JP3247283B2 - Charging device and image forming device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact charging device and an image forming apparatus for charging a charging member to which a voltage is applied by bringing the charging member into contact with a charged surface of an image carrier.

[0002]

[Prior art]

1. Image Forming Apparatus As an image forming apparatus, a so-called copying machine for copying an original has been well known.
The demand for printers used for output means such as word processors has been growing remarkably. Since such a printer is used not only for conventional office use but also for personal use, further economics and convenience such as low cost and maintenance free are required.

[0003] Further, from the viewpoint of ecology, two-sided copying, resource saving by reducing paper consumption utilizing recycled paper,
Energy saving by reducing power consumption and improvement of working environment by reducing ozone amount are required with the same importance as economy and convenience.

A corona charger, which has been the mainstream of the conventional charging system, has a metal wire of about 50 to 100 μm and has a diameter of 5 to 10 k.
A high voltage of about V is applied to ionize the atmosphere to apply a charge to the opposing object (charged object). In the process, the wire itself also absorbs dirt, so that periodic cleaning and replacement are required. Unnecessary ozone is generated with the corona discharge.

Regarding energy saving, there is also a problem of a photoconductor heater. In recent years, electrophotographic photoreceptors used in image forming apparatuses have increased surface hardness in order to increase the number of printing presses, and corona generation derived from ozone generated by a charger with repeated use. Due to the influence of the object, the surface of the photoconductor becomes sensitive to humidity, so that moisture is easily absorbed. This moisture causes a lateral flow of charges on the surface of the photoreceptor, causing image quality degradation such as so-called image flow.

In order to prevent such image deletion, heating by a heater as described in Japanese Utility Model Publication No. 1-32055 or a magnet roller as disclosed in Japanese Patent Publication No. 2-38565 is used. A method of removing the corona product by rubbing the surface of the photoreceptor with a brush formed of a magnetic toner, a method of removing the corona product by rubbing the surface of the photoreceptor by an elastic roller as described in JP-A-61-100780, etc. Has been used.

[0007] The method of tracing the surface of the photoreceptor is used for an amorphous silicon photoreceptor having extremely high hardness, but it is difficult to reduce the size and cost of the apparatus. Further, the constant heating by the heater causes an increase in power consumption as described above. The capacity of the heater is usually about 15 to 80 W, which does not always give the impression of a large amount of electric power. However, in most cases, the heater is always energized even at night, and the amount of electric power consumed per day is the entire image forming apparatus. 5-1 of power consumption
Up to 5%.

Further, in an external heater heating system in a form similar to the present invention, that is, in JP-A-59-111179 and JP-A-62-278577, the image density is not affected by the temperature fluctuation of the photosensitive member. There is no disclosure of an improvement in the stability factor.

The above-mentioned ozone, which causes image deletion, is preferably removed. Conventionally, the ozone has been decomposed and made harmless by an ozone removal filter and discharged. Especially in the case of personal use, the amount of emitted ozone must be reduced as much as possible. As described above, a method for greatly reducing the amount of ozone generated at the time of charging is demanded also from the economical point of view.

Under these circumstances, a new charging device and an image forming device that generate no or very little ozone are required. 2. Charging Device Various charging devices have been proposed to solve the above-mentioned problems.

A contact charging device as described in Japanese Patent Application Laid-Open No. 63-208878 is to charge a charged surface to a predetermined potential by bringing a charging member to which a voltage is applied into contact with a charged member. First, the applied voltage required to obtain a predetermined potential on the surface to be charged can be reduced compared to a corona charging device widely used as a charging device. Since there is no or very small amount of ozone generated in the apparatus, the necessity of an ozone removal filter is eliminated, thus simplifying the configuration of the exhaust system of the apparatus, being maintenance-free, and thirdly, in the charging process. The generated ozone and ozone products adhere to the surface of the image carrier, for example, the surface of the photoreceptor, which is the surface to be charged, and the surface of the photoreceptor becomes sensitive to humidity under the influence of the adhered corona product to absorb moisture. It can prevent image deletion due to low resistance and eliminate the necessity of dehumidification by a heater that is performed all day, and can greatly reduce power consumption such as energization at night. , Etc.

Contact charging devices having the above-mentioned advantages include, for example, electrophotographic image forming apparatuses (copiers, laser beam printers), electrostatic recording type image forming apparatuses, electrophotographic photosensitive members, and dielectric materials. As means for charging an image carrier such as the above and other charged objects, attention has been paid to an alternative to the corona discharge device, and it has been put to practical use. 2. Description of the Related Art Conventionally, as a contact charging device, a device in which a fixed charging member in the form of a blade or a sheet is brought into contact with a member to be charged and a bias is applied thereto to perform charging is known.

FIG. 8 shows an embodiment thereof. Reference numeral 801 denotes a drum-shaped photoconductor (hereinafter, appropriately referred to as a “photosensitive drum”), which is a drum-type electrophotograph that is rotated clockwise (in the direction of arrow A) at a predetermined peripheral speed (process speed). It is a photoconductor. Reference numeral 802 denotes a contact charging member, which includes an electrode 802-1 and a resistance layer 802 formed on the charging surface thereof.
-2. The electrode 802-1 is usually made of a metal such as aluminum, aluminum alloy, brass, copper, iron, stainless steel, or an insulating material such as resin, ceramic, etc.
That is, a material coated with a metal or a conductive paint is used. The resistance layer 802-2 is formed of a resin such as polypropylene or polyethylene, silicon rubber,
A material in which conductive fillers such as titanium oxide, carbon powder, and metal powder are dispersed in an elastomer such as urethane rubber is generally used. The resistance value of the resistance layer 802-2 is HIOK
1 × 10 ³ to 1 × 10 ¹² Ω by measuring with an applied voltage of 0.25 to 1 kV using an MΩ tester manufactured by Company I (manufacturer).
・ It has a resistance value of cm. 803 is a voltage source for the charging member 802, the oscillating voltage V having twice or more the peak voltage V _pp of the charge starting voltage by the power supply 803
_ac and dc voltage V _dc and superimposed t superimposed voltage (V _ac +
V _dc ) is applied to the electrode 802-2 of the charging member 802,
The outer peripheral surface of the rotating photosensitive drum 801 is uniformly charged.

Further, an electrostatic latent image is formed on the photosensitive drum 801 by scanning with the laser beam printer light 805 whose intensity is modulated according to the image signal.

The latent image is transferred to a transfer material 807 via a transfer roller 808 after toner is adhered by a developing sleeve 806 coated with a developer and visualized (developed) as a toner image. . The transfer residual toner is removed from the photosensitive drum by the cleaning blade 809. On the other hand, a transfer material 807 having a toner image transferred on the surface thereof
After the toner image is fixed by a fixing device (not shown), the toner image is discharged outside the image forming apparatus main body as a final copy.

However, in the above-described method, the direct contact between the photosensitive drum 801 and the contact charging member 802 and the influence of friction are large. Therefore, the contact charging member 802 is inevitably worn due to long-term use, and requires periodic replacement. In recent years, amorphous silicon photoconductors that have begun to be widely used as image carriers in image forming apparatuses have a semi-permanent life, and replacement of the contact charging member 802 is a problem that hinders maintenance-free operation of the apparatus. Improvement was strongly sought.

As a solution to this problem, Japanese Patent Application Laid-Open No. S59-1335 discloses a method of improving the contact charging member.
As disclosed in Japanese Patent Application Laid-Open No. 69-6969, a new method of a mechanism in which a magnetic brush-shaped contact charging member made of a magnetic material and a magnetic powder (or particles) is brought into contact with an image carrier to apply a charge thereto has been proposed.

FIGS. 9A and 9B show an embodiment thereof. FIG. 9A is a longitudinal sectional view of the photosensitive drum 901 and the charging member 902 in a direction perpendicular to the axis.
(B) shows a front view of the charging member 902. Reference numeral 901 denotes a photosensitive drum as an image carrier, which is a drum-type electrophotographic photosensitive member that is driven to rotate at a predetermined peripheral speed (process speed) in the direction of arrow A. A charging member 902 includes a multipolar magnetic body 902-2 and a magnetic brush layer 902-1 formed of magnetic powder on a charged surface thereof.

The multipolar magnetic body 902-2 is usually formed of a magnetic material such as a ferrite magnet or a rubber magnet, and is formed in a cylindrical, so-called magnet roller.

The magnetic brush layer 902-1 is generally made of magnetic iron oxide (ferrite) powder, magnetite powder, a well-known magnetic toner material, or the like.

It is desirable that the resistance value of the charging member 902 be appropriately selected according to the environment in which the charging member 902 is used, high charging efficiency, the withstand voltage characteristics of the surface layer of the photosensitive drum 901 and the like.

Photosensitive drum 901 and multipolar magnetic body 902-2
Is required to be stably set to a certain distance in order to stably control the contact width (hereinafter referred to as “nip width”) of the magnetic brush layer 902-1. This distance is 50
To 2000 μm, more preferably 10 μm.
0 to 1000 μm.

Reference numeral 903 denotes a power supply for applying a voltage to the charging member 902, and the DC voltage _Vdc is supplied from the power supply 903 to the multipolar magnetic body 902-2 and the magnetic brush layer 90 of the charging member 902.
The photosensitive drum 9 which is applied to 2-1 and is rotationally driven
01 is uniformly charged.

Further, reflected light 905 from a document as an image forming source is irradiated on a photosensitive drum 901 to form an electrostatic latent image. This latent image is visualized as a toner image by a developing sleeve 906 coated with a developer, and then transferred onto a transfer material 807 via a transfer roller 908.
The transfer residual toner is removed from the photosensitive drum 901 by the cleaning blade 909. On the other hand, the transfer material 907 having the toner image transferred to the surface is discharged outside the image forming main body after the toner image is fixed by a fixing device (not shown).

According to such a method, the contact and friction characteristics between the image bearing member (photosensitive drum) 901 and the contact charging member 902 are improved, and the durability and the mechanical wear are greatly improved. Can be. 3. Photoconductor [Organic Photoconductor (OPC)] In recent years, various organic photoconductive materials have been developed as photoconductive materials for electrophotographic photoconductors.
In particular, a function-separated type photoconductor in which a charge generation layer and a charge transport layer are laminated has already been put to practical use and mounted on a copying machine or a laser beam printer.

However, one of the major disadvantages of these photosensitive members is that their durability is generally low. The durability is roughly classified into the durability of electrophotographic properties such as sensitivity, residual potential, charging ability and image blur, and the mechanical durability such as abrasion and scratching of the photoreceptor surface by sliding.
Each of these factors is a major factor in determining the life of the photoconductor.

Among them, the durability of the electrophotographic physical properties, particularly the image blur, is related to the ozone generated from the corona charger,
It is known that the cause is that the charge transport material contained in the photoconductor surface layer is deteriorated by an active material such as NOx.

As for the mechanical durability, a cleaning member such as paper, a blade or a roller,
It is known that the cause is that the toner or the like physically contacts and slides.

In order to improve the durability of the electrophotographic physical properties, it is important to use a charge transporting substance which is hardly deteriorated by an active substance such as ozone or NOx, and it is important to select a charge transporting substance having a high oxidation potential. Are known. Also,
In order to increase mechanical durability, the surface must be lubricated to reduce rubbing with paper and cleaning members, to reduce frictional force, and to prevent toner film fusing. It is important to improve the releasability, and it is known that a lubricant such as a fluororesin powder, fluorinated graphite, or a polyolefin resin powder is blended in the surface layer. However, when the wear is significantly reduced,
The problem that hygroscopic substances generated by active substances such as ozone and NOx accumulate on the photoreceptor surface without being removed, resulting in a decrease in surface resistance and lateral movement of surface charges, resulting in so-called image deletion. was there. [Amorphous silicon-based photoreceptor (a-Si)] In electrophotography, a photoconductive material for forming a photosensitive layer in the photoreceptor has high sensitivity and an SN ratio [photocurrent ( _Ip ) / dark current ( _Id )]. ] Has a high absorption spectrum that matches the spectral characteristics of the radiated electromagnetic wave, has a fast light response, has a desired dark resistance value, and is harmless to the human body during use. Required. In particular, in the case of a photoconductor for an image forming apparatus incorporated in an image forming apparatus used in an office as an office machine, the above-described non-pollution during use is an important point.

Hydrogenated amorphous silicon (hereinafter referred to as "a-Si:
H "), for example, Japanese Patent Publication No. 60-35059.
In Japanese Patent Application Laid-Open Publication No. H11-176, there is described an application as a photoreceptor for an image forming apparatus.

In such a photosensitive member for an image forming apparatus, generally, a conductive support is heated to 50 to 400 ° C., and a vacuum evaporation method, a sputtering method, an ion plating method, CVD method, photo CVD method, plasma CV
A photoconductive layer made of a-Si is formed by a film forming method such as the D method. Among them, a plasma CVD method, that is, a method in which a raw material gas is decomposed by direct current, high frequency, or micro-method glow discharge to form an a-Si deposited film on a support has been put into practical use as a suitable method.

JP-A-54-83746 discloses an image forming apparatus comprising a conductive support and an a-Si (hereinafter referred to as "a-Si: X") photoconductive layer containing a halogen atom as a constituent element. A photoconductor for an apparatus has been proposed. In this publication, a-Si contains 1 to 40 halogen atoms.
It is stated that by containing at%, heat resistance is high, and good electrical and optical characteristics can be obtained as a photoconductive layer of a photoconductor for an image forming apparatus.

