JP3282932B2 - Semiconductor device package and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for a semiconductor device and a method of manufacturing the same, and more particularly, a lead wire is sealed in glass in a through hole formed in a metal eyelet, and a ground lead is provided. The present invention relates to a semiconductor device package in which one end surface of a bonding lead wire is bonded to the surface of the eyelet and a method of manufacturing the same.

[0002]

2. Description of the Related Art As shown in FIG. 5, a lead wire 106 is sealed in a through hole 104 formed in a metal eyelet 102 made of a metal such as iron or an alloy thereof, as shown in FIG. A so-called compression type semiconductor device package 1 in which glass is sealed by a stop glass 108 and a joining lead wire such as an earth lead 110 is joined to the surface of the eyelet 102.
00. In the semiconductor device package 100, since the eyelet 102 is usually formed of a metal having a coefficient of thermal expansion higher than that of the sealing glass 108, the airtightness of the glass-sealed through-hole 104 should be improved. Can be. Further, the sealing glass 108 and the through hole 10
In order to improve the airtightness with the inner wall surface and the heat dissipation of the eyelet, the surface of the eyelet 102 including the inner wall surface of the through hole 104 has a copper plating film 11 having good thermal conductivity.
2 are formed.

[0003] When copper plating is applied to the eyelet 102, so-called barrel plating, in which copper plating is performed while rotating a large number of objects to be plated housed in a rotating barrel immersed in a copper plating solution, is usually employed. Therefore, in order to prevent the lead wire 106 and the ground lead 110 from being bent or the like which is likely to occur during barrel plating, the eyelet 102 is previously plated with copper before the lead wire 106 or the ground lead 110 is attached. Therefore, when joining the ground lead 110 to the eyelet 102 by resistance welding, FIG.
As shown in FIG.
The resistance welding is performed while the one end faces are in contact with each other.

[0004]

The grounding lead 110 can be directly joined to the surface of the eyelet 102 by such resistance welding. However, at the time of resistance welding, the copper plating film 112 with which the earth lead 110 contacts is used.
Portion is rapidly heated and melted in a short time and scatters around, which may reduce the commercial value of the finally obtained semiconductor device package. In other words, the copper plating film that has been heated and melted and scattered to the surroundings becomes droplets and adheres to the surface of the eyelet 102. For this reason, not only does the appearance of the eyelet 102 be impaired, but also when the water-drop-shaped particles are removed from the surface of the eyelet 102, the mounted semiconductor chip, bonding wire, or the like may be short-circuited. Further, as the thickness of the copper plating film 112 increases, the hermeticity and heat dissipation of the semiconductor device package become better, but the copper plating film 112 exhibits good conductivity, so that resistance welding becomes gradually difficult. For this reason, conventionally, the copper plating film 112 has a thickness that allows resistance welding to be performed.
The thickness of the copper plating film 112 must be strictly controlled, and the thickness of the copper plating film 112 is less than 4 μm. Easily. Therefore, an object of the present invention is to provide a package for a semiconductor device capable of resistance-welding a joining lead wire to an eyelet surface without scattering a plating film and forming a plating film as thick as possible on the eyelet surface. It is to provide a manufacturing method thereof.

[0005]

Means for Solving the Problems As a result of repeated studies to achieve the above object, the present inventor has found that a copper plating film is formed on the entire surface of an eyelet, and then a copper plating film at a portion where an earth lead is joined is formed. The present inventors have found that the ground lead can be resistance-welded to the eyelet surface without scattering the copper plating film by resistance welding of the ground lead to the exposed portion where the eyelet surface is exposed by removing the lead.

That is, according to the present invention, there is provided a semiconductor device in which a lead wire is glass-sealed in a through hole formed in a metal eyelet, and one end surface of a joining lead wire is joined to the surface of the eyelet. In the device package, at least a portion where one end surface of the joining lead wire is joined
A plating film made of a metal having better thermal conductivity than the metal forming the eyelet is formed on the eyelet surface including the inner wall surface of the through hole, and the eyelet surface is exposed. To the exposed part
A semiconductor device package characterized in that one end surface of a joining lead wire is resistance-welded.

