JP3323069B2 - Low temperature firing porcelain composition - Google Patents
Low temperature firing porcelain compositionInfo
- Publication number
- JP3323069B2 JP3323069B2 JP19247796A JP19247796A JP3323069B2 JP 3323069 B2 JP3323069 B2 JP 3323069B2 JP 19247796 A JP19247796 A JP 19247796A JP 19247796 A JP19247796 A JP 19247796A JP 3323069 B2 JP3323069 B2 JP 3323069B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- low
- sio
- sintered body
- porcelain composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/004—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of particles or flakes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Dispersion Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、低抵抗の銅(C
u)や銀(Ag)、あるいは金(Au)等と同時焼成が
可能な低温焼成磁器組成物に関するもので、とりわけ比
誘電率と誘電正接が小さい程、優れた放射特性を示すア
ンテナ用材料や、信号の伝搬遅延時間及び伝送損失を小
さくすることが可能な高周波多層配線基板用材料等に好
適な低温焼成磁器組成物に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-resistance copper (C
u), silver (Ag), or gold (Au), etc., which relates to a low-temperature fired porcelain composition that can be simultaneously fired. The present invention relates to a low-temperature fired porcelain composition suitable for a material for a high-frequency multilayer wiring board capable of reducing signal propagation delay time and transmission loss.
【0002】[0002]
【従来の技術】従来より各種アンテナ用材料としては、
比誘電率が2〜3と小さく加工性に優れたテフロンや、
比誘電率は9〜10、あるいは12〜13と前記テフロ
ンよりはそれぞれ大きいものの、特に高周波の信号を中
間周波の信号に変換して送受信する回路(RF/IF回
路)を有するアンテナでは、配線基板との比誘電率が同
程度であり前記回路との一体化に優れるアルミナ(Al
2 O3 )やガリウムヒ素(GaAs)等や、前記テフロ
ンとAl2 O3 やGaAsの中間の特性を有する比誘電
率が4〜5を示す石英等が用いられている。2. Description of the Related Art Conventionally, materials for various antennas include:
Teflon with a relative dielectric constant as small as 2-3 and excellent in processability,
Although the relative permittivity is 9 to 10, or 12 to 13, which is larger than that of the Teflon, an antenna having a circuit (RF / IF circuit) for converting a high-frequency signal into an intermediate-frequency signal and transmitting / receiving the same is particularly a wiring board. And alumina (Al), which have the same relative dielectric constant as
2 and O 3), gallium arsenide (GaAs) or the like, the Teflon and as Al 2 O 3 and the dielectric constant having properties intermediate GaAs quartz or the like indicating a 4-5 is used.
【0003】前記アンテナ用材料の特性に影響するもの
としては、誘電体損や導体損、放射損等の各種損失があ
り、とりわけ前記導体損を低減するためには導体抵抗を
小さくするとともに、前記誘電体損を低減するために比
誘電率と誘電正接が小さいことが望ましい。There are various kinds of loss such as dielectric loss, conductor loss, radiation loss, etc. that affect the characteristics of the antenna material. In particular, in order to reduce the conductor loss, the conductor resistance is reduced, and In order to reduce dielectric loss, it is desirable that the relative permittivity and the dielectric loss tangent are small.
【0004】そこで、導体抵抗の小さい材料としてCu
やAg、Au等を用い、前記テフロンやAl2 O3 、G
aAs等の絶縁基体に配線パターンを形成することが考
えられるが、これら絶縁基体に前記低抵抗導体で所定の
配線パターンを形成するには、一般に銅箔貼付法やスパ
ッタリング法、フォトリソグラフ法等を採用しなければ
ならない。Accordingly, Cu is used as a material having a low conductor resistance.
Teflon, Al 2 O 3 , G
It is conceivable to form a wiring pattern on an insulating substrate such as aAs. In order to form a predetermined wiring pattern on the insulating substrate with the low-resistance conductor, a copper foil bonding method, a sputtering method, a photolithographic method, or the like is generally used. Must be employed.