Further, Japanese Patent Application Laid-Open No. 57-11556 discloses
a photoconductive member having a photoconductive layer composed of an a-Si deposited film, such as dark resistance value, photosensitivity, photoresponsiveness, and electrical, optical, photoconductive properties and use environment properties such as moisture resistance; Furthermore, in order to improve the stability over time, a surface barrier composed of a non-photoconductive amorphous material containing silicon atoms and carbon atoms is provided on a photoconductive layer composed of an amorphous material composed mainly of silicon atoms. Techniques for providing layers are described. Further, Japanese Patent Application Laid-Open No. 60-67951 describes a technique for a photoconductor in which a light-transmitting insulating overcoat layer containing amorphous silicon, carbon, oxygen and fluorine is laminated. 1
Japanese Patent No. 68161 describes a technique in which an amorphous material containing silicon atoms, carbon atoms, and 41 to 70 atomic% of hydrogen atoms as constituent elements is used as a surface layer.

Furthermore, in JP-A-51-158650, hydrogen containing 10 to 40 atomic%, 0.2 absorption coefficient ratio of the absorption peak of 2100 cm ^-1 and 2000 cm ^-1 in the infrared absorption spectrum It is described that a photosensitive member for an image forming apparatus having high sensitivity and high resistance can be obtained by using a-Si: H of 1.7 for the photoconductive layer.

On the other hand, Japanese Patent Application Laid-Open No. 60-95551 discloses that in order to improve the image quality of an amorphous silicon photoconductor, the temperature near the surface of the photoconductor is maintained at 30 to 40.degree. By performing such an image forming process, there is disclosed a technique for preventing a reduction in surface resistance due to the adsorption of moisture on the surface of a photoreceptor and an image deletion caused thereby.

These techniques have improved the electrical, optical, photoconductive and operating environment characteristics of the photoreceptor for an image forming apparatus, and accordingly the image quality. 4. Environmentally friendly heater To prevent and remove the high humidity image flow of the photoconductor,
It is well known to provide a heat source on the inner surface of the photoreceptor, and most commonly, a planar or rod-shaped electric heater is disposed on the inner surface of the photoreceptor.

[0037]

Problems to be solved when a charging device using magnetic particles of the voltage application type as a brush as described above is used as a charging means for a photoreceptor are as follows.

In particular, when the rotation speed of the photosensitive member is high and the potential difference between the charged potential and the non-charged portion is large, the durability of the charging member is poor. The carrier of the magnetic powder or the like (hereinafter referred to as “charge carrier”) constituting the magnetic brush layer 902-1 in FIG. 9A moves to the surface of the photoconductor during rotation of the photoconductor in a charging process or the like, and the charging efficiency is reduced. Therefore, a density difference is observed on the image in the rotation direction of the photoconductor. In particular, in an image forming apparatus using a photoreceptor having a very long life, such as an amorphous silicon photoreceptor, which is used at a high speed, the image quality is degraded due to the decrease in the number of carriers in the charger, and it is necessary to recover the image by using a maintenance method. Alternatively, the charging member needs to be replaced. This is a problem that increases service costs and hinders maintenance-free operation.

Further, there is a vertical streak (hereinafter referred to as "mottle streak") at the time of durability. The following can be considered as a mottled streak generation mechanism.

In response to the magnetic attraction between the magnetic material and the charged carrier, there is a mechanical force such as friction due to the rotation of the photoreceptor, and the electric force due to the electric field generated by the potential difference between the magnetic brush layer and the non-charged portion of the photoreceptor surface. The charged carrier moves to the photoreceptor due to a suction force or the like, and some of the charged carrier is magnetically attracted to a sleeve (developing sleeve) of the developing device. Then, as the number of printings increases, the number of charge carriers attracted to the developing sleeve increases, which hinders the developer from being developed on the photoreceptor surface, and as a result, mottle lines occur. The occurrence of this mottled streak is a problem.

JP-A-59-133569 discloses a mechanism in which a blade is provided downstream of a charger in the direction of rotation of a photoreceptor to re-capture the above-mentioned charged carrier. However, there is a problem that cost reduction is hindered or maintenance-free is hindered as described above.

Accordingly, an object of the present invention is to provide a contact charging device and an image forming apparatus which solve the above-mentioned problems.

[0043]

Means for Solving the Problems The present invention according to claim 1
Is a charging device that contacts a surface to be charged of a member to be charged with a cylindrical charging member and charges the surface to be charged by applying a voltage to the charging member. A cylindrical rotatable multipolar magnetic body having magnetic poles; a spacer for regulating a gap between the surface of the multipolar magnetic body and the surface to be charged; Magnetic powder constituting a band-like nip between the surface to be charged and the surface to be charged, and the distance between the magnetic poles adjacent in the circumferential direction on the surface of the multipolar magnetic body, Set smaller than the circumferential width of the nip
The uncharged area of the charged surface passes through the nip.
When the voltage applied to the charging member is turned off,
Preferably, the multipole magnetic body is rotated .

The present invention according to claim 2 provides the present invention according to claim 1.
In the charging device, when the surface to be charged is charged through the multipolar magnetic body and the magnetic powder, the multipolar magnetic body is connected to any one magnetic pole of the multipolar magnetic body and the surface to be charged. Is stopped at a position where the gap with the minimum is minimized .

[0045]

The present invention according to claim 3 is based on claim 1 or
3. The charging device according to claim 2, wherein the member to be charged includes a conductive support, a hydrogen atom and / or a silicon atom as a base.
A photoconductive layer containing a non-single-crystal material containing a halogen atom, and a photoreceptive layer having a surface layer having a function of retaining electric charge, wherein the photoconductive layer has a content of 10 to 30 atomic%.
A hydrogen atom and / or a halogen atom, the characteristic energy of the exponential function tail obtained from the sub-bandgap light absorption spectrum is at least 50 meV and at most 60 meV in at least the portion where light is incident, and the localized state density is 1 × 10 ^{14 to} 5 × 10 ¹⁶ cm ⁻³ , and the electric resistance value of the surface layer is 1 × 10 ^{10 to} 5 × 10 ¹⁵ Ω.
・ Cm.

The present invention according to claim 4 is the invention according to claim 1 or
3. The charging device according to claim 2, wherein the member to be charged is an organic photoconductive member.
Comprising an electric body and a surface layer containing the charge retaining particles.
It is characterized by. Further, the present invention according to claim 5 provides the present invention
3. The charging device according to claim 3, wherein the object to be charged has a temperature of 1 ° C.
The change of the charging potential per unit is within 2 V / deg.
And features.

According to a sixth aspect of the present invention, there is provided an image forming apparatus, wherein the charging device according to any one of the first to fifth aspects , a member to be charged by the charging device, and a member charged by the charging device. Latent image forming means for exposing the surface of the charged object to form an electrostatic latent image, developing means for adhering toner to the electrostatic latent image to form a toner image on the charged object, and the toner image And a transfer means for transferring the image to a transfer material.

[Operation] Based on the above configuration, by setting the distance between circumferentially adjacent magnetic poles on the surface of the multipolar magnetic body to be smaller than the nip width, at least one magnetic pole is formed in the nip. As a result, the force for attracting the magnetic powder toward the multipolar magnetic body in the nip is increased, whereby the magnetic powder is covered by the electric field acting between the charging member and the member to be charged. It prevents movement to the charged body side.

When the magnetic pole in the nip is stopped at the position where the gap between the nip and the surface to be charged is minimized during charging, the force for attracting the magnetic powder toward the multipolar magnetic body is further increased. In addition, the movement of the magnetic powder can be more effectively prevented.

When the applied voltage is cut off, for example, blank exposure in an analog copying machine can be omitted in accordance with the charging unnecessary area of the member to be charged, and when the multipolar electrode is rotated, the multipolar magnetic material is used. The magnetic powder on the surface can be leveled in the longitudinal direction of the nip (the direction of the generatrix on the surface of the multipolar magnetic body).

Further, since no ozone product is generated unlike corona charging, a so-called "high humidity flow" countermeasure becomes unnecessary, and nighttime electricity consumption and power consumption are reduced with the removal of the drum heater and the like, and from an ecological point of view. It is valid.

[0053]

Embodiments of the present invention will be described below with reference to the drawings. Embodiment 1 [Charging Member] FIGS. 1A and 1B schematically show a charging member and a member to be charged according to the present invention as viewed from the front and side surfaces, respectively. In these figures, 100 is a contact charging member, 101 is a magnetic brush layer made of a charge carrier in the contact charging member, 102 is a multipolar magnetic body of the contact charging member,
Reference numeral 103 denotes a spacer that regulates a gap between the contact charging member and the photoconductor, and reference numeral 104 denotes a member to be charged (image carrier) such as a photoconductor.

As the multipolar magnetic material 102 of the contact charging member, a metal such as a ferrite magnet or a magnetic material such as a plastic magnet, which can have a multipolar structure, is usually used. The magnetic line density varies depending on many factors such as the process speed to be used, the electric field due to the potential difference between the applied voltage and the non-charged portion, the permittivity and surface properties of the member to be charged, and the distance of 1 mm from the surface of the multipolar magnetic body 102. Is preferably 500 gauss (G) or more in magnetic line density at the magnetic pole position. More preferably, it is 1000 G or more.

In order to stably control the contact width of the magnetic brush layer 102 (hereinafter referred to as “nip width”), the nearest gap between the photoconductor and the multipolar magnetic body 102 is determined by an appropriate method such as a roller or a spacer 103. It must be set stably at a certain distance. This distance is preferably in the range of 50 to 200 μm, more preferably 100 to 1000 μm. In addition, a mechanism such as a blade may be provided for nip adjustment.

The magnetic brush layer 101 of the contact charging member 100
Generally, magnetic powders such as phyllite and magnetite and carriers of known magnetic toners can be used.
In general, a magnetic powder having a particle size of 1 to 100 μm is used. Preferably it is 50 μm or less. Further, charge carriers having different particle diameters within the above-mentioned range may be mixed and used for improving the fluidity.

The resistance of the magnetic brush layer 101 keeps the charging efficiency good, while preventing the potential from dropping in the major axis direction of the charging member due to leak spots and minute defects on the surface of the photosensitive member. , 1 × 10 ³ to 1 × 10 ¹² Ω
It is preferable to have a resistance of cm. More preferably 1
× 10 ⁴ to 1 × 10 ⁹ Ω · cm. The measurement of the resistance value
0.25 with MHI tester manufactured by HIOKI (manufacturer)
The measurement was performed at an applied voltage of 1 kV.

The member to be charged 104 may be the same as the conventional one, but a new photosensitive member to be described later may be used if necessary.

In the present invention, the magnetic brush layer 1 as described above is used.
01, the direction of the magnetic pole of the magnetic body 102 of the contact charging member 100 is stopped so as to be closest to the charged body 104 during the application of the voltage, so that the charged carrier in the portion where the magnetic field line density between the magnets is small is covered. The charge carrier 104 is prevented from moving toward the member to be charged 104 due to electrostatic attraction, frictional force, or the like, thereby preventing the charge carrier from decreasing.

Further, as shown by an arrow in FIG. 1B, for example, by rotating the charging member 100, the chance that the charge carrier is captured on the member 104 between the magnetic poles does not increase. I have to.

Further, during image formation, the voltage applied to the charging member 100 is cut off between the transfer material and the succeeding transfer material (a non-charging area on the member to be charged, hereinafter referred to as a "paper interval"). This eliminates the potential difference between the charged member 104 such as a photoreceptor and the charging member 100 and prevents the charge carrier from decreasing, and rotating the charging member 100 reduces unevenness of the charge carrier in the major axis direction of the charging member. Level. [Photoconductor] As one means for solving the above-mentioned problem, the present applicant has used a photoconductor having low temperature dependency and excellent surface durability to achieve extremely suitable image stabilization over a long period of time. I found something to be done. [Organic Photoconductor (OPC)] An OPC photoconductor, which is one form of a preferable photoconductor used in the present invention, will be described below.
FIG. 11 is a schematic configuration diagram for explaining the layer configuration of the photoconductor for an image forming apparatus of the present invention.

The OPC for the image forming apparatus shown in FIG.
In the photoconductor 1100, a photoconductive layer (photoconductive layer) 1102 is provided on a support 1101 for the photoconductor.
The photosensitive layer 1102 includes the charge generation layer 1106 and the charge transport layer 11
07, and if necessary, a protective layer or a surface layer 11
04, and an intermediate layer provided between the support 1101 and the charge generation layer 1106.

The OPC photosensitive member used in the present invention, that is, a surface layer, a photoconductive layer, an intermediate layer provided as necessary,
In particular, it is necessary that the surface layer efficiently receive the charge injection from the contact charging member and hold this charge effectively. Applicants disperse charge retaining particles such as metal oxides such as SnO _{2 in} a material having a high melting point in which a polyester resin and a cured resin are mixed, particularly in a surface layer, in a mixed material of a high melting point polyester resin and a cured resin. It has been found that the materials used make the properties of the respective resin components act synergistically to satisfy these conditions.

The resin components used for forming the surface layer, photoconductive layer, charge transport layer and charge generation layer of the electrophotographic photosensitive member of the present invention will be described.

The polyester is a binding polymer of an acid component and an alcohol component, and is a polymer obtained by condensation of a dicarboxylic acid and a glycol or condensation of a compound having a hydroxy group and a carboxy group of hydroxybenzoic acid.

As the acid component, aromatic dicarboxylic acids such as terephthalic acid, isophthalic acid and naphthalenedicarboxylic acid;
Aliphatic dicarboxylic acids such as succinic acid, adipic acid and sebacic acid, alicyclic dicarboxylic acids such as hexahydroterephthalic acid, and oxycarboxylic acids such as hydroxyethoxybenzoic acid can be used.

As the glycol component, ethylene glycol, trimethylene glycol, tetramethylene glycol, hexamethylene glycol, cyclohexane dimethylol, polyethylene glycol, polypropylene glycol and the like can be used.

Incidentally, polyfunctional compounds such as pentaerythritol, lorimethylolpropane, pyromellitic acid and ester-forming derivatives thereof may be copolymerized within a range where the above-mentioned polyester resin is substantially linear.

