JP3305151B2 - Image display device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image display device,
In particular, the present invention relates to a flat type image display device using a cold cathode electron source.

[0002]

2. Description of the Related Art Conventionally, as a flat type image forming apparatus using a cold cathode electron source, an apparatus having a cross section shown in FIG. 9 has been known (Japanese Patent Laid-Open No. 2-299136).

[0003] This image forming apparatus uses a cold cathode electron source called a surface conduction electron-emitting device.
An electron-emitting device 25 (consisting of electrodes 22 and 23 and an electron-emitting portion 24 formed between the electrodes) is formed thereon, and a face plate 30 arranged opposite to the substrate 21 is provided on an inner surface of a glass plate 27. A phosphor screen 28 is formed. In a color image forming apparatus, after a black conductive material 31 and a fluorescent material 32 called a black stripe or the like as shown in FIG. 8 are patterned on a glass plate 27, both the black stripe 31 and the fluorescent material 32 are formed. Metal back 29 is formed so as to cover. The purpose of providing the black stripe is to make the color separation etc. inconspicuous by making the painted portions between the phosphors 32 of the three primary color phosphors necessary for the color phosphor screen, and to make the phosphor screen 28 prevent external light. This is to prevent a decrease in contrast caused by reflection.

The purpose of the metal back 29 is to prevent charges (electrons) from accumulating in the phosphor 32, whose specific resistance is generally as high as 10 ¹⁰ to 10 ¹² Ω · cm, to reduce the potential, and to reduce the voltage for accelerating the electron beam. It acts as an electrode for applying the voltage, improves the brightness by mirror-reflecting light emitted from the phosphor toward the inner surface of the device, and protects the phosphor 32 from damage due to negative ion collision. Al is usually used as a material suitable for the above purpose. The metal back 29 is formed by vacuum mounting of Al after a process called filming (coating an organic film on the black stripe 31 and the phosphor 32) after forming the pattern of the black stripe 31 and the phosphor 32. Although the film is completed by baking and removing the film, the strength of the phosphor screen 28, particularly the metal back 29 after the metal back treatment is weak enough to peel off with a finger.

In order to keep the substrate 21 on which the electron-emitting devices 25 are formed and the face plate 30 at a substantially constant interval with respect to the pressure from the atmosphere, a plurality of atmospheric pressure-resistant spacers 26 are arranged.

Here, the surface conduction electron-emitting device used as the electron-emitting device 25 is one of electron sources called cold cathode electron sources with respect to thermionic electron sources.

A field emission type (hereinafter referred to as FE) is used as a cold cathode electron source.
Type), metal / insulating layer / metal type (hereinafter abbreviated as MIM type), surface conduction electron-emitting devices, and the like.

As an example of the FE type, W. P. Dyke
& W. W. Dolan, "Field emissi
on ", Advance in Electron P
physics, 8, 89 (1956) and C.I. A. Spi
ndt, "Physicalproperties o
f thin-film field emissio
n cathodes with mollybdenu
m cones ", J. Appl. Phys., 47,
5248 (1976) and the like are known.

Examples of the MIM type include C.I. A. Mea
d, “operation of tunnel-em
issue devices ", J. Appl. Ph.
ys. , 32, 646 (1961).

Examples of the surface conduction electron-emitting device include:
M. I. Elinsin, RadioEng. Elec
Tron Phys. , 10, 1290, (1965)
Etc.

The surface conduction electron-emitting device utilizes the phenomenon that electron emission occurs when a current flows through a small-area thin film formed on a substrate in parallel with the film surface.

As the surface conduction electron-emitting device, a device using a SnO ₂ thin film by Erinson et al., Au
By a thin film [G. Dittmer: "Thin S
Solid Films ", 9, 317 (1972)],
In ₂ O ₃ / SnO ₂ by thin film [M. Hartw
ell and C.I. G. FIG. Fonstad: "IEEE
Trans. ED Conf. ", 519 (197
5)], using a carbon thin film [Hisashi Araki et al .: Vacuum,
26, No. 1, p. 22 (1983)]. There is another example of a surface conduction electron-emitting device using fine particles proposed by the present applicant (USP 506).
No. 6883). These surface conduction electron-emitting devices have features such as a simple device structure and a high electron emission response speed.

