JP3242458B2 - Manufacturing method of metallized ceramic substrate - Google Patents
Manufacturing method of metallized ceramic substrateInfo
- Publication number
- JP3242458B2 JP3242458B2 JP21935092A JP21935092A JP3242458B2 JP 3242458 B2 JP3242458 B2 JP 3242458B2 JP 21935092 A JP21935092 A JP 21935092A JP 21935092 A JP21935092 A JP 21935092A JP 3242458 B2 JP3242458 B2 JP 3242458B2
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- metallized ceramic
- etching process
- metal film
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 59
- 239000000919 ceramic Substances 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 18
- 238000007788 roughening Methods 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 7
- 238000011282 treatment Methods 0.000 claims description 6
- 238000000992 sputter etching Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 235000011007 phosphoric acid Nutrition 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000003486 chemical etching Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は、セラミック基板の表
面に金属膜を形成してなるメタライズドセラミック基板
の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a metallized ceramic substrate having a metal film formed on a surface of a ceramic substrate.
【０００２】[0002]
【従来の技術】セラミック配線板では、普通、セラミッ
ク基板の表面に導電性ペーストをスクリーン印刷機を用
いて所定のパターンで印刷して導体回路を形成する方
法、すなわち、いわゆる厚膜法が利用されている。しか
しながら、厚膜法の場合、スクリーン印刷の網目の影響
で回路精度が余り良くなくて回路を微細化することが難
しいし、加えて、導体回路の抵抗値が高いという欠点が
ある。抵抗値が高くなるのは、焼成温度で溶解しセラミ
ック基板に融着する非導電性ガラス成分が導電性ペース
トに含まれているため、純金属の導体回路に比べ、非導
電性ガラス成分の含有量分だけ抵抗値が高くなるのであ
る。2. Description of the Related Art In a ceramic wiring board, a method of forming a conductive circuit by printing a conductive paste on a surface of a ceramic substrate in a predetermined pattern using a screen printing machine, that is, a so-called thick film method is generally used. ing. However, in the case of the thick film method, the circuit accuracy is not so good due to the influence of the mesh of the screen printing, so that it is difficult to miniaturize the circuit, and in addition, the resistance value of the conductor circuit is high. The higher resistance value is due to the non-conductive glass component that melts at the firing temperature and fuses to the ceramic substrate is contained in the conductive paste. The resistance value increases by the amount.
【０００３】そのため、導体回路の高精度化・微細化と
低抵抗化を図るため、メタライズドセラミック基板、す
なわちセラミック基板の表面に無電解メッキ等の方法で
金属膜が形成されてなるセラミック基板の利用が考えら
れる。メタライズドセラミック基板の場合、高精度の微
細なパターン化が可能な写真法を利用して所定のパター
ンの導体回路形成ができる上、出来た導体回路は実質的
に純金属製であるため抵抗値が低い。[0003] Therefore, in order to increase the precision and miniaturization of the conductor circuit and reduce the resistance, use of a metallized ceramic substrate, that is, a ceramic substrate in which a metal film is formed on the surface of the ceramic substrate by electroless plating or the like. Can be considered. In the case of a metallized ceramic substrate, a conductor circuit of a predetermined pattern can be formed by using a photographic method capable of high-precision fine patterning, and since the formed conductor circuit is substantially made of pure metal, the resistance value is reduced. Low.
【０００４】しかしながら、上のメタライズドセラミッ
ク基板の場合には、金属膜とセラミック基板の密着性
（接着力の強さ）が十分でない。接着力の低い基板は、
部品実装等に支障を来すため、実用性が低い。そこで、
金属膜の密着性を上げるため、金属膜を形成するセラミ
ック基板の表面を予め酸を用いたエッチング処理で粗面
化しておくことが提案されている（特開昭６１−１４０
１９５号公報）。このエッチング処理による粗面化でグ
レインの境界（グレインバウンダリー）が侵食され、こ
こに後で形成される金属膜の一部が入り込むことで、い
わゆるアンカー効果が生じ、金属膜の密着性が向上する
のである。However, in the case of the metallized ceramic substrate described above, the adhesion between the metal film and the ceramic substrate (the strength of the adhesive force) is not sufficient. Substrates with low adhesive strength
It is not practical because it interferes with component mounting. Therefore,
In order to increase the adhesion of the metal film, it has been proposed to roughen the surface of the ceramic substrate on which the metal film is to be formed in advance by etching using an acid (Japanese Patent Application Laid-Open No. 61-140).
195). Grain boundaries (grain boundaries) are eroded by the surface roughening due to the etching treatment, and a part of a metal film to be formed later penetrates here, so that a so-called anchor effect occurs, and the adhesion of the metal film is improved. You do it.
