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JP3300224B2 - Method for producing quartz-based doped glass - Google Patents
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JP3300224B2 - Method for producing quartz-based doped glass - Google Patents

Method for producing quartz-based doped glass

Info

Publication number
JP3300224B2
JP3300224B2 JP07105196A JP7105196A JP3300224B2 JP 3300224 B2 JP3300224 B2 JP 3300224B2 JP 07105196 A JP07105196 A JP 07105196A JP 7105196 A JP7105196 A JP 7105196A JP 3300224 B2 JP3300224 B2 JP 3300224B2
Authority
JP
Japan
Prior art keywords
base material
quartz
dopant
porous
doped glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP07105196A
Other languages
Japanese (ja)
Other versions
JPH09235130A (en
Inventor
成幸 三田地
善明 竹内
亮 長瀬
旭 熊谷
裕一 森下
知周 深田
健一 牟田
宏司 松浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
NTT Inc USA
Original Assignee
Nippon Telegraph and Telephone Corp
NTT Inc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, NTT Inc USA filed Critical Nippon Telegraph and Telephone Corp
Priority to JP07105196A priority Critical patent/JP3300224B2/en
Publication of JPH09235130A publication Critical patent/JPH09235130A/en
Application granted granted Critical
Publication of JP3300224B2 publication Critical patent/JP3300224B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01Manufacture of glass fibres or filaments
    • C03B37/012Manufacture of preforms for drawing fibres or filaments
    • C03B37/014Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/01413Reactant delivery systems
    • C03B37/01433Reactant delivery systems for delivering and depositing additional reactants as liquids or solutions, e.g. for solution doping of the porous glass preform
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01Manufacture of glass fibres or filaments
    • C03B37/012Manufacture of preforms for drawing fibres or filaments
    • C03B37/014Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/01446Thermal after-treatment of preforms, e.g. dehydrating, consolidating, sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Light Guides In General And Applications Therefor (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Manufacture, Treatment Of Glass Fibers (AREA)
  • Glass Compositions (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、コバルト(Co)等の
光吸収性遷移金属をドープして、光減衰器等に利用され
る石英系ドープガラスの製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a silica-doped glass which is doped with a light-absorbing transition metal such as cobalt (Co) and used for an optical attenuator or the like.

【0002】[0002]

【従来の技術】光ファイバのコア部分にコバルトのよう
な遷移金属をドープした遷移金属ドープファイバは、伝
送する光を吸収する効果を持つ。従って、このような光
減衰機能を利用した光減衰器への応用が期待されてい
る。このような光ファイバを製造するためには、光ファ
イバのコア内にコバルト等の遷移金属を高い濃度でドー
プする必要がある。しかしながら、ドープ原料となる遷
移金属の塩化物例えばCoCl2 等は常温付近では気化
しないため、光ファイバ製造に一般的に利用される火炎
加水分解法によるコア多孔質母材を製造する際に、ドー
プ原料を同時に添加することが困難である。
2. Description of the Related Art A transition metal-doped fiber in which a transition metal such as cobalt is doped in a core portion of an optical fiber has an effect of absorbing transmitted light. Therefore, application to an optical attenuator using such an optical attenuation function is expected. In order to manufacture such an optical fiber, it is necessary to dope a transition metal such as cobalt at a high concentration in the core of the optical fiber. However, since a transition metal chloride such as CoCl 2 as a dope raw material does not vaporize at around room temperature, when producing a core porous preform by a flame hydrolysis method generally used for optical fiber production, a dope is used. It is difficult to add raw materials at the same time.

