JP3297380B2 - Solar cell and method for manufacturing solar cell - Google Patents
Solar cell and method for manufacturing solar cellInfo
- Publication number
- JP3297380B2 JP3297380B2 JP22422498A JP22422498A JP3297380B2 JP 3297380 B2 JP3297380 B2 JP 3297380B2 JP 22422498 A JP22422498 A JP 22422498A JP 22422498 A JP22422498 A JP 22422498A JP 3297380 B2 JP3297380 B2 JP 3297380B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent electrode
- electrode film
- film
- power generation
- surface shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000010248 power generation Methods 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 51
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 44
- 239000011787 zinc oxide Substances 0.000 claims description 22
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 18
- 229910001887 tin oxide Inorganic materials 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000011701 zinc Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 21
- 230000007547 defect Effects 0.000 description 12
- 239000011521 glass Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000007806 chemical reaction intermediate Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は太陽電池及び太陽電
池の製造方法に関し、欠陥の発生を防止すると共に透明
性を確保して発電効率を向上させることができるように
工夫したものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell and a method for manufacturing a solar cell, which are devised so as to prevent generation of defects and secure transparency so as to improve power generation efficiency.
【０００２】[0002]
【従来の技術】従来の太陽電池の一例として、非晶質太
陽電池に採用されている構造を図３に示す。図３に示す
ように、非晶質太陽電池では、ガラス板１の上に透明電
極膜２が成膜され、この透明電極膜２の上に非晶質シリ
コン発電膜３が成膜され、この非晶質シリコン発電膜３
の上に金属電極膜４が成膜されている。2. Description of the Related Art As an example of a conventional solar cell, a structure employed in an amorphous solar cell is shown in FIG. As shown in FIG. 3, in the amorphous solar cell, a transparent electrode film 2 is formed on a glass plate 1, and an amorphous silicon power generation film 3 is formed on the transparent electrode film 2. Amorphous silicon power generation film 3
The metal electrode film 4 is formed thereon.
【０００３】ガラス基板１の厚みは約１ｍｍ、透明電極
膜２の膜厚は0.６〜1.０μｍ、非晶質シリコン発電膜３
の膜厚は0.３〜0.５μｍ、金属電極膜４の膜厚は0.３〜
0.６μｍである。The thickness of the glass substrate 1 is about 1 mm, the thickness of the transparent electrode film 2 is 0.6 to 1.0 μm,
Has a thickness of 0.3 to 0.5 μm, and the metal electrode film 4 has a thickness of 0.3 to 0.5 μm.
0.6 μm.
【０００４】この従来の太陽電池では、透明電極膜２に
酸化錫を主成分とする材料を用いており、主に化学蒸着
法（ＣＶＤ）で成膜したものを用いている。また、非晶
質シリコン発電膜３はプラズマＣＶＤ法により成膜した
ものを用いている。In this conventional solar cell, a material mainly composed of tin oxide is used for the transparent electrode film 2, and a film formed mainly by a chemical vapor deposition method (CVD) is used. The amorphous silicon power generation film 3 is formed by a plasma CVD method.
【０００５】上記構成となっている太陽電池では、太陽
光Ｐは、ガラス基板１から入射し、透明電極膜２を透過
して非晶質シリコン発電膜３に入射する。太陽光Ｐは非
晶質シリコン発電膜３に吸収され、透明電極膜２と金属
電極膜４との間に起電力が発生し、電力を外部に取り出
すことができる。In the solar cell having the above structure, sunlight P enters from the glass substrate 1, passes through the transparent electrode film 2, and enters the amorphous silicon power generation film 3. The sunlight P is absorbed by the amorphous silicon power generation film 3, and an electromotive force is generated between the transparent electrode film 2 and the metal electrode film 4, so that the power can be taken out.
【０００６】太陽電池の発電効率を向上させるために
は、上記の透明電極膜２の上面（非晶質シリコン発電膜
３が成膜される側の面）に0.２〜0.５μｍ程度の高低差
を持つ凹凸表面形状を設けることが有効である。このよ
うにすると、太陽光Ｐが透明電極膜２と非晶質シリコン
発電膜３との界面を透過する際に光路が曲げられて非晶
質シリコン発電膜３中の光路長が増加し、太陽光Ｐの利
用効率が上がって太陽電池の発電効率が向上する。In order to improve the power generation efficiency of the solar cell, the upper surface of the transparent electrode film 2 (the surface on which the amorphous silicon power generation film 3 is formed) has a thickness of about 0.2 to 0.5 μm. It is effective to provide an uneven surface shape having a height difference. In this way, when the sunlight P passes through the interface between the transparent electrode film 2 and the amorphous silicon power generation film 3, the optical path is bent, and the optical path length in the amorphous silicon power generation film 3 is increased. The utilization efficiency of the light P is increased, and the power generation efficiency of the solar cell is improved.
【０００７】[0007]
【発明が解決しようとする課題】しかし、従来の太陽電
池の非晶質シリコン発電膜３中には、透明電極膜２に設
けた凹凸表面形状の凹部（谷間）を起点としてガラス基
板１の平面に垂直な向きに延びる欠陥３１が発生しやす
い。この欠陥３１の密度は上記凹部を急峻に形成するほ
ど増加する。この欠陥３１は、太陽電池の発電効率を下
げる原因となっていた。However, in the amorphous silicon power generation film 3 of the conventional solar cell, the flat surface of the glass substrate 1 starts from the concave portion (valley) of the uneven surface shape provided on the transparent electrode film 2. A defect 31 extending in a direction perpendicular to the direction is likely to occur. The density of the defect 31 increases as the concave portion is formed more steeply. This defect 31 has caused a decrease in the power generation efficiency of the solar cell.
【０００８】また、透明電極膜２に設ける凹凸表面形状
を高低差が0.２μｍ以下となるように緩やかに形成する
ことで、非晶質シリコン発電膜３中の欠陥３１の発生を
低減することができるが、この場合には非晶質シリコン
発電膜３中の光路長を長くする効果が弱くなるため、発
電効率が上がらないと言う問題点があった。In addition, the generation of defects 31 in the amorphous silicon power generation film 3 can be reduced by forming the uneven surface shape provided on the transparent electrode film 2 gently so that the height difference is 0.2 μm or less. However, in this case, there is a problem that the effect of increasing the optical path length in the amorphous silicon power generation film 3 is weakened, and the power generation efficiency is not improved.
