JP3277751B2 - Flat semiconductor device and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flat type semiconductor device having a semiconductor chip having first and second main electrodes on two opposing main surfaces, and having upper and lower main electrodes.

[0002]

2. Description of the Related Art Insulated gate transistors (hereinafter referred to as IGBTs)
Abbreviated as a voltage-switching type, which is easy to handle and has a small ON voltage due to conductivity modulation by minority carrier injection.
Etc. are widely used in the PWM control inverter. Recent market demands are toward higher capacity IGBTs . Under such circumstances, in order to increase the capacity of the IGBT, in addition to increasing the capacity of one chip, a module structure in which a plurality of chips are integrated in the same package has been adopted.

In a power device having a control electrode of a MOS (metal-oxide-semiconductor) structure such as an IGBT, an emitter electrode and a gate electrode are formed side by side on one main surface of a semiconductor chip. For this, IGBT
When the chip is incorporated in a package container, the collector electrode formed on the lower surface side can be pulled out by mounting the IGBT chip on a metal base that also functions as a radiator, but the emitter electrode and the gate electrode are separated. Must be pulled out via an external lead terminal. Therefore, in the conventional package assembly structure, an emitter and an external lead terminal for a gate are provided on the upper surface side of the package container together with the metal base, and a wire is provided between the emitter electrode and the external lead terminal, and between the gate electrode and the external lead terminal. An aluminum conducting wire having a diameter of about 300 μm was drawn out by wire bonding. By the way, in the above-mentioned conventional assembly structure, heat can be radiated from the collector side, but heat radiation from the emitter side is hardly performed, so that the current capacity is greatly limited. Also, in the case of a large current capacity, the number of bonding wires connected to the emitter electrode also increases. Particularly, in a configuration in which a plurality of IGBT chips are incorporated in the same package to form a module, the number of wires is several hundreds. However, there is a problem that the internal wiring inductance increases and a large surge occurs during the switching operation,
There are also reliability issues.

In order to solve the problems of heat dissipation and wiring inductance by the wire bonding structure,
It is considered that the IGBT chip is incorporated in a flat package like a flat semiconductor, and the emitter electrode and the collector electrode formed on the main surface are brought into surface contact with the electrode plates exposed on the upper and lower surfaces of the package, respectively, and are drawn out. Can be
However, when an IGBT is brought into contact with a gate electrode by pressing a package-side electrode plate under pressure, a pressing force is applied to the gate structure, which may cause stress, and cannot be put to practical use with a conventional flat semiconductor device.

For this reason, a portion called a collector is provided on the emitter side of a device having a MOS structure for the purpose of providing a current path and heat dissipation without forming a MOS structure.
A method of accurately arranging the contact terminal body by a positioning guide has been adopted. FIG. 5A is a plan view of the IGBT chip 1 on the emitter side, in which a collector electrode 2 having no MOS structure connected to the emitter electrode is arranged, and the contact terminal body 4 is brought into pressure contact with this portion. It has become. In addition, a gate pad 3 connected to the gate electrode for taking out a gate lead is provided. FIG.
FIG. 2B is a cross-sectional view of the contact terminal body 4 that contacts the IGBT chip 1. Collector electrode 2 of IGBT chip 1
There is a convex chip pressing portion 5 corresponding to the above. Reference numeral 6 denotes an upper pressing surface that comes into contact with the upper plate of the package. FIG. 4 is a cross-sectional view of a package on which a plurality of (two in this case) IGBT chips 1 are mounted. Between the upper plate 7 and the lower plate 8, a substrate 9, a chip 1 soldered to the substrate 9 with solder 10 from below, and a contact terminal body 4 are positioned by a positioning guide 11 from below. 1
Reference numeral 2 denotes an insulating ring fixed to the upper plate 7 and the lower plate 8 and including the IGBT chip 1. In use, good surface contact is obtained between the chip 1 and the contact terminal body 4 by applying pressure to the upper plate 7 and the lower plate 8. Note that, similarly to a normal power semiconductor device in which one wafer is a single semiconductor element, the insulating ring 12 is also annular, and the outer shape of the package is also circular.