【0003】このために、従来は、VAD法等によって
製造された多孔質母材を収縮率60%〜75%、かさ密
度0.5〜0.3g/cm3 ぐらいに一旦仮焼結する。そ
して遷移金属、例えばCoの塩化物等を溶かしたアルコ
ール溶液に、この多孔質母材を浸漬させる。その後、溶
液中から取り出した多孔質母材を乾燥し、溶液のアルコ
ール分を蒸発させて、多孔質母材中に遷移金属塩化物を
沈着させる。その後、これを焼結透明化すれば、遷移金
属をドープした石英系ドープガラスが製造される。
[0003] For this, conventionally, the porous preform produced by the VAD method or the like shrinkage ratio of 60% to 75%, once preliminary sintering to about bulk density 0.5~0.3g / cm 3. Then, the porous base material is immersed in an alcohol solution in which a transition metal, for example, a chloride of Co or the like is dissolved. Thereafter, the porous base material taken out of the solution is dried, and the alcohol content of the solution is evaporated to deposit a transition metal chloride in the porous base material. After that, if this is sintered and made transparent, a quartz-based doped glass doped with a transition metal is manufactured.

【0004】[0004]

【発明が解決しようとする課題】ところで、上記のよう
な従来の石英系ドープガラスの製造方法には次のような
解決すべき課題があった。図2に、乾燥工程における多
孔質母材の側面図を示す。この図に示すように、遷移金
属の塩化物が溶けたアルコール溶液にこの多孔質母材1
0を浸漬後、アルコールを蒸発させる場合、アルコール
はこの多孔質母材10の内部から外部に向かって移動し
矢印に示すようにして蒸発する。即ち、多孔質母材10
の内部に浸透した遷移金属元素を含んだアルコール溶液
は、多孔質母材10の表面に向かって順に移動し表面付
近で蒸発する。その結果、多孔質母材10の表面付近に
遷移金属元素の塩化物等が集中して残留しやすくなる。
例えば、Coをこの遷移金属として採用し上記の方法で
作成したガラスロッドを、よく知られたEPMA法を用
いて、半径方向にCo濃度分布を測定すると次のように
なる。
The above-described conventional method for producing a quartz-based doped glass has the following problems to be solved. FIG. 2 shows a side view of the porous preform in the drying step. As shown in this figure, this porous base material 1 was placed in an alcohol solution in which a transition metal chloride was dissolved.
When the alcohol is evaporated after immersion of 0, the alcohol moves from the inside of the porous base material 10 to the outside and evaporates as shown by the arrow. That is, the porous base material 10
The alcohol solution containing the transition metal element that has penetrated into the inside of the base material moves toward the surface of the porous base material 10 in order and evaporates near the surface. As a result, chlorides and the like of transition metal elements are likely to remain near the surface of the porous base material 10 in a concentrated manner.
For example, when a Co rod is used as the transition metal and the glass rod prepared by the above method is used to measure the Co concentration distribution in the radial direction by using the well-known EPMA method, the following result is obtained.

【0005】図3に、Coドープ分布のグラフを示す。
横軸はガラスロッドの径方向の位置を示し、縦軸はCo
含有率を%で表している。この図に示すように、実際に
はCoがコアの周辺部に集中して中心部は比較的低い一
定な濃度分布になっている。これでは、本来均一にCo
の濃度が分布している場合を想定して光ファイバの設計
を行っているのに対し、その誤差が大きくなる。しか
も、コアの表面付近にCoが高濃度で分布すると外表面
の近くに結晶化が生じ、時にはクラックが発生して製品
を不良にする。即ち、上記のような製造方法では、透明
ガラス中へドーパント元素を溶解した場合に得られる上
限値まで、そのドーパント濃度を高めることが難しいと
いう問題があった。
FIG. 3 shows a graph of Co doping distribution.
The horizontal axis shows the radial position of the glass rod, and the vertical axis shows Co
The content is expressed in%. As shown in this figure, Co is actually concentrated at the peripheral portion of the core, and the central portion has a relatively low concentration distribution. In this case, Co
Although the optical fiber is designed on the assumption that the density is distributed, the error becomes large. In addition, when Co is distributed at a high concentration near the surface of the core, crystallization occurs near the outer surface, and sometimes cracks occur to make the product defective. That is, the above-described manufacturing method has a problem that it is difficult to increase the dopant concentration to the upper limit obtained when the dopant element is dissolved in the transparent glass.

