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JP3315567B2 - Remote control receiving circuit - Google Patents
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JP3315567B2 - Remote control receiving circuit - Google Patents

Remote control receiving circuit

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Publication number
JP3315567B2
JP3315567B2 JP23741195A JP23741195A JP3315567B2 JP 3315567 B2 JP3315567 B2 JP 3315567B2 JP 23741195 A JP23741195 A JP 23741195A JP 23741195 A JP23741195 A JP 23741195A JP 3315567 B2 JP3315567 B2 JP 3315567B2
Authority
JP
Japan
Prior art keywords
channel mos
mos transistor
transistor
operational amplifier
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP23741195A
Other languages
Japanese (ja)
Other versions
JPH0984153A (en
Inventor
有二 山本
Original Assignee
セイコーインスツルメンツ株式会社
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Filing date
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Application filed by セイコーインスツルメンツ株式会社 filed Critical セイコーインスツルメンツ株式会社
Priority to JP23741195A priority Critical patent/JP3315567B2/en
Publication of JPH0984153A publication Critical patent/JPH0984153A/en
Application granted granted Critical
Publication of JP3315567B2 publication Critical patent/JP3315567B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Optical Communication System (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は,テレビやVTR等
々に広く用いられるリモートコントロール装置の受信用
回路に関するもので,さらに詳しくは,かかるリモート
コントロール装置の受信用回路のCMOS集積回路化,
低電源電圧動作化に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a receiving circuit of a remote control device widely used in televisions, VTRs, and the like, and more particularly, to a CMOS integrated circuit for the receiving circuit of the remote control device.
The present invention relates to low power supply voltage operation.

【0002】[0002]

【従来の技術】従来のリモートコントロール受信回路
(例えば特開平3−113924等)では,電源電圧よ
り低いバイアス電圧を作成し,該バイアス電圧に直列に
抵抗とフォトダイオードを接続し,該抵抗の一端に演算
増幅器の非反転入力端子を接続する構成になっている。
フォトダイオードに流れる直流電流が0,即ち赤外光の
入力が無いときには,演算増幅器の非反転入力端子には
該バイアス電圧が印加され,演算増幅器の反転入力端子
も出力端子も該バイアス電圧の電位になる。従来の技術
では,演算増幅器を正常な動作範囲にするために,演算
増幅器の反転と非反転の両入力端子と,出力端子に1.
2V以上の電圧を必要とするため,該バイアス電圧も
1.2V以上必要としていた。
2. Description of the Related Art In a conventional remote control receiving circuit (for example, Japanese Patent Application Laid-Open No. 3-113924), a bias voltage lower than a power supply voltage is created, a resistor and a photodiode are connected in series with the bias voltage, and one end of the resistor is connected. Is connected to the non-inverting input terminal of the operational amplifier.
When the DC current flowing through the photodiode is 0, that is, when there is no infrared light input, the bias voltage is applied to the non-inverting input terminal of the operational amplifier, and both the inverting input terminal and the output terminal of the operational amplifier have the potential of the bias voltage. become. In the prior art, in order to set the operational amplifier in a normal operating range, the inverting and non-inverting input terminals of the operational amplifier and 1.
Since a voltage of 2 V or more is required, the bias voltage also requires 1.2 V or more.

【0003】[0003]

【発明が解決しようとする課題】該バイアス電圧を作成
するために,電源電圧は該バイアス電圧よりも高くする
必要がある。動作する電源電圧を下げようとする時,該
バイアス電圧が,最低動作電圧の制約条件となる。そこ
で本発明の目的は,該バイアス電圧の制約を除去し,よ
り低い電源電圧で動作するリモコン受信用回路を提供す
ることにある。
In order to generate the bias voltage, the power supply voltage needs to be higher than the bias voltage. When trying to lower the operating power supply voltage, the bias voltage is a constraint on the minimum operating voltage. SUMMARY OF THE INVENTION An object of the present invention is to provide a remote control receiving circuit that operates at a lower power supply voltage by removing the restriction on the bias voltage.

