JP3303507B2 - Mask for thin film formation - Google Patents
Mask for thin film formationInfo
- Publication number
- JP3303507B2 JP3303507B2 JP03361494A JP3361494A JP3303507B2 JP 3303507 B2 JP3303507 B2 JP 3303507B2 JP 03361494 A JP03361494 A JP 03361494A JP 3361494 A JP3361494 A JP 3361494A JP 3303507 B2 JP3303507 B2 JP 3303507B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- metal plate
- thin film
- hole
- element body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 23
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000002184 metal Substances 0.000 claims description 46
- 239000002245 particle Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 230000035515 penetration Effects 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 description 14
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 7
- 238000005452 bending Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 239000011324 bead Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 210000004392 genitalia Anatomy 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【0001】[0001]
【産業上の利用分野】 本発明は、スパッタ蒸着等の乾
式薄膜形成法において、素体表面に所定パターンの薄膜
を形成するために用いられる薄膜形成用マスクに関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming mask used for forming a thin film having a predetermined pattern on a surface of a body in a dry thin film forming method such as sputtering deposition.
【0002】[0002]
【従来の技術】 乾式薄膜形成法には、スパッタ蒸着,
真空蒸着,イオンプレーティング等がある。ここではス
パッタ蒸着による薄膜形成法を例にして説明する。2. Description of the Related Art Dry thin film formation methods include sputter deposition,
There are vacuum deposition, ion plating, and the like. Here, a method of forming a thin film by sputtering deposition will be described as an example.
【0003】スパッタ蒸着とは、高エネルギーの粒子を
飛散源(ターゲット)表面に照射すると、高エネルギー
の粒子が飛散源表面の構成原子と衝突し、その結果、飛
散源表面の構成原子を飛散源表面から蒸発させ、この蒸
発した飛散源表面の構成原子を、被蒸着物である素体の
表面に沈着させて蒸着膜を形成することである。この
際、スパッタ蒸着膜は素体の表面にほぼ一様に形成され
ることになる。[0003] Sputter deposition means that when high-energy particles are irradiated on the surface of a scattering source (target), the high-energy particles collide with constituent atoms on the surface of the scattering source. It is to evaporate from the surface and deposit the constituent atoms of the evaporated scattering source surface on the surface of the element as the object to be deposited to form an evaporation film. At this time, the sputter-deposited film is formed almost uniformly on the surface of the element body.
【0004】上述したスパッタ蒸着の方法を用いて、飛
散源である電極材料をスパッタ蒸着して電子部品の電極
を形成する方法がある。この方法を用いて電極を形成す
る際に使用する従来の薄膜形成用マスクについて、図
2,図3に基づいて説明する。There is a method of forming an electrode of an electronic component by sputter-depositing an electrode material, which is a scattering source, using the above-described sputter-deposition method. FIG. 1 shows a conventional thin film forming mask used when forming an electrode by using this method.
2 will be described with reference to FIG.
【0005】図2において、マスク1は、略四角形の金
属板からなり、その板厚方向に複数の円形の段付孔2を
有している。この段付孔2は、所定パターンである上部
孔2aと、上部孔2aより外形が大きい下部孔2bとか
らなる。下部孔2bは円板状の素体4が嵌入でき、位置
決めできる形状であり、上部孔2aは素体4上に被覆さ
れるスパッタ蒸着膜である電極5と同形状である。In FIG. 2 , a mask 1 is made of a substantially square metal plate and has a plurality of circular stepped holes 2 in the thickness direction. The stepped hole 2 includes an upper hole 2a having a predetermined pattern and a lower hole 2b having a larger outer shape than the upper hole 2a. The lower hole 2b has a shape in which the disc-shaped element 4 can be fitted and positioned, and the upper hole 2a has the same shape as the electrode 5 which is a sputter-deposited film coated on the element 4.