【０００９】さらに、非晶質シリコン発電膜３を成膜す
る際に原料ガスに水素ガスを添加したプラズマＣＶＤ法
で成膜する場合には、酸化錫を主成分とする透明電極膜
２が水素プラズマの還元作用により金属相の錫が析出し
て透明性が失われ、発電効率が下がると言う問題点もあ
った。Further, when the amorphous silicon power generation film 3 is formed by a plasma CVD method in which hydrogen gas is added to a raw material gas, the transparent electrode film 2 containing tin oxide as a main component is formed of hydrogen. There is also a problem that the tin of the metal phase is precipitated due to the reducing action of the plasma, the transparency is lost, and the power generation efficiency is reduced.
【００１０】本発明は、上記従来技術に鑑み、欠陥の発
生を防止すると共に透明性を確保した太陽電池及び太陽
電池の製造方法を提供することを目的とする。In view of the above prior art, an object of the present invention is to provide a solar cell and a method for manufacturing the solar cell, which prevent the occurrence of defects and ensure transparency.
【００１１】[0011]
【課題を解決するための手段】上記課題を解決する本発
明の構成は、透明性基板の上に透明電極膜が成膜され、
この透明電極膜の上に発電膜が成膜され、この発電膜の
上に金属電極膜が成膜されて構成されている太陽電池に
おいて、前記透明電極膜は、酸化錫を主成分とし上面に
0.０５〜0.５μｍの範囲の高低差のある凹凸表面形状を
持つ第一の透明電極膜と、酸化亜鉛を主成分とし第一の
透明電極膜の凹凸表面形状の凹部のみに選択的に積層さ
せた第二の透明電極膜とでなることを特徴とする。According to the structure of the present invention for solving the above problems, a transparent electrode film is formed on a transparent substrate,
A power generation film is formed on the transparent electrode film, and a metal electrode film is formed on the power generation film. In the solar cell, the transparent electrode film has tin oxide as a main component and is formed on the upper surface.
A first transparent electrode film having an uneven surface shape with a height difference in the range of 0.05 to 0.5 μm, and selectively only in the concave portions of the uneven surface shape of the first transparent electrode film containing zinc oxide as a main component. It is characterized by comprising a laminated second transparent electrode film.
【００１２】また本発明の構成は、透明性基板の上に透
明電極膜が成膜され、この透明電極膜の上に発電膜が成
膜され、この発電膜の上に金属電極膜が成膜されて構成
されている太陽電池において、前記透明電極膜は、酸化
錫を主成分とし上面に0.０５〜0.５μｍの範囲の高低差
のある凹凸表面形状を持つ第一の透明電極膜と、酸化亜
鉛を主成分とし第一の透明電極膜の凹凸表面形状の凹部
のみに選択的に積層させた第二の透明電極膜と、第一及
び第二の透明電極膜の上面の全面を被覆するように積層
させた第三の透明電極膜とでなることを特徴とする。Further, according to the structure of the present invention, a transparent electrode film is formed on a transparent substrate, a power generation film is formed on the transparent electrode film, and a metal electrode film is formed on the power generation film. In the solar cell, the transparent electrode film is composed of tin oxide as a main component and a first transparent electrode film having an uneven surface shape with a height difference in the range of 0.05 to 0.5 μm on the upper surface. A second transparent electrode film mainly composed of zinc oxide and selectively laminated only on the concave portions of the uneven surface shape of the first transparent electrode film, and covers the entire upper surfaces of the first and second transparent electrode films. And a third transparent electrode film laminated in such a manner.
【００１３】また本発明の構成は、透明性基板の上に、
常圧での熱化学蒸着法により酸化錫を主成分とする第一
の透明電極膜を成膜し、しかもこのときの成膜温度を調
整することにより、第一の透明電極膜の上面に0.０５〜
0.５μｍの範囲の高低差のある凹凸表面形状を形成し、
成膜温度を２５０〜３５０°Ｃとして常圧での熱化学蒸
着法により酸化亜鉛を主成分とする第二の透明電極膜を
前記第一の透明電極膜の凹凸表面形状の凹部のみに選択
的に積層させ、前記第一及び第二の透明電極膜の上に発
電膜を成膜し、前記発電膜の上に金属電極膜を成膜する
ことを特徴とする。[0013] Further, according to the structure of the present invention, on a transparent substrate,
A first transparent electrode film containing tin oxide as a main component is formed by a thermal chemical vapor deposition method at normal pressure, and by adjusting the film formation temperature at this time, the upper surface of the first transparent electrode film is reduced to zero. .05-
Forming an uneven surface shape with a height difference of 0.5 μm,
The second transparent electrode film containing zinc oxide as a main component is selectively applied only to the concave portions of the irregular surface shape of the first transparent electrode film by a thermal chemical vapor deposition method under normal pressure at a film forming temperature of 250 to 350 ° C. A power generation film is formed on the first and second transparent electrode films, and a metal electrode film is formed on the power generation film.
【００１４】また本発明の構成は、透明性基板の上に、
常圧での熱化学蒸着法により酸化錫を主成分とする第一
の透明電極膜を成膜し、しかもこのときの成膜温度を調
整することにより、第一の透明電極膜の上面に0.０５〜
0.５μｍの範囲の高低差のある凹凸表面形状を形成し、
成膜温度を２５０〜３５０°Ｃとして常圧での熱化学蒸
着法により酸化亜鉛を主成分とする第二の透明電極膜を
前記第一の透明電極膜の凹凸表面形状の凹部のみに選択
的に積層させ、成膜温度を１５０〜２５０°Ｃとして常
圧での熱化学蒸着法により酸化亜鉛を主成分とする第三
の透明電極膜を前記第一及び第二の透明電極膜の上面の
全面を被覆するように積層させ、前記第三の透明電極膜
の上に発電膜を成膜し、前記発電膜の上に金属電極膜を
成膜することを特徴とする。Further, according to the structure of the present invention, on a transparent substrate,
A first transparent electrode film containing tin oxide as a main component is formed by a thermal chemical vapor deposition method at normal pressure, and by adjusting the film formation temperature at this time, the upper surface of the first transparent electrode film is reduced to zero. .05-
Forming an uneven surface shape with a height difference of 0.5 μm,
The second transparent electrode film containing zinc oxide as a main component is selectively applied only to the concave portions of the irregular surface shape of the first transparent electrode film by a thermal chemical vapor deposition method under normal pressure at a film forming temperature of 250 to 350 ° C. The third transparent electrode film mainly composed of zinc oxide is formed on the upper surface of the first and second transparent electrode films by a thermal chemical vapor deposition method at normal pressure at a film formation temperature of 150 to 250 ° C. The power generation film is formed on the third transparent electrode film, and a metal electrode film is formed on the power generation film.
