JP3279466B2 - Semiconductor wafer processing apparatus and semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer processing apparatus used for forming a circuit on a wafer, for example, in a semiconductor manufacturing process, and more particularly to a reaction tube wall of a processing apparatus. It relates processor及beauty semi conductor elements of a semiconductor wafer adhered deposition can occur.

[0002]

2. Description of the Related Art In the manufacture of semiconductor devices, various vacuum processing apparatuses such as a CVD apparatus and an etching apparatus are used to form a circuit on a wafer.

Here, in general, in this type of vacuum processing apparatus, fine dust due to reaction by-products or the like may be generated in a reaction vessel during a wafer processing process, and when the fine dust adheres to the wafer surface. , Because it is the main cause of the reduction in the yield and equipment operation rate of the semiconductor device manufacturing process,
It is necessary to take measures to prevent this.

Conventionally, there are two methods for reducing such fine dust: (1) a method of reducing the amount of reaction by-products deposited on the wall surface of a reaction tube, and (2) a method of depositing a film that is difficult to peel off. An appropriate cleaning method has been proposed. Known techniques relating to the former include, for example, the following.

[0005] Japanese Unexamined Patent Publication No. 2-224222 discloses a known technique in which a non-reactive gas is introduced into a region where reaction by-products and the like are liable to adhere in a so-called vertical reduced-pressure vapor deposition apparatus. The effect of curtain, dilution, and cooling is to reduce adhesion of reaction by-products and the like to the wall surface.

[0006]

On the other hand, recently, a so-called single-wafer CVD apparatus has been proposed. Known techniques relating to this include, for example, the following.

[0007] In this known technique, a flat quartz reaction tube or the like is provided in a heating space formed by two parallel plate heaters, and both ends in the longitudinal direction of the reaction tube are opened. , Single-wafer CVD with metal gate valve and flange attached to its opening
An apparatus is provided.

Here, a single-wafer CV as described in the above-mentioned known technique is used.
Although it is necessary to prevent the generation of minute dust in the D device, the following problem arises when the method according to the above-described known technique is applied. This will be described in detail with reference to FIGS.

In the single-wafer CVD according to the above-mentioned known technique, an O-ring seal is used to maintain the hermeticity of a contact portion between a reaction tube and a metal gate valve flange. The heat-resistant temperature of the O-ring is about 200 to 300 ° C. in the state of the art. Therefore, usually, this portion is cooled (for example, liquid-cooled by a refrigerant) so that the temperature of the seal portion does not become high. Therefore, the temperature of the region near the opening of the reaction tube becomes lower than that of the central portion of the reaction tube. FIG. 10 shows the measurement results of the temperature distribution on the wall surface of the reaction tube.

FIG. 10 shows a single-wafer CVD apparatus having a structure similar to the above-mentioned known technique, in which a wafer having a length of 200 mm is arranged in an area at a distance of 200 mm to 400 mm from a gas inflow side, and a wafer area set temperature is 600 mm. ° C, 750 ° C, 8
It is the result of having measured wall surface temperature distribution about three cases of 00 degreeC. The horizontal axis represents the distance from the gas inlet side of the reaction tube,
The vertical axis represents the reaction tube wall surface temperature. As shown in the figure, the wall surface temperature near the opening of the reaction tube is lower than that at the center of the reaction tube.

Measurement results of the deposition rate distribution of reaction by-products on the wall of a reaction tube when a film forming gas is flowed from one direction of the reaction tube under the above temperature distribution to form a thin film on a wafer. Is shown in FIG. FIG. 11 shows a reaction tube pressure of 200 Pa.
And the results for the two cases of 100 Pa, and the vertical axis represents the dimensionless deposition rate.

In FIG. 11, at the opening on the gas inflow side, the deposition rate is low due to the low temperature, but the thermal decomposition of the film forming gas progresses gradually and the deposition rate increases.
The value becomes substantially constant in the wafer area, and the deposition rate gradually decreases toward the opening on the exhaust side. However, there is a region where the deposition rate is increased again in the low-temperature part (around 530 mm to 600 mm from the gas inflow side) due to the reaction by-product generated in the high-temperature part being transported downstream by the gas flow. . In the low-temperature deposition area, the low temperature and high deposition rate cause the reaction by-products to adhere not in the same film-like state as in the wafer area but in the form of glass fragments that are easily peeled and scattered. I knew I was doing it.

