JP3254482B2 - Plasma processing apparatus and cleaning method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a sample of the reaction chamber portion,
The present invention relates to a plasma processing apparatus for performing a plasma process such as a CVD process and an etching process.
Be removed reaction chamber particles, deposits or the like to the location
Cleaning method to be performed .

[0002]

2. Description of the Related Art FIG. 3 shows an electron cyclotron resonance (ECR) generally used for a method of forming a thin film.
FIG. 2 is a cross-sectional view schematically illustrating an apparatus (hereinafter, referred to as an ECR apparatus) that performs plasma processing by generating plasma by on-resonance.

[0003] The ECR apparatus comprises an apparatus main body 13 comprising a plasma generation chamber 11 and a reaction chamber 12, and a plasma generation chamber 1.
1, an excitation coil 14 connected to a DC power supply (not shown), and a waveguide 15 for introducing microwaves oscillated from a microwave oscillator (not shown) into the plasma generation chamber 11. And so on. Reference numeral 16 denotes a microwave introduction window, and 17 denotes a high frequency (R
F) a high-frequency generation source for applying the sample, 18 is a sample stage on which the sample 19 is placed, 50 is a sample stage for fixing the sample 19 on the sample stage 18 and preventing deposits and particles from adhering to the sample stage 18. Each shows a quartz holding ring for prevention.

[0004] The plasma generation chamber 11 is formed in a substantially cylindrical shape, and a first hole 20 for introducing microwaves is formed substantially in the center of the upper wall of the plasma generation chamber 11. Below the plasma generation chamber 11, a reaction chamber 12 having a larger diameter than the plasma generation chamber 11 is integrally formed. The reaction chamber 12 and the plasma generation chamber 1
1 is partitioned by a partition plate 21, and a second hole (plasma extraction window) 22 is formed at a substantially central portion of the partition plate 21.
Are formed.

Further, a first introduction pipe 23 is connected to a side wall of the reaction chamber 12, and an exhaust pipe 24 communicating with an exhaust system (not shown) is connected to a bottom of the reaction chamber 12. A second introduction pipe 25 is connected to an upper wall of the plasma generation chamber 11.

The high-frequency source 17 is composed of a high-frequency generator 26 and a matching box 27, and is connected to the microwave introduction window 16 via a flat plate electrode 28 sandwiched between the microwave introduction window 16 and the waveguide 15. Is applied with a high frequency.

A high frequency oscillator 31 for applying a high frequency to the sample 19 is mounted on the sample stage 18 by a matching box 30.
Connected through. A predetermined high frequency is applied to the sample 19 by the high-frequency oscillator 31 to form a thin film, so that a bias voltage applied to the sample 19 makes it possible to form a thin film having good step coverage even when the uneven surface of the sample 19 is fine. Can be formed.

FIG. 4A is an enlarged plan view schematically showing the vicinity of the sample stage 18, and FIG. 4B is an enlarged front sectional view thereof. The quartz holding ring 50 is formed in a ring shape, and three quartz holding pins 50a for pressing the sample 19 against the sample table 18 are formed on the inner side of the ring so as to protrude therefrom. Pin 50
The sample 19 pressed by a is placed on the sample stage 18.

In order to form, for example, a TiN thin film using the above apparatus, first, the inside of the apparatus main body 13 is depressurized by operating an exhaust system, and then TiCl ₄ is introduced into the reaction chamber 12 from the first introduction pipe 23. Supply. On the other hand, Ar, H ₂ , and N ₂ are supplied from the introduction pipe 25 into the plasma generation chamber 11. Thereafter, the inside of the apparatus main body 13 is set to a predetermined pressure.

Further, a high-frequency generation source 17 is energized to apply a high frequency to the microwave introduction window 16 so that the microwave introduction window 1
The TiN thin film is prevented from adhering to the microwave introduction window 16 due to the sputtering effect of Ar ions due to the bias voltage generated at 6. On the other hand, a microwave is introduced into the plasma generation chamber 11 from the microwave oscillator via the waveguide 15, and a DC current is supplied to the exciting coil 14 to generate a magnetic field in the plasma generation chamber 11. Then, high-energy electrons collide with the source gas in the plasma generation chamber 11, and the source gas is decomposed and ionized to generate plasma.