Further, according to the present invention, there is provided a semiconductor wherein a lead wire is glass-sealed in a through hole formed in a metal eyelet, and one end surface of a joining lead wire is joined to the surface of the eyelet. When manufacturing the device package, at least a portion of the eyelet surface to be joined to one end surface of the joining lead wire is exposed, and the eyelet surface including the inner wall surface of the through hole is made of metal forming the eyelet. After forming a plating film made of metal with good thermal conductivity,
A method for manufacturing a package for a semiconductor device, wherein one end surface of a joining lead wire is resistance-welded to an exposed portion where the surface of the eyelet is exposed.

[0008] In the present invention having such a configuration, eyelet exposed portion is formed on a surface of resistance welding one end surface of the junction leads to Aire' preparative table <br/> surface including the inner wall surface of the through-hole, the eyelet After forming a plating film made of a metal having better thermal conductivity than the metal forming the metal film, removing the plating film at a portion where one end surface of the joining lead wire is joined, or joining one end surface of the joining lead wire a resist was applied to the a <br/> Gillet table surface of the part, the eyelet surface including the inner wall surface of the through-hole, than the metal forming the eyelet to form a plating film thermal conductivity is made of metal having good Then, the resist can be easily obtained by removing the resist. Alternatively, after bonding the lead wire wears the mask plate eyelets surface of the side to be joined, less <br/> and the inner wall surface and the mounting surface of the semiconductor chip transmembrane hole also heat than the metal forming the eyelet By forming a plating film made of a metal having good conductivity, an eyelet having an exposed portion formed on the surface by resistance welding to one end surface of a joining lead wire can be easily obtained. Further, by forming a plating film made of copper or a copper alloy and having a thickness of 4 μm or more on the surface of the eyelet, it is possible to improve the airtightness and heat dissipation properties of the finally obtained semiconductor device package. . The removal of the plating film at the portion where one end face of the joining lead wire is joined can be easily performed by sandblasting, grinding stone, or etching.

[0009]

According to the present invention, since the eyelet surface is exposed at the portion where the joining lead wire such as the earth lead is resistance-welded, one end surface of the joining lead wire can directly contact the eyelet surface to perform resistance welding. . Therefore, the plating film is heated and melted by resistance welding to prevent water-drop-like particles from being scattered around the joining lead wire, and the commercial value of the finally obtained semiconductor device package can be maintained. . In addition, since the joining lead wire can be resistance-welded to the eyelet surface regardless of the plating film formed on the eyelet surface, a thick plating film can be formed on the eyelet surface, and the resulting semiconductor device package has characteristics such as airtightness and heat dissipation. Can be improved.

[0010]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.
FIG. 1 is a cross-sectional view of a semiconductor device package 10 according to the present embodiment, in which a lead wire 1 is inserted into a through hole 14 formed in an eyelet 12 made of iron or an iron alloy.
6 is sealed with a sealing glass 18, and a copper plating film 20 having a thickness of 4 μm or more (preferably 7 to 10 μm) is formed on substantially the entire surface of the eyelet 12 including the inner wall surface of the through hole 14. ing. This copper plating film 2
No. 0 is not formed at a portion where one end surface of the earth lead 22 which is a joining lead wire is joined, and the surface of the eyelet 12 is exposed. The exposed portion 24 from which the surface of the eyelet 12 is exposed is formed wider than one end surface of the earth lead 22 to be joined. Therefore, the ground lead 22
Is directly resistance-welded to the surface of the eyelet 12 without contacting the copper plating film 20.

