JP3267261B2 - Method for producing high silicon steel sheet having good surface properties and excellent workability - Google Patents
Method for producing high silicon steel sheet having good surface properties and excellent workabilityInfo
- Publication number
- JP3267261B2 JP3267261B2 JP01037799A JP1037799A JP3267261B2 JP 3267261 B2 JP3267261 B2 JP 3267261B2 JP 01037799 A JP01037799 A JP 01037799A JP 1037799 A JP1037799 A JP 1037799A JP 3267261 B2 JP3267261 B2 JP 3267261B2
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- Prior art keywords
- steel sheet
- siliconizing
- sicl
- gas
- furnace
- Prior art date
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Description
【0001】[0001]
【発明が属する技術分野】本発明は浸珪処理法による高
珪素鋼板の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a high silicon steel sheet by a siliconizing treatment method.
【0002】[0002]
【従来の技術】Si含有量が4wt%以上の高珪素鋼板
を工業的に製造する方法として、特開昭62−2270
78号公報等に示される浸珪処理法が知られている。こ
の製造方法は、Si:4wt%未満の薄鋼板をSiCl
4と高温で反応させることによりSiを浸透させ、浸透
したSiを板厚方向に拡散させることにより高珪素鋼板
を得る方法であり、例えば、特開昭62−227078
号公報や特開昭62−227079号公報等では、鋼板
をSiCl4が5〜35wt%含まれる無酸化性雰囲気
中において1023℃〜1200℃の温度で連続的に浸
珪処理し、コイル状の高珪素鋼板を得ている。2. Description of the Related Art Japanese Patent Application Laid-Open No. 62-2270 discloses a method for industrially producing a high silicon steel sheet having a Si content of 4 wt% or more.
No. 78 is known. In this manufacturing method, a thin steel sheet containing less than 4 wt%
4 is a method of obtaining a high silicon steel sheet by infiltrating Si by reacting at high temperature with Si and diffusing the permeated Si in the thickness direction.
In Japanese Unexamined Patent Application Publication No. 62-227079 and the like, a steel sheet is subjected to continuous siliconizing treatment at a temperature of 1023 ° C. to 1200 ° C. in a non-oxidizing atmosphere containing 5% to 35% by weight of SiCl 4 to form a coil. High silicon steel sheet is obtained.
【0003】一般に、鋼板の浸珪処理ではSi供給用の
原料ガスとしてSiCl4が使用され、このSiCl4
は下記の反応式により鋼板と反応してSiが鋼板表層に
浸透する。 SiCl4+5Fe→Fe3Si+2FeCl2 このようにして鋼板表層に浸透したSiは、SiCl4
を含まない無酸化性ガス雰囲気中で鋼板を均熱処理する
ことにより板厚方向に拡散される。[0003] In general, the siliconizing treatment of the steel sheet SiCl 4 is used as a raw material gas for Si supply, the SiCl 4
Reacts with the steel sheet according to the following reaction formula, and Si penetrates into the surface layer of the steel sheet. SiCl 4 + 5Fe → Fe 3 Si + 2FeCl 2 The Si that has permeated the steel sheet surface layer in this manner is SiCl 4
The steel sheet is diffused in the thickness direction by soaking in a non-oxidizing gas atmosphere containing no.
【0004】このようなプロセスにより鋼板を連続的に
浸珪処理するために、図5に示されるような連続浸珪処
理ラインが用いられている。この連続浸珪処理ラインは
入側から加熱帯、浸珪帯(浸珪処理炉)、拡散均熱帯お
よび冷却帯を備え、鋼板を加熱帯において処理温度まで
連続的に加熱した後、浸珪帯でSiCl4と反応させる
ことによりSiを浸透させ、次いで、拡散均熱帯におい
てSiを板厚方向に拡散させるための熱処理を連続的に
施した後、冷却帯で冷却することでコイル状の高珪素鋼
板が製造される。[0004] In order to continuously siliconize a steel sheet by such a process, a continuous siliconizing line as shown in FIG. 5 is used. This continuous siliconizing line is equipped with a heating zone, a siliconizing zone (siliconizing furnace), a diffusion zone and a cooling zone from the entry side. in impregnated with Si by reacting with SiCl 4, then subjected to heat treatment for diffusing Si in the thickness direction in the diffusion soaking zone continuously coiled high silicon by cooling in the cooling zone A steel plate is manufactured.
【0005】このようにSiCl4を原料ガスとして鋼
板を連続的に浸珪処理する場合、浸珪処理雰囲気中に含
まれる酸素分(水分及び酸素)がSiCl4ガスと反応
してシリカが生成され、このシリカが炉内ハースロール
等の鋼板に接触する部分に付着し、鋼板に押し疵を発生
させるという問題がある。このような問題を解消するた
めには、浸珪処理雰囲気中の水分量と酸素濃度を極限ま
で低減させることが望ましいが、連続炉内の水分及び酸
素濃度を極限まで低減させるには極めて長い時間を要
し、またその実現は非常に困難である。[0005] When continuously siliconizing treatment steel sheets thus the SiCl 4 as a raw material gas, silica oxygen component contained in the siliconizing treatment atmosphere (moisture and oxygen) are reacted with SiCl 4 gas is generated However, there is a problem that the silica adheres to a portion in contact with the steel plate, such as a hearth roll in a furnace, and generates a pressing flaw on the steel plate. In order to solve such a problem, it is desirable to reduce the water content and the oxygen concentration in the siliconizing treatment atmosphere to the utmost, but it takes an extremely long time to reduce the water and oxygen concentrations in the continuous furnace to the utmost. And it is very difficult to achieve.
【0006】また、浸珪処理により製造される高珪素鋼
板は、浸珪処理雰囲気中の水分や酸素によって鋼板表面
や粒界が酸化され、この酸化により鋼板の加工性が著し
く劣化してしまう問題がある。このうち粒界酸化による
加工性の劣化については、浸珪処理のように高珪素鋼板
を高温下で長時間保持した場合、結晶粒の成長によって
板厚方向に結晶粒が貫通するため、結晶粒界が酸化され
るとその粒界結合力が低下し、この結果、鋼板の加工性
が劣化してしまうことによる。[0006] In addition, the high silicon steel sheet manufactured by the siliconizing treatment has a problem that the surface and grain boundaries of the steel sheet are oxidized by moisture and oxygen in the siliconizing treatment atmosphere, and the oxidation significantly deteriorates the workability of the steel sheet. There is. Regarding the deterioration of workability due to grain boundary oxidation, when a high silicon steel sheet is held at a high temperature for a long time as in the case of siliconizing treatment, the crystal grains grow and penetrate in the thickness direction. When the boundaries are oxidized, the grain boundary bonding force decreases, and as a result, the workability of the steel sheet deteriorates.
【0007】そこで、このような浸珪処理雰囲気中に含
まれる水分や酸素による問題を回避するため、母材鋼板
に予めCを添加しておき、このCを雰囲気中の酸素分と
反応させること(すなわち、鋼板の脱炭反応を利用する
こと)により、浸珪反応が起こる鋼板表面付近に存在す
る水分及び酸素濃度を極限まで下げるという方法が考え
られ、この方法を利用した高珪素鋼板の製造方法が特開
平8−209325号公報で提案されている。Therefore, in order to avoid such a problem caused by moisture and oxygen contained in the siliconizing atmosphere, it is necessary to add C in advance to the base steel sheet and react this C with oxygen in the atmosphere. (That is, by utilizing the decarburization reaction of the steel sheet), a method of reducing the moisture and oxygen concentrations existing near the steel sheet surface where the siliconizing reaction occurs to a minimum can be considered, and the production of high silicon steel sheet using this method is considered. A method has been proposed in JP-A-8-209325.
【0008】一般に、製造される高珪素鋼板のC含有量
が0.005wt%を超えると鉄損劣化及び磁気時効が
問題となるため、上記の方法を実施するためには脱炭反
応による鋼板表面の雰囲気改善(水分及び酸素の低減
化)に十分なC量と浸珪処理後に残留するC量を考慮し
た上で、母材鋼板に添加するC量を決定しなければな
い。In general, when the C content of the manufactured high silicon steel sheet exceeds 0.005 wt%, iron loss deterioration and magnetic aging become problems. The amount of C to be added to the base steel sheet must be determined in consideration of the amount of C sufficient for improving the atmosphere (reduction of moisture and oxygen) and the amount of C remaining after the siliconizing treatment.
【0009】[0009]
【発明が解決しようとする課題】しかし、工業的な連続
炉では炉内雰囲気中の水分及び酸素濃度が下記(1)〜(3)
等の要因で変化し、水分及び酸素濃度が経時的に一定で
安定した雰囲気を得ることは極めて困難である。 (1) 炉開口部のシールの経時劣化による水分及び酸素の
侵入 (2) 炉内耐火物中に含有している水分の昇熱に伴う放散 (3) 操業条件の変化(在炉時間、炉内温度)However, in an industrial continuous furnace, the moisture and oxygen concentrations in the furnace atmosphere are as follows (1) to (3).