【０００５】ただ、上のようにして、金属膜の密着性を
向上させても、導体回路の形成後に行う厚膜抵抗体の焼
き付け用の加熱処理により、導体回路の一部にふくれ
（隆起）が生じるという問題がある。However, even when the adhesion of the metal film is improved as described above, a part of the conductor circuit is bulged (heated) by a heat treatment for baking the thick film resistor performed after the formation of the conductor circuit. There is a problem that occurs.
【０００６】[0006]
【発明が解決しようとする課題】この発明は、上記事情
に鑑み、セラミック基板の表面に対する金属膜の接着力
が十分であり、導体回路の形成後に行う厚膜抵抗体の焼
き付け用の加熱処理で、導体回路の一部にふくれが生じ
ることが回避可能なメタライズドセラミック基板を得る
ことのできる方法を提供することを課題とする。SUMMARY OF THE INVENTION In view of the above circumstances, the present invention relates to a heat treatment for baking a thick film resistor performed after a conductor circuit is formed, since a metal film has a sufficient adhesive force to the surface of a ceramic substrate. It is another object of the present invention to provide a method for obtaining a metallized ceramic substrate in which blistering can be avoided in a part of a conductor circuit.
【０００７】[0007]
【課題を解決するための手段】前記課題を解決するた
め、この発明にかかるメタライズドセラミック基板の製
造方法では、表面が予め粗面化処理されたセラミック基
板の前記粗面化処理済みの表面に金属膜を形成するにあ
たり、前記粗面化処理として、酸を用いたエッチング処
理による粗面化を施した後に物理的エッチング処理によ
る粗面化をも施すようにしている。In order to solve the above-mentioned problems, in the method of manufacturing a metallized ceramic substrate according to the present invention, a metallized metal is added to the surface of the ceramic substrate whose surface has been roughened in advance. In forming the film, the surface is roughened by etching using an acid and then roughened by physical etching.
【０００８】この発明で使うセラミック基板としては、
アルミナ基板、ジルコニア基板、ムライト基板等の酸化
物系セラミック基板や、窒化アルミニウム基板、炭化ケ
イ素系基板等の非酸化物系セラミック基板などが挙げら
れる。この発明における酸を用いたエッチング処理（化
学的エッチング処理）としては、加熱リン酸を用いたエ
ッチング処理などが挙げられ、物理的エッチング処理と
してはイオンエッチングなどが挙げられるが、これらに
限らない。The ceramic substrate used in the present invention includes:
Examples include an oxide-based ceramic substrate such as an alumina substrate, a zirconia substrate, and a mullite substrate, and a non-oxide-based ceramic substrate such as an aluminum nitride substrate and a silicon carbide substrate. The etching process using an acid (chemical etching process) in the present invention includes an etching process using heated phosphoric acid, and the physical etching process includes, but is not limited to, ion etching.
【０００９】加熱リン酸を用いたエッチング処理で使う
リン酸としては、オルトリン酸、ピロリン酸、メタリン
酸等が挙げられ、これらのうち１種を単独使用したり２
種以上を併用使用したりする。イオンエッチングとして
は、プラズマエッチング、イオンビームエッチング等の
スパッタリング作用を利用する方法が挙げられる。Examples of the phosphoric acid used in the etching treatment using heated phosphoric acid include orthophosphoric acid, pyrophosphoric acid, and metaphosphoric acid.
Or more than one species. Examples of the ion etching include a method using a sputtering action such as plasma etching and ion beam etching.
【００１０】上記のように、二段回の粗面化を施したセ
ラミック基板の表面に、金属膜を形成すれば、メタライ
ズドセラミック基板の完成である。金属膜の形成方法と
しては、無電解メッキや電解メッキなどのメッキ法、蒸
着法、スパッタ法、溶射法などが挙げられる。金属膜の
種類としては、銅膜の他、アルミニウム膜、Ｎｉ膜など
様々な種類の金属膜が挙げられる。As described above, if a metal film is formed on the surface of a ceramic substrate which has been subjected to two-stage roughening, a metallized ceramic substrate is completed. Examples of the method for forming the metal film include a plating method such as electroless plating and electrolytic plating, a vapor deposition method, a sputtering method, and a thermal spraying method. Examples of the type of the metal film include various types of metal films such as an aluminum film and a Ni film in addition to the copper film.