【0006】このマスク1の下部孔2bに素体4を嵌入
し、上部孔2aから素体4の表面が露出した状態で素体
4を位置決めする。この状態で電極材料をスパッタ蒸着
すると、マスク1で覆われていない素体4の表面に電極
材料が被覆され、スパッタ蒸着膜である電極5が形成さ
れる。尚、素体4の両表面に電極5を形成する場合、素
体4の両表面をマスク1で覆い、電極材料をスパッタ蒸
着することによって、両表面に同時に電極5を形成する
ことができる。The element body 4 is fitted into the lower hole 2b of the mask 1, and the element body 4 is positioned with the surface of the element body 4 exposed from the upper hole 2a. When the electrode material is sputter deposited in this state, the surface of the element body 4 not covered with the mask 1 is coated with the electrode material, and the electrode 5 which is a sputter deposited film is formed. When the electrodes 5 are formed on both surfaces of the element body 4, the electrodes 5 can be simultaneously formed on both surfaces by covering both surfaces of the element body 4 with the mask 1 and depositing an electrode material by sputtering.
【0007】ところが、スパッタ蒸着の際、素体4の表
面を覆うマスク1の上部孔2aの厚みT1が厚いと、蒸
着膜に被着陰部を形成し、図2に示すように、電極5の
膜厚は、上部孔2aの内周付近が漸次薄くなるという問
題点を有していた。[0007] However, during the sputter deposition, the thickness T1 of the upper hole 2a of the mask 1 covering the surface of the element body 4 is thick, to form a deposited genital deposition film, as shown in FIG. 2, the electrode 5 The film thickness has a problem that the thickness near the inner periphery of the upper hole 2a gradually decreases.
【0008】そこで、被着陰部を小さくするためには、
上部孔2aの厚みT1を薄くすればよく、このために、
図3に示すように、2枚の金属板を接合することにより
薄膜形成用マスク6を構成することが考えられる。[0008] Therefore, in order to reduce the size of the attached negative part,
What is necessary is just to make the thickness T1 of the upper hole 2a thin.
As shown in FIG. 3 , it is conceivable to form the thin film forming mask 6 by joining two metal plates.
【0009】図3において、マスク6は、略四角形のス
テンレス等からなる第1の金属板7と、金属板7に重ね
られた第2の金属板8と、その外周端にステンレスなど
からなる補強枠3をスポット溶接等により接合して構成
されている。In FIG. 3 , a mask 6 comprises a first metal plate 7 made of substantially rectangular stainless steel or the like, a second metal plate 8 superimposed on the metal plate 7, and a reinforcement made of stainless steel or the like at its outer peripheral end. The frame 3 is configured by joining by spot welding or the like.
【0010】第1の金属板7は、素体4を嵌入して位置
決めするための複数の円形の第1の貫通孔9(図3では
6個)を有している。第2の金属板8は、第1の貫通孔
9に対応して、素体4上にスパッタ蒸着による被膜を形
成するための所定パターンである円形の第2の貫通孔1
0(図3では6個)を有している。The first metal plate 7 has a plurality of circular first through holes 9 (six in FIG. 3 ) for fitting and positioning the element body 4. The second metal plate 8 corresponds to the first through-hole 9 and has a circular second through-hole 1 which is a predetermined pattern for forming a film by sputter deposition on the element body 4.
0 (six in FIG. 3 ).
【0011】[0011]
【発明が解決しようとする課題】 しかしながら、この
ようなマスク6においては、第1の金属板7の板厚T2
はマスク1の同部分と同じであるが、第2の金属板8の
板厚は、被着陰部が形成されないようにマスク1の同部
分T1よりも薄くしなければならない。このため、2層
の金属板7,8から構成されたマスク6は、全体の厚み
がマスク1の厚みより薄く、また、2枚の金属板を接合
したものであるから、マスク1より強度的に弱く、スパ
ッタ時の輻射熱による熱変形が大きくなる。したがっ
て、マスク6の第1の貫通孔9に嵌入して位置決めして
いる素体4がマスク6の第1の貫通孔9からずれて、電
極5の形状が所定パターン及び所定の位置に形成できな
いという問題点を有していた。However, in such a mask 6, the first metal plate 7 has a thickness T2.