As the polyester resin used in the present invention, a high melting point polyester resin is used.

The high melting polyester resin has an intrinsic viscosity of 0.4 in orthochlorophenol at 36 ° C.
dl / g or more, preferably 0.5 dl / g or more, more preferably 0.65 dl / g or more is used.

Preferred high melting point polyester resins include polyalkylene terephthalate resins. The polyalkylene terephthalate resin mainly comprises terephthalic acid as an acid component and alkylene glycol as a glycol component.

Specific examples thereof include polyethylene terephthalate (PET) mainly composed of a terephthalic acid component and an ethylene glycol component, and polyethylene terephthalate (PET) mainly composed of a terephthalic acid component and a 1,4-tetramethylene glycol (1,4-butylene glycol) component. Polybutylene terephthalate (PBT), polycyclohexyl dimethylene terephthalate (PCT) mainly composed of a terephthalic acid component and a cyclohexane dimethylol component, and the like. As another preferable high molecular weight polyester resin, a polyalkylene naphthalate resin can be exemplified. The polyalkylene naphthalate resin is mainly composed of a naphthalenedicarboxylic acid component as an acid component and an alkylene glycol component as a glycol component. Specific examples thereof include polyethylene naphthalenedicarboxylic acid components and an ethylene glycol component. Phthalate (PEN) and the like can be mentioned.

The high melting point polyester resin has a melting point of preferably 160 ° C. or more, particularly preferably 200 ° C.
That's all.

In addition to the polyester resin, an acrylic resin may be used.

As the binder, bifunctional acrylic,
Hexafunctional acryl, phosphazene and the like are used.

It is considered that these resins have relatively high crystallinity, and the entanglement between the cured resin polymer chain and the high melting point polymer chain is uniform and dense, so that a highly durable surface layer can be formed. . In the case of a low melting point polyester resin or the like, since the crystallinity is low, there are portions where the degree of entanglement with the cured resin polymer chain is large and small, and the durability is considered to be poor.

For the surface layer, a material in which a charge holding material such as SnO ₂ was dispersed was used. It is preferable to control the resistance value and the charging efficiency by using a dispersion amount appropriately selected according to use conditions and the like. [Amorphous silicon photoconductor (a-Si)] An amorphous silicon photoconductor, which is one form of a preferable photoconductor used in the present invention, will be described below.

Focusing on the behavior of the carrier in the photoconductive layer of the amorphous silicon photoreceptor, the present inventors have conducted intensive studies on the relationship between the distribution of the localized state in the band gap, the temperature dependency of the charging ability, and the optical memory. It has been found that the above object can be achieved by controlling the local density of states in a specific energy range at least in a part where light is incident. That is, a silicon atom is used as a base, and a hydrogen atom and / or (hereinafter, “and / or”
Is used to mean "both or either") a photoreceptor having a photoconductive layer composed of a non-single-crystal material containing a halogen atom, which is designed and made to specify the layer structure. The photoreceptor has not only excellent properties in practical use, but also surpasses in all respects compared to conventional photoreceptors, and has particularly excellent properties as photoreceptors for image forming apparatuses. I found that.

The photoreceptor for an image forming apparatus of the present invention comprises a conductive support and a photosensitive layer having a photoconductive layer made of a non-single-crystal material having silicon atoms as a base. It contains 30 atomic% of hydrogen and has a characteristic energy of 50 at the exponential tail (Urbuck tail) of the light absorption spectrum.
Not less than 60 meV and the density of localized states is 1 ×
It is not less than 10 ¹⁴ cm ^{-3 and not} more than 1 × 10 ¹⁶ cm ^-3 .

The photoreceptor for an image forming apparatus of the present invention designed to have the above-described configuration can solve all of the above-mentioned problems, and has excellent electrical, optical and photoconductive properties. It shows characteristics, image quality, durability, and usage environment characteristics.

Generally, in the band gap of a-Si: H, the tail (tail) level based on the structural disorder of the Si-Si bond and the unbonded means (dangling bond) of Si, etc. There are deep levels due to structural defects. These levels act as electron and hole traps and recombination centers,
It is known that this may cause the characteristics of the element to deteriorate.

As a method of measuring the state of the localized level in the band gap, generally, deep level spectroscopy, isothermal capacity transient spectroscopy, photothermal deflection spectroscopy, constant photocurrent method and the like are used. . Above all, constant photocurrent method [Constant
PhotocurrentMethod: "CP
M ”] is useful as a method for easily measuring a subgap light absorption spectrum based on the localized level of a-Si: H.

Applicants have determined the characteristic energy (hereinafter, referred to as “Eu”) of the exponential tail obtained from the optical absorption spectrum measured by the CPM and the localized state density (hereinafter, referred to as “Eu”).
As a result of examining the correlation between "DOS") and the characteristics of the photoreceptor under various conditions, it was found that Eu and DOS have a close relationship with the temperature characteristics of the a-Si photoreceptor and the optical memory, thereby completing the present invention. Reached.

The reason why the charging ability is reduced when the photosensitive member is heated by a drum heater or the like is that a thermally excited carrier (hereinafter referred to as a "thermally excited carrier") is attracted by an electric field at the time of charging and a localization of a band tail is caused. It travels on the surface while repeatedly capturing and emitting levels and deep localized levels in the band gap,
It is possible to cancel the surface charge. At this time, the thermal excitation carriers that reach the surface while passing through the charger have almost no effect on the reduction in charging ability,
The thermally excited carriers captured at the deep level reach the surface after passing through the charger, and are observed as a temperature characteristic because the surface charge is canceled. In addition, thermally excited carriers that are thermally excited after passing through the charger also cancel the surface charge and cause a reduction in charging ability. Therefore, it is necessary to suppress the generation of the thermally excited carrier in the operating temperature range of the photosensitive member and to improve the phototacticity of the thermally excited carrier in order to improve the temperature characteristics.

Further, the optical memory is generated when optical carriers generated by blank exposure or image exposure are captured by localized levels in the band gap, and the optical carriers remain in the photoconductive layer. That is, of the photocarriers generated in a certain copying process, the photocarriers remaining in the photoconductive layer are swept out by the electric field due to the surface charge at the next charging or thereafter, and the potential of the light-irradiated portion becomes another. , Which results in shading on the image. Therefore, it is necessary to improve the traveling property of the optical carrier so that the optical carrier travels in one copying process without remaining in the photoconductive layer.

Therefore, by controlling Eu and DOS in a specific energy range as in the present invention, the generation of thermally excited carriers is suppressed, and the rate at which the thermally excited carriers and optical carriers are captured in the localized levels is reduced. Since the size can be reduced, the traveling performance of the above-described carrier (hereinafter, referred to as “charge carrier”) is significantly improved. as a result,
The temperature characteristics of the photoconductor in the operating temperature range are dramatically improved, and at the same time, the occurrence of optical memory can be suppressed, so that the stability of the photoconductor in the usage environment is improved, and the halftone is clearly expressed, In addition, a high-quality image with high resolution can be stably obtained.

Hereinafter, the photoconductive member of the present invention will be described in detail with reference to the drawings.

FIG. 11 is a schematic configuration diagram for explaining the layer configuration of the photoreceptor for an image forming apparatus of the present invention.

The photoreceptor 1100 for an image forming apparatus shown in FIG. 11A is placed on a support 1101 for a photoreceptor.
A photosensitive layer 1102 is provided. The photosensitive layer 1102 is a
—Si: H, X photoconductive layer 11 having photoconductivity
03.

FIG. 11B is a schematic configuration diagram for explaining another layer configuration of the photosensitive member for an image forming apparatus of the present invention. In the photoconductor 1100 for an image forming apparatus shown in FIG. 1, a photoconductive layer 1102 is provided on a support 1101 for the photoconductor. The photosensitive layer 1102 is made of a-Si: H, X
It is composed of a photoconductive layer 1103 made of and having photoconductivity, and an amorphous silicon-based surface layer 1104.

FIG. 11 (c) is a schematic configuration diagram for explaining another layer configuration of the photoreceptor for an image forming apparatus of the present invention. In the photoconductor 1100 for an image forming apparatus shown in FIG. 1, a photoconductive layer 1102 is provided on a support 1101 for the photoconductor. The photosensitive layer 1102 includes a photoconductive layer 1103 made of a-Si: H, X and having photoconductivity, an amorphous silicon-based surface layer 1104, and an amorphous silicon-based charge injection blocking layer 1105.

FIG. 11D is a schematic configuration diagram for explaining still another layer configuration of the photosensitive member for an image forming apparatus of the present invention. Photoconductor 1100 for image forming apparatus shown in FIG.
Is a photosensitive layer 1 on a support 1101 for a photosensitive member.
102 are provided. The photosensitive layer 1102 is the photoconductive layer 1
The semiconductor device 103 includes a charge generation layer 1106 and a charge transport layer 1107 made of a-Si: H and X, and an amorphous silicon-based S surface layer 1104. [Support] The support used in the present invention includes:
It may be conductive or electrically insulating. As the conductive support, Al, Cr, Mo, Au, In, Nb, T
Examples include metals such as e, V, Ti, Pt, Pd, and Fe, and alloys thereof, such as stainless steel. Further, a film or sheet of a synthetic resin such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polystyrene, polyamide, etc., at least the surface on the side on which the photosensitive layer is formed of an electrically insulating support such as glass, ceramic, etc. A support subjected to a conductive treatment can also be used.

Support 1101 used in the present invention
May be a cylindrical or plate-like endless belt having a smooth surface or an uneven surface, and the thickness thereof is appropriately determined so as to form a desired photoreceptor 1100 for an image forming apparatus. When the flexibility of the photoconductor 1100 for the forming apparatus is required, the thickness can be reduced as much as possible within a range where the function as the support 1101 can be sufficiently exhibited. However, the thickness of the support 1101 is usually 10 μm or more in terms of production, handling, mechanical strength and the like.

In particular, when performing image recording using coherent light such as laser light, the number of charged carriers must be reduced in order to more effectively eliminate image defects caused by so-called interference fringe patterns appearing in a visible image. Irregularities may be provided on the surface of the support 1101 within a substantially non-existent range. Support 110
The unevenness provided on the surface of No. 1 is disclosed in JP-A-60-16815.
No. 6, No. 60-178457, No. 60-22
It is prepared by a known method described in Japanese Patent No. 5854.

As another method for more effectively eliminating image defects due to interference fringe patterns when coherent light such as laser light is used, the support 1101 may be supported in a range where the charge carriers are not substantially reduced. The surface may be provided with an uneven shape by a plurality of spherical trace depressions. That is, the surface of the support 1101 has irregularities smaller than the resolution required for the photoconductor 1100 for an image forming apparatus, and the irregularities are caused by a plurality of spherical trace depressions. The unevenness due to the plurality of spherical trace depressions provided on the surface of the support 1101 is created by a known method described in JP-A-61-231561.

Further, as still another method for more effectively eliminating image defects due to interference fringe patterns when using coherent light such as laser light, light is applied to the inside of the photosensitive layer 1102 or below the photosensitive layer 1102. A layer or region for preventing interference such as an absorption layer may be provided. [Photoconductive layer] In the present invention, in order to effectively achieve the object, a photoconductive layer is formed on the support 1101 and, if necessary, on the undercoat layer (not shown) to constitute a part of the photosensitive layer 1102. The conductive layer 1103 is formed by a vacuum deposition film forming method.
Numerical conditions of film forming parameters are appropriately set so as to obtain desired characteristics. Specifically, for example, a glow discharge method (an AC discharge CVD method such as a low-frequency CVD method, a high-frequency CVD method, a microwave CVD method, or a DC discharge CVD method), a sputtering method, a vacuum deposition method, an ion plating method, It can be formed by various thin film deposition methods such as a photo CVD method and a thermal CVD method. These thin film deposition methods are based on manufacturing conditions, load on capital investment,
It is appropriately selected and adopted depending on factors such as a manufacturing scale and a desired characteristic of a photoconductor for an image forming apparatus to be produced.
The glow discharge method, particularly the high frequency glow discharge method using a power supply frequency in the RF band or the VHF band, is relatively easy to control the conditions for manufacturing the photosensitive member for an image forming apparatus having desired characteristics. It is suitable.

In order to form the photoconductive layer 1103 by the glow discharge method, basically, a source gas for supplying Si that can supply silicon atoms (Si) and a source gas for supplying H that can supply hydrogen atoms (H) are used. And / or a source gas for X supply capable of supplying a halogen atom (X) is introduced in a desired gas state into a reaction vessel capable of reducing the pressure therein, thereby causing glow discharge in the reaction vessel. A-S on a predetermined support 1101 which is set in a predetermined position in advance.
i: A layer composed of H and X may be formed.

In the present invention, it is necessary that the photoconductive layer 1103 contains a hydrogen atom and / or a halogen atom, which compensates for dangling bonds of silicon atoms and improves the quality of the layer. This is because it is indispensable to improve photoconductivity and charge retention characteristics. Therefore, the content of the hydrogen atom or the halogen atom, or the sum of the hydrogen atom and the halogen atom is preferably 10 to 30 atom%, more preferably 15 to 25 atom%, based on the sum of the silicon atom and the hydrogen atom and / or the halogen atom. And it is desirable.

The substances that can be used as the Si supply gas used in the present invention include SiH ₄ , Si ₂ H ₆ , Si ₃
Silicon hydrides (silanes) in a gas state such as H ₈ , Si ₄ H ₁₀ or the like, which can be gasified, are effectively used, and further, ease of handling at the time of forming a layer, good Si supply efficiency, etc. In view of the above, SiH ₄ and Si ₂ H ₆ are preferred.

