸発源遮熱構造体により囲んでなる真
空蒸着装置を用いて、透明蒸着フィルムを形成する場合
に、特に優れた効果を発揮する。図1にその概略図を示
す。蒸発源を囲む蒸発源遮熱構造体は、外側から蒸発源
へ向って、金属板/中間断熱層/内側断熱層で構成さ
れ、それぞれ具体的には水冷パイプで冷却された金属板
/グラファイト繊維圧縮成形版/グラファイト板または
窒化ホウ素成形板の順序で構成されている。The method of heating the evaporation source can be selected without particular limitation from known methods such as a resistance heating method, a high-frequency induction heating method, and an electron beam heating method. Although there is no particular limitation on whether or not the evaporation raw material is of a continuous supply type, JP-A-1-252768 and JP-A-2-2-268.
JP-A-77774 discloses an evaporation source having an evaporation material continuous supply mechanism using a resistance heating method in which the area of a portion where evaporation material does not evaporate is relatively large when the evaporation source is viewed from above. Particularly excellent effects are exhibited when a transparent vapor-deposited film is formed using a vacuum vapor-deposition device surrounded by a source heat-shielding structure. FIG. 1 shows a schematic diagram thereof. The evaporation source heat shielding structure surrounding the evaporation source is composed of a metal plate / intermediate heat insulation layer / inside heat insulation layer from the outside to the evaporation source, and specifically, a metal plate / graphite fiber cooled by a water cooling pipe, respectively. It consists of a compression plate / graphite plate or boron nitride plate.
【0008】蒸発源遮熱構造体の外側表面は、できるだ
け低温にし遮熱効果を高くする必要があるため、冷却の
ための水冷パイプを付加した金属板であることが好まし
い。金属材料としては、耐熱性、加工性、重量だけを考
慮するならばほとんどの金属を使用することができる
が、水冷パイプで効率よく冷却するためには、熱伝導の
良い状態で接続できるハンダ、銀ロウなどの溶接手段が
容易な銅、鉄、ステンレスなどが適当である。中間断熱
層の材料は、保温効果を高くする必要があるため、高温
となる蒸発源の温度に耐えられる材料の中から、断熱効
果が高くかつ高温真空下での放出ガスが少ないものを選
択しなければならない。断熱性、耐熱性、放出ガス等の
点から、断熱層にはグラファイト繊維が適しており、そ
の中でも特に、グラファイト繊維を板状に圧縮成形した
ものが最適である。Since the outer surface of the evaporation source heat shielding structure needs to be as low as possible in temperature to enhance the heat shielding effect, it is preferable to use a metal plate to which a water cooling pipe for cooling is added. As the metal material, most metals can be used if only heat resistance, workability, and weight are considered, but in order to efficiently cool with a water-cooled pipe, solder that can be connected with good heat conduction, Copper, iron, stainless steel, etc., which can be easily welded by silver brazing or the like, are suitable. As the material of the intermediate heat insulating layer needs to have a high heat retaining effect, a material that has a high heat insulating effect and emits a small amount of gas under high-temperature vacuum should be selected from materials that can withstand the high temperature of the evaporation source. There must be. Graphite fibers are suitable for the heat insulating layer from the viewpoints of heat insulation, heat resistance, released gas, and the like, and among them, the one in which graphite fibers are compression-molded into a plate shape is most suitable.
【0009】蒸発源遮熱構造体の内側断熱層は、高温
(蒸発原料や蒸着条件などによって異なるが通常130
0℃以上)となる蒸発源からの放射熱に曝されるため、
中間断熱層以上に耐熱性が必要であり、特に昇温降温時
の急加熱急冷却による破損が発生しない材料で構成され
るなければならない。また、蒸発原料ガスに直接曝され
るため、蒸発原料によってはそのガスに対する耐腐食性
(例えば、珪素酸化物などの酸化物を蒸着する場合には
酸化消耗が少ないこと)が必要となる。蒸発源遮熱構造
体の内側断熱層の材料は、これらの条件を満たすものの
中から、高温真空下での放出ガスが少ないものを選択し
なければならない。耐熱性、耐腐食性及び放出ガス特性
に加え、材料の価格、加工性、強度なども考慮に入れる
と、等方性黒鉛板(グラファイト等方圧縮成形板)が最
適である。但し、電気的に絶縁しなければならない場所
に用いる場合は、窒化ホウ素成形体が最適である。この
場合、酸化アルミニウム、酸化マグネシウムなどの絶縁
体を用いると、高純度品を用いても冷熱サイクルを繰り
返すことにより破損を招いてしまう。[0009] The inner heat insulating layer of the evaporation source heat shielding structure has a high temperature (depending on the evaporation raw material and evaporation conditions, etc., usually has a temperature of 130 ° C.).
