JP3323606B2 - Image display device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image display device.

[0002]

2. Description of the Related Art Conventionally, image display devices include a plasma display panel, an EL display device, an image display device using an electron beam, and a fluorescent display device. These include larger screens,
Demands for higher definition and higher quality are increasing, and image display devices that meet these requirements are being developed.

FIG. 9 is a plan view and a sectional view showing an example of a conventional fluorescent display device.

In FIG. 1, reference numeral 101 denotes a face plate which is a transparent substrate such as a glass plate serving as a display surface. 10
Reference numeral 2 denotes a cup-shaped lower plate which is bonded to the periphery of the substrate 101 and forms a back plate. The substrate 101 and the lower plate 102 constitute an airtight container, and the inside of the container is kept at a high vacuum. 104 is an anode pattern,
105 is a control grid, 106 is a filament, 107 is a getter, and 108 is a getter diffusion preventing plate.

[0005] The getter diffusion preventing plate 108 is fixed to the end side of the substrate 101 with the bottom portion of the substantially L-shaped getter diffusion preventing plate 108 fixed thereto, and is arranged substantially at the center of the upright surface of the getter diffusion preventing plate 108. One end of the filament is fixed. The getter 107 is fixed on the upright surface of the getter diffusion preventing plate 108 on the side opposite to the display section by means such as spot welding or brazing.

In manufacturing the fluorescent display device having the above structure, a plurality of display portions and getters 107 are mounted on the substrate 101.
After being placed on the upper surface, a cup-shaped lower plate 102 is overlaid on the substrate 101, low-melting glass or the like is applied, heated in an electric furnace, and fixed to form an airtight container. Thereafter, the space is evacuated by a vacuum pump through an exhaust pipe (not shown).

Subsequently, the heating device such as a hot plate is used to overheat and degas, and the exhaust pipe is overheated and closed by a gas burner, and the getter material set in the vacuum vessel is blown to complete the display device.

[0008]

However, the above-mentioned conventional method of mounting the getter material diffusion preventing plate has the following problems.

After arranging a plurality of display portions and getters on a substrate, a cup-shaped lower upper plate is superimposed on the substrate, coated with a low-melting glass or the like, and heated and fixed in an electric furnace to be airtight. Form a container. Thereafter, the interior space of the container is evacuated by a vacuum pump through an exhaust pipe, followed by heating and degassing.After that, the exhaust pipe is heated and sealed with a gas burner, and the getter material placed in the vacuum container is removed. Skip. However, if the getter material diffused from the getter adheres to the display unit or the like when flying the getter material, it causes deterioration or instability of the characteristics of the display unit. It is indispensable to provide a diffusion preventing plate between them. However, when the substrate, the lower plate, the exhaust pipe, and the getter are attached, the getter diffusion prevention plate must be attached at the same time, which increases the number of parts and the number of steps. Also, when using a low-melting glass when fixing the getter diffusion prevention plate between the display unit and the getter, the viscosity of the low-melting glass applied at the time of temperature rise decreases, and the low-melting glass flows on the element, Alternatively, the diffusion prevention plate may be displaced, and further, the diffusion of the low-melting glass or the getter material may cause the function of the display unit to be destroyed or deteriorated.

[0010]

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and it is an object of the present invention to simplify the manufacturing method, reduce the number of parts, and reduce the number of steps. It is an object of the present invention to provide an image display device having a simple configuration capable of improving productivity, reducing costs, and improving yield.

In order to achieve the above object, the present invention provides a pressure-reducing space formed by a face plate having a phosphor and a back plate, and an energy for emitting the phosphor in the reduced-pressure space.
With disposing the Energy beam source or electrode, in the image display device having an exhaust pipe and a getter to reduce the pressure between the face plate and the back plate, said getter and said energy beam source or electrode
Placing the exhaust pipe between the an image display device characterized. Here, at least one opening may be formed in the pipe wall of the exhaust pipe, a part of the pipe wall of the exhaust pipe may be deleted, or a cut may be provided in a part of the exhaust pipe.
An electron source is provided on a back plate as the energy beam generation source .