[0013]

However, in the above conventional example, the anti-atmospheric pressure spacer 26 is disposed in direct contact with a portion of the inner surface of the face plate 30 where the phosphor 32 is not provided (black stripe 31). However, even if the spacer is misaligned or deformed even a little, the phosphor screen 28 formed on the inner surface of the face plate 30, particularly the metal back 29, is damaged, and these spacers are separated or a pressure resistance failure occurs. There was a problem.

The spacer 26 and the face plate 3
In some cases, the electrical connection with zero is insufficient, and the electric field changes locally, which may disturb the desired trajectory of the electron beam emitted from the electron-emitting device.

Further, the electrical connection between the spacer 26 and the face plate 30 is insufficient, and the spacer 2
The instability of connection due to a displacement or the like of 6 caused an unexpected discharge, particularly because a high voltage for electron acceleration was applied to the face plate.

As described above, both the insufficient and unstable electrical connection between the spacer and the face plate are
This is a cause and problem of making it difficult to obtain a stable and reliable image display device.

The present invention solves the above-mentioned conventional problems by preventing the atmospheric pressure-resistant spacer from damaging the phosphor screen on the inner surface of the face plate, particularly the metal back, and stabilizing the electrical connection between the spacer and the face plate. It is an object of the present invention to provide an image display device that can solve the problem and obtain a stable image over a long period.

[0018]

SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a substrate on which an electron-emitting device is disposed, a substrate disposed opposite to the substrate, and an electron-emitting device. A face plate having on its inner surface a phosphor for forming an image upon irradiation of the electrons and an electrode for accelerating electrons to be irradiated on the phosphor, and a distance between the substrate and the face plate with respect to atmospheric pressure. In the image display device having at least a spacer for holding, the spacer is fixed to a portion where no phosphor is present on the inner surface of the face plate via fixing means , and the spacer is electrically connected to the acceleration electrode. Connected by conducting means
It is in, is that it is formed in the image display apparatus according to claim.

According to the present invention, at the contact portion between the spacer and the phosphor screen on the inner surface of the face plate, no displacement occurs and the phosphor screen and the metal back are not damaged. Discharge or the like due to back peeling is less likely to occur.

In addition, the electric field changes smoothly at the contact portion between the spacer and the inner surface of the face plate, and the contact portion does not shift due to its structure, so that the electrical continuity becomes unstable. Is also eliminated, the orbit of the electron beam is stabilized, and a stable image can be obtained for a long period of time.
An image display device with high reliability is obtained.

[0021]

The present invention will be described below with reference to examples.

[Embodiment 1] In this embodiment, an image display device as shown in FIG. 1 is manufactured.

In FIG. 1, 1 is a glass substrate, 2 is an element electrode composed of an element electrode element section 4 and an element electrode wiring section 3, and 5 is an electron emission section. Reference numeral 10 denotes a face plate in which a fluorescent screen 8 composed of a phosphor 13, a black stripe 15, and a metal back 16 is formed on the inner surface of a glass substrate 9.
Is a spacer.

FIG. 2 is an enlarged view of the electron-emitting device in this embodiment. In FIG. 2, reference numeral 14 denotes a thin film for forming an electron-emitting portion formed between a pair of device electrode device portions 4.

FIG. 3 is a plan view of the inner surface of the face plate 10. In FIG. 3, the spacer junction 12 is formed in a stripe shape so as to overlap with the black stripe 15 formed between the red (R), green (G), and blue (B) phosphors 13.

Next, a method of manufacturing the present apparatus will be described.

