JP3264104B2 - Charged particle beam exposure apparatus and ashing method thereof - Google Patents
Charged particle beam exposure apparatus and ashing method thereofInfo
- Publication number
- JP3264104B2 JP3264104B2 JP15982194A JP15982194A JP3264104B2 JP 3264104 B2 JP3264104 B2 JP 3264104B2 JP 15982194 A JP15982194 A JP 15982194A JP 15982194 A JP15982194 A JP 15982194A JP 3264104 B2 JP3264104 B2 JP 3264104B2
- Authority
- JP
- Japan
- Prior art keywords
- exposure apparatus
- plasma
- ashing
- charged particle
- particle beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は荷電粒子ビーム露光装
置, 特に電子ビーム露光装置及びそのアッシング方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam exposure apparatus, and more particularly to an electron beam exposure apparatus and an ashing method thereof.
【０００２】半導体装置の製造において，その微細化に
伴い荷電粒子ビーム露光装置が微細なパターンの形成に
多用されている。しかし, その問題点も多く中でも荷電
粒子ビーム露光装置を長時間使用すると, 発生する荷電
ビーム粒子のチャージアップがあり, その対策として装
置内部のプラズマアッシングが大きな効果を上げてい
る。In the manufacture of semiconductor devices, a charged particle beam exposure apparatus has been widely used for forming fine patterns in accordance with miniaturization. However, there are many problems, and even if the charged particle beam exposure equipment is used for a long time, the charged particle generated is charged up, and as a countermeasure, plasma ashing inside the equipment has a great effect.
【０００３】しかし，プラズマアッシングの最適条件や
再現性の確認が装置の外からの観測ではわかり難いた
め，折角のプラズマアッシングも十分に効果を上げるこ
とができないので, 従来から, 光検出器を用いて装置の
外部よりプラズマ強度を検出して制御しているが, まだ
不十分でさらに十分な制御を行って効果的なアッシング
の実現が望まれる。However, it is difficult to confirm the optimum conditions and reproducibility of plasma ashing by observation from the outside of the apparatus, so that plasma ashing at an angle cannot be sufficiently effective. Although the plasma intensity is detected and controlled from outside the apparatus, it is still inadequate and it is desired that more effective control be performed to achieve effective ashing.
【０００４】本発明では荷電粒子ビーム露光装置の代表
例として電子ビーム露光装置について説明する。In the present invention, an electron beam exposure apparatus will be described as a typical example of a charged particle beam exposure apparatus.
【０００５】[0005]
【従来の技術】電子ビーム露光装置は使用していくうち
に, コラム内の各部材にチャージアップが発生して正確
なビーム露光ができなくなるため, 時々酸素(O2)ガスプ
ラズマをコラム内に発生させてアッシングする必要があ
る。2. Description of the Related Art As an electron beam exposure apparatus is used, each member in a column is charged up and accurate beam exposure cannot be performed, so that oxygen (O 2 ) gas plasma is sometimes injected into the column. It needs to be generated and ashed.
【０００６】従来, コラム内に発生したプラズマ光の検
出方法は，プラズマ光が見えるコラム壁にガラス窓を設
け, コラムの外側に光検出器としてPIN ダイオードを設
けて, 窓より漏れる僅かなプラズマ光を検出してアッシ
ング条件を確認していた。Conventionally, a method for detecting plasma light generated in a column is to provide a glass window on a column wall through which the plasma light can be seen, and to provide a PIN diode as a photodetector outside the column so that a small amount of plasma light leaking from the window can be detected. Was detected and the ashing condition was confirmed.
【０００７】また，コラムの構造上, 通常コラム壁に設
けるガラス窓は１つしかつくれないため，PIN ダイオー
ドも１つしか配置できなかった。なお，プラズマ光の発
生状況を詳細に見るためには，コラムを分解してコラム
上部をガラス板でシールし，コラム上部からその内部を
確認していた。Also, due to the structure of the column, only one glass window is usually provided on the column wall, so that only one PIN diode can be arranged. In order to see the plasma light generation in detail, the column was disassembled, the upper part of the column was sealed with a glass plate, and the inside of the column was checked from the upper part.
【０００８】[0008]
【発明が解決しようとする課題】従来例によると以下の
ような問題点がある。 複雑な内部構造のコラム内に発生したプラズマを，
コラム壁に設けられたガラス窓からでは十分に検出でき
ないので，アッシングの最適条件を見つけることはでき
ない。The prior art has the following problems. Plasma generated in a column with a complicated internal structure is
Since it cannot be detected sufficiently from the glass window provided on the column wall, it is not possible to find the optimum conditions for ashing.
