JP3243471B2 - Method for manufacturing electron-emitting device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION This invention is a display, vacuum tubes, it relates to a manufacturing how electron-emitting devices of the cold cathode electron source used in a semiconductor manufacturing device or the like.

[0002]

2. Description of the Related Art FIG. 14 is a sectional view showing a conventional electron-emitting device described in, for example, Japanese Patent Application Laid-Open No. 4-94033. In the figure, 12 is an emitter, 13 is a low-resistance Si substrate, 14 is an insulating film, and 15 is a gate electrode provided around the emitter 12 with a space therebetween, for example, provided so that the inner diameter is about 2 μm. . Reference numeral 20 denotes an anode plate provided facing the emitter 12, and reference numeral 73 denotes a thermal oxide film provided in a step of forming the emitter. Emitter 12 is Si substrate 13
Is etched, and the radius of curvature of the tip is set to, for example, 100.
It is formed in a conical shape that is sharpened below nm.

Next, the operation will be described. Si substrate 13
When a voltage is applied between the gate electrode 15 and the gate electrode 15 so that the gate electrode side becomes positive, the resistance between the Si substrate 13 and the emitter 12 is low. It takes Further, the emitter 12
Is sharp, the electric field between the tip of the emitter 12 and the gate electrode 15 is concentrated in the space near the tip of the emitter 12. When the voltage of the gate electrode 15 is further increased, the emission of electrons from the tip of the emitter 12 by the tunnel effect starts. At this time, if a positive voltage is applied to the anode plate 20, the emitted electrons flow to the anode plate 20, and the anode current is observed. The Si substrate 13 is grounded, a voltage of 200 V is applied to the anode plate 20 with respect to the gate electrode 15,
When the anode current is measured by sequentially increasing the voltage (gate voltage) of the gate electrode 15 from 0 V, the gate voltage becomes 8
When the voltage exceeded 0 V, an anode current began to be observed. By modulating the gate voltage across the voltage at which the anode current starts to be observed, this element can be made to act as an electron source.

FIG. 15 is a sectional view showing a method of manufacturing the electron-emitting device in the order of steps. In FIG. 15A, a circular mask 71 made of a SiO ₂ film is formed on the low-resistance Si substrate 13 by a thermal oxidation process, a lithography process, and a dry etching process. In FIG. 15B, the Si substrate 13 is subjected to reactive ion etching (hereinafter referred to as RIE) using the circular pattern 71 of the SiO ₂ film as a mask.
A cone 72 serving as an emitter is formed under the mask 71. Next, a thermal oxide film 73 is provided on the surface of the cone 72 by a thermal oxidation process to obtain the one shown in FIG. In this state, the insulating film 14 and the gate electrode 15 are deposited (FIG. 15D). Thereafter, the insulating film material and the gate electrode material formed on the mask 71 by wet etching are lifted off, and the thermal oxide film 73 is formed. And Figure 1
An electron-emitting device shown in FIG. 5E is obtained.

In the above-mentioned electron-emitting device, the magnitude of the gate voltage at which the anode current starts to be observed is about 80 V, which is a large value. For this reason, an expensive high voltage type drive circuit is required as a drive circuit for driving the gate voltage, and as a result, the price of a device using an electron-emitting device, such as a display or a vacuum tube, is high.
The magnitude of the electric field strength in the space near the tip of the emitter depends on the radius of curvature of the tip of the emitter. Therefore, when the radius of curvature at the tip of the emitter is reduced, the magnitude of the voltage at which the anode current starts to be observed decreases. However, as described above, the conventional electron-emitting device has an R element shown in FIG.
IE, thermal oxidation treatment shown in FIG. 15 (c) and FIG.
The radius of curvature of the tip of the emitter is determined by the processing accuracy in the wet etching. If the etching depth of the RIE is increased or the thermal oxide film in the thermal oxidation process is slightly thicker than the ideal value, the height of the emitter is sharply reduced by the sharpened tip and the concentration of the electric field is deteriorated. Therefore, it is not desirable to reduce the radius of curvature of the emitter to the processing accuracy limit. Therefore, the magnitude of the voltage at which the anode current starts to be observed could not be too small.