(0 ° C or higher).
It is necessary to have heat resistance higher than that of the intermediate heat insulating layer, and in particular, it must be made of a material that does not cause breakage due to rapid heating and rapid cooling during heating and cooling. Further, since the raw material is directly exposed to the vaporized raw material gas, some vaporized raw materials require corrosion resistance to the gas (for example, when an oxide such as silicon oxide is deposited, oxidation consumption is small). As the material of the inner heat insulating layer of the evaporation source heat-shielding structure, a material that emits less gas under a high-temperature vacuum must be selected from materials satisfying these conditions. Taking into account heat resistance, corrosion resistance, and gas emission characteristics, as well as the price, workability, and strength of the material, an isotropic graphite plate (graphite isotropic compression molded plate) is most suitable. However, when used in a place where electrical insulation is required, a boron nitride molded body is most suitable. In this case, if an insulator such as aluminum oxide or magnesium oxide is used, even if a high-purity product is used, breakage is caused by repeating the cooling / heating cycle.
【0010】蒸発源遮熱構造体においては、特に、蒸発
原料を蒸発飛行させるための穴である上部開口部の形状
と開口部先端の温度が重要である。蒸発源遮熱構造体の
上部開口部は、蒸着フィルムの品質の均一性を確保する
ため、蒸発粒子の飛行経路を妨害しないように設計され
ていなければならない。具体的には、1.上部開口部
を、蒸発粒子の飛行を妨げないよう、垂直面に対して4
5度以上の角度で傾斜させる。2.蒸発源に最も近い上
部開口部先端の温度を、蒸発粒子が付着堆積しないよ
う、蒸発粒子の蒸発温度以上にする。上部開口部先端の
温度は、ヒーターを用いて蒸発粒子の蒸発温度以上にし
てもよいが、上部開口部先端を蒸発源に接触させ熱伝導
により蒸発粒子の蒸発温度以上にしてもよい。なお、熱
伝導による蒸発源のエネルギー損失を極力少なくするた
め、蒸発源と上部遮熱構造体が接触する面積は可能な限
り小さくすることが好ましい。上記のように設計されて
いない場合、図6及び図7に示すように、水冷された開
口部の金属板または開口部先端に蒸発粒子が衝突付着
し、その上に更に蒸発物が付着することにより付着物の
成長を招く。成長した付着物は、蒸発粒子の飛行を妨害
するため均一な蒸着を阻害し、結果として蒸着膜の品質
の均一性が保てなくなってしまう。In the heat-shielding structure for the evaporation source, the shape of the upper opening, which is a hole for evaporating the evaporated material, and the temperature at the tip of the opening are particularly important. The upper opening of the evaporation source heat shield structure must be designed so as not to obstruct the flight path of the evaporated particles in order to ensure the uniformity of the quality of the deposited film. Specifically, 1. The top opening should be positioned at 4
Incline at an angle of 5 degrees or more. 2. The temperature of the tip of the upper opening closest to the evaporation source is set to be equal to or higher than the evaporation temperature of the evaporation particles so that the evaporation particles do not adhere and deposit. The temperature of the tip of the upper opening may be equal to or higher than the evaporation temperature of the evaporating particles using a heater, or may be equal to or higher than the evaporation temperature of the evaporating particles by contacting the upper end of the upper opening with an evaporation source and conducting heat. In order to minimize the energy loss of the evaporation source due to heat conduction, it is preferable that the area where the evaporation source and the upper heat shield structure come into contact is as small as possible. If not designed as described above, as shown in FIG. 6 and FIG. 7, evaporated particles collide and adhere to the water-cooled metal plate of the opening or the tip of the opening, and further evaporated matter adheres thereon. This causes the growth of deposits. The grown deposits impede the flight of the evaporated particles, thereby hindering uniform deposition, and as a result, the uniformity of the quality of the deposited film cannot be maintained.