It is extremely difficult to obtain a stable and stable atmosphere in which the moisture and oxygen concentrations are constant over time. (1) Moisture and oxygen intrusion due to aging deterioration of the seal at the furnace opening (2) Dissipation of water contained in the refractory inside the furnace due to heat rise (3) Changes in operating conditions (furnace time, furnace time Inside temperature)
【0010】このため上記の方法を実施する場合には、
これらの要因によって鋼板の脱炭量にバラツキを生じる
ことが避けられないが、製鉄プロセスにおいてこのよう
な脱炭量の変化に合わせて母材鋼板のC量を変更するこ
とは、時間的にもコスト的にも到底不可能である。以上
のような理由から、上述した鋼板の脱炭反応を利用する
高珪素鋼板の製造方法を工業的規模で実施することは難
しく、したがって、従来の技術では高珪素鋼板の表面性
状を損なうシリカの発生を防止しつつ、加工性にも優れ
た高珪素鋼板を工業的規模で安定的に製造することは難
かしかった。Therefore, when the above method is performed,
Although it is inevitable that the decarburization amount of the steel sheet varies due to these factors, changing the C amount of the base steel sheet in accordance with such a change in the decarburization amount in the iron making process requires time. It is impossible at all in terms of cost. For the reasons described above, it is difficult to carry out the method for producing a high silicon steel sheet utilizing the above-described decarburization reaction of a steel sheet on an industrial scale, and therefore, in the related art, silica which impairs the surface properties of the high silicon steel sheet is used. It has been difficult to stably produce a high silicon steel sheet excellent in workability on an industrial scale while preventing generation.
【0011】したがって本発明の目的は、浸珪処理雰囲
気中に含まれる酸素分によるシリカの発生を防止すると
ともに、鋼板表面や粒界での酸化を防止し、これによっ
て表面性状と加工性がともに優れた高珪素鋼板を工業的
に安定して製造することができる方法を提供することに
ある。Accordingly, an object of the present invention is to prevent the generation of silica due to oxygen contained in the siliconizing atmosphere and to prevent oxidation on the steel sheet surface and grain boundaries, thereby improving both the surface properties and workability. An object of the present invention is to provide a method capable of industrially stably producing an excellent high silicon steel sheet.
【0012】[0012]
【課題を解決するための手段】このような課題を解決す
るため、本発明の高珪素鋼板の製造方法は以下のような
特徴を有する。 [1] 4wt%未満のSiを含有する母材鋼板を、浸珪処
理炉内においてSiCl4ガスを含む雰囲気中で浸珪処
理することにより高珪素鋼板を製造する方法であって、
母材鋼板のC含有量を浸珪処理後の鋼板の目標C含有量
よりも高くしておき、浸珪処理雰囲気中に含まれる酸素
分によって母材鋼板の脱炭反応を生じさせつつ、母材鋼
板の浸珪処理を行う方法において、浸珪処理雰囲気中に
含まれる酸素分の量に応じて浸珪処理炉内に供給するS
iCl4含有ガス中の酸素当量を調整することにより、
浸珪反応時の母材鋼板の脱炭量を制御し、目標とするC
含有量の高珪素鋼板を得ることを特徴とする表面性状が
良好で且つ加工性の優れた高珪素鋼板の製造方法。In order to solve such problems, the method for manufacturing a high silicon steel sheet according to the present invention has the following features. [1] A method for producing a high silicon steel sheet by subjecting a base material steel sheet containing less than 4 wt% of Si to siliconizing treatment in an atmosphere containing SiCl 4 gas in a siliconizing treatment furnace,
The C content of the base steel sheet is set higher than the target C content of the steel sheet after the siliconizing treatment, and the decarburization reaction of the base steel sheet is caused by the oxygen content contained in the siliconizing treatment atmosphere. In the method of performing the siliconizing treatment of a steel sheet, the S supplied to the siliconizing furnace in accordance with the amount of oxygen contained in the siliconizing atmosphere.
By adjusting the oxygen equivalent in the iCl 4 containing gas,
Controls the amount of decarburization of the base steel sheet during the siliconizing reaction to achieve the target C
A method for producing a high silicon steel sheet having good surface properties and excellent workability, characterized by obtaining a high silicon steel sheet having a high content.
【0013】[2] 上記[1]の製造方法において、浸珪処
理炉に供給するSiCl4含有ガス中にシロキサンを含
有させ、且つその含有濃度を調整することにより、Si
Cl4含有ガス中の酸素当量を制御することを特徴とす
る表面性状が良好で且つ加工性の優れた高珪素鋼板の製
造方法。 [3] 上記[1]または[2]の製造方法において、浸珪処理後
の高珪素鋼板のC含有量が30〜50ppmとなるよ
う、浸珪反応時の母材鋼板の脱炭量を制御することを特
徴とする表面性状が良好で且つ加工性の優れた高珪素鋼
板の製造方法。[2] In the manufacturing method of the above [1], the siloxane is contained in the SiCl 4 -containing gas supplied to the siliconizing furnace, and the concentration of the siloxane is adjusted.
A method for producing a high silicon steel sheet having good surface properties and excellent workability, characterized by controlling an oxygen equivalent in a Cl 4 -containing gas. [3] In the method of [1] or [2], the decarburization amount of the base steel sheet during the siliconizing reaction is controlled such that the C content of the high silicon steel sheet after the siliconizing treatment is 30 to 50 ppm. A method for producing a high silicon steel sheet having good surface properties and excellent workability.
【0014】[0014]
【発明の実施の形態】本発明法は、4wt%未満のSi
を含有する母材鋼板を、浸珪処理炉内においてSiCl
4ガスを含む雰囲気中で浸珪処理することにより高珪素
鋼板を製造するに当り、母材鋼板のC含有量を浸珪処理
後の鋼板の目標C含有量よりも高くしておき、浸珪処理
雰囲気中に含まれる酸素分によって母材鋼板の脱炭反応
を生じさせつつ、母材鋼板の浸珪処理を行う方法であ
る。DETAILED DESCRIPTION OF THE INVENTION The method of the present invention is intended to reduce the Si content to less than 4 wt%.
Steel sheet containing SiCl in a siliconizing furnace
In producing a high silicon steel sheet by performing a siliconizing treatment in an atmosphere containing four gases, the C content of the base steel sheet is set to be higher than a target C content of the steel sheet after the siliconizing treatment. This is a method of performing a siliconizing treatment of a base material steel sheet while causing a decarburization reaction of the base material steel sheet by an oxygen content contained in a processing atmosphere.
【0015】このような母材鋼板の脱炭反応を利用する
方法、すなわち、母材鋼板に予めCを添加しておき、こ
のCを雰囲気中の酸素分と反応させることにより、浸珪
反応が起こる鋼板表面付近に存在する水分及び酸素を低
減させる方法を実施する場合、母材鋼板に添加するC量
は、浸珪処理時に鋼板表面付近に存在する酸素や水分と
十分に反応できるだけの量を確保する一方で、浸珪処理
後には磁気特性に悪影響を及ぼさない程度の量まで低減
化、すなわち脱炭される必要がある。また、一方におい
ては、上述したように炉内雰囲気中の水分や酸素濃度は
経時的に変化するため、その変化に対応した脱炭反応の
コントロールが必要となる。A method utilizing such a decarburization reaction of the base steel sheet, that is, by adding C in advance to the base steel sheet and reacting this C with oxygen in the atmosphere, the siliconizing reaction can be prevented. When implementing a method of reducing the moisture and oxygen existing near the steel sheet surface that occurs, the amount of C added to the base steel sheet should be an amount that can sufficiently react with the oxygen and moisture existing near the steel sheet surface during the siliconizing treatment. On the other hand, after the siliconizing treatment, it is necessary to reduce the amount to a level that does not adversely affect the magnetic properties, that is, decarburize. On the other hand, as described above, since the water and oxygen concentrations in the furnace atmosphere change with time, it is necessary to control the decarburization reaction corresponding to the change.
【0016】このような要求に対して、本発明者らは浸
珪処理炉内に原料として供給するSiCl4含有ガス中
の酸素当量を変化させることにより、通常の工業炉の雰
囲気変化に対応した脱炭反応のコントロールが可能であ
ることを見い出した。すなわち、炉内雰囲気中の酸素濃
度や水分量が上述した要因で変化しても、これに応じて
SiCl4含有ガス中の酸素当量を有意に変化させてや
れば、母材鋼板の脱炭反応を所望の範囲にコントロール
できることが判った。In response to such a demand, the present inventors responded to a change in the atmosphere of an ordinary industrial furnace by changing the oxygen equivalent in the SiCl 4 -containing gas supplied as a raw material into the siliconizing furnace. It has been found that the decarburization reaction can be controlled. That is, even if the oxygen concentration and the water content in the furnace atmosphere change due to the above-described factors, if the oxygen equivalent in the SiCl 4 -containing gas is significantly changed accordingly, the decarburization reaction of the base steel sheet is performed. Was found to be able to be controlled within a desired range.