【0005】しかしながら、アンテナ材料としては前記
銅箔貼付法では一層当たりの厚さが厚くなること、また
スパッタリング法では単板にしか適用できないこと、フ
ォトリソグラフ法では所定の厚さ範囲内で多数の積層は
可能ではあるものの、多くの工程を必要とし、製造コス
トの増加を招くこと等から、前記低抵抗導体で配線パタ
ーンを形成しても積層数が制限されるか、積層すること
自体が困難であるという問題があった。[0005] However, as for the antenna material, the copper foil sticking method has a large thickness per layer, the sputtering method can only be applied to a single plate, and the photolithographic method requires a large number of materials within a predetermined thickness range. Although lamination is possible, the number of laminations is limited or the lamination itself is difficult even if a wiring pattern is formed with the low-resistance conductor, since many steps are required and the manufacturing cost is increased. There was a problem that is.
【0006】一方、高周波多層配線基板用材料として
は、従来から配線基板用として多用されてきたアルミナ
セラミックスでは、焼成温度が1500〜1600℃と
高いことから、同時焼成可能な配線導体としては導体抵
抗が高いタングステン(W)やモリブデン(Mo)等の
高融点金属を使用しなければならず、そのために高周波
域においては高い導体抵抗が信号の伝送損失を大きくし
てしまうという問題があった。On the other hand, as a material for a high-frequency multilayer wiring board, alumina ceramics, which have been frequently used for wiring boards, have a firing temperature as high as 1500 to 1600 ° C., so that a wiring conductor that can be simultaneously fired is a conductor resistance. Therefore, a high melting point metal such as tungsten (W) or molybdenum (Mo) must be used, which causes a problem that a high conductor resistance increases a signal transmission loss in a high frequency range.
【0007】その上、近年の高度情報化時代にあって
は、情報伝達はより高速化、高周波化が進み、搭載され
る半導体素子もより高速化、高集積化され、更に実装の
より高密度化が要求されるようになっており、従来のア
ルミナセラミックスでは比誘電率が3GHzの周波数域
で9〜9.5程度とかなり大きいことから、アルミナセ
ラミックス自体が昨今の高周波用の配線基板材料として
は不適当であると言われている。In addition, in the recent advanced information age, the speed of information transmission has been increased and the frequency has been increased, and the mounted semiconductor elements have been increased in speed and integration, and the packaging density has been increased. Since the relative dielectric constant of conventional alumina ceramics is considerably large at about 9 to 9.5 in the frequency range of 3 GHz, alumina ceramics itself is used as a wiring board material for recent high frequency. Is said to be inappropriate.
【0008】そこで、前記低抵抗のCuやAg、Au等
から成る配線導体を簡便なスクリーン印刷法で形成で
き、積層も容易かつ同時焼成可能な低温焼成磁器組成物
として、例えば、SiO2 、Al2 O3 、MgO等を主
成分とするガラス組成物とセラミックスの混合物から成
るガラスセラミックスが提案されているが、機械的強度
の更なる向上、及び演算処理の高速化の要求は更に高ま
り、高強度でより低い比誘電率を有するガラスセラミッ
クスの開発が望まれている。[0008] Therefore, the low-resistance Cu and Ag, the wiring conductor made of Au or the like can be formed by a simple screen-printing method, as easily and fireable low temperature sintering ceramic composition laminated, for example, SiO 2, Al Glass ceramics comprising a mixture of a glass composition containing 2 O 3 , MgO or the like as a main component and a ceramic have been proposed. However, demands for further improvement in mechanical strength and speeding up of arithmetic processing have been further increased. Development of glass ceramics having a lower strength and a lower dielectric constant is desired.
【0009】その結果、1000℃以下の低温焼成が可
能で、十分な機械的強度が確保でき、高速演算処理に十
分対応可能なより低い比誘電率を有する配線基板材料と
して、ホウケイ酸ガラスとコージェライト、及びアルミ
ナから成るガラスセラミックスが提案されている(特開
平4−238838号公報参照)。As a result, borosilicate glass and corrugated glass are used as wiring board materials that can be fired at a low temperature of 1000 ° C. or less, have sufficient mechanical strength, and have a lower relative dielectric constant enough to cope with high-speed arithmetic processing. Glass ceramics composed of light and alumina have been proposed (see Japanese Patent Application Laid-Open No. Hei 4-238838).