【0006】また、導波路の屈折率分布が中心部で大き
く、外周部ほど小さくなる単一モードファイバの場合に
は、ドーパントと光の相互作用が母材中心において最も
大きい。従って、コア内のドーパント濃度は均一である
か、あるいは中心が濃く外周部に向かうほど薄くなるよ
うな凸型であることが望ましい。このため、上記のよう
なこれと逆の凹型屈折率分布では、ドープしたCoの量
に比較して実質的に作用するCoの濃度が低くなる。更
に、ドーパントがCoである場合、でき上がった光減衰
器の波長依存性も比較的大きくなるという問題があっ
た。本発明は以上の点に着目してなされたもので、可能
な限り光ファイバの半径方向に均一なドーパント濃度分
布を与えるための石英系ドープガラスの製造方法を提供
することを目的とするものである。
In the case of a single mode fiber in which the refractive index distribution of the waveguide is large at the center and becomes smaller toward the outer periphery, the interaction between the dopant and light is greatest at the center of the base material. Therefore, it is desirable that the dopant concentration in the core be uniform or a convex shape in which the center is deeper and becomes thinner toward the outer periphery. Therefore, in the concave refractive index distribution opposite to the above, the concentration of Co that acts substantially becomes lower than the amount of Co doped. Further, when the dopant is Co, there is a problem that the wavelength dependence of the resulting optical attenuator is relatively large. The present invention has been made in view of the above points, and an object of the present invention is to provide a method for producing a silica-based doped glass for providing a uniform dopant concentration distribution in a radial direction of an optical fiber as much as possible. is there.

【0007】[0007]

【課題を解決するための手段】本発明の方法は、石英多
孔質製の母材をドーパント溶液に浸漬してその母材中に
ドーパントを含浸させる工程と、このドーパント含浸後
の母材を乾燥する工程と、乾燥後の母材を焼結する工程
とを備えた石英系ドープガラスの製造方法において、母
材を乾燥する工程後に、母材を1000℃以上1350
℃以下の温度範囲で仮焼結し、母材密度を0.4g/cm
3 以上1.2g/cm3 以下に高めた上で、この母材の外
周部分を取り除き、更に母材表面に対して研磨を施した
後に、その母材を焼結することを特徴とするものであ
る。
According to the method of the present invention, a base material made of porous quartz is immersed in a dopant solution to impregnate the base material with a dopant, and the base material after the dopant impregnation is dried. And a step of sintering the dried base material, wherein the base material is dried at a temperature of 1000 ° C. or higher after the step of drying the base material.
Temporary sintering in the temperature range below ℃, the base material density 0.4g / cm
After increasing to 3 to 1.2 g / cm 3 , the outer peripheral portion of the base material is removed, the base material surface is polished, and then the base material is sintered. It is.

【0008】[0008]

【作用】石英多孔質製の母材をドーパント溶液に浸漬し
て乾燥させた後、所定の温度範囲で仮焼結し、母材密度
を所定の範囲まで高めると、石英多孔質製の母材の強度
を適当なレベルまで高めることができる。その後表面を
研磨し表面付近のドーパントが高濃度の部分を削り落と
す。かさ密度が不足すればこの研磨の際スートが割れて
しまうし、かさ密度を高めすぎるとその段階でスートの
表面が結晶化しクラックが生じやすい。従って一定の条
件下熱処理をし研磨することで均一な濃度分布のコアが
得られる。
The quartz porous base material is immersed in a dopant solution and dried, and then temporarily sintered in a predetermined temperature range to increase the base material density to a predetermined range. To an appropriate level. Thereafter, the surface is polished to remove the high concentration portion of the dopant near the surface. If the bulk density is insufficient, the soot is broken during this polishing. If the bulk density is too high, the surface of the soot is crystallized at that stage and cracks are likely to occur. Therefore, a core having a uniform concentration distribution can be obtained by heat treatment and polishing under a certain condition.