Then, hydrogen atoms are structurally introduced into the formed photoconductive layer 1103 so that the introduction ratio of hydrogen atoms can be more easily controlled, and a film characteristic that achieves the object of the present invention can be obtained. Therefore, it is necessary to form a layer by mixing a desired amount of a gas of a silicon compound containing H ₂ and / or He or a hydrogen atom with these gases. Further, each gas is not limited to a single species, and a plurality of species may be mixed at a predetermined mixture ratio.

The source gas for supplying a halogen atom used in the present invention may be, for example, a gas or a gas such as a halogen gas, a halide, an interhalogen compound containing a halogen, or a silane derivative substituted with a halogen. Preferred are halogen compounds which can be converted to a halogenated compound. Further, a gaseous or gasizable hydrogen silicon compound containing a silicon atom and a halogen atom and containing a halogen atom can also be mentioned as an effective compound. Specific examples of the halogen compound that can be preferably used in the present invention include fluorine gas (F ₂ ), Br
f, ClF, ClF ₃ , BrF ₃ , BrF ₅ , IF ₃ ,
And a halogen compound between IF ₇ or the like. As a silicon compound containing a halogen atom, that is, a silane derivative substituted with a so-called halogen atom, specifically, for example, silicon fluoride such as SiF ₄ or Si ₂ F ₆ can be preferably mentioned.

To control the amount of hydrogen atoms and / or halogen atoms contained in the photoconductive layer 1103, for example, the temperature of the support 1101, the raw material used for containing hydrogen atoms and / or halogen atoms What is necessary is just to control the amount of the substance introduced into the reaction vessel, the discharge power and the like.

In the present invention, it is preferable that the photoconductive layer 1103 contains atoms for controlling conductivity as necessary. The atoms that control the conductivity are the photoconductive layer 1103.
It may be contained in a uniformly distributed state therein, or there may be a part contained in a non-uniform distribution state in the layer thickness direction.

Examples of the above-described atoms for controlling conductivity include so-called impurities in the field of semiconductors. An atom belonging to Group IIIb of the Periodic Table that provides p-type conductivity (hereinafter referred to as an “atom of Group IIIb”) ) Or an atom belonging to the Vb group of the periodic table that provides n-type conduction characteristics (hereinafter referred to as “Vb group atom”).

Examples of group IIIb atoms include boron (B), aluminum (Al), gallium (Ga),
There are indium (In), thallium (Tl) and the like, and B, Al and Ga are particularly preferable. Group Vb atoms include:
Specifically, phosphorus (P), arsenic (As), antimony (S
b), bismuth (Bi) and the like, and P and As are particularly preferable.

The content of atoms for controlling the conductivity contained in the photoconductive layer 1103 is preferably from 1 × 10 ^-2 to
1 × 10 ⁴ atomic ppm, more preferably 5 × 10 ^-2 to
5 × 10 ³ atomic ppm, optimally 1 × 10 ^-1 to 1 × 10
Desirably, it is set to ³ atomic ppm.

Atoms controlling conductivity, for example, III
In order to structurally introduce a group b atom or a group Vb atom, a source material for introducing a group IIIb atom or a source material for introducing a group Vb atom in a gaseous state in a reaction vessel during layer formation. Then, it may be introduced together with another gas for forming the photoconductive layer 1103. As a source material for introducing a Group IIIb atom or a source material for introducing a Group Vb atom, a material which is gaseous at ordinary temperature and normal pressure or which can be easily gasified at least under layer forming conditions is employed. Is desirable.

As a raw material for introducing a group IIIb atom, specifically, for introducing a boron atom, B ₂ H
_{6, B 4 H 10, B} 5 H 9, B 5 H 11, B 6 H 10, B 6 H
_12, B ₆ H ₁₄ borohydride such as, BF _3, BCl _3, BB
and boron halide such as r ₃ . In addition, Al
Cl ₃ , GaCl ₃ , Ga (CH ₃ ) ₃ , InCl ₃ ,
TlCl _{3 and the} like can also be mentioned.

[0109] being effectively used as a raw material for the Vb atoms introduced as the for introducing phosphorus atoms, PH _3, P
Phosphorus hydride such as ₂ H ₄ , PH ₄ I, PF ₃ , PF ₅ , P
Phosphorus halides such as Cl ₃ , PCl ₅ , PBr ₃ , PBr ₅ , and PI ₃ are mentioned. In addition, AsH ₃ , AsF
₃ , AsCl ₃ , AsBr ₃ , AsF ₅ , SbH ₃ , S
bF ₃ , SbF ₅ , SbCl ₃ , SbCl ₅ , BiH
₃ , BiCl ₃ , BiBr _{3 and the} like can be cited as effective starting materials for introducing a Group Vb atom.

Further, these raw materials for introducing atoms for controlling conductivity may be diluted with H ₂ and / or He if necessary.

In the present invention, the photoconductive layer 110
It is also effective that 3 contains a carbon atom and / or an oxygen atom and / or a nitrogen atom. The content of carbon atoms and / or oxygen atoms and / or nitrogen atoms is preferably 1 × 10 ⁻⁵ to 10 atom%, more preferably 1 × 10 ⁵ atomic%, based on the sum of silicon atoms, carbon atoms, oxygen atoms and nitrogen atoms. ^-4 to 8 atomic%, optimally 1 × 10 ^{-3 to} 5 atomic% is desirable. The carbon atoms and / or oxygen atoms and / or nitrogen atoms may be uniformly contained in the photoconductive layer, or may have an uneven distribution such that the content changes in the thickness direction of the photoconductive layer. May be provided.

In the present invention, the thickness of the photoconductive layer 1103 is appropriately determined as desired from the viewpoint of obtaining desired electrophotographic characteristics and economic effects, and is preferably 20.
It is desirable that the thickness be 50 μm, more preferably 23 μm to 45 μm, and most preferably 25 μm to 40 μm.

In order to achieve the object of the present invention and to form the photoconductive layer 1103 having desired film properties, the mixing ratio of the gas for supplying Si and the diluent gas, the gas pressure in the reaction vessel, the discharge power, It is necessary to appropriately set the temperature of the support.

[0114] The flow rate of H ₂ and / or He used as a dilution gas is properly selected within an optimum range in accordance with the layer design, the relative Si supplying gas H ₂ and / or He, usually 3 20 times, preferably 4 to 15
It is desirable to control the pressure within the range of 5 times, optimally 5 to 10 times.

Similarly, the optimum range of the gas pressure in the reaction vessel is appropriately selected according to the layer design.
0 ^{-4 to} 10 Torr, preferably 5 × 10 ^{-4 to} 10 To
rr, and most preferably, 1 × 10 ^{−3 to} 1 Torr.

Similarly, the optimum range of the discharge power is appropriately selected according to the layer design. The discharge power with respect to the flow rate of the gas for supplying Si is usually 2 to 7 times, preferably 2.5 to 6 times. Optimally, it is desirable to set the range to 3 to 5 times.

Further, the temperature of the support 1101 is appropriately selected in an optimum range according to the layer design, but is usually preferably 200 to 350 ° C., more preferably 23 ° C.
Desirably, the temperature is 0 to 330 ° C, most preferably 250 to 310 ° C.

In the present invention, the preferable ranges of the temperature and gas pressure of the support for forming the photoconductive layer include the above-mentioned ranges. However, the conditions are not usually determined separately and independently. It is desirable to determine the optimum value based on mutual and organic relationships to form a photoreceptor having desired properties. [Surface Layer] In the present invention, it is preferable to further form an amorphous silicon-based surface layer 1104 on the photoconductive layer 1103 formed on the support 1101 as described above. This surface layer 1104 is a free surface 1104
a (see FIG. 11 (b)), which is provided in order to achieve the object of the present invention mainly in terms of moisture resistance, continuous and repeated use characteristics, electrical pressure resistance, use environment characteristics, and durability.

In the present invention, the photosensitive layer 1102
Since each of the amorphous materials forming the photoconductive layer 1103 and the surface layer 1104 has a common component of silicon atoms, chemical stability is sufficiently ensured at the lamination interface. ing.

The surface layer 1104 can be made of any material as long as it is an amorphous silicon material. For example, a hydrogen atom (H) and / or a halogen atom (X) can be used.
And amorphous silicon containing carbon atoms (hereinafter referred to as “a-SiC: H, X”), hydrogen atoms (H) and / or halogen atoms (X), and further containing oxygen atoms. Amorphous silicon containing silicon (hereinafter referred to as “a-SiO: H, X”), a hydrogen atom (H) and / or a halogen atom (X), and further containing a nitrogen atom (hereinafter “a-Si:
N: H, X "), amorphous silicon containing a hydrogen atom (H) and / or a halogen atom (X) and further containing at least one of a carbon atom, an oxygen atom and a nitrogen atom (hereinafter referred to as" a-SiCON "). : H, X ”).

In the present invention, in order to effectively achieve the object, the surface layer 1104 is formed by a vacuum deposition film forming method by appropriately setting numerical conditions of film forming parameters so as to obtain desired characteristics. . Specifically, for example, a glow discharge method (an AC discharge CVD method such as a low-frequency CVD method, a high-frequency CVD method or a microwave CVD method, or a DC discharge CVD method), a sputtering method, a vacuum deposition method,
It can be formed by various thin film deposition methods such as an ion plating method, a photo CVD method, and a thermal CVD method. These thin film deposition methods are appropriately selected and adopted depending on factors such as manufacturing conditions, the degree of load under capital investment, the manufacturing scale, and the characteristics desired for the photoconductor for an image forming apparatus to be manufactured. It is preferable to use the same deposition method as that for the photoconductive layer from the viewpoint of productivity.

For example, a-Si
In order to form the surface layer 1104 composed of C: H and X, a source gas for supplying Si that can supply silicon atoms (Si) and a C for supplying C that can supply carbon atoms (C) are basically used. A raw material gas and a raw material gas for supplying H that can supply hydrogen atoms (H) and / or a raw material gas for X supply that can supply halogen atoms (X) are placed in a reaction vessel capable of reducing the pressure inside a reaction vessel. Introduced in a gaseous state, a glow discharge is generated in the reaction vessel, and a-Si is formed on a support 1101 on which a photoconductive layer 1103 previously placed at a predetermined position is formed.
C: What is necessary is just to form the layer which consists of H and X.

The material of the surface layer used in the present invention may be any amorphous material containing silicon, but is preferably a compound with a silicon atom containing at least one element selected from carbon, nitrogen and oxygen. a
Those containing -SiC as a main component are preferable.

When the surface layer is composed mainly of a-SiC, the amount of carbon is preferably in the range of 30 to 90% with respect to the sum of silicon atoms and carbon atoms.

In the present invention, it is necessary for the surface layer 1104 to contain hydrogen atoms and / or halogen atoms, which compensates for dangling bonds of silicon atoms and improves the quality of the layer, especially the optical properties. It is indispensable to improve the conductivity characteristics and the charge retention characteristics. The hydrogen content is usually 30 to 70 atomic%, preferably 35 to 65 atomic%, and most preferably 40 to 60 atomic%, based on the total amount of the constituent atoms. The content of the fluorine atom is usually 0.01 to 15 atomic%, preferably 0.1 to 15 atomic%.
Desirably, the content is 1 to 10 atomic%, and most preferably 0.6 to 4 atomic%.

The photoreceptor formed within the above range of the hydrogen and / or fluorine content can be sufficiently applied to a practically unprecedented one. That is, it is known that defects (mainly dangling bonds of silicon atoms and carbon atoms) existing in the surface layer adversely affect characteristics as a photoconductor for an image forming apparatus. For example, deterioration of charging characteristics due to injection of electric charge from the free surface to the photoconductive layer, fluctuation of charging characteristics due to a change in surface structure in an environment of use, for example, high humidity, for example, a change in surface structure under high humidity In addition, charge is injected into the surface layer by the photoconductive layer at the time of corona charging or light irradiation, and charges are trapped by the defects in the above-mentioned surface layer. Is an adverse effect.

However, by controlling the hydrogen content in the surface layer to 30 atomic% or more, defects in the surface layer are greatly reduced. As a result, electric characteristics and high-speed continuous usability are reduced as compared with the prior art. In this case, a dramatic improvement can be achieved.

On the other hand, when the hydrogen content in the surface layer is 71
If the content is at least atomic%, the hardness of the surface layer will decrease, and it will not be able to withstand repeated use. Therefore, controlling the hydrogen content in the surface layer within the above-mentioned range is one of the very important factors in obtaining a very excellent desired electrophotographic property. The hydrogen content in the surface layer is determined by the flow rate of H ₂ gas,
It can be controlled by the support temperature, discharge power, gas pressure and the like.

The fluorine content in the surface layer is set to 0.01
By controlling the content to the range of at least atomic%, it is possible to more effectively achieve the generation of the bond between silicon atoms and carbon atoms in the surface layer. Further, as a function of the fluorine atoms in the surface layer, it is possible to effectively prevent the bond between the silicon atom and the carbon atom from being broken due to damage such as corona.

On the other hand, when the fluorine content in the surface layer exceeds 15 atomic%, the effect of generating the bond between the silicon atom and the carbon atom in the surface layer and the effect of preventing the breaking of the bond between the silicon atom and the carbon atom are almost eliminated. Will not be recognized. Furthermore, since excess fluorine atoms hinder the traveling properties of the carriers in the surface layer, residual potential and image memory are remarkably recognized. Therefore, controlling the fluorine content in the surface layer within the above range is one of the important factors for obtaining desired electrophotographic characteristics. The fluorine content in the surface layer can be controlled by the flow rate of the H ₂ gas, the temperature of the support, the discharge power, the gas pressure, and the like, similarly to the hydrogen content.