The generated plasma passes through the hole 22, is accelerated by a diverging magnetic field in the direction of arrow A in the drawing, is guided into the reaction chamber 12, and is deposited on the surface of the sample 19 placed on the sample stage 18. To form

Next, using the ECR apparatus, the sample 19
A description will be given of a procedure for continuously performing the plasma treatment on the substrate. FIG. 5 is a plan view schematically showing a plasma processing apparatus provided with two ECR apparatuses having the configuration shown in FIG.
The cassette stage 40 is, for example, a table on which a cassette containing 25 samples 19 for plasma processing is placed. The sample 19 in the cassette set on the cassette stage 40 is transferred to the orientation flat aligning mechanism 41 by the transfer robot 42a, and the orientation flat is adjusted. Thereafter, the sample 19 is transported again into the loading chamber 43 by the robot 42a. A sample holding cassette (not shown) is provided in the loading chamber 43, and 25 samples 19 are stored in the sample holding cassette in the loading chamber 43 by the robot 42a.

Next, the loading chamber 43 is evacuated,
First, one of the samples 19 in the loading chamber 43 is transferred to the sample table 18 of the plasma processing apparatus 45 (or the plasma processing apparatus 46) via the transfer chamber 44 by the robot 42b, and subjected to the plasma processing by the above-described method. You. During the plasma processing, another sample 19 is not subjected to the plasma processing by the robot 42b.
The sample is conveyed to the sample table 18 in the CR device 46 (or the ECR device 45), and is similarly subjected to plasma processing. When the plasma processing in the ECR device 45 is completed, the sample 19 is transferred to the original sample holding cassette in the loading chamber 43, and a new sample 19 is transferred to the ECR device 45. Thereafter, the ECR device 45 or the ECR device 4
Samples 19 are successively transferred to 6 and subjected to plasma processing, and then transferred to the original sample holding cassette. After the plasma processing is completed for all 25 samples 19 and all the samples 19 are stored in the sample holding cassette, the loading chamber 43 is isolated from the transfer chamber 44,
After returning to the atmospheric pressure, the sample 19 is transported to the first cassette stage 40 by the robot 42a, and a series of processing is completed.

Here, since the loading chambers 43 and 47, the transfer chamber 44, and the ECR devices 45 and 46 are all structured to be evacuated, the sample 19 is transferred to the loading chamber 43 (47), Until the processing is completed and it leaves the loading chamber 43 (47), it does not directly contact the atmosphere.

On the other hand, while the above process is in progress, 25 unprocessed samples 19 are transferred from the next cassette stage 48 to the orientation flat aligning mechanism 41 by the transfer robot 42a, and the orientation flat is adjusted. The sample is transferred to the sample holding cassette in the loading chamber 47. And
When all of the samples 19 that have been subjected to the plasma processing in the above steps are stored in the sample holding cassette in the loading chamber 43, they can be transported from another loading chamber 47 to the ECR devices 45 and 46. Therefore, after that, the sample 19 is conveyed to the ECR devices 45 and 46 in the same manner as described above, subjected to plasma processing, and the processed sample 19 is loaded into the loading chamber 47.
Is transferred to the original sample holding cassette. All samples 1
After 9 is returned to the loading chamber 47 by the robot 42b, the loading chamber 47 is returned to the atmospheric pressure, and the sample 19 is returned to the first cassette stage 48 by the robot 42a, and a series of processing is completed.

[0016]

Normally, when a thin film is formed on the sample 19 by performing a plasma treatment, deposits, particles, and the like also adhere to the inside of the reaction chamber 12. This reaction chamber 12
Plasma cleaning is periodically performed to remove deposits, particles, and the like inside. As this plasma cleaning method, a highly corrosive fluorine-based gas is introduced from the first introduction pipe 23, and plasma is irradiated for about 10 minutes to perform cleaning. At this time, the reaction chamber 12
Since not only the inner wall of the sample stage but also the sample stage 18 is irradiated with the etching plasma, etching, sputtering, etc. of the sample stage 18 occur, and a heater (not shown) embedded in the sample stage 18 and the sample stage 18 18 The surface is damaged. However, since it is difficult to remove and clean the sample table 18, the surface morphology of the sample table 18 deteriorates, the contact area with the sample 19 changes, and the process reproducibility is lost. .

Further, since the sample stage 18 is etched and sputtered, an etching substance from the sample stage 18 is deposited on the inner wall of the reaction chamber 12, and during the film forming process on the sample 19,
There is also a problem that heavy metal contamination occurs or the number of particles remaining on the processed sample 19 increases.

