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JP3268741B2 - Electron beam irradiation device - Google Patents
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JP3268741B2 - Electron beam irradiation device - Google Patents

Electron beam irradiation device

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Publication number
JP3268741B2
JP3268741B2 JP22942397A JP22942397A JP3268741B2 JP 3268741 B2 JP3268741 B2 JP 3268741B2 JP 22942397 A JP22942397 A JP 22942397A JP 22942397 A JP22942397 A JP 22942397A JP 3268741 B2 JP3268741 B2 JP 3268741B2
Authority
JP
Japan
Prior art keywords
electron beam
irradiation
reflection
beam irradiation
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP22942397A
Other languages
Japanese (ja)
Other versions
JPH1164600A (en
Inventor
宏樹 末澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
Original Assignee
Sumitomo Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Priority to JP22942397A priority Critical patent/JP3268741B2/en
Publication of JPH1164600A publication Critical patent/JPH1164600A/en
Application granted granted Critical
Publication of JP3268741B2 publication Critical patent/JP3268741B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Physical Or Chemical Processes And Apparatus (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電子線照射装置に
係り、特に、厚さを有する照射物の側面や下面にも、必
要な電子線を照射することが可能な電子線照射装置に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam irradiating apparatus, and more particularly to an electron beam irradiating apparatus capable of irradiating a side or a lower surface of an object having a thickness with a required electron beam.

【0002】[0002]

【従来の技術】ポリエチレンの電子線架橋や、電子滅菌
から始まった電子照射は、適用分野の拡大と加速器の進
歩により、架橋、滅菌を初め、半導体の製造の工程や、
特殊な耐熱部材の製造等、広く用いられるようになって
いる。
2. Description of the Related Art Electron beam irradiation, which started with electron beam cross-linking and electron sterilization of polyethylene, has been expanded due to the expansion of application fields and advances in accelerators.
It is widely used for manufacturing special heat-resistant members.

【0003】電子線は、一般に一直線に進行するため、
厚さを有する照射物の場合、電子線の進行方向とある角
度以内の面は十分に照射されるが、それ以上の角度にな
ると照射量が減少していき、ある角度以上になると、全
く照射されなくなる。
Since an electron beam generally travels in a straight line,
In the case of an irradiated object having a thickness, the surface within a certain angle from the traveling direction of the electron beam is sufficiently irradiated, but when the angle is larger, the irradiation amount is reduced, and when the angle is more than a certain angle, the irradiation is completely stopped. Will not be.

【0004】従って、従来は、必要とされる照射面に応
じて、電子銃の数を増やすことが行われている。図7で
は、電子線照射装置20内に配置された照射物10の両
側面10a、10bに十分な電子線24を照射するべ
く、2台の電子銃22が使用されている。
Therefore, conventionally, the number of electron guns has been increased according to the required irradiation surface. In FIG. 7, two electron guns 22 are used to irradiate a sufficient electron beam 24 to both side surfaces 10a and 10b of the irradiation object 10 arranged in the electron beam irradiation device 20.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、照射物
10の断面形状が複雑であったり、あるいは、下面10
lを含む全面照射が必要な場合には、例えば照射物10
の上方だけでなく、下方にも更に2台以上追加して、合
計4台以上電子銃を用いる必要があり、電子線照射装置
20の寸法が大型化したり、コストが高くなるという問
題点を有していた。
However, the cross-sectional shape of the irradiation object 10 is complicated, or
1 is required, the irradiation object 10
It is necessary to use two or more electron guns in addition to not only the upper part but also the lower part, so that a total of four or more electron guns are used, and there is a problem that the size of the electron beam irradiation device 20 becomes large and the cost becomes high. Was.