【0009】[0009]

【実施例】以下、本発明を図の実施例を用いて詳細に説
明する。図1は、本発明の石英系ドープガラスの製造方
法実施例を示す説明図である。本発明においては、例え
ばこの図に示すような手順で、コアの断面から見て半径
方向にほぼ均一な濃度分布でコバルト等のドーパントが
ドープされているファイバを製造する。このため、まず
初めに図1(a)に示すように、よく知られたVAD法
によって石英多孔質製の母材3を製造する。バーナー2
からはその原料としてSiCl4 を毎分325cc、G
eCl4 を毎分40cc供給し、燃焼ガスとしてO2
毎分9リットル、H2 を毎分6.5リットル供給する。
更に反応制御ガスとしてArを毎分1.5リットル供給
し、火炎加水分解反応を生じさせる。こうして得られた
微粒子を、図に示すように矢印の方向に回転しながら引
き上げられる石英製のターゲット棒1上に連続的に堆積
させる。こうして得られた母材3の大きさは、例えば直
径72mm長さ290mmとなった。この工程を経て完成し
た母材3を、(b)に石英多孔質製の母材5というよう
に図示した。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the embodiments shown in the drawings. FIG. 1 is an explanatory view showing an embodiment of a method for producing a quartz-based doped glass of the present invention. In the present invention, a fiber doped with a dopant such as cobalt with a substantially uniform concentration distribution in the radial direction when viewed from the cross section of the core is manufactured by, for example, the procedure shown in FIG. Therefore, first, as shown in FIG. 1A, a quartz porous base material 3 is manufactured by a well-known VAD method. Burner 2
325 cc per minute of SiCl 4 as a raw material
eCl 4 is supplied at a rate of 40 cc / min, and 9 liters of O 2 and 6.5 liters of H 2 are supplied as combustion gases per minute.
Further, 1.5 liters of Ar is supplied per minute as a reaction control gas to cause a flame hydrolysis reaction. The fine particles thus obtained are continuously deposited on a quartz target rod 1 which is pulled up while rotating in the direction of the arrow as shown in the figure. The size of the base material 3 thus obtained was, for example, 72 mm in diameter and 290 mm in length. The base material 3 completed through this process is illustrated as a base material 5 made of porous quartz in FIG.

【0010】次に、図の(b)に示すようにして浸漬工
程を行うが、その前に石英多孔質製の母材5の微粒子を
固定するために簡単な焼結を行なう。その装置は図の
(c)に示すとおりで、設定温度を1320℃にし、
(a)の工程でできあがった石英多孔質製の母材5を毎
分200mmの速度で電気炉の上から下まで送る。ヒータ
8によってこれを加熱すると、収縮率70%、かさ密度
0.4g/cm3 の石英多孔質製の母材5が得られる。
Next, a dipping step is performed as shown in FIG. 1B, but before that, a simple sintering is performed to fix the fine particles of the porous quartz base material 5. The apparatus is set to a temperature of 1320 ° C. as shown in FIG.
The quartz porous base material 5 completed in the step (a) is sent from the top to the bottom of the electric furnace at a speed of 200 mm per minute. When this is heated by the heater 8, a porous quartz base material 5 having a shrinkage of 70% and a bulk density of 0.4 g / cm 3 is obtained.

【0011】次に、(b)に示す装置によって浸漬工程
を実施する。この容器7にはドーパントイオン溶液6が
入っている。ドーパントイオン溶液6は具体的にはCo
Cl 2 ・6H2 Oが4.5wt%溶けたメタノール溶液
から成る。この中に石英多孔質製の母材5を20時間浸
漬することによってドーパントを含浸させる。その後、
石英多孔質製の母材5を引き上げて自然乾燥させる。そ
して、乾燥後、図の(c)に示す電気炉によって設定温
度を1150℃にして加熱する。
Next, an immersion step is performed by using the apparatus shown in FIG.
Is carried out. The container 7 contains the dopant ion solution 6.
Is in. The dopant ion solution 6 is specifically Co
Cl Two ・ 6HTwo A methanol solution in which O is dissolved at 4.5 wt%
Consists of A quartz porous base material 5 is immersed therein for 20 hours.
Dipping impregnates the dopant. afterwards,
The quartz porous base material 5 is pulled up and air-dried. So
After drying, the temperature is set by an electric furnace shown in FIG.
Heat to a temperature of 1150 ° C.