【0011】蒸発源遮熱構造体の蒸発源上部を覆う部分
の全厚は、蒸発粒子の飛行経路の保持、蒸発源と冷却ロ
ールとの間の距離を蒸着効率、蒸着フィルム物性などの
観点から蒸発源と蒸着フィルムとを可能な限り接近させ
る必要があるため、できるだけ薄くすることが好まし
い。また、蒸発源遮熱構造体の蒸発源上部を覆う部分
は、蒸発源のメインテナンス時には取り外し、持ち上げ
などの作業が必要となるため、できるだけ軽量であるこ
とが好ましい。図3及び図4に、アルミニウムワイヤー
を連続的に供給する機構を持った抵抗加熱方式の蒸発源
を、本発明の蒸発源遮熱構造体により囲んだ場合の蒸発
源周辺の断面図を示す。この場合、蒸発源遮熱構造体の
上部開口部先端は、蒸発源からの熱伝導による方法で加
熱している。なお、蒸発源遮熱構造体の上部開口部先端
は、ヒーター等の加熱手段により加熱することもでき
る。The total thickness of the portion of the evaporation source heat shielding structure that covers the upper portion of the evaporation source is determined from the viewpoint of maintaining the flight path of the evaporation particles, determining the distance between the evaporation source and the cooling roll from the viewpoints of deposition efficiency, physical properties of the deposited film, and the like. Since it is necessary to make the evaporation source and the deposition film as close as possible, it is preferable to make the evaporation source as thin as possible. In addition, the portion of the evaporation source heat shielding structure that covers the upper portion of the evaporation source needs to be removed and lifted during maintenance of the evaporation source, so that it is preferable that the portion be as light as possible. 3 and 4 are cross-sectional views of the periphery of the evaporation source when the evaporation source of the resistance heating type having the mechanism for continuously supplying the aluminum wire is surrounded by the evaporation source heat shielding structure of the present invention. In this case, the tip of the upper opening of the evaporation source heat shielding structure is heated by a method using heat conduction from the evaporation source. Note that the tip of the upper opening of the evaporation source heat shielding structure can be heated by a heating means such as a heater.
【0012】特開平1−252768号及び特開平2−
277774号に記載されるような、蒸発源を上方から
見た場合に蒸発原料が蒸発しない部分の面積が比較的大
きい蒸発原料連続供給排出機構を備えた抵抗加熱方式の
蒸発源を用いて昇華性蒸発原料を真空蒸着する場合、蒸
発源の高温部分の面積は広くなり、蒸発源遮熱構造体が
受ける熱量も当然増加する。この場合、その熱負荷をで
きるだけ軽減するため、上記のような蒸発源遮熱構造体
の設置に加えて、図1及び図2に示すように、ヒーター
(図1及び図2−A)、るつぼ(図2−B)、ボートな
どの蒸発源の外側に、窒化ホウ素成形体、酸化アルミニ
ウム成形体、酸化マグネシウム成形体などの遮熱成形体
を密着させて設置することができる。その結果、遮熱効
果、保温効果、さらには蒸発源の酸化消耗などのガスに
対する腐食を軽減する効果が得られる。特に、窒化ホウ
素成形体は耐熱性に優れるため、好適に用いられる。透
明蒸着フィルムを製造する場合は、熱線の反射がなく、
蒸着膜は蒸発源からの熱線を基材フィルムと共に吸収し
てしまい、基材フィルムへの熱負荷が大きくなるため、
図1及び図2に示すように蒸発源に蒸発源遮熱構造体を
密着させることにより蒸着フィルムの品質低下を防止す
る効果が大きい。JP-A-1-252768 and JP-A-2-
No. 2,777,774, a sublimation method using a resistance heating type evaporation source having an evaporation material continuous supply / discharge mechanism having a relatively large area of a portion where the evaporation material does not evaporate when the evaporation source is viewed from above. When the evaporation source is vacuum-deposited, the area of the high-temperature portion of the evaporation source is increased, and the amount of heat received by the evaporation source heat shielding structure naturally increases. In this case, in order to reduce the heat load as much as possible, in addition to installing the evaporation source heat shielding structure as described above, as shown in FIGS. 1 and 2, a heater (FIGS. 1 and 2A) and a crucible are used. (FIG. 2-B), a heat-shielding molded body such as a boron nitride molded body, an aluminum oxide molded body, or a magnesium oxide molded body can be closely attached to an outside of an evaporation source such as a boat. As a result, it is possible to obtain a heat shielding effect, a heat retaining effect, and an effect of reducing corrosion to gas such as oxidative consumption of the evaporation source. In particular, a boron nitride molded article is preferably used because of its excellent heat resistance. When manufacturing a transparent evaporated film, there is no reflection of heat rays,
The deposited film absorbs heat rays from the evaporation source together with the base film, and increases the heat load on the base film.