【0017】したがって、浸珪処理雰囲気中の水分量
(露点)及び酸素濃度を監視し、その変化に応じて浸珪
処理炉内に導入されるSiCl4含有ガス中の酸素当量
を調整すれば、浸珪処理雰囲気中の水分量及び酸素濃度
の変化に拘りなく、母材鋼板の脱炭量を所望のレベルに
制御し、これによって目標とするC含有量を有する高珪
素鋼板を得ることができる。一方において、鋼板の上記
脱炭反応により母材鋼板の表面付近に存在する酸素分が
消費され、SiCl4の酸化によるシリカの発生や鋼板
の酸化が適切に防止される。一般に、1023〜120
0℃の浸珪処理温度ではSiCl4は鋼板表面付近で酸
化され易いが、上記脱炭反応によって母材鋼板の表面付
近の酸素分が低減されることによりシリカの発生が効果
的に抑えられ、また鋼板表面や粒界の酸化も抑制され
る。Therefore, by monitoring the water content (dew point) and oxygen concentration in the siliconizing treatment atmosphere and adjusting the oxygen equivalent in the SiCl 4 -containing gas introduced into the siliconizing treatment furnace according to the changes, Regardless of the change in the water content and oxygen concentration in the siliconizing atmosphere, the decarburization amount of the base steel sheet is controlled to a desired level, whereby a high silicon steel sheet having a target C content can be obtained. . On the other hand, the oxygen content existing near the surface of the base steel sheet is consumed by the decarburization reaction of the steel sheet, so that generation of silica and oxidation of the steel sheet due to oxidation of SiCl 4 are appropriately prevented. Generally, 1023-120
At a siliconizing temperature of 0 ° C., SiCl 4 is easily oxidized near the surface of the steel sheet, but the decarburization reaction reduces the oxygen content near the surface of the base steel sheet, thereby effectively suppressing the generation of silica. Also, oxidation of the steel sheet surface and grain boundaries is suppressed.
【0018】このため本発明法では、浸珪処理雰囲気中
に含まれる酸素分の量(水分量及び酸素濃度)に応じて
浸珪処理炉内に供給するSiCl4含有ガス中の酸素当
量を調整することにより、浸珪反応時の母材鋼板の脱炭
量を制御し、目標とするC含有量の高珪素鋼板を得るも
のである。For this reason, in the method of the present invention, the oxygen equivalent in the SiCl 4 -containing gas supplied into the siliconizing furnace is adjusted according to the amount of oxygen (water content and oxygen concentration) contained in the siliconizing atmosphere. By doing so, the amount of decarburization of the base material steel sheet during the siliconizing reaction is controlled, and a high silicon steel sheet having a target C content is obtained.
【0019】さらに、浸珪処理炉内に供給するSiCl
4含有ガス中の酸素当量をコントロールする手段とし
て、原料ガスであるSiCl4の酸化物であり、SiC
l4と似通った物質特性を有するシロキサンに着目し、
このシロキサンを液体若しくは気体の状態でSiCl4
またはSiCl4含有ガス中に含有させ、その含有濃度
を管理することで、浸珪処理炉内に供給するSiCl4
含有ガス中の酸素当量をコントロールするという着想の
下に、以下のような実験を行った。Further, SiCl supplied into the siliconizing furnace is
As a means for controlling the oxygen equivalent in the 4- containing gas, an oxide of SiCl 4 as a raw material gas is used.
Focusing on siloxanes having similar material properties and l 4,
This siloxane is converted to liquid or gaseous SiCl 4
Or SiCl 4 is contained in containing gas, by managing the content level, SiCl 4 supplied to the siliconizing treatment furnace
The following experiment was conducted under the idea of controlling the oxygen equivalent in the contained gas.
【0020】この実験では、試験用連続浸珪処理炉内に
供給するSiCl4ガス中にシロキサンを添加すること
によりSiCl4含有ガス(原料ガス+キャリアガス)
中の酸素当量を変化させ、C含有量が異なる母材鋼板の
浸珪処理を実施し、各母材鋼板毎にその脱炭量を測定し
た。各母材鋼板の浸珪処理条件(浸珪量、処理温度、在
炉時間等)は全て同一とし、炉内雰囲気は露点−30
℃、酸素濃度10ppmに調整した。その結果を図1に
示す。In this experiment, SiCl 4 -containing gas (source gas + carrier gas) was added by adding siloxane to the SiCl 4 gas supplied into the test continuous siliconizing furnace.
The oxygen equivalent in the medium was changed, and a base material steel sheet having a different C content was subjected to a siliconizing treatment, and the decarburization amount was measured for each base material steel sheet. The siliconizing conditions (silicide amount, processing temperature, furnace time, etc.) for all base steel sheets are all the same, and the furnace atmosphere is dew point -30.
° C and the oxygen concentration were adjusted to 10 ppm. The result is shown in FIG.
【0021】図1によれば、母材鋼板のC量の違いによ
り脱炭量のレベルに差はあるものの、いずれの母材鋼板
においても、SiCl4含有ガス中の酸素当量(シロキ
サン濃度)を変更することにより母材鋼板の脱炭量を適
切にコントロールできることが判る。このように原料ガ
ス(SiCl4)中にシロキサンを添加し、その濃度を
調整することによって母材鋼板の脱炭量をコントロール
する方法では、鋼板面に供給する原料ガスにシロキサン
を介して直接酸素を混入させるため、原料ガスと反応す
る鋼板面に直接酸素を供給して鋼板中のCと反応させる
ことができる。このため炉内に供給するSiCl4含有
ガスや浸珪処理雰囲気中に水分や酸素を供給するような
方法に較べ、供給した酸素を鋼板中のCと効率よく反応
させることができ、鋼板の脱炭反応を直接的且つ容易に
制御することができる。According to FIG. 1, although there is a difference in the level of the decarburization amount due to the difference in the C content of the base steel sheet, the oxygen equivalent (siloxane concentration) in the SiCl 4 -containing gas is changed in any base steel sheet. It is understood that the decarburization amount of the base steel sheet can be appropriately controlled by changing the value. As described above, in the method of controlling the decarburization amount of the base steel sheet by adding siloxane to the raw material gas (SiCl 4 ) and adjusting the concentration thereof, the raw material gas supplied to the steel sheet surface is directly oxygenated via the siloxane. Can be directly supplied to the surface of the steel sheet reacting with the raw material gas to react with C in the steel sheet. Therefore, the supplied oxygen can be made to react more efficiently with C in the steel sheet as compared with the method of supplying water or oxygen into the SiCl 4 -containing gas or the siliconizing atmosphere supplied into the furnace. The charcoal reaction can be controlled directly and easily.
【0022】一方において、SiCl4含有ガス中に添
加されたシロキサンは、それ自体が重合することにより
シリカを発生させる反応も起こす。しかし、シロキサン
を含めたSiCl4含有ガス中の酸素当量の上限を規制
し、好ましくはこれを2.5%以下とすることにより、
上記反応を問題のないレベル、すなわち、シリカを生成
したとしても鋼板の表面性状に悪影響を及ぼさない程度
のレベルとすることができる。On the other hand, the siloxane added to the SiCl 4 -containing gas also causes a reaction to generate silica by polymerizing itself. However, by regulating the upper limit of the oxygen equivalent in the SiCl 4 -containing gas including siloxane, and preferably controlling this to 2.5% or less,
The above reaction can be at a level that does not cause any problem, that is, a level that does not adversely affect the surface properties of the steel sheet even if silica is generated.
【0023】このように、浸珪処理雰囲気中に供給する
SiCl4含有ガス中の酸素当量をシロキサン添加量で
管理することにより、母材鋼板の脱炭量を容易にコント
ロールすることができる。したがって、例えば、母材鋼
板のC含有量を浸珪処理後の鋼板の目標C含有量に対し
て一定レベル以上高くしておき、浸珪処理雰囲気中の水
分量及び酸素濃度を監視(測定)し、これに応じて母材
鋼板の脱炭量(したがって、浸珪処理後の鋼板のC含有
量)が目標レベルとなるようSiCl4含有ガス中への
シロキサン添加量を管理することにより、浸珪処理時の
母材鋼板の表面付近に存在する水分および酸素の量を極
力低減させるとともに、浸珪処理後の鋼板中のC含有量
を十分低いレベルまで低減できる。これによりシリカの
発生と鋼板の酸化が防止され、押し疵等の無い良好な表
面性状を有し、且つ加工性にも優れた高珪素鋼板が安定
して製造できる。As described above, the amount of decarburization of the base steel sheet can be easily controlled by controlling the oxygen equivalent in the SiCl 4 -containing gas supplied into the siliconizing atmosphere by the siloxane addition amount. Therefore, for example, the C content of the base steel sheet is set higher than a target C content of the steel sheet after the siliconizing treatment by a certain level or more, and the water content and the oxygen concentration in the siliconizing treatment atmosphere are monitored (measured). In response to this, the amount of siloxane added to the SiCl 4 -containing gas is controlled so that the decarburization amount of the base steel sheet (therefore, the C content of the steel sheet after the siliconizing treatment) becomes a target level. The amount of moisture and oxygen existing near the surface of the base steel sheet during the siliconizing treatment can be reduced as much as possible, and the C content in the steel sheet after the siliconizing treatment can be reduced to a sufficiently low level. Thereby, generation of silica and oxidation of the steel sheet are prevented, and a high silicon steel sheet having good surface properties without press flaws and excellent workability can be stably manufactured.