【0004】[0004]

【課題を解決する為の手段】上記課題を解決するために
本発明は,使用する演算増幅器の内部回路を,対となる
入力差動段のトランジスタのサイズを等しくせず、更に
入力差動段の対となる負荷回路のトランジスタも等しく
ないサイズとし,非反転入力端子と反転入力端子が共に
0V(グランド電位)でも,出力端子に一定の電圧がで
る構成とした。
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides an internal circuit of an operational amplifier in which the size of transistors of a pair of input differential stages is not equal, The transistors of the load circuit forming the pair are unequal in size, and a constant voltage is applied to the output terminal even if both the non-inverting input terminal and the inverting input terminal are at 0 V (ground potential).

【0005】本発明によれば,使用する演算増幅器の内
部回路において,入力差動段を構成する二つのMOSト
ランジスタの相対的サイズ比を,ゲート電極を非反転入
力端子とするトランジスタのサイズを小さく,ゲート電
極を反転入力端子とするトランジスタのサイズを大きく
なるように設定した。更に,入力差動段に対応した負荷
段の二つのMOSトランジスタ相対的サイズ比を,反転
入力端子を持つトランジスタの負荷となるトランジスタ
のサイズを小さく,非反転入力端子を持つトランジスタ
の負荷となるトランジスタのサイズを大きくなるように
設定した。該サイズ比により所謂オフセット電圧を発生
させている。フォトダイオードを流れる電流が0Vの
時,該演算増幅器の入力端子の電圧が0Vなっても,該
演算増幅器の出力端子には,一定のオフセット電圧が発
生し,該演算増幅器の出力トランジスタが動作範囲に入
る。演算増幅器を動作範囲に入れるためのバイアス回路
を必要としないので,動作する電源電圧の低電圧化がは
かれる。
According to the present invention, in the internal circuit of the operational amplifier used, the relative size ratio between the two MOS transistors constituting the input differential stage can be reduced by reducing the size of the transistor having the gate electrode as the non-inverting input terminal. The size of a transistor having a gate electrode as an inverting input terminal is set to be large. Further, the relative size ratio of the two MOS transistors in the load stage corresponding to the input differential stage is determined by reducing the size of the transistor serving as the load of the transistor having the inverting input terminal and reducing the size of the transistor serving as the load of the transistor having the non-inverting input terminal. Was set to be large. A so-called offset voltage is generated by the size ratio. When the current flowing through the photodiode is 0 V, even if the voltage at the input terminal of the operational amplifier becomes 0 V, a constant offset voltage is generated at the output terminal of the operational amplifier, and the output transistor of the operational amplifier operates in the operating range. to go into. Since no bias circuit is required to bring the operational amplifier into the operating range, the operating power supply voltage can be reduced.

【0006】[0006]

【発明の実施の形態】以下図面を参照して本発明の好適
な実施例を詳細に説明する。図1は,本発明にかかるリ
モコン受信用回路の実施例を示す回路図である。図1に
おいてリモコン受信用集積回路(以下IC)2は,光の
強弱を電流の強弱に変換する外付けの光電変換素子5
と,電流の強弱を電圧の強弱に変換する負荷抵抗8と,
前記負荷抵抗8の両端に発生した電圧を増幅する前置増
幅器1と,前置増幅器1の出力Aを入力とし,リミッ
タ,フィルタ,検波回路等々から構成された信号処理回
路3とで構成されている。更に電源4にはリモコン受信
用IC2の電源端子6と,光電変換素子5の一端がつな
がっている。光電変換素子5は,IC2の入力端子7を
通してIC2内部の負荷抵抗8の一端に接続されてい
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a circuit diagram showing an embodiment of a remote control receiving circuit according to the present invention. In FIG. 1, a remote control receiving integrated circuit (hereinafter referred to as an IC) 2 includes an external photoelectric conversion element 5 for converting light intensity into current intensity.
And a load resistor 8 for converting the strength of the current into the strength of a voltage;
It comprises a preamplifier 1 for amplifying a voltage generated at both ends of the load resistor 8 and a signal processing circuit 3 which receives an output A of the preamplifier 1 as an input and includes a limiter, a filter, a detection circuit and the like. I have. Further, the power supply 4 is connected to a power supply terminal 6 of the remote control receiving IC 2 and one end of the photoelectric conversion element 5. The photoelectric conversion element 5 is connected to one end of a load resistor 8 inside the IC 2 through an input terminal 7 of the IC 2.