As shown in FIG. 1 and FIG. 2, the effect of preventing the deterioration of the quality of the vapor-deposited film is great by bringing the evaporation source heat shielding structure into close contact with the evaporation source.
【0013】蒸発原料としては、蒸着フィルムとなった
時に透明蒸着フィルムなるもので有れば良く、具体的に
は珪素酸化物、アルミニウム酸化物、マグネシウム酸化
物、チタン酸化物、インジウム酸化物、錫酸化物などの
化合物を単独または混合して使用することができる。ま
た、反応させながら蒸着を行う反応蒸着法を使用する場
合は、珪素、アルミニウム、マグネシウム、チタン、イ
ンジウム、錫などを使用することができる。[0013] The evaporation source may be any material that becomes a transparent vapor deposition film when it becomes a vapor deposition film, and specifically includes silicon oxide, aluminum oxide, magnesium oxide, titanium oxide, indium oxide, and tin. Compounds such as oxides can be used alone or as a mixture. In the case of using a reactive evaporation method in which evaporation is performed while reacting, silicon, aluminum, magnesium, titanium, indium, tin, or the like can be used.
【0014】[0014]
【実施例】以下、実施例に基づいて本発明をさらに詳細
に説明するが、本発明はその要旨を越えない限り、以下
の実施例に限定されるものではない。なお、実施例で得
られた蒸着フィルムの評価および遮熱構造体の観察は、
以下のように行った。酸素バリヤー性:ASTM D
3985に準拠し、米国モダンコントロールズ社のOX
TRAN−TWINを用いて酸素ガス透過率を測定し、
測定値は平均値と最大値−最小値で表した。遮熱構造体
への付着物の観察:真空蒸着加工を開始してから50分
後に、遮熱構造体の上部開口部における蒸着付着物の有
無を目視で観察した。蒸発源に密着させた遮熱成形体の
破損観察:真空蒸着加工後、蒸発源に密着させた遮熱成
形体を解体し、破損の有無を目視で観察した。蒸着フィ
ルムの外観観察:得られた蒸着フィルムの外観を目視で
評価した。EXAMPLES Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to the following examples unless it exceeds the gist. In addition, the evaluation of the vapor deposition film obtained in the examples and observation of the heat shield structure,
The procedure was as follows. Oxygen barrier property: ASTM D
3985 compliant, US Modern Controls OX
Measure the oxygen gas permeability using TRAN-TWIN,
The measured value was represented by an average value and a maximum value-minimum value. Observation of deposits on the heat shield structure: 50 minutes after the start of vacuum vapor deposition, the presence or absence of deposits on the upper opening of the heat shield structure was visually observed. Observation of breakage of the heat shield molded body adhered to the evaporation source: After vacuum deposition, the heat shield molded body adhered to the evaporation source was disassembled and visually inspected for damage. Observation of appearance of deposited film: The appearance of the obtained deposited film was visually evaluated.
【0015】〔実施例1〕図1に示すような、特開平1
−252768号公報に記載される蒸発源(上方から見
た総面積:270cm2 )に蒸発源遮熱構造体を設けた
真空蒸着装置を用い、真空蒸着を行った。蒸発原料に
は、珪素と二酸化珪素(非晶質)との等モル混合物を、
直径40mm,高さ35mmの円柱状に圧縮成形した成
形物を用いた。この成形物を、蒸発原料連続供給排出機
構の供給口から、5mm/分の供給速度で連続供給し
た。蒸発源は、1×10-4torrの真空下で抵抗加熱
により1350℃に加熱し、厚さ12μm、幅1500
mmの2軸延伸ポリエチレンテレフタレートフィルムに
珪素酸化物を真空蒸着した。蒸発源に投入した総電力か
ら計算した蒸発源の発熱量は150kJ/秒であった。
その条件のまま加工速度は50m/分で、1時間真空蒸
着加工を行った。蒸着膜の厚みを水晶式膜厚モニターを
用いて測定したところ、約1000オングストロームで
あった。また、蒸発源遮熱構造体の上部開口部先端の温
度をR熱電対を用いて測定したところ、1280℃であ
り、上部開口部先端には蒸発物の付着はなかった。[First Embodiment] As shown in FIG.