【００１５】また本発明の構成は、前記第二の透明電極
膜または前記第三の透明電極膜は、ジエチル亜鉛（Ｚｎ
（Ｃ2 Ｈ5 ）2 ）蒸気および水蒸気（Ｈ2 Ｏ）を主原料
とし、原料ガスにトリエチルアルミニウム（Ａｌ（Ｃ2
Ｈ5 ）3 ）、またはジボラン（Ｂ2 Ｈ6 ）、または弗化
水素（ＨＦ）を添加した熱化学蒸着法により成膜するこ
とを特徴とする。Further, according to the structure of the present invention, the second transparent electrode film or the third transparent electrode film is preferably made of diethyl zinc (Zn).
(C 2 H 5 ) 2 ) Steam and water vapor (H 2 O) as main raw materials, and triethyl aluminum (Al (C 2
H 5) 3), or diborane (B 2 H 6), or characterized in that formed by thermal chemical vapor deposition with added hydrogen fluoride (HF).
【００１６】[0016]
【発明の実施の形態】以下に本発明の実施の形態を図面
に基づき詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【００１７】図１は本発明の第１の実施の形態に係る太
陽電池を示す。同図に示すように、本実施の形態に係る
太陽電池では、透明電極膜として二層の透明電極膜２
１，２２を採用していることが技術的なポイントになっ
ている。即ち、ガラス基板１（厚さ約１ｍｍ）の上に、
第１及び第２の透明電極膜２１，２２（膜厚が０．６〜
１．０μｍ）が成膜され、この第１及び第２の透明電極
膜２１，２２の上にプラズマＣＶＤ法により非晶質シリ
コン発電膜３（膜厚が０．３〜０．５μｍ）が成膜さ
れ、この非晶質シリコン発電膜３の上に金属電極膜４
（膜厚が０．３〜０．６μｍ）が成膜されている。また
第一の透明電極膜２１の上面（非晶質シリコン発電膜３
が成膜される側の面）には、0.０５〜0.５μｍ程度の高
低差を持つ凹凸表面形状が設けられている。FIG. 1 shows a solar cell according to a first embodiment of the present invention. As shown in the figure, in the solar cell according to the present embodiment, two transparent electrode films 2 are used as transparent electrode films.
It is a technical point to adopt 1,22. That is, on a glass substrate 1 (about 1 mm thick),
First and second transparent electrode films 21 and 22 (thickness of 0.6 to
1.0 μm), and an amorphous silicon power generation film 3 (having a thickness of 0.3 to 0.5 μm) is formed on the first and second transparent electrode films 21 and 22 by a plasma CVD method. A metal electrode film 4 is formed on the amorphous silicon power generation film 3.
(Having a thickness of 0.3 to 0.6 μm). The upper surface of the first transparent electrode film 21 (the amorphous silicon power generation film 3)
The surface on the side on which the film is formed is provided with an uneven surface shape having a height difference of about 0.05 to 0.5 μm.
【００１８】この太陽電池では、太陽光Ｐは、ガラス基
板１から入射し、透明電極膜２１，２２を透過して非晶
質シリコン発電膜３に入射する。太陽光Ｐは非晶質シリ
コン発電膜３に吸収され、透明電極膜２１，２２と金属
電極膜４との間に起電力が発生し、電力を外部に取り出
すことができる。In this solar cell, sunlight P enters from the glass substrate 1, passes through the transparent electrode films 21 and 22, and enters the amorphous silicon power generation film 3. The sunlight P is absorbed by the amorphous silicon power generation film 3, an electromotive force is generated between the transparent electrode films 21 and 22 and the metal electrode film 4, and the power can be taken out.
【００１９】ここで、本発明のポイントとなっている第
一及び第二の透明電極膜２１，２２について、更に説明
をする。第１の実施の形態による太陽電池では、酸化錫
を主成分とする第一の透明電極膜２１の上面（非晶質シ
リコン発電膜３が成膜される側の面）に凹凸表面形状を
設け、酸化亜鉛を主成分とする第二の透明電極膜２２を
第一の透明電極膜２１の凹凸表面形状の凹部のみに選択
的に積層させたものである。Here, the first and second transparent electrode films 21 and 22, which are the point of the present invention, will be further described. In the solar cell according to the first embodiment, an uneven surface shape is provided on the upper surface (the surface on which the amorphous silicon power generation film 3 is formed) of the first transparent electrode film 21 containing tin oxide as a main component. The second transparent electrode film 22 mainly composed of zinc oxide is selectively laminated only on the concave portion of the first transparent electrode film 21 having the uneven surface shape.
【００２０】酸化錫を主成分とする第一の透明電極膜２
１は常圧での熱ＣＶＤ法によりガラス基板１上、また
は、0.０５〜0.１μｍの膜厚のＳｉＯ2 を被着させたガ
ラス基板１上に成長させ、四塩化錫（ＳｎＣｌ4 ）蒸気
および水蒸気（Ｈ2 Ｏ）を主原料として用い、原料ガス
に弗化水素（ＨＦ）などの弗素を含む材料ガスを添加す
ると第一の透明電極膜２１の抵抗値を低下させる効果が
ある。First transparent electrode film 2 mainly composed of tin oxide
Numeral 1 is grown on the glass substrate 1 by thermal CVD at normal pressure or on the glass substrate 1 coated with SiO 2 having a thickness of 0.05 to 0.1 μm, and tin tetrachloride (SnCl 4 ) When steam and water vapor (H 2 O) are used as main raw materials and a source gas containing fluorine such as hydrogen fluoride (HF) is added to the raw material gas, the resistance of the first transparent electrode film 21 is reduced.
【００２１】第一の透明電極膜２１の上面に凹凸表面形
状を設けるためには、熱ＣＶＤの基板温度（成膜温度）
を４２０〜５５０℃の範囲で調整して、適正な凹凸表面
形状となるように基板温度を選んでＣＶＤ成膜を行う。
一般に基板温度を上げると急峻な凹凸表面形状が得ら
れ、基板温度を下げると緩やかな凹凸表面形状が得られ
る。In order to provide an uneven surface shape on the upper surface of the first transparent electrode film 21, the substrate temperature (film forming temperature) of thermal CVD
Is adjusted in the range of 420 to 550 ° C., and a CVD film is formed by selecting a substrate temperature so as to obtain an appropriate uneven surface shape.