【0010】[0010]
【発明が解決しようとする課題】しかしながら、前記提
案のガラスセラミックスは、比誘電率を4〜5程度とす
ることは可能なものの、抗折強度が100〜150MP
a程度と低く、アンテナ用や高周波用の各種材料として
要求される比誘電率、及び機械的強度等の諸特性全てを
必ずしも満足するものではないという課題があった。However, the glass ceramics proposed above can have a relative dielectric constant of about 4 to 5, but have a transverse rupture strength of 100 to 150 MPa.
There is a problem that it does not always satisfy all characteristics such as relative dielectric constant and mechanical strength required as various materials for antennas and high frequencies, such as a.
【0011】[0011]
【発明の目的】本発明は、前記課題を解消せんとして成
されたもので、その目的は、高周波域における比誘電率
が5以下であって200MPa以上の抗折強度を有し、
かつ900〜1000℃の温度で焼成可能であり、同時
焼成でCu、Ag、Au等の低抵抗材料を配線導体とし
た多層化が可能な高周波用のアンテナ用基板材料あるい
は各種配線基板材料に好適な低温焼成磁器組成物を提供
することにある。SUMMARY OF THE INVENTION The object of the present invention is to solve the above-mentioned problems, and an object of the present invention is to have a relative dielectric constant in a high frequency region of 5 or less and a transverse rupture strength of 200 MPa or more,
It can be fired at a temperature of 900 to 1000 ° C., and is suitable for a high frequency antenna substrate material or various wiring substrate materials that can be multilayered by using low resistance materials such as Cu, Ag, and Au as wiring conductors at the same time. To provide a low-temperature fired porcelain composition.
【0012】[0012]
【課題を解決するための手段】本発明者等は、前記課題
を鋭意検討した結果、軟化点が約560℃であるB2O
3 −ZnO−SiO2 −Na2 O−Al2 O3 系ガラス
と、比誘電率が約3.7のSiO2 、及びLiの酸化物
から成るフィラーを用い、前記ガラスに対するそれらフ
ィラーの組成比を大とすることにより、焼成温度を10
00℃以下と低くすることが可能となるとともに、比誘
電率及び誘電正接をも低くすることが可能となり、かつ
十分な強度も確保できることを知見し、本発明に至っ
た。Means for Solving the Problems As a result of diligent studies of the above-mentioned problems, the present inventors have found that B 2 O having a softening point of about 560 ° C.
Using 3 and -ZnO-SiO 2 -Na 2 O- Al 2 O 3 based glass, a filler having a specific dielectric constant of an oxide of from about 3.7 SiO 2, and Li, and the composition ratio thereof fillers with respect to the glass By increasing the firing temperature to 10
The present inventors have found that it is possible to reduce the relative dielectric constant and the dielectric loss tangent to a value as low as 00 ° C. or lower, and also to secure a sufficient strength, and have reached the present invention.
【0013】即ち、本発明の低温焼成磁器組成物は、9
00〜1000℃の焼成温度で緻密化する焼結体で、そ
の組成が5〜20重量%の軟化点が約560℃であるB
2 O3 −ZnO−SiO2 −Na2 O−Al2 O3 系ガ
ラスと、酸化物換算で1〜10重量%のLiと、79〜
90重量%のSiO2 から成り、得られた焼結体の比誘
電率が5以下で、抗折強度が200MPa以上であるこ
とを特徴とするものである。That is, the low-temperature fired porcelain composition of the present invention comprises 9
B is a sintered body that is densified at a firing temperature of 00 to 1000 ° C. and has a composition of 5 to 20% by weight and a softening point of about 560 ° C.
2 O 3 —ZnO—SiO 2 —Na 2 O—Al 2 O 3 -based glass, 1 to 10% by weight of Li in terms of oxide, and 79 to
The sintered body obtained is composed of 90% by weight of SiO 2 , and has a relative dielectric constant of 5 or less and a bending strength of 200 MPa or more.