Vacuum evaporation was performed using a vacuum evaporation apparatus provided with an evaporation source heat shield structure in an evaporation source described in Japanese Patent Application Publication No. 252768 (total area as viewed from above: 270 cm 2 ). As an evaporation raw material, an equimolar mixture of silicon and silicon dioxide (amorphous) was used.
A molded product compression-molded into a column having a diameter of 40 mm and a height of 35 mm was used. The molded product was continuously supplied at a supply speed of 5 mm / min from a supply port of a continuous supply and discharge mechanism of the evaporated raw material. The evaporation source is heated to 1350 ° C. by resistance heating under a vacuum of 1 × 10 −4 torr, and has a thickness of 12 μm and a width of 1500.
A silicon oxide was vacuum-deposited on a biaxially stretched polyethylene terephthalate film having a thickness of 2 mm. The calorific value of the evaporation source calculated from the total electric power supplied to the evaporation source was 150 kJ / sec.
Under these conditions, the processing speed was 50 m / min, and vacuum deposition was performed for 1 hour. When the thickness of the deposited film was measured using a quartz crystal film thickness monitor, it was about 1000 Å. Further, the temperature of the tip of the upper opening of the evaporation source heat shielding structure was measured at 1280 ° C. using an R thermocouple, and no evaporant adhered to the tip of the upper opening.
【0016】〔実施例2〕図3及び図4に示すような、
アルミニウムワイヤーを連続供給する機構を備えた抵抗
加熱方式の蒸発源に遮熱構造体を設けた真空蒸着装置を
用い、針金状に巻いてあるアルミニウムワイヤーを供給
口から10mm/分の供給速度で連続供給した。蒸発源
は、1×10-4torrの真空下で抵抗加熱により14
00℃に加熱し、厚さ12μmのポリエチレンテレフタ
レートフィルムにアルミニウムを真空蒸着した。蒸発源
に投入した総電力から計算した蒸発源の発熱量は120
kJ/秒であった。その条件のまま加工速度は100m
/分で、1時間真空蒸着加工を行った。蒸着膜の厚みを
水晶式膜厚モニターを用いて測定したところ、約500
オングストロームであった。また、蒸発源遮熱構造体の
上部開口部先端の温度をR熱電対を用いて測定したとこ
ろ、1320℃であり、上部開口部先端には蒸発物の付
着はなかった。[Embodiment 2] As shown in FIG. 3 and FIG.
Using a vacuum evaporation system equipped with a heat shield structure on a resistance heating type evaporation source equipped with a mechanism for continuously supplying aluminum wires, the aluminum wire wound in a wire shape is continuously fed from the supply port at a supply speed of 10 mm / min. Supplied. The evaporation source was heated by resistance heating under a vacuum of 1 × 10 −4 torr.
Heated to 00 ° C., aluminum was vacuum deposited on a 12 μm thick polyethylene terephthalate film. The calorific value of the evaporation source calculated from the total power input to the evaporation source is 120
kJ / sec. Processing speed is 100m under the same conditions
/ Minute, vacuum deposition was performed for 1 hour. When the thickness of the deposited film was measured using a quartz crystal film thickness monitor, about 500
Angstrom. The temperature of the tip of the upper opening of the evaporation source heat shielding structure was measured using an R thermocouple. As a result, it was found to be 1320 ° C., and no evaporated material was attached to the tip of the upper opening.
【0017】〔実施例3〕実施例1で使用した蒸発源遮
熱構造体のうち蒸発源の外側に密着させた窒化ホウ素成
形体を取り外し、それ以外は実施例1と同様に行った。
蒸発源に投入した総電力から計算した蒸発源の発熱量は
170kJ/秒であった。その条件のまま加工速度は5
0m/分で、1時間真空蒸着加工を行った。蒸着膜の厚
みを水晶式膜厚モニターを用いて測定したところ、約1
000オングストロームであった。また、蒸発源遮熱構
造体の上部開口部先端の温度をR熱電対を用いて測定し
たところ、1340℃であり、上部開口部先端には蒸発
物の付着はなかった。Example 3 The same procedure as in Example 1 was carried out except for removing the boron nitride molded body closely adhered to the outside of the evaporation source from the evaporation source heat shielding structure used in Example 1.