The substance which can be a gas for supplying silicon (Si) used in forming the surface layer of the present invention includes:
Silicon hydride (silanes) in a gas state such as SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ , Si ₄ H ₁₀ or capable of being gasified
Is effectively used. Further, SiH is advantageous in terms of ease of handling at the time of forming a layer, good Si supply efficiency, and the like.
₄ and Si ₂ H ₆ are preferred. Further, if necessary, these source gases for supplying Si may be converted to H
₂ , diluted with a gas such as He, Ar, Ne or the like.

Examples of substances that can serve as a carbon supply gas include:
CH ₄ , C ₂ H ₆ , C ₃ H ₈ , C ₄ H _{10 and} other gaseous or gasifiable hydrocarbons can be used effectively.
CH ₄ and C ₂ H ₆ are preferred in terms of good supply efficiency and the like. Further, the raw material gas for supplying C may be used after being diluted with a gas such as H ₂ , He, Ar, or Ne as necessary.

Examples of substances that can be nitrogen or oxygen supply gas include NH ₃ , NO, N ₂ O, NO ₂ , H ₂ O, O ₂
Compounds in the gaseous state or gasifiable compounds such as ₂ , CO, CO ₂ , and N ₂ can be effectively used. Further, these nitrogen and oxygen supply source gases may be diluted with a gas such as H ₂ , He, Ar, Ne or the like as necessary.

In order to make it easier to control the rate of introduction of hydrogen atoms into the surface layer 1104 to be formed, these gases are further combined with hydrogen gas or silicon compound gas containing hydrogen atoms. Also, it is preferable to form a layer by mixing desired amounts. Further, each gas is not limited to a single species, and a plurality of species may be mixed at a predetermined mixture ratio.

As the source gas for supplying a halogen atom, a gaseous or gasifiable halogen compound such as a halogen gas, a halide, an interhalogen compound containing halogen, a silane derivative substituted with halogen, and the like are preferably mentioned. . Further, a gaseous or gasifiable silicon hydride compound containing a halogen atom, which contains a silicon atom and a halogen atom as constituent elements, can also be mentioned as an effective compound. Specific examples of the halogen compound that can be suitably used in the present invention include fluorine gas (F ₂ ), BrF, ClF, ClF ₃ , BrF ₃ ,
Inter-halogen compounds such as BrF ₅ , IF ₃ and IF ₇ can be mentioned. As a silicon compound containing a halogen atom, a silane derivative substituted with a so-called halogen atom,
Specifically, for example, silicon fluoride such as SiF ₄ or Si ₂ F ₆ can be mentioned as a preferable example.

In order to control the amount of hydrogen atoms and / or halogen atoms contained in the surface layer 1104, for example, the temperature of the support 1101, the raw material used to contain hydrogen atoms and / or halogen atoms, etc. The amount to be introduced into the reaction vessel, the discharge power and the like may be controlled.

Carbon atoms and / or oxygen atoms and / or
Alternatively, the nitrogen atoms may be evenly and uniformly contained in the surface layer, or the surface layer may have a portion having a non-uniform distribution in which the content changes in the thickness direction.

Further, in the present invention, the surface layer 1104
Preferably contains an atom for controlling conductivity as necessary. The atoms that control conductivity are deposited on the surface layer 110.
4 may be contained in a uniformly distributed state, or there may be a part contained in a non-uniform distribution state in the layer thickness direction.

Examples of the above-described atoms for controlling conductivity include so-called impurities in the field of semiconductors. An atom belonging to Group IIIb of the Periodic Table that provides p-type conductivity (hereinafter referred to as an “atom of Group IIIb”) ) Or an atom belonging to the Vb group of the periodic table that provides n-type conduction characteristics (hereinafter referred to as “Vb group atom”).

Examples of Group IIIb atoms include boron (B), aluminum (A), film (Ga), indium (In), and thallium (Tl). In particular, B, Al, Ga Is preferred. Group Vb atoms include:
Specifically, phosphorus (P), arsenic (As), antimony (S
b), bismuth (Bi) and the like, and P and As are particularly preferable.

The content of atoms for controlling conductivity contained in the surface layer 104 is preferably 1 × 10 ⁻³ to 1 ×.
10 ³ atomic ppm, more preferably 1 × 10 ^{-2 to} 5 × 1
Desirably, the concentration is 0 ² atomic ppm, most preferably 1 × 10 ^-1 to 1 × 10 ² atomic ppm. Atoms controlling conductivity,
For example, in order to structurally introduce a group IIIb atom or a group Vb atom, a source material for introducing a group IIIb atom or a source material for introducing a group Vb atom in a gaseous state may be used in forming a layer. Then, it may be introduced into the reaction vessel together with another gas for forming the surface layer 1104. As a source material for introducing a Group IIIb atom or a source material for introducing a Group Vb atom, a material which is gaseous at ordinary temperature and normal pressure or which can be easily gasified at least under layer forming conditions is employed. Is desirable. As such a raw material for introducing a Group IIIb atom, specifically, for introducing a boron atom, B ₂ H ₆ , B ₄ H ₁₀ , B ₅ H ₉ , B ₅ H ₁₁ ,
Boron hydride such as B ₆ H ₁₀ , B ₆ H ₁₂ , B ₆ H ₁₄ , BF
₃ , boron halides such as BCl ₃ and BBr ₃ . In addition, AlCl ₃ , GaCl ₃ , Ga (CH
₃ ) ₃ , InCl ₃ , TlCl _{3 and the} like.

[0142] being effectively used as a raw material for the Vb atoms introduced as the for introducing phosphorus atoms, PH _3, P
Phosphorus hydride such as ₂ H ₄ , PH ₄ I, PF ₃ , PF ₅ , PC
and phosphorus halides such as l ₃ , PCl ₅ , PBr ₃ , PBr ₅ and PI ₃ . In addition, AsH ₃ , AsF ₃ ,
AsCl ₃ , AsBr ₃ , AsF ₅ , SbH ₃ , SbF
_{3, SbF 5, SbCl 3,} SbCl 5, BiH 3, B
iCl ₃ , BiBr _{3 and the} like can also be mentioned as effective starting materials for introducing a group Vb atom.

Further, these raw materials for introducing atoms for controlling conductivity may be diluted with a gas such as H ₂ , He, Ar, Ne or the like, if necessary.

The thickness of the surface layer 1104 in the present invention is usually 0.01 to 3 μm, preferably 0.05 to 2 μm.
m, and most preferably 0.1 to 1 μm. If the layer thickness is less than 0.01 μm, the surface layer is lost due to abrasion during use of the photoreceptor, and the
If it exceeds m, a decrease in electrophotographic characteristics such as an increase in residual potential is observed.

The surface layer 1104 according to the present invention is carefully formed so that its required characteristics are provided as desired. That is, Si, C and / or N and / or
Alternatively, a substance containing O, H and / or X as a constituent element takes a form structurally from crystalline to amorphous silicon depending on its forming conditions, and has an electrical property between a conductive property, a semiconductive property, and an insulating property. Properties, and also show properties between photoconductive and non-photoconductive properties, respectively.
In the present invention, the formation conditions are strictly selected as desired so that a compound having desired properties according to the purpose is formed.

For example, in order to provide the surface layer 1104 mainly for the purpose of improving the pressure resistance, the surface layer 1104 is made of a non-single-crystal material having a remarkable electric insulating property in a use environment.

When the surface layer 1104 is provided for the purpose of mainly improving the continuous repetitive use characteristics and the use environment characteristics, the above-described degree of electrical insulation is reduced to some extent, and the applied light is irradiated to a certain degree. Formed as a sensitive non-single crystal material.

Further, in the charging device according to the present invention, in order to prevent the image flow due to the low resistance of the surface layer, or to prevent the influence of the residual potential, etc. It is preferable to appropriately control the resistance value during the production.

In order to form the surface layer 1104 having characteristics capable of achieving the object of the present invention, the temperature of the support
It is necessary to appropriately set the gas pressure in the reaction vessel as desired.

The temperature (Ts) of the support 1101 is appropriately selected in an optimum range according to the layer design, but is usually preferably 200 to 350 ° C., more preferably 23 to 23 ° C.
The temperature is desirably 0 to 330 ° C, optimally 250 to 300 ° C.

Similarly, the optimum range of the gas pressure in the reaction vessel is appropriately selected in accordance with the layer design, but usually 1 × 10 ^−4.
-10 Torr, preferably 5 × 10 ⁻⁴ -5 Torr,
Optimally, it is preferably 1 × 10 ^{−3 to} 10 Torr.

In the present invention, the preferable ranges of the temperature of the support and the gas pressure for forming the surface layer include the above-mentioned ranges. However, the conditions are usually not independently determined separately. It is desirable to determine the optimum value based on mutual and organic relations to form a photoreceptor having the following characteristics.

Further, in the present invention, it is also possible to provide a blocking layer (lower surface layer) in which the content of carbon atoms, oxygen atoms and nitrogen atoms is smaller than that of the surface layer between the photoconductive layer and the surface layer. It is effective to further improve the characteristics of.

In addition, the surface layer 1104 and the photoconductive layer 1103
A region in which the content of the carbon atom and / or the oxygen atom and / or the nitrogen atom changes so as to decrease toward the photoconductive layer 1103 may be provided. Thereby, the adhesion between the surface layer and the photoconductive layer can be improved, and the influence of interference due to light reflection at the interface can be further reduced. [Charge Injection Blocking Layer] In the photoreceptor for an image forming apparatus of the present invention, a charge injection blocking layer having a function of blocking charge injection from the conductive support side between the conductive support and the photoconductive layer. Is more effective. That is, the charge injection blocking layer has a function of preventing charge from being injected from the support side to the photoconductive layer side when the photosensitive layer is subjected to charging treatment of a fixed polarity on its free surface. Such a function is not exhibited when it is subjected to a charging treatment, that is, it has a polarity dependency. In order to provide such a function, the charge injection blocking layer contains a relatively large number of atoms for controlling conductivity as compared with the photoconductive layer.

The atoms for controlling the conductivity contained in the charge injection blocking layer may be distributed evenly and uniformly in this layer, or may be contained evenly in the layer thickness direction. May be present in a non-uniformly distributed state. When the distribution concentration is non-uniform, it is preferable that the compound be contained so as to be distributed more on the support side. However, in any case, it is necessary to be uniformly contained in the in-plane direction parallel to the surface of the support from the viewpoint of making the characteristics uniform in the in-plane direction.

The atoms controlling the conductivity contained in the charge injection blocking layer include so-called impurities in the semiconductor field, and the periodic table II imparting p-type conductivity can be used.
An atom belonging to Group I (hereinafter, referred to as a "Group III atom") or an atom belonging to Group V of the periodic table that provides n-type conduction characteristics (hereinafter, referred to as a "Group V atom") can be used.

As the Group III atom, specifically, B
(Boron), Al (aluminum), Ga (galilium),
There are In (indium), Ta (thallium) and the like, and B, Al and Ga are particularly preferable. Specific examples of Group V atoms include P (phosphorus), As (arsenic), Sb (antimony), and Bi (bismuth), and P and As are particularly preferable.

In the present invention, the content of atoms for controlling conductivity contained in the charge injection blocking layer is appropriately determined as desired so that the object of the present invention can be effectively achieved. １1 × 10 ⁴ atomic ppm, more preferably 50-5 × 10 ³ atomic ppm, optimally 1 ×
It is desirable that the concentration be 10 ² to 1 × 10 ³ atomic ppm.

Further, a carbon atom,
By containing at least one of a nitrogen atom and an oxygen atom, the adhesion to another layer provided in direct contact with the charge injection blocking layer can be further improved.

The carbon atoms, nitrogen atoms or oxygen atoms contained in this layer may be uniformly distributed in this layer, or may be contained evenly in the layer thickness direction. May be present in a non-uniformly distributed state. However, in any case, it is necessary to be uniformly contained in the in-plane direction parallel to the surface of the support from the viewpoint of making the characteristics uniform in the in-plane direction.

In the present invention, carbon atoms and / or nitrogen atoms and / or
Alternatively, the content of the oxygen atom is appropriately determined so that the object of the present invention can be effectively achieved. In the case of one kind, the content is two times or more. ^-3 to 50 atomic%, more preferably 5 × 10 ^{-3 to} 3
It is preferably 0 atomic%, optimally 1 × 10 ^-2 to 10 atomic%.

In the present invention, the hydrogen atoms and / or halogen atoms contained in the charge injection blocking layer compensate for dangling bonds existing in the layer, and are effective in improving the film quality.
The content of hydrogen atoms or halogen atoms or the sum of hydrogen atoms and halogen atoms in the charge injection blocking layer is preferably 1
It is desirable that the content be 5 to 50 atomic%, more preferably 5 to 40 atomic%, and most preferably 10 to 30 atomic%.

In the present invention, the thickness of the charge injection blocking layer is preferably from 0.1 to 5 μm, more preferably from 0.3 to 4 μm, from the viewpoint of obtaining desired electrophotographic characteristics and economic effects. Most preferably, it is 0.5 to 3 μm.

In the present invention, to form the charge injection blocking layer, a vacuum deposition method similar to the above-described method of forming the photoconductive layer is employed.

To form the charge injection blocking layer 1105 having characteristics capable of achieving the object of the present invention, the photoconductive layer 110
3, the mixing ratio between the gas for supplying Si and the diluting gas,
Gas pressure in the reaction vessel, discharge power and support 1101
Needs to be set appropriately.

The flow rate of H ₂ and / or He, which is a diluent gas, is appropriately selected in an optimum range according to the layer design.
The H ₂ and / or He is usually 1 to 20 times, preferably 3 to 15 times, optimally 5 times the Si supply gas.
It is desirable to control to a range of 10 to 10 times.

Similarly, the gas pressure in the reaction vessel is appropriately selected according to the layer design, but is usually in the range of 1 × 10 ^{−4 to} 10 T.
orr, preferably 5 × 10 ^{−4 to} 5 Torr, and most preferably 1 × 10 ^{−3 to} 1 Torr.