【0014】また、前記B2 O3 −ZnO−SiO2 −
Na2 O−Al2 O3 系ガラスが8〜16重量%と、L
iが酸化物換算で4〜8重量%と、SiO2 が80〜8
7重量%から成るものがより望ましい。The B 2 O 3 —ZnO—SiO 2 —
Na 2 O-Al 2 O 3 based glass and 8-16 wt%, L
i is 4 to 8% by weight in terms of oxide, and SiO 2 is 80 to 8%.
More preferably, it comprises 7% by weight.
【0015】[0015]
【作用】本発明の低温焼成磁器組成物によれば、B2 O
3 −ZnO−SiO2 −Na2O−Al2 O3 系ガラス
を用いることにより、Li及びSiO2 より成るフィラ
ー粒子中に分散させた前記ガラスは、低温で流動してフ
ィラーを濡らし、少量でフィラー間の空隙を充填するこ
とができる。According to the low-temperature fired porcelain composition of the present invention, B 2 O
By using 3 -ZnO-SiO 2 -Na 2 O -Al 2 O 3 based glass, the glass dispersed in the filler particles consisting of Li and SiO 2 may wet the filler to flow at low temperature, with a small amount The voids between the fillers can be filled.
【0016】また、フィラー成分として用いるLiは、
前記ガラスの軟化点を更に低下するように作用し、同じ
くSiO2 はそれ自体、比誘電率が3〜4と低く、前記
ガラスとSiO2 から成るガラスセラミックスのガラス
は結晶化していないことから、比誘電率が4〜5程度と
なる。Li used as a filler component is
Act to further lower the softening point of the glass, like SiO 2 is low itself, relative dielectric constant of 3 to 4, the glass of the glass ceramics comprising the glass and SiO 2 from the not crystallized, The relative dielectric constant is about 4 to 5.
【0017】一方、前記SiO2 は誘電正接が約0.0
008と小さいことから、ガラスセラミックス中の組成
比を大きくすることにより、その誘電正接も小さくで
き、高周波用に最適な低い比誘電率と誘電正接を得るこ
とができる。On the other hand, SiO 2 has a dielectric loss tangent of about 0.0
Since it is as small as 008, by increasing the composition ratio in the glass ceramic, its dielectric loss tangent can be reduced, and a low relative dielectric constant and dielectric loss tangent optimal for high frequencies can be obtained.
【0018】更に、前記ガラスとSiO2 だけでは、緻
密な焼結体が得られない場合もあるが、Liを含有させ
ることで前記ガラスの軟化点が低下することから緻密化
が可能となると考えられ、得られた焼結体の強度は高く
なる。Further, although a dense sintered body cannot be obtained by using only the glass and SiO 2, it is considered that the inclusion of Li lowers the softening point of the glass, so that the glass can be densified. As a result, the strength of the obtained sintered body increases.
【0019】更に、本発明の低温焼成磁器組成物は、9
00〜1000℃の低温度でCu、Ag、Auの配線導
体と同時に焼成できることから、これらの配線導体を具
備した多層配線基板等の微細配線化が容易に達成できる
ことになる。Further, the low-temperature fired porcelain composition of the present invention comprises 9
Since it can be fired simultaneously with the wiring conductors of Cu, Ag, and Au at a low temperature of 00 to 1000 ° C., fine wiring of a multilayer wiring board or the like provided with these wiring conductors can be easily achieved.
【0020】[0020]
【発明の実施の形態】本発明の低温焼成磁器組成物中の
B2 O3 −ZnO−SiO2 −Na2 O−Al2 O3 系
ガラスが5重量%未満の場合、他のフィラーの量が所定
範囲内であっても、フィラー粒子間の空隙が充填され
ず、焼結不良となり、緻密な焼結体が得られず、逆に2
0重量%を越えると過焼結となり、ボイドが発生して同
様に緻密な焼結体が得られなくなる。If B 2 O 3 -ZnO-SiO 2 -Na 2 O-Al 2 O 3 based glass low-temperature fired ceramic composition of the embodiment of the present invention is less than 5 wt%, the amount of other fillers Is within the predetermined range, the voids between the filler particles are not filled, resulting in poor sintering, and a dense sintered body cannot be obtained.