(1) After the glass substrate 1 was sufficiently washed with an organic solvent, a device electrode 2 made of Ni having a thickness of 1000 ° was formed on the surface of the substrate 1 (see FIGS. 1 and 2). At this time, a plurality of wiring portions 3 are formed along a direction (X direction in the drawing) orthogonal to the phosphor stripe on the face plate side.
The element section 4 is formed so as to be electrically connected to each of a pair of adjacent wiring sections 3 among the plurality of wiring sections 3 and to face each other at an interval of 3 μm (indicated by L1 in FIG. 2). A plurality of samples were produced in the direction (X direction) along No. 3.

(2) Organic palladium (Okuno Pharmaceutical Co., Ltd.)
After applying a solution containing ccp-4230), 300
C. for 10 minutes to give palladium oxide (Pd
O) A fine particle film made of fine particles was formed and subjected to patterning by etching or the like, and a thin film 14 for forming an electron-emitting portion was provided between each element electrode element portion 4 (see FIG. 2). Here, the width (width of the element) W of the electron-emitting-portion-forming thin film 14 is 3
The thickness was set to approximately 00 μm, and it was arranged at a substantially central portion between the device electrodes 4. The thickness of the electron-emitting-portion-forming thin film 14 is 1
00 °, and the sheet resistance was 5 × 10 ⁴ Ω / □. Note that the fine particle film described here is a film in which a plurality of fine particles are aggregated, and has a fine structure not only in a state in which the fine particles are individually dispersed and arranged, but also in a state in which the fine particles are adjacent to each other or overlapped (island shape) ), And the particle size refers to the diameter of the fine particles whose particle shape can be recognized in the above state.

(3) Next, a voltage is applied between the device electrode element portions 4 and the electron emission portion forming thin film 14 is subjected to an energizing process (referred to as a forming process), so that the electron emission portion 5 is formed in the device electrode device portion 4 An electron-emitting device was completed in between.

(4) Next, a method of manufacturing the face plate 10 will be described.

After the glass substrate 9 is thoroughly washed with hydrofluoric acid or the like, the black stripes 15 are formed by photolithography.
(See FIG. 3). The material of the black stripe 15 was mainly composed of graphite. Thereafter, the CRT is repeated, in which the three primary color phosphors 13 are mixed with a resist one by one and applied in a slurry form, and then developed and fixed at a predetermined position.
A color phosphor layer (the phosphor 13 and the black stripe 15 are collectively referred to as a combination) was produced by a slurry method generally used in (1). The thickness of the phosphor 13 is 20 to 30
A good coating state without unevenness or peeling was obtained at μm.
Note that both the black stripe and the phosphor can be produced by printing, and in this case, the material of the black stripe may be a glass component (black).

(5) Next, after performing a smoothing process on the surface of the color fluorescent layer, which is called filming, the black stripe 15 of the spacer junction 12 is covered with a metal mask, and Al is deposited by vacuum evaporation to a thickness of approximately 2000 mm. Then, a metal back 16 was formed by forming a pattern on the inner surface side of the color fluorescent layer, removing the metal mask, and patterning. After that, the filming film is fired to complete the metal back 16. As described above, the phosphor 13, the black stripe 15, and the metal back 16 constitute the phosphor screen 8.

The width W1 of the black stripe at the spacer junction 12 is equal to the width 10 of the normal black stripe 15.
0 μm was set to 300 μm from the necessity of patterning.

(6) Next, the joining (fixing) between the spacer 7 and the face plate 10 will be described in detail with reference to FIG.

As described above, the metal back 16 is patterned and the frit glass 17 is applied to a portion where the black stripe 15 is exposed by a dispenser with a width of 100 μm and a thickness of 10 μm. Spacer 7 (width W2 is 200 μm, Z
The height in the direction is 4 mm, and the length is determined to be an appropriate length depending on the apparatus, the arrangement of the spacers, etc.), and fixed by firing at 450 ° C. for 10 minutes or more.

Next, the conductive layer 1 is connected by a spray method or the like so that the metal back 16 and the side wall surface of the spacer 7 are connected.
8 was formed.

(7) The substrate 1 on which the electron-emitting device is manufactured as described above, and the face plate 10 having a plurality of spacers 7 fixed on the inner surface are arranged to face each other via a side wall (not shown). Frit glass was applied to the joint between the plate 10, the side wall, and the substrate 1, and sealed by baking at 400 ° C. to 500 ° C. for 10 minutes or more in the air or a nitrogen atmosphere.