The present invention has been made in view of the above-mentioned problems, and has been made in consideration of the above-described problems, without damaging a sample stage .
Parts can easily be cleaned, and its object is to provide subsequent plasma treatment is a plasma processing apparatus capable of preventing metal contamination and increase in the number of particles of the sample is, and the method of cleaning it.

[0019]

According to the present invention, there is provided a plasma processing apparatus comprising:
A cassette that can be loaded with a cassette that holds
A set stage, a reaction chamber for performing a plasma treatment, the loading chamber. Used to time waiting for the reaction chamber, or a normal sample is conveyed from the reaction chamber in a vacuum state,
Placed in the loading chamber and the cassette stage
A transport robot that transports the regular sample between the cassette and the cassette
Oite the plasma treatment equipment and a preparative, the transport robot
A holder for holding a regular sample conveyed by a cassette, and the reaction chamber
Holds cleaning sample used for internal cleaning
And a sample holding means having a portion inside the loading chamber.
It is characterized in that it is provided in a part .

Further, a cleaning method for a plasma processing apparatus according to the present invention includes a cleaning method according to the present invention having the above-described configuration.
By cleaning the inside of the reaction chamber of the Zuma treatment device
And the sample holding means has the same shape as the regular sample.
Cleaning sample or smaller than the regular sample
Holding the cleaning sample of
A sample for use from the sample holding means and into the reaction chamber.
Transported and placed on the sample stage inside the reaction chamber.
To generate plasma in the reaction chamber
After cleaning, the cleaning sample on the sample
It is characterized by returning to the sample holding means .

[0021]

[0022]

Oite the plasma processing equipment according to the present invention, anti
Sample holding means inside the loading chamber connected to the reaction chamber
At the same time, along with the regular sample to be plasma treated,
Holds the cleaning sample used for cleaning
Place the cleaning sample in the loading chamber.
From the reaction chamber, and placed on a sample stage in the reaction chamber.
Generates plasma and is covered by the cleaning sample
The inside of the reaction chamber is cleaned without damaging the sample stage .

[0023]

[0024] In the cleaning method of a plasma processing apparatus according to the present invention, the sample holding means of the loading chamber portion, allowed to hold regular sample and the same shape, or a smaller shape cleaning sample for normal samples, these
From the loading chamber to the reaction chamber,
Plasma is generated by placing on the sample stage and cleaning
Do not damage the sample stage covered by the sample
Clean the inside of the reaction chamber. Cree of the same shape
Damage to the sample stage
Minimized and small cleaning samples
When using a sample, the area around the mounting position of the regular sample on the sample table
It is also possible to remove particles and deposits adhered to the surface .

Hereinafter, a plasma processing apparatus according to the present invention and
It will be described an embodiment of the cleaning method of that. Note that the configuration of the plasma processing apparatus according to the embodiment includes a sample holding unit.
3 and 5 except for the configuration of the sample holding cassette as shown in FIG. Therefore, here, only the configuration of the sample holding cassette provided inside the loading chambers 43 and 47 will be described, and the description of the configuration of the other parts will be omitted . 1 (a) is a plan view of the sample holding cassette schematically showing according to an embodiment of the present invention, FIG. 1 (b) is a front view thereof.

In the sample holding cassette 35 made of Ti, 2
A six-stage sample mounting shelf 36 is formed, and an upper sample protection member 37 made of a flat plate member slightly larger than the sample is disposed above the sample mounting shelf 36. Also,
A cassette elevating member 38 is attached to the lower portion of the sample holding cassette 35. When the robot transports the sample 19, the sample elevating member 38 moves the sample holding cassette 35 to an appropriate height. Adjusted. Conventionally, only the normal processing sample 19 to be subjected to the plasma processing needs to be mounted, so that the number of sample mounting shelves was 25. However, in this embodiment, a cleaning-dedicated sample is mounted in addition to the normal processing sample 19. For this purpose, 26 stages of sample mounting shelves 36 are formed. Since the sample holding cassette 35 having such a configuration is used, cleaning of the plasma processing apparatus described below can be performed.

In the cleaning method of the plasma processing apparatus according to the embodiment, first, the cleaning-dedicated specimens are first placed one by one in the specimen holding cassettes 35 in the loading chambers 43 and 47, respectively. Next, the 25 normal processing samples 19 in the cassette set on the cassette stage 40 are transferred to the orientation flat aligning mechanism 41 by the transfer robot 42a, and the orientation flat is adjusted. After that, the sample 19 is again transported to the sample holding cassette 35 in the loading chamber 43 by the robot 42a, and 25 normal processing samples 19 are stored. By this operation, 25 normal processing samples 19 and one cleaning-dedicated sample are stored in the sample holding cassette 35.

