JP3317481B2 - Resin composition for semiconductor encapsulation - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for semiconductor encapsulation which does not contain halogen and antimony and has excellent flame retardancy.

[0002]

2. Description of the Related Art Conventionally, electronic components such as diodes, transistors, and integrated circuits have been sealed with an epoxy resin composition (hereinafter referred to as a resin composition). This resin composition contains a halogen-based flame retardant alone as a flame retardant, or a combination of a halogen-based flame retardant and antimony trioxide, and an inorganic filler such as fused silica or crystalline silica as a filler. However, recently, from the viewpoint of environmental hygiene, a flame-retardant epoxy resin composition not using a halogen-based flame retardant, antimony trioxide or the like has been required. In response to this demand, approaches have been made mainly from flame retardants,
Metal hydroxides such as aluminum hydroxide and magnesium hydroxide, boron compounds, and the like have been studied, but these have not been put to practical use because they cannot exhibit flame retardancy unless added in large amounts. Further, a red phosphorus-based flame retardant has a flame retardant effect even when added in a small amount, and is effective in making the resin composition flame-retardant. However, red phosphorus reacts with a small amount of water to produce phosphine and corrosive phosphoric acid. Therefore, it cannot be used for a resin composition that has strict requirements for moisture resistance. For this reason, red phosphorus particles are coated with a thermosetting resin such as aluminum hydroxide, metal oxides, other inorganic compounds, and phenol resins to stabilize the red phosphorus. Level has not been reached. Also, studies have been made on resin components such as epoxy resin and phenol resin, which are the main components of the resin composition. For example, an imide resin has been studied, but has not been adopted because it has a too high melting point and is inferior in fluidity.

[0003]

SUMMARY OF THE INVENTION The present invention provides a resin composition which does not contain halogen and antimony and has excellent flame retardancy.

[0004]

According to the present invention, there is provided a phenolic resin curing agent containing 30 to 100% by weight of a benzoguanamine-modified phenolic resin of the formula (1) in (A) an epoxy resin and (B) a total phenolic resin curing agent. (C) a curing accelerator,
In the resin composition for semiconductor encapsulation comprising (D) a metal hydroxide and (E) an inorganic filler, in particular, the metal hydroxide (D) has an average particle size of 5 to 50 μm and a maximum particle size of 120.
containing 3 to 30.0% by weight of aluminum hydroxide or magnesium hydroxide of not more than μm in the total resin composition;
60 to 90% by weight of the inorganic filler (E) in the total resin composition
It is a resin composition for semiconductor encapsulation characterized by containing.

Embedded image (K is an integer from 0 to 4, l and m are integers and 1 ≦ l + m ≦
4)

[0005]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The epoxy resin used in the present invention is:
Monomers, oligomers, and polymers having two or more epoxy groups in one molecule are generally referred to, and their molecular weight and molecular structure are not particularly limited. For example, bisphenol epoxy resin, cresol novolak epoxy resin, novolak epoxy Resins, biphenyl-type epoxy compounds, stilbene-type epoxy compounds, triphenolmethane-type epoxy compounds, alkyl-modified triphenolmethane-type epoxy compounds, triazine nucleus-containing epoxy resins, terpene-modified epoxy resins, and the like. May be used.

The benzoguanamine-modified phenolic resin of the formula (1) used in the present invention is obtained by reacting phenol, benzoguanamine and formaldehyde in the presence of a weakly basic catalyst. Since it contains more than the resin, it has a feature that it is less flammable than the ordinary phenol novolak resin. The blending amount of the benzoguanamine-modified phenol resin is 30 to 100 in the total phenol resin curing agent.
% By weight is preferred. If it is less than 30% by weight, the effect of benzoguanamine does not appear, and the flame retardancy decreases. Where k, l,
The value of m is preferably 0 ≦ k ≦ 4 and 1 ≦ (l + m) ≦ 4. If the value of k exceeds 4, the viscosity of the resin increases, and the fluidity of the resin composition deteriorates, which is not preferable. When the value of (l + m) exceeds 4, the effect of benzoguanamine is weakened and the flame retardancy is reduced.

When a phenol resin curing agent other than the benzoguanamine-modified phenol resin of the formula (1) is used in combination, the phenol resin curing agent used is not limited in its molecular weight and molecular structure. Resin, cresol novolak resin, dicyclopentadiene-modified phenol resin, xylylene-modified phenol resin, terpene-modified phenol resin, and the like,
These may be used alone or as a mixture. As the mixing ratio of the epoxy resin and the phenol resin, the ratio of the number of epoxy groups of the epoxy resin to the number of phenolic hydroxyl groups of the phenol resin curing agent is preferably 0.8 to 1.2.

The curing accelerator used in the present invention may be any one which promotes the reaction between the epoxy group and the phenolic hydroxyl group, and those generally used for sealing materials can be widely used. , 1,8-diazabicyclo (5,4,0) undecene-7, triphenylphosphine, dimethylbenzylamine and the like, and these may be used alone or as a mixture.

The metal hydroxide used in the present invention is preferably aluminum hydroxide or magnesium hydroxide.
The average particle size is desirably 5 to 50 μm. If it is less than 5 μm, the fluidity of the resin composition will decrease, and if it exceeds 50 μm, the dispersibility of the flame retardant will be poor and the flame retardancy will be reduced. Further, the maximum particle size is preferably 120 μm or less. If it exceeds 120 μm, there is a possibility that a problem that the gate cannot be passed during molding may occur.