【0024】本発明法においてSiCl4含有ガス中の
酸素当量を制御するには、上記のようにSiCl4含有
ガス中にシロキサンを含有させ、且つその含有量を調整
するのが最も簡便で、しかも鋼板の脱炭反応を直接的且
つ容易に制御できるという点で有利であるが、このよう
なシロキサンの添加及びその濃度の管理とともに或いは
これに代えて、炉内に供給するSiCl4含有ガス中や
浸珪処理雰囲気中に水分や酸素を添加する方法を実施す
ることもできる。In order to control the oxygen equivalent in the SiCl 4 -containing gas in the method of the present invention, it is simplest to add siloxane to the SiCl 4 -containing gas and adjust the content as described above. Although it is advantageous in that the decarburization reaction of the steel sheet can be directly and easily controlled, it is possible to control the concentration of SiCl 4 containing gas supplied into the furnace together with or instead of the addition of such siloxane and the control of its concentration. A method of adding moisture or oxygen to the atmosphere for the siliconizing treatment can also be performed.
【0025】また、浸珪処理炉に導入されるSiCl4
にシロキサンを添加する方法としては、シロキサンの液
体をガス化し、これをSiCl4ガスまたはSiCl4
含有ガス(SiCl4ガス+キャリアガス)に添加する
こともできるが、浸珪処理炉から排出された未反応Si
Cl4を回収する工程では不可避的にシロキサンが生成
することから、このシロキサンを利用するのが最も簡便
である。すなわち、浸珪処理設備では浸珪処理炉から排
出された未反応SiCl4を含む排ガスはSiCl4回
収設備に導かれ、ここで未反応のSiCl4が液体とし
て凝縮回収されるが、この回収過程においてSiCl4
と排ガス中に含まれる水分や酸素とが反応してシロキサ
ンが不可避的に生成する。したがって、このようなシロ
キサンを含む回収SiCl4を原料ガスの少なくとも一
部として再利用することにより、浸珪処理炉にシロキサ
ンを含むSiCl4含有ガスを供給することができる。Further, SiCl 4 introduced into a siliconizing furnace is used.
As a method of adding siloxane to a gas, a siloxane liquid is gasified, and this is converted to SiCl 4 gas or SiCl 4.
Although it can be added to the contained gas (SiCl 4 gas + carrier gas), unreacted Si discharged from the siliconizing furnace is
Since siloxane is inevitably generated in the step of recovering Cl 4 , it is most convenient to use this siloxane. That is, in the siliconizing treatment equipment exhaust gas containing unreacted SiCl 4 discharged from siliconizing treatment furnace is guided to SiCl 4 recovery facility, where it SiCl 4 unreacted is condensed recovered as a liquid, the recovery process In SiCl 4
Reacts with water and oxygen contained in the exhaust gas to inevitably produce siloxane. Therefore, by recycling such recovered SiCl 4 containing siloxane as at least a part of the source gas, it is possible to supply the SiCl 4 -containing gas containing siloxane to the siliconizing furnace.
【0026】図2及び図3は、上記のようにSiCl4
回収設備で生成したシロキサンを利用してSiCl4含
有ガス中の酸素当量を制御するようにした原料ガス回収
・供給系の設備例を示している。図2において、1は浸
珪処理炉、2は浸珪処理炉1から排出された排ガスを受
入れ、排出ガス中の未反応SiCl4を液体として回収
するためのSiCl4回収設備(この設備内の回収工程
でシロキサンが不可避的に生じる)、3はこのSiCl
4回収設備2で回収されたSiCl4と同回収工程中に
生成したシロキサンの混合液を貯蔵するための回収タン
ク、4はSiCl4の原液タンク、5は前記回収タンク
3からSiCl4+シロキサン液を、また前記原液タン
ク4からSiCl4原液をそれぞれ受け入れ、この原料
液を蒸発させて原料ガスを発生させるための蒸発槽であ
る。FIG. 2 and FIG. 3 show that SiCl 4
3 shows an example of a source gas recovery / supply system in which the oxygen equivalent in a SiCl 4 -containing gas is controlled using siloxane generated in the recovery facility. In FIG. 2, reference numeral 1 denotes a silicon-silica treatment furnace, and 2 denotes an SiCl 4 recovery facility for receiving exhaust gas discharged from the silicon-silica treatment furnace 1 and recovering unreacted SiCl 4 in the exhaust gas as a liquid. In the recovery step, siloxane is inevitably generated).
4 A recovery tank for storing a mixed solution of SiCl 4 recovered in the recovery facility 2 and siloxane generated during the recovery process, 4 is a stock solution tank of SiCl 4 , 5 is a SiCl 4 + siloxane solution from the recovery tank 3 And an evaporating tank for receiving a SiCl 4 stock solution from the stock solution tank 4 and evaporating the stock solution to generate a stock gas.
【0027】前記SiCl4回収設備2と前記回収タン
ク3との間はポンプ7を有する液供給管6で連絡され、
また、前記回収タンク3と前記蒸発槽5との間はポンプ
9と流量調整弁10を有する液供給管8で連絡され、ま
た、前記原液タンク4と前記蒸発槽5との間はポンプ1
2と流量調整弁13を有する液供給管11で連絡され、
さらに、前記蒸発槽5と浸珪処理炉1は流量調整弁15
を有するガス供給管14で連絡されている。前記回収タ
ンク3と蒸発槽5には、液中のシロキサン濃度を分析測
定するためのガスクロマトグラフィ16,17がそれぞ
れ配置されている。また、蒸発槽5は槽内部の液中に浸
漬した発熱体18を有し、この発熱体18による加熱で
原料液を蒸発させることにより原料ガスを発生させる。A liquid supply pipe 6 having a pump 7 is connected between the SiCl 4 recovery equipment 2 and the recovery tank 3,
A pump 9 and a liquid supply pipe 8 having a flow control valve 10 are connected between the recovery tank 3 and the evaporating tank 5, and a pump 1 is connected between the undiluted liquid tank 4 and the evaporating tank 5.
2 and a liquid supply pipe 11 having a flow control valve 13,
Further, the evaporating tank 5 and the siliconizing furnace 1 are provided with a flow control valve 15.
Are connected by a gas supply pipe 14 having Gas chromatography 16 and 17 for analyzing and measuring the siloxane concentration in the liquid are arranged in the recovery tank 3 and the evaporating tank 5, respectively. Further, the evaporating tank 5 has a heating element 18 immersed in a liquid inside the tank, and a raw material gas is generated by evaporating the raw material liquid by heating by the heating element 18.
【0028】この図2に示す設備によれば、浸珪処理炉
1から排出された未反応SiCl4を含む排ガスがSi
Cl4回収設備2に導かれ、ここで未反応のSiCl4
が液体として凝縮回収されるが、この回収過程において
SiCl4と排ガス中に含まれる水分や酸素とが反応し
てシロキサンが不可避的に生成する。したがって、回収
されるSiCl4液中にはシロキサンが含まれる。この
回収されたSiCl4+シロキサン液は液供給管6を通
じて貯蔵用の回収タンク3に送られ、さらに、液供給管
8を通じて蒸発槽5に送られる。また、原液タンク4の
SiCl4原液も液供給管11を通じて蒸発槽5に送ら
れる。According to the equipment shown in FIG. 2, the exhaust gas containing unreacted SiCl 4 discharged from the silicon
It is led to the Cl 4 recovery facility 2 where the unreacted SiCl 4
Is condensed and recovered as a liquid. In this recovery process, SiCl 4 reacts with moisture and oxygen contained in the exhaust gas to inevitably generate siloxane. Therefore, the recovered SiCl 4 liquid contains siloxane. The recovered SiCl 4 + siloxane liquid is sent to the recovery tank 3 for storage through the liquid supply pipe 6, and further sent to the evaporation tank 5 through the liquid supply pipe 8. The SiCl 4 stock solution in the stock solution tank 4 is also sent to the evaporation tank 5 through the liquid supply pipe 11.
【0029】回収タンク3と蒸発槽5ではガスクロマト
グラフィ16,17によりSiCl 4+シロキサン液中
のシロキサン濃度が随時監視され、蒸発槽5で必要とさ
れるシロキサン濃度(すなわち、浸珪処理炉1で必要と
されるSiCl4含有ガス中の酸素濃度)に応じて液供
給管8,11の流量調整弁10,13の開度が制御さ
れ、蒸発槽5に送られるSiCl4+シロキサン液、S
iCl4原液の量が調整される。In the recovery tank 3 and the evaporating tank 5, gas chromatography is performed.