[0012]

Hereinafter, with reference to the drawings, an embodiment of a fluorescent display device and an image display device using a surface conduction electron-emitting device as an electron source will be described in detail for a structure and a manufacturing method according to the present invention.

[0014]

【Example】

(Embodiment 1) FIG. 1 is a top view showing an example of a fluorescent display device.

In FIG. 1, reference numeral 1 denotes a transparent substrate such as a glass plate serving as a display surface, which forms a face plate. Reference numeral 2 denotes a cup-shaped lower plate adhered to the substrate 1 at the peripheral edge of the substrate. The substrate 1 and the lower plate 2 serving as a back plate constitute an airtight container, and the inside can be kept at a high vacuum. ing. 4 is an anode pattern (7 segments), 5 is a control grid, 6 is a filament, 7 is a getter, and 9 is an exhaust pipe. After arranging a plurality of display portions including an anode pattern 4, a grid 5, a filament 6, and the like and a getter 7 on the substrate 1, low-melting glass is applied in advance to a portion to be attached, and the cup-shaped lower plate is removed from the substrate. 1 and fixed with a jig or the like, placed in an electric furnace, and the electric furnace is heated to a temperature for heat treatment for sealing low melting glass. Then, the mixture is slowly cooled and returned to room temperature, and the airtight container is taken out of the electric furnace. The exhaust pipe is lower plate 2
And is sealed to the lower plate 2 in advance. On this occasion,
The exhaust pipe 9 is attached so as to separate the portion where the electrodes and the like are arranged from the portion where the getter 7 is arranged, thereby preventing the diffusion material from the getter 7 from diffusing into the display unit. Thereafter, the interior space is evacuated by a vacuum pump through an exhaust pipe 9.

Subsequently, the gas is heated by a heating means such as a hot plate, degassed, and the exhaust pipe is heated and closed by a gas burner. Then, the getter 7 installed in the vacuum space
To heat the getter material to complete the display device.

(Embodiment 2) As an image display device using an electron beam, for example, a surface conduction electron-emitting device is used as an electron source for generating an electron beam in a vacuum space sandwiched between a face plate and a back plate. A thin image display apparatus for displaying an image by accelerating the electron beam, irradiating a phosphor to emit light, and displaying an image has been filed by the present applicant (Japanese Patent Application Laid-Open No. Hei 3 (1994)).
-261024).

In addition, as a surface conduction electron-emitting device, a device using an SnO ₂ film as a thin film, a device using an Au thin film [G. Dittmer: "Thin Solid Fi
lms ", 9,317 (1972)], In ₂ 0 ₃ / Sn
O ₂ thin film [M. Hartwell and
C. G. FIG. Fonstad: "IEEE. Trans. E
D Conf. ", 519 (1975)] By carbon thin film [Hisashi Araki et al .: Vacuum, Vol. 26, No. 1, 22]
P. (1983)].

FIG. 2 is a partially cutaway perspective view showing another function of the image display device of the present invention. Hereinafter, a method for manufacturing the image display device will be described.

In FIG. 1, reference numeral 11 denotes a back plate;
Is an element electrode, 14 is an electron emission portion, 15 is an electron passage hole, 1
6 is a grid, 17 is a face plate, 18 is a phosphor, 19 is a metal back, 21 is an outer frame, 22 is an exhaust pipe,
23 is a getter.

First, a surface conduction electron-emitting device is manufactured on a back plate 11 made of an insulating substrate such as glass or ceramic. The electron-emitting device used in the present invention will be described below.

FIG. 3 shows the structure of an electron-emitting device used in the present image display device. In the figure, 11 is a back plate, 35 and 36 are device electrodes, 34 is a thin film including an electron-emitting portion, and 33 is an electron-emitting portion.
56822).