On the other hand, a publication (J. Vac. Sci. Te
chnol. B12 (2), Mar / Aprl, 199
4th year, pp. 662 to 665). In this method, the tip of an emitter provided on a p-type Si substrate is formed into a porous shape composed of a collection of fine fibers having a diameter of several nm by anodization. And
By setting the radius of curvature at the tip of the emitter to that of the microfiber, the electric field is concentrated, and the magnitude of the gate voltage at which the anode current starts to be observed is reduced. However, since p-type Si is used in this element, when an electric field is applied, a depletion layer is formed near the surface of the emitter. Since the depletion layer impedes the supply of electrons from the inside, the anode current is saturated when the gate voltage is increased, and the anode current fluctuates due to ambient temperature or light.

[0007]

The conventional electron-emitting device is configured as described above, and has a problem that the gate voltage at which the anode current starts to be observed is large. Further, in the case where a porous Si layer is formed at the tip of the emitter of p-type Si, the gate voltage at which the anode current starts to be observed can be lowered, but the anode current is saturated or the temperature is affected by ambient temperature or light. There was a problem.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems. The gate voltage at which the anode current starts to be observed without saturating the anode current and without being affected by ambient temperature or light. aims at obtaining a low electron-emitting devices of, and to provide a further manufacturing how suitable for this electron-emitting device.

[0009]

According to a first aspect of the present invention, there is provided a method of manufacturing an electron-emitting device, comprising the steps of: forming a mask on an emitter forming portion of an n-type Si substrate;
A step of forming a cone in an emitter formation portion under a mask by dry etching of a substrate, a step of providing a thermal oxide film on an electron emission side of an n-type Si substrate having a cone formed by thermal oxidation, and a step of forming a thermal oxide film A step of sequentially depositing an insulating film and a gate electrode on the electron emission side of the type Si substrate, a step of exposing the protruding n-type Si substrate of the emitter formation part by removing the thermal oxide film and the mask of the emitter formation part by etching,
And performing a step of forming a porous Si layer by anodizing while irradiating the exposed portion of the n-type Si substrate with light.

Further , an electron-emitting device according to the invention of claim 2 is provided.
Is a method of anodizing while irradiating light to an n-type Si substrate.
Forming a porous Si layer on the n-type Si substrate,
Emitter formation part of porous Si layer formed on n-type Si substrate
Forming a mask on the substrate, an n-type Si base having the mask formed thereon
Etch the plate to coat the emitter formation under the mask.
Forming the cone, and charging the n-type Si substrate with the cone formed.
A step of sequentially depositing an insulating film and a gate electrode on the electron emission side, and
Process to remove the mask in the
It is a feature.

[Action]

The manufacturing of the electron-emitting device according to the first aspect of the present invention.
Anodizing while irradiating light by the fabrication method
A few nm in diameter at the tip of the emitter on the n-type Si substrate.
Can form a porous Si layer consisting of fine fibrous aggregates
You.

The electron-emitting device according to the second aspect of the present invention.
According to the method of manufacturing a semiconductor device, on an n-type Si substrate,
Of nanofibrils with a diameter of several nanometers at the tip of the emitter
A porous Si layer can be formed.

[0013]

[Embodiment 1] FIG. 1 is a sectional view showing an electron-emitting device according to Embodiment 1 of the present invention. In the figure, reference numeral 12 denotes a field emission emitter made of n-type Si, on the surface of which a porous Si layer 11 is formed. Reference numeral 13 denotes a single crystal Si serving as a substrate, 14 denotes an insulating layer of an insulating film, and 15 denotes a gate electrode. The gate electrode 15 has an opening centered on the tip of the emitter 12 so as to be arranged around the emitter 12 with a space therebetween. Tip of emitter 12 and gate electrode 15
Is about 1 to 0.5 μm. FIG. 2 is an enlarged sectional view showing the porous Si layer 11. As shown in the figure, the porous Si layer 11 has a structure in which Si microfibers having a diameter of several nm and a length of several thousand Å extend from the Si surface.