【0007】図1の全体の概略動作を述べる。光電変換
素子5により電流に変換された光信号は,負荷抵抗8で
電圧に変換され,前置増幅器1の入力端子P に入力され
増幅される。増幅された信号は,前置増幅器1の出力端
子Aを通して信号処理回路3に入力される。信号処理回
路3の出力は,High又はLowの2値でIC2の出
力端子11から出力される。図1に用いている前置増幅
器1は,非反転入力端子(正入力端子)P,反転入力端
子(負入力端子)M,出力端子A,の三端子で表現出来
る所謂演算増幅器1とも呼ばれるものである。一端が該
演算増幅器1の出力端子Aに,他端が該演算増幅器1の
反転入力端子Mに接続された抵抗17と,一端が前記反
転入力端子Mに,他端が容量10の一端に接続された抵
抗18と,他端がグランド電位に接続された前記容量1
0とで,所謂抵抗帰還増幅回路を構成している。該抵抗
帰還増幅回路は,前記非反転入力端子Pから前記出力端
子Aを見た時,直流ゲイン(利得)は1で交流ゲイン
は,抵抗17の抵抗値をR17,抵抗18の抵抗値をR
18とすると,R18<<R17のとき,ほぼR17/
R18になる。
The general operation of FIG. 1 will be described. The optical signal converted into a current by the photoelectric conversion element 5 is converted into a voltage by the load resistor 8, input to the input terminal P of the preamplifier 1, and amplified. The amplified signal is input to the signal processing circuit 3 through the output terminal A of the preamplifier 1. The output of the signal processing circuit 3 is output from the output terminal 11 of the IC 2 as a binary value of High or Low. The preamplifier 1 used in FIG. 1 is a so-called operational amplifier 1 that can be represented by three terminals of a non-inverting input terminal (positive input terminal) P, an inverting input terminal (negative input terminal) M, and an output terminal A. It is. One end is connected to the output terminal A of the operational amplifier 1, the other end is connected to the resistor 17 connected to the inverting input terminal M of the operational amplifier 1, one end is connected to the inverting input terminal M, and the other end is connected to one end of the capacitor 10. And the capacitor 1 whose other end is connected to the ground potential.
0 constitutes a so-called resistance feedback amplifier circuit. When the resistance feedback amplifier circuit sees the output terminal A from the non-inverting input terminal P, the DC gain (gain) is 1, and the AC gain is such that the resistance value of the resistor 17 is R17 and the resistance value of the resistor 18 is R17.
Assuming that R18 << R17, almost R17 /
It becomes R18.

【0008】次に演算増幅器1の内部構成について説明
する。PチャンネルMOSトランジスタ(以下PMO
S)13のソース電極が,共通にPMOS14のソース
電極と接続され,更に共通に,一端が電源に接続された
電流源22の他端に接続されて所謂差動入力段を形成し
ている。PMOS13のドレイン電極はNチャンネルM
OSトランジスタ(以下NMOS)15のドレイン電極
と,NMOS19のゲート電極に共通に接続され,PM
OS14のドレイン電極はNMOS16のドレイン電極
と,NMOS16のゲート電極に接続され,NMOS1
5とNMOS16とで所謂負荷回路を構成している。N
MOS19のドレイン電極は,一端が電源に接続された
負荷素子21の他端に接続されて,所謂出力段を形成し
ている。
Next, the internal configuration of the operational amplifier 1 will be described. P-channel MOS transistor (hereinafter PMO
S) The source electrode of 13 is commonly connected to the source electrode of the PMOS 14, and further commonly connected to the other end of the current source 22 having one end connected to a power supply to form a so-called differential input stage. The drain electrode of the PMOS 13 is an N-channel M
The drain electrode of the OS transistor (hereinafter referred to as NMOS) 15 and the gate electrode of the NMOS 19 are commonly connected.
The drain electrode of the OS 14 is connected to the drain electrode of the NMOS 16 and the gate electrode of the NMOS 16,
5 and the NMOS 16 constitute a so-called load circuit. N
The drain electrode of the MOS 19 is connected to the other end of the load element 21 whose one end is connected to a power supply to form a so-called output stage.