Next, the loading chamber 43 is evacuated,
First, one of the regular processing samples 19 in the loading chamber 43 is transferred to the sample table 18 of the ECR device 45 via the transfer chamber 44 by the robot 42b, and subjected to plasma processing. During the plasma processing, another normal processing sample 19 is transported by the robot 42b into the ECR device 46 where the plasma processing is not performed, and the plasma processing is performed similarly. When the processing in the ECR device 45 is completed, the normal processing sample 19 is transferred to the original sample holding cassette 35 in the loading chamber 43, and the new normal processing sample 19 is transferred to the sample table 18 of the ECR device 45.
Thereafter, the normal processing sample 19 is successively transferred to the ECR device 45 or the ECR device 46 by the same operation, subjected to plasma processing, and then transferred to the original sample holding cassette 35. After all of the 25 normal processing samples 19 have been subjected to the plasma processing and all the normal processing samples 19 have been stored in the sample holding cassette, a cleaning-dedicated sample passes through the transfer chamber 44, The gas placed on the table 18 is changed from a gas for film formation to a corrosive fluorine-based gas for cleaning, and the fluorine-based gas is introduced into the reaction chamber 12 from the first introduction pipe 23 to generate plasma. Cleaning is performed. After the plasma cleaning is performed with the cleaning-specific sample placed on the sample stage 18 in this manner, the cleaning-specific sample is returned to the original sample holding cassette 35. After this, the loading room 43 becomes the transfer room 4
Then, the normal processing sample 19 is transported to the first cassette stage 40 by the robot 42a, and a series of processing is completed. At this time, the cleaning-dedicated sample remains in the sample holding cassette 35 as it is, and when the ECR devices 45 and 46 are cleaned again, the same cleaning-dedicated sample is used. The same dedicated cleaning sample can be used until it needs to be replaced with a new one.

On the other hand, while the above process is in progress, 25 unprocessed regular processed samples 19 are transferred from the next cassette stage 48 to the orientation flat aligning mechanism 41 by the transfer robot 42a, and the orientation flat is adjusted. Is transferred to the sample holding cassette 35 in the loading chamber 47. Then, the regular processing sample 1 which has been subjected to the plasma processing in the above process
9 are all sample holding cassettes 35 in the loading chamber 43.
Is completed, the transfer from another loading chamber 47 to the ECR devices 45 and 46 becomes possible. Therefore, after that, the normal processing sample 19 is transferred to the ECR device 45 as in the above-described process.
The loaded normal processing sample 19 is transported to the sample holding cassette 35 in the loading chamber 47. After all the normal processing samples 19 are stored in the sample holding cassette 35 in the loading chamber 47 by the robot 42b, the cleaning-dedicated sample is transported to the sample table 18 in the same manner as described above, and fluorine-based gas is introduced. Then, cleaning is performed. After the cleaning is completed, the other 25 regular processing samples 19 are returned to the first cassette stage 48 by the robot 42a except for the cleaning-dedicated sample, and a series of processing is completed. The cleaning process does not necessarily have to be performed after the plasma processing of the 25 regular processing samples 19, but may be performed once for every 50 or 100 substrates.

Next, a method of cleaning a plasma processing apparatus according to another embodiment will be described. In the cleaning method of the plasma processing apparatus according to another embodiment, the sample holding cassette 35 provided in the loading chambers 43 and 47 is used.
Then, exactly the same steps as those in the above-described embodiment are repeated except that one cleaning-dedicated sample having a shape smaller than the regular processing sample 19 is stored in advance. Therefore, a detailed description of this embodiment will be omitted here.

EXAMPLE 1 AND COMPARATIVE EXAMPLE 1 Next, as a specific example and comparative example, when a cleaning-dedicated sample was placed on the sample stage 18 when cleaning was performed by the above method (Example 1). ) And the case where the cleaning is performed without placing the cleaning-dedicated sample on the sample stage 18 (Comparative Example 1), the sample after cleaning (silicon wafer)
An experiment was conducted to determine how different the degree of metal contamination of the 19 metals was.

In the method, after performing the cleaning processing of the plasma processing apparatus under the above two different conditions, immediately after forming the TiN thin film on the silicon wafer in the same manner as the method described in “Prior Art”, The amount of Fe present on the silicon wafer surface was measured by X-ray fluorescence analysis.