In the present invention, a thin film 34 including an electron emitting portion is provided.
Among them, the electron emitting portion 33 is made of conductive fine particles having a particle size of several tens of A, and the thin film 34 including the electron emitting portions other than the electron emitting portion 33 is made of a fine particle film. Note that the fine particle film described here is a film in which a plurality of fine particles are aggregated, and has a fine structure not only in a state where the fine particles are individually dispersed and arranged,
A film in which fine particles are adjacent to each other or overlap each other (including islands).

Alternatively, the thin film 34 including the electron emitting portion may be a carbon thin film in which conductive fine particles are dispersed.

Pd, Ru, Ag, Au, Ti, I, Pd, Ru, Ag
n, Cu, Cr, Fe, Zn, Sn, Ta, W, and Pb, _{etc., PdO, SnO 2, In 2} 0 3, PbO, Sb 2 0
Oxides such as ₃ , HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆
, YB ₄ , GdB _{4 and} other oxides, TiC, ZrC, H
Carbides such as fC, TaC, SiC, WC, TiN, Zr
There are nitrides such as N and HfN, semiconductors such as Si and Ge, carbon, AgMg, NiCu, Pb, and Sn.

The thin film 34 including the electron-emitting portion is formed by a vacuum deposition method, a sputtering method, a chemical vapor deposition method, a dispersion coating method, a dipping method, a spinner method, or the like.

Various methods are conceivable as a method of manufacturing the electron-emitting device having the electron-emitting portion 33. One example is shown in FIG. In FIG. 4A, reference numeral 11 denotes a back plate on which device electrodes 35 and 36 are formed. Then FIG.
As shown in (b), an electron emitting portion forming thin film 32 is formed, and further, an electron emitting portion 33 is formed. The thin film 32 is, for example, a fine particle film.

The surface conduction electron-emitting device in which conductive fine particles are dispersed in advance can be constituted by partially changing the basic manufacturing method of the basic device structure of the present invention. .

As the electron source, in addition to the surface conduction electron-emitting device, a thermionic electron source using a hot cathode, a field emission electron-emitting device (WP Dyke & WW Dolan, "
Field emission ", Advance i
n Electron Physics, 8, 89 (1
956) and C.I. A. Spindt, "Physical
properties of thin-film
field emission cathodes w
is mollybdenum cones ", J. Am.
Appl. Phys. , 47, 5248 (1976).
Etc.), metal / insulating layer / metal-type electron-emitting device (C.A.M.
ead, "The tunnel-emission
amplifier, J .; Appl. phys. ,
32, 646 (1961)) can be used in the present invention. Next, as shown in FIG. 2, a resist is patterned and etched above the back plate 11 manufactured by the above-described method for manufacturing an electron-emitting device, thereby forming, for example, a 1 μm thick Au wiring. Next,
After the preparation of the above-mentioned electron-emitting device, for example, SiO ₂
A film is formed by sputtering or the like, and Au, A
A metal such as l, Cu or the like is deposited, and the electron passing holes 15 are provided by etching to form a grid 16.

On the other hand, the face plate 1 of the image display device
A fluorescent material 18 is applied to the inner surface of 7 and a back metal 19 having conductivity is formed on the surface of the fluorescent material. Next, an electric furnace equipped with a container capable of heating the entire image display device by applying a low-melting glass in advance to portions where the face plate 17, the outer frame 21, the back plate 11, the exhaust pipe 22, and the getter 23 are to be attached (FIG. (Not shown).
At this time, the exhaust pipe is attached to an outer frame portion at a position where diffusion substances from the getter are prevented from diffusing into the element.
Finally, the back plate 11 and the face plate 17 are fixed with a jig or the like, and are placed in an electric furnace, and the electric furnace is heated to a temperature for heat treatment for sealing low-melting glass. Thereafter, the temperature is slowly cooled to room temperature, and the image display device is taken out of the electric furnace.

Next, the inside of the image display device is evacuated to 10 −6 Torr or less by a vacuum pump through an exhaust pipe attached to the image display device shown in FIG. After that, a voltage is applied between the electrodes through the wiring to conduct an electric current, thereby forming an electron emission portion.