FIG. 3 is a graph showing the relationship between the anode current before and after forming the porous Si layer 11, that is, the emission current (μA) and the gate voltage (V). This is the Si substrate 1
3 is grounded, and the anode plate is connected to the gate electrode 15 by 20.
A voltage of 0 V was applied, and the anode current was measured while sequentially increasing the voltage (gate voltage) of the gate electrode 15 from 0 V. In the figure, the relationship between the anode current and the gate voltage of the electron-emitting device in which the porous Si layer 11 is formed on the surface of the emitter 12 is plotted by a black square (A).
The relationship between the anode current and the gate voltage of the electron-emitting device before the formation of the porous Si layer 11 is plotted by a white square (B). In B, the anode current starts to be observed when the gate voltage exceeds 80 V, whereas in A, the anode current starts to be observed at 60 V. That is, porous Si
It can be seen that the gate voltage at which the anode current starts to be observed is smaller in the case where the layer 11 is formed than in the case where the layer 11 is formed. Thus, an electron-emitting device having a low gate voltage at which the anode current starts to be observed can be obtained.

As is apparent from FIG. 3, even when the gate voltage is increased, no saturation phenomenon of the anode current is observed. This is because the n-type Si is used for the emitter 12, and depletion unlike the case where p-type Si is used does not collect on the surface of the emitter and does not hinder the supply of electrons. Therefore, the anode current does not saturate, and its characteristics are not affected by ambient temperature or light.

FIG. 4 is a graph showing changes in emission current characteristics using three electron-emitting devices as samples. In the figure, when the gate voltage is V and the anode current is I, the horizontal axis is 1 /
V, and the vertical axis is I / V ² , which is compared by a so-called Fowler-Nordheim plot. The open plot is porous S
This is an electron-emitting device in which the i-layer is not formed, and the black plot indicates the characteristics of the electron-emitting material in which the porous Si layer is formed. As is clear from the figure, in the sample in which the porous Si layer was formed, the anode current increased from a low gate voltage. In addition, it has been observed that the emission current characteristics of the electron-emitting device having the porous Si layer formed thereon are relatively uniform.

Embodiment 2 FIG. A method for manufacturing an electron-emitting device according to Embodiment 2 of the present invention will be described. First, a circular mask made of SiO _{2 is} formed on the emitter forming portion of the n-type Si substrate 13. next,
By performing dry etching, a cone serving as an emitter is formed under the mask. Thereafter, a thermal oxidation film is provided on the surface on the electron emission side of Si by thermal oxidation treatment, and further, an insulating film and a gate electrode are deposited. Next, the thermal oxide film and the mask in the emitter forming portion are removed by wet etching, and the emitter 12 made of n-type Si is formed. next,
In the anodization cell shown in FIG. 5, a porous Si layer was formed on the surface of the emitter 12 by anodization.

The structure of the anodization cell will be described below with reference to the drawings. 31 is an n-type Si substrate on which a field emission emitter is formed, 32 is a cathode, 33 is a constant current source, 35 is an anode, 36 is an electrolyte, 37 is a light source, and 38 is a partition. For example, a Pt (platinum) electrode is used for both the anode 35 and the cathode 32, and an electrolyte solution 36 is an aqueous solution of HF: H ₂ O: C ₂ H ₅ OH = 1: 1: 2. N-type Si substrate 3 on which field emission emitter is formed
1 is a partition 38 for separating the electrolyte 36 into an anode side and a cathode side.
Next, the emitter 12 is installed so as to face the cathode.
A voltage is applied to the sample 31 via the electrolyte 36. Current is 4
Supplied from the constant current source 33 at a current density of 0 mA / cm ² ,
The electricity was supplied for about 30 seconds. During energization, the light source 37 is
More light. Exposure to light increases the number of holes and promotes the reaction. The thickness of the formed porous Si layer is 470 nm. The existence of the porous Si layer has been confirmed by irradiating an Ar laser on a sample that has been subjected to the same process using another Si wafer and emitting light.

Embodiment 3 FIG. FIG. 6 is a sectional view showing an electron-emitting device according to Embodiment 3 of the present invention. This is an example of an electron-emitting device including a columnar emitter 12 having a flat tip. In the figure, 1
Reference numeral 2 denotes a cone-shaped emitter having a flat surface obtained by etching the n-type Si substrate 13, and the entire surface was subjected to anodizing treatment in the same manner as in Example 2 to form a porous Si layer 11. The upper surface of the emitter was a circle having a diameter of about 0.2 to 0.5 μm. The opening diameter of the gate electrode 15 is 2 μm.
Formed.