If it exceeds 0% by weight, oversintering occurs, voids are generated, and a dense sintered body cannot be obtained.
【0021】従って、前記ガラスの量は5〜20重量%
に特定され、特に強度を大とし誘電正接を小さくすると
いう点からは、8〜16重量%がより望ましい。Therefore, the amount of the glass is 5 to 20% by weight.
In particular, from the viewpoint of increasing the strength and decreasing the dielectric loss tangent, 8 to 16% by weight is more desirable.
【0022】また、前記ガラスとSiO2 の量はそれぞ
れ限定範囲内であってもLiの含有量が1重量%未満の
場合には、前記ガラスの軟化点が下がらないことから緻
密な焼結体が得られず、10重量%を越えると過焼結と
なり、ボイドが発生して焼結不良となる。If the content of Li is less than 1% by weight, the softening point of the glass does not decrease even if the amounts of the glass and SiO 2 are within the respective limited ranges. When the content exceeds 10% by weight, oversintering occurs, voids occur, and sintering becomes poor.
【0023】従って、前記Liの量は酸化物換算で1〜
10重量%となり、より望ましくは4〜8重量%とな
る。Therefore, the amount of Li is 1 to 1 in terms of oxide.
It is 10% by weight, more preferably 4 to 8% by weight.
【0024】一方、SiO2 の量が79重量%未満の場
合、ガラス量が多く成り過ぎて過焼結となり、90重量
%を越えると逆にガラス量が少な過ぎて焼結不良とな
り、いずれの場合も誘電正接が大となる。On the other hand, if the amount of SiO 2 is less than 79% by weight, the amount of glass becomes too large, resulting in oversintering. If it exceeds 90% by weight, on the contrary, the amount of glass becomes too small, resulting in poor sintering. Also in this case, the dielectric loss tangent becomes large.
【0025】従って、SiO2 の量は、79〜90重量
%に特定され、誘電正接の点からは、80〜87重量%
がより好適である。Therefore, the amount of SiO 2 is specified to be 79 to 90% by weight, and from the point of dielectric loss tangent, it is 80 to 87% by weight.
Is more preferable.
【0026】次に、焼成温度が900℃未満の場合に
は、原料の配合量がそれぞれ所定の量であっても焼結不
良となるものがあり、得られる焼結体は強度が低く、誘
電正接が大となり、逆に1000℃を越えると過焼結と
なるものが多く、焼結不良の場合と同じく得られた焼結
体は強度が低く、誘電正接が大となる他、CuやAg、
Auの導体を用いて同時焼成することができなくなる。Next, when the firing temperature is lower than 900 ° C., sintering failure may occur even if the compounding amounts of the raw materials are respectively predetermined, and the obtained sintered body has low strength and dielectric strength. In many cases, the tangent becomes large, and when the temperature exceeds 1000 ° C., oversintering often occurs. As in the case of poor sintering, the obtained sintered body has low strength, a large dielectric tangent, Cu and Ag. ,
Simultaneous firing using an Au conductor becomes impossible.
【0027】また、かかる低温焼成磁器組成物を用いて
配線基板を作製する場合には、例えば、原料粉末の混合
物を公知のテープ成形法、即ちドクターブレード法や圧
延法等に従い、絶縁層形成用のグリーンシートを成形し
た後、そのシート表面に配線層用のメタライズとして、
CuやAg、Auの粉末、特にCu粉末を含む金属ペー
ストを用いて配線パターンをスクリーン印刷、グラビア
印刷、オフセット印刷等の手段により形成するととも
に、必要に応じてシートにスルーホールを形成して該ス
ルーホール内に前記ペーストを充填し、次いで複数のシ
ートを積層圧着した後、N2 やArガス等の非酸化性雰
囲気中、前記焼成温度で焼成することにより、配線層と
絶縁層とを同時に焼成することができる。When a wiring board is produced using such a low-temperature fired porcelain composition, for example, a mixture of raw material powders is formed by a known tape forming method, that is, a doctor blade method, a rolling method, or the like. After molding the green sheet of the above, as a metallization for the wiring layer on the sheet surface,
A wiring pattern is formed by means of screen printing, gravure printing, offset printing or the like using a metal paste containing Cu, Ag, or Au powder, particularly Cu powder, and if necessary, a through hole is formed in the sheet to form the wiring pattern. After filling the paste into the through holes, and then laminating and pressing a plurality of sheets, the wiring layer and the insulating layer are simultaneously formed by firing at a firing temperature in a non-oxidizing atmosphere such as N 2 or Ar gas. Can be fired.