As shown in FIG. 11, the deposition rate of the reaction by-product itself is the largest in the wafer region, and the temperature in the low-temperature portion where glass shards adhere is relatively small. However, since the wafer region is at a high temperature, the film is in a film-like deposition state that is difficult to be peeled off even at a high deposition rate. It suffices if it is removed by a normal cleaning operation performed at a certain rate. In contrast, the reaction by-products attached to the low-temperature part in the form of glass shards are extremely easy to peel off,
The above-mentioned frequency of cleaning operation cannot be met. Therefore, in the case of a single-wafer CVD apparatus, it is necessary to take some other measures against the adhesion of the glassy reaction by-product to the low-temperature portion.

However, when the method for preventing the adhesion of reaction by-products according to the known technique is applied to a single-wafer CVD apparatus such as the known technique, the known technique introduces a non-reactive gas into the flow direction upstream of the wafer region. Therefore, as described above, it is not possible to sufficiently prevent adhesion to a low-temperature portion, which is the most important in a single-wafer CVD apparatus. Therefore, in this case, the reaction by-products attached to the low-temperature portion in the form of glass shards flutter or fall due to pressure fluctuations and gas flow direction fluctuations caused by switching in and out of the wafer and film formation gas, There is a possibility that dust adheres to the wafer and the operation rate and the yield are reduced.

On the other hand, in order to obtain a sufficient adhesion-preventing effect by a known technique, a large amount of non-reactive gas needs to be introduced, resulting in inefficiency and high cost. Further, since the non-reactive gas passes through the wafer region, the uniformity of the film formation on the wafer may be adversely affected.

An object of the present invention is to reduce the amount of reaction by-products deposited in a low-temperature portion without affecting the film formation of a wafer.
To provide a processing apparatus及beauty semi conductor elements of the semiconductor wafer can be efficiently reduced with less gas.

[0017]

According to a first concept of the present invention, a substantially flat reaction tube having openings at both ends in the longitudinal direction, and an opening at both ends of the reaction tube are provided. Water inside the reaction vessel equipped with a flange provided in the section
Earnestly heated housing the semiconductor wafer, by evacuating while supplying a reaction gas into said reaction vessel, said reaction
The pipe is substantially horizontal from one end in the longitudinal direction to the other end in the pipe.
An apparatus for processing a semiconductor wafer that generates a reaction gas flow in one direction, thereby performing either one of thin film formation and epitaxial growth on a wafer surface, wherein the dilution gas for diluting the reaction gas is subjected to the reaction gas. Said in the tube
The wafer is not supplied to the one end side before the wafer arrangement position in the reaction gas flow in a substantially horizontal direction from one end side to the other end side.
There is provided a semiconductor wafer processing apparatus provided with a diluent gas supply mechanism for supplying only to the other end side .

That is, in the present invention, the reaction gas
Is moved from one end in the longitudinal direction to the other end in the reaction tube.
Is generated in a substantially horizontal direction, whereby thin film formation or epitaxial growth is performed on the wafer. At this time,
For the reaction gas that has undergone such a reaction , for example, a wafer arrangement in the flow of the reaction gas is performed by a dilution gas supply mechanism having gas supply holes located near both ends of the reaction tube.
A diluent gas, for example, an inert gas such as nitrogen, is supplied only to the other end side (downstream side) of the position . Supply of this dilution gas
The supply gas dilutes the reaction gas, reduces the partial pressure of the reaction gas contributing to the deposition of the reaction by-products, and suppresses the deposition by flowing the diluent gas to protect the reaction tube wall from the reaction gas. This makes it possible to reduce the deposition rate of the reaction by-product adhering and depositing on the surface of the low temperature part of the reaction tube. As a result, the reaction by-product can be deposited in a film at a low speed.

Preferably, in the apparatus for processing a semiconductor wafer, the dilution gas supply mechanism includes gas supply holes provided at a plurality of locations near two openings provided at both ends of the reaction tube. A semiconductor wafer processing apparatus is provided.

Preferably, in the apparatus for processing a semiconductor wafer, the dilution gas supply mechanism uses an inert gas as a dilution gas.