Generally, when the substrate temperature is increased, a steep uneven surface shape is obtained, and when the substrate temperature is lowered, a gentle uneven surface shape is obtained.
【００２２】酸化亜鉛を主成分とする第二の透明電極膜
２２は常圧の熱ＣＶＤ法により第一の透明電極膜２１上
に成長させ、ジエチル亜鉛（Ｚｎ（Ｃ2 Ｈ5 ）2 ）蒸気
および水蒸気（Ｈ2 Ｏ）を主原料とした熱ＣＶＤ法によ
る成膜を行い、原料ガスにトリエチルアルミニウム（Ａ
ｌ（Ｃ2 Ｈ5 ）3 ）、ジボラン（Ｂ2 Ｈ6 ）、弗化水素
（ＨＦ）などを添加すると抵抗値を低下させる効果があ
る。The second transparent electrode film 22 containing zinc oxide as a main component is grown on the first transparent electrode film 21 by a normal pressure thermal CVD method, and is vaporized with diethyl zinc (Zn (C 2 H 5 ) 2 ). A film is formed by a thermal CVD method using water and water vapor (H 2 O) as main materials, and triethyl aluminum (A
Addition of l (C 2 H 5 ) 3 ), diborane (B 2 H 6 ), hydrogen fluoride (HF), etc. has the effect of lowering the resistance value.
【００２３】第一の透明電極膜２１の凹部のみに、選択
的に第二の透明電極膜２２を積層させるためには、熱Ｃ
ＶＤの基板温度（成膜温度）を２５０〜３５０℃の範囲
で調整して、適正な積層状況となるように基板温度を選
んでＣＶＤ成膜を行う。急峻な凹凸表面形状を持つ下地
に酸化亜鉛を主成分とする第二の透明電極膜２２を上記
の原料から積層させる場合には、一般に基板温度を上げ
ると下地凹部への積層選択性が増加してサブミクロンレ
ベルの谷間を埋めるように積層成長が起き、基板温度を
下げるとこのような選択成長性が減少し、下地の凹凸表
面形状の全面へ被覆率が高い状態で積層成膜が起きる。In order to selectively stack the second transparent electrode film 22 only on the concave portion of the first transparent electrode film 21, heat C
The VD substrate temperature (film formation temperature) is adjusted in the range of 250 to 350 ° C., and the CVD film is formed by selecting the substrate temperature so as to obtain an appropriate lamination state. When the second transparent electrode film 22 containing zinc oxide as a main component is laminated from the above-described raw material on a substrate having a steep uneven surface shape, generally, increasing the substrate temperature increases the lamination selectivity to the concave portions of the substrate. Thus, the layer growth occurs so as to fill the valleys at the submicron level. When the substrate temperature is lowered, such selective growth property is reduced, and the layer formation is performed in a state where the coverage is high over the entire uneven surface shape of the base.
【００２４】このような第二の透明電極膜２２の積層状
況の相違は、原料ガスが基板表面上で反応して酸化亜鉛
が生成して下地基板表面に固定されるまでの過程が基板
温度により異なることに起因している。The difference in the state of lamination of the second transparent electrode film 22 is that the process from the reaction of the raw material gas on the substrate surface to the generation of zinc oxide and the fixation to the underlying substrate surface depends on the substrate temperature. Due to different things.
【００２５】すなわち、基板温度が２５０〜３５０℃で
酸化亜鉛を主成分とする第二の透明電極膜２２を積層さ
せると、上記原料が化学反応を起こす過程で形成される
反応中間体に、基板から受け渡される熱エネルギーが多
く、それが反応中間体の運動エネルギーとなり、基板表
面に固定されるまでの間に基板表面上を活発に動き回る
ことができるようになった結果、下地基板の凹部の安定
な位置に移動して留まろうとする作用が働き下地基板の
凹部に選択的に積層されるようになる。That is, when the second transparent electrode film 22 containing zinc oxide as a main component is laminated at a substrate temperature of 250 to 350 ° C., the reaction intermediate formed in the process of causing a chemical reaction of the above-mentioned raw materials is added to the substrate. Heat energy transferred from the substrate, it becomes the kinetic energy of the reaction intermediate, and can move around on the substrate surface until it is fixed to the substrate surface. The action of moving to a stable position and staying works to selectively stack in the concave portion of the underlying substrate.
【００２６】ガラス基板等のように平坦な基板表面上に
成膜した時の膜厚が0.０２〜0.２μｍとなるような条件
で積層させた第二の透明電極膜２２の膜厚が望ましい。The thickness of the second transparent electrode film 22 laminated under a condition that the film thickness when formed on a flat substrate surface such as a glass substrate is 0.02 to 0.2 μm is desirable.
【００２７】さらに、第二の透明電極膜２２の膜厚を適
切な膜厚に選ぶことによっても下地凹部の埋め込み状況
を適正に制御することができる。第二の透明電極膜２２
の膜厚を増加させ、0.３〜1.０μｍとなる条件で第二の
透明電極膜２２を積層させると、最初の第一の透明電極
膜２１の成膜後に設けられていた0.２〜0.５μｍの高低
差が無くなって、略完全に平坦な表面状態とすることも
可能である。Further, by selecting an appropriate thickness of the second transparent electrode film 22, the state of embedding of the underlying concave portion can be appropriately controlled. Second transparent electrode film 22
When the second transparent electrode film 22 is laminated under the condition of 0.3 to 1.0 μm, the thickness of 0.2 is provided after the first first transparent electrode film 21 is formed. It is possible to make the surface state almost completely flat by eliminating the difference in height of about 0.5 μm.
【００２８】また、基板温度を下げて１５０〜２５０℃
で酸化亜鉛を主成分とする第二の透明電極膜２２を積層
させると、上記原料が化学反応を起こす過程で形成され
る反応中間体に、基板から受け渡される熱エネルギーが
少なく、反応中間体が基板表面上を動き回るに足る運動
エネルギーが無いため、下地基板上で移動すること無し
に膜として固定され、下地基板の凹部に選択的に積層さ
れることが無く、被覆率が高く被着成膜される。Further, the substrate temperature is lowered to 150 to 250 ° C.
When the second transparent electrode film 22 containing zinc oxide as a main component is laminated, the reaction intermediate formed in the process of causing a chemical reaction of the above-mentioned raw material has less heat energy transferred from the substrate, and the reaction intermediate Does not have enough kinetic energy to move around on the substrate surface, so it is fixed as a film without moving on the underlying substrate, and is not selectively laminated in the recesses of the underlying substrate. Filmed.
