JP3240980B2 - Method of manufacturing semiconductor module device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a semiconductor module device suitable for use in the fields of optical communication and optical measurement.

[0002]

2. Description of the Related Art In the field of optical communication and optical measurement, generally,
A method of transmitting data by modulated light via an optical fiber is used. In this case, as a light source device for modulated light, light generated from an active layer on one side of a light emitting element formed of a semiconductor laser (forward light) is coupled to an optical fiber and transmitted, and the intensity of the forward light is kept constant. The intensity of the light (backlight) generated from the active layer on the other side of the light emitting element, which is related, is monitored via the light receiving element, and the detection current is fed back to the driving power supply of the light emitting element, so that the driving current for the light emitting element is 2. Description of the Related Art Semiconductor module devices in which the intensity of light generated by a light-emitting element is kept constant by controlling a value are often used.

Hereinafter, a conventional semiconductor module device will be described. 7 to 9 are cross-sectional views each showing a configuration of a conventional semiconductor module device. First, FIG.
1 shows a configuration of a semiconductor module device described in Japanese Patent Application Laid-Open No. 62-139375 (hereinafter, referred to as a first publication). In this semiconductor module device, a light emitting element 1 which is a laser diode (hereinafter, referred to as an LD) is used. , A first lens 36 for converging the light of the light emitting element 1 provided on the optical axis
And a surface incident light receiving element 2A, which is a photodiode (hereinafter, referred to as PD), is mounted in a small hermetic package 35. A second lens 37 made of a cylindrical lens is hermetically sealed and fixed in a through hole provided in the package 35 and coinciding with the optical axis of the light emitting element 1.
The tip of the optical fiber 38 is fixed at the focal position. The hermetic package 35 is hermetically sealed by a sealing cap 39 and fixed to the case 7 via a cooling element 40. Further, the case 7 is covered with a sealing cap 10. In the conventional example described in the first publication, the hermeticity in the package 35 accommodating the light emitting element 1 and the light receiving element 2A is maintained between the sealing cap 39 and the package 35 and between the cylindrical lens 37 and the package 35. Since the optical fiber 38 is disposed outside the hermetically sealed region by the package 35, the hermeticity can be easily ensured.

Next, FIG. 8 shows a configuration of a semiconductor module device described in Japanese Patent Application Laid-Open No. 9-27634 (hereinafter referred to as a second publication).
Light emitting element (LD) 1 and side illuminated light receiving element (PD) 2
Are mounted on the same plane of the mounting material 41. Further, the mount member 41 and the first lens 42 for converging the light of the light emitting element 1 are fixed on the same plane of the metal substrate 43. Further, the metal substrate 43 includes the cooling element 40.
Is fixed to the case 7 via the. A second lens 44 optically coupled to the first lens 42 and a second lens 44 at positions on the side surface of the case 7 corresponding to the optical axis of the first lens 42;
And an optical fiber 38 for optically coupling are fixed by an airtight fiber holder 45. The case 7 is hermetically sealed by a sealing cap 10. In the conventional example described in the second publication, the airtightness in the case 7 that accommodates the light emitting element 1, the light receiving element 2, and the optical fiber 38 is determined between the sealing cap 10 and the case 7, and between the case 7 and the fiber holder 45. Are retained in each part, so that the fiber holder 4
Since 5 is fixed to the case 7 irrespective of the optical axis adjustment, it is easy to secure airtightness.

FIG. 9 shows the configuration of still another conventional semiconductor module device. In this semiconductor module device, instead of optically coupling a light emitting element and an optical fiber via a lens, as shown in FIG. The light emitting element 1 and the optical fiber are automatically required by mechanically positioning the light emitting element 1 and the optical fiber on the same plane of the silicon substrate 4 without performing an optical positioning operation. This is different from the techniques described in the above first and second publications in that the structure is arranged in a coupled state.
That is, as shown in the figure, a light emitting element (LD) 1 and a side illuminated light receiving element (PD) 2 are mounted on a plane portion of a silicon substrate 4 and anisotropically etched. In the V-groove 11 formed on the silicon surface, the optical fiber core wire 3 whose tip is tapered and whose tip is spherical is disposed. The silicon substrate 4 is fixed in the case 7. Case 7
Is hermetically sealed by a sealing cap 10. The fiber coating 8 is hermetically sealed and fixed to the side surface of the case 7 via a fiber holder 45. The light of the light-emitting element 1 is efficiently optically coupled to the optical fiber core wire 3 by rounding. By adjusting the height of the active layer of the light emitting element 2 and the height of the light receiving layer of the side-illuminated light receiving element 2, monitor light can be efficiently detected. In the semiconductor module device having such a structure, the fiber assembly can be performed without checking the coupling state by the output light from the optical fiber, so that the assembly process can be simplified. Also, since the number of parts such as lenses can be extremely reduced, the size of the apparatus can be reduced,
The price can be reduced. In this conventional example, the airtightness in the case 7 is determined between the sealing cap 10 and the case 7, between the case 7 and the fiber holder 45, and between the sealing cap 10 and the fiber holder 45.
5 and the fiber coating 8 (FIG. 9).