FIG. 7 is a sectional view showing a method of manufacturing an electron-emitting device according to this embodiment in the order of steps. As shown in FIG. 7A, the emitter formation portion of the n-type Si
_A circular mask 71 made of ₂ is created. Next, FIG.
As shown in (b), the mask 7 is formed by performing RIE.
Form a cone under 1. Thereafter, an insulating film 14 and a gate electrode 15 are deposited (FIG. 7C), and thereafter, the mask 71 is removed by wet etching to form an emitter 12 made of n-type Si having a shape shown in FIG. 7D. I do. Finally, this was subjected to anodization in the same manner as in Example 2 to obtain an emitter 1
A porous Si layer 11 is formed on the surface of FIG.
(E)).

The method for manufacturing an electron-emitting device according to this embodiment eliminates the need for the thermal oxidation process in the manufacturing method according to the second embodiment, and is easy to fabricate. The gate voltage-anode current characteristics of this electron-emitting device were measured,
It was confirmed that the magnitude of the gate voltage at which the anode current began to be observed was improved. Since the thermal oxidation process can be omitted, the production cost can be reduced.
In addition, there is an effect that variations in the height of the emitter due to variations in the thickness of the thermally oxidized film are eliminated, and the yield is improved.

In FIG. 6, the anodizing treatment is performed for the emitter 1
2, the porous Si layer 11 may not be provided on the entire surface. That is, since the position where the electric field is concentrated is the edge of the upper surface of the emitter 12, as shown in FIG. 11 described later, only the upper surface of the emitter 12 may be subjected to anodizing treatment to provide the porous Si layer 11. In addition, the anode current characteristics are improved. 6 and 7, the upper surface of the emitter 12 is circular. However, the present invention is not limited to this. For example, a polygonal shape has the same effect as described above.

Embodiment 4 FIG. In Example 3, the same effect as in Example 3 was obtained even if a columnar emitter was formed by using anisotropic etching for RIE.

Embodiment 5 FIG. FIG. 8 is a sectional view showing an electron-emitting device according to Embodiment 5 of the present invention. This is an example of an electron-emitting device having a planar configuration in which the emitter 12 does not protrude from the surface of the Si substrate 13. The emitter of the electron-emitting device according to this embodiment was subjected to the same anodizing treatment as in the embodiment 2 on the n-type Si substrate 13 to form the porous Si layer 11.

FIG. 9 is a sectional view showing a method of manufacturing an electron-emitting device according to this embodiment in the order of steps. n-type Si substrate 1
9, an insulating film 14 is formed by a CVD method, and a gate electrode 15 is formed by a sputtering method (FIG. 9).
(A)). Next, the gate electrode 1 was formed by photolithography and RIE.
5 and the insulating film 14 are etched (FIG. 9B). Thereafter, a porous Si layer 11 is formed on the exposed surface of the Si substrate 13 by anodization in the same manner as in Example 1, and FIG.
Configuration.

The gate voltage-anode current characteristics of this electron-emitting device were measured, and it was confirmed that the magnitude of the gate voltage at which the anode current began to be observed was improved. The electron-emitting device having such a configuration has an effect that it can be manufactured by a very simple process. In addition, there is an effect that the quality is stabilized because there is no etching step in which process variation easily occurs.

Embodiment 6 FIG. FIG. 10 is a sectional view showing a method of manufacturing an electron-emitting device according to Embodiment 6 of the present invention in the order of steps. Also, FIG.
FIG. 4 is a cross-sectional view illustrating an electron-emitting device manufactured by the manufacturing method according to the embodiment. In this embodiment, anodization is performed before forming the emitter. As shown in FIG. 10A, the surface of the n-type Si substrate 13 is anodized in the same manner as in Example 2 to form the porous Si layer 11. Next, after forming an SiO ₂ film by sputtering, photolithography and sputtering S
By RIE of the iO ₂ film, a diameter of 2 μm
(FIG. 10B). Furthermore,
A cone serving as the emitter 12 is formed on the n-type Si substrate 13 under the mask 71 by RIE, as shown in FIG.
Create a shape. Next, the SiO ₂ film 14 serving as an insulating film
Then, a metal film 15 to be a gate electrode is formed by vacuum evaporation (FIG. 10D). Finally, in FIG. 10E, the mask 71 of the SiO ₂ film is removed by wet etching to form a truncated cone-shaped emitter 12 provided with a porous Si layer made of n-type Si as shown in FIG. In this embodiment, a frustoconical emitter can be obtained by the extremely simple manufacturing method as described above, and an electron-emitting device capable of reducing the magnitude of the gate voltage can be manufactured.