In the cleaning process, NF ₃ is used as a cleaning gas, and the cleaning pressure is 1 mTorr.
r, high frequency (13.56 M) applied to the microwave introduction window
Hz) at 150 W and a high frequency (13.5) applied to the sample stage.
6 MHz) to 500 W, microwave (2.45 GHz)
Was set to 2.8 kW, the temperature of the sample stage was set to 500 ° C., and 10
This was performed under the condition of applying a microwave for one minute. Further, the subsequent TiN thin film is made of TiCl ₄ :
The flow rate ratio of N ₂ : H ₂ : Ar is 15 sccm: 10 scc
m: 50 sccm: 43 sccm, the pressure during the reaction was 1 mTorr, the high frequency (13.56 MHz) applied to the microwave introduction window was 150 W, the microwave (2.45 GHz) was 2.8 kW, and the sample stage temperature was 50
The test was performed under the condition of setting the temperature to 0 ° C. and applying a microwave for 5 minutes.

When the abundance of Fe on the surface of the silicon wafer obtained by the above treatment was measured by X-ray fluorescence analysis, the abundance of Fe on the surface of the silicon wafer according to Example 1 was 12 × 10 ¹⁰ / cm ^2. Comparative Example 1
The amount of Fe present on the silicon wafer surface according to
It was found that the number was extremely large at 0 ¹⁰ pieces / cm ^2, and it was found that metal contamination of the silicon wafer can be prevented by mounting the cleaning-dedicated sample on the sample stage and performing cleaning.

[Examples 2 to 3 and Comparative Example 2] Next, a continuous experiment was conducted to examine how the degree of adhesion of particles to the sample 19 differs between the case where cleaning is performed and the case where cleaning is not performed. went. That is, when the regular processing sample (silicon wafer) 19 is processed by the same method as described in the above embodiment except that cleaning is not performed (Comparative Example 2), a sample having the same size as the silicon wafer is used as a cleaning-dedicated sample. (Example 2)
Further, it was examined how the number of particles on the silicon wafer was different when a sample having a shape slightly smaller than the silicon wafer was used as the cleaning-dedicated sample (Example 3).

First, in Examples (Examples 2 and 3), a CVD process (formation of a TiN thin film) on a silicon wafer was performed on 100 silicon wafers, and then a cleaning process was performed once. Was processed by the same method as that described in the above-mentioned embodiment, and 800 wafers were processed. In Comparative Example 2, 400 wafers were processed without performing the cleaning process, and the number of particles on the silicon wafer was measured every 50 wafers.

The conditions for the cleaning treatment and the conditions for forming the TiN thin film are the same as those in Example 1 and Comparative Example 1. FIG. 2 is a graph showing the results of the measurement, in which the vertical axis represents the number of particles having a diameter of 0.3 μm or more existing on a 6-inch silicon wafer, and the horizontal axis represents the number of silicon wafers subjected to the CVD process. I have.

As is clear from the results shown in FIG. 2, when the cleaning process is not performed (Comparative Example 2), 200
It can be seen that the number of particles has risen sharply since the time when the sheets were processed, and that various types of deposits causing particles in the plasma processing apparatus are cumulatively increased in the plasma processing apparatus unless the cleaning processing is performed. On the other hand, as can be seen from the results of the example, if the cleaning process is periodically performed, the deposits that cause the particles can be removed. In the case of the same size (Example 2), since the deposit gradually increases on the portion of the sample stage 18 where the silicon wafer is mounted, the particles gradually increase after the 450 wafers are processed. are doing. On the other hand, when a sample slightly smaller than the silicon wafer is used as the cleaning-dedicated sample (Example 3), since the deposits on the sample stage are almost removed by the cleaning process, the number of particles does not increase at all.

As described above, in the cleaning method of the plasma processing apparatus according to the embodiment, in addition to the regular processing sample 19 to be processed in the sample holding cassette 35 in advance, the plasma processing apparatus mounts the sample processing cassette 19 on the sample table 18 during plasma cleaning. Since a cleaning sample having the same shape as the normal processing sample 19 to be placed is provided, after the plasma processing of the normal processing sample 19 is completed, the gas supplied to the reaction chamber 12 is changed from the film forming gas to the corrosive gas. Even if plasma cleaning of the reaction chamber 12 is performed by using a fluorine-based gas for cleaning and the plasma-based cleaning of the reaction chamber 12 is performed, the cleaning can be easily performed without damaging the surface of the sample table 18 in which the heater is embedded. it can.