As the inorganic filler used in the present invention, for example, a fused silica powder, a spherical silica powder, a crystalline silica powder, a secondary aggregated silica powder, a porous silica powder, a secondary aggregated silica powder or a porous silica powder is pulverized. Silica powder, alumina and the like. The blending amount is desirably 60 to 90% by weight in the total resin composition from the balance between moldability and reliability. If it is less than 60% by weight, the flame retardancy is poor, and if it exceeds 90% by weight, the fluidity of the resin composition is poor.

[0011] The resin composition of the present invention comprises, in addition to the components (A) to (E), a silane coupling agent, a coloring agent such as carbon black and red bean as required, and a release agent such as natural wax and synthetic wax. And various additives such as low-stress additives such as silicone oil and rubber.

In order to produce the resin composition of the present invention as a molding material, the components (A) to (E) and other additives are thoroughly and uniformly mixed using a mixer or the like, and then further heated. Alternatively, it can be melt-mixed in a kneader or the like, cooled and then pulverized to obtain a molding material. These resin compositions can be applied to sealing, coating, insulating and the like of electronic parts or electric parts.

[0013]

The present invention will be described below by way of examples. The unit is parts by weight. Examples 1-6, Comparative Examples 1-6 Orthocresol novolak type epoxy resin (softening point 6
2 ° C., epoxy equivalent 200 g / eq) Biphenyl type epoxy compound (YX4000H, manufactured by Yuka Shell Epoxy Co., Ltd., melting point 108 ° C., epoxy equivalent 191 g / eq) Benzoguanamine-modified phenol resin of the formula (1) (k =
1, l + m = 3, softening point 108 ° C., hydroxyl equivalent 234 g
Phenol novolak resin (softening point 80 ° C., hydroxyl equivalent 104 g / eq) phenol aralkyl resin (softening point 80 ° C., hydroxyl equivalent 170 g / eq) 1,8-diazabicyclo (5,4,0) undecene-7
(Hereinafter, referred to as DBU) Aluminum hydroxide (average particle size: 12 μm, maximum particle size: 74)
μm) Magnesium hydroxide (average particle size 18 μm, maximum particle size 90
μm) fused silica powder (average particle size 13 μm, specific surface area 2.2 m)
² / g) Carbon black Carnauba wax was mixed at room temperature using a mixer at the respective ratios shown in Tables 1 and 2, kneaded at 70 to 100 ° C. using a biaxial roll, cooled and pulverized to form a molding material. This was tableted to obtain a resin composition. This resin composition was transferred to a low-pressure transfer molding machine (molding conditions: 175 ° C., 70 kg / c).
m ² , 120 seconds), and the obtained molded product is
Post-curing was performed at 75 ° C. for 8 hours and evaluated. The results are shown in Tables 1 and 2.

Evaluation method Flame resistance test: A UL-94 vertical test (sample thickness 1.0 mm) was performed and expressed as flame resistance. 2. Solder moisture resistance test: Test element (16pSOP)
At a temperature of 85 ° C. and a relative humidity of 85% for 72 hours,
Thereafter, it was immersed in a solder bath at 260 ° C. for 10 seconds, and subjected to a pressure cooker test (125 ° C., pressure 2.4 kg / c).
m ² ), and the time of occurrence of open circuit failure was measured.

[0015]

[Table 1]

[0016]

[Table 2]

[0017]

By using the resin composition of the present invention, a semiconductor device which does not contain a halogen-based flame retardant and antimony oxide and has excellent flame retardancy and moisture resistance can be obtained.

────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁷ Identification code FI H01L 23/31 (56) References JP-A-9-207271 (JP, A) JP-A-1-319562 (JP, A) JP-A-8-253557 (JP, A) JP-A-8-253558 (JP, A) JP-A-8-253559 (JP, A) JP-A-8-311142 (JP, A) JP-A-9-110954 (JP JP, A) JP-A-9-124775 (JP, A) JP-A-64-73748 (JP, A) JP-A-64-73749 (JP, A) JP-A-1-101658 (JP, A) Hei 8-151505 (JP, A) WO 97/12925 (WO, A1) (58) Fields investigated (Int. Cl. ⁷ , DB name) C08G 59/62 C08L 63/00-63/10 C08K 3 / 22 H01L 23/29

Claims (3)

(57) [Claims] (A) an epoxy resin, (B) a phenol resin curing agent containing 30 to 100% by weight of a benzoguanamine-modified phenol resin of the formula (1) in a total phenol resin curing agent, (C) a curing accelerator, A resin composition for encapsulating a semiconductor, comprising: D) a metal hydroxide; and (E) an inorganic filler. Embedded image (K is an integer from 0 to 4, l and m are integers and 1 ≦ l + m ≦
4) 2. The metal hydroxide (D) is aluminum hydroxide or magnesium hydroxide and has an average particle size of 5 to 50.
The resin composition for semiconductor encapsulation according to claim 1, wherein the resin composition has a maximum particle diameter of 120 µm or less. 3. The composition according to claim 1, wherein the metal hydroxide (D) is contained in the total resin composition in an amount of 3.0 to 30.0% by weight, and the inorganic filler (E) is contained in the total resin composition in an amount of 60 to 90% by weight. 3. The resin composition for semiconductor encapsulation according to 1 or 2.