Similarly, the optimum range of the discharge power is appropriately selected according to the layer design. The discharge power to the flow rate of the gas for supplying Si is usually 1 to 7 times, preferably 2 to 7 times.
It is desirable to set the range to 6 times, optimally 3 to 5 times.

Further, the temperature of the support 1101 is appropriately selected in an optimum range according to the layer design, but is usually preferably 200 to 350 ° C., and more preferably 230 to 3 ° C.
It is desirable that the temperature is 30 ° C, optimally 250 to 300 ° C.

In the present invention, the desirable ranges of the mixing ratio of the diluent gas, the gas pressure, the discharge power, and the temperature of the support for forming the charge injection blocking layer include the above-mentioned ranges. Is usually not independently determined separately, but it is desirable to determine an optimum value of each layer forming factor based on mutual and organic relations to form a surface layer having desired properties.

In addition, in the photoreceptor for an image forming apparatus of the present invention, the photosensitive layer 1102 is provided on the support 1101 side.
It is desirable to have a layer region containing at least aluminum atoms, silicon atoms, hydrogen atoms and / or halogen atoms in a non-uniform distribution state in the layer thickness direction.

In the photoreceptor for an image forming apparatus of the present invention, for the purpose of further improving the adhesiveness between the support 1101 and the photoconductive layer 1103 or the charge injection blocking layer 1105, for example, Si3 ₃ N ₄ , SiO ₂ , SiO,
Alternatively, an adhesion layer formed of an amorphous material or the like containing a silicon atom as a base and including a hydrogen atom and / or a halogen atom and a carbon atom and / or an oxygen atom and / or a nitrogen atom may be provided. Further, as described above, a light absorbing layer for preventing the generation of an interference pattern due to light reflected from the support may be provided.

Next, an apparatus and a film forming method for forming a photosensitive layer will be described in detail.

FIG. 2 is a schematic diagram showing an example of an apparatus for manufacturing a photosensitive member for an image forming apparatus by a high-frequency plasma CVD method using an RF band as a power supply frequency (hereinafter referred to as "RF-PCVD"). The configuration of the manufacturing apparatus shown in FIG.

This apparatus is roughly classified into a deposition apparatus 210
0, a source gas supply device 2200, and an exhaust device (not shown) for reducing the pressure inside the reaction vessel 2111. A cylindrical support 2112, a heater 2113 for heating the support, a source gas introduction pipe 2114 are installed in a reaction vessel 2111 in the deposition apparatus 2100, and a high-frequency matching box 2115 is connected.

The raw material gas supply device 2200 includes SiH ₄ ,
Cylinders 2221 to 2226 and valves 2231 to 22 for source gases such as GeH ₄ , H ₂ , CH ₄ , B ₂ H ₆ , and PH _3.
36, inflow valves 2241 to 2246, outflow valves 22
51 to 2256 and mass flow controller 2211
, And a cylinder for each source gas is connected to a source gas introduction pipe 2114 in the reaction vessel 2111 via an auxiliary valve 2260.

The formation of a deposited film using this apparatus can be performed, for example, as follows.

First, the cylindrical support 2112 is set in the reaction vessel 2111, and the inside of the reaction vessel 2111 is evacuated by an exhaust device (not shown) (for example, a vacuum pump). Then,
The cylindrical support 211 is heated by the heater 2113 for heating the support.
2 is controlled to a predetermined temperature of 200 to 350 ° C.

The source gas for forming the deposited film is supplied to the reaction vessel 211.
In order to make the gas flow into the valve 1, the gas cylinder valves 2231 to 2231
236, confirming that the leak valve 2117 of the reaction vessel is closed, and checking the inflow valves 2241 to 224
6. Outflow valves 2251-2256, auxiliary valve 226
Make sure that the main valve 2 is open.
118, the reaction vessel 2111 and the gas pipe 211 are opened.
The inside of 6 is exhausted.

Next, the reading of the vacuum gauge 2119 was about 5 × 10 ^−6.
When reaching Torr, the auxiliary valve 2260 and the outflow valves 2251 to 2256 are closed.

Thereafter, each gas is introduced by opening the valves 2231 to 2236 by gas cylinders 2221 to 2226, and each gas pressure is adjusted to 2 by the pressure regulators 2261 to 2266.
Adjust to kg / cm ² . Next, the inflow valves 2241-2
The gas 246 is gradually opened to introduce each gas into the mass flow controllers 2211 to 216.

After the preparation for film formation is completed as described above, each layer is formed in the following procedure.

When the cylindrical support 2112 reaches a predetermined temperature, necessary ones of the outflow valves 2251 to 2256 and the auxiliary valve 2260 are gradually opened, and a predetermined gas is supplied from the gas cylinders 2221 to 2226 to the gas introduction pipe 2.
It is introduced into the reaction vessel 2111 via 114. Next, each source gas is adjusted by the mass flow controllers 2211 to 2216 so as to have a predetermined flow rate. At this time, the main valve 2 is monitored while watching the vacuum gauge 2119 so that the pressure in the reaction vessel 2111 becomes a predetermined pressure of 1 Torr or less.
Adjust the 118 opening. When the internal pressure is stabilized, an RF power source (not shown) having a frequency of 13.56 MHz is set to a desired power, and RF power is introduced into the reaction vessel 2111 through the high frequency matching box 2115 to generate glow discharge. The raw material gas introduced into the reaction vessel 2111 is decomposed by the discharge energy, and a deposited film mainly containing predetermined silicon is formed on the cylindrical support 2112. After the formation of the desired film thickness, the supply of the RF power is stopped and the outflow valves 2251 to 2251
By closing 256, the flow of gas into the reaction vessel 2111 is stopped, and the formation of the deposited film is completed.

By repeating the same operation a plurality of times, a desired photosensitive layer having a multilayer structure is formed.

When forming each layer, it goes without saying that all the outflow valves other than the necessary gas are closed.
, Outflow valves 2251-2256 from the reaction vessel 211
In order to avoid remaining in the gas pipe 2116 leading to 1, the outflow valves 2251 to 2256 are closed, the auxiliary valve 2260 is opened, and the main valve 2118 is fully opened to temporarily exhaust the system to a high vacuum. Perform as needed.

In order to make the film formation uniform, it is also effective to rotate the cylindrical support 2112 at a predetermined speed by a driving device (not shown) during the layer formation.

Further, it goes without saying that the above-mentioned gas types and valve operations are changed according to the production conditions of each layer.

Next, a description will be given of a method of manufacturing a photosensitive member for an image forming apparatus formed by a high-frequency plasma CVD (hereinafter, referred to as "VHF-PCVD") method using a VHF band frequency as a power supply.

The RF in the manufacturing apparatus shown in FIG.
By replacing the deposition apparatus 2100 by the PCVD method with the deposition apparatus 3100 shown in FIG. 3 and connecting to the source gas supply apparatus 2200 (not shown in FIG. 3), the VH shown in FIG.
A photoconductor manufacturing apparatus for an image forming apparatus having the following configuration by the F-PCVD method can be obtained.

This device is roughly classified into a vacuum-tight structure,
Reaction vessel 3111 capable of reducing pressure, source gas supply device 2
200 and an exhaust device (not shown) for reducing the pressure inside the reaction vessel 3111. Reaction vessel 31
11, a cylindrical support 3112, a support heating heater 3113, a raw material gas introduction pipe 3114, and an electrode are provided.
A high-frequency matching backs 3116 is further connected to the electrode. The inside of the reaction vessel 3111 is an exhaust pipe 31.
21 is connected to a diffusion pump (not shown).

Source gas supply device 2200 (see FIG. 2)
Represents SiH ₄ , GeH ₄ , H ₂ , CH ₄ , B ₂ H ₆ , P
Cylinder of the raw material gas H ₃ etc. 2221-2226 and the valve 2231 to 2236, flow-in valves 2241 to 2,246,
Outflow valves 2251 to 2256 and mass flow controllers 2211 to 2216 are provided, and a cylinder for each source gas is supplied to the reaction vessel 3111 via the auxiliary valve 2260.
Connected to a gas introduction pipe 3114 in the inside. The space 3130 surrounded by the cylindrical support 3112 forms a discharge space.

The formation of a deposited film in this apparatus by the VHF-PCVD method can be performed as follows.

First, the cylindrical support 3112 is set in the reaction vessel 3111, and the support rotating motor (drive device) 3
120, the cylindrical support 3112 is rotated, and a reaction vessel 311 is rotated by an exhaust device (not shown) (for example, a vacuum pump).
1 is evacuated through an exhaust pipe 3121 to form a reaction vessel 311.
The pressure in 1 is adjusted to 1 × 10 ⁻⁷ Torr or less. Subsequently, the temperature of the cylindrical support 3112 is heated and maintained at a predetermined temperature of 200 to 350 ° C. by the support heating heater 3113.

A source gas for forming a deposited film is supplied to a reaction vessel 311.
In order to make the gas flow into the valve 1, the gas cylinder valves 2231 to 2231
236, make sure that the leak valve (not shown) of the reaction vessel is closed,
46, outflow valves 2251 to 2256, auxiliary valve 22
First, the main valve (not shown) is opened to open the reaction vessel 3111 and the gas pipe 2.
The inside of 116 is exhausted.

Next, a vacuum gauge (not shown) reads about 5 × 10
^{When the} pressure reaches ^-6 Torr, the auxiliary valve 2260 and the outflow valves 2251 to 2256 are closed.

Thereafter, each gas is introduced from the gas cylinders 2221-2226 by opening the valves 2231-2236.
Each gas pressure is adjusted to 2kg by pressure regulators 2261 to 2266.
/ Cm ² to be adjusted. Next, the inflow valves 2241 to 224
6 is gradually opened, and each gas is
It is introduced into 211-2216.

After the preparation for film formation is completed as described above, each layer is formed on the cylindrical support 3112 as follows.

When the temperature of the cylindrical support 3112 reaches a predetermined temperature, necessary ones of the outflow valves 2251 to 2256 and the auxiliary valve 2260 are gradually opened, and a predetermined gas is supplied from the gas cylinders 2221 to 2226 to the source gas introduction pipe 3114. Through the discharge space 31 in the reaction vessel 3111
30. Next, the mass flow controller 2211
Adjustment is made so that each raw material gas has a predetermined flow rate according to 2216. At this time, the pressure in the discharge space 3130 is 1 T
The opening of the main valve (not shown) is adjusted while watching the vacuum gauge (not shown) so that the predetermined pressure is equal to or less than orr.

When the pressure becomes stable, the frequency becomes 500M.
Hz VHF power supply (not shown) is set to the desired power,
Discharge space 3130 through matching box 3116
VHF electric power is introduced to generate glow discharge. In the discharge space 3130 surrounded by the cylindrical support 3112 in this way, the introduced source gas is excited by the discharge energy and dissociated, and the cylindrical support 3112 is dissociated.
A predetermined deposited film is formed on 112. At this time, the layer is rotated at a desired rotational speed by the support rotating motor 3120 in order to achieve uniform layer formation.

After the desired film thickness is formed, the supply of the VHF power is stopped, the outflow valves 2251 to 2256 are closed to stop the gas from flowing into the reaction vessel 3111, and the formation of the deposited film is completed.

By repeating the same operation a plurality of times, a desired photosensitive layer having a multilayer structure is formed.

When forming each layer, it goes without saying that all the outflow valves other than the necessary gas are closed.
To avoid remaining in the gas pipe 2116 from the outflow valves 2251 to 2256 to the reaction vessel 3111, the outflow valves 2251 to 2256 are closed, the auxiliary valve 2260 is opened, and the main valve (not shown) is fully opened. An operation of once evacuating the inside to a high vacuum is performed as needed.

It goes without saying that the above-mentioned gas types and valve operations are changed according to the production conditions of each layer.

In any of the methods, the temperature of the cylindrical supports 2112 and 3112 at the time of forming the deposited film is particularly 200
℃ to 350 ° C, preferably 230 ° C to 330 ° C
The temperature is preferably 250 ° C. or more and 300 ° C. or less.

The heating method of the cylindrical support may be a heating element having a vacuum specification, and more specifically, an electric resistance heating element such as a winding heater of a sheath heater, a plate heater, a ceramic heater, or a halogen lamp. And a heat radiation lamp heating element such as an infrared lamp, and a heating element using a heat exchange means using a liquid, a gas, or the like as a heating medium. As the surface material of the heating means, metals such as stainless steel, nickel, aluminum, and copper, ceramics, heat-resistant polymer resins, and the like can be used.

[0206] In addition, a method is also used in which a heating-only container is provided in addition to the reaction container, and after heating, the cylindrical support is conveyed into the reaction container in a vacuum.

In particular, in the VHF-PCVD method,
The discharge space pressure is preferably 1 mTorr or more and 5 mTorr or more.
It is desirable to set the pressure to not more than 00 mTorr, more preferably not less than 3 mTorr and not more than 300 mTorr, most preferably not less than 5 mTorr and not more than 100 mTorr.

In the VHF-PCVD method, the discharge space 31
The size and shape of the electrodes provided on the electrode 30 may be any as long as they do not disturb the discharge.
A cylindrical shape of not less than mm and not more than 10 cm is preferable. At this time, the length of the electrode can be arbitrarily set as long as the electric field is uniformly applied to the cylindrical support 3112.

As the material of the electrode, any material can be used as long as its surface becomes conductive. For example, stainless steel, Al, Cr, Mo, Au, In, Nb, Te, V,
Metals such as Ti, Pt, Pb, and Fe, alloys thereof, and glass, ceramics, and plastics whose surfaces are subjected to a conductive treatment are generally used.

By implementing the contents described above alone or in combination, it is possible to bring out excellent effects.