According to graphs 16 and 17, SiCl 4+ In siloxane liquid
The siloxane concentration is monitored from time to time,
Siloxane concentration (that is, required
SiCl4Liquid supply according to the oxygen concentration in the contained gas).
The opening of the flow control valves 10, 13 of the supply pipes 8, 11 is controlled.
SiCl which is sent to the evaporation tank 54+ Siloxane solution, S
iCl4The amount of stock solution is adjusted.
【0030】蒸発槽5では発熱体18で加熱することに
より原料液を蒸発させ、シロキサンを含むSiCl4ガ
ス(原料ガス)が発生する。なお、蒸発槽5では原料ガ
ス供給量に応じて発熱体18の加熱による原料液の蒸発
量が制御される。原料ガスは流量調整弁15で流量調整
されつつ、ガス供給管14を通じて浸珪処理炉1側に供
給される。In the evaporating tank 5, the raw material liquid is evaporated by heating with the heating element 18, and SiCl 4 gas (raw gas) containing siloxane is generated. In the evaporating tank 5, the amount of evaporation of the raw material liquid by heating the heating element 18 is controlled according to the amount of raw material gas supplied. The raw material gas is supplied to the siliconizing furnace 1 through the gas supply pipe 14 while the flow rate is adjusted by the flow control valve 15.
【0031】前記ガス供給管14により浸珪処理炉1に
供給される原料ガスには、前記流量調整弁15の下流側
でキャリアガスが混合される。そして、この混合ガス
(処理ガス)は浸珪処理炉1に導入される前段階で適当
な加熱手段(例えば、ガスノズル部内に設置されたヒー
タ)により加熱された後、浸珪処理炉1に導入される。
また、浸珪処理炉1内の酸素及び水分量が連続測定器に
より常時測定されるとともに、浸珪処理後の鋼板から定
期的にサンプルを採取して鋼板の脱炭量が測定され、こ
れらのデータに基づいて蒸発槽5内のSiCl4+シロ
キサン液中のシロキサン濃度が決定され、ガスクロマト
グラフィ17により測定されるシロキサン濃度がその値
となるように、上述のように液供給管8,11の流量調
整弁10,13の開度調整により蒸発槽5に供給される
SiCl4+シロキサン溶液、SiCl4原液の量が調
整される。The carrier gas is mixed with the raw material gas supplied to the siliconizing furnace 1 through the gas supply pipe 14 on the downstream side of the flow control valve 15. The mixed gas (processing gas) is heated by a suitable heating means (for example, a heater installed in a gas nozzle) at a stage before being introduced into the siliconizing furnace 1, and then introduced into the siliconizing furnace 1. Is done.
In addition, the oxygen and moisture contents in the siliconizing furnace 1 are constantly measured by a continuous measuring device, and samples are periodically taken from the steel sheet after the siliconizing treatment to measure the decarburization amount of the steel sheet. Based on the data, the siloxane concentration in the SiCl 4 + siloxane solution in the evaporation tank 5 is determined, and the liquid supply pipes 8 and 11 are set as described above so that the siloxane concentration measured by the gas chromatography 17 becomes the value. The amounts of the SiCl 4 + siloxane solution and the undiluted SiCl 4 solution supplied to the evaporation tank 5 are adjusted by adjusting the opening degrees of the flow control valves 10 and 13.
【0032】図3は他の設備例を示すもので、浸珪処理
炉1、浸珪処理炉1から排出された排ガスを受入れ、排
出ガス中の未反応SiCl4を液体として回収するため
のSiCl4回収設備2、このSiCl4回収設備2で
回収されたSiCl4と同回収工程中に生成したシロキ
サンの混合液を貯蔵するための回収タンク3、SiCl
4の原液タンク4等を有する点は図2に示す設備と同様
であるが、この設備では原液タンク4からSiCl4原
液を受け入れる蒸発槽5aと、回収タンク3からSiC
l4+シロキサン液を受け入れる蒸発槽5bとをそれぞ
れ別々に設け、これら蒸発槽5a,5bで発生した各原
料ガスの割合を調整しつつ、浸珪処理炉1に供給するよ
うにしたものである。FIG. 3 shows another example of the equipment, in which the silicidation furnace 1 receives the exhaust gas discharged from the silicification furnace 1 and recovers the unreacted SiCl 4 in the exhaust gas as a liquid. 4 recovery equipment 2, a recovery tank 3 for storing a mixture of SiCl 4 recovered by the SiCl 4 recovery equipment 2 and siloxane generated during the recovery step, SiCl
4 is similar to the equipment shown in FIG. 2 except that an evaporating tank 5 a for receiving the SiCl 4 undiluted solution from the undiluted liquid tank 4 and a SiC
An evaporating tank 5b for receiving the l 4 + siloxane liquid is separately provided, and is supplied to the siliconizing furnace 1 while adjusting the ratio of each source gas generated in the evaporating tanks 5a and 5b. .
【0033】前記SiCl4回収設備2と前記回収タン
ク3との間はポンプ7を有する液供給管6で連絡され、
また、前記回収タンク3と前記蒸発槽5bとの間はポン
プ9を有する液供給管8で連絡され、また、前記原液タ
ンク4と前記蒸発槽5aとの間はポンプ12を有する液
供給管11で連絡されている。さらに、前記蒸発槽5
a,5bと浸珪処理炉1との間はガス供給管14で連絡
されているが、このガス供給管14は、流量調整弁15
a,15bを有し、各蒸発槽5a,5bに付随した支管
14a,14bとこれらが合流した本管14cとからな
っている。A liquid supply pipe 6 having a pump 7 is connected between the SiCl 4 recovery equipment 2 and the recovery tank 3,
A liquid supply pipe 8 having a pump 9 is connected between the recovery tank 3 and the evaporation tank 5b, and a liquid supply pipe 11 having a pump 12 is provided between the stock solution tank 4 and the evaporation tank 5a. Has been contacted. Further, the evaporating tank 5
a, 5b and the siliconizing furnace 1 are connected by a gas supply pipe 14, which is connected to a flow control valve 15;
a and 15b, each of which is composed of branch pipes 14a and 14b attached to each of the evaporation tanks 5a and 5b, and a main pipe 14c where these pipes merge.
【0034】前記蒸発槽5bには、液中のシロキサン濃
度を分析測定するためのガスクロマトグラフィ19が配
置されている。また、各蒸発槽5a,5bは槽内部の液
中に浸漬した発熱体18a,18bを有し、この発熱体
18a,18bによる加熱で原料液を蒸発させることに
より原料ガスを発生させる。A gas chromatography 19 for analyzing and measuring the siloxane concentration in the liquid is disposed in the evaporating tank 5b. Each of the evaporation tanks 5a and 5b has heating elements 18a and 18b immersed in the liquid inside the tanks, and generates a source gas by evaporating the source liquid by heating by the heating elements 18a and 18b.
【0035】この図3に示す設備によれば、図2に示す
設備と同様に、浸珪処理炉1から排出された未反応Si
Cl4を含む排ガスからSiCl4回収設備2において
SiCl4が液体として凝縮回収される。そして、この
回収過程で生じたシロキサンを含むSiCl4+シロキ
サン液が液供給管6を通じて貯蔵用の回収タンク3に送
られ、さらに、液供給管8を通じて蒸発槽5bに送られ
る。また、原液タンク4のSiCl4原液は液供給管1
1を通じて蒸発槽5aに送られる。According to the equipment shown in FIG. 3, similarly to the equipment shown in FIG.
SiCl 4 is condensed recovered as a liquid in the SiCl 4 recovery facility 2 from exhaust gas containing Cl 4. Then, the SiCl 4 + siloxane liquid containing siloxane generated in the recovery process is sent to the recovery tank 3 for storage through the liquid supply pipe 6, and further sent to the evaporation tank 5 b through the liquid supply pipe 8. Further, the SiCl 4 stock solution in the stock solution tank 4
1 to the evaporating tank 5a.
【0036】蒸発槽5a,5bでは発熱体18a,18
bで加熱することにより原料液を蒸発させ、蒸発槽5a
ではSiCl4ガスが、また、蒸発槽5bではシロキサ
ンを含むSiCl4ガスが発生する。これら蒸発槽5
a,5bでは原料ガス供給量に応じて、発熱体18a,
18bの加熱による原料液の蒸発量が制御される。各蒸
発槽5a,5bで発生した原料ガスは流量調整弁15
a,15bで流量調整されつつ、ガス供給管14を通じ
て浸珪処理炉1側に供給される。In the evaporation tanks 5a and 5b, the heating elements 18a and 18
b, the raw material liquid is evaporated by heating in the evaporating tank 5a.
In this case, SiCl 4 gas is generated, and in the evaporation tank 5b, SiCl 4 gas containing siloxane is generated. These evaporation tanks 5
a, 5b, the heating elements 18a,
The amount of evaporation of the raw material liquid by heating at 18b is controlled. The raw material gas generated in each of the evaporation tanks 5a and 5b is supplied to the flow control valve 15
The gas is supplied to the siliconizing furnace 1 through the gas supply pipe 14 while the flow rate is adjusted by a and 15b.