【００２９】上述のように、酸化亜鉛を主成分とする第
二の透明電極膜２２を２５０〜３５０℃の基板温度で、
酸化錫を主成分とする凹凸表面形状を持つ第一の透明電
極膜２１上に積層成膜すれば、サブミクロンレベルの急
峻な凹部を選択的に無くすことができるようになるの
で、凹部を起源とする非晶質シリコン発電膜３中の欠陥
の発生を抑止することが可能となり、太陽電池の発電効
率を向上させることができる。As described above, the second transparent electrode film 22 containing zinc oxide as a main component is formed at a substrate temperature of 250 to 350 ° C.
If the layer is formed on the first transparent electrode film 21 having an irregular surface shape mainly composed of tin oxide, it is possible to selectively eliminate the steep submicron level concave portion. It is possible to suppress the generation of defects in the amorphous silicon power generation film 3 and improve the power generation efficiency of the solar cell.
【００３０】次に本発明の第２の実施の形態に係る太陽
電池を図３に示す。なお図１に示す第１の実施の形態と
同一機能を果たす部分には同一符号を付し、重複する説
明は省略する。Next, FIG. 3 shows a solar cell according to a second embodiment of the present invention. Note that parts that perform the same functions as those in the first embodiment shown in FIG. 1 are denoted by the same reference numerals, and overlapping descriptions will be omitted.
【００３１】第２の実施の形態に係る太陽電池では、第
二の透明電極膜２２の上に、酸化亜鉛を主成分とする第
三の透明電極膜２３を高い被覆率で、第一及び第二の透
明電極膜２１，２２の上面の全面を被覆するように積層
させたものである。In the solar cell according to the second embodiment, a third transparent electrode film 23 containing zinc oxide as a main component is formed on the second transparent electrode film 22 at a high covering ratio. The two transparent electrode films 21 and 22 are laminated so as to cover the entire upper surface.
【００３２】第三の透明電極膜２３の原料には第二の透
明電極膜２２と同じ、ジエチル亜鉛（Ｚｎ（Ｃ2 Ｈ5 ）
2 ）蒸気および水蒸気（Ｈ2 Ｏ）を主原料とし常圧でＣ
ＶＤ成膜を行い、原料ガスにトリエチルアルミニウム
（Ａｌ（Ｃ2 Ｈ5 ）3 ）、ジボラン（Ｂ2 Ｈ6 ）、弗化
水素（ＨＦ）などを添加すると抵抗値を低下させる効果
がある。The raw material of the third transparent electrode film 23 is the same as that of the second transparent electrode film 22, ie, diethyl zinc (Zn (C 2 H 5 )).
2 ) Steam and steam (H 2 O) as main raw materials and C at normal pressure
Performed VD deposition, triethylaluminum as a source gas (Al (C 2 H 5) 3), diborane (B 2 H 6), the effect of lowering the resistance and the like is added hydrogen fluoride (HF).
【００３３】本実施例では、第二の透明電極膜２３を２
５０〜３５０℃の基板温度（成膜温度）で成膜した後
に、引き続き１５０〜２５０℃の基板温度（成膜温度）
で第三の透明電極膜２３を積層させると、前述のような
作用により、第一及び第二の透明電極膜２１，２２の表
面全面に第三の透明電極膜２３が被覆されるため、第一
の透明電極膜２１が露出している部分を無くすことがで
きる。In this embodiment, the second transparent electrode film 23 is
After forming a film at a substrate temperature of 50 to 350 ° C. (film forming temperature), a substrate temperature of 150 to 250 ° C. (film forming temperature) is continued.
When the third transparent electrode film 23 is laminated by the above, the third transparent electrode film 23 is coated on the entire surface of the first and second transparent electrode films 21 and 22 by the above-described operation. A portion where one transparent electrode film 21 is exposed can be eliminated.
【００３４】ガラス基板等のように平坦な基板表面上に
成膜した時の膜厚が0.０１〜0.１μｍとなるような条件
で積層させた第三の透明電極膜２３の膜厚が望ましい。The thickness of the third transparent electrode film 23 laminated under such a condition that the film thickness when formed on a flat substrate surface such as a glass substrate is 0.01 to 0.1 μm. desirable.
【００３５】一般に酸化亜鉛が酸化錫よりも還元耐性に
優れるため、本実施例では、表面がすべて酸化亜鉛で覆
い尽くされているので、水素プラズマ曝露に対する耐久
性が向上し、水素ガスを添加したプラズマＣＶＤ法で非
晶質シリコン発電膜３を成膜しても還元劣化による透明
性の消失が起きず、発電効率が高い太陽電池を製造する
ことができる。In general, since zinc oxide is more excellent in reduction resistance than tin oxide, in this embodiment, the surface is entirely covered with zinc oxide, so that durability against hydrogen plasma exposure is improved, and hydrogen gas is added. Even if the amorphous silicon power generation film 3 is formed by the plasma CVD method, the transparency is not lost due to the reduction degradation, and a solar cell with high power generation efficiency can be manufactured.
【００３６】[0036]
【発明の効果】以上、実施の形態と共に具体的に説明し
たように、本発明では、透明性基板の上に透明電極膜が
成膜され、この透明電極膜の上に発電膜が成膜され、こ
の発電膜の上に金属電極膜が成膜されて構成されている
太陽電池において、前記透明電極膜は、酸化錫を主成分
とし上面に0.０５〜0.５μｍの範囲の高低差のある凹凸
表面形状を持つ第一の透明電極膜と、酸化亜鉛を主成分
とし第一の透明電極膜の凹凸表面形状の凹部のみに選択
的に積層させた第二の透明電極膜とでなる構成とした。As described above in detail with the embodiments, in the present invention, a transparent electrode film is formed on a transparent substrate, and a power generation film is formed on the transparent electrode film. In a solar cell in which a metal electrode film is formed on the power generation film, the transparent electrode film has tin oxide as a main component and an upper surface having a height difference of 0.05 to 0.5 μm. A structure comprising a first transparent electrode film having a certain uneven surface shape and a second transparent electrode film mainly composed of zinc oxide and selectively laminated only on the concave portions of the uneven surface shape of the first transparent electrode film. And
【００３７】上記構成としたため、本発明では発電効率
を高く維持しつつ発電膜中に欠陥が発生するのを防止す
ることができる。With the above configuration, the present invention can prevent generation of defects in the power generation film while maintaining high power generation efficiency.