【0009】以下演算増幅器1の動作を図2を用いて説
明する。図2は入射光の強度とA点の電位を示してい
る。実線は本発明によるリモコン受信用回路の特性を示
しており,点線は演算増幅器1に一般的に用いられるオ
フセット電圧の少ないものを用いた場合を示している。
直流的な光入力の場合には,P点に発生する電圧は,入
射光の強度に比例する。一方,演算増幅器1の出力端子
Aでは,入射光の強度が0でも一定の出力Voffが得
られている。入射光の強度が増していくとA点の電位は
Voffを始点として,入射光に比例して増加してい
く。入力端子Pが直流的に0のときにも,出力端子Aに
はVoffの電圧が発生しているので,微小の交流入力
が同時に重畳して入力されると,出力端子Aには,交流
ゲイン倍に増幅された交流信号があらわれる。即ちバイ
アス電源のような別電源による動作点の設定をおこなわ
なくても,背景光が無い時に交流的な信号を増幅でき
る。
The operation of the operational amplifier 1 will be described below with reference to FIG. FIG. 2 shows the intensity of incident light and the potential at point A. The solid line shows the characteristics of the remote control receiving circuit according to the present invention, and the dotted line shows the case where the operational amplifier 1 having a small offset voltage is used.
In the case of DC light input, the voltage generated at point P is proportional to the intensity of the incident light. On the other hand, at the output terminal A of the operational amplifier 1, a constant output Voff is obtained even if the intensity of the incident light is zero. As the intensity of the incident light increases, the potential at the point A increases in proportion to the incident light, starting from Voff. Even when the input terminal P is DC 0, a Voff voltage is generated at the output terminal A. Therefore, if a minute AC input is simultaneously superimposed and input, the output terminal A has an AC gain. A double amplified AC signal appears. That is, an AC signal can be amplified when there is no background light, without setting an operating point by another power supply such as a bias power supply.

【0010】図3の実線で示すように,直流的な入射光
の強度を横軸,交流ゲイン(利得)を縦軸として表示す
れば,本発明によるリモコン受信用回路は,入射光の強
度によらず一定の交流ゲインを得ている。図3の点線は
図1の演算増幅器1の中のMOSトランジスタの定数設
定を,一般的に行なわれるように,PMOSトランジス
タ13と14を同じサイズ,NMOSトランジスタ15
と16を同じサイズにしたものの入射光と交流ゲインの
関係を示している。トランジスタのサイズを各々同一サ
イズにすれば,演算増幅器1に発生する所謂オフセット
は,製造ばらつき等により正負ランダムにわずかな量し
か発生しない。入射光強度がないときには,図2の点線
で示したように出力Aの電圧はほぼ0となりトランジス
タの動作不能範囲になるので,図3の点線で示したよう
に交流ゲインは極端に低下する。
As shown by the solid line in FIG. 3, if the intensity of the DC incident light is displayed on the horizontal axis and the AC gain (gain) is displayed on the vertical axis, the remote control receiving circuit according to the present invention can reduce the intensity of the incident light. Regardless, a constant AC gain is obtained. The dotted line in FIG. 3 indicates that the PMOS transistors 13 and 14 have the same size and the NMOS transistors 15 and 14 have the same size as the MOS transistor in the operational amplifier 1 shown in FIG.
16 shows the relationship between the incident light and the AC gain for the same size of 16 and 16. If the sizes of the transistors are the same, only a small amount of so-called offset generated in the operational amplifier 1 is generated at random in the positive and negative directions due to manufacturing variations. When there is no incident light intensity, the voltage of the output A becomes almost zero as shown by the dotted line in FIG. 2 and becomes in the inoperable range of the transistor, so that the AC gain is extremely reduced as shown by the dotted line in FIG.