FIG. 10 shows an example. Reference numeral 1001 denotes a photosensitive drum which is an image bearing member (charged member), and is a drum type electrophotographic photosensitive member which is driven to rotate at a predetermined peripheral speed (process speed) in the direction of arrow A.

The resistance value of the surface layer of the photoreceptor is preferably set at 1 to prevent the surface layer from being damaged by the voltage, that is, having a good electrical characteristic such as charge retention ability and charging efficiency. It preferably has a resistance of × 10 ^{10 to} 5 × 10 ¹⁵ Ω · cm. More preferably, 1 × 10 ¹² to 1 ×
10 ¹⁴ Ω · cm. The resistance was measured with an MΩ tester manufactured by HIOKI (manufacturer) at an applied voltage of 0.25 to 1 kV.

Reference numeral 1002 denotes a contact charging member using the above-described charge carrier, and a brush layer 1002 composed of the multipolar magnetic body 1002-2 and the charge carrier formed on the surface thereof.
-1. In addition, for example, a copper tape or an aluminum tape (manufactured by 3M) so that the applied voltage after the brush layer 1002-1 is formed on the multipolar magnetic body 1002-2 is favorably applied to each part of the brush layer 1002-1. electr
(i.e., ical tapes 1181 and 1170), a magnetically permeable and conductive tape may be provided, or a magnetically permeable conductive layer may be formed as described above.

The brush layer 1002-1 is composed of a charged carrier such as a magnetic filler, a magnetic mag, or a magnetic toner carrier as described above.

The brush layer 1002-1 of the charging member 1002
Has a resistance value of M manufactured by HIOKI (manufacturer) for maintaining good charging efficiency and preventing pinholes.
It is preferable to have a resistance of 1 × 10 ³ to 1 × 10 ¹² Ω · cm as measured by an Ω tester at an applied voltage of 0.25 to 1 kV. More preferably, 1 × 10 ⁴ to 1 × 10
⁸ Ω · cm.

Photosensitive drum 1001 and contact charging member 100
The nearest two gaps are 50-20 for the nip control.
It is preferable that the distance is set stably by a spacer (not shown) or the like within a range of 00 μm, and more preferably 100 to 100 μm.
0 μm. In addition, a mechanism such as a blade may be provided for nip adjustment.

Reference numeral 1003 denotes a power supply for applying a voltage to the charging member 1002. The power supply 1003 supplies a DC voltage V _dc.
Is the brush layer 1 made of the charge carrier of the charging member 1002
002-1, the outer peripheral surface of the rotating photosensitive drum 1001 is uniformly charged.

Further, the reflected light 1005 of the original image is irradiated onto the photosensitive drum 1001 to form an electrostatic latent image. This latent image is developed by a developing sleeve 1 coated with a developer.
006, the toner image is visualized as a toner image.
Is transcribed. The transfer residual toner is removed from the surface of the photosensitive drum 1001 by the cleaning blade 1009. On the other hand, the transfer material 1007 is discharged outside the apparatus main body after the toner image is fixed on the surface by the transfer device 1010. Further, with respect to the sheet interval during image formation (during copying), the photosensitive drum 1
By irradiating the 001 with strong exposure, the potential at that portion is removed, and the consumption of toner between sheets is suppressed.

Hereinafter, the image forming apparatus according to the present invention will be described in more detail by giving numerical values more specifically. However, the present invention is not limited to the following embodiments. (Embodiment Corresponding to Claims 1, 2 and 5) Using an apparatus for manufacturing a photoreceptor for an image forming apparatus by the RF-PCVD method shown in FIG. A photoreceptor comprising a charge injection blocking layer, a photoconductive layer, and a surface layer was manufactured under the conditions shown in FIG. Further, various photoconductors were produced by changing the mixing ratio of SiH ₄ and H ₂ and the discharge power of the photoconductive layer.

The prepared photoreceptor was set in an image forming apparatus (NP6060 manufactured by Canon Inc. was modified for testing), and the temperature dependence (temperature characteristics) of charging ability, memory and image defects were evaluated.

The temperature characteristic is such that the temperature of the photosensitive member is changed from room temperature to about 4 degrees.
The charging ability was measured by changing the temperature to 5 ° C., and the change of the charging ability per 1 ° C. of the temperature was measured, and 2 V / deg or less was determined to be acceptable.

Regarding memory and image flow, the image was visually determined, and 1: 1: very good, 2: good, 3:
No problem in practical use 4: Rank in four stages of practically difficult.

On the other hand, a glass substrate (Corning 7059) set on a cylindrical sample holder and Si
A wafer having a thickness of about 1 μm was formed on the wafer under the conditions for forming the photoconductive layer.
-Si film was deposited. An Al comb electrode is deposited on the deposited film on the glass substrate, and the characteristic energy (Eu) and localized level density (DOS) of the exponential function tail are measured by CPM, and then deposited on the Si wafer. The hydrogen content of the film was measured by FTIR.

FIG. 4 shows the relationship between Eu and temperature characteristics at this time.
D. O. FIG. 5 shows the relationship between S and the memory rank.
O. FIG. 6 shows the relationship between S and the image deletion rank. Each sample has a hydrogen content of 10 to 30 atomic%.
Was between.

As is clear from FIGS. 4, 5 and 6, Eu = 50-60 meV, D.E. O. S = 1 × 10 ¹⁴
It has been found that it is necessary to make the range of about 1 × 10 ¹⁶ cm ⁻³ in order to obtain good electrophotographic characteristics. Similarly, a sample of the surface layer was prepared, and the resistance value was measured using a comb-shaped electrode.

Subsequently, a contact charging member was manufactured under the following conditions.

The multi-pole magnetic material was constituted by forming a plastic magnet into a roller having a diameter of 18 mm as described above. It is preferable that the number of magnetic poles is configured to be plural within the nip width. In this embodiment, a plurality of magnetic poles of 6 to 18 poles are set and manufactured.

For the brush layer, a mixture of a carrier such as a magnetic iron oxide of 5 to 35 μm and a magnetic powder of a small particle size of 1 to 5 μm at a predetermined ratio was used as a charge carrier.
The charge carrier may have the same components as known carriers generally used for toner. The nip width is 6 ~
7 mm.

The prepared photoreceptor and charging member were set in an image forming apparatus (a Canon NP6060 modified for testing) as shown in FIG. 10, and the charging ability was evaluated. The result is shown in FIG. The resistance value of the charging member is 1 × 10 ³ to 1
When it had a resistance of × 10 ¹² Ω · cm, good charging was obtained. More preferably, 1 × 10 ⁴ to 1 × 10 ⁹ Ω ·
In the case of cm, good charging characteristics and environmental characteristics such as image deletion were obtained.

When the resistance of the charging member was less than 1 × 10 ³ Ω · cm, abnormal discharge and pinholes occurred, and the photosensitive member was damaged. When the density was 1 × 10 ¹² Ω · cm or more, the charging efficiency was reduced and charging due to injection hardly occurred.

Using the following a to f from the above-mentioned photosensitive members and using the following A to H from the above charging members, an image forming apparatus as shown in FIG.
0 modified for testing), temperature 23 ° C, humidity 60%
A printing durability test of 100,000 sheets was performed in an RH environment, and the image quality before and after was compared. FIG. 15 shows the results.

The voltage applied to the charging member was set at 600
V _dc . Also, during copying, the distance between the magnetic pole of the contact charging member and the member to be charged is fixed so that the distance between the magnetic pole and the member to be charged is minimized. / Sec. The durability test was performed with the magnetic brush, that is, the charging member fixed.

The conditions of the photosensitive member were as follows: a: Eu was 47 meV, D.E. O. S is 9 × 10^Fifteencm^-3  b: Eu is 50 meV; O. S is 2 × 10¹⁴cm^-3  c: Eu is 52 meV; O. S is 2 × 10^Fifteencm^-3  d: Eu is 55 meV; O. S is 6 × 10¹⁴cm^-3  e: Eu is 58 meV; O. S is 8 × 10^Fifteencm^-3  f: Eu is 64 meV; O. S is 1 × 10¹⁶cm^-3  The condition of the multipolar magnetic material and the brush layer of the contact charging member of the present invention is as follows: A: 7 × 10²Ω · cm 18veryStructure B: 6 × 10⁷Ω · cm 18veryStructure C: 5 × 10¹⁰Ω · cm 18veryStructure D: 3 × 10¹³Ω · cm 18veryStructure --------------- E: 5 × 10¹⁰Ω · cm 10veryStructure F: 5 × 10¹⁰Ω · cm 8veryStructure G: 5 × 10¹⁰Ω · cm 6veryStructure H: 5 × 10¹⁰Ω · cm 3veryStructure Based on the above results, durability is ensured when the magnetic pole interval is within the nip width.
The properties were found to be excellent.

Further, the characteristic energy of the exponential function tail obtained from the sub-bandgap light absorption spectrum is 50 to 6
0 meV and the density of localized states is 1 × 10 ¹⁴ to 1 × 10 ¹⁶
cm ^-3 and the brush layer is 1 × 10 ³ to 1 × 10 ¹²
It has been found that a suitable condition is to have a resistance of Ω · cm. Immediately after charging by applying 600 V _dc , the dark state potential was 550 to 600 V as measured by a surface electrometer manufactured by TRek (manufacturer). <Embodiment 2> Next, Embodiment 2 corresponding to claims 1, 2, 3, and 4 will be described.

Using the manufacturing apparatus shown in FIG. 2, a photosensitive member for an image forming apparatus was manufactured under the manufacturing conditions shown in FIG. At this time, Eu of the photoconductive layer and D.E. O. S is 55me each
V, 2 × 10 ¹⁵ cm ⁻³ .

As a charging member I, a magnetic body having 12 magnetic poles and a magnetic brush having a brush layer made of a carrier and magnetic powder as in the first embodiment were manufactured. The resistance was 5 × 10 ⁸ Ω · cm. The applied voltage condition to the charging member is 600 V _dc . Process speed is 250
At 1 mm / sec, the charging member was rotated in the same direction on the contact surface with the photoreceptor so that the peripheral speed ratio became 150% (the contact surfaces are respectively moved in the same direction: FIG. ) Arrow direction)).
When the same evaluation as in the first embodiment was performed, a good image was obtained.

By stopping the charging member so that its magnetic pole is closest to the member to be charged during copying, uneven charging does not occur due to a portion of the brush having a small brush density between the magnetic poles when the charging member rotates. No density unevenness occurred in the horizontal direction of the image. <Third Embodiment> Next, a third embodiment of the present invention will be described.

The magnetic poles of the multipolar magnetic body are configured as shown in FIG. 13A, and have a height of 10 to 100 along the magnetic poles.
A protrusion of μm was provided. The brush layer used was the same as in the second embodiment. The charging member was fixed so as to be closest to the member to be charged during the application of the voltage. Further, in a portion corresponding to the space between the papers, the application of the voltage is stopped, and the charging member is rotated at a predetermined speed in a direction opposite to the photoconductor (the surfaces contact with the photoconductor move in the same direction: FIG. 1 ( b) arrow direction). The resistance of the brush layer was 3 × 10 ⁸ Ω · cm.

The condition of the voltage applied to the charging member is 600 V _dc
And The process speed was 200 mm / sec.

Using the same photoreceptor as in the second embodiment, the same evaluation as in the first embodiment was carried out. As a result, a better image was obtained after the durability test than in the first embodiment.

This is considered to be due to the following effects.

A major factor in the reduction of the charge carriers is as follows.
It is mentioned that the charge carrier in a portion where the magnetic pole is weak moves onto the drum surface due to the electric field generated by the photoconductor, causing loss of the charge carrier. However, with the configuration shown in FIG. 3, the magnetic pole portion is adjacent to the photoreceptor, and the portion without the magnetic pole is separated from the photoreceptor. Since the carrier is fixed in the approaching direction, the portion of the charge carrier having no magnetic pole does not move to the surface of the photoconductor, and the effect of holding and suppressing the charge carrier increases.

In the configuration of the present embodiment, the charging member is rotated between the paper sheets so that the charging carrier such as magnetic powder in the state of the ears is leveled in the major axis direction in the magnetic pole portion.
Since the voltage application is stopped, even if the part without the magnetic pole is closest to the photoconductor, the photoconductor does not have an electric field, so the charge carrier does not move to the photoconductor, effectively reducing the charge carrier. Can be prevented. <Embodiment 4> An aluminum cylinder having an outer diameter of 80 mm and a length of 358 mm was used as a base, and a 5% methanol solution of alkoxymethylated nylon was applied by dipping to an undercoat layer (intermediate layer) having a thickness of 1 µm. Was provided.

Next, 10 parts (parts by weight, hereinafter the same) of the titanyl phthalocyanine pigment, 8 parts of polyvinyl butyral, and 50 parts of cyclohexanone were mixed and dispersed in a sand mill using 100 parts of glass beads having a diameter of 1 mm for 20 hours. To this dispersion was added methyl ethyl kent 70-120.
(Appropriate) parts were added and applied on the undercoat layer.
After drying for 0.2 minute, a 0.2 μm charge generation layer was formed.

Next, on this charge generation layer, styryl compound 10 having the structural formula shown in FIG.
Dissolves in the part. This solution was applied on a substrate by dipping and dried with hot air at 120 ° C. for 60 minutes.
A charge transport layer having a thickness of 0 μm was formed.

Next, a surface layer having a thickness of 1.0 μm was provided on the charge transport layer by the following method.