【0037】前記ガス供給管14により浸珪処理炉1に
供給される原料ガスには、前記流量調整弁15の下流側
でキャリアガスが混合される。そして、この混合ガス
(処理ガス)は浸珪処理炉1に導入される前段階で適当
な加熱手段(例えば、ガスノズル部内に設置されたヒー
タ)により加熱された後、浸珪処理炉1に導入される。
また、浸珪処理炉1内の酸素及び水分量が連続測定器に
より常時測定されるとともに、浸珪処理後の鋼板から定
期的にサンプルを採取して脱炭量が測定され、これらの
データに基づいて浸珪処理炉1に供給すべきSiCl4
含有ガス中の酸素当量が決定され、SiCl4含有ガス
中の酸素当量がその値となるように、流量調整弁15
a,15bにより蒸発槽5aからの原料ガスと蒸発槽5
bからの原料ガスの流量比率が調整される。蒸発槽5b
ではガスクロマトグラフィ19によりSiCl4+シロ
キサン液中のシロキサン濃度が常時測定され、これが前
記原料ガスの流量比率を決めるデータとなる。The carrier gas is mixed with the raw material gas supplied to the siliconizing furnace 1 through the gas supply pipe 14 on the downstream side of the flow control valve 15. The mixed gas (processing gas) is heated by a suitable heating means (for example, a heater installed in a gas nozzle) at a stage before being introduced into the siliconizing furnace 1, and then introduced into the siliconizing furnace 1. Is done.
In addition, the oxygen and moisture contents in the siliconizing furnace 1 are constantly measured by a continuous measuring device, and samples are periodically collected from the steel sheet after the siliconizing treatment to measure the decarburization amount. SiCl 4 to be supplied to the siliconizing furnace 1 based on
The oxygen equivalent in the contained gas is determined, and the flow control valve 15 is adjusted so that the oxygen equivalent in the SiCl 4 -containing gas becomes the value.
The raw material gas from the evaporation tank 5a and the evaporation tank 5
The flow ratio of the source gas from b is adjusted. Evaporation tank 5b
In, the siloxane concentration in the SiCl 4 + siloxane solution is constantly measured by the gas chromatography 19, and this is data for determining the flow rate ratio of the source gas.
【0038】本発明法では、必要とされる脱炭量に応じ
て母材鋼板のC含有量を浸珪処理後の鋼板の目標C含有
量よりも高くしておくものであるが、浸珪処理後の高珪
素鋼板のC含有量が20〜50ppmとなるよう、浸珪
反応時の母材鋼板の脱炭量を制御することが好ましい。
浸珪処理後の高珪素鋼板のC含有量が50ppmを超え
ると、製品鋼板の鉄損特性が著しく劣化するため好まし
くない。一方、C含有量が20ppm未満では浸珪処理
雰囲気中の酸素及び水分の過剰によって鋼板表層でのシ
リカの発生を抑止する効果が無くなり、このため鋼板の
表面性状を劣化させるとともに、鋼板粒界の酸化による
加工性の劣化を生じてしまう。In the method of the present invention, the C content of the base steel sheet is made higher than the target C content of the steel sheet after the siliconizing treatment in accordance with the required decarburization amount. It is preferable to control the amount of decarburization of the base steel sheet during the siliconizing reaction so that the C content of the high silicon steel sheet after the treatment is 20 to 50 ppm.
If the C content of the high silicon steel sheet after the siliconizing treatment exceeds 50 ppm, the iron loss characteristics of the product steel sheet are significantly deteriorated, which is not preferable. On the other hand, when the C content is less than 20 ppm, the effect of suppressing the generation of silica on the surface layer of the steel sheet due to the excess of oxygen and moisture in the siliconizing atmosphere is lost, thus deteriorating the surface properties of the steel sheet and reducing the grain boundaries of the steel sheet. Deterioration of workability due to oxidation occurs.
【0039】なお、本発明が対象とする浸珪処理法によ
る高珪素鋼板の製造では、通常、浸珪処理炉にSiCl
4濃度が約5〜35mol%程度のSiCl4含有ガス
(SiCl4+キャリアガス)ガスが供給され、この浸
珪処理炉に導入された鋼板は1023〜1200℃程度
の処理温度で浸珪処理され、引き続き拡散均熱処理炉に
導入されて1230℃以下の処理温度で均熱処理され
る。また、製造される高珪素鋼板の珪素含有量は任意で
あるが、一般にはSi:5〜10wt%の高珪素鋼板が
製造される。In the production of high-silicon steel sheets by the siliconizing treatment method, which is the object of the present invention, SiCl
4 concentration is supplied approximately 5~35Mol% about SiCl 4 containing gas (SiCl 4 + carrier gas) gas, steel introduced into the siliconizing treatment furnace is siliconizing treatment at a processing temperature of about from 1,023 to 1,200 ° C. Then, it is introduced into a diffusion soaking furnace and soaked at a treatment temperature of 1230 ° C. or less. Further, the silicon content of the manufactured high silicon steel sheet is arbitrary, but generally, a high silicon steel sheet having Si: 5 to 10 wt% is manufactured.
【0040】[0040]
【実施例】[実施例1]本発明例として、浸珪処理炉が
図2に示すような原料ガス回収・供給系を有する浸珪処
理設備(図5に示す浸珪処理設備)において、Si含有
量:3wt%、C含有量:50ppm、板厚0.3mm
の母材鋼板を連続浸珪処理し、6.5%Si鋼板を製造
した。浸珪処理炉ではN2+SiCl4雰囲気中で12
00℃×5分の浸珪処理を行い、引き続き拡散均熱処理
炉のN2雰囲気中において、浸珪反応により鋼板表面に
添加されたSiを板厚方向に拡散させるための拡散均熱
処理を1200℃×15分の条件で行った。[Example 1] As an example of the present invention, in a siliconizing treatment facility having a source gas recovery / supply system as shown in FIG. Content: 3 wt%, C content: 50 ppm, sheet thickness 0.3 mm
Was subjected to continuous siliconizing treatment to produce a 6.5% Si steel sheet. In a siliconizing furnace, 12 in an N 2 + SiCl 4 atmosphere.
A siliconizing treatment of 00 ° C. × 5 minutes is performed, and then, in a N 2 atmosphere of a diffusion soaking furnace, a diffusion soaking treatment for diffusing Si added to the surface of the steel sheet in the thickness direction by the siliconizing reaction is performed at 1200 ° C. X 15 minutes.
【0041】また、比較例として、浸珪処理炉が図4に
示すような原料ガス回収・供給系を有する浸珪処理設備
(図5に示す浸珪処理設備)を用い、上記と同様の条件
で母材鋼板を連続浸珪処理し、6.5%Si鋼板を製造
した。ここで、図4に示す原料ガス回収・供給系では、
浸珪処理炉1から排出された未反応SiCl4を含む排
ガスからSiCl4回収設備2においてSiCl4が液
体として凝縮回収され、この回収過程で生じたシロキサ
ンを含むSiCl4液がポンプ24を備えた液供給管2
3を通じて貯蔵用の回収タンク20に送られ、さらに、
この回収タンク20からポンプ26と流量調整弁27を
備えた液供給管25を通じて原液タンク21に送られ
る。この原液タンク21内のシロキサンを含むSiCl
4液は、同タンク21からポンプ29と流量調整弁30
を備えた液供給管28を通じて蒸発槽22に送られる。
蒸発槽22では発熱体31で加熱して原料液を蒸発させ
ることによりシロキサンを含むSiCl4ガス(原料ガ
ス)が発生し、この原料ガスは流量調整弁33を備えた
ガス供給管32を通じて浸珪処理炉1に供給される。As a comparative example, the siliconizing treatment furnace used was a siliconizing treatment facility having a raw material gas recovery / supply system as shown in FIG. The base material steel plate was subjected to continuous siliconizing treatment to produce a 6.5% Si steel plate. Here, in the source gas recovery / supply system shown in FIG.
SiCl 4 was condensed and recovered as a liquid from the exhaust gas containing unreacted SiCl 4 discharged from the siliconizing furnace 1 in a SiCl 4 recovery facility 2, and a SiCl 4 liquid containing siloxane generated in the recovery process was provided with a pump 24. Liquid supply pipe 2
3 to a collection tank 20 for storage,
The liquid is sent from the recovery tank 20 to the undiluted liquid tank 21 through a liquid supply pipe 25 provided with a pump 26 and a flow control valve 27. SiCl containing siloxane in this stock solution tank 21
The four liquids are supplied from the tank 21 to the pump 29 and the flow control valve 30.
Is sent to the evaporation tank 22 through a liquid supply pipe 28 provided with
In the evaporating tank 22, SiCl 4 gas (source gas) containing siloxane is generated by evaporating the source liquid by heating with the heating element 31. The source gas is silicified through a gas supply pipe 32 provided with a flow control valve 33. It is supplied to the processing furnace 1.