The semiconductor device package 10 shown in FIG. 1 can be obtained by the manufacturing method shown in FIGS. First, the through holes 14 are formed by barrel plating or the like.
4 μm thickness on the entire surface of the eyelet 12 including the inner wall surface
The above (preferably 7 to 10 μm) copper plating film 20 is formed (FIG. 2A). Further, a resin mask member 26 having a hole 27 wider than one end surface of the earth lead 22 to be joined is attached to the surface side of the eyelet 12 to which the earth lead 22 is joined [FIG. ]. At this time, the mask member 26 is positioned so that the hole 27 is at a predetermined position where one end surface of the ground lead 22 is joined. Next, by mechanically removing the copper plating film 20 exposed from the hole 27 by sandblasting, a grinding stone, or the like,
An exposed portion 24 for joining the ground lead 22 can be formed at a predetermined position on the surface of the eyelet 12 [FIG.
(C)]. Thereafter, resistance welding is performed on the exposed portion 24 where the surface of the eyelet 12 is exposed, while directly contacting one end surface of the ground lead 22 without contacting the copper plating film 20 (FIG. 2D). In this embodiment, the copper plating film 20 exposed from the hole 27 of the mask member 26 is removed by a mechanical method such as sandblasting, but may be removed by a chemical method such as etching.

As described above, since one end of the ground lead 22 is directly contacted with the surface of the eyelet 12 and resistance-welded, the ground lead 22 can be resistance-welded without heating and melting the copper plating film 20 and scattering it. . In addition, since the ground lead 22 and the copper plating film 20 are not brought into contact during resistance welding, the ground lead 22 can be easily resistance-welded to the eyelet 12 even if the copper plating film 20 is thickened. For this reason, in the conventional method in which resistance welding is performed while one end surface of the ground lead 22 is in contact with the copper plating film, a copper plating film having a thickness of 4 μm or more cannot be formed on the surface of the eyelet 12. Became possible. As a result, the airtightness and heat dissipation properties of the finally obtained semiconductor device package can be improved.

The eyelet 12 shown in FIG. 2 (c) having an exposed portion 24 for joining the ground lead 22 at a predetermined position on the surface can also be obtained by the method shown in FIGS. 3 (a) and 3 (b). it can. First, after a resist 28 is partially applied to a predetermined position on the surface of the eyelet 12 to which one end surface of the ground lead 22 is joined [FIG.
Copper plating film 2 on the surface of the eyelet 12 including the inner wall surface
0 is formed [FIG. 3 (b)]. This copper plating film 20
Can be easily formed by a conventional plating method such as barrel plating. Next, by dissolving the resist layer 28 with a solvent or the like, the eyelet 12 shown in FIG.
Can be obtained.

The eyelet 12 shown in FIGS. 1 to 3 has a copper plating film 20 formed on the entire surface except for an exposed portion 24 to which the earth lead 22 is joined. The copper plating film 20 may be formed only on the chip mounting surface. The copper plating film 20 formed on the inner wall surface of the through hole 14 improves the adhesiveness with the sealing glass 18 used for glass sealing to improve the airtightness of the semiconductor device package. The copper plating film 20 on the chip mounting surface improves the heat dissipation of the heat generated in the semiconductor chip. Thus, the eyelet 1 having the copper plating film 20 partially formed on the surface.
2 can be obtained by the method shown in FIGS.

In this method, a mask plate 30 is mounted on the surface of the eyelet 12 to which the ground lead 22 is joined, and the side surfaces of the eyelet 12 are masked by rubber members 32,32. Thus, the mask plate 30 and the rubber member 3
The eyelets 12 with the mounting holes 2 and 32 are attached to the through holes 14.
Are open and the mounting surface of the semiconductor chip is open. One of the electrodes is connected to the eyelet 12, and partial copper plating is performed while spraying a copper plating solution toward the open surface of the eyelet 12 from a nozzle 34 connected to the other electrode [FIG. 4 (a)]. As shown in FIG. 4B, the eyelet 12 that has been partially copper-plated has
The copper plating film 20 is formed only on the inner wall surface of the through hole 14 and the mounting surface of the semiconductor chip, and the copper plating film 20 is not formed on the joining surface for joining the ground lead 22, and the exposed surface is formed. I have. Therefore, the ground lead 22 can be easily resistance-welded to a predetermined position on the exposed surface of the eyelet 12 (FIG. 4C).

In the above embodiment, a copper plating film has been described as a plating film. However, any plating film made of a metal having better thermal conductivity than the metal forming the eyelet 12 may be used. Copper alloy plating film can be adopted. Further, the semiconductor device package in which the ground lead 22 is resistance-welded and the lead wire is glass-sealed in the through hole may be subjected to nickel plating as a base plating and then to a finish plating such as gold plating. . It is needless to say that, instead of the ground lead 22, a joining lead wire having one end face joined to the surface of the eyelet 12 may be used for another purpose.