[0006]

However, the structure shown in FIG. 4 has the following disadvantages. Breakage of IGBT chip due to unbalanced load of contact terminal. Displacement due to lifting of contact terminal body. Hereinafter, the generation mechanism will be described with reference to the drawings. FIG. 5C illustrates the behavior of the contact terminal 4 when an eccentric load is applied to the conventional contact terminal 4. FIG. 5 (c)
As shown by the dotted line in the middle, in the conventional contact terminal body 4, when an eccentric load F is applied, a rotational moment is generated with the edge of the tip pressing portion 5 as a fulcrum, and the opposite side is lifted up. A large stress concentration occurs at the portion where the edge of the chip 5 hits, and the chip 1 may be damaged. In a state where the upper plate 7 and the lower plate 8 are not pressurized or in a state where the one side is lifted, the contact terminal body 4 and the IGBT chip 1 may be separated from each other and may be shifted in the horizontal direction.

The shape of the IGBT chip is 10 to 2
They are 5mm square and their rated current is 50 ~
150A. Now, for example, a large capacity semiconductor device of the rated current 1200A, the Chitsupusaizu is manufactured in IGBT chip rated current 100A of 20mm angle, chip number to be accommodated in a single path <br/> Tsu cage is It becomes 12 pieces.
If these rectangular chips are to be accommodated in a conventional circular package using an annular insulating ring, the outer dimensions of the package become 150 mm or more in diameter, and the space utilization efficiency inside and outside the package is poor, Are also likely to be uneven, and it is difficult to manufacture a package.

In view of the above problems, an object of the present invention is to prevent the semiconductor chip from being damaged and the displacement between the chip and the contact terminal body from being caused by biasing force, vibration and shock during element transportation, and the like. Stores square chips efficiently,
Moreover, it is an object of the present invention to provide a double-sided cooling type flat semiconductor device with good heat dissipation.

[0009]

In order to achieve the above object, a semiconductor device according to the present invention comprises a semiconductor chip having first and second main electrodes on two opposing main surfaces, respectively. A contact terminal body having a convex chip pressing portion contacting the main electrode, an upper plate and a lower plate sandwiching the semiconductor chip and the contact terminal body from above and below, and fixed to the upper plate and the lower plate. In a flat semiconductor device having an insulating ring including a semiconductor chip, a line connecting the outer periphery of the chip pressing portion to a surface of the contact terminal body opposite to the surface having the chip pressing portion is projected onto the surface. It shall have a convex part more inside.

[0010] The semiconductor device may have a control electrode having a MOS structure. Further, a spring for pressing the contact terminal body against the semiconductor chip without applying pressure to the upper plate and the lower plate is provided. Further, the spring may be arranged around a convex portion of the contact terminal body, and the spring may also serve to position the contact terminal body.

Further, the insulating ring fixed to the upper plate and the lower plate of the flat type semiconductor device and including the semiconductor chip includes a straight portion and an arc-shaped corner connecting the straight portion. It is important that the radius of the arc inside the corner portion of the insulating ring is 2 mm or more, and that the corner portion of the insulating ring is thicker than the straight portion.

The center of the arc outside the corner of the insulating ring is preferably outside the center of the inside arc.
Further, a plurality of semiconductor chips can be included. As a method for manufacturing a flat semiconductor device as described above, it is important to manufacture an insulating ring by press molding and firing.

[0013]

According to the above-mentioned means, a line connecting the outer periphery of the chip pressing portion is formed on the surface of the contact terminal body opposite to the surface where the chip pressing portion is located, and a projection is formed inside the line projected on the surface. by to have, even when an imbalance occurs in the pressure, does not work and so rotational moment to the contact terminal member, also do not cause lifting of the contact terminal member for the chip, Yotsute chip edge of the chip pressing Uniform pressure contact can be achieved without concentration of stress on the surface.