【００３８】また本発明では、透明性基板の上に透明電
極膜が成膜され、この透明電極膜の上に発電膜が成膜さ
れ、この発電膜の上に金属電極膜が成膜されて構成され
ている太陽電池において、前記透明電極膜は、酸化錫を
主成分とし上面に0.０５〜0.５μｍの範囲の高低差のあ
る凹凸表面形状を持つ第一の透明電極膜と、酸化亜鉛を
主成分とし第一の透明電極膜の凹凸表面形状の凹部のみ
に選択的に積層させた第二の透明電極膜と、第一及び第
二の透明電極膜の上面の全面を被覆するように積層させ
た第三の透明電極膜とでなる構成とした。In the present invention, a transparent electrode film is formed on a transparent substrate, a power generation film is formed on the transparent electrode film, and a metal electrode film is formed on the power generation film. In the solar cell having the above structure, the transparent electrode film is mainly composed of tin oxide and has a first transparent electrode film having an uneven surface shape with a height difference in a range of 0.05 to 0.5 μm on an upper surface, A second transparent electrode film mainly composed of zinc and selectively laminated only on the concave portion of the uneven surface shape of the first transparent electrode film, and covers the entire upper surfaces of the first and second transparent electrode films. And a third transparent electrode film laminated thereon.
【００３９】上記構成としたため、本発明では発電効率
を高く維持しつつ発電膜中に欠陥が発生するのを防止す
ることができると共に、発電膜の透明性を確保すること
ができる。With the above-described structure, the present invention can prevent generation of defects in the power generation film while maintaining high power generation efficiency, and can ensure transparency of the power generation film.
【００４０】また本発明では、透明性基板の上に、常圧
での熱化学蒸着法により酸化錫を主成分とする第一の透
明電極膜を成膜し、しかもこのときの成膜温度を調整す
ることにより、第一の透明電極膜の上面に0.０５〜0.５
μｍの範囲の高低差のある凹凸表面形状を形成し、成膜
温度を２５０〜３５０°Ｃとして常圧での熱化学蒸着法
により酸化亜鉛を主成分とする第二の透明電極膜を前記
第一の透明電極膜の凹凸表面形状の凹部のみに選択的に
積層させ、前記第一及び第二の透明電極膜の上に発電膜
を成膜し、前記発電膜の上に金属電極膜を成膜する構成
とした。In the present invention, a first transparent electrode film mainly composed of tin oxide is formed on a transparent substrate by a thermal chemical vapor deposition method at normal pressure. By adjusting, 0.05-0.5 on the upper surface of the first transparent electrode film.
A second transparent electrode film mainly composed of zinc oxide was formed by a thermal chemical vapor deposition method under normal pressure at a film formation temperature of 250 to 350 ° C. by forming a concave-convex surface shape having a height difference in the range of μm. A power generation film is formed on the first and second transparent electrode films selectively on only the concave portions of the uneven surface shape of the one transparent electrode film, and a metal electrode film is formed on the power generation film. It was configured to be a film.
【００４１】上記構成としたため、本発明では発電効率
を高く維持しつつ発電膜中に欠陥が発生するのを防止す
ることができる。With the above configuration, the present invention can prevent generation of defects in the power generation film while maintaining high power generation efficiency.
【００４２】また本発明では、透明性基板の上に、常圧
での熱化学蒸着法により酸化錫を主成分とする第一の透
明電極膜を成膜し、しかもこのときの成膜温度を調整す
ることにより、第一の透明電極膜の上面に0.０５〜0.５
μｍの範囲の高低差のある凹凸表面形状を形成し、成膜
温度を２５０〜３５０°Ｃとして常圧での熱化学蒸着法
により酸化亜鉛を主成分とする第二の透明電極膜を前記
第一の透明電極膜の凹凸表面形状の凹部のみに選択的に
積層させ、成膜温度を１５０〜２５０°Ｃとして常圧で
の熱化学蒸着法により酸化亜鉛を主成分とする第三の透
明電極膜を前記第一及び第二の透明電極膜の上面の全面
を被覆するように積層させ、前記第三の透明電極膜の上
に発電膜を成膜し、前記発電膜の上に金属電極膜を成膜
する構成とした。In the present invention, a first transparent electrode film containing tin oxide as a main component is formed on a transparent substrate by a thermal chemical vapor deposition method under normal pressure. By adjusting, 0.05-0.5 on the upper surface of the first transparent electrode film.
A second transparent electrode film mainly composed of zinc oxide was formed by a thermal chemical vapor deposition method under normal pressure at a film formation temperature of 250 to 350 ° C. by forming a concave-convex surface shape having a height difference in the range of μm. A third transparent electrode containing zinc oxide as a main component by a thermal chemical vapor deposition method under normal pressure at a film forming temperature of 150 to 250 ° C. by selectively laminating only the concave portions of the concave and convex surface shape of one transparent electrode film. A film is laminated so as to cover the entire upper surfaces of the first and second transparent electrode films, a power generation film is formed on the third transparent electrode film, and a metal electrode film is formed on the power generation film. Was formed.
【００４３】上記構成としたため、本発明では発電効率
を高く維持しつつ発電膜中に欠陥が発生するのを防止す
ることができと共に、発電膜の透明性を確保することが
できる。With the above configuration, the present invention can prevent generation of defects in the power generation film while maintaining high power generation efficiency, and can ensure transparency of the power generation film.
【００４４】また本発明では、前記第二の透明電極膜ま
たは前記第三の透明電極膜は、ジエチル亜鉛（Ｚｎ（Ｃ
2 Ｈ5 ）2 ）蒸気および水蒸気（Ｈ2 Ｏ）を主原料と
し、原料ガスにトリエチルアルミニウム（Ａｌ（Ｃ2 Ｈ
5 ）3 ）、またはジボラン（Ｂ 2 Ｈ6 ）、または弗化水
素（ＨＦ）を添加した熱化学蒸着法により成膜する構成
とした。Further, in the present invention, the second transparent electrode film is provided.
Alternatively, the third transparent electrode film is made of diethyl zinc (Zn (C
TwoHFive)Two) Steam and water vapor (HTwoO) as the main raw material
And triethyl aluminum (Al (CTwoH
Five)Three) Or diborane (B TwoH6) Or fluorinated water
For forming a film by thermal chemical vapor deposition with addition of hydrogen (HF)
And
【００４５】上記構成としたため、本発明では透明電極
膜の抵抗値を低下させることができる。With the above configuration, the present invention can reduce the resistance value of the transparent electrode film.