【0042】本発明例では図2に示す原料ガス回収・供
給系において、浸珪処理炉内での水分量、酸素濃度に応
じて原料ガス中のシロキサン濃度を制御・管理し、浸珪
処理時の母材鋼板の脱炭量がほぼ均一になるようにし
た。一方、比較例では図4に示す原料ガス回収・供給系
を用いたため、原料ガス中のシロキサン濃度の制御・管
理は行わなかった。本発明例、比較例ともに、28日間
の操業期間中で1日目、7日目、14日目、21日目、
28日目にサンプリングした製品鋼板のC含有量、母材
鋼板の脱炭量、製品鋼板の表面性状(製品押し疵の発生
の有無)と加工性(限界曲げ半径)を表1に示す。In the example of the present invention, in the raw material gas recovery / supply system shown in FIG. 2, the siloxane concentration in the raw material gas is controlled and controlled in accordance with the water content and the oxygen concentration in the siliconizing treatment furnace. The decarburization amount of the base steel sheet was made substantially uniform. On the other hand, in the comparative example, since the source gas recovery / supply system shown in FIG. 4 was used, the control and management of the siloxane concentration in the source gas were not performed. In both the present invention example and the comparative example, the first day, the seventh day, the 14th day, the 21st day,
Table 1 shows the C content of the product steel sheet, the decarburization amount of the base steel sheet, the surface properties of the product steel sheet (whether or not product pressing flaws are generated) and the workability (critical bending radius) sampled on the 28th day.
【0043】表1によれば、原料ガス中のシロキサン濃
度の制御・管理をしていない比較例では、浸珪処理時の
鋼板の脱炭量が経時的に変化(増加)しており、14日
目以降ではシリカによる押し疵が発生している。これ
は、適正な脱炭反応を得る上で原料ガス中のシロキサン
濃度が相対的に過剰となったため、浸珪処理雰囲気中の
水分や酸素が鋼板の脱炭に十分に消費されず、その結
果、雰囲気中の水分や酸素によりシリカが発生したため
であると考えられる。また、同じく14日目以降では加
工性(限界曲げ半径)が劣化しているが、これは、原料
ガス中のシロキサン濃度が相対的に過剰となったため、
浸珪処理雰囲気中の水分や酸素が鋼板の脱炭に十分に消
費されず、その結果、雰囲気中の水分や酸素により鋼板
の粒界酸化を生じたか、或いは鋼板が過剰に脱炭された
結果、製品C量が極端に減少した(20ppm未満)た
めであると考えられる。According to Table 1, in the comparative example in which the siloxane concentration in the raw material gas was not controlled / managed, the decarburization amount of the steel sheet during the siliconizing treatment changed (increased) with time. After the day, pressing flaws due to silica have occurred. This is because the siloxane concentration in the raw material gas was relatively excessive in order to obtain a proper decarburization reaction, and the water and oxygen in the siliconizing atmosphere were not sufficiently consumed for decarburization of the steel sheet. It is considered that silica was generated by moisture and oxygen in the atmosphere. Similarly, the workability (critical bending radius) deteriorated on and after the 14th day, because the siloxane concentration in the raw material gas became relatively excessive.
Moisture and oxygen in the siliconizing atmosphere are not sufficiently consumed for decarburization of the steel sheet, resulting in grain boundary oxidation of the steel sheet due to moisture and oxygen in the atmosphere, or excessive decarburization of the steel sheet. It is considered that the amount of the product C was extremely reduced (less than 20 ppm).
【0044】これに対して本発明例の場合には、原料ガ
ス中のシロキサン濃度を浸珪処理雰囲気中の水分量や酸
素濃度の変化に応じて制御・管理しているため、全操業
期間中、浸珪処理雰囲気中の鋼板表面付近の水分や酸素
を鋼板との脱炭反応に十分に消費させ、しかも脱炭量が
23〜25ppmの範囲に適切コントロールされてい
る。このため比較例のようなシリカによる押し疵発生が
なく、しかも優れた加工性(限界曲げ半径)を有する高
珪素鋼板が安定して得られている。On the other hand, in the case of the present invention, the siloxane concentration in the raw material gas is controlled and controlled according to the change in the water content and the oxygen concentration in the siliconizing atmosphere, so that during the entire operation period, In addition, moisture and oxygen near the surface of the steel sheet in the siliconizing atmosphere are sufficiently consumed for the decarburization reaction with the steel sheet, and the decarburization amount is appropriately controlled in the range of 23 to 25 ppm. For this reason, a high silicon steel sheet having no pressing flaws due to silica as in the comparative example and having excellent workability (critical bending radius) is stably obtained.
【0045】[0045]
【表1】 [Table 1]
【0046】[実施例2]本発明例として、浸珪処理炉
が図3に示すような原料ガス回収・供給系を有する浸珪
処理設備(図5に示す浸珪処理設備)において、Si含
有量:3wt%、C含有量:80ppm、板厚0.3m
mの母材鋼板を連続浸珪処理し、6.5%Si鋼板を製
造した。浸珪処理炉ではN2+SiCl4雰囲気中で1
200℃×5分の浸珪処理を行い、引き続き拡散均熱処
理炉のN2雰囲気中において、浸珪反応により鋼板表面
に添加されたSiを板厚方向に拡散させるための拡散均
熱処理を1200℃×15分の条件で行った。[Example 2] As an example of the present invention, a silicon-containing treatment furnace having a material gas recovery / supply system as shown in FIG. Amount: 3 wt%, C content: 80 ppm, sheet thickness 0.3 m
m was continuously siliconized to produce a 6.5% Si steel sheet. In the siliconizing furnace, 1 in an N 2 + SiCl 4 atmosphere.
A siliconizing treatment at 200 ° C. for 5 minutes is performed, and then, in a N 2 atmosphere of a diffusion soaking furnace, a diffusion soaking treatment for diffusing Si added to the surface of the steel sheet by the siliconizing reaction in the thickness direction is performed at 1200 ° C. X 15 minutes.
【0047】また、比較例として、浸珪処理炉が図4に
示すような原料ガス回収・供給系を有する浸珪処理設備
(図5に示す浸珪処理設備)を用い、上記と同様の条件
で母材鋼板を連続浸珪処理し、6.5%Si鋼板を製造
した。本発明例では図3に示す原料ガス回収・供給系に
おいて、浸珪処理炉内での水分量、酸素濃度に応じて原
料ガス中のシロキサン濃度を制御・管理し、浸珪処理時
の母材鋼板の脱炭量がほぼ均一になるようにした。一
方、比較例では図4に示す原料ガス回収・供給系を用い
たため、原料ガス中のシロキサン濃度の制御・管理は行
わなかった。Further, as a comparative example, a silicon-silicon treatment furnace using a silicon-silicon treatment facility having a source gas recovery / supply system as shown in FIG. 4 (silicone treatment facility as shown in FIG. 5) was used. The base material steel plate was subjected to continuous siliconizing treatment to produce a 6.5% Si steel plate. In the example of the present invention, in the raw material gas recovery / supply system shown in FIG. 3, the siloxane concentration in the raw material gas is controlled and controlled according to the water content and the oxygen concentration in the siliconizing furnace, and the base material during the siliconizing process is controlled. The decarburization amount of the steel sheet was made almost uniform. On the other hand, in the comparative example, since the source gas recovery / supply system shown in FIG. 4 was used, the control and management of the siloxane concentration in the source gas were not performed.
【0048】本発明例、比較例ともに、28日間の操業
期間中で1日目、7日目、14日目、21日目、28日
目にサンプリングした製品鋼板のC含有量、母材鋼板の
脱炭量、製品鋼板の鉄損値と加工性(限界曲げ半径)を
表2に示す。表2によれば、原料ガス中のシロキサン濃
度の制御・管理をしていない比較例では、操業初期にお
いて脱炭量が極端に少ないため製品鋼板のC含有量が5
0ppmを超え、このため加工性(限界曲げ半径)と鉄
損が劣っている。In both the present invention example and the comparative example, the C content of the product steel sheet sampled on the first day, the seventh day, the 14th day, the 21st day, and the 28th day during the operation period of 28 days, the base steel sheet Table 2 shows the decarburization amount, iron loss value and workability (critical bending radius) of the product steel sheet. According to Table 2, in the comparative example in which the siloxane concentration in the raw material gas was not controlled and controlled, the C content of the product steel sheet was 5 because the decarburization amount was extremely small at the beginning of the operation.
Exceeding 0 ppm, which results in poor workability (critical bending radius) and iron loss.