Is the same as that of the mask 1, but the thickness of the second metal plate 8 must be thinner than that of the mask T 1 so as not to form a shadowed portion. Therefore, the mask 6 composed of the two metal plates 7 and 8 is thinner than the thickness of the mask 1 and is formed by joining two metal plates. And thermal deformation due to radiant heat at the time of sputtering increases. Therefore, the element body 4 fitted and positioned in the first through hole 9 of the mask 6 is displaced from the first through hole 9 of the mask 6, and the shape of the electrode 5 cannot be formed in a predetermined pattern and a predetermined position. There was a problem that.
【0012】本発明の目的は、上記問題点を解消すべく
なされたもので、マスクが素体を確実に位置決めし、被
着陰部を形成する金属板の厚みT1が薄く且つ曲げ強度
が強い薄膜形成用マスクを提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems, and a thin film having a thin and thick bending strength T1 of a metal plate forming a masking part by a mask for securely positioning a body. An object of the present invention is to provide a forming mask.
【0013】[0013]
【課題を解決するための手段】 そこで、本発明による
薄膜形成用マスクにおいては、飛散源からの飛散粒子に
よりマスクを介して素体表面に所定パターンの薄膜を形
成するための薄膜形成用マスクにおいて、薄膜形成され
る素体を位置決めするための第1の貫通孔を有する第1
の金属板と、前記所定パターンに対応する第2の貫通孔
を有する第2の金属板と、が接合されて構成され、前記
第1及び第2の金属板の少なくとも一方の金属板に貫通
孔を囲むように突起が形成され、前記突起は、前記少な
くとも一方の金属板と同一材料および同一厚みにて形成
されたものであることを特徴とする。Therefore, in a mask for forming a thin film according to the present invention, a thin film forming mask for forming a thin film of a predetermined pattern on the surface of an element body through scattered particles from a scattering source through a mask is provided. A first through-hole for positioning a body on which a thin film is to be formed;
And a second metal plate having a second through-hole corresponding to the predetermined pattern are joined together, and penetrated through at least one of the first and second metal plates.
Projections so as to surround the hole is formed, said projection, said small
Formed with the same material and thickness as at least one metal plate
Characterized in der Rukoto those.
【0014】[0014]
【作用】 すなわち、本発明では、金属板に突起を設け
ることにより金属板の曲げ強度を板厚の曲げ強度以上に
高めることができる。According to the present invention, by providing the metal plate with the projections, the bending strength of the metal plate can be increased to the bending strength of the plate thickness or more.
【0015】[0015]
【実施例】 以下に、本発明の一実施例を図1にもとづ
いて説明する。但し、前述の従来例と同一部分について
は、同一の符号を付し、詳細な説明を省略する。Embodiment An embodiment of the present invention will be described below with reference to FIG. However, the same parts as those in the above-described conventional example are denoted by the same reference numerals, and detailed description thereof will be omitted.
【0016】図1において、マスク20は、第1の金属
板7と第2の金属板21と、その外周端に必要に応じて
補強枠3を接合して構成されている。In FIG. 1, the mask 20 is composed of a first metal plate 7, a second metal plate 21, and a reinforcing frame 3 joined to the outer peripheral end thereof as required.
【0017】第2の金属板21は、第1の金属板7と略
同形状の大きさのステンレス等からなり、第1の金属板
7に設けた第1の貫通孔9に対応して、素体4上にスパ
ッタ蒸着による薄膜を形成するための所定パターンであ
る円形の第2の貫通孔22(図1では6個)を備える。
そして、第2の金属板21全体の第2の貫通孔22を囲
むように、格子状等にビード加工により断面が凸状の突
起23を設ける。The second metal plate 21 is made of stainless steel or the like having substantially the same size as the first metal plate 7, and corresponds to the first through-hole 9 provided in the first metal plate 7. A circular second through hole 22 (six in FIG. 1) having a predetermined pattern for forming a thin film by sputter deposition on the element body 4 is provided.
Then, a projection 23 having a convex cross section is provided by bead processing in a lattice shape or the like so as to surround the second through hole 22 of the entire second metal plate 21.