【図１】本発明の第１の実施の形態に係る太陽電池を示
す断面図。FIG. 1 is a sectional view showing a solar cell according to a first embodiment of the present invention.
【図２】本発明の第２の実施の形態に係る太陽電池を示
す断面図。FIG. 2 is a sectional view showing a solar cell according to a second embodiment of the present invention.
【図３】従来の太陽電池を示す断面図。FIG. 3 is a cross-sectional view showing a conventional solar cell.
１ ガラス基板 ２ 透明電極膜 ３ 非晶質シリコン発電膜 ４ 金属電極膜 ２１ 第１の透明電極膜 ２２ 第２の透明電極膜 ２３ 第３の透明電極膜 ３１ 欠陥 Reference Signs List 1 glass substrate 2 transparent electrode film 3 amorphous silicon power generation film 4 metal electrode film 21 first transparent electrode film 22 second transparent electrode film 23 third transparent electrode film 31 defect
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭61−216489（ＪＰ，Ａ) 特開 平１−194208（ＪＰ，Ａ) 特開 平７−312437（ＪＰ，Ａ) 特開 平７−45845（ＪＰ，Ａ) 特開 平６−120534（ＪＰ，Ａ) 特開 昭61−116886（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 31/04 - 31/078 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-61-216489 (JP, A) JP-A-1-194208 (JP, A) JP-A-7-312437 (JP, A) JP-A-7-124 45845 (JP, A) JP-A-6-120534 (JP, A) JP-A-61-116886 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 31/04-31 / 078
Claims (5)
れ、この透明電極膜の上に発電膜が成膜され、この発電
膜の上に金属電極膜が成膜されて構成されている太陽電
池において、 前記透明電極膜は、 酸化錫を主成分とし上面に0.０５〜0.５μｍの範囲の高
低差のある凹凸表面形状を持つ第一の透明電極膜と、 酸化亜鉛を主成分とし第一の透明電極膜の凹凸表面形状
の凹部のみに選択的に積層させた第二の透明電極膜とで
なることを特徴とする太陽電池。1. A transparent electrode film is formed on a transparent substrate, a power generation film is formed on the transparent electrode film, and a metal electrode film is formed on the power generation film. A transparent electrode film comprising: a first transparent electrode film having tin oxide as a main component and an uneven surface shape having a height difference in a range of 0.05 to 0.5 μm on an upper surface, and zinc oxide; A solar cell comprising: a second transparent electrode film selectively laminated as a component only in a concave portion having a concave-convex surface shape of the first transparent electrode film.
れ、この透明電極膜の上に発電膜が成膜され、この発電
膜の上に金属電極膜が成膜されて構成されている太陽電
池において、 前記透明電極膜は、 酸化錫を主成分とし上面に0.０５〜0.５μｍの範囲の高
低差のある凹凸表面形状を持つ第一の透明電極膜と、 酸化亜鉛を主成分とし第一の透明電極膜の凹凸表面形状
の凹部のみに選択的に積層させた第二の透明電極膜と、 第一及び第二の透明電極膜の上面の全面を被覆するよう
に積層させた第三の透明電極膜とでなることを特徴とす
る太陽電池。2. A transparent electrode film is formed on a transparent substrate, a power generation film is formed on the transparent electrode film, and a metal electrode film is formed on the power generation film. A transparent electrode film comprising: a first transparent electrode film having tin oxide as a main component and an uneven surface shape having a height difference in a range of 0.05 to 0.5 μm on an upper surface, and zinc oxide; A second transparent electrode film which is selectively laminated only on the concave portion of the uneven surface shape of the first transparent electrode film as a component, and is laminated so as to cover the entire upper surfaces of the first and second transparent electrode films. And a third transparent electrode film.
法により酸化錫を主成分とする第一の透明電極膜を成膜
し、しかもこのときの成膜温度を調整することにより、
第一の透明電極膜の上面に0.０５〜0.５μｍの範囲の高
低差のある凹凸表面形状を形成し、 成膜温度を２５０〜３５０°Ｃとして常圧での熱化学蒸
着法により酸化亜鉛を主成分とする第二の透明電極膜を
前記第一の透明電極膜の凹凸表面形状の凹部のみに選択
的に積層させ、 前記第一及び第二の透明電極膜の上に発電膜を成膜し、 前記発電膜の上に金属電極膜を成膜することを特徴とす
る太陽電池の製造方法。3. A method of forming a first transparent electrode film mainly composed of tin oxide on a transparent substrate by a thermal chemical vapor deposition method under normal pressure, and adjusting a film forming temperature at this time. By
An uneven surface shape with a height difference of 0.05 to 0.5 μm is formed on the upper surface of the first transparent electrode film, and the film is oxidized by a thermal chemical vapor deposition method under normal pressure at a film formation temperature of 250 to 350 ° C. A second transparent electrode film containing zinc as a main component is selectively laminated only on the concave portion of the uneven surface shape of the first transparent electrode film, and a power generation film is formed on the first and second transparent electrode films. A method of manufacturing a solar cell, comprising: forming a film; and forming a metal electrode film on the power generation film.
法により酸化錫を主成分とする第一の透明電極膜を成膜
し、しかもこのときの成膜温度を調整することにより、
第一の透明電極膜の上面に0.０５〜0.５μｍの範囲の高
低差のある凹凸表面形状を形成し、 成膜温度を２５０〜３５０°Ｃとして常圧での熱化学蒸
着法により酸化亜鉛を主成分とする第二の透明電極膜を
前記第一の透明電極膜の凹凸表面形状の凹部のみに選択
的に積層させ、 成膜温度を１５０〜２５０°Ｃとして常圧での熱化学蒸
着法により酸化亜鉛を主成分とする第三の透明電極膜を
前記第一及び第二の透明電極膜の上面の全面を被覆する
ように積層させ、 前記第三の透明電極膜の上に発電膜を成膜し、 前記発電膜の上に金属電極膜を成膜することを特徴とす
る太陽電池の製造方法。4. A method of forming a first transparent electrode film mainly composed of tin oxide on a transparent substrate by a thermal chemical vapor deposition method under normal pressure, and adjusting a film forming temperature at this time. By
An uneven surface shape with a height difference of 0.05 to 0.5 μm is formed on the upper surface of the first transparent electrode film, and the film is oxidized by a thermal chemical vapor deposition method under normal pressure at a film formation temperature of 250 to 350 ° C. A second transparent electrode film containing zinc as a main component is selectively laminated only on the concave portions of the concave and convex surface shape of the first transparent electrode film. A third transparent electrode film containing zinc oxide as a main component is laminated by vapor deposition so as to cover the entire upper surfaces of the first and second transparent electrode films, and power is generated on the third transparent electrode film. A method for manufacturing a solar cell, comprising: forming a film; and forming a metal electrode film on the power generation film.