High melting point polyethylene terephthalate (A) obtained by using terephthalic acid as an acid component and ethylene glycol as a glycol component [intrinsic viscosity: 0.1;
7 dl / g, melting point: 258 ° C. (10
The measurement was performed at a heating rate of ° C./min. The measurement sample was 5 mg, and the amount of the polyester resin to be measured was 28 mg.
After melting at 0 ° C., it was quenched with ice water at 0 ° C.), glass transition temperature 70 ° C.] 100 parts and epoxy resin (B)
[Epoxy equivalent 160: aromatic ester type: trade name: Epicoat 190P (manufactured by Yuka Shell Epoxy)]
30 parts with phenol and tetrachloroethane (1: 1)
It was dissolved in 100 ml of the mixture. Further, 60 wt% of SnO ₂ powder was mixed into the above solution as charge retaining particles. Next, 3 parts of triphenylsulfonium hexafluoroantimonate (C) was added as a photopolymerization initiator to prepare a resin composition solution.

Light irradiation conditions were as follows: a 2 kW high-pressure mercury lamp (30 W / cm) was placed at 130 ° C. and 8 cm away from a position 20 cm away.
Irradiated for 2 seconds to cure.

The photosensitive drums thus manufactured were used in the image forming apparatus shown in FIG. 10 by using the charging members A to H described above. Under these conditions, a 100,000-sheet printing test was conducted in an environment of a temperature of 30 ° C. and a humidity of 80% RH.
The evaluation was made by focusing on the high-humidity image flow and the mottled stripes. The voltage condition applied to the charging member is 700 V _dc . The process was performed at a process speed of 200 mm / sec. The charging potential measured immediately after charging was 650 V or more. FIG. 18 shows the results of the evaluation. <Embodiment 5> Instead of the protective layer used in Embodiment 4, as the same binder as used in the charge transport layer,
60% by weight of SnO ₂ powder was mixed into an acrylic resin, and applied on the layer so as to have a film thickness of 1.0 μm to form a photoconductor surface layer. A durability test was performed in the same manner as in the fourth embodiment. The results are shown in FIG. <Comparative Example 1> A photoconductor similar to that of Embodiment 5 was prepared except that the protective layer of the photoconductor used in Embodiment 4 was not used.
A durability test was performed in the same manner as in the fifth embodiment. Figure 1 shows the results
FIG.

As shown in FIG. 18, the object to be charged is a surface layer containing a high-melting polyester resin and a cured resin and having the charge-holding particles such as SnO ₂ dispersed therein, or the charge-holding particles such as SnO _{2 in the} acrylic resin. It has been found that having a dispersed surface layer is a suitable condition. <Embodiment 6> An embodiment 1 using an apparatus for manufacturing a photoconductor for an image forming apparatus by the VHF-PCVD method shown in FIG.
A photoreceptor composed of a charge injection blocking layer, a photoconductive layer and a surface layer was formed on a mirror-finished aluminum cylinder (support) having a diameter of 108 mm in the same manner as described above under the conditions shown in FIG.

Further, various photoconductors were prepared by changing the mixing ratio of SiH ₄ and H _{2 in the} photoconductive layer, the discharge power, the temperature of the support and the internal pressure. An image forming apparatus (remodeled Canon NP6060 for testing)
, The temperature dependence (temperature characteristics) of the charging ability, the blank exposure memory, and the ghost memory were evaluated. The evaluation of the temperature characteristics and the memory was the same as in the first embodiment. Further, the density unevenness (roughness) of the halftone image was evaluated by performing a four-stage ranking similarly to the memory.

On the other hand, a glass substrate (Corning Company 7
059) and a-film having a film thickness of about 1 μm on a Si wafer.
A Si film was deposited. An Al comb electrode is deposited on the deposited film on the glass substrate, and the characteristic energy (Eu) and the localized level density (DOS) of the exponential function are measured by CPM. The deposited film was measured by FTIR for the hydrogen content and the absorption peak intensity ratio between the Si—H ₂ bond and the Si—H bond. Eu, D.E. O. The relationship among S, temperature characteristics, memory, and image deletion is the same as in the first embodiment. For good electrophotographic characteristics, Eu = 50 to 60 meV;
D. O. It was found that it was necessary that S = 1 × 10 ¹⁴ to 1 × 10 ¹⁶ cm ⁻³ . Further, as shown in FIG.
From the relationship between H ₂ / Si—H and roughness, Si—H ₂ /
It has been found that Si-H needs to be in the range of 0.2 to 0.5.

Among the photoreceptors, Eu, D.E. O. S and Si—H ₂ / Si—H are each 54 meV, 8 × 10 ¹⁴
For the photoreceptor of cm ^-3 and 0.29, using the charging member I,
When the same evaluation as in the second embodiment was performed, good results were obtained. <Embodiment 7> A photoconductor for an image forming apparatus was manufactured under the manufacturing conditions shown in FIG. 20 using the apparatus for manufacturing a photoconductor for an image forming apparatus shown in FIG. At this time, Eu, D.E.
O. S and Si-H ₂ / Si-H, respectively 53m
eV, 5 × 10 ¹⁴ cm ⁻³ , 0.29. Embodiment 6 A photoconductor for an image forming apparatus was manufactured using a charging member I, and a sixth embodiment was used.
When the same evaluation was made, good characteristics were obtained as in the sixth embodiment. <Embodiment 8> A photoconductor for an image forming apparatus was manufactured under the manufacturing conditions shown in FIG. 21 by using the apparatus for manufacturing a photoconductor for an image forming apparatus shown in FIG. At this time, Eu, D.E.
O. S and Si-H ₂ / Si-H, respectively 56m
eV, 1.3 × 10 ¹⁵ cm ⁻³ , 0.38. The produced photoreceptor for an image forming apparatus was evaluated using the charging member I in the same manner as in the sixth embodiment. As a result, good electrophotographic characteristics were obtained as in the sixth embodiment. <Embodiment 9> A photoconductor for an image forming apparatus was manufactured under the manufacturing conditions shown in FIG. 22 using the apparatus for manufacturing a photoconductor for an image forming apparatus shown in FIG. At this time, Eu, D.E.
O. S and Si-H ₂ / Si-H, respectively 59m
eV, 3 × 10 ¹⁵ cm ⁻³ , 0.45. Embodiment 4 A photoconductor for an image forming apparatus was manufactured using a charging member I, and a fourth embodiment was used.
When the same evaluation was made, good characteristics were obtained as in the fourth embodiment.

[0254]

As described above, according to the present invention, the polarity of the multipolar magnetic body of the contact charging member using the magnetic powder (magnetic brush) is closest to the charged surface (photosensitive surface) of the charged body. By adopting the specific configuration as described above with the main axis being used as a main component, extremely suitable image stabilization has been achieved.

Specifically, first, the configuration is such that the magnetic pole direction of the multipolar magnetic body of the charging member is closest to the photosensitive member surface.
In addition, by providing at least one magnetic pole in the nip, rotating the charging member between the papers, and stopping the application of voltage therebetween, an effect equivalent to blank exposure of an analog copying machine can be obtained. The result is that the magnetic powder (charge carrier) in the generatrix direction is leveled. Since the application of the voltage is stopped, the loss of the charge carrier can be suppressed, and the durability is dramatically improved. At the same time, the blank exposure memory which is a problem in the analog copier is naturally eliminated. Therefore, the blank exposure light source can be eliminated from the copying machine main body. In addition, the deterioration of the image quality due to the development of the charged carrier and the incorporation of the charged carrier into the developing machine to hinder normal toner development are prevented, and the maintenance-free operation is further promoted.

Second, in order to more effectively suppress the charge carrier loss, by providing a mechanism in which the portion where the magnetic pole is located in the major axis direction is provided with a protrusion, the charging member, which is a major factor in the reduction of the charge carrier, is provided. Reduced charge carrier movement.

Third, by combining a protective layer with improved durability with a new member to be charged (photoreceptor) having further improved temperature characteristics and electrical characteristics, no electricity is supplied at night.
High-humidity image deletion can be removed while saving energy and maintaining high image quality.

[Brief description of the drawings]

FIG. 1A is a side view of a charging member and a photosensitive drum according to a first embodiment. 2B is a front view of the charging member and the photosensitive drum according to the first embodiment.

FIG. 2 is an example of an apparatus for forming a photoreceptive layer of a photoreceptor for an image forming apparatus of the present invention, and is a schematic diagram of an apparatus for manufacturing a photoreceptor for an image forming apparatus by a glow discharge method using a high frequency in an RF band. FIG.

FIG. 3 is an example of an apparatus for forming a photoreceptive layer of a photoreceptor for an image forming apparatus of the present invention, and is a schematic diagram of an apparatus for manufacturing a photoreceptor for an image forming apparatus by a glow discharge method using a VHF band high frequency. FIG.

FIG. 4 is a diagram showing a relationship between characteristic energy (Eu) of an Urbach tail of a photoconductive layer in a photoconductor and temperature characteristics.

FIG. 5 shows the local density of states of the photoconductive layer in the photoconductor (D.
O. FIG. 4 is a diagram showing a relationship between S) and an optical memory.

FIG. 6 shows the local density of states of the photoconductive layer in the photoconductor (D.
O. FIG. 6 is a diagram showing the relationship between S) and image flow.

FIG. 7 shows Si—H ₂ bonds and S in the photoconductive layer in the photoconductor.
The figure which shows the relationship between the absorption peak intensity ratio of iH bond, and halftone density unevenness (roughness).

FIG. 8 is a diagram illustrating a configuration of a main part of a conventional image forming apparatus.

FIG. 9 is a diagram illustrating a configuration of a main part of another conventional image forming apparatus.

FIG. 10 is a diagram illustrating a configuration of a main part of the image forming apparatus according to the first embodiment;

FIGS. 11A to 11E are partial cross-sectional views each showing a configuration of a photoconductor.

FIG. 12 is a diagram showing the relationship between the resistance of the magnetic brush and the charged state.

13A is a side view of a charging member and a photosensitive drum according to Embodiment 3. FIG. (B) is a front view of the charging member and the photosensitive drum in the third embodiment.

FIG. 14 is a diagram showing conditions for manufacturing the photoconductor in Embodiment 1.

FIG. 15 is a view showing an evaluation of the image quality of the charging member according to the first embodiment before and after a printing test.

FIG. 16 is a diagram showing conditions for manufacturing a photoconductor in Embodiment 2.

FIG. 17 shows a structural formula of a styryl compound included in a charge-transporting layer in Embodiment 4.

FIG. 18 is a diagram for evaluating the image quality of the charging members according to the fourth and fifth embodiments before and after a printing test.

FIG. 19 is a diagram showing conditions for manufacturing a photoconductor in Embodiment 6.

FIG. 20 is a diagram illustrating manufacturing conditions of a photoconductor in Embodiment 7.

FIGS. 21A and 21B are diagrams illustrating manufacturing conditions of a photoconductor in Embodiment 8. FIGS.

FIG. 22 is a diagram illustrating manufacturing conditions of a photoconductor in Embodiment 9;

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 Contact charging member 101 Magnetic powder (brush layer) 102 Multipolar magnetic body (magnet roller) 103 Spacer 104 Charged body (image carrier, photoconductor) 1001 Charged body (image carrier, photoconductor) 1002 Contact charging Member 1002-1 Magnetic powder (brush layer) 1002-2 Multipolar magnetic body (magnet roller) 1003 High voltage power supply 1100 Photoconductor 1101 Support 1102 Photosensitive layer 1103 Photoconductive layer 1104 Surface layer 1105 Charge injection blocking layer 1106 Charge generation layer 1107 Charge transport layer

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-59-133569 (JP, A) JP-A-7-234567 (JP, A) JP-A-7-244418 (JP, A) (58) Field (Int.Cl. ⁷ , DB name) G03G 15/02

Claims (6)

(57) [Claims] 1. A charging device for charging a surface to be charged by bringing a cylindrical charging member into contact with a surface to be charged of a member to be charged and applying a voltage to the charging member. A cylindrical rotatable multi-pole magnetic body having a plurality of magnetic poles in a direction, a spacer for regulating a gap between the surface of the multi-pole magnetic body and the surface to be charged, and supported on the surface of the multi-pole magnetic body And a magnetic powder that is in contact with the surface to be charged and forms a band-shaped nip between the surface and the surface to be charged, and a distance between circumferentially adjacent magnetic poles on the surface of the multipolar magnetic body. Is set smaller than the circumferential width of the nip, and when the non-charging unnecessary area of the charged surface passes through the nip, the voltage applied to the charging member is cut off,
A charging device, comprising: rotating the multipolar magnetic body. 2. When the surface to be charged is charged via the multipolar magnetic body and the magnetic powder, the multipolar magnetic body is connected to any one of the magnetic poles of the multipolar magnetic body and the surface to be charged. The charging device according to claim 1, wherein the charging device is stopped at a position where a gap between the charging device and the device is minimized. 3. The surface to be charged includes a conductive support, a photoconductive layer including a non-single-crystal material containing a silicon atom as a base and containing a hydrogen atom and / or a halogen atom, and a surface having a function of retaining charges. A photoreceptive layer having a layer, wherein the photoconductive layer contains 10 to 30 atomic% of the hydrogen atoms and / or halogen atoms, and is obtained from a sub-bandgap light absorption spectrum at least in a light incident portion. The characteristic energy of the exponential function tail is 50 meV or more and 60 meV or less, the localized state density is 1 × 10 ^{14 to} 5 × 10 ¹⁶ cm ⁻³ , and the electric resistance value of the surface layer is 1 × 10 ^{10 to} 5 ×. 10 ¹⁵
The charging device according to claim 1, wherein the charging device is Ω · cm. 4. The charging device according to claim 1, wherein the member to be charged includes an organic photoconductor and a surface layer containing charge retaining particles. 5. The charging device according to claim 3, wherein a change in charging potential per 1 ° C. of the charged object is within 2 V / deg. 6.Claim 1Charging according to any one of the above items 5 to 5
Equipment andA member to be charged which is charged by the charging device,  The surface of the charged object charged by the charging device is exposed.
A latent image forming means for forming an electrostatic latent image by illuminating the toner;
A developing unit for forming an image, and a transfer unit for transferring the toner image to a transfer material.
An image forming apparatus.