【0011】次に,このVoffの発生方法について説
明する。MOSトランジスタのゲート長をLゲート幅を
Wとすると一般的にトランジスタサイズはW/Lで表現
される,トランジスタサイズという表現は,この定義を
用いている。一般的にはCMOSで構成する演算増幅器
1は,差動入力段を構成するPMOSトランジスタ13
と14のサイズは相等しく,又負荷段を構成するNMO
Sトランジスタ15と16のサイズも相等しく設定す
る。
Next, a method of generating this Voff will be described. When the gate length of a MOS transistor is L and the gate width is W, the transistor size is generally expressed by W / L. The expression “transistor size” uses this definition. Generally, an operational amplifier 1 composed of a CMOS includes a PMOS transistor 13 constituting a differential input stage.
And 14 have the same size, and the NMO
The sizes of the S transistors 15 and 16 are also set equal.

【0012】本発明では,PMOSトランジスタ13の
サイズをPMOSトランジスタ14より小さく,NMO
Sトランジスタ16のサイズをNMOSトランジスタ1
5より小さくしている。具体的にはPMOSトランジス
タ13の利得係数をβとし,PMOSトランジスタ14
は利得係数がb×βとなるようにb倍のサイズとして,
負荷段のトランジスタNMOS15と16のサイズの比
をa:1とすると,Voffは,即ちPMOSトランジ
スタ13と14のゲート−ソース間電圧の差であるか
ら,よく知られているMOSの電流式を使ってPMOS
トランジスタ13と14の閾値電圧をVth,PMOS
トランジスタ13のゲート−ソース間電圧をVgs1
3,PMOSトランジスタ14のゲート−ソース間電圧
をVgs14とすると,PMOSトランジスタ13のド
レイン電流Id1と,PMOSトランジスタ14のドレ
イン電流Id2は
In the present invention, the size of the PMOS transistor 13 is smaller than that of the PMOS
The size of the S transistor 16 is changed to the NMOS transistor 1
It is smaller than 5. Specifically, the gain coefficient of the PMOS transistor 13 is β,
Is the size of b times so that the gain coefficient becomes b × β.
Assuming that the ratio of the size of the transistors NMOS 15 and 16 in the load stage is a: 1, Voff is the difference between the gate-source voltages of the PMOS transistors 13 and 14, so that a well-known MOS current equation is used. PMOS
The threshold voltages of the transistors 13 and 14 are Vth, PMOS
The gate-source voltage of the transistor 13 is Vgs1
3. Assuming that the gate-source voltage of the PMOS transistor 14 is Vgs14, the drain current Id1 of the PMOS transistor 13 and the drain current Id2 of the PMOS transistor 14 are

【0013】[0013]

【数1】 (Equation 1)

【0014】[0014]

【数2】 (Equation 2)

【0015】NMOSトランジスタ15,16は,所謂
カレントミラーを構成していて,流れる電流比がトラン
ジスタサイズの比と等しくなるので
The NMOS transistors 15 and 16 form a so-called current mirror, and the flowing current ratio becomes equal to the transistor size ratio.

【0016】[0016]

【数3】 (Equation 3)

【0017】したがってVoffは,Vgs13−Vg
s14なので,数式1,2,3から
Therefore, Voff is Vgs13−Vg
Since it is s14, from equations 1, 2, and 3,

【0018】[0018]

【数4】 (Equation 4)

【0019】数式4に,容易に実現可能な代表的な数値
を代入してみる,Id1=50μA,β=1mA/v・
v,a=1.7,b=1.7とすると,Voff≒13
0mV となり容易に実現が可能である。
By substituting representative numerical values that can be easily realized into Equation 4, Id1 = 50 μA, β = 1 mA / v ·
Assuming that v, a = 1.7 and b = 1.7, Voff ≒ 13
It is 0 mV and can be easily realized.