【0028】[0028]
【実施例】以下、本発明の低温焼成磁器組成物について
具体的に詳述する。先ず、平均粒径が5μm以下のB2
O3 −ZnO−SiO2 −Na2 O−Al2 O3 系ガラ
スと、平均粒径が10μm以下のLiの炭酸塩、及び平
均粒径が5μm以下のSiO2 を表1の組成に従って混
合した。EXAMPLES Hereinafter, the low-temperature fired porcelain composition of the present invention will be described in detail. First, B 2 having an average particle size of 5 μm or less
And O 3 -ZnO-SiO 2 -Na 2 O-Al 2 O 3 based glass, carbonate having an average particle diameter of less 10 [mu] m Li, and an average particle size of less SiO 2 5 [mu] m were mixed according to the composition of Table 1 .
【0029】そして、前記混合物に有機バインダー、可
塑剤、有機溶媒を添加して泥漿を調製し、該泥漿を乾燥
してメッシュパスすることにより、成形用粉末を作製し
た後、該成形用粉末をプレス成形して厚さが6.5mm
の円柱状と、厚さが4.5mmの平板状の2種類の成形
体を得た。Then, an organic binder, a plasticizer, and an organic solvent are added to the mixture to prepare a slurry, and the slurry is dried and passed through a mesh to form a molding powder. Press molding and thickness 6.5mm
, And two types of molded bodies having a thickness of 4.5 mm were obtained.
【0030】かくして得られた成形体を、大気中、45
0℃の温度で脱バインダーした後、表1に示す条件にて
焼成して低温焼成磁器組成物の焼結体を得た。The molded body thus obtained was placed in the air for 45 minutes.
After removing the binder at a temperature of 0 ° C., it was fired under the conditions shown in Table 1 to obtain a sintered body of a low-temperature fired porcelain composition.
【0031】尚、ホウケイ酸ガラスとコージェライトか
ら成るガラスセラミックスを比較例とし、平均粒径が5
μm以下のAl2 O3 −SiO2 −ZnO−B2 O3 −
MgO系ガラス90重量%に、平均粒径が5μm以下の
コージェライトを10重量%添加したものを、前記同様
にして焼結体を作製した。A glass ceramic composed of borosilicate glass and cordierite was used as a comparative example, and the average particle size was 5%.
μm or less of Al 2 O 3 —SiO 2 —ZnO—B 2 O 3 —
A sintered body was prepared by adding 10% by weight of cordierite having an average particle size of 5 μm or less to 90% by weight of an MgO-based glass in the same manner as described above.
【0032】[0032]
【表1】 [Table 1]
【0033】前記評価用の焼結体を用いて焼結性及び比
誘電率、誘電正接、抗折強度をそれぞれ以下の方法で測
定評価した。The sinterability, relative dielectric constant, dielectric loss tangent, and bending strength were measured and evaluated by the following methods using the above-described sintered body for evaluation.
【0034】先ず、前記評価用の焼結体を浸透探傷液に
浸漬して該液の浸透の有無を目視検査し、浸透が認めら
れなかったものを焼結性が良であると判定した。First, the above-mentioned sintered body for evaluation was immersed in a penetrant solution and visually inspected for the presence or absence of permeation of the solution. Those which did not show any permeation were judged to have good sinterability.