Embodiment 7 FIG. FIG. 12 is a configuration diagram showing a CRT equipped with an electron-emitting device according to Embodiment 7 of the present invention. In the figure, 121
Denotes an electron source composed of the same electron-emitting device as in the first embodiment. The electron source includes an Si substrate 13, an emitter 12 provided with a porous Si layer 11 on its surface, an insulating film 14, a gate electrode 15, and a second insulating film 123. A focusing electrode 122 is provided. The electron source 121 usually has 600 to 2000 emitters arranged in an array, but is omitted here and only one is shown. 1
Reference numerals 24, 125, and 126 denote electrodes of an electron gun for accelerating and focusing electrons emitted from the electron source 121. 12
7, a deflection yoke for deflecting the electron beam; 128, an electron beam emitted from the electron source 121; 129, a fluorescent screen;
Reference numeral 10 denotes a vacuum seal.

Electrons emitted from the emitter 12 of the electron source 121 are first focused by receiving a deceleration electric field by the focusing electrode 122. Further, the electrodes 124, 125,
The light is focused at 126 while being accelerated, and hits the phosphor screen 129 to emit light. The deflection yoke 127 deflects the electron beam 128.

The brightness of the light emitted from the phosphor screen 129 depends on the electron source 121.
Is determined by the magnitude of the current emitted from the. Since the CRT according to this embodiment uses the emitter 12 provided with the porous Si layer in the electron source 121, if the gate electrode 15 is modulated by a high-voltage type drive circuit, the brightness of the CRT is about 5 times the conventional value. It can be about 10 to 10 times brighter. Therefore, when the light is emitted at the conventional luminance, a low-voltage type drive circuit is sufficient, and the cost can be reduced.

Embodiment 8 FIG. FIG. 13 is a sectional view showing a flat display on which an electron-emitting device according to Embodiment 8 of the present invention is mounted. In the figure, reference numeral 12 denotes an n-type Si emitter having a porous Si layer 11 provided on the surface, 13 denotes an n-type Si substrate, 14 denotes an insulating film,
5 is a gate electrode, 131 is a second insulating film, and 132 is a second gate electrode. The first gate electrode 15 and the second gate electrode 132 are formed in a matrix so as to be orthogonal lines, and the ends are connected to an external circuit through a frit seal. The intersection of this line constitutes a pixel. One pixel is configured by arranging about 1000 emitters 12. 133 is a phosphor layer, 134 is a transparent conductive film serving as an anode, and 135 is a face glass. Although not shown, the face glass 135 and the n-type Si substrate 13 have a gap of, for example, 200 μm secured by spacers, are adhered to each other with frit glass at their ends, and the space therebetween is evacuated to a high vacuum.

Next, the operation will be described. Transparent conductive film 1
A voltage of, for example, about 400 V is applied to the n-type Si substrate 13 to form an anode. On the other hand, when a voltage of about 60 V is applied to both the first gate electrode 15 and the second gate electrode 132, as shown in FIG.
The electrons are emitted from. The electrons are directed to the transparent conductive film 134 by the electric field generated by the voltage of the transparent conductive film 134 and cause the phosphor of the phosphor layer 133 to emit light. First gate electrode 1
5 and the voltage of the second gate electrode 132 is 60
When V and the other are 0V, the electric field cancels out
No electrons are emitted. By utilizing this, any pixel among the pixels arranged in a matrix can emit light.

In a conventional flat panel display using an electron-emitting device, 85 V was required as a voltage applied to the gate electrode 15. On the other hand, when the electron-emitting device of the present invention is used, the gate electrode 15 can be operated at a voltage of about 60 V, and the external circuit can be constituted by a low-voltage drive circuit.

[0034]

According to the first aspect of the present invention, an n-type Si substrate
Forming a mask on the emitter formation area of the
Dry etching of the n-type Si substrate
Step of forming a cone in the lower emitter formation section, thermal oxidation
On the electron emission side of the n-type Si substrate
Step of providing thermal oxide film, n-type Si base with thermal oxide film formed
A process of sequentially depositing an insulating film and a gate electrode on the electron emission side of the plate
The thermal oxide film and the mask of the emitter formation portion
And remove the protruding n-type Si substrate of the emitter formation part.
Exposing, and irradiating the exposed portion of the n-type Si substrate with light.
While performing anodizing while forming a porous Si layer
The feature that the anode current is saturated
Anode without being affected by ambient temperature or light
The current starts to be observed.
There is an effect that a manufacturing method can be obtained.