【0020】[0020]

【発明の効果】本発明によるリモコン受信回路では,初
段に使用している演算増幅器のトランジスタサイズを非
対称に変えることで,意図的にオフセットを発生させた
ものを用いている。即ち入力電圧が0でも出力には一定
の直流電圧Voffが得られる。又差動入力段にPMO
Sトランジスタを用いているので,入力直流電圧が0V
でも交流入出力を可能にしている。 即ち,背景光が無
い時に入力が0Vになっても,交流ゲインを得ることが
できるので,動作点を設定するバイアス回路が不要にな
り,低電源電圧で動作させることができる。
In the remote control receiving circuit according to the present invention, an offset is intentionally generated by asymmetrically changing the transistor size of the operational amplifier used in the first stage. That is, even if the input voltage is 0, a constant DC voltage Voff is obtained at the output. In addition, PMO
Since the S transistor is used, the input DC voltage is 0V
But it allows AC input and output. That is, even if the input becomes 0 V when there is no background light, an AC gain can be obtained, so that a bias circuit for setting an operating point is not required, and the device can be operated with a low power supply voltage.

【0021】また演算増幅器のトランジスタを,MOS
トランジスタで構成しているのでCMOS集積回路化が
可能である。
The transistor of the operational amplifier is a MOS transistor.
Since it is composed of transistors, a CMOS integrated circuit can be formed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施例を示す回路図。FIG. 1 is a circuit diagram showing an embodiment of the present invention.

【図2】本発明によるリモコン受信回路の初段の直流特
性を示すグラフ。
FIG. 2 is a graph showing DC characteristics of a first stage of a remote control receiving circuit according to the present invention.

【図3】本発明にようリモコン受信回路の初段の交流特
性を示すグラフ。
FIG. 3 is a graph showing AC characteristics of a first stage of a remote control receiving circuit according to the present invention.

【符号の説明】[Explanation of symbols]

1 演算増幅器 2 リモコン受信用回路 3 信号処理回路 4 電源 5 受光素子 6 リモコン受信用回路の電源端子 7 リモコン受信用回路の入力端子 8 負荷抵抗 10,20 容量 11 リモコン受信用回路の出力端子 13,14 PチャンネルMOSトランジスタ 15,16,19 NチャンネルMOSトランジスタ 17,18 抵抗 21 負荷素子 22 定電流源 REFERENCE SIGNS LIST 1 operational amplifier 2 remote control reception circuit 3 signal processing circuit 4 power supply 5 light receiving element 6 power supply terminal of remote control reception circuit 7 input terminal of remote control reception circuit 8 load resistance 10, 20 capacity 11 output terminal of remote control reception circuit 13, 14 P-channel MOS transistor 15, 16, 19 N-channel MOS transistor 17, 18 Resistance 21 Load element 22 Constant current source

フロントページの続き (51)Int.Cl.7 識別記号 FI H04B 10/28 Continued on the front page (51) Int.Cl. 7 Identification code FI H04B 10/28