More preferably, in the semiconductor wafer processing apparatus, the dilution gas supply mechanism uses nitrogen as an inert gas.

In order to achieve the above object, according to a second concept of the present invention, a substantially flat reaction tube having openings at both ends in the longitudinal direction, and a reaction tube provided at the openings at both ends of the reaction tube. A semiconductor wafer is housed and heated in a reaction vessel provided with a flange, and is evacuated while supplying a reaction gas into the reaction vessel, thereby performing either a thin film formation on a wafer surface or epitaxial growth. In a semiconductor wafer processing apparatus, a plurality of fins having a gas flow direction substantially in a plane direction are provided downstream of the wafer arrangement position in the reaction tube in a gas flow direction. Is provided.

As a result, the surface area of the reaction by-products deposited and deposited in the low temperature portion of the reaction tube increases, and as a result, the deposition rate of the reaction by-products deposited on the surface of the low temperature portion of the reaction tube is reduced. The reaction by-product can be deposited in a film at a low speed.

[0024]

[0025]

According to a fourth aspect of the present invention, a polysilicon film for a gate electrode wiring, a phosphorus-doped polysilicon film, an oxide film / phosphorus glass film for interlayer insulation, and Si ₃ for capacitor insulation
A semiconductor device provided with at least one of the N ₄ films, wherein the at least one film is formed using the semiconductor wafer processing apparatus.

[0027]

[0028]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a first embodiment of the present invention.
This will be described with reference to FIG. This embodiment is an embodiment of a so-called hot wall type single wafer CVD apparatus.

FIG. 1 shows the structure of the CVD apparatus according to the present embodiment.
3 to FIG. FIG. 1 is a horizontal sectional view showing the entire configuration of the CVD apparatus according to the present embodiment, FIG. 2 is a side sectional view thereof, and FIG. 3 is a diagram showing a detailed structure of a dilution gas supply hole.
FIG. 3 is a cross-sectional view taken along line III-III.

1 and 2, the hot-wall type CVD apparatus 100 is arranged with its axis substantially horizontal.
A reaction tube 2 having a flat shape with both ends open and formed of, for example, quartz, and a wafer 3 having a length of, for example, 200 mm, which is disposed substantially horizontally inside the reaction tube 2 in two upper and lower layers.
Support plates 8a, 8b on which the heaters are placed substantially horizontally, a flat heater 1 forming a heating furnace disposed above and below the reaction tube 2 with the reaction tube 2 interposed therebetween, and the reaction tube 2 heads
Metal flanges 9a and 9b coupled to both ends in the hand direction (left and right directions in FIGS. 1 and 2) , reaction tube 2 and flange 9
O-ring 1 for sealing the contact portions with a and 9b
8a, 18b, and gas supply ports 4a, 4b which are arranged in the thickness direction of the reaction tube 2 in the thickness of the flanges 9a, 9b in the direction perpendicular to the axis of the reaction tube 2 and formed from the center upward, and from the center downward, respectively. Exhaust ports 5a, 5b formed
A heat insulating material 7 provided radially outside the heater 1 so as to cover the heater 1; and gate valves 10a, 10a, 9b, 9a, 9b, which are connected to the axially outside of the flanges 9a, 9b and abut against the central openings of the flanges 9a, 9b, respectively. 10b, a plurality of dilution gas supply holes 13 provided in the wall direction of the reaction tube 2 in the circumferential direction for supplying a dilution gas, for example, N2 gas into the reaction tube 2.
a, 13b and dilution gas supply pipes 11a, 11b for introducing N2 gas into these dilution gas supply holes 13a, 13b, respectively.
11b and gas reservoirs 12a and 12b for distributing the N2 gas introduced from the dilution gas supply pipes 11a and 11b to the respective dilution gas supply holes 13a and 13b.

The heater 1 has a structure that can be divided into a plurality of parts, and each heater is used with its heat generation adjusted so that the temperature distribution of the wafer 3 (described later) becomes uniform. Further, heat insulation to the surroundings is reduced by the heat insulating material 7 provided outside the heater 1 so that power consumption can be reduced.

The support plates 8a and 8b are notched in the area where the fork 19 moves, and are provided in two upper and lower stages so that one wafer is placed on each. That is, one or two wafers 3 are processed simultaneously.