【００１１】[0011]
【作用】この発明のメタライズドセラミック基板の製造
方法の場合、最初の酸を用いたエッチング処理による粗
面化で、図２にみるように、セラミック基板１のグレイ
ンＧ，Ｇの境界が侵食されて隙Ｓが出来、続いて行う物
理的エッチング処理による粗面化で、図３にみるよう
に、各グレインＧ・・の表面に凹凸Ｂが生じる。そのた
め、図１にみるように、両粗面化を施した表面に形成し
た金属膜２は、一部が隙Ｓに入り込む（アンカー効果）
ことで相当の接着力が確保されるとともに、各グレイン
Ｇの表面の凹凸Ｂによるアンカー効果で各微小部分でも
密着した状態となる。相当の接着力が確保されているた
め、部品装着に何ら支障がないし、微細なパターンの導
体回路に加工したあとでも、導体回路は凹凸Ｂでしっか
りとセラミック基板の表面に密着していて、導体回路の
形成後に行う厚膜抵抗体の焼き付け用の加熱処理で導体
回路の一部にふくれが発生することもない。In the method of manufacturing a metallized ceramic substrate according to the present invention, as shown in FIG. 2, the boundaries between the grains G of the ceramic substrate 1 are eroded by the first surface roughening by etching using an acid. As shown in FIG. 3, irregularities B are formed on the surface of each grain G by the roughening by the subsequent physical etching process. Therefore, as shown in FIG. 1, a part of the metal film 2 formed on the surface subjected to the both surface roughening enters the gap S (anchor effect).
As a result, a considerable adhesive force is ensured, and the minute portions are brought into close contact with each other by the anchor effect due to the unevenness B on the surface of each grain G. Since a considerable adhesive strength is secured, there is no hindrance to component mounting, and even after processing into a fine pattern conductor circuit, the conductor circuit is tightly adhered to the surface of the ceramic substrate with unevenness B, The heat treatment for baking the thick film resistor performed after the formation of the circuit does not cause blistering in a part of the conductor circuit.
【００１２】図４にみるように、セラミック基板１１の
表面が化学的なエッチング処理による粗面化だけの場
合、金属膜１２には、グレインＧ間の隙Ｓ単独のアンカ
ー効果による密着性向上しかなく、また、セラミック基
板２１の表面が物理的エッチング処理による粗面化だけ
の場合、図５にみるように、金属膜２２には、グレイン
Ｇの表面の凹凸Ｂのアンカー効果による密着性向上しか
ない。これに対し、この発明のメタライズドセラミック
基板の製造方法の場合、隙Ｓと凹凸Ｂの両アンカー効果
により、十分な接着性の確保とふくれ発生回避を実現す
るのである。As shown in FIG. 4, when the surface of the ceramic substrate 11 is only roughened by a chemical etching process, the metal film 12 only has an improved adhesion due to the anchor effect of the gap S between the grains G alone. In addition, when the surface of the ceramic substrate 21 is only roughened by a physical etching process, as shown in FIG. 5, the metal film 22 only has an improved adhesion due to the anchor effect of the unevenness B on the surface of the grain G. Absent. On the other hand, in the case of the method for manufacturing a metallized ceramic substrate according to the present invention, both the gap S and the irregularity B anchor effect realizes sufficient adhesion and avoids blistering.
【００１３】[0013]
【実施例】以下、この発明の実施例を説明する。勿論、
この発明は、下記の実施例に限らない。 −実施例１− セラミック基板として、縦：４インチ、横：４インチ、
厚み：０．６３５ｍｍの９６％アルミナ基板を用いた。Embodiments of the present invention will be described below. Of course,
The present invention is not limited to the following embodiments. -Example 1-As a ceramic substrate, length: 4 inches, width: 4 inches,
A 96% alumina substrate having a thickness of 0.635 mm was used.
【００１４】まず、８５％オルトリン酸を３００℃に加
熱し、この中にアルミナ基板を３分間浸漬し、アルミナ
基板の表面を粗面化した。この化学的エッチング処理に
よる粗面化に続いて、アルミナ基板を十分に水洗・乾燥
した後、真空チャンバーに入れ、１×１０-4TorrのＡｒ
ガス圧下でイオンビームエッチングによる粗面化を行っ
た。この時のイオンビーム照射条件は、加速電圧１００
０Ｖ、電流密度１ｍＡ／ｃｍ2 、照射時間２０分間であ
る。First, 85% orthophosphoric acid was heated to 300 ° C., and the alumina substrate was immersed therein for 3 minutes to roughen the surface of the alumina substrate. Subsequent to the surface roughening by the chemical etching treatment, the alumina substrate is sufficiently washed with water and dried, then placed in a vacuum chamber, and Ar × 10 4 Torr is applied.