(8) The atmosphere in the glass envelope (comprised of the substrate 1, the side wall, and the face plate 10) completed as described above is exhausted by a vacuum pump through an exhaust pipe (not shown). After reaching an appropriate vacuum degree, the exhaust pipe (not shown) was welded at a degree of vacuum of about 10 ^-6 Torr by heating with a gas burner, and the envelope was sealed.

(9) Finally, a getter process was performed to maintain the degree of vacuum after sealing. In this method, a getter (not shown) disposed at a predetermined position in an image forming apparatus is heated by a heating method such as resistance heating or high-frequency heating immediately before or after sealing to form a deposited film. Processing. The getter usually contains Ba or the like as a main component, and maintains the degree of vacuum by the adsorption action of the deposited film.

The structure described above is a schematic structure necessary for manufacturing an image display device.
The detailed part is not limited to the contents of this embodiment,
It is appropriately selected so as to be suitable for the use of the image display device.

In the image display device of the present embodiment manufactured as described above, no displacement occurs at the contact portion between the spacer and the inner surface of the face plate, and the fluorescent screen and the metal back are not damaged. Surface damage,
Discharge and the like due to peeling of the metal back were difficult to occur.

In addition, the electric field changes smoothly at the contact portion between the spacer and the inner surface of the face plate, and the contact portion does not shift due to its structure, so that the electrical continuity becomes unstable. As a result, the trajectory of the electron beam was stabilized, and a stable image could be displayed for a long period of time.

[Embodiment 2] The method of manufacturing an electron-emitting device on a substrate and the configuration of the entire apparatus according to this embodiment are the same as those in Embodiment 1, and will not be described.

This embodiment is different from the first embodiment only in the joint between the spacer and the face plate, and will be described with reference to FIG.

In this embodiment, the phosphor 1 is placed on the glass substrate 9.
After the formation of the black stripe 15 and the black stripe 15, the black stripe 15 of the spacer junction 12 is covered with a metal mask, a filming film is applied by a spray method, and the metal mask is removed to pattern the filming film. Subsequently, Al is deposited to form a metal back 16.

Next, a conductive frit glass 19 is applied from above the metal back 16 of the spacer joint 12 by a dispenser, and the spacer 7 is brought into contact therewith, and the frit glass is baked at 400 to 500 ° C. for 10 minutes or more. By doing so, the spacer 7 was fixed. As the conductive frit glass 19, frit glass having a volume resistance of about 10 to the 10th power was used. However, if a lower resistance was required, a conductive material such as a metal could be mixed.

In this embodiment, since the filming film is patterned instead of the metal back 16, there is an advantage that the patterning can be performed in the air, and the black stripe 15 of the spacer junction 12 and the metal back 16 are interposed between the filming film. Since it is in direct contact with the metal back, it has sufficient strength so that it does not peel off even when conductive frit glass is applied to the metal back with a dispenser or the like. The electrical connection between the spacer and the metal back was made simultaneously, and the same effect as in Example 1 was obtained with a simpler manufacturing method.

[Embodiment 3] This embodiment is also different from Embodiment 1 only in the joint between the spacer and the face plate.
This will be described with reference to FIG.

In this embodiment, the phosphor 1 is placed on the glass substrate 9.
3 and the black stripe 15 are formed, a conductive frit glass 19 is applied on the black stripe 15 of the spacer junction 12, and the frit glass 19 is coated with a metal mask or the like, and a filming film is formed by a spray method. The coating and the removal of the metal mask are performed to pattern the filming film. Subsequently, a metal back 16 is formed by vapor deposition of Al, and then the filming film is baked and removed. In this embodiment, calcination usually performed at about 400 ° C. is performed. By performing the heating at the temperature, the metal back (Al) 16 at the spacer abutting portion becomes frit glass 1 in the firing step.
9, the spacer joint 12 having a structure in which the conductive frit glass is exposed is obtained.