The calorific value of the evaporation source calculated from the total electric power supplied to the evaporation source was 170 kJ / sec. The processing speed is 5 under the same conditions
Vacuum deposition was performed at 0 m / min for 1 hour. The thickness of the deposited film was measured using a quartz crystal film thickness monitor.
000 angstroms. The temperature of the tip of the upper opening of the evaporation source heat shielding structure was measured using an R thermocouple. As a result, the temperature was 1340 ° C., and no evaporated matter was attached to the tip of the upper opening.
【0018】〔実施例4〕実施例1で使用した蒸発源遮
熱構造体のうち蒸発源の外側に密着させた窒化ホウ素成
形体を酸化アルミニウム焼結体に変更し、それ以外は実
施例1と同様に行った。蒸発源に投入した総電力から計
算した蒸発源の発熱量は150kJ/秒であった。その
条件のまま加工速度は50m/分で、1時間真空蒸着加
工を行った。蒸着膜の厚みを水晶式膜厚モニターを用い
て測定したところ、約1000オングストロームであっ
た。また、蒸発源遮熱構造体の上部開口部先端の温度を
R熱電対を用いて測定したところ、1280℃であり、
上部開口部先端には蒸発物の付着はなかった。[Embodiment 4] Among the evaporation source heat shielding structures used in Embodiment 1, the boron nitride molded body closely adhered to the outside of the evaporation source was changed to an aluminum oxide sintered body, and otherwise the same as in Embodiment 1 The same was done. The calorific value of the evaporation source calculated from the total electric power supplied to the evaporation source was 150 kJ / sec. Under these conditions, the processing speed was 50 m / min, and vacuum deposition was performed for 1 hour. When the thickness of the deposited film was measured using a quartz crystal film thickness monitor, it was about 1000 Å. When the temperature of the tip of the upper opening of the evaporation source heat shielding structure was measured using an R thermocouple, it was 1280 ° C.,
No evaporant adhered to the top opening tip.
【0019】〔比較例1〕実施例1で使用した蒸発源遮
熱構造体の上部のみ取り除き、それ以外は実施例1と同
様に行った。蒸発源に投入した総電力から計算した蒸発
源の発熱量は200kJ/秒であった。その条件のまま
加工速度は50m/分で、1時間真空蒸着加工を行っ
た。加工中に、ポリエチレンテレフタレートフィルムの
熱負け現象が起きていることが観察された。蒸着膜の厚
みを水晶式膜厚モニターを用いて測定したところ、約1
000オングストロームであった。Comparative Example 1 The same procedure as in Example 1 was carried out except that only the upper part of the evaporation source heat shielding structure used in Example 1 was removed. The calorific value of the evaporation source calculated from the total electric power supplied to the evaporation source was 200 kJ / sec. Under these conditions, the processing speed was 50 m / min, and vacuum deposition was performed for 1 hour. During processing, it was observed that the polyethylene terephthalate film suffered a heat loss phenomenon. The thickness of the deposited film was measured using a quartz crystal film thickness monitor.
000 angstroms.
【0020】〔比較例2〕実施例1で使用した蒸発源遮
熱構造体の上部開口部を垂直面に対して30度の角度
(蒸発粒子の飛行を妨げる角度)に傾斜させ、それ以外
は実施例1と同様に行った。蒸発源に投入した総電力か
ら計算した蒸発源の発熱量は150kJ/秒であった。
その条件のまま加工速度は50m/分で、1時間真空蒸
着加工を行った。蒸着膜の厚みを水晶式膜厚モニターを
用いて測定したところ、約1000オングストロームで
あった。また、蒸発源遮熱構造体の上部開口部先端の温
度をR熱電対を用いて測定したところ、1280℃であ
った。しかし、蒸発源遮熱構造体の上部開口部には、図
7に示すような蒸発物の付着があった。[Comparative Example 2] The upper opening of the evaporation source heat shielding structure used in Example 1 was inclined at an angle of 30 degrees with respect to the vertical plane (an angle that hinders the flight of evaporated particles). Performed in the same manner as in Example 1. The calorific value of the evaporation source calculated from the total electric power supplied to the evaporation source was 150 kJ / sec.