【0018】マスク20は、上述の第1の金属板7と第
2の金属板21を、第1の貫通孔9と第2の貫通孔22
とがほぼ同心円状に位置してスポット溶接等で接合し、
更に第1の金属板7と第2の金属板21の外周端に補強
枠3をスポット溶接等により接合して構成されている。The mask 20 is formed by combining the first metal plate 7 and the second metal plate 21 with the first through hole 9 and the second through hole 22.
Are located almost concentrically and joined by spot welding, etc.
And is configured further reinforcing frame 3 are joined by spot welding or the like with the first metal plate 7 to the second metal plate 2 1 of the outer peripheral edge.
【0019】尚、突起23の目的がマスク20の曲げ強
度を高めるためであるから、突起23を第2の金属板2
1に設けることに限定するものでなく、第1の金属板7
に設けてもよく、または、第1の金属板7及び第2の金
属板21の両方に設けてもよいものである。Since the purpose of the projections 23 is to increase the bending strength of the mask 20, the projections 23 are formed on the second metal plate 2.
The first metal plate 7 is not limited to the first metal plate 7.
May be provided on both the first metal plate 7 and the second metal plate 21.
【0020】また、突起23の形状は図1に示した形状
に限定されるものでなく、断面がV字状など金属板の曲
げ強度が増す形状であれば何でもよい。Further, the shape of the projection 23 is not limited to the shape shown in FIG. 1, but may be any shape such as a V-shaped cross section as long as the bending strength of the metal plate increases.
【0021】ここで、第1及び第2の金属板に厚さ0.
5mmのステンレスの金属板を用いて、従来例によるマ
スク6及び本実施例によるマスク20をそれぞれ作成し
て、素体4上へのスパッタ蒸着に1000回使用した。
この際、マスク6,20が熱変形をして、マスク6,2
0から素体4がずれた、不良発生回数の比較結果を表1
に示す。Here, the first and second metal plates have a thickness of 0.1 mm.
The mask 6 according to the conventional example and the mask 20 according to the present example were formed using a 5 mm stainless steel metal plate, and were used 1000 times for sputtering deposition on the element body 4.
At this time, the masks 6, 20 undergo thermal deformation, and the masks 6, 2
Table 1 shows a comparison result of the number of failure occurrences in which the element body 4 was shifted from 0.
Shown in
【0022】[0022]
【表1】 [Table 1]
【0023】表1からも明らかなように、同一の材質及
び厚みの金属材料から作成されたマスクでも、本発明に
よる突起23を有するマスク20では、スパッタ時の熱
変形が小さく、マスク20から素体4がずれる頻度が少
なくなった。As is clear from Table 1, even with a mask made of a metal material having the same material and thickness, the mask 20 having the projections 23 according to the present invention has a small thermal deformation during sputtering, The frequency with which the body 4 shifts has decreased.
【0024】以上、本発明の実施例では、素体4及び電
極が円形であり、これに合わせてマスク20の第1及び
第2の貫通孔を円形で示したが、これら第1及び第2の
貫通孔は、円形に限定されるものでなく、素体及び電極
形状に合わせ適切な形状にしてもよいものである。ま
た、マスク20の全体の形状は四角に限定されるもので
なく円形等適宜所定の形状にすることが可能である。更
に、マスク20の第1及び第2の貫通孔の数は6個に限
定されるものでなく、適宜増減してもよいものである。As described above, in the embodiment of the present invention, the element body 4 and the electrode are circular, and the first and second through-holes of the mask 20 are indicated by circles in accordance with this. The first and second through-holes are not limited to circular shapes, but may have an appropriate shape according to the element body and the electrode shape. Further, the entire shape of the mask 20 is not limited to a square, but may be a predetermined shape such as a circle. Furthermore, the number of the first and second through holes of the mask 20 is not limited to six, but may be increased or decreased as appropriate.