【0012】こうして石英多孔質製の母材5を毎分5mm
の速度で電気炉の上から下まで送ると、収縮率約59
%、かさ密度約0.8g/cm3 の母材5が得られる。そ
の後、Co2 レーザを用いて石英多孔質製の母材5の外
周部を3mm程の厚みで削り取る。更にその母材5の外表
面を同じくCo2 レーザ等によって滑らかに研磨する。
最後に、図の(c)に示す電気炉を用いてHe(ヘリウ
ム)の雰囲気下で焼結を行いガラス化すると、半径方向
のCo濃度分布がほぼ一定の母材が得られる。
In this manner, the quartz porous base material 5 is
When sent from the top to the bottom of the electric furnace at a speed of
%, And a base material 5 having a bulk density of about 0.8 g / cm 3 is obtained. Thereafter, the outer peripheral portion of the porous quartz base material 5 is cut off to a thickness of about 3 mm using a Co 2 laser. Further, the outer surface of the base material 5 is also smoothly polished by a Co 2 laser or the like.
Finally, when sintering is performed in an atmosphere of He (helium) using an electric furnace shown in (c) of the figure and vitrification is performed, a base material having a substantially constant Co concentration distribution in the radial direction is obtained.

【0013】図4には、このような母材のCo濃度分布
を示す。図の横軸はコアの半径方向の位置を示し、縦軸
はCo含有率を%で示したものである。この図に示すよ
うに、コアの外表面近くのCoが高い濃度で分布してい
た部分は、母材の段階で削り取られ、中心から外周に向
かってほぼ均一な濃度の光ファイバが製造される。
FIG. 4 shows the distribution of Co concentration in such a base material. The horizontal axis in the figure shows the radial position of the core, and the vertical axis shows the Co content in%. As shown in this figure, the portion where Co was distributed at a high concentration near the outer surface of the core was scraped off at the stage of the base material, and an optical fiber having a substantially uniform concentration from the center to the outer periphery was manufactured. .

【0014】ここで、上記の乾燥工程後、一旦石英多孔
質製の母材5を仮焼結する温度範囲は1000℃以上1
350℃程度の温度範囲であることが望ましい。また、
この場合この仮焼結によって石英多孔質製の母材5のか
さ密度を0.4g/cm3 以上1.2g/cm3 程度に高め
る。このようにしたのは次の理由による。通常、石英多
孔質製の母材5は微粒子が互いに一部接触し、融着した
状態で形態を保っており、これを機械的に研磨しようと
すると、その時に加わる外力によって母材自体が割れて
しまうおそれがある。従って、このような研磨処理の前
に母材の補強が必要となる。そこで、本発明では研磨処
理の前に石英多孔質製の母材5のかさ密度を0.4g/
cm3 以上になるようにした。
Here, after the above-mentioned drying step, the temperature range for temporarily sintering the quartz porous base material 5 is 1000 ° C. or more and 1 ° C.
It is desirable that the temperature range is about 350 ° C. Also,
In this case it increased by the provisional sintering the bulk density of the base material 5 made of quartz porous to about 0.4 g / cm 3 or more 1.2 g / cm 3. This is done for the following reason. Usually, fine particles of the porous silica base material 5 are partially in contact with each other, and maintain a state in which the fine particles are fused together. If the fine particles are mechanically polished, the base material itself is broken by an external force applied at that time. There is a risk that it will. Therefore, it is necessary to reinforce the base material before such a polishing treatment. Therefore, in the present invention, the bulk density of the porous quartz base material 5 is set to 0.4 g / g before the polishing treatment.
cm 3 or more.

【0015】一方、もし石英多孔質製の母材のかさ密度
を1.2g/cm3 以上まで高めると、今度は母材の表面
が高い濃度のCoのために結晶化しクラックを生じるこ
とがある。このような理由からかさ密度を一定の範囲に
した後研磨を行うようにしている。
On the other hand, if the bulk density of the porous quartz base material is increased to 1.2 g / cm 3 or more, the surface of the base material may be crystallized due to the high concentration of Co and cracks may occur. . For this reason, the polishing is performed after the bulk density is within a certain range.