[0006]

However, in the conventional device (FIG. 7) described in the first publication, since the light emitting element and the light receiving element are not arranged on the same plane, a surface-incident type light receiving element is used. In addition, since the light emitting element and the optical fiber are optically coupled via the lens, it is difficult to reduce the size and the structure of the semiconductor module device.

In the conventional device (FIG. 8) described in the second publication, the light emitting element and the optical fiber are optically coupled via a lens, and the optical fiber is located outside the hermetically sealed area. In addition, there has been a drawback that the optical axis adjustment is difficult with the increase in the number of components, and therefore, it is not suitable for miniaturization and simplification of the structure of the semiconductor module device.

In the conventional device shown in FIG. 9, instead of optically coupling a light emitting element and an optical fiber via a lens, a light emitting element and a light receiving element are arranged on a substrate surface, and the optical fiber is placed on the substrate surface. By arranging in the provided V-groove, the light emitting element and the optical fiber are mechanically positioned and automatically arranged in a required coupling state. Since the coated part of the optical fiber is fixed by the fiber holder provided penetrating the side surface of the housed case, after positioning the fiber core wire, between the case and the fiber holder and between the fiber holder and the fiber coated part. When performing airtight processing, airtightness may deteriorate due to imperfect alignment between the case and the fiber holder and between the fiber holder and the fiber coating. If the position of the fiber core is determined after performing airtight processing between the case and the fiber holder and between the fiber holder and the fiber coating, the position of the fiber core is fixed. May interfere with the optical coupling with For this reason, there is a drawback that it is difficult to achieve both airtightness in the case and securing the alignment accuracy between the light emitting element and the fiber core via the V groove.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned circumstances, and it is possible to reduce the size and structure of a device and to reduce the light-emitting element and optical fiber without sacrificing the confidentiality in a package. It is an object of the present invention to provide a method of manufacturing a semiconductor module device which can ensure the alignment accuracy with the semiconductor module device.

[0010]

[0011]

[0012]

[0013]

[0014]

[0015]

According to a first aspect of the present invention, there is provided a method for manufacturing a semiconductor module, comprising: a light emitting element and an optical fiber; In the above, after the core wire of the optical fiber is accommodated in the groove having the inclined side surface provided on the substrate and the alignment is performed, it is metallized in advance before the alignment is performed around the optical fiber core wire. By heating and melting the solder, the optical fiber core wire is welded to the groove portion of the metallized portion for soldering the sealing cap provided on the substrate, and the optical fiber core wire and the groove portion are welded to each other. It is characterized in that the gap is filled and the optical fiber core is fixed.

According to a second aspect of the present invention, there is provided the method for manufacturing a semiconductor module device according to the first aspect, wherein the metallizing portion for soldering the sealing cap is metallized in advance before performing the alignment. It is characterized by being.

According to a third aspect of the present invention, there is provided the method of manufacturing a semiconductor module device according to the first or second aspect, wherein the light emitting element and the end of the optical fiber core wire are hermetically sealed by the sealing cap. It is characterized by doing.