Further, if there is a spring for pressing the contact terminal body against the semiconductor chip in a state where the upper plate and the lower plate are not pressed, the contact terminals do not float with respect to the chip. Even when the element is not pressurized, a constant pressure is always applied between the upper electrode and the upper electrode, and the displacement between the semiconductor chip and the contact terminal body due to transportation or the like can be reduced. .

If the spring is arranged around the convex portion of the contact terminal body, no extra space is required for the spring. If the spring also serves to position the contact terminal, the displacement between the contact terminal and the semiconductor chip can be further reduced. Further, if the insulating ring fixed to the upper plate and the lower plate of the flat type semiconductor device and including the semiconductor chip is composed of a linear portion and an arc-shaped corner portion connecting the linear portion, a rectangular semiconductor device can be obtained. A package is provided along the chip, so that wasteful space is omitted and uniform pressurization becomes possible.

The fact that the radius of the circular arc inside the corner portion of the insulating ring is 2 mm or more and that the corner portion of the insulating ring is thicker than the straight portion avoids stress concentration and deforms the insulating ring. It is a device to prevent cracking. Also, the center of the arc outside the corner of the insulating ring is
Being outside the center of the inner arc is also a device to avoid stress concentration.

Furthermore, if a plurality of semiconductor chips are included,
Various semiconductor devices can be manufactured according to the current capacity. As a method of manufacturing the flat semiconductor device as described above, if the insulating ring is manufactured by press molding and firing, a package having a height higher than that of sheet molding or the like, that is, a package for a high breakdown voltage semiconductor device can be formed.

[0018]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1A shows a plurality (two in the figure) of I
1 shows a cross-sectional view of a semiconductor device on which a GBT chip 1 is mounted.
In a package comprising a ceramic insulating ring 12 and an upper plate 7 and a lower plate 8 having a bellows portion fixed thereto,
Between the lower plate 8 and the upper plate 7 from below, the substrate 9, the chip 1 soldered to the substrate 9 with the solder 10, the contact terminal body 4, and the spring 15 inserted around the upper convex portion 14 in this order. Are accurately positioned by the positioning guide 11. The substrate 9 is positioned on the lower plate 7 of the package by means not shown.
Reference numeral 16 denotes a solder escape portion. The positioning guide 11 is the substrate 9
Is positioned by the groove 13 provided in the groove. Each contact terminal body 4 is pre-pressed in the package by the spring 15 even when the element is not pressurized. At the time of use, the chip 1 and the contact terminal 4 are applied to the upper plate 7 and the lower plate 8 by applying a pressure higher than the pre-pressurization.
To obtain good surface contact between The IGBT chip 1
The gate electrode is wire-bonded to the gate terminal 17 of the insulating ring 12 through the contact terminal body 4 and the hole of the positioning guide 11 via an insulating terminal (not shown) provided on the substrate 9. As described above, the IGBT is of the voltage drive type, and requires only a small current for the gate signal. Therefore, the gate lead may be of a wire bonding type. FIG. 1B shows an upper plate 7 of the semiconductor device shown in FIG.
FIG. The substrate 9 is placed in the insulating ring 12.
The positioning guide 11 placed in the groove 13 and the spring 15 therein can be seen, and the upper projection 14 of the contact terminal body 4 can be seen inside it. Here, the insulating ring 12 made of ceramic has a substantially rectangular shape including a linear portion and an arc-shaped corner portion connecting the linear portion, and wasteful space is greatly reduced as compared with the conventional annular shape. Although
The details will be described later.

FIG. 2A is a plan view of the contact terminal body 4, and FIG. 2B is a sectional view thereof. The contact terminal body 4 has a convex chip pressing portion 5 provided for pressing the emitter side of the IGBT chip, and an upper convex portion 14 provided on a surface facing the chip pressing portion 5. As the structure of the present contact terminal, the upper convex portion 14 is provided within a range of a line obtained by projecting a line connecting the outside of the chip pressing portion 5 to the facing surface. Since the contact terminal body 4 also serves as a current path and a cooling body, if the upper projection 14 is too narrow, a problem such as an increase in thermal resistance occurs. However, the contact terminal body 4 has an area of about 80% of the contact terminal body. Was no problem.