【0006】一方、図8に示す如く、多方向からの照射
ができるように改良した電子銃26を用いて、電子線2
4を照射物10を囲む多方向から照射することも、原理
的には考えられるが、電子銃26の内部構造が非常に複
雑となり、実用化が困難であるだけでなく、下面照射が
必要な場合には、このような多方向照射型の電子銃であ
っても、照射物10の下方にもう1台設ける必要があ
り、合計2台必要となって、電子線照射装置20が大型
化するだけでなく、コストが高くなるという問題点を有
していた。
On the other hand, as shown in FIG. 8, an electron beam 2 is applied by using an electron gun 26 modified so as to be capable of irradiating from multiple directions.
Irradiation of the electron gun 4 from multiple directions surrounding the irradiation object 10 is conceivable in principle, but the internal structure of the electron gun 26 becomes very complicated and not only practical use is difficult but also lower surface irradiation is required. In such a case, even with such a multi-directional irradiation type electron gun, it is necessary to provide another one below the irradiation object 10, and a total of two units are required, and the electron beam irradiation device 20 becomes large. In addition, there is a problem that the cost increases.

【0007】本発明は、前記従来の問題点を解消するべ
くなされたもので、電子銃の数を増やすことなく、コン
パクト且つ簡単な構成の装置で、厚さを有する照射物の
側面や下面を照射できるようにすることを課題とする。
[0007] The present invention has to have been made to solve the conventional problems, without increasing the number of electron guns, in the apparatus of compact and simple construction, the side surface or lower surface of the irradiated object with thickness An object is to enable irradiation.

【0008】[0008]

【課題を解決するための手段】本発明は、厚さを有する
照射物に電子線を照射するための電子線照射装置におい
て、照射物の側方下方を臨む位置に、電子線を反射す
ための、断面が略3角形状の反射手段を少なくとも一
配設し、照射物の側面や下面にも、必要な電子線が照
射されるようにして、前記課題を解決したものである。
The present invention SUMMARY OF], in the electron beam irradiation apparatus for irradiating an electron beam to <br/> radiation having a thickness, at a position facing the side and below the irradiated object, the electronic At least one reflecting means having a substantially triangular cross section for reflecting lines is provided.
The above-mentioned problem is solved by arranging a pair and irradiating a required electron beam to a side surface and a lower surface of an irradiation object.

【0009】更に、前記反射手段に冷却手段を内蔵した
ものである。
Further, the cooling means is built in the reflection means.

【0010】又、前記反射手段の相対位置を調整する手
段を設けたものである。
[0010] Also, it is provided with a means for adjusting the relative position of the front Kihan morphism means.

【0011】又、前記反射手段が複数の反射面を含み、
該複数の反射面の角度を変更する手段を設けたものであ
る。
Further, the reflecting means includes a plurality of reflecting surfaces ,
A means for changing the angles of the plurality of reflecting surfaces is provided.

【0012】一般に鉛やタングステン等の高Z材料は、
電子線をよく反射する材料として知られている。本発明
は、この特性を電子線照射技術に適用し、照射物の側面
や下面を照射する。即ち、電子銃から出た電子線は、反
射材料の表面にあたり、そこで一部が反射する。そし
て、反射した電子線の一部が照射物にあたる。これによ
り、照射物の側面や下面を照射できる。
Generally, high-Z materials such as lead and tungsten are:
It is known as a material that reflects electron beams well. The present invention applies this characteristic to an electron beam irradiation technique, and irradiates the side surface and the lower surface of an irradiation object. That is, the electron beam emitted from the electron gun hits the surface of the reflective material, and a part thereof is reflected there. Then, part of the reflected electron beam hits the irradiated object. Thereby, the side surface and the lower surface of the irradiation object can be irradiated.