Subsequently, the image display device is heated by a heating means such as a hot plate while evacuating, and then the exhaust pipe 22 of the image display device is heated by a gas burner and sealed off. Next, the getter 23 installed in the vacuum vessel is skipped to complete the image display device.

By performing the above steps, an image display device can be manufactured, but the present invention is not particularly limited to the above steps.

Although the embodiment of the present invention has been described above, the present invention is not limited to an image display apparatus using a fluorescent display tube or an electron source of a surface conduction electron-emitting device, but a plasma display panel. It is also effective for other display devices and recording devices.

[0035]

The present invention will be described below in detail with reference to examples.

(Example 1) An example in which the present invention is applied to a fluorescent display tube as shown in FIG. 1 according to the preferred embodiment 1 will be described below.

FIG. 1 is a top view showing a fluorescent display device.

In FIG. 1, reference numeral 1 denotes a transparent substrate of a glass plate serving as a display surface, and reference numeral 2 denotes a cup-shaped lower plate adhered to the substrate 1 at the periphery of the substrate. The container is constructed and the inside is kept at high vacuum. 4 is an anode pattern, 5 is a control grid, 6 is a filament, 7 is a getter, and 9 is an exhaust pipe.

More specifically, after a plurality of display portions are formed on the substrate 1, the getter 7 and the exhaust pipe 9 are arranged on the substrate 1, and a low-melting glass (Nippon Electric Glass Co., Ltd. LS-3081) is applied, a cup-shaped lower plate is superimposed on the substrate 1, fixed with a jig or the like, and put into an electric furnace. The electric furnace was heated to a temperature of 410 ° C. for heat treatment for sealing the low-melting glass. Then, the mixture is slowly cooled and returned to room temperature, and the airtight container is taken out of the electric furnace. On this occasion,
An exhaust pipe 9 was attached to a portion of the substrate 1 at a position where diffusion material from the getter 7 was prevented from diffusing into the element.
After that, the space is passed through the exhaust pipe 9 and is
Evacuation was performed at 0-6 Torr or less.

Subsequently, the gas is heated to 130 ° C. by a heating means such as a hot plate, degassed, and the exhaust pipe is heated and sealed by a gas burner, and the getter 7 installed in the vacuum vessel is blown to complete the display device. Was.

By arranging the exhaust pipe and the getter diffusion preventing plate so as to also serve as a fluorescent display device, the number of parts can be reduced, and the production efficiency such as yield can be improved.

(Example 2) An example of manufacturing an image display device using PdO as an electron-emitting material of an electron-emitting device as shown in FIG. 2 according to the preferred embodiment 2 will be described below. First, an element electrode 13 was formed on a back plate 11 made of a glass substrate by a lift-off method, and an organic Pd solution (CCP4230 manufactured by Okuno Pharmaceutical Co., Ltd.) was applied between the electrodes and fired. Next, the resist pattern was patterned and etched to cover the gap between the two electrodes, and a patterned electron emission thin film having a length of 280 μm and a width of 30 μm was formed in the gap direction. By these steps, the surface conduction electron-emitting device is placed on a glass substrate by 600
X400 pieces were produced. Further, the resist was patterned and etched to form a 1 μm thick Au wiring. After the formation of the electron-emitting device, an insulating material, SiO ₂ , was formed by sputtering, Au was further formed, and etching was performed to form the electron passage holes 15 and the grid 16.

Next, a face plate 17, a frame 21 having a height of 5 mm and the above-mentioned back plate 11, an exhaust pipe 22 for evacuating the inside, and a getter for adsorbing the released gas are provided. A low-melting glass (LS-308 manufactured by NEC Corporation) is previously attached to the portion to be attached.
1) was applied. At this time, the exhaust pipe 22 was placed between the getter 23 and the element, and when the getter material was blown off, the exhaust pipe 22 was attached to a position where the getter material did not ride on the element, and was placed in an electric furnace (not shown). The temperature of the electric furnace was increased, and heating was performed at 410 ° C. for 1 hour. The temperature of the electric furnace was slowly cooled, and then removed. Next, the inside of the image display device was evacuated to 10 −6 Torr or less by a vacuum pump from the exhaust pipe 22. Thereafter, a voltage was applied between the electrodes through the wiring, and a current was applied to form an electron emission portion.