[0018]

According to the method of manufacturing a semiconductor module device of the present invention, a light emitting element, a light receiving element and an optical fiber, or a light emitting element, a light receiving element and an optical waveguide, or a light receiving element array and an optical fiber are arranged on the same plane of a substrate. Since the airtight sealing is performed on the substrate, the airtight region can be limited to only the substrate. Therefore, it is not necessary to provide the other parts of the package with airtightness, and the problem of poor airtightness can be reduced. In addition, since the optical fiber is fixed on the substrate with the solder at the same time as the hermetic sealing, the positional accuracy of the optical fiber housed in the groove having the inclined side surface (for example, the V groove) can be maintained as it is. Further, since the optical fiber or the optical waveguide can be included in the hermetic region, the optical coupling can be simplified, and the number of components can be reduced and the device can be downsized.

[0019]

Embodiments of the present invention will be described below with reference to the drawings. The description will be made specifically using an embodiment. First Embodiment FIG. 1 is a cross-sectional view illustrating a configuration of a semiconductor module device according to a first embodiment of the present invention. FIG. 2 is a diagram illustrating a surface appearance configuration of a silicon substrate used in the semiconductor module device. (A) is a plan view of the silicon substrate, and (b) is (a)
3 is a cross-sectional view taken along line AA of FIG. 3, and FIG. 3 is a process diagram showing a method for manufacturing the semiconductor module device in the order of processes. Hereinafter, the configuration of the semiconductor module device of this example will be described with reference to FIG. The silicon substrate 4 has a flat surface on the upper surface, and a V groove 11 is provided on a part of the silicon substrate 4 by anisotropic etching. The light emitting element 1 of the LD and the side illuminated light receiving element 2 of the PIN type PD are arranged such that the active layer of the light emitting element 1 and the light receiving layer of the side illuminated light receiving element 2 face the plane portion of the silicon substrate 4, The monitor light is mounted so that the heights of the two are the same, so that the monitor light can be detected efficiently. V-groove 11 of silicon substrate 4
Inside, an optical fiber core wire 3 having a tapered tip and a front end portion having a spherical tip is disposed, so that light generated from the light emitting element 1 can be efficiently coupled to the optical fiber core wire 3. . Light emitting element 1 and light receiving element 2 on silicon substrate 4
The end of the optical fiber core wire 3 is hermetically sealed by a sealing cap 5 fixed to the silicon substrate 4 via a sealing solder 6. The silicon substrate 4 is fixed in the case 7, and the optical fiber core wire 3 is fixed to the through hole on the side surface of the case 7 by the fiber coating fixing resin 9 at the fiber coating portion 8. Case 7
It is covered by a cover 10.

Next, the surface appearance configuration of the silicon substrate 4 will be described in detail with reference to FIG. The upper surface of the silicon substrate 4 is flat, and a V-groove 11 for accommodating the optical fiber core wire 3 is provided in a part thereof, and a light-emitting element wiring pattern for mounting the light-emitting element is provided on the flat portion. 1
4A and 14B and light receiving element wiring patterns 15A and 15B for mounting the light receiving element are formed in the silicon substrate 4 by diffusing impurities. On the upper surface of the silicon substrate 4, a wiring pattern 14A,
An annular silicon oxide film 13 is provided so as to surround the light emitting element and the light receiving element over the upper surfaces of 14B, 15A, 15B and the slope of the V groove 11, and the sealing cap 5 (see FIG. A metallizing section 17 for soldering 1) is provided. Further, the wiring patterns 14A and 15A are provided with a light emitting element mounting marker 16A and a light receiving element mounting marker 16B, each of which is a non-metallized portion, for use as a reference when mounting the light emitting element and the light receiving element. .

Next, steps up to hermetic sealing in the semiconductor module device of this example will be described with reference to FIG.
When the silicon substrate 4 is irradiated with infrared light from below, the wiring patterns 14A, 14B, 15A, 15B shown in FIG.
Although the metallized portion becomes a shadow, the marker 16A for mounting the light emitting element and the marker 16B for mounting the light receiving element look bright, and therefore, are provided on the lower surfaces of the light emitting element 1 and the side-incident type light receiving element 2 based on these. The electrodes (not shown) and the corresponding wiring patterns are aligned and mounted and bonded (FIG. 3A). Next, V groove 1
1 accommodates the optical fiber core wire 3 and aligns it.
The solder 18 metallized on the outer periphery of the optical fiber core wire 3 is heated and melted, and the metallized portion 1 at the V-groove 11 is formed.
7 to fill the gap between the optical fiber core 3 and the V-groove 11 and at the same time fix the optical fiber core 3 (FIG. 3).
(B)). Finally, the sealing cap 5 is placed on the metallized portion 17 on the flat surface of the silicon substrate 4 in a dry inert gas atmosphere.
, And heat and melt the solder 19 previously metallized around the lower portion of the sealing cap 5, so that the space between the sealing cap 5 and the metallized portion 17 and between the optical fiber core wire 3 and the V-groove 1 are formed.
1 to complete the hermetic sealing between the light emitting element and the light receiving element and a part of the optical fiber core wire 3 (FIG. 3C).