【0035】一方、比誘電率及び誘電正接は、前記円柱
状の焼結体から直径10mm、厚さ5mmの試料を切り
出し、10〜30GHzにてネットワークアナライザ
ー、シンセサイズドスイーパーを用いて円柱共振器法に
より測定した。On the other hand, relative permittivity and dielectric loss tangent were determined by cutting a sample having a diameter of 10 mm and a thickness of 5 mm from the cylindrical sintered body, and using a network analyzer and a synthesized sweeper at 10 to 30 GHz. It was measured by the method.
【0036】具体的には、直径50mmの銅板治具の間
に前記試料を挟んで測定し、共振器のTE011モード
の共振特性から比誘電率、誘電正接を算出した。Specifically, measurement was performed with the sample interposed between copper plate jigs having a diameter of 50 mm, and the relative dielectric constant and dielectric loss tangent were calculated from the resonance characteristics of the TE011 mode of the resonator.
【0037】次に、抗折強度は前記平板状の焼結体から
JISR1601の規格に準じて4点曲げ試験片を切り
出し、上スパン10mm、下スパン30mmで4点曲げ
試験を行い抗折強度を算出した。Next, the bending strength was determined by cutting out a four-point bending test piece from the flat sintered body according to the standard of JISR1601, and performing a four-point bending test at an upper span of 10 mm and a lower span of 30 mm. Calculated.
【0038】[0038]
【表2】 [Table 2]
【0039】表の結果から明らかなように、本発明の請
求範囲外の試料番号1、10、11、17、18、2
4、25では、焼結性が悪く、抗折強度も200MPa
未満と低く、同じく焼成温度が1000℃を越える試料
番号34では、焼結性は良いものの抗折強度が200M
Pa未満と低く、またガラスの種類が異なる試料番号3
5及び36は焼結性が悪い上、誘電特性が測定できず、
抗折強度も200MPa未満と低いものとなっており、
比較例の試料番号37では焼結性は良いものの、抗折強
度が200MPa未満と低くなっている。As is evident from the results in the table, the sample numbers 1, 10, 11, 17, 18, and 2, which are out of the claims of the present invention.
In the case of 4, 25, the sinterability is poor and the bending strength is 200 MPa.
Sample No. 34, which has a lower sintering temperature than 1000 ° C., has good sinterability but has a transverse rupture strength of 200M.
Sample No. 3 as low as less than Pa and different kinds of glass
Nos. 5 and 36 have poor sinterability and the dielectric properties cannot be measured.
Flexural strength is also low, less than 200 MPa,
In the sample No. 37 of the comparative example, the sinterability was good, but the bending strength was low at less than 200 MPa.
【0040】それに対して、本発明のものはいずれも焼
結性が良く、抗折強度も200MPa以上を示し、誘電
特性も満足すべきものであることが分かる。On the other hand, it can be seen that all of the present inventions have good sinterability, a flexural strength of 200 MPa or more, and satisfactory dielectric properties.
【0041】[0041]
【発明の効果】以上詳述した通り、本発明の低温焼成磁
器組成物は、比誘電率が低いことからアンテナ用材料と
しては、空中に電磁波を放射する際の反射が小さく放射
効率の良好なアンテナを製造することが可能となり、ま
た、誘電正接が小さいことから誘電体損失が小さく、配
線導体としてCu、Ag、Au等の低抵抗材料を用いる
ことが可能であるため導体損が小さく、アンテナ給電線
の伝送損失を小さくできる。As described above in detail, the low-temperature fired porcelain composition of the present invention has a low relative dielectric constant, and therefore, as an antenna material, has a low reflection when radiating electromagnetic waves into the air and has a good radiation efficiency. The antenna can be manufactured, the dielectric loss is small because the dielectric loss tangent is small, and the conductor loss is small because a low-resistance material such as Cu, Ag, or Au can be used as the wiring conductor. Transmission loss of the feed line can be reduced.
【0042】しかも、高強度のためチップコンデンサや
チップ抵抗等の実装時のリフロー作業、あるいはMMI
C等の半導体素子の実装時のダイボンド作業等に対して
も何ら問題なく、特別な補強を要することなく単体で用
いることができ、アンテナと同一基板上に回路を形成す
ることも可能であり、緻密な焼結体が得られるので、製
造工程における耐薬品性に優れたアンテナが得られる。In addition, due to the high strength, reflow work at the time of mounting chip capacitors and chip resistors, or MMI
There is no problem with die bonding work at the time of mounting semiconductor elements such as C, it can be used alone without special reinforcement, it is also possible to form a circuit on the same substrate as the antenna, Since a dense sintered body can be obtained, an antenna having excellent chemical resistance in the manufacturing process can be obtained.