【0025】[0025]
【発明の効果】 以上述べたように、本発明による薄膜
形成用マスクでは、金属板に貫通孔を囲むように突起を
設けることにより金属板の曲げ強度を板厚の曲げ強度以
上に高めることができる。したがって、金属板の厚みを
薄くすることができ、被着陰部が少ない電極が形成で
き、且つ、スパッタ蒸着に伴う発熱に対して熱変形が小
さいため、素体がマスクからずれることが減少し、素体
上への電極形成が安定してできるようになった。また、
熱変形に対するマスクの寿命が永くなった。As described above, in the mask for forming a thin film according to the present invention, the bending strength of the metal plate can be increased to the bending strength of the plate thickness or more by providing the metal plate with the projection surrounding the through hole. it can. Therefore, it is possible to reduce the thickness of the metal plate, to form an electrode with a small number of hidden parts, and to reduce heat deformation due to heat generated by sputter deposition, so that the element body is less likely to be displaced from the mask, Electrodes can be stably formed on the element body. Also,
The life of the mask against thermal deformation is extended.
【図1】 本発明に係る薄膜形成用マスクの一実施例を
示し,(a)がその上面図であり、(b)がそのA−A
線における部分断面図で、素体の片面にマスクを嵌入し
た状態を示す。FIG. 1 shows an embodiment of a mask for forming a thin film according to the present invention, (a) is a top view thereof, and (b) is an AA thereof.
FIG. 4 is a partial cross-sectional view taken along a line, showing a state where a mask is fitted on one surface of the element body.
【図2】 一般的なスパッタ蒸着を説明するための薄膜
形成用マスク及び素体を示す要部断面側面図である。FIG. 2 is a cross-sectional side view of a main part showing a mask for forming a thin film and a body for explaining general sputter deposition.
【図3】 従来の薄膜形成用マスクを示し,(a)がそ
の上面図であり、(b)がそのB−B線における部分断
面図で、素体の片面にマスクを嵌入した状態を示す。3A and 3B show a conventional mask for forming a thin film, wherein FIG. 3A is a top view thereof, and FIG. 3B is a partial cross-sectional view taken along a line BB of FIG. .
4 素体 7 第1の金属板 9 第1の貫通孔 20 薄膜形成用マスク 21 第2の金属板 22 第2の貫通孔 23 突起 Reference Signs List 4 element body 7 first metal plate 9 first through hole 20 thin film forming mask 21 second metal plate 22 second through hole 23 protrusion
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) C23C 14/00 - 14/58 C23C 16/00 - 16/56 H01L 21/205 H05K 1/02 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) C23C 14/00-14/58 C23C 16/00-16/56 H01L 21/205 H05K 1/02
Claims (1)
して素体表面に所定パターンの薄膜を形成するための薄
膜形成用マスクにおいて、薄膜形成される素体を位置決
めするための第1の貫通孔を有する第1の金属板と、前
記所定パターンに対応する第2の貫通孔を有する第2の
金属板と、が接合されて構成され、前記第1及び第2の
金属板の少なくとも一方の金属板に貫通孔を囲むように
突起が形成され、前記突起は、前記少なくとも一方の金
属板と同一材料および同一厚みにて形成されたものであ
ることを特徴とする薄膜形成用マスク。1. A thin film forming mask for forming a thin film of a predetermined pattern on a surface of a body through a mask by scattered particles from a scattering source, a first penetration for positioning a body to be formed into a thin film. A first metal plate having a hole and a second metal plate having a second through hole corresponding to the predetermined pattern are formed by joining, and at least one of the first and second metal plates is formed. A projection is formed on the metal plate so as to surround the through hole, and the projection is formed on the at least one metal.
A thin-film forming mask formed of the same material and the same thickness as the metal plate .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03361494A JP3303507B2 (en) | 1994-03-03 | 1994-03-03 | Mask for thin film formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03361494A JP3303507B2 (en) | 1994-03-03 | 1994-03-03 | Mask for thin film formation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07243021A JPH07243021A (en) | 1995-09-19 |
| JP3303507B2 true JP3303507B2 (en) | 2002-07-22 |
Family
ID=12391341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03361494A Expired - Fee Related JP3303507B2 (en) | 1994-03-03 | 1994-03-03 | Mask for thin film formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3303507B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005105406A (en) * | 2003-09-10 | 2005-04-21 | Nippon Seiki Co Ltd | Evaporation mask |
-
1994
- 1994-03-03 JP JP03361494A patent/JP3303507B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07243021A (en) | 1995-09-19 |
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