Subsequently, the image display device is heated to about 130 ° C. by a hot plate, and the exhaust pipe 2 of the image display device is heated.
2 was heated with a gas burner and sealed off. Finally, the getter 23 installed in the vacuum vessel was heated by energizing to get rid of the getter material.

As described above, the mounting position of the exhaust pipe is arranged between the getter and the element,
When the getter material is blown off, the getter material does not diffuse on the element and the like, and the number of parts is reduced. Also, since the low-melting glass may be applied only to the portion where the outer frame and the exhaust pipe are fixed, the low-melting glass does not flow on the element,
In addition, the position of the exhaust pipe of the outer frame is always fixed at a certain place,
There is no shift.

As described above, since the semiconductor device can be manufactured with a good yield without any failure, the productivity can be improved and the cost can be reduced.

(Embodiment 3) FIG. 5 is a partially cutaway perspective view of another image display device of the present invention.

First, as in the second embodiment, the back plate 1
An electron-emitting device, a grid, and the like were fabricated on notch 1 (not shown).

Next, a face plate 17, a frame 21 having a height of 5 mm and the above-mentioned back plate 11, an exhaust pipe 42 for evacuating the inside, and a getter for adsorbing the released gas are provided by applying a fluorescent substance in advance to impart conductivity. A low-melting glass (LS-308 manufactured by NEC Corporation) is previously attached to the portion to be attached.
1) was applied. The exhaust pipe 42 in the present embodiment has an opening 43 in a part of the pipe wall.
When the getter material was placed between the device No. 3 and the element and the getter material was blown off, the getter material was mounted at a position where the getter material did not ride on the element, and was placed in an electric furnace (not shown). At this time, the temperature of the electric furnace rises,
Heated at 410 ° C. for 1 hour. Then, the temperature of the electric furnace was slowly cooled, and then taken out.

Next, the inside of the image display device was evacuated to 10 −6 Torr or less by a vacuum pump from the exhaust pipe 42. Thereafter, a voltage was applied to the electrode tube through the wiring, and a current was applied to form an electron emission portion 14.

Subsequently, the image display device is heated to about 130 ° C. by a hot plate, and the exhaust pipe 4 of the image display device is heated.
2 was heated with a gas burner and sealed off. Finally, the getter 23 installed in the vacuum vessel was blown off.

As described above, when the location of the exhaust pipe is arranged between the getter and the element, when the getter material is blown off, the getter material does not diffuse onto the element and the like, and the number of parts is small. Become. In addition, the low-melting glass only needs to be applied to a portion where the outer frame and the exhaust pipe are fixed, so that the low-melting glass does not flow on the element, and the position of the exhaust pipe of the outer frame is always fixed at a fixed position. Therefore, the exhaust pipe does not shift.

As described above, since the semiconductor device can be manufactured with a good yield without any failure, the productivity can be improved and the cost can be reduced. Also, since many holes are formed in the exhaust pipe, the conductance is improved and the exhaust time is shortened.

FIG. 6 shows the shape of the exhaust pipe of this embodiment.

In this embodiment, as shown in FIG. 6A, the exhaust pipe 42 having a large number of holes formed in the wall of the exhaust pipe is used. However, the present invention is not limited to this. For example, as shown in FIG. Exhaust pipe 5
The shape may be a semi-cylindrical shape such as 2, and the present invention is not particularly limited to the above shape.

(Embodiment 4) First, an electron-emitting device 14, a grid 16, and the like are formed on a back plate 11 similar to that in Embodiment 2.

FIG. 7 shows an example of a partially cutaway perspective view of the image display device of the present invention.