Under these conditions, the processing speed was 50 m / min, and vacuum deposition was performed for 1 hour. When the thickness of the deposited film was measured using a quartz crystal film thickness monitor, it was about 1000 Å. The temperature of the tip of the upper opening of the evaporation source heat shield was measured using an R thermocouple and found to be 1280 ° C. However, evaporant was adhered to the upper opening of the evaporation source heat shielding structure as shown in FIG.
【0021】〔比較例3〕図5に示すように、実施例1
で使用した蒸発源遮熱構造体の上部開口部が蒸発源と接
触している先端部を削除し、それ以外は実施例1と同様
に行った。蒸発源に投入した総電力から計算した蒸発源
の発熱量は150kJ/秒であった。その条件のまま加
工速度は50m/分で、1時間真空蒸着加工を行った。
蒸着膜の厚みを水晶式膜厚モニターを用いて測定したと
ころ、約1000オングストロームであった。また、蒸
発源遮熱構造体の上部開口部先端の温度をR熱電対を用
いて測定したところ、480℃であり、上部開口部の先
端には図6に示すような蒸発物が付着していた。Comparative Example 3 As shown in FIG.
The procedure was the same as that of Example 1 except that the tip where the upper opening of the evaporation source heat shielding structure used in the above was in contact with the evaporation source was deleted. The calorific value of the evaporation source calculated from the total electric power supplied to the evaporation source was 150 kJ / sec. Under these conditions, the processing speed was 50 m / min, and vacuum deposition was performed for 1 hour.
When the thickness of the deposited film was measured using a quartz crystal film thickness monitor, it was about 1000 Å. When the temperature at the tip of the upper opening of the evaporation source heat shielding structure was measured using an R thermocouple, it was 480 ° C., and evaporant as shown in FIG. 6 was attached to the tip of the upper opening. Was.
【0022】実施例および比較例で得られた蒸着フィル
ムのうち蒸着加工の最後の部分のフィルム幅方向の20
箇所について、酸素バリヤー性試験を行った。また、遮
熱構造体を解体し、各部品の破損について観察を行っ
た。結果を表1に示す。Of the vapor-deposited films obtained in the examples and comparative examples, 20 in the film width direction at the last part of the vapor-deposition process.
An oxygen barrier property test was performed on the portion. In addition, the heat shield structure was disassembled, and each part was observed for damage. Table 1 shows the results.
【表1】 [Table 1]
【0023】[0023]
【発明の効果】本発明により、100kJ/sec以上
の発熱量の大きな蒸発源を用いても、蒸発源周辺部品の
破損、フィルムの皺の発生、バリヤ性能の低下、引き裂
き強度の低下などの品質の低下、品質斑などのトラブル
無しに、熱効率と生産加工速度の高い蒸着加工ができる
ようになった。According to the present invention, even when an evaporation source having a large heating value of 100 kJ / sec or more is used, quality such as breakage of parts around the evaporation source, generation of wrinkles in the film, reduction in barrier performance, reduction in tear strength, etc. The deposition process with high thermal efficiency and high production processing speed can be performed without any troubles such as reduction in quality and uneven quality.
【0024】[0024]
【図1】本発明の遮熱構造体により囲んだ蒸発源の斜視
図。FIG. 1 is a perspective view of an evaporation source surrounded by a heat shielding structure of the present invention.
【図2】本発明の遮熱構造体を密着させた蒸発源の斜視
図。FIG. 2 is a perspective view of an evaporation source to which a heat shielding structure of the present invention is closely attached.
【図3】本発明の遮熱構造体により囲んだ蒸発源の断面
図。FIG. 3 is a cross-sectional view of an evaporation source surrounded by the heat shielding structure of the present invention.
【図4】本発明の遮熱構造体により囲んだ蒸発源の断面
図。FIG. 4 is a cross-sectional view of an evaporation source surrounded by the heat shielding structure of the present invention.
【図5】遮熱構造体の開口部先端が蒸発源と接触しない
ようにして遮熱構造体により囲んだ蒸発源の断面図。FIG. 5 is a cross-sectional view of the evaporation source surrounded by the heat shielding structure so that the opening end of the heat shielding structure does not contact the evaporation source.