【０００９】 PIN ダイオードの配置箇所が１箇所し
かないため，露光装置内に発生しているプラズマがアッ
シングしたい部分に均一に且つ的確に発生しているかど
うかが確認できない。Since there is only one PIN diode, it is not possible to confirm whether the plasma generated in the exposure apparatus is uniformly and accurately generated in a portion to be ashed.
【００１０】 露光装置内に発生しているプラズマを
詳細に確認するため，コラムを分解すると人手と時間を
必要とし，また装置の復帰時間が長くなり，装置のスル
ープットを下げる。When the column is disassembled to check the plasma generated in the exposure apparatus in detail, it takes time and labor and the return time of the apparatus becomes long, thereby reducing the throughput of the apparatus.
【００１１】本発明は，露光装置内部のアッシングの際
に，装置内の酸素プラズマの発生状況を詳細に検出して
アッシングの最適条件を見つけることを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to detect an ashing condition inside an exposure apparatus in detail to detect an oxygen plasma generation state in the apparatus and find an optimum ashing condition.
【００１２】[0012]
【課題を解決するための手段】上記課題の解決は， １）プラズマ発生用電極と該プラズマ発生用電極間の外
部に設けられた少なくとも１個の光検出器とが露光装置
内に設けられてなる荷電粒子ビーム露光装置，あるいは ２）前記光検出器が前記露光装置のコラムの中心の回り
に複数個設けられている前記１記載の荷電粒子ビーム露
光装置，あるいは ３）前記光検出器の出力端子が接地電位に接続するスイ
ッチを有する前記１記載の荷電粒子ビーム露光装置，あ
るいは ４）露光装置内をプラズマアッシングする方法であっ
て，光検出器を該露光装置内に且つプラズマ発生用電極
間の外部に設けて，プラズマ光の強度を検出しモニタす
ることにより，アッシング条件を設定することを特徴と
する荷電粒子ビーム露光装置のアッシング方法により達
成される。Means for solving the above problems are as follows: 1) A plasma generating electrode and at least one photodetector provided outside between the plasma generating electrodes are provided in an exposure apparatus. 2) the charged particle beam exposure apparatus according to the above 1, wherein a plurality of the photodetectors are provided around the center of a column of the exposure apparatus; or 3) the output of the photodetector. 4. The charged particle beam exposure apparatus according to the above 1, further comprising a switch having a terminal connected to a ground potential, or 4) a method for plasma ashing in the exposure apparatus, wherein a photodetector is provided in the exposure apparatus and between the plasma generating electrodes. Ashing method for a charged particle beam exposure apparatus, wherein ashing conditions are set by detecting and monitoring the intensity of plasma light outside the Achieved.
【００１３】[0013]
【作用】本発明では，光検出器を露光装置内に且つプラ
ズマ発生用電極間の外部に設けて，プラズマ光の強度を
検出しモニタすることにより，常に最適なアッシング条
件を維持するようにしている。In the present invention, the photodetector is provided inside the exposure apparatus and outside between the plasma generating electrodes to detect and monitor the intensity of the plasma light so that the optimum ashing condition is always maintained. I have.
【００１４】光検出器を装置内部に設けることにより，
従来の20〜30倍の検出出力が得られるため，アッシング
の最適条件が容易に確認できる（図５参照）。また，検
出器を複数個配置できるため，装置内の広範囲にわたっ
てプラズマ発生状況が確認できる。By providing a photodetector inside the device,
Since the detection output is 20 to 30 times higher than the conventional one, the optimum conditions for ashing can be easily confirmed (see FIG. 5). Further, since a plurality of detectors can be arranged, the plasma generation status can be confirmed over a wide range in the apparatus.
【００１５】ここで, 光検出器はプラズマ光の直接光を
検出してもよいし，あるいは反射光を検出してもよい。Here, the photodetector may detect the direct light of the plasma light or may detect the reflected light.
【００１６】[0016]
【実施例】図１は本発明の実施例１の説明図である。図
は露光装置のコラム内を示し， 1はプラズマ発生用電
極, 2は光検出器でPIN ダイオード, 3は反射板, 4は
スリット, 5 , 6はコラムの壁 ,13はビーム経路であ
る。FIG. 1 is an explanatory view of a first embodiment of the present invention. The figure shows the inside of the column of the exposure apparatus, 1 is an electrode for plasma generation, 2 is a photodetector, a PIN diode, 3 is a reflector, 4 is a slit, 5, and 6 are column walls, and 13 is a beam path.