【0013】図1に示すような配置関係にある逆台形形
状の照射物10に対して、上面10uが、上方から照射
される電子線24の進行方向に対して垂直になるように
照射物10を設置し、鉛直方向の右側面10a、及び、
水平面に対して約60°傾いた下向きの左側面10bそ
れぞれの下方に、断面形状が略直角3角形状の反射ブロ
ック30a、30bを配置して、それぞれの反射面30
sの水平面に対する角度θを変えていったときの、上面
10uの照射量に対する、それぞれの面10a、10b
の照射量の比を測定した結果を図2に実線A(右側面1
0a)及び破線B(左側面10b)で示す。
With respect to the irradiation object 10 having an inverted trapezoidal shape having an arrangement relationship as shown in FIG. 1, the irradiation object 10 has an upper surface 10u perpendicular to the traveling direction of the electron beam 24 irradiated from above. Is installed, the right side surface 10a in the vertical direction, and
Reflection blocks 30a and 30b having a substantially triangular cross section are disposed below each of the downward left side surfaces 10b inclined at about 60 ° with respect to the horizontal plane.
s with respect to the irradiation amount of the upper surface 10u when the angle θ of the s with respect to the horizontal plane is changed.
FIG. 2 shows the result of measuring the irradiation dose ratio of the solid line A (right side 1).
0a) and a broken line B (left side surface 10b).

【0014】図1において、照射物10のサイズは、上
面10uの幅が30mm、厚さが20mm、図の左方の
下向き側面10bの水平面に対する傾斜角θはほぼ60
°であり、電子線24の幅は100mmである。又、前
反射ブロック30a、30bは、その下面30lの長さが
30mmで、その先端間の間隔を20mm、該反射ブロ
ック30a、30bの下面30lの前記照射物10の下
面10lからの距離を8mmとして、向かい合うように
配置した。
In FIG. 1, the size of the irradiation object 10 is such that the width of the upper surface 10u is 30 mm, the thickness is 20 mm, and the inclination angle θ of the left downward side surface 10b with respect to the horizontal plane is approximately 60
°, and the width of the electron beam 24 is 100 mm. Again
The reflection blocks 30a, 30b have a lower surface 30l length of 30 mm, an interval between the tip ends thereof of 20 mm, and a distance of the lower surface 30l of the reflection blocks 30a, 30b from the lower surface 10l of the irradiation object 10 to 8 mm. They were arranged facing each other.

【0015】図2において、横軸は、反射面30sが水
平面に対してなす角度θの正接(tan)であり、左端
のtan θ=0が反射ブロック30a、30bが存在しな
い場合である。
In FIG. 2, the horizontal axis is the tangent (tan) of the angle θ formed by the reflection surface 30s with respect to the horizontal plane, and tan θ = 0 at the left end is when the reflection blocks 30a and 30b do not exist.

【0016】図2より、照射物のそれぞれの面には、反
射面の最適な角度があり、特に右側面10aのtan θ=
0.5付近では、上面10uに近い照射量が得られてい
ることが分かる。
From FIG. 2, each surface of the irradiation object has an optimum angle of the reflection surface, and particularly, tan θ =
It can be seen that near 0.5, an irradiation dose close to the upper surface 10u is obtained.

【0017】本発明は、このような実験結果に基づいて
なされたものである。
The present invention has been made based on such experimental results.

【0018】[0018]

【発明の実施形態】以下図面を参照して、本発明の実施
形態を詳細に説明する。
Embodiments of the present invention will be described below in detail with reference to the drawings.

【0019】本発明の第1実施形態は、図3に示す如
く、電子線照射装置20内に配置された照射物10に対
して、その上方から電子銃22により電子線24を照射
する際に、該照射物10の斜め下方に1対の反射装置4
0a、40bを設けたものである。
According to the first embodiment of the present invention, as shown in FIG. 3, an irradiation object 10 arranged in an electron beam irradiation apparatus 20 is irradiated with an electron beam 24 from above by an electron gun 22. A pair of reflecting devices 4 obliquely below the irradiation object 10.
0a and 40b are provided.

【0020】前記反射装置40a、40bを構成する反
射ブロック42の裏面には、図4に詳細に示す如く、冷
却パイプ44が配置され、電子線照射によって生じる温
度上昇による変形が防止されている。
As shown in detail in FIG. 4, a cooling pipe 44 is disposed on the back surface of the reflection block 42 constituting the reflection devices 40a and 40b to prevent deformation due to temperature rise caused by electron beam irradiation.