As described above, in this example, since the light emitting element 1, the light receiving element 2, and the optical fiber core 3 are hermetically sealed on the silicon substrate 4 by the sealing cap 5, the silicon substrate 4 is In addition to the housing, the hermetic sealing when the fiber coating portion 8 is penetrated by the side surface of the case 7 can be omitted. That is, it is not necessary to perform a strict airtight treatment between the fiber coating portion 8 and the case 7 and between the case 7 and the cover 10. Therefore, the problem of poor airtightness due to this portion is solved, and the size and structure of the semiconductor module device can be reduced. Specifically, according to the configuration of this example, the material cost of the semiconductor module device could be suppressed to 50% or less. In addition, the rate of occurrence of airtight leak failure was reduced by about 90%.

Second Embodiment FIG. 4 is a sectional view showing a configuration of a semiconductor module device according to a second embodiment of the present invention. The steps up to the configuration of the silicon substrate 4 and hermetic sealing in the semiconductor module device of this example are substantially the same as those of the first embodiment.
The semiconductor module device of this example is, as shown in FIG.
A V-groove 11 is provided in a part of the plane portion of the upper surface of the silicon substrate 4 so that the active layer of the light emitting element 1 and the light receiving layer of the side-illuminated light receiving element 2 face the plane portion of the silicon substrate 4, and A light emitting element 1 and a light receiving element are mounted such that the optical fiber core wire 3 is mounted so that the heights thereof are equal to each other, and the tip of the optical fiber 3 is tapered and the tip of the tip is formed in the V groove 11. 2 and the distal end of the optical fiber core wire 3 are hermetically sealed by a sealing cap 5 fixed to the silicon substrate 4 via a sealing solder 6 to form a device main body first.
The device body is mounted on the lead frame 21 and the first
After electrically connecting the light emitting element 1 and the light receiving element 2 via the wiring pattern in the same manner as in the embodiment, the entire structure including the silicon substrate 4, the sealing cap 5, the fiber covering portion 8, and the lead frame 21 is provided. Are molded and solidified with a resin to form a mold 22.

Thus, in this example, the silicon substrate 4
Since the airtightness between the light emitting element 1, the light receiving element 2, and the distal end of the optical fiber core wire 3 is secured by the sealing cap 5, the semiconductor module device can be formed by molding, and the cost of the semiconductor module device is greatly reduced. Can be reduced.

Third Embodiment FIG. 5 is a sectional view showing a configuration of a semiconductor module device according to a third embodiment of the present invention. In the semiconductor module device of this example, as shown in the figure, the upper surface of the silicon substrate 4 is formed of a flat portion, and the optical waveguide 23 is formed in a part thereof. The light emitting element 1 of the LD and the side illuminated light receiving element 2 of the PIN type PD are arranged such that the active layer of the light emitting element 1 and the light receiving layer of the side illuminated light receiving element 2 face the plane portion of the silicon substrate 4, They are mounted so that their heights are the same, so that monitor light can be detected efficiently. The optical waveguide 23 is arranged such that one end can be efficiently coupled to the active layer of the light emitting element 1. Further, the optical fiber core 3 is accommodated in the V-groove on the upper surface of the V-groove block 24 arranged close to the silicon substrate 4 so that the optical fiber core 3 can be efficiently coupled to the other end of the optical waveguide 23. Thus, the light generated by the light emitting element 1 can be efficiently transmitted to the optical fiber core wire 3. The light emitting element 1, the light receiving element 2, and the tip of the optical waveguide 23 on the silicon substrate 4 are hermetically sealed by a sealing cap 5 fixed to the silicon substrate 4 via a sealing solder 6. The silicon substrate 4 and the V-groove block 24 are fixed in the case 7, and the optical fiber core wire 3 is fixed to the through hole on the side surface of the case 7 by the fiber coating fixing resin 9 at the fiber coating portion 8. ing. The case 7 is covered by a cover 10.