According to the second aspect of the present invention, the n-type Si
Anodize while irradiating the substrate with light to form an n-type Si substrate
Step of forming porous Si layer, formed on n-type Si substrate
Step of forming a mask on the emitter formation portion of the porous Si layer
Etching the n-type Si substrate on which the mask is formed
Forming a cone in the emitter formation below the mask,
An insulating film and a gate are formed on the electron emission side of the n-type Si substrate
A step of sequentially depositing a gate electrode, and
A step of removing the disk.
The anode current does not saturate and the ambient temperature
The anode current starts to be observed without being affected by light or light.
Of obtaining a method of manufacturing an electron-emitting device having a low gate voltage
There is.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an electron-emitting device according to a first embodiment of the present invention.

FIG. 2 is an enlarged cross-sectional view illustrating a porous Si layer according to Example 1.

FIG. 3 is a graph showing a relationship between an emission current and a gate voltage of the electron-emitting device according to the first embodiment.

FIG. 4 is a graph showing a relationship between an emission current and a gate voltage of the electron-emitting device according to the first embodiment.

FIG. 5 is a configuration diagram showing an anodization cell in a method for manufacturing an electron-emitting device according to a second embodiment.

FIG. 6 is a sectional view showing an electron-emitting device according to a third embodiment of the present invention.

FIG. 7 is a sectional view illustrating a method of manufacturing the electron-emitting device according to the third embodiment in the order of steps.

FIG. 8 is a sectional view showing an electron-emitting device according to a fifth embodiment of the present invention.

FIG. 9 is a sectional view illustrating a method of manufacturing an electron-emitting device according to a fifth embodiment in the order of steps.

FIG. 10 is a sectional view illustrating a method of manufacturing an electron-emitting device according to Embodiment 6 of the present invention in the order of steps.

FIG. 11 is a sectional view showing an electron-emitting device according to a sixth embodiment of the present invention.

FIG. 12 is a configuration diagram illustrating a CRT according to a seventh embodiment of the present invention.

FIG. 13 is a sectional view showing a flat panel display according to Embodiment 8 of the present invention.

FIG. 14 is a sectional view showing a conventional electron-emitting device.

FIG. 15 is a cross-sectional view showing a conventional method for manufacturing an electron-emitting device in the order of steps.

[Explanation of symbols]

11 porous Si layer, 12 emitter, 13 n-type Si
Substrate, 14 insulating film, 15 gate electrode, 31 n-type Si substrate on which electron-emitting device is formed, 32 cathode, 33 constant current source, 35 anode, 36 electrolyte, 37 light source, 71
Mask, 73 thermal oxide film.

──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Masafumi Ototake 8-1-1 Tsukaguchi Honcho, Amagasaki City Examiner, Materials and Devices Laboratory, Mitsubishi Electric Corporation Hiroshi Kojima (56) References JP-A-7-335116 ( JP, A) International Publication 94/3916 (WO, A1) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01J 9/02

Claims (2)

(57) [Claims] A mask is formed on an emitter forming portion of an n-type Si substrate.
Forming a mask, and drying the n-type Si substrate on which the mask is formed.
Forming the emitter under the mask by etching
Forming a cone in the area, thermal oxidation
Thermal oxide film on the electron emission side of the n-type Si substrate
Forming the thermal oxide film, the n-type Si group
A process of sequentially depositing an insulating film and a gate electrode on the electron emission side of the plate
The thermal oxidation of the emitter formation portion by etching
The film and the mask are removed, and the protrusion of the emitter formation portion is formed.
Exposing the n-type Si substrate, and the n-type Si substrate
Anodizing while irradiating the exposed portion with light to form porous S
An electron-emitting device, comprising a step of forming an i-layer.
Manufacturing method. 2. Anodizing while irradiating light to an n-type Si substrate
To form a porous Si layer on the n-type Si substrate.
In the process, the porous Si layer formed on the n-type Si substrate is etched.
Step of forming a mask in the mitter forming section, forming the mask
The formed n-type Si substrate is etched and
Forming a cone in the emitter formation portion;
An insulating film on the electron emission side of the n-type Si substrate having
Step of sequentially depositing a gate electrode, and forming the emitter
Removing a portion of the mask.
A method for manufacturing an electron-emitting device.