【0021】又、前記反射ブロック42には、その左右
方向(矢印C方向)位置を調整するための位置調整機構
46、及び、角度を矢印D方向に調整するための角度調
整機構48が設けられており、照射物10の形状、大き
さや電子線の照射エネルギに応じて、最適な位置や角度
に調整できるようにされている。
The reflection block 42 is provided with a position adjustment mechanism 46 for adjusting the position in the left and right direction (direction of arrow C) and an angle adjustment mechanism 48 for adjusting the angle in the direction of arrow D. The position and angle of the irradiation object 10 can be adjusted to an optimum position and angle according to the irradiation energy of the electron beam.

【0022】なお、第1実施形態では、反射面の形状が
連続した凹面とされていたが、凸面や単一の平面とした
り、あるいは、図5に示す第2実施形態のように、反射
手段を2つの平面状反射板50a、50bに分け、その
間をヒンジ52でつなぎ、該ヒンジ52の位置を位置調
節機構54で矢印E方向に変えることによって、照射物
10の形状に応じて反射面の形状を変更可能とすること
もできる。
In the first embodiment, the reflecting surface is formed as a continuous concave surface. However, the reflecting surface may be formed as a convex surface or a single flat surface, or as shown in the second embodiment shown in FIG. Is divided into two planar reflectors 50a and 50b, and the two are connected by a hinge 52, and the position of the hinge 52 is changed in the direction of arrow E by a position adjusting mechanism 54, whereby the reflecting surface of the irradiation object 10 is changed. The shape may be changeable.

【0023】この第2実施形態によれば、照射物の形状
変化に対する適応性が、特に高い。
According to the second embodiment, the adaptability to the shape change of the irradiation object is particularly high.

【0024】なお、前記反射板50a、50bの表面形
状は平面でなく、凹面や凸面等の曲面とすることも可能
である。
The surface shape of the reflectors 50a and 50b is not limited to a plane, but may be a curved surface such as a concave surface or a convex surface.

【0025】又、前記実施形態においては、いずれも、
冷却パイプ44が反射ブロック42や反射板50a、5
0bの裏面に配設されていたが、冷却手段は、これに限
定されず、図6に示す第3実施形態のように、例えば反
射ブロック42内に冷却孔60を形成して、その中に水
を通しても良い。又、温度上昇が問題にならない時は、
冷却手段を省略しても良い。
In each of the above embodiments,
The cooling pipe 44 serves as the reflection block 42 and the reflection plates 50a,
0b, but the cooling means is not limited to this. For example, as in the third embodiment shown in FIG. 6, a cooling hole 60 is formed in the reflection block 42, and the cooling hole 60 is formed therein. You can also pass water. If the temperature rise is not a problem,
The cooling means may be omitted.

【0026】前記反射ブロック42や反射板50a、5
0bの材質としては、鉛やタングステンが好適である
が、反射手段の材質はこれに限定されない。
The reflection block 42 and the reflection plates 50a and 5a
The material of Ob is preferably lead or tungsten, but the material of the reflection means is not limited to this.

【0027】[0027]

【発明の効果】本発明によれば、電子銃の数を増やすこ
となく、コンパクト且つ簡単な装置を用いて、照射物の
側面や下面にも、必要な電子線を照射することが可能と
なる。
According to the present invention, it is possible to irradiate the required electron beam to the side surface and the lower surface of the irradiation object by using a compact and simple device without increasing the number of electron guns. .

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の原理を説明するための、発明者等の実
験における配置を示す断面図
FIG. 1 is a cross-sectional view showing an arrangement in an experiment by the inventors for explaining the principle of the present invention.

【図2】図1による実験結果を示す線図FIG. 2 is a diagram showing experimental results according to FIG. 1;

【図3】本発明の第1実施形態の全体構成を示す断面図FIG. 3 is a cross-sectional view showing the overall configuration of the first embodiment of the present invention.

【図4】第1実施形態の詳細構成を示す拡大断面図FIG. 4 is an enlarged sectional view showing a detailed configuration of the first embodiment.

【図5】本発明の第2実施形態で用いられる反射装置の
構成を示す断面図
FIG. 5 is a sectional view showing a configuration of a reflection device used in a second embodiment of the present invention.