The surface was roughened by ion beam etching under gas pressure. At this time, the ion beam irradiation condition is set to an acceleration voltage of 100
0 V, current density 1 mA / cm 2 , irradiation time 20 minutes.
【００１５】このように、二つの粗面化処理を行ったア
ルミナ基板にメッキ法による銅膜形成（メタライズ処
理）を行い、メタライズドセラミック基板を得た。 −実施例２− 実施例１と同じアルミナ基板を、実施例１と同様に熱リ
ン酸を用いたエッチング処理による粗面化を行い、十分
に水洗・乾燥した後、真空チャンバーに入れ、１×１０
-1TorrのＡｒガス圧下でスパッタエッチングによる粗面
化を行った。この時のスパッタ条件は、高周波（１３Ｍ
Hz）による逆スパッタで入射波２００Ｗ、スパッタ時間
１０分である。この後、実施例１と同様にして、銅膜形
成を行い、メタライズドセラミック基板を得た。As described above, a copper film was formed (metallized) on the alumina substrate which had been subjected to the two surface roughening treatments by plating to obtain a metallized ceramic substrate. -Example 2-The same alumina substrate as in Example 1 was roughened by etching using hot phosphoric acid in the same manner as in Example 1, washed and dried sufficiently, put into a vacuum chamber, and placed in a vacuum chamber. 10
The surface was roughened by sputter etching under an Ar gas pressure of -1 Torr. The sputtering conditions at this time were high frequency (13M
Hz), the incident wave is 200 W, and the sputtering time is 10 minutes. Thereafter, a copper film was formed in the same manner as in Example 1 to obtain a metallized ceramic substrate.
【００１６】−比較例１− 実施例１において、熱リン酸による粗面化を行った後、
イオンビームエッチングによる粗面化は行わずに銅膜形
成を行うようにした他は、実施例１と同様にしてメタラ
イズドセラミック基板を得た。 −比較例２− 実施例１において、熱リン酸による粗面化は行わずに、
イオンビームエッチングによる粗面化だけを行って銅膜
形成を行うようにした他は、実施例１と同様にしてメタ
ライズドセラミック基板を得た。Comparative Example 1 In Example 1, after roughening with hot phosphoric acid,
A metallized ceramic substrate was obtained in the same manner as in Example 1 except that a copper film was formed without performing surface roughening by ion beam etching. -Comparative Example 2-In Example 1, without performing surface roughening with hot phosphoric acid,
A metallized ceramic substrate was obtained in the same manner as in Example 1, except that the copper film was formed only by roughening by ion beam etching.
【００１７】実施例および比較例で得られたメタライズ
ドセラミック基板について、加熱処理し金属膜にふくれ
が生じたか否か（耐熱性）を観察した。なお、加熱処理
の条件は、９５０℃、１０分間である。また、金属膜の
接着力も測定した。結果は、以下のとおりである。 ふくれの有無（耐熱性） 金属膜の接着力 実施例１ ふくれの発生無し ２．５ｋｇ／ｍｍ2 実施例２ ふくれの発生無し ２．４ｋｇ／ｍｍ2 比較例１ ふくれの発生有り ２．１ｋｇ／ｍｍ2 比較例２ ふくれの発生無し ０．５ｋｇ／ｍｍ2 比較例１の場合、金属膜にふくれが生じており、比較例
２の場合、ふくれの発生は無いが、接着力が不十分で部
品実装等の面で実用上支障がある。これに対し、実施例
１，２の場合、ふくれも生じないし、接着力も十分であ
る。The metallized ceramic substrates obtained in Examples and Comparative Examples were subjected to a heat treatment to observe whether or not blisters occurred in the metal film (heat resistance). Note that the condition of the heat treatment is 950 ° C. for 10 minutes. The adhesive strength of the metal film was also measured. The results are as follows. Existence of blister (heat resistance) Adhesive force of metal film Example 1 No blistering 2.5 kg / mm 2 Example 2 No blistering 2.4 kg / mm 2 Comparative example 1 Bulging 2.1 kg / mm for 2 Comparative example 2 blistering occurs without 0.5 kg / mm 2 Comparative example 1, and caused blisters in the metal film, in Comparative example 2, although the occurrence of blistering no component mounting insufficient adhesion There is a problem in terms of practical use. On the other hand, in the case of Examples 1 and 2, no blistering occurs and the adhesive strength is sufficient.