FIG. 2C is a view for explaining the behavior of the contact terminal when an eccentric load F is applied to the contact terminal body 4 according to the present invention. As shown in the figure, in the contact terminal body 4 of the present invention, even when an eccentric load is applied, since the upper convex portion 14 is arranged inside the chip pressing portion 5, the rotational moment as in the related art is small. It does not occur, and one side does not float as in the conventional case, stable pressurization is obtained, and damage to the chip is eliminated.

FIG. 3 shows the spring 15 used in the embodiment of FIG.
It is a perspective view of. An annular spring material having a substantially square outer shape was bent to form a spring. By assembling the spring 15 with the upper convex portion 14 of the contact terminal body 4, a constant pressure is always applied between the spring 15 and the upper plate 7 even when the element is not pressurized. Of the semiconductor chip 1 and the contact terminal body 4 can be prevented.
Although the drawing shows an example of a leaf spring, the invention is not limited to the leaf spring, but may be a coil spring or the like.

The inner and outer dimensions of the spring 15 are adjusted to the shape of the upper projection 14 of the contact terminal body 4 and the inner dimension of the positioning guide 11, respectively.
Function also as an accurate positioning means of the contact terminal body 4. As described above, the collector electrode having no MOS structure, which is provided on the emitter side of the semiconductor chip incorporated in the flat package, is connected to the common electrode plate on the package side through the contact terminal body which is in surface contact with the collector electrode. Thus, by applying pressure, the heat radiation from the common electrode plate exposed on the outer surface of the package via the contact terminal body 4 also on the emitter electrode side without applying an unreasonable pressing force to the MOS control structure of the semiconductor chip. Done. Thereby, the heat dissipation is remarkably improved together with the heat dissipation from the collector side, so that the current capacity of the semiconductor device can be increased. Further, since no bonding wire is used to connect the main electrodes, the internal inductance is also reduced. In addition, the semiconductor device can be realized in which the chip is not damaged even by the unbalanced load, and the gap between the chip and the contact terminal body does not shift.

Next, the square insulating ring 12 will be described.
Until the square insulating ring 12 was obtained, considerable trial production experiments were repeated. Generally, a ceramic sintered body is obtained by molding a ceramic powder and sintering it at a high temperature. At this time, shrinkage of 15 to 25% occurs. In an annular or tubular molded body, the shrinkage occurs almost entirely and uniformly, so that there is little deformation or cracking.

However, when there is a corner in the formed body of the rectangular ceramic frame, a difference in shrinkage due to non-uniformity of the molding density at the time of the charging of the raw material or the molding and an excessive stress are generated due to the difference in the corner. Cracking and deformation occur frequently.
In addition, cracks frequently occurred in the corners, and the deformation occurred from the corners to the sides. The important points obtained by repeating the prototype experiment are as follows. FIG.
(A) is a plan view of an insulating ring according to an embodiment of the present invention, and (b) is a view of a corner thereof.

In the corner portion of FIG. 6B, the center axis B of the outer arc is positioned outward with respect to the center axis A of the inner arc. The thickness of the corner part is made thicker than the thickness of the straight part. By doing so, a rectangular insulating ring in which shrinkage during sintering is stable and cracks and deformation do not occur can be obtained. The reason may be as follows.

(A) Since a large molding area and volume at the corner can be taken, the ceramic material at the corner is sufficiently filled at the time of molding, and the pressurizing area at the time of molding is large, so that the in-plane pressing force is large. Is considered to be stabilized and the molding density of the molded body at the corners becomes uniform. (A) Since the corner portion is thicker than the straight portion, the mechanical strength is increased, and it can withstand cracking during molding and distortion caused by firing shrinkage.

(C) Since the contact point between the outer arc portion and the straight line portion can be shifted from the extension of the line connecting the center axis of the inner arc portion and the contact point between the inner arc portion and the straight line portion. The concentration of the stress applied to the contact point between the linear portion and the arc portion can be reduced. Taking into account the above points,
An insulating ring was manufactured by the following steps. Inner frame 135 × 10
5. Outer frame 146 × 116mm (all dimensions of the straight part,
The same applies to the following). The arc at the corner of the mold had an inner radius of curvature of 13 mm, an outer radius of curvature of 17 mm, and the center axis of the outer arc was located 1.5 mm outside the center axis of the inner arc.