【0016】本発明は以上の実施例に限定されない。母
材5の表面を研磨するには、CO2レーザの他イオンエ
ッチングその他各種の機械的な研磨方法が採用できる。
また、ドーパントとしてはCo以外の遷移金属も採用で
き、更に遷移金属以外の希土類元素ドーパント、Al、
アルカリ金属、アルカリ土類金属等をドーパントとする
場合も同様に有効である。また、石英多孔質製ガラス母
材を製造する方法としては、VAD法の他、外付け法、
ゾルゲル法等によるものも採用できる。また上記のよう
な加工は光ファイバのコアだけでなくグラッドに対して
も実施が可能である。
The present invention is not limited to the above embodiment. In order to polish the surface of the base material 5, ion etching other than CO 2 laser and various other mechanical polishing methods can be adopted.
Further, as the dopant, a transition metal other than Co can be employed, and further, a rare earth element dopant other than the transition metal, Al,
The use of an alkali metal, an alkaline earth metal or the like as a dopant is similarly effective. In addition, as a method of manufacturing a quartz porous glass preform, in addition to the VAD method, an external method,
A sol-gel method can also be used. Further, the above-described processing can be performed not only on the core of the optical fiber but also on the clad.

【0017】[0017]

【発明の効果】以上説明した本発明の石英系ドープガラ
スの製造方法によれば、既知のドープ工程、乾燥工程、
焼結工程を介して石英多孔質製の母材を製造するとき、
その母材の外周部分を機械的な研磨等によって取り除く
ため、その半径方向にドーパント濃度分布が均一な母材
が得られる。しかも石英多孔質製の母材の研磨等を行う
前に、予めこれを一定の温度範囲で仮焼結し母材密度を
高めるので、研磨等の機械的な外力によって母材が割れ
るといったこともない。
According to the method for producing a quartz-based doped glass of the present invention described above, a known doping step, drying step,
When manufacturing a quartz porous base material through a sintering process,
Since the outer peripheral portion of the base material is removed by mechanical polishing or the like, a base material having a uniform dopant concentration distribution in the radial direction can be obtained. In addition, before polishing a quartz porous base material, the base material is pre-sintered in a certain temperature range to increase the base material density, so that the base material may be broken by mechanical external force such as polishing. Absent.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の石英系ドープガラスの製造方法を示す
各工程の正面図である。
FIG. 1 is a front view of each step showing a method for producing a quartz-based doped glass of the present invention.

【図2】従来の方法を説明するための多孔質母材の側面
図である。
FIG. 2 is a side view of a porous base material for explaining a conventional method.

【図3】従来のコアのCoドープ濃度分布を示すグラフ
である。
FIG. 3 is a graph showing a Co doping concentration distribution of a conventional core.

【図4】本発明のコアのCoドープ濃度分布を示すグラ
フである。
FIG. 4 is a graph showing a Co doping concentration distribution of a core according to the present invention.

【符号の説明】[Explanation of symbols]

3、5 石英多孔質製の母材 6 ドーパントイオン溶液 8 ヒータ 3, 5 quartz porous base material 6 dopant ion solution 8 heater