【００１８】[0018]
【発明の効果】以上に述べたように、この発明にかかる
方法で得られたメタライズドセラミック基板は、化学的
なエッチング処理で生じるグレイン間の隙による強固な
アンカー効果で十分な接着性が確保されているだけでな
く、物理的なエッチング処理によるグレイン表面の凹凸
によるアンカー効果で微小部分での密着性も向上してい
るために、導体回路形成後の熱処理の際のふくれ発生が
回避可能となっており、非常に有用である。As described above, the metallized ceramic substrate obtained by the method according to the present invention has sufficient adhesion due to the strong anchor effect due to the gap between the grains generated by the chemical etching treatment. Not only that, but also the adhesion effect on the minute part is improved by the anchor effect due to the unevenness of the grain surface due to the physical etching process, so it is possible to avoid blistering at the time of heat treatment after conductor circuit formation And very useful.
【図１】この発明により得られたメタライズドセラミッ
ク基板をあらわす断面図である。FIG. 1 is a sectional view showing a metallized ceramic substrate obtained by the present invention.
【図２】酸を用いたエッチング処理で粗面化したセラミ
ック基板の表面近傍をあらわす説明図である。FIG. 2 is an explanatory view showing the vicinity of the surface of a ceramic substrate roughened by an etching process using an acid.
【図３】酸を用いたエッチング処理による粗面化と物理
的エッチング処理による粗面化を施したセラミック基板
の表面近傍をあらわす説明図である。FIG. 3 is an explanatory view showing the vicinity of the surface of a ceramic substrate which has been roughened by an etching process using an acid and roughened by a physical etching process.
【図４】化学的エッチング処理による粗面化のみを施し
たセラミック基板を用いて得たメタライズドセラミック
基板をあらわす断面図である。FIG. 4 is a cross-sectional view showing a metallized ceramic substrate obtained by using a ceramic substrate subjected to only a roughening process by a chemical etching process.
【図５】物理的エッチング処理による粗面化のみを施し
たセラミック基板を用いて得たメタライズドセラミック
基板をあらわす断面図である。FIG. 5 is a cross-sectional view showing a metallized ceramic substrate obtained by using a ceramic substrate subjected to only roughening by a physical etching process.
１ セラミック基板 ２ 金属膜 Ｂ 凹凸 Ｇ グレイン Ｓ 隙 Reference Signs List 1 ceramic substrate 2 metal film B unevenness G grain S gap
Claims (2)
基板の前記粗面化処理済みの表面に金属膜を形成するよ
うにするメタライズドセラミック基板の製造方法におい
て、前記粗面化処理が、酸を用いたエッチング処理によ
る粗面化を施した後に物理的エッチング処理による粗面
化をも施す処理であることを特徴とするメタライズドセ
ラミック基板の製造方法。1. A method for manufacturing a metallized ceramic substrate, wherein a metal film is formed on the roughened surface of a ceramic substrate whose surface has been roughened in advance, wherein the roughening treatment is performed using an acid. A method for manufacturing a metallized ceramic substrate, characterized in that the metallized ceramic substrate is subjected to a surface roughening by an etching process using a metal, and then a surface roughening by a physical etching process.
を用いたエッチング処理であり、物理的エッチング処理
がイオンエッチングである請求項１記載のメタライズド
セラミック基板の製造方法。2. The method for manufacturing a metallized ceramic substrate according to claim 1, wherein the etching process using an acid is an etching process using heated phosphoric acid, and the physical etching process is an ion etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21935092A JP3242458B2 (en) | 1992-08-18 | 1992-08-18 | Manufacturing method of metallized ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21935092A JP3242458B2 (en) | 1992-08-18 | 1992-08-18 | Manufacturing method of metallized ceramic substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0664988A JPH0664988A (en) | 1994-03-08 |
| JP3242458B2 true JP3242458B2 (en) | 2001-12-25 |
Family
ID=16734072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21935092A Expired - Fee Related JP3242458B2 (en) | 1992-08-18 | 1992-08-18 | Manufacturing method of metallized ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3242458B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2525398B1 (en) * | 2010-01-13 | 2018-09-05 | Kyocera Corporation | Silicon nitride substrate, circuit substrate and electronic device using same |
| US10426043B2 (en) * | 2016-08-19 | 2019-09-24 | Honeywell Federal Manufacturing & Technologies, Llc | Method of thin film adhesion pretreatment |
| JP7844624B2 (en) * | 2022-03-28 | 2026-04-13 | 京セラ株式会社 | Ceramic structure |
| CN116230643A (en) * | 2023-03-09 | 2023-06-06 | 东科半导体(安徽)股份有限公司 | Ceramic substrate for GaN device and preparation method thereof, GaN device and preparation method thereof |
-
1992
- 1992-08-18 JP JP21935092A patent/JP3242458B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0664988A (en) | 1994-03-08 |
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