The assembly up to the hermetic sealing of the semiconductor module device of this embodiment is performed as follows. First, the light emitting element 1 and the light receiving element 2 are mounted and bonded to the respective wiring patterns with reference to the markers of the wiring patterns provided on the substrate. Next, the sealing cap 5 is welded on the silicon substrate 4 by heating and melting the sealing solder disposed under the sealing cap 5 so as to fill the gaps between the sealing cap 5 and the silicon substrate 4 and the optical waveguide 23. Thereby, the light emitting element 1, the light receiving element 2, and a part of the optical waveguide 23 are hermetically sealed.

As described above, in this example, the hermetic sealing need only be performed on the light emitting element 1 and the side-incident type light receiving element 2, and the hermetic sealing is more effective than in the first embodiment. In addition to simplicity, it is not necessary to perform strict airtight treatment between the fiber coating portion 8 and the case 7 and between the case 7 and the cover 10. Therefore, the problem of poor airtightness due to this portion is solved, and the size and structure of the semiconductor module device can be reduced.

Fourth Embodiment FIG. 6 is a sectional view showing a configuration of a semiconductor module device according to a fourth embodiment of the present invention. In the semiconductor module of this example, as shown in the figure, the upper surface of the silicon substrate 25 is formed of a flat portion, and a plurality of V-grooves 11A are provided in a part thereof by anisotropic etching. Further, a plurality of output line wiring patterns 27
And the common line wiring pattern 28 are formed in advance by impurity diffusion or the like. On the substrate 25, a light receiving element array 26 including a plurality of light receiving elements such as PDs is arranged. In this state, the output terminals of each light receiving element are connected to the output line wiring pattern 27, and the common terminal is connected to the common line. Connected to the wiring pattern 28 for use. Each light receiving element included in the light receiving element array 26 is provided at a position where each light receiving layer can be efficiently coupled to the optical fiber core wire 3A with respect to the optical fiber core wire 3A housed in each V groove 11A. The substrate 25 is fixed in the case 7, and each optical fiber core wire 3 </ b> A is fixed to a through hole on the side surface of the case 7 at a portion of each fiber coating portion (not shown) with a fiber coating fixing resin (not shown). ing. Further, the output line wiring pattern 27 and the common line wiring pattern 28 are connected to the output line terminal fittings 29 and the common line terminal fittings 30 mounted in the case 7 in advance by bonding wires 31. . Further, a cover (not shown) covers the case 7 if necessary.

The assembly up to the hermetic sealing of the semiconductor module device of this example is performed as follows. First, the light receiving elements constituting the light receiving element array 26 are aligned with the respective wiring patterns by markers of a wiring pattern (not shown) provided on the substrate 25, and the light receiving element array 26 is mounted and bonded on the substrate 25. I do. next,
The optical fiber core wire 3A is accommodated in each V-groove 11A, and the solder (not shown) disposed on the outer periphery of the optical fiber core wire 3A is heated and melted to fill the gap between the optical fiber core wire 3A and the V-groove 11A. At the same time, the optical fiber core wire 3A is fixed. Further, the sealing cap 5 is placed so as to cover the light receiving element array 26 and a part of the optical fiber core wire 3A, and a solder (not shown) disposed thereunder is heated and melted, and the solder is formed on the substrate 25 in advance. Airtight sealing by welding to a metallized portion (not shown).

As described above, in this example, the light receiving element array 26 and the optical fiber core wire 3A are hermetically sealed by the sealing cap 5 on the substrate 25. Hermetic sealing at the time of penetrating the portion can be omitted. That is, it is not necessary to perform a strict airtight treatment between the fiber coating portion and the case, and between the case and the cover. Therefore, the problem of poor airtightness due to this portion is solved, and the size and structure of the semiconductor module device can be reduced.