Using the mold, a hydraulic press is used to
Put 96% alumina ceramic forming raw material powder, a molding pressure of 700~1000kg / cm ^2, the height of the molded article 2
It was formed to have a thickness of 0 mm. After molding, a hole for a gate terminal was drilled on the side surface of the molded body. According to the press molding method, a molded body having a height higher than other sheet molding methods, that is, a molded body suitable for a package for a high-voltage semiconductor can be easily manufactured.

The formed insulating ring was formed using a mold under the same conditions as described above, and was 146 × 116 mm and had a height of 5 mm.
Was placed on a plate of the molded product. Further, these were placed on a refractory base plate and fired at 1550-1650 ° C. The dimensions after firing were 108 × 84 mm inside, 117 × 93 mm outside, height 16, the radius of curvature of the inside arc was 10.5 mm, and the outside radius of curvature was 13.5 mm.

The sintered body of the insulating ring was immersed in a solvent containing a coloring material, and cracks were observed at each corner, but no cracks were observed. There was no noticeable deformation. In this way, it is possible to form and sinter an insulating ring without cracking or deformation, and to manufacture a rectangular ceramic package. In addition, the above-mentioned insulating ring is for a package accommodating 12 IGBT chips of 20 mm square. Conventionally, in a circular package used to accommodate twelve 20 mm square IGBT chips, the inner diameter of the insulating ring is 1 mm.
Compared to 30 mm, the size was greatly reduced.

Hereinafter, a method of assembling a package and an assembling process will be described with reference to cross-sectional views of the semiconductor device according to the embodiment of the present invention shown in FIGS. The method will be described. A glassy glaze is applied to the outer surface of the insulating ring 12 of alumina ceramics,
It was baked at 350-1500C. Further, a Mo-Mn powder paste is applied to the end surface of the insulating ring 12 by screen printing, and a hole for the gate terminal 17 is applied by brush coating.
They were baked at 1400-1550 ° C in humidified hydrogen.
Thereafter, nickel plating was performed to form a strong metal layer on both end surfaces of the insulating ring 12 and the hole for the gate terminal 17.

On one of the end faces of the insulating ring 12 subjected to the conductive treatment, a square copper lower plate 8 is passed through an aperture plate 25 having a squeezed structure, and then 780 to 830 with a silver brazing material.
The brazing was performed in a non-oxidizing atmosphere at a temperature of ° C. At the same time,
The other end face of the insulating ring 12 is a welded plate 21 made of a Fe-Ni alloy.
And a gate terminal 17 of an Fe—Ni—Co alloy was brazed into a hole for the gate terminal.

A gate liner 18 having a conductor at the upper end of an insulator is provided around the Mo substrate 9, and 12 IGBT chips 1 of 20 mm square are arranged on the substrate 9, 3 × 4 in length and width.
The gate pads on the IGBT chip 1 and the gate liner 18 are connected by aluminum wires 22. This I
The substrate 9 on which the GBT chip 1 is disposed is housed in a square insulating ring 12 to which the lower plate 8 and the like are brazed, and a gate liner 18 is provided.
Between the gate liner 18 and the gate terminal 17
The connection is made by the gate line 19 of the g line.

As shown in FIG. 7A, a contact terminal 4 for connecting to the upper plate 7 is placed on each IGBT chip 1, and an Fe-N
Via an i-alloy drawing plate 24, a rectangular copper upper plate 7 around which a welding plate 20 of an Fe-Ni alloy is brazed is covered,
Welded plate 2 of Fe—Ni alloy brazed to insulating ring 12
1 and the welding end of the welding plate 20 are welded.