Specifically, the firing of the filming film is performed by
Performed at 50 ° C. for about 1 hour.

In this embodiment, the electrical connection between the metal back 16 and the spacer 7 can be easily performed, and the metal back (Al) is melted in the frit glass 19, so that the electrical connection can be easily reduced in resistance. The same effect as in the previous embodiment was obtained.

Embodiment 4 In this embodiment, as shown in FIG. 7, a transparent electrode 20 made of ITO was first formed on almost the entire inner surface of the glass substrate 9.

A phosphor 13 and a black stripe 15 are formed thereon, and a metal back 16 patterned after filming is manufactured as in the first embodiment.

However, in this embodiment, the spacer joint 12
Is such that the transparent electrode 20 and the spacer 7 are electrically connected.

More specifically, the black stripe 15 is formed of graphite having conductivity, and a conductive frit glass 19 is applied thereon to form the spacer joint 12. In the present embodiment, the conductive frit glass was applied on graphite with small light reflection in consideration of the contrast of the image.However, in some cases, the graphite black stripe was omitted, and a black conductive frit glass was used. May be used.

The same potential is applied to the transparent electrode 20 and the metal back 16 by conducting them outside the image display area.

In this embodiment, the spacer 7 and the electrode (metal back 16 and transparent electrode 2) to which the electron acceleration voltage is applied are applied.
Since the electrical continuity with 0) was further improved, the electron trajectory was particularly stabilized, and an image display device free from electric discharge was obtained.

[Embodiment 5] In this embodiment, FIG.
As shown in the surface of the spacer base material 41, 10 ⁵ -
Semiconductive film 42 having a surface resistance of 10 ¹² [Ω / □]
Was formed to form the spacer 7.

Specifically, on a spacer base material 41 made of soda lime glass, tin oxide having a thickness of 1000
The film was formed in an argon / oxygen atmosphere by ion plating using an electron beam method. At this time, the surface resistance of the semiconductive film 42 was about 10 ⁹ [Ω / □].

In addition, examples of the spacer substrate 41 include quartz glass, glass having a reduced impurity content such as Na, and ceramic members such as alumina.
It can be appropriately used in consideration of the fact that the coefficient of thermal expansion is close to that of the substrate 1 for manufacturing the element, the glass plate 9 for the face plate, and the like.

The material of the semiconductive film 42 may be, for example, silicon or germanium, in addition to the above-mentioned tin oxide.
Group semiconductors, compound semiconductors such as gallium arsenide, oxide semiconductors such as nickel oxide and zinc oxide, or impurity semiconductors obtained by adding a small amount of impurities to the above various semiconductors were formed into an amorphous state, a polycrystalline state, or a single crystal state. And the like. As a method for forming the semiconductive film 42, a method using a vacuum film forming method such as a vacuum evaporation method, a sputtering method, a chemical vapor deposition method, or a method of applying and baking an organic solution or a dispersion solution by dipping or using a spinner. And the like, which are based on a coating method comprising a step of performing the above, and are appropriately selected according to the target material.

As described above, the base material 41 is
The fixing method of the spacer 7 formed by coating with
Is the same as

That is, the frit glass 17 is applied with a dispenser to a portion having a width of 100 μm on a portion where the metal back 16 is patterned and the black stripe 15 is exposed.
m, a thickness of 10 μm, and then a spacer 7 (width W
2 is 200 μm, height 4 mm in Z direction, thickness 1000
錫 tin oxide is deposited on the surface)
It was fixed by firing at 450 ° C. for 10 minutes or more.

Next, a conductive layer 18 was formed by a spray method or the like so that the metal back 16 and the side wall surface of the spacer 7 (covered with a semiconductive film of tin oxide) were connected.

In this embodiment, the contact between the spacer and the inner surface of the face plate does not cause a shift in the contact portion due to its structure. Therefore, the image display surface is damaged, and the discharge due to the metal back peeling or the like is prevented. Example 1 that hardly occurs
The same effect as described above was obtained.