Although the embodiment of the present invention has been described in detail with reference to the drawings, the specific structure is not limited to this embodiment, and there are design changes and the like without departing from the gist of the present invention. Even this is included in the present invention. For example, the material of the sealing cap may be any material that has airtightness and a necessary degree of strength, and may be ceramic, metal, or the like. Also, the shape of the sealing cap is not particularly limited,
A rectangular dish, circular dish, or the like can be used. The optical fiber is preferably a single mode type, but a multi mode type may be used depending on the characteristics of the light emitting element and the light receiving element. Further, the structure can be used in either a step index type or a graded index type. Further, in the above-described embodiment, the case where the optical fiber core wire is accommodated in the V-groove has been described. Alternatively, the coated optical fiber itself may be accommodated in the V-groove. Further, in the above-described embodiment, the V-groove is used as the accommodation portion for the optical fiber core wire. However, the groove is not limited to the V-groove and may be a U-groove, a semi-elliptical groove, or another groove as long as the groove has an inclined side surface.

[0032]

As described above, according to the method of manufacturing a semiconductor module device of the present invention, a light emitting element, a light receiving element, a light receiving element array, a fiber core wire, an optical waveguide, and the like, which are arranged on the same plane of a substrate, are manufactured. Since the hermetic sealing is performed on the substrate, the hermetic region can be limited to only the substrate, and as a result, the rate of occurrence of hermetic leak failure can be significantly reduced. In addition, including the fiber core in the hermetic area,
Since the optical coupling between the light emitting element, the light receiving element and the fiber core is performed without a lens, the configuration of the semiconductor module element can be simplified, and in addition, the number of parts can be reduced and the apparatus can be downsized. . Therefore, the material cost of the semiconductor module device can be significantly reduced.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a schematic configuration of a semiconductor module device according to a first embodiment of the present invention.

FIGS. 2A and 2B are diagrams showing a surface appearance configuration of a silicon substrate used in the semiconductor module device, wherein FIG. 2A is a plan view of the silicon substrate and FIG. 2B is a cross section taken along line AA of FIG. FIG.

FIG. 3 is a process chart showing a method for manufacturing the semiconductor module device in the order of steps.

FIG. 4 is a sectional view showing a schematic configuration of a semiconductor module device according to a second embodiment of the present invention.

FIG. 5 is a sectional view showing a schematic configuration of a semiconductor module device according to a third embodiment of the present invention.

FIG. 6 is a sectional view showing a schematic configuration of a semiconductor module device according to a fourth embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a configuration of a conventional semiconductor module device.

FIG. 8 is a cross-sectional view showing a configuration of another conventional semiconductor module device.

FIG. 9 is a cross-sectional view showing a configuration of still another conventional semiconductor module device.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 light emitting element 2 side incident light receiving element (light receiving element) 3 optical fiber core wire 4 silicon substrate (substrate) 5 sealing cap (sealing member) 11 V groove 14 A, 14 B, 15 A, 15 B wiring pattern 16 A marker for light emitting element mounting (Marker) 16B Light-receiving element mounting marker (marker) 18 Solder 19 Solder 21 Lead frame 23 Optical waveguide 25 Substrate 26 Light-receiving element array

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-7-198973 (JP, A) JP-A-7-198997 (JP, A) JP-A-4-212905 (JP, A) JP-A-60-1985 21013 (JP, A) JP-A-2-118607 (JP, A) JP-A-9-223806 (JP, A) JP-A-9-61651 (JP, A) JP-A-6-236933 (JP, A) JP-A-7-86693 (JP, A) JP-A-11-97797 (JP, A) JP-A-9-148592 (JP, A) JP-A-9-307122 (JP, A) JP-A 8-181388 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01S 5/00-5/50 H01L 31/00-31/024 H01L 33/00 G02B 6/42

Claims (3)

(57) [Claims] 1. A method for manufacturing a semiconductor module device comprising a light emitting element and an optical fiber coupled to each other, wherein the core wire of the optical fiber is accommodated in a groove having an inclined side surface provided on a substrate, and alignment is performed. After that, before performing the alignment on the outer periphery of the optical fiber core wire, by heating and dissolving the solder which is previously metallized and arranged, the sealing cap provided on the substrate is soldered to the optical fiber core wire. Forming a gap between the optical fiber core wire and the groove by fixing the optical fiber core wire by welding the metal fiber portion to the groove portion of the metallized portion. 2. The method of manufacturing a semiconductor module device according to claim 1, wherein a metallized portion for soldering the sealing cap is metallized in advance before performing the alignment. 3. The method for manufacturing a semiconductor module device according to claim 1, wherein the light emitting element and a tip end of the optical fiber core wire are hermetically sealed by the sealing cap.