【００１７】この実施例１では，プラズマの直接光を受
光できる位置にPIN ダイオード 2を配置している。図２
は本発明の実施例２の説明図である。In the first embodiment, the PIN diode 2 is disposed at a position where the direct light of the plasma can be received. FIG.
FIG. 4 is an explanatory view of Embodiment 2 of the present invention.
【００１８】この実施例２では，プラズマの反射光を受
光できる位置にPIN ダイオード 2を配置している。図３
は複数個の光検出器を配置した平面図である。In the second embodiment, the PIN diode 2 is arranged at a position where the reflected light of the plasma can be received. FIG.
FIG. 3 is a plan view in which a plurality of photodetectors are arranged.
【００１９】図において，11はコラム, 1A, 1B, 1C, 1D
はプラズマ発生用電極, 2A, 2B, 2C, ・・・, 1Hは光検
出器でPIN ダイオードである。PIN ダイオードはプラズ
マ発生用電極の周囲に複数個配置されている。In the figure, 11 is a column, 1A, 1B, 1C, 1D
Is a plasma generating electrode, 2A, 2B, 2C,..., 1H is a photodetector, which is a PIN diode. A plurality of PIN diodes are arranged around the electrode for plasma generation.
【００２０】図４は光検出器の設置位置の説明図であ
る。図において，11はコラム, 12は基板を載せるステー
ジが内蔵されたメインチャンバ, 13は電子ビームの経路
である。FIG. 4 is an explanatory view of the installation position of the photodetector. In the figure, 11 is a column, 12 is a main chamber in which a stage for mounting a substrate is built, and 13 is a path of an electron beam.
【００２１】図の網掛け部のコラム内に光検出器を設置
する。なお，光検出器の出力はハーメティックシール端
子を経由してコラム内に導出し，測定時には測定器に接
続し，それ以外の時は切替えスイッチにより接地電位に
落としてチャージアップを防止する。また，チャージア
ップ防止のために光検出器の中央受光部を除いた上面及
び側面を導電体で囲んでこの導電体を接地してもよい。A photodetector is installed in the shaded column in the figure. The output of the photodetector is led out into the column via the hermetic seal terminal, and is connected to the measuring instrument during measurement. At other times, the output is dropped to the ground potential by the changeover switch to prevent charge-up. Further, in order to prevent charge-up, the upper surface and the side surface of the photodetector except for the central light receiving portion may be surrounded by a conductor and the conductor may be grounded.
【００２２】次に，コラム内のアッシングの一例を説明
する。コラム内に酸素を導入し, その圧力を0.5 〜2 To
rrに保ち, プラズマ発生用電極間に 300〜400 KHz のRF
電力を約40 W印加して酸素プラズマを発生させてコラム
内をアッシングする。この際RF電力印加は, 例えば10秒
ずつ間隔を開けて 6回印加する。Next, an example of ashing in a column will be described. Oxygen is introduced into the column and the pressure is adjusted to 0.5 to 2 To
rr, 300-400 KHz RF between plasma generating electrodes
An electric power of about 40 W is applied to generate oxygen plasma and ashing inside the column. At this time, the RF power is applied six times at intervals of, for example, 10 seconds.
【００２３】また, アッシング効果を高めるために印加
電力を高くする方がよいが，40 W以上では, コラム内の
部材の金(Au)メッキを剥がす等の障害を発生するため，
できるだけ小電力の印加でアッシング効率を上げること
が望ましい。It is better to increase the applied power to enhance the ashing effect. However, if the applied power is 40 W or more, troubles such as peeling of gold (Au) plating of members in the column occur.
It is desirable to increase the ashing efficiency by applying as little power as possible.
【００２４】本発明は検出器をコラム内に入れることに
より, 検出感度を上げているため，アッシングのための
印加電力は少なくても従来例と同等の効果がある。この
ような実施例の効果を示す測定例を従来例と対比して図
５を用いて説明する。In the present invention, the detection sensitivity is increased by placing the detector in the column. Therefore, even if the applied power for ashing is small, the same effect as that of the conventional example can be obtained. A measurement example showing the effect of such an embodiment will be described with reference to FIG. 5 in comparison with a conventional example.
【００２５】図５は本発明の効果を示す図で，実施例
(1) と従来例(2) のRF印加電力に対する光検出器の出力
電圧の関係を示す。図より，実施例では検出能力が 1桁
以上改善されていることがわかる。FIG. 5 is a diagram showing the effect of the present invention.