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI G02B 6/00 356 G02B 6/00 356A (72)発明者 長瀬 亮 東京都新宿区西新宿3丁目19番2号 日 本電信電話株式会社内 (72)発明者 熊谷 旭 神奈川県川崎市川崎区小田栄2丁目1番 1号 昭和電線電纜株式会社内 (72)発明者 森下 裕一 神奈川県川崎市川崎区小田栄2丁目1番 1号 昭和電線電纜株式会社内 (72)発明者 深田 知周 神奈川県川崎市川崎区小田栄2丁目1番 1号 昭和電線電纜株式会社内 (72)発明者 牟田 健一 神奈川県川崎市川崎区小田栄2丁目1番 1号 昭和電線電纜株式会社内 (72)発明者 松浦 宏司 神奈川県川崎市川崎区小田栄2丁目1番 1号 昭和電線電纜株式会社内 (56)参考文献 特開 昭59−146946(JP,A) 特開 平6−61552(JP,A) 特開 平7−333407(JP,A) 特開 平2−137742(JP,A) 特開 昭57−42549(JP,A) 特開 平9−142864(JP,A) 特開 平6−80434(JP,A) 特開 昭63−8706(JP,A) (58)調査した分野(Int.Cl.7,DB名) C03B 20/00 C03B 8/04 C03B 37/014 C03C 13/04 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification code FI G02B 6/00 356 G02B 6/00 356A (72) Inventor Ryo Nagase Nippon Telegraph and Telephone 3-19-2 Nishishinjuku, Shinjuku-ku, Tokyo Within Telephone Co., Ltd. (72) Asahi Kumagai 2-1-1, Sakae Oda, Kawasaki-ku, Kawasaki-shi, Kanagawa Prefecture Inside of Showa Electric Wire & Cable Co., Ltd. No. 1 Inside Showa Electric Wire & Cable Co., Ltd. (72) Inventor Chishu Fukada 2-1-1 Oda Sakae, Kawasaki-ku, Kawasaki City, Kanagawa Prefecture Inside 1 Showa Electric Wire & Cable Co., Ltd. 2-1-1, Sakae Showa Electric Wire & Cable Co., Ltd. (72) Koji Matsuura 2-1, 1-1 Odaei, Kawasaki-ku, Kawasaki-shi, Kanagawa Prefecture Showa Electric Wire & Cable Co., Ltd. In-house (56) References JP-A-59-146946 (JP, A) JP-A-6-61552 (JP, A) JP-A-7-333407 (JP, A) JP-A-2-137742 (JP, A) JP-A-57-42549 (JP, A) JP-A-9-142864 (JP, A) JP-A-6-80434 (JP, A) JP-A-63-8706 (JP, A) (58) (Int.Cl. 7 , DB name) C03B 20/00 C03B 8/04 C03B 37/014 C03C 13/04

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 石英多孔質製の母材をドーパント溶液に
浸漬してその母材中にドーパントを含浸させる工程と、
このドーパント含浸後の母材を乾燥する工程と、乾燥後
の母材を焼結する工程とを備えた石英系ドープガラスの
製造方法において、 前記母材を乾燥する工程後に、前記母材を1000℃以
上1350℃以下の温度範囲で仮焼結し、母材密度を
0.4g/cm3 以上1.2g/cm3 以下に高めた上で、 この母材の外周部分を取り除き、更に母材表面に対して
研磨を施した後に、その母材を焼結することを特徴とす
る石英系ドープガラスの製造方法。
A step of immersing a porous quartz base material in a dopant solution to impregnate the base material with a dopant;
In a method for producing a quartz-based doped glass comprising a step of drying the base material after impregnation with the dopant and a step of sintering the base material after drying, after the step of drying the base material, Temporary sintering in the temperature range of not less than 1 ° C. and not more than 1350 ° C. After increasing the density of the base material to 0.4 g / cm 3 or more and 1.2 g / cm 3 or less, the outer peripheral portion of the base material is removed. A method for producing quartz-based doped glass, comprising sintering a base material after polishing the surface.
JP07105196A 1996-03-01 1996-03-01 Method for producing quartz-based doped glass Expired - Fee Related JP3300224B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP07105196A JP3300224B2 (en) 1996-03-01 1996-03-01 Method for producing quartz-based doped glass

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07105196A JP3300224B2 (en) 1996-03-01 1996-03-01 Method for producing quartz-based doped glass

Publications (2)

Publication Number Publication Date
JPH09235130A JPH09235130A (en) 1997-09-09
JP3300224B2 true JP3300224B2 (en) 2002-07-08

Family

ID=13449347

Family Applications (1)

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Country Status (1)

Country Link
JP (1) JP3300224B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009224405A (en) 2008-03-13 2009-10-01 Fujikura Ltd Rare earth element-added optical fiber and method of manufacturing the same, and fiber laser

Also Published As

Publication number Publication date
JPH09235130A (en) 1997-09-09

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