Next, the procedure of a film forming method using the CVD apparatus having the above configuration will be described. First, in a state where one gate valve 10a is opened, two wafers 3 and 3 (or one wafer 3) are placed on the opened gate valve 1a.
Oa is placed on the fork 19 and inserted horizontally into the reaction tube 2.

Next, the inserted wafer 3 is
9 and are transferred to support plates 8a and 8b, for example, arranged in a region at a distance of 200 mm to 400 mm from the gas inflow side. Thereafter, the fork 19 is pulled out, and the gate valve 10a is closed.

Then, the placed wafer 3 is heated by the heater 1, and at the same time, a film forming gas is supplied from the gas supply port 4a (or 4b , the same relationship between parentheses ). Dilution gas supply hole 13b (or 13) disposed on the side opposite to the
a) is supplied with N2 gas, and the exhaust port 5b (or 5) on the opposite side of the wafer 3 from the side to which the film forming gas is supplied.
Exhaust from a). That is, in the reaction tube 2,
From one end side in the longitudinal direction to the other end side (from the left side in FIGS. 1 and 2)
Deposition gas flow in a substantially horizontal direction (from right side or right side to left side)
And placement of the wafer 3 in the gas flow
N2 only on the downstream side from the position (the other end or one end)
Supply gas. Then, the inside of the reaction tube 2 is adjusted to a desired temperature (for example, a temperature at which the wafer region set temperature becomes 600 ° C. to 800 ° C.) and pressure, so that the film forming gas is almost parallel to the surface of the wafer 3 by a white arrow (or (A black arrow), and a thin film is formed on the surface of the wafer 3 by a thermal reaction.

When the film forming process is completed, the gate valve 10
a, the fork 19 is reinserted into the reaction tube 2 through the gate valve 10a, and the fork 1 is transferred after the wafer 3 is transferred from the support plate 8 to the fork 19.
9 is pulled out, and the wafer 3 is taken out of the reaction tube 2.

The operation in the film formation of the present embodiment as described above will be described below. The wall surface temperature distribution (that is, the gas temperature distribution) of the reaction tube 2 in the CVD apparatus 100 having the above configuration has the distribution shown in FIG. 10 as described above. That is, since the flanges 9a and 9b are cooled so as to lower the temperature of the seal portion below the heat-resistant temperature of the O-ring, the temperature near the opening of the reaction tube 2 is lower than that in the central portion in the axial direction of the reaction tube 2. Has become.

Here, in the CVD apparatus 100 of the present embodiment, when a film is formed on the wafer 3 under such a temperature distribution, the film forming gas is diluted with a diluent gas located near the both ends of the reaction tube 2. By being diluted with the N ₂ gas supplied from the supply holes 13a and 13b, the partial pressure of the film forming gas contributing to the deposition of the reaction by-products is reduced, and the N ₂ gas is removed from the film forming gas into the reaction tube 2. It flows to protect the walls and suppresses deposition. As a result, the deposition rate of the reaction by-product adhering and depositing on the surface of the low temperature portion of the reaction tube 2 (near the openings at both ends) can be reduced, and as a result, the reaction by-product can be deposited in a film at a low speed. Can be. This is shown in FIG.

FIG. 4 shows the reaction by-products on the wall surface of the reaction tube 2 when a film forming gas is flowed from one direction of the reaction tube 2 in the CVD apparatus 100 to form a thin film on the wafer 3 in the same manner as in FIG. It shows the measurement results of the deposition rate distribution of the objects, and shows the results for two cases of 200 Pa and 100 Pa in the reaction tube 2, with the non-dimensional deposition rate taken on the vertical axis.

In FIG. 4, as in FIG. 11 of the prior art, the deposition rate is low near the opening on the inflow side of the low-temperature gas (around 0 mm to 100 mm from the gas inflow side). As the decomposition progresses, the deposition rate increases, and the wafer area (a distance of 200 mm from the gas inflow side)
(Approximately 400 mm). Then, the deposition rate gradually decreases toward the opening on the exhaust side. At this time, in the conventional structure shown in FIG. 11, the reaction by-product generated in the high-temperature portion is transferred to the downstream side by the gas flow, so that the reaction by-product is generated in the low-temperature portion region near the distance of 530 mm to 600 mm from the gas inflow side. The deposition rate was increased again, and the reaction by-products were peeled off to form glass fragments that were easily scattered and adhered. However, in the CVD apparatus 100 of the present embodiment, as described above, the N ₂ gas supplied from the dilution gas supply holes 13 a and 13 b suppresses an increase in the deposition rate in the low temperature region, and as a result, the exhaust side opening is reduced. It can be seen that the deposition rate decreases almost monotonically toward the part.