The relationship between the RF applied power and the output voltage of the photodetector in (1) and the conventional example (2) is shown. From the figure, it can be seen that the detection ability is improved by one digit or more in the embodiment.
【００２６】[0026]
【発明の効果】本発明によれば，露光装置内部のアッシ
ングの際に，装置内の酸素プラズマの発生状況を詳細に
且つ感度よく検出して，アッシングの最適化が可能とな
る。According to the present invention, when ashing is performed inside an exposure apparatus, the generation state of oxygen plasma in the apparatus can be detected in detail and with high sensitivity, and the ashing can be optimized.
【図１】 本発明の実施例１の説明図FIG. 1 is an explanatory diagram of a first embodiment of the present invention.
【図２】 本発明の実施例２の説明図FIG. 2 is an explanatory view of a second embodiment of the present invention.
【図３】 複数個の光検出器を配置した平面図FIG. 3 is a plan view in which a plurality of photodetectors are arranged.
【図４】 光検出器の設置位置の説明図FIG. 4 is an explanatory diagram of an installation position of a photodetector.
【図５】 本発明の効果を示す説明図FIG. 5 is an explanatory view showing an effect of the present invention.
1, 1A, 1B, ・・・ プラズマ発生用電極 2, 2A, 2B, ・・・ 光検出器でPIN ダイオード 3 反射板 4 スリット 11 コラム 12 メインチャンバ 13 荷電粒子ビーム経路 1, 1A, 1B, ... Plasma generating electrode 2, 2A, 2B, ... Pin diode with photodetector 3 Reflector 4 Slit 11 Column 12 Main chamber 13 Charged particle beam path
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平５−267144（ＪＰ，Ａ) 特開 昭62−202517（ＪＰ，Ａ) 特開 平５−175112（ＪＰ，Ａ) 特開 昭61−20321（ＪＰ，Ａ) 特開 昭59−114741（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/027 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-5-267144 (JP, A) JP-A-62-2202517 (JP, A) JP-A-5-175112 (JP, A) JP-A 61-202 20321 (JP, A) JP-A-59-114741 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/027
Claims (4)
電極間の外部に設けられた少なくとも１個の光検出器と
が露光装置内に設けられてなることを特徴とする荷電粒
子ビーム露光装置。1. A charged particle beam exposure apparatus comprising: a plasma generation electrode; and at least one photodetector provided outside between the plasma generation electrodes, provided in the exposure apparatus.
中心の回りに複数個設けられていることを特徴とする請
求項１記載の荷電粒子ビーム露光装置。2. A charged particle beam exposure apparatus according to claim 1, wherein a plurality of said photodetectors are provided around a center of a column of said exposure apparatus.
続するスイッチを有することを特徴とする請求項１記載
の荷電粒子ビーム露光装置。3. The charged particle beam exposure apparatus according to claim 1, wherein an output terminal of the photodetector has a switch connected to a ground potential.
法であって，光検出器を該露光装置内に且つプラズマ発
生用電極間の外部に設けて，プラズマ光の強度を検出し
モニタすることにより，アッシング条件を設定すること
を特徴とする荷電粒子ビーム露光装置のアッシング方
法。4. A method for performing plasma ashing in an exposure apparatus, wherein a photodetector is provided inside the exposure apparatus and outside between electrodes for plasma generation to detect and monitor the intensity of plasma light. An ashing method for a charged particle beam exposure apparatus, wherein ashing conditions are set.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15982194A JP3264104B2 (en) | 1994-07-12 | 1994-07-12 | Charged particle beam exposure apparatus and ashing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15982194A JP3264104B2 (en) | 1994-07-12 | 1994-07-12 | Charged particle beam exposure apparatus and ashing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0831716A JPH0831716A (en) | 1996-02-02 |
| JP3264104B2 true JP3264104B2 (en) | 2002-03-11 |
Family
ID=15701992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15982194A Expired - Fee Related JP3264104B2 (en) | 1994-07-12 | 1994-07-12 | Charged particle beam exposure apparatus and ashing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3264104B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001203135A (en) * | 2000-01-20 | 2001-07-27 | Semiconductor Leading Edge Technologies Inc | Exposure apparatus cleaning method and exposure apparatus |
| JP7094752B2 (en) * | 2018-03-29 | 2022-07-04 | 株式会社ニューフレアテクノロジー | Charged particle beam irradiator |
-
1994
- 1994-07-12 JP JP15982194A patent/JP3264104B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0831716A (en) | 1996-02-02 |
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