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】光の強弱を電流の強弱に変換する光電変換
素子と,前記電流の強弱を電圧の強弱に変換する第一の
抵抗と,前記電圧の強弱を入力とし増幅する増幅回路
と,前記増幅回路の出力の信号を処理する回路とで構成
されたリモコン受信用回路において,前記増幅回路は,
非反転入力端子を入力とする演算増幅器と,前記演算増
幅器の反転入力端子と出力端子との間に配した第二の抵
抗と,前記演算増幅器の反転入力端子とグランド電位の
間に配した直列に接続した第三の抵抗と第一の容量とで
構成され,前記演算増幅回路が,一端が電源,他端が第
一のPチャンネルMOSトランジスタのソース電極と第
二のPチャンネルMOSトランジスタのソース電極とに
共通に接続された電流源と,ゲート電極を非反転入力端
子としドレイン電極が第一のNチャンネルMOSトラン
ジスタのドレイン電極と第三のNチャンネルMOSトラ
ンジスタのゲート電極に共通に接続された前記第一のP
チャンネルMOSトランジスタと,ゲート電極を反転入
力端子としドレイン電極を第二のNチャンネルMOSト
ランジスタのゲート電極とドレイン電極と前記第一のN
チャンネルMOSトランジスタのゲート電極に共通に接
続した前記第二のPチャンネルMOSトランジスタと,
残るソース電極はグランド電位に接続された前記第一の
NチャンネルMOSトランジスタと,残るソース電極は
グランド電位に接続された前記第二のNチャンネルMO
Sトランジスタと,一端が電源に,他端が出力端子と前
記第三のNチャンネルMOSトランジスタのドレイン電
極とに共通に接続された負荷抵抗素子と,残るソース電
極はグランド電位に接続した前記第三のNチャンネルM
OSトランジスタとで構成され,前記各々のトランジス
タの利得係数の比率が,前記第一のPチャンネルMOS
トランジスタの利得係数が前記第二のPチャンネルMO
Sトランジスタの利得係数より小さく,かつ前記第二の
NチャンネルMOSトランジスタの利得係数が前記第一
のNチャンネルMOSトランジスタの利得係数より小さ
いことを特徴としたリモコン受信用回路。
A photoelectric conversion element for converting light intensity to current intensity, a first resistor for converting current intensity to voltage intensity, and an amplifier circuit for amplifying the voltage intensity as an input; And a circuit for processing a signal output from the amplifier circuit.
An operational amplifier having a non-inverting input terminal as an input, a second resistor disposed between the inverting input terminal and the output terminal of the operational amplifier, and a series resistor disposed between the inverting input terminal of the operational amplifier and a ground potential; The operational amplifier circuit includes a power supply at one end, and a source electrode of the first P-channel MOS transistor and a source at the other end connected to the source of the second P-channel MOS transistor. A current source commonly connected to the electrodes and a gate electrode having a non-inverting input terminal and a drain electrode commonly connected to the drain electrode of the first N-channel MOS transistor and the gate electrode of the third N-channel MOS transistor. The first P
A channel MOS transistor, a gate electrode of which is an inverting input terminal, and a drain electrode of which is a gate electrode and a drain electrode of the second N-channel MOS transistor;
The second P-channel MOS transistor commonly connected to the gate electrode of the channel MOS transistor;
The remaining source electrode is the first N-channel MOS transistor connected to ground potential, and the remaining source electrode is the second N-channel MOS transistor connected to ground potential.
An S transistor, a load resistance element having one end connected to a power supply, the other end commonly connected to an output terminal and a drain electrode of the third N-channel MOS transistor, and a third source electrode connected to a ground potential. N channel M
An OS transistor, and the ratio of the gain coefficient of each of the transistors is equal to the first P-channel MOS.
The gain coefficient of the transistor is the second P-channel MO
A remote control receiving circuit, wherein the gain coefficient is smaller than the gain coefficient of the S transistor and the gain coefficient of the second N-channel MOS transistor is smaller than the gain coefficient of the first N-channel MOS transistor.
JP23741195A 1995-09-14 1995-09-14 Remote control receiving circuit Expired - Fee Related JP3315567B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23741195A JP3315567B2 (en) 1995-09-14 1995-09-14 Remote control receiving circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23741195A JP3315567B2 (en) 1995-09-14 1995-09-14 Remote control receiving circuit

Publications (2)

Publication Number Publication Date
JPH0984153A JPH0984153A (en) 1997-03-28
JP3315567B2 true JP3315567B2 (en) 2002-08-19

Family

ID=17014980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23741195A Expired - Fee Related JP3315567B2 (en) 1995-09-14 1995-09-14 Remote control receiving circuit

Country Status (1)

Country Link
JP (1) JP3315567B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100844162B1 (en) * 2006-10-02 2008-07-04 주식회사 에이디텍 Photodiode Connection Circuit
CN109270026B (en) * 2018-12-14 2023-11-03 河北大学 A near-infrared receiving and transmitting control device

Also Published As

Publication number Publication date
JPH0984153A (en) 1997-03-28

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