【0043】また、高周波用途のマイクロ波用基板材料
としても最適であり、高速信号伝送が可能な上、小型化
も実現でき、更に高強度化により入出力端子部でのリー
ドの接合や、アンテナ用材料の場合と同様、実装におけ
る基板の信頼性を向上できる上、900〜1000℃の
低温度で焼成可能なため、Cu、Ag、Au等による配
線を同時焼成により形成することができ、各種高周波用
の多層配線基板や半導体素子収納用パッケージの基板と
して好適である。It is also suitable as a microwave substrate material for high-frequency applications, capable of high-speed signal transmission, realizing miniaturization, and further enhancing the strength to join leads at input / output terminals, As in the case of the material, the reliability of the substrate in mounting can be improved, and since it can be fired at a low temperature of 900 to 1000 ° C., wirings of Cu, Ag, Au, etc. can be formed by simultaneous firing. It is suitable as a high-frequency multilayer wiring board or a board for a package for housing semiconductor elements.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) C04B 35/14 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. 7 , DB name) C04B 35/14
Claims (2)
iO2 −Na2 O−Al2 O3 系)ガラスが5〜20重
量%と、リチウム(Li)が酸化物換算で1〜10重量
%と、シリカ(SiO2 )が79〜90重量%から成
り、900〜1000℃の焼成温度で緻密化する焼結体
であって、該焼結体の比誘電率が3〜5であり、抗折強
度が200MPa以上であることを特徴とする低温焼成
磁器組成物。1. A borosilicate zinc (B 2 O 3 -ZnO-S
iO and 2 -Na 2 O-Al 2 O 3 system) 5 to 20 wt% glass, and 1 to 10 wt% of lithium (Li) is in terms of oxide, silica (SiO 2) from 79-90 wt% A sintered body which is densified at a firing temperature of 900 to 1000 ° C., wherein the sintered body has a relative dielectric constant of 3 to 5 and a transverse rupture strength of 200 MPa or more. Porcelain composition.
−SiO2 −Na2O−Al2 O3 系)ガラスが8〜1
6重量%と、リチウム(Li)が酸化物換算で4〜8重
量%と、シリカ(SiO2 )が80〜87重量%から成
ることを特徴とする請求項1記載の低温焼成磁器組成
物。2. The zinc borosilicate (B 2 O 3 —ZnO)
—SiO 2 —Na 2 O—Al 2 O 3 ) glass is 8 to 1
And 6 wt% of lithium (Li) oxide and 4-8 wt% in terms of silica (SiO 2) is a low temperature sintered ceramic composition of claim 1, wherein the consisting of 80 to 87 wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19247796A JP3323069B2 (en) | 1996-07-22 | 1996-07-22 | Low temperature firing porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19247796A JP3323069B2 (en) | 1996-07-22 | 1996-07-22 | Low temperature firing porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1036166A JPH1036166A (en) | 1998-02-10 |
| JP3323069B2 true JP3323069B2 (en) | 2002-09-09 |
Family
ID=16291950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19247796A Expired - Fee Related JP3323069B2 (en) | 1996-07-22 | 1996-07-22 | Low temperature firing porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3323069B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002368531A (en) * | 2001-06-06 | 2002-12-20 | Hitachi Metals Ltd | Surface mounting type antenna and its production method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6374957A (en) * | 1986-09-16 | 1988-04-05 | 日本電気株式会社 | Low temperature sinterable low dielectric constant inorganic composition |
| US4849379A (en) * | 1988-01-28 | 1989-07-18 | E. I. Du Pont De Nemours And Company | Dielectric composition |
-
1996
- 1996-07-22 JP JP19247796A patent/JP3323069B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1036166A (en) | 1998-02-10 |
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