Therefore, deposits do not soar or fall due to pressure fluctuations and gas flow direction fluctuations caused by taking in and out of the wafer 3 and switching of the film forming gas, thereby preventing dust from adhering to the wafer 3. As a result, it is possible to prevent a decrease in the yield and the operation rate of the apparatus.

In the first embodiment, the dilution gas supply holes 13a (or 13b) are provided at a plurality of locations on the wall surface of the reaction tube 2, but the present invention is not limited to this. That is, the reaction tube 2
The structure provided only in one place of a wall surface may be sufficient. In this case, a similar effect is obtained.

In the first embodiment, the N ₂ gas is used as an example of the inert gas. However, the present invention is not limited to this, and another gas may be used. In this case, a similar effect is obtained.

A second embodiment of the present invention will be described with reference to FIGS. This embodiment is an embodiment in which a deposit adsorbing mechanism having a large number of fins is provided as a means for reducing the deposition rate in the low temperature section. Members equivalent to those in the first embodiment are denoted by the same reference numerals. Hot wall type C according to the present embodiment
The configuration of the VD device 200 is shown in FIGS. FIG. 5 shows CV
FIG. 6 is a side cross-sectional view illustrating the configuration of the D apparatus 200, FIG. 6 is a cross-sectional view taken along the line VI-VI in FIG. 5, illustrating a detailed structure of a fin installation portion, and FIG. It is the perspective view which took out and showed only.

In FIG. 5 to FIG.
The VD apparatus 200 is different from the CVD apparatus 100 according to the first embodiment.
What is different from this is that as a means for reducing the deposition rate in the low temperature part, the dilution gas supply holes 13a and 13b and the dilution gas supply pipes 11a and
1b and gas reservoirs 12a and 12b, by-product adsorbing mechanisms 214a and 214b
Is provided. These by-product adsorption mechanisms 214a and 214b are shown in FIG.
As shown in the example a, a plurality of fins 215 having a flow direction substantially in a plane direction are provided to increase a surface area on which reaction by-products adhere and deposit. Although not shown, the by-product adsorption mechanism 214b has the same structure as the by-product adsorption mechanism 214a.

Other configurations are almost the same as those of the CVD apparatus 100 of the first embodiment.

The procedure of the film forming method using the CVD apparatus 200 having the above configuration is almost the same as the film forming procedure using the CVD apparatus of the first embodiment except that no N ₂ gas is supplied.

According to this embodiment, the by-product adsorbing mechanism 214a (or 214b) is arranged in the low temperature region where the deposition rate increases again as shown in FIG. The surface area to be deposited increases. That is, for example, when the film formation gas is supplied from the gas supply port 4a and exhausted from the exhaust port 5b to flow the film formation gas as shown by the white arrow, the film formation gas is supplied from the gas supply port 4b by the operation of the by-product adsorption mechanism 214b. When the gas is supplied and exhausted from the exhaust port 5a to flow the film forming gas as indicated by the black arrow, the by-product adsorption mechanism 214a functions to remove the reaction by-product adhering and depositing on the surface of the low-temperature portion of the reaction tube 2. Since the deposition rate can be reduced, as a result, the reaction by-product can be deposited in a film at a low speed.

Therefore, deposits do not soar or fall due to pressure fluctuations and gas flow direction fluctuations caused by taking in and out of the wafer 3 and switching of film forming gas, thereby preventing dust from adhering to the wafer 3. As a result, it is possible to prevent a decrease in the yield and the operation rate of the apparatus.

In the second embodiment, the by-product adsorbing mechanism 214a (or 214b) including the plurality of fins 215 shown in FIG. 7 is used. However, the present invention is not limited to this. That is, as shown in FIG. 8, for example, in addition to a plurality of fins 215 whose plate surface directions are substantially horizontal,
Plural fins 21 whose plate surface direction is substantially vertical
7 may be used. In this case, the same effect can be obtained.