【図6】同じく第3実施形態で用いられる反射装置の構
成を示す断面図
FIG. 6 is a cross-sectional view showing the configuration of a reflection device used in the third embodiment.

【図7】側面照射を行うための従来の電子線照射装置の
構成を示す断面図
FIG. 7 is a cross-sectional view showing a configuration of a conventional electron beam irradiation apparatus for performing side irradiation.

【図8】多方向から照射を行うための、考えられる電子
線照射装置の構成を示す断面図
FIG. 8 is a cross-sectional view showing a possible configuration of an electron beam irradiation apparatus for performing irradiation from multiple directions.

【符号の説明】[Explanation of symbols]

10…照射物 10a、10b…側面 10l…下面 10u…上面 20…電子線照射装置 22…電子銃 24…電子線 30a、30b、42…反射ブロック 40a、40b…反射装置 44…冷却パイプ 46、54…位置調整機構 48…角度調整機構 50a、50b…反射板 52…ヒンジ 60…冷却孔 DESCRIPTION OF SYMBOLS 10 ... Irradiated object 10a, 10b ... Side surface 10l ... Lower surface 10u ... Upper surface 20 ... Electron beam irradiation device 22 ... Electron gun 24 ... Electron beam 30a, 30b, 42 ... Reflection block 40a, 40b ... Reflection device 44 ... Cooling pipe 46, 54 ... Position adjusting mechanism 48 ... Angle adjusting mechanism 50a, 50b ... Reflector 52 ... Hinge 60 ... Cooling hole

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】厚さを有する照射物に電子線を照射するた
めの電子線照射装置において、 照射物の側方下方を臨む位置に、電子線を反射する
めの、断面が略3角形状の反射手段を少なくとも一対
設し、 照射物の側面や下面にも、必要な電子線が照射されるよ
うにしたことを特徴とする電子線照射装置。
1. An electron beam irradiation apparatus for irradiating an irradiation object having a thickness with an electron beam, wherein the electron beam is reflected at a position facing a side and a lower side of the irradiation object .
An electron beam irradiating apparatus characterized in that at least one pair of reflecting means having a substantially triangular cross section is provided for irradiating a required electron beam to a side surface and a lower surface of an irradiation object.
【請求項2】請求項1において、前記反射手段に冷却手
段が内蔵されていることを特徴とする電子線照射装置。
2. An electron beam irradiation apparatus according to claim 1, wherein a cooling means is built in said reflection means.
【請求項3】請求項1又は2において、前記反射手段の
相対位置を調整する手段が設けられていることを特徴と
する電子線照射装置。
3. The method of claim 1 or 2, before Kihan morphism means
An electron beam irradiation apparatus comprising means for adjusting a relative position .
【請求項4】請求項1において、前記反射手段が複数
反射面を含む、該複数の反射面の角度を変更する手段が
設けられていることを特徴とする電子線照射装置。
4. An electron beam irradiation apparatus according to claim 1, wherein said reflecting means includes a plurality of reflecting surfaces, and means for changing an angle of said plurality of reflecting surfaces is provided.
JP22942397A 1997-08-26 1997-08-26 Electron beam irradiation device Expired - Fee Related JP3268741B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22942397A JP3268741B2 (en) 1997-08-26 1997-08-26 Electron beam irradiation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22942397A JP3268741B2 (en) 1997-08-26 1997-08-26 Electron beam irradiation device

Publications (2)

Publication Number Publication Date
JPH1164600A JPH1164600A (en) 1999-03-05
JP3268741B2 true JP3268741B2 (en) 2002-03-25

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JP22942397A Expired - Fee Related JP3268741B2 (en) 1997-08-26 1997-08-26 Electron beam irradiation device

Country Status (1)

Country Link
JP (1) JP3268741B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101097300B1 (en) * 2005-01-08 2011-12-23 삼성모바일디스플레이주식회사 Organic electroluminescent device comprising electron showered hole injection layer, and method for preparing the same

Also Published As

Publication number Publication date
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