In this way, a large-capacity IGBT element having a rated current of 1200 A was packaged in a package having a square insulating ring. Compared with a conventional annular insulating ring package, the outer shape can be reduced, a large package is not required, and unnecessary space inside and outside the package can be significantly reduced. In addition, since the chips in the package are arranged uniformly, a plurality of chips are uniformly pressed, and problems such as poor contact and uneven load do not occur.

According to the present invention, the rated current can be arbitrarily set according to the number of semiconductor chips. For example, FIGS. 8A to 8G show examples of arrangement in semiconductor devices of various capacities accommodating 1, 2, 4, 6, 9, 12, and 16 rectangular semiconductor chips. 1 is an IGBT chip, 9 is a substrate, and 12 is an insulating ring. In this manner, one 20 mm square IGBT chip having a rated current of 100 A is a 100 A element, two is 200 A, and four is 400 A, etc.
By arranging one or more silicon chips 1, a series of large-capacity elements can be obtained.

Here, in particular, a silicon chip of 20 mm square
An experiment conducted to fabricate a ceramics package that accommodates sheets is described. An inner frame 28 × 28 mm, an outer frame 32 × 32 mm, a mold for pressure molding, wherein the arc of the corner of the mold has an inner radius of curvature of 1.5 mm, an outer radius of curvature of 5 mm, and an inner radius of curvature of 2 mm 5.5 outer radius of curvature
mm, two types were manufactured. With hydraulic press,
In the same manner as in the above example, 90-96% alumina ceramic raw material powder was charged, and a molding pressure of 700-1000 kg /
It was formed by a hydraulic press so that the height of the formed body was 20 mm in cm ² , and then sintered at 1550 to 1650 ° C.

As a result, in the case where the inside radius of curvature of the arc at the corner at the time of forming the insulating ring was 1.5 mm, many cracks and deformations occurred at the corner. When the inner radius of curvature was 2 mm, some deformation was recognized, but no crack was generated. Furthermore, as a result of repeated experiments, it was found that when the radius of curvature of the inner arc was less than 2 mm, a difference in molding density and stress concentration occurred at corners, and cracks and deformation were likely to occur.
Therefore, the following third point was obtained.

The radius of curvature of the arc inside the corner is 2
mm or more. Based on this point, an insulating ring with an inner radius of curvature of a circular arc at the corner of 2 mm was manufactured, and in the same manner as the above manufacturing method, a glaze, formation of a metal layer, brazing of a copper electrode, etc. were performed, and a silicon chip was formed. Was made into a rectangular package for storing one sheet. In the above embodiment, as shown in FIG. 9, one or several folds 26 may be provided in order to improve the withstand voltage at the outer periphery of the ceramic package, as in the case of the conventional circular flat ceramic package. Can be done. Also it goes without saying that as possible out to use a colored alumina ceramics not glazed.

[0040]

As described above, according to the present invention, a plurality of semiconductor chips are incorporated in a flat package and are brought into surface contact without applying an unduly high pressure to the MOS control electrode structure of the semiconductor chip. In addition to achieving uniform pressurized contact due to heat dissipation from both sides of the semiconductor chip, the current capacity can be greatly increased, and since no bonding wire is used to draw current from the main electrode,
The internal wiring inductance is reduced, and the reliability of the semiconductor element can be significantly improved by combining with a flat package having a hermetic seal structure. In addition, even when an uneven load is applied to the element, a stable pressurized structure can be achieved without damaging the chip. Each of them does not become free and is always in a pre-pressurized state, so that reliability can be improved.

Also for the flat package, the inner radius of curvature of the arc at the corner of the insulating ring of ceramics is 2 mm or more, the center axis of the outer arc is outside the center axis of the inner arc, and the thickness of the straight part is smaller. By increasing the thickness of the corners, the molding density during molding and the shrinkage rate during firing are made uniform, stress is reduced, and the corners are not cracked or deformed by improving the strength of the corners. The package was completed.

By using the rectangular package, a flat semiconductor device containing a number of chips corresponding to various capacities can be manufactured.
This contributes to downsizing of the flat semiconductor device and further downsizing of the power converter.