FIGS. 9 and 11 show a third embodiment of the present invention.
This will be described below. This embodiment is an embodiment in which a member for reducing the deposition rate in the low-temperature section is not particularly provided, and the deposition rate in the low-temperature section is reduced by controlling the pressure in the reaction tube. Members equivalent to those of the first and second embodiments are denoted by the same reference numerals.

The hot wall type CVD according to the present embodiment
FIG. 9 is a side sectional view showing the configuration of the device 300. In FIG. 9, the hot-wall type CVD apparatus 300 differs from the CVD apparatus 200 of the second embodiment in that the by-product adsorption mechanisms 214a and 214b near the openings at both ends of the reaction tube 2 are removed. . Other configurations are almost the same as those of the CVD apparatus 200 of the second embodiment. That is, C
The VD apparatus 300 is not particularly provided with a member for reducing the low-temperature portion deposition rate near the opening at both ends of the reaction tube 2.

[0053] main part of this embodiment is the same as the procedure of the film formation method, lies in that control the pressure of the anti応管2. That is, the film is formed while controlling the pressure in the reaction tube 2 so that the partial pressure of the film forming gas at the time of forming the thin film on the surface of the wafer 3 becomes approximately 100 Pa or less. Other film forming procedures are almost the same as the film forming procedure of the second embodiment.

As shown in FIG. 11, the lower the pressure in the reaction tube 2 is, the more the amount of reaction by-products in the reaction tube 2 can be reduced. That is, since the flow rate can be increased, the high deposition region formed in the low temperature portion near the opening at both ends of the reaction tube 2 is shifted to the downstream side in the gas direction, and the outer region in the reaction tube 2 (for example,
In this example, the distance from the gas inflow side is 570 mm to 600 m
m) or outside the reaction tube (for example, in this example, a distance of 600 mm or more from the gas inflow side) can be formed. These results in the reaction tube 2
The deposition rate of the reaction by-product adhering and depositing on the surface of the low-temperature portion can be reduced, and the reaction by-product can be deposited in a film at a low speed. And this time, the present inventors have from the results shown in FIG. 11, the reaction tube 2 in the pressure this
In the example, it was determined that if the pressure was 100 Pa or less, a sufficient effect of lowering the deposition rate could be obtained.

Therefore, deposits do not soar or fall due to pressure fluctuations and gas flow direction fluctuations caused by taking in and out of the wafer 3 and switching of the film forming gas, thereby preventing dust from adhering to the wafer 3. It is possible to prevent a decrease in the yield and the operation rate of the apparatus.

In the first to third embodiments, the CV
Although the embodiment is the D apparatus, the invention is not limited to this, and may be applied to, for example, an epitaxial growth apparatus for performing epitaxial growth on the surface of the wafer 3. In these cases, the same effect is obtained.

Of course, of the first, second, and third embodiments described above,
At least two apparatus configurations and film forming methods may be used in combination. In these cases, the combined effects of the respective embodiments can be obtained.

Further, as another embodiment, the CVD apparatuses 100, 200, 30 of the first to third embodiments are described.
Polysilicon film, phosphorus-doped polysilicon film, oxide film / phosphorus glass film for interlayer insulating film, Si ₃ N ₄ film for capacitor insulating film, etc. By using the semiconductor device provided, it is possible to ensure good quality, that is, very little dust adheres to the wafer 3.

[0059]

According to the present invention, it is possible to reduce the deposition rate of reaction by-products adhering and depositing on the surface of the reaction tube at a low temperature, and as a result, to deposit the reaction by-products in a film at a low speed. be able to. Therefore, the deposits do not soar or fall due to pressure fluctuations or gas flow direction fluctuations caused by switching in and out of the wafers and reaction gas switching, thereby preventing dust from adhering to the wafers,
It is possible to prevent a decrease in the yield and the operation rate of the apparatus.

[Brief description of the drawings]

FIG. 1 is a horizontal sectional view illustrating an overall configuration of a CVD apparatus according to a first embodiment of the present invention.

FIG. 2 is a side sectional view of the CVD apparatus shown in FIG.