The surface of the spacer is covered with a semiconductive film, and is electrically connected to the metal back 16 on the inner surface of the face plate. Since unexpected charges such as ions and ions do not stay on the spacer surface,
The orbit of the electron beam was stabilized, and a stable image could be displayed for a long time.

[Embodiment 6] In this embodiment, as in the case of the embodiment 5, the spacer 7 is formed on the surface of the
A structure in which a semiconductive film 42 having a surface resistance of ⁵ to 10 ¹² [Ω / □] was formed was used.

Specifically, tin oxide having a thickness of 1000 ° is formed on a spacer base material 41 made of soda lime glass.
The film was formed in an argon / oxygen atmosphere by ion plating using an electron beam method. At this time, the surface resistance of the semiconductive film 42 was about 10 ⁹ [Ω / □].

The joining of the face plate and the spacer in this embodiment was performed in the same manner as in Embodiment 2 as shown in FIG.

In this embodiment, since the fixing of the spacer 7 and the electrical connection between the spacer 7 and the metal back 16 can be performed simultaneously, the spacer and the face plate can be joined by a simpler manufacturing method. Example 1 in which the image display surface is not damaged and the discharge or the like due to the metal back peeling is unlikely to occur because no displacement occurs.
The same effect as described above is obtained, and the surface of the spacer is covered with a semiconductive film, and is electrically connected to the metal back 16 on the inner surface of the face plate. At the same time, since unexpected charges such as electrons and ions do not stay on the surface of the spacer, the trajectory of the electron beam is stabilized, and an effect that a stable image can be displayed for a long time is obtained.

[0071] [Embodiment 7] This embodiment also, as the spacer 7, similarly to Example 5, on the surface of the substrate 41, 10 ^5-1
A structure in which a semiconductive film 42 having a surface resistance of 0 ¹² [Ω / □] was formed was used.

Specifically, on a spacer substrate 41 made of soda-lime glass, tin oxide having a thickness of 1000
The film was formed in an argon / oxygen atmosphere by ion plating using an electron beam method. At this time, the surface resistance of the semiconductive film 42 was about 10 ⁹ [Ω / □].

In the present embodiment, as shown in FIG. 12, the same method as that of the third embodiment was used for joining the spacer 7 covered with the semiconductive film 42 to the face plate. Details are omitted.

In this embodiment, the electrical connection between the spacer 7 and the metal back 16 can be easily performed, and the metal back 16 is melted in the frit glass 19, so that the electrical connection can be easily reduced in resistance. At the connection of the metal back with the spacer, the electric field changes smoothly and unexpected charges such as electrons and ions do not stay on the spacer surface, so the orbit of the electron beam is stable and a stable image over a long period of time An effect similar to that of the above-described embodiment was obtained in that it could be displayed.

[Embodiment 8] In this embodiment, as in the case of the embodiment 5, the spacer 7 is formed on the surface of the base material 41 by 10 ⁵ to 1.
A structure in which a semiconductive film 42 having a surface resistance of 0 ¹² [Ω / □] was formed was used.

More specifically, tin oxide having a thickness of 1000 ° is placed on a spacer base material 41 made of soda lime glass.
The film was formed in an argon / oxygen atmosphere by ion plating using an electron beam method. At this time, the surface resistance of the semiconductive film 42 was about 10 ⁹ [Ω / □].

In the present embodiment, as shown in FIG. 13, in the method of joining the spacer 7 covered with the semiconductive film 42 and the face plate, the spacer 7 and the inner surface of the face plate are transparent as in the case of the fourth embodiment. The electrode 20 was joined so as to be electrically conductive. Details are omitted.

In this embodiment, since the electrical connection between the electrode (transparent electrode 20) on the inner surface of the face plate and the spacer 7 can be reliably performed, the electrical connection is further improved at the connection between the spacer and the transparent electrode. Similar to the previous embodiment in that the electric field changes smoothly and unexpected charges such as electrons and ions do not stay on the spacer surface, so that the trajectory of the electron beam is stable and a stable image can be displayed for a long time. Effect was obtained.