透明電極膜は、ジエチル亜鉛（Ｚｎ（Ｃ2 Ｈ5 ）2 ）蒸
気および水蒸気（Ｈ2 Ｏ）を主原料とし、原料ガスにト
リエチルアルミニウム（Ａｌ（Ｃ2 Ｈ5 ）3 ）、または
ジボラン（Ｂ 2 Ｈ6 ）、または弗化水素（ＨＦ）を添加
した熱化学蒸着法により成膜することを特徴とする請求
項４の太陽電池の製造方法。5. The second transparent electrode film or the third transparent electrode film
The transparent electrode film is made of diethyl zinc (Zn (CTwoHFive)Two) Steam
Air and water vapor (HTwoO) as the main raw material, and
Liethyl aluminum (Al (CTwoHFive)Three), Or
Diborane (B TwoH6) Or hydrogen fluoride (HF)
Characterized in that the film is formed by a thermal chemical vapor deposition method
Item 4. A method for manufacturing a solar cell according to Item 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22422498A JP3297380B2 (en) | 1998-08-07 | 1998-08-07 | Solar cell and method for manufacturing solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22422498A JP3297380B2 (en) | 1998-08-07 | 1998-08-07 | Solar cell and method for manufacturing solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000058890A JP2000058890A (en) | 2000-02-25 |
| JP3297380B2 true JP3297380B2 (en) | 2002-07-02 |
Family
ID=16810462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22422498A Expired - Fee Related JP3297380B2 (en) | 1998-08-07 | 1998-08-07 | Solar cell and method for manufacturing solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3297380B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010134360A1 (en) * | 2009-05-18 | 2010-11-25 | 三菱電機株式会社 | Thin film solar cell and method for manufacturing same |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006183117A (en) * | 2004-12-28 | 2006-07-13 | Showa Shell Sekiyu Kk | Manufacturing method of ZnO-based transparent conductive film by MOCVD (metal organic chemical vapor deposition) |
| JP4977478B2 (en) * | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnO film and method of manufacturing TFT using the same |
| JP5243697B2 (en) * | 2006-04-19 | 2013-07-24 | 株式会社カネカ | Transparent conductive film for photoelectric conversion device and manufacturing method thereof |
| JP4904311B2 (en) * | 2008-04-28 | 2012-03-28 | 株式会社カネカ | Method for manufacturing substrate with transparent conductive film for thin film photoelectric conversion device |
| KR20100004739A (en) | 2008-07-04 | 2010-01-13 | 삼성전자주식회사 | Transparent conductive layer and method of manufacturing the same |
| JP5515144B2 (en) * | 2009-05-12 | 2014-06-11 | 東ソー・ファインケム株式会社 | Composition for forming doped zinc oxide thin film and method for producing doped zinc oxide thin film |
| JP5688225B2 (en) * | 2010-02-16 | 2015-03-25 | 東ソー・ファインケム株式会社 | Composition for producing zinc oxide thin film |
| US9096441B2 (en) | 2009-04-21 | 2015-08-04 | Tosoh Finechem Corporation | Composition for manufacturing doped or undoped zinc oxide thin film and method for manufacturing zinc oxide thin film using same |
| JP5641717B2 (en) * | 2009-08-27 | 2014-12-17 | 東ソー・ファインケム株式会社 | Composition for producing doped zinc oxide thin film and method for producing doped zinc oxide thin film using the same |
| KR20120036976A (en) * | 2009-07-29 | 2012-04-18 | 아사히 가라스 가부시키가이샤 | Transparent conductive substrate for solar cell, and solar cell |
| JP5559620B2 (en) * | 2010-07-07 | 2014-07-23 | 株式会社カネカ | Substrate with transparent conductive film |
| KR101620432B1 (en) | 2010-09-20 | 2016-05-12 | 엘지전자 주식회사 | Solar cell module and manufacturing method thereof |
-
1998
- 1998-08-07 JP JP22422498A patent/JP3297380B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010134360A1 (en) * | 2009-05-18 | 2010-11-25 | 三菱電機株式会社 | Thin film solar cell and method for manufacturing same |
| JP5538375B2 (en) * | 2009-05-18 | 2014-07-02 | 三菱電機株式会社 | Thin film solar cell and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000058890A (en) | 2000-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7174188B1 (en) | SOLAR CELL AND MANUFACTURING METHOD THEREOF, SOLAR CELL MODULE | |
| JP3297380B2 (en) | Solar cell and method for manufacturing solar cell | |
| JP3957461B2 (en) | Solar cell and method for manufacturing the same | |
| TW201205830A (en) | Thin film solar cell structure and fabricating method thereof | |
| JP2000294812A (en) | Photoelectric converter element and its manufacture | |
| JP2783918B2 (en) | Method for manufacturing photovoltaic device | |
| JP2001085722A (en) | Method for manufacturing transparent electrode film and solar battery | |
| US4903102A (en) | Semiconductor photoelectric conversion device and method of making the same | |
| JP2000223724A (en) | Amorphous silicon solar battery and its manufacture | |
| JPS61278171A (en) | Thin film photoelectric conversion device | |
| CN103403874A (en) | Multiple solar cell and method of manufacturing the same | |
| JP3609147B2 (en) | Photoelectric conversion device | |
| JP3229705B2 (en) | Photovoltaic device | |
| JPS58111379A (en) | Thin-film solar cell | |
| JP2550888B2 (en) | Solar cell | |
| JP3172365B2 (en) | Photovoltaic device and manufacturing method thereof | |
| JP4115071B2 (en) | Photovoltaic device | |
| JPH0574951B2 (en) | ||
| JPS60253253A (en) | Back protective sheet for solar cell module | |
| JPH06338223A (en) | Transparent conductive film | |
| JP3723125B2 (en) | Method for manufacturing tandem solar cell | |
| CN216871985U (en) | Solar cell's notacoria structure and solar cell | |
| JPH04133362A (en) | Photovoltaic device | |
| JPS61116886A (en) | Manufacture of photovoltaic device | |
| JPH0365906B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20020312 |
|
| LAPS | Cancellation because of no payment of annual fees |