[0017]

According to the present invention, resistance welding of a joint lead wire such as an earth lead can be easily performed, and a plating film having a sufficient thickness can be formed. The airtightness and heat dissipation of the package can be improved. In addition, strict control of the thickness of the plating film can be simplified, and the manufacturing process of the semiconductor device package can be simplified.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of one embodiment according to a semiconductor device package of the present invention.

FIG. 2 shows a manufacturing method for manufacturing the semiconductor device package shown in FIG.

FIG. 3 shows another example of the manufacturing method shown in FIG.

FIG. 4 shows another embodiment according to the method for manufacturing a semiconductor device package of the present invention.

FIG. 5 is a sectional view of a conventional semiconductor device package.

FIG. 6 is an explanatory diagram illustrating a state in which a ground lead is resistance-welded in a conventional method for manufacturing a package for a semiconductor device.

[Explanation of symbols]

 Reference Signs List 10 Package for semiconductor device 12 Eyelet 14 Through hole 16 Lead wire 18 Sealing glass 20 Plating film 22 Earth lead

Claims (9)

(57) [Claims] 1. A semiconductor device package in which a lead wire is glass-sealed in a through hole formed in a metal eyelet and one end surface of a joining lead wire is joined to the surface of the eyelet. Exposing at least a portion of the eyelet surface to which one end surface of the bonding lead wire is bonded, to the surface of the eyelet including the inner wall surface of the through-hole, which has better thermal conductivity than the metal forming the eyelet; A package for a semiconductor device, wherein a plating film made of a suitable metal is formed, and one end surface of a joining lead wire is resistance-welded to an exposed portion where the surface of the eyelet is exposed. 2. A plating film comprising copper or a copper alloy,
且TsuAtsushi Saga package for a semiconductor device according to claim 1, wherein at 4μm or more. 3. The semiconductor device package according to claim 1, wherein a plating film made of copper or a copper alloy is formed on at least an inner wall surface of the through hole and a mounting surface of the semiconductor chip . 4. A semiconductor device package in which a lead wire is glass-sealed in a through hole formed in a metal eyelet and one end surface of a joining lead wire is joined to the surface of the eyelet. At the time of manufacture, at least a portion of the eyelet surface to be joined to one end surface of the joining lead wire is exposed, and the heat conduction of the eyelet surface including the inner wall surface of the through hole is higher than that of the metal forming the eyelet. A method for manufacturing a package for a semiconductor device, comprising: forming a plating film made of a metal having good properties, and then resistance-welding one end surface of a joining lead wire to an exposed portion where the eyelet surface is exposed. 5. When forming an exposed portion on a surface of an eyelet,
The Aire' preparative table surface including the inner wall surface of the through hole, after forming a plating film thermal conductivity is made of metal having good than metal forming the eyelet, the plating film of the portion joining the end surfaces of the junction leads The method for manufacturing a semiconductor device package according to claim 4, wherein the package is removed. 6. The method according to claim 1, wherein the plating film is removed by sandblasting.
6. The method for manufacturing a package for a semiconductor device according to claim 5, wherein the method is performed by a grindstone or etching. 7. When forming an exposed portion on an eyelet surface,
Eyelets table surface portion joining the end surfaces of the junction leads
A resist was applied, the eyelet surface including the inner wall surface of the through-hole, than the metal forming the eyelet to form a plating film thermal conductivity is made of good metal, then, according to claim 4 for removing the resist The manufacturing method of the package for semiconductor devices as described in the above. 8. When forming an exposed portion on the surface of the eyelet,
After bonding lead wears the mask plate eyelets surface of the side to be joined, and the inner wall surface and the semiconductor chip tower Nomen transmural hole is small and has good thermal conductivity than the metal forming the eyelet 5. The method for manufacturing a package for a semiconductor device according to claim 4, wherein a plating film made of a metal is formed. 9. The plating film is formed of copper or a copper alloy .
Both the method of manufacturing a semiconductor device package of any of claims 4-8 you a thickness of on 4μm or more to formed.