Further, in addition to the normal processing sample 19 to be processed in advance in the sample holding cassette 35, a sample smaller in size than the normal processing sample 19 to be mounted on the sample stage 18 during plasma cleaning is provided. In this case, when the plasma processing of the normal processing sample 19 is completed, the gas supplied to the reaction chamber 12 is changed from a film forming gas to a corrosive cleaning fluorine-based gas, and plasma cleaning of the reaction chamber 12 is performed. Particles and deposits adhering to the gap between the regular processing sample 19 and the quartz holding ring 50 during the plasma processing of the regular processing sample 19 can be removed without damaging the surface of the sample stage 18.

[0041]

As apparent from the above description, the present invention
In the plasma treatment equipment in accordance with, the reaction chamber for performing flop plasma treatment, or a sample to be transported from the reaction chamber
Inside the loading chamber to wait for a while in vacuum
At the same time, along with the regular sample to be plasma treated,
Cleaning samples used for cleaning
Since the sample holding means is provided, the sample holding means
Reaction of the held cleaning sample from the loading chamber
Transported into the chamber, placed on a sample stage in the reaction chamber,
The cleaning sample
Reaction chamber without damaging the covered sample stage surface
It is possible to clean the interior of easily.

[0042]

In the cleaning method for a plasma processing apparatus according to the present invention, a cleaning sample having the same shape as the regular sample or a shape smaller than the regular sample is held in the sample holding means inside the loading chamber . these
From the loading chamber to the reaction chamber,
It is placed on the sample stage to generate plasma and
Corrosive fluorine-based gas for cleaning
Plasma cleaning using a cleaning test
Cleaning can be performed easily without damaging the surface of the sample stage covered with the material.
Damage to the sample stage when using
Cleaning sample of small size
When used, particles and deposits attached to the vicinity of the mounting position of the regular sample on the sample table can also be removed .

[Brief description of the drawings]

FIG. 1A is a plan view schematically showing a sample holding cassette according to an embodiment of the present invention, and FIG. 1B is a front view thereof.

FIG. 2 illustrates the number of processed silicon wafers and the number of particles when the cleaning method of the plasma processing apparatus according to the embodiment is performed (Examples 2 to 3) and when the cleaning method is not performed (Comparative Example 2). 5 is a graph showing the relationship of FIG.

FIG. 3 is a schematic sectional view illustrating an example of an ECR device.

FIG. 4A is an enlarged plan view schematically showing the vicinity of a sample stage of the ECR apparatus, and FIG. 4B is an enlarged front sectional view thereof.

FIG. 5 is a plan view schematically showing a plasma processing apparatus provided with two ECR apparatuses.

[Explanation of symbols]

 12 Reaction chamber 18 Sample table 19 Sample (normal processing sample) 43, 47 Loading chamber

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/3065 H01L 21/68

Claims (3)

(57) [Claims] 1. A laser for holding a regular sample for plasma processing.
A cassette stage configured to allow a set to be mounted thereon, a reaction chamber for performing plasma processing, and a regular sample transported to or from the reaction chamber kept in a vacuum state over time. A loading chamber for loading the
Between the cassette mounted on the cassette stage
Oite the plasma treatment equipment and a transfer robot for transporting the normal sample holder of the normal sample conveyed by the conveying robot
And a cleaning agent used for cleaning the inside of the reaction chamber.
Sample holding means having a holding portion for
A plasma processing apparatus provided inside a loading chamber . 2. The reaction of the plasma processing apparatus according to claim 1.
A method of cleaning the inside of a chamber, wherein
A cleaning sample having the same shape as the regular sample
And the cleaning sample is stored in the sample storage.
Taken out of the holding means and transported into the reaction chamber,
It is placed on an internal sample stage, and plasma is generated in this state.
After plasma cleaning the reaction chamber,
Return the cleaning sample on the sample stage to the sample holding means.
Cleaning method features and to pulp plasma processing apparatus that be. 3. The reaction of the plasma processing apparatus according to claim 1.
A method of cleaning the inside of a chamber, wherein
For cleaning of a shape smaller than the regular sample
With the sample held, the cleaning sample is
Taken out of the material holding means, transported into the reaction chamber, and
It is placed on a sample table inside the reaction chamber, and plasma is generated in this state.
After plasma cleaning the reaction chamber,
The sample holding means holds the cleaning sample on the sample stage.
Cleaning of plasma processing equipment characterized by returning to
Method.