【0049】これに対して本発明例の場合には、原料ガ
ス中のシロキサン濃度を浸珪処理雰囲気中の水分量や酸
素濃度の変化に応じて制御・管理しているため、全操業
期間中、浸珪処理雰囲気中の鋼板表面付近の水分や酸素
を鋼板との脱炭反応に十分に消費させ、しかも脱炭量が
34〜43ppmの範囲に適切コントロールされてい
る。このため比較例のような操業初期における加工性と
鉄損の劣化がなく、全操業期間中において優れた磁気特
性と加工性(限界曲げ半径)を有する高珪素鋼板が安定
して得られている。On the other hand, in the case of the present invention, since the siloxane concentration in the raw material gas is controlled and controlled in accordance with the change in the water content and the oxygen concentration in the siliconizing atmosphere, during the entire operation period. In addition, moisture and oxygen near the surface of the steel sheet in the siliconizing treatment atmosphere are sufficiently consumed for the decarburization reaction with the steel sheet, and the decarburization amount is appropriately controlled in the range of 34 to 43 ppm. Therefore, there is no deterioration in workability and iron loss in the early stage of operation as in the comparative example, and a high silicon steel sheet having excellent magnetic properties and workability (critical bending radius) during the entire operation period is stably obtained. .
【0050】[0050]
【表2】 [Table 2]
【0051】[0051]
【発明の効果】以上述べた本発明によれば、浸珪処理炉
に供給するSiCl4含有ガス中の酸素当量を制御する
ことにより、浸珪反応時の母材鋼板の脱炭量を適切に制
御することができ、このため浸珪処理時の母材鋼板の表
面付近の水分や酸素濃度を極力低減させてシリカの発生
と鋼板表面や粒界の酸化を適切に防止することができる
とともに、浸珪処理後のC含有量を所望レベルにコント
ロールすることができ、このため磁気特性が良好で且つ
表面性状と加工性に優れた高珪素鋼板を工業規模で安定
的に製造することができる。According to the present invention described above, by controlling the oxygen equivalent in the SiCl 4 -containing gas supplied to the siliconizing furnace, the amount of decarbonization of the base steel sheet during the siliconizing reaction can be appropriately controlled. It is possible to reduce the water and oxygen concentration near the surface of the base steel sheet during the siliconizing treatment as much as possible, thereby properly preventing the generation of silica and the oxidation of the steel sheet surface and grain boundaries, The C content after the siliconizing treatment can be controlled to a desired level, so that a high silicon steel sheet having good magnetic properties and excellent surface properties and workability can be stably manufactured on an industrial scale.
【0052】また、特に本願の請求項2に係る発明によ
れば、浸珪処理炉から排出された未反応SiCl4の回
収工程で不可避的に生成するシロキサンを利用してSi
Cl 4含有ガス中の酸素当量を制御するものであるた
め、原料ガス回収・供給系内においてSiCl4含有ガ
ス中の酸素当量の制御を極めて簡便に行うことができる
とともに、鋼板面に供給する原料ガスにシロキサンを介
して直接酸素を混入させるため、供給した酸素を鋼板中
のCと効率良く反応させることができ、このため鋼板の
脱炭反応をより直接的且つ容易に制御することができ
る。Further, in particular, according to the invention of claim 2 of the present application.
If unreacted SiCl discharged from the siliconizing furnace4Times
Si using siloxane generated inevitably in the collection process
Cl 4It controls the oxygen equivalent in the contained gas.
In the source gas recovery and supply system,4Contained moth
Control of oxygen equivalents in wastewater can be performed very easily
At the same time, the raw material gas supplied to the steel plate surface
To supply oxygen directly into the steel plate
Can efficiently react with C.
The decarburization reaction can be controlled more directly and easily
You.
【図1】浸珪処理炉に供給される原料ガス中の酸素当量
と母材鋼板の脱炭量との関係を示すグラフFIG. 1 is a graph showing a relationship between an oxygen equivalent in a raw material gas supplied to a siliconizing furnace and a decarburization amount of a base steel sheet.
【図2】本発明法の実施に供される原料ガス回収・供給
設備の一例を示す説明図FIG. 2 is an explanatory view showing an example of a raw material gas recovery / supply facility provided for carrying out the method of the present invention.
【図3】本発明法の実施に供される原料ガス回収・供給
設備の他の例を示す説明図FIG. 3 is an explanatory view showing another example of a source gas recovery / supply facility provided for carrying out the method of the present invention.
【図4】実施例の比較例で使用した原料ガス回収・供給
設備を示す説明図FIG. 4 is an explanatory view showing source gas recovery / supply equipment used in a comparative example of the embodiment.
【図5】鋼板の連続浸珪処理設備を示す説明図FIG. 5 is an explanatory view showing a continuous siliconizing treatment facility for a steel sheet.
1…浸珪処理炉、2…SiCl4回収設備、3…回収タ
ンク、4…原液タンク、5,5a,5b…蒸発槽、6,
8,11…液供給管、7,9,12…ポンプ、10,1
3…流量調整弁、14…ガス供給管、14a,14b…
支管、14c…本管、15,15a,15b…流量調整
弁、16,17,19…ガスクロマトグラフィ、18,
18a,18b…発熱体DESCRIPTION OF SYMBOLS 1 ... Silicitizing furnace, 2 ... SiCl 4 recovery equipment, 3 ... Recovery tank, 4 ... Undiluted solution tank, 5,5a, 5b ... Evaporation tank, 6
8, 11 ... liquid supply pipe, 7, 9, 12 ... pump, 10, 1
3 ... Flow control valve, 14 ... Gas supply pipe, 14a, 14b ...
Branch pipe, 14c: Main pipe, 15, 15a, 15b: Flow control valve, 16, 17, 19: Gas chromatography, 18,
18a, 18b ... heating element
───────────────────────────────────────────────────── フロントページの続き (72)発明者 藤田 耕一郎 東京都千代田区丸の内一丁目1番2号 日本鋼管株式会社内 (56)参考文献 特開 平8−209325(JP,A) 特開 平8−209326(JP,A) 特開 平9−176826(JP,A) 特開 平9−176825(JP,A) 特開 平6−212397(JP,A) 特開 平8−3723(JP,A) (58)調査した分野(Int.Cl.7,DB名) C23C 10/08 C21D 1/76 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Koichiro Fujita 1-1-2 Marunouchi, Chiyoda-ku, Tokyo Nippon Kokan Co., Ltd. (56) References JP-A-8-209325 (JP, A) JP-A-8 JP-A-209326 (JP, A) JP-A-9-176826 (JP, A) JP-A-9-176825 (JP, A) JP-A-6-212397 (JP, A) JP-A-8-3723 (JP, A) (58) Fields surveyed (Int. Cl. 7 , DB name) C23C 10/08 C21D 1/76
Claims (3)
を、浸珪処理炉内においてSiCl4ガスを含む雰囲気
中で浸珪処理することにより高珪素鋼板を製造する方法
であって、母材鋼板のC含有量を浸珪処理後の鋼板の目
標C含有量よりも高くしておき、浸珪処理雰囲気中に含
まれる酸素分によって母材鋼板の脱炭反応を生じさせつ
つ、母材鋼板の浸珪処理を行う方法において、 浸珪処理雰囲気中に含まれる酸素分の量に応じて浸珪処
理炉内に供給するSiCl4含有ガス中の酸素当量を調
整することにより、浸珪反応時の母材鋼板の脱炭量を制
御し、目標とするC含有量の高珪素鋼板を得ることを特
徴とする表面性状が良好で且つ加工性の優れた高珪素鋼
板の製造方法。1. A method for producing a high silicon steel sheet by subjecting a base steel sheet containing less than 4 wt% of Si to siliconizing treatment in an atmosphere containing SiCl 4 gas in a siliconizing furnace. The C content of the steel sheet is set higher than the target C content of the steel sheet after the siliconizing treatment, and the decarburization reaction of the base steel sheet is caused by the oxygen content in the atmosphere of the siliconizing treatment. In a method of performing a siliconizing treatment of a steel sheet, a siliconizing reaction is performed by adjusting an oxygen equivalent in a SiCl 4 -containing gas supplied into a siliconizing furnace according to an amount of oxygen contained in a siliconizing treatment atmosphere. A method for producing a high silicon steel sheet having good surface properties and excellent workability, comprising controlling a decarburization amount of a base steel sheet at the time of obtaining a high silicon steel sheet having a target C content.
ス中にシロキサンを含有させ、且つその含有濃度を調整
することにより、SiCl4含有ガス中の酸素当量を制
御することを特徴とする請求項1に記載の表面性状が良
好で且つ加工性の優れた高珪素鋼板の製造方法。2. The method according to claim 1, wherein the siloxane is contained in the SiCl 4 -containing gas supplied to the siliconizing furnace and the concentration of the siloxane is adjusted to control the oxygen equivalent in the SiCl 4 -containing gas. Item 4. A method for producing a high silicon steel sheet having good surface properties and excellent workability according to item 1.
0〜50ppmとなるよう、浸珪反応時の母材鋼板の脱
炭量を制御することを特徴とする請求項1または2に記
載の表面性状が良好で且つ加工性の優れた高珪素鋼板の
製造方法。3. The high silicon steel sheet after the siliconizing treatment has a C content of 3
The high-silicon steel sheet having good surface properties and excellent workability according to claim 1 or 2, wherein the amount of decarburization of the base steel sheet during the siliconizing reaction is controlled so as to be 0 to 50 ppm. Production method.
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