FIG. 3 is a cross-sectional view taken along the line III-III in FIG. 2;

FIG. 4 is a diagram showing a measurement result of a deposition rate distribution of a reaction by-product on a reaction tube wall when a thin film is formed in the CVD apparatus shown in FIG. 1;

FIG. 5 is a side sectional view illustrating an entire configuration of a CVD apparatus according to a second embodiment of the present invention.

FIG. 6 is a cross-sectional view taken along the line VI-VI in FIG.

FIG. 7 is a perspective view showing only a by-product adsorption mechanism shown in FIG. 6;

FIG. 8 is a perspective view illustrating a modification of the by-product adsorption mechanism.

FIG. 9 is a side sectional view illustrating a configuration of a CVD apparatus according to a third embodiment of the present invention.

FIG. 10 is a view showing a measurement result of a temperature distribution on a wall surface of a reaction tube in a CVD apparatus having a conventional structure.

FIG. 11 is a view showing a measurement result of a deposition rate distribution of a reaction by-product on a wall surface of a reaction tube when a thin film is formed in a CVD apparatus having a conventional structure.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Heater 2 Reaction tube 3 Wafer 4a, b Gas supply port 5a, b Exhaust port 7 Insulating material 8a, b Support plate 9a, b Flange 10a, b Gate valve 11a, b Diluent gas supply tube 12a, b Gas reservoir 13a, b Diluent gas supply hole 18a, b O-ring 100 CVD device 200 CVD device 214a, b By-product adsorption mechanism 215 Fin 216 By-product adsorption mechanism 217 Fin 300 CVD device

──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Hiroyo Nishiuchi 5-2-1, Josuihoncho, Kodaira-shi, Tokyo Semiconductor Company, Hitachi, Ltd. (56) References JP-A-5-166742 (JP, A) JP-A-4-100216 (JP, A) JP-A-4-136175 (JP, A) JP-A-1-286306 (JP, A) JP-A-62-244123 (JP, A) JP-A-7 -94419 (JP, A) JP-A-2-224222 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/205 C23C 16/44 C30B 25/14 H01L 21/31

Claims (6)

(57) [Claims] A semiconductor wafer is stored substantially horizontally in a reaction vessel having a substantially flat reaction tube having openings at both ends in a longitudinal direction and flanges provided at openings at both ends of the reaction tube. By heating and exhausting while supplying the reaction gas into the reaction vessel, a substantially horizontal reaction gas flow is generated from the one end in the longitudinal direction to the other end in the reaction tube, thereby forming a wafer surface. A semiconductor wafer processing apparatus for performing one of a thin film formation process and an epitaxial growth process, wherein a diluting gas for diluting the reaction gas is substantially horizontal from the one end side to the other end side in the reaction tube. And a diluting gas supply mechanism for supplying only to the other end side of the reaction gas flow in the direction, not to the one end side than the wafer arrangement position. 2. The apparatus for processing a semiconductor wafer according to claim 1, wherein the dilution gas supply mechanism includes gas supply holes provided at a plurality of locations near two openings provided at both ends of the reaction tube. An apparatus for processing a semiconductor wafer. 3. The semiconductor wafer processing apparatus according to claim 1, wherein said dilution gas supply mechanism uses an inert gas as a dilution gas. 4. A semiconductor wafer processing apparatus according to claim 3, wherein said dilution gas supply mechanism uses nitrogen as an inert gas. 5. A semiconductor wafer is housed and heated in a reaction vessel having a substantially flat reaction tube provided with openings at both ends in the longitudinal direction and flanges provided at openings at both ends of the reaction tube. In a semiconductor wafer processing apparatus for performing either one of thin film formation and epitaxial growth on a wafer surface by exhausting while supplying a reaction gas into the reaction vessel, An apparatus for processing a semiconductor wafer, comprising a plurality of fins provided on the downstream side in the flow direction with the gas flow direction substantially in the plane direction. 6. A semiconductor device having at least one of a polysilicon film of a gate electrode wiring, a phosphorus-doped polysilicon film, an oxide film / phosphorus glass film for interlayer insulation, and a Si3N4 film for capacitor insulation. The semiconductor device according to claim 1, wherein the at least one film is formed using the semiconductor wafer processing apparatus according to claim 1 or 5 .