[0079]

As described above, according to the present invention, no misalignment occurs at the contact portion between the spacer and the phosphor screen on the inner surface of the face plate, and the phosphor screen and the metal back are not damaged. The image display surface is unlikely to be damaged, and discharge or the like due to metal back peeling is unlikely to occur.

Further, the electric conduction between the spacer and the electrode for applying the electron acceleration voltage on the inner surface of the face plate is improved, so that the electric field at the junction between the spacer and the face plate changes smoothly. Since the instability of conduction due to the displacement of the contact portion of the spacer with the face plate is also improved, the trajectory of the electron beam is stabilized.

According to the present invention, there is an effect that an image display device capable of providing a highly reliable image for a long time without disturbing the image or deterioration of the device due to the discharge is provided.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a schematic configuration of an image display device according to a first embodiment of the present invention.

FIG. 2 is an enlarged view of an element portion of the image display device according to the first embodiment of the present invention.

FIG. 3 is an enlarged view of a phosphor screen of the image display device according to the first embodiment of the present invention.

FIG. 4 is an enlarged view of a spacer joint according to the first embodiment of the present invention.

FIG. 5 is an enlarged view of a spacer joint according to a second embodiment of the present invention.

FIG. 6 is an enlarged view of a spacer joint according to a third embodiment of the present invention.

FIG. 7 is an enlarged view of a spacer joint according to a fourth embodiment of the present invention.

FIG. 8 is an enlarged view of a phosphor screen of a conventional image display device.

FIG. 9 is a cross-sectional view illustrating a schematic structure of a conventional image display device.

FIG. 10 is an enlarged view of a spacer joint according to a fifth embodiment of the present invention.

FIG. 11 is an enlarged view of a spacer joint according to a sixth embodiment of the present invention.

FIG. 12 is an enlarged view of a spacer joint according to a seventh embodiment of the present invention.

FIG. 13 is an enlarged view of a spacer joint according to an eighth embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Element electrode 3 Element electrode wiring part 4 Element electrode element part 5 Electron emission part 7 Spacer 8 Phosphor screen 9 Glass plate 10 Face plate 12 Spacer joint part 13 Phosphor 14 Thin film for electron emission part formation 15 Black stripe 16 Metal back Reference Signs List 17 frit glass 18 conductive layer 19 conductive frit glass 20 transparent electrode 41 spacer base material 42 semiconductive film

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01J 29/87 H01J 31/12

Claims (8)

(57) [Claims] 1. A substrate on which an electron-emitting device is arranged, a phosphor which is arranged to face the substrate and which receives an electron emitted from the electron-emitting device to form an image, and which is irradiated on the phosphor. An image display device comprising at least a face plate having an electrode for accelerating electrons on its inner surface and a spacer for maintaining a distance between the substrate and the face plate with respect to the atmospheric pressure. An image display device, wherein the acceleration electrode and the spacer are connected to each other by an electric conduction means , while being fixed to a portion where no phosphor is provided via fixing means . 2. Solid the spacer to the face plate
The image display device according to claim 1, wherein the fixing means for fixing and the electric conduction means for connecting the electrode for accelerating electrons and the spacer are independent. 3. Solid the spacer to the face plate
The image display device according to claim 1, wherein the fixing means for fixing and the electric conduction means for connecting the electron acceleration electrode and the spacer are the same. 4. The image display apparatus according to claim 1 that have a separate electrode for applying a voltage and common voltage applied to the accelerating electrode of the electron at the junction of the spacer and the face plate . 5. An electrode for applying a voltage common to a voltage applied to the electrode for acceleration of electrons to a junction between a spacer and a face plate is the electrode for acceleration.
An image display device according to claim 1. 6. The image display device according to claim 1, wherein the spacer is covered with a semiconductive film. 7. The semiconductor device according to claim 1, wherein the semiconductive film has a thickness of 10 ⁵ to 10 ¹² [Ω].
The image display device according to claim 6, which has a surface resistance value of //]. 8. The image display device according to claim 1, wherein said electron-emitting device is a surface conduction electron-emitting device.