【図6】遮熱構造体の開口部先端が蒸発源と接触しない
ようにして遮熱構造体により囲んだ蒸発源の断面図。FIG. 6 is a cross-sectional view of the evaporation source surrounded by the heat shielding structure so that the opening end of the heat shielding structure does not contact the evaporation source.
【図7】垂直面に対して30度の角度で傾斜している開
口部を有する遮熱構造体により囲んだ蒸発源の断面図。FIG. 7 is a cross-sectional view of an evaporation source surrounded by a heat shielding structure having an opening inclined at an angle of 30 degrees with respect to a vertical plane.
1:蒸発源 2:蒸発源遮熱構造体
3:蒸発原料供給部 4:上部開口部 5:金属板 6:グラファイト繊維圧縮成形板
7:等方性黒鉛板 8:窒化ホウ素成形体 9:水冷パイプ 1
0:電極 11:アルミニウム蒸発原料 12:溶融アルミニウム 1
3:付着蒸発物1: evaporation source 2: evaporation source heat shielding structure
3: Evaporation raw material supply unit 4: Upper opening 5: Metal plate 6: Graphite fiber compression molded plate
7: Isotropic graphite plate 8: Boron nitride compact 9: Water-cooled pipe 1
0: Electrode 11: Aluminum evaporation material 12: Molten aluminum 1
3: Adhered evaporant
Claims (2)
囲んでなる真空蒸着装置であって、前記蒸発源遮熱構造
体は、外側から蒸発源へ向って、水冷パイプで冷却され
た金属板、グラファイト繊維圧縮成形板、グラファイト
板または窒化ホウ素成形板の順序で構成されており、か
つ垂直面に対して45度以上の角度で傾斜し蒸発原料が
蒸発する開口部および蒸発原料を供給する開口部を有
し、かつ前記蒸発原料が蒸発する開口部先端の温度が蒸
発粒子の蒸発温度以上であることを特徴とする真空蒸着
装置。1. A vacuum evaporation apparatus comprising an evaporation source surrounded by a box-shaped evaporation source heat shielding structure, wherein said evaporation source heat shielding structure is cooled by a water cooling pipe from the outside toward the evaporation source. Opening and an evaporation material, which are formed in the order of a metal plate, a graphite fiber compression molded plate, a graphite plate or a boron nitride molded plate, which is inclined at an angle of 45 degrees or more with respect to a vertical plane, and in which the evaporated material evaporates. Wherein the temperature at the tip of the opening at which the evaporation material evaporates is equal to or higher than the evaporation temperature of the evaporation particles.
させて設けることを特徴とする請求項1記載の真空蒸着
装置。2. The vacuum deposition apparatus according to claim 1, wherein a boron nitride molded body is provided in close contact with the outside of the evaporation source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12231794A JP3237399B2 (en) | 1994-06-03 | 1994-06-03 | Vacuum deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12231794A JP3237399B2 (en) | 1994-06-03 | 1994-06-03 | Vacuum deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07331415A JPH07331415A (en) | 1995-12-19 |
| JP3237399B2 true JP3237399B2 (en) | 2001-12-10 |
Family
ID=14832969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12231794A Expired - Fee Related JP3237399B2 (en) | 1994-06-03 | 1994-06-03 | Vacuum deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3237399B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4440837B2 (en) | 2005-01-31 | 2010-03-24 | 三星モバイルディスプレイ株式會社 | Evaporation source and vapor deposition apparatus employing the same |
| JP5400749B2 (en) * | 2010-12-01 | 2014-01-29 | 株式会社日立ハイテクノロジーズ | Vapor deposition equipment |
| DE102014007521A1 (en) * | 2014-05-23 | 2015-11-26 | Manz Ag | Evaporator source for the surface treatment of substrates |
| DE102014007522A1 (en) * | 2014-05-23 | 2015-11-26 | Manz Ag | Carrier arrangement for an evaporator source |
| KR101684245B1 (en) * | 2015-09-30 | 2016-12-09 | 주식회사 선익시스템 | Chemical Vapor Deposition Apparatus |
-
1994
- 1994-06-03 JP JP12231794A patent/JP3237399B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07331415A (en) | 1995-12-19 |
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