[Brief description of the drawings]

1A is a cross-sectional view of a semiconductor device according to an embodiment of the present invention, and FIG.

2A is a plan view of the contact terminal body of the embodiment of FIG. 1, FIG. 2B is a cross-sectional view thereof, and FIG. 2C is an explanatory view of the behavior of the contact terminal body at the time of unbalanced load.

FIG. 3 is a perspective view of the spring of the embodiment of FIG. 1;

FIG. 4 is a sectional view of a conventional semiconductor device.

5A is a plan view of an IGBT chip, FIG. 5B is a cross-sectional view of a conventional contact terminal body, and FIG. 5C is a view for explaining the behavior of the conventional contact terminal body when the load is unbalanced.

FIG. 6A is a plan view of an insulating ring according to the present invention,
(B) is an enlarged view of the corner

FIG. 7A is a cross-sectional view of another embodiment after assembly.
(B) is a plan view with the upper plate removed.

FIGS. 8A to 8G are diagrams showing examples of silicon chip arrangement.

FIG. 9 is an external view of still another embodiment.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 IGBT chip 2 Emitter collector 3 Gate pad 4 Contact terminal body 5 Chip pressing part 6 Upper pressing surface 7 Upper plate 8 Lower plate 9 Metal substrate 10 Solder 11 Positioning guide 12 Insulating ring 13 Groove 14 Upper convex part 15 Spring 16 Solder Escape 17 Gate terminal 18 Gate liner 19 Gate line 20, 21 Weld plate 22 Al wire 23 Connection line 24, 25 Squeeze plate 26 Fold

Continued on the front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 23/48 H01L 25/04 H01L 23/52

Claims (12)

(57) [Claims] A semiconductor chip having first and second main electrodes on two opposing main surfaces, and a contact terminal body having a convex chip pressing portion in contact with the first main electrode; A chip comprising an upper plate and a lower plate sandwiching the semiconductor chip and the contact terminal body from above and below, and an insulating ring fixed to the upper plate and the lower plate and including the semiconductor chip. A flat semiconductor device comprising: a surface opposed to a surface having a portion, having a projection inward of a line connecting the outer periphery of the chip pressing portion to the surface. 2. A semiconductor device comprising a first main electrode on a first main surface of a semiconductor chip and a control electrode having a MOS (metal-oxide-semiconductor) structure, wherein the first main electrode does not have a MOS structure. The semiconductor device according to claim 1, wherein the semiconductor device is a collector electrode. 3. The flat semiconductor device according to claim 1, further comprising a spring for pressing the contact terminal body against the semiconductor chip without applying pressure to the upper plate and the lower plate. 4. The flat semiconductor device according to claim 3, wherein said spring is arranged around a convex portion of said contact terminal body. 5. The flat semiconductor device according to claim 4, wherein said spring also serves to position a contact terminal body. Wherein said insulating ring is a flat type semiconductor device according to any of claims 1 5, characterized in that it consists of an arc-shaped corner portion connecting the straight portion and a straight portion. 7. A semiconductor chip having first and second main electrodes on two opposing main surfaces, and a contact terminal body having a convex chip pressing portion in contact with the first main electrode. An upper plate and a lower plate sandwiching the semiconductor chip and the contact terminal body from above and below, and an insulating ring fixed to the upper plate and the lower plate and including the semiconductor chip, wherein the insulating ring has a linear portion. A flat-shaped semiconductor device comprising an arc-shaped corner portion connecting a straight line portion to the semiconductor device. 8. The flat semiconductor device according to claim 6, wherein the radius of the arc inside the corner of the insulating ring is 2 mm or more. 9. The flat semiconductor device according to claim 8, wherein a corner portion of said insulating ring is thicker than a straight portion. 10. The flat semiconductor device according to claim 9, wherein the center of the arc outside the corner of the insulating ring is outside the center of the inside arc. 11. The flat type semiconductor device according to claim 10, comprising a plurality of semiconductor chips. 12. The method of manufacturing a flat type semiconductor device according to any one of claims 6 to 11, characterized in that produced by press molding and firing the insulating ring.