First, a phosphor is preliminarily applied to impart conductivity to the face plate 17, the frame 21 having a height of 5 mm, the back plate 11, the exhaust pipe 62 for evacuating the inside, and a getter for adsorbing the released gas. A low-melting glass (LS-308 manufactured by NEC Corporation) is previously attached to the portion to be attached.
1) was applied. The exhaust pipe 62 in the present embodiment is an exhaust pipe having a cut in a part of the exhaust pipe so that the getter 23 enters the part on the side to be evacuated. The exhaust pipe 62 is attached to a position where the getter material does not ride on the element when the getter is skipped in a form in which the getter 23 is put in the exhaust pipe 62 so as to wrap the getter 23 between the getter 23 and the element, It was placed in an electric furnace (not shown). At this time, the temperature of the electric furnace was increased and heated at 410 ° C. for 1 hour. Then, the temperature of the electric furnace was gradually cooled, and the electric furnace was taken out.

Next, the inside of the image display device was evacuated to 10 −6 Torr or less from the exhaust pipe 62 by a vacuum pump. After that, a voltage was applied between the electrodes through the wirings, and a current was applied to form the electron emission portions 14.

Subsequently, the image display device is heated to about 130 ° C. by a hot plate, and the exhaust pipe 6 of the image display device is heated.
2 was heated with a gas burner and sealed off. Finally, the getter 23 installed in the vacuum vessel was blown off.

As described above, by disposing the mounting position of the exhaust pipe 62 between the getter 23 and the element, the getter material does not spread over the element when the getter is skipped, and the number of parts is reduced. Become. In addition, the low-melting glass only needs to be applied to a portion where the outer frame and the exhaust pipe are fixed, so that the low-melting glass does not flow on the element, and the position of the exhaust pipe of the outer frame is always fixed at a fixed position. Therefore, the exhaust pipe does not shift.

As described above, since the semiconductor device can be manufactured with a good yield without any failure, the productivity can be improved and the cost can be reduced.

Further, since the getter is provided in the exhaust pipe, the space between the exhaust pipe and the getter is reduced, and the effect of preventing the diffusion of the getter is further improved.

(Embodiment 5) FIG. 8 shows an example of a perspective view of an image display device of the present invention.

First, as in the second embodiment, the back plate 1
1. An electron-emitting device, a grid, and the like are formed on 1.

A face plate 17, a frame 21 having a height of 5 mm, the above-described back plate 11, an exhaust pipe 22 for evacuating the inside, and a getter 23 for adsorbing the released gas are attached by applying a fluorescent substance in advance and imparting conductivity. A low-melting glass (LS-3081 manufactured by Nippon Electric Glass Co., Ltd.) was applied in advance to the part to be cooled. At this time, the exhaust pipe 22 was placed between the getter 23 and the element, and was attached to a position where the getter material would not ride on the element when the getter was skipped. As shown in FIG. 8, two exhaust pipes and two getters were provided. The image display device was placed in an electric furnace (not shown). Increase the temperature of the electric furnace, 41
Heated at 0 ° C. for 1 hour. Thereafter, the temperature of the electric furnace was slowly cooled, and then taken out. Next, the inside of the image display device is 10-6 Torr by a vacuum pump from the exhaust pipe 22.
Evacuation was performed below. A voltage was applied between the electrodes through the wiring, and an energization process was performed to form an electron emission portion (not shown).

Subsequently, the image display device was heated to about 130 ° C. by a hot plate, and the exhaust pipe 2 of the image display device was heated.
2 was heated with a gas burner and sealed off. Finally, the getter material 23 installed in the vacuum vessel was blown off.

As described above, the mounting position of the exhaust pipe is arranged between the getter and the element,
When the getter material is blown off, the getter material does not diffuse on the element and the like, and the number of parts is reduced. Also, since the low-melting glass may be applied only to the portion where the outer frame and the exhaust pipe are fixed, the low-melting glass does not flow on the element,
Further, since the position of the exhaust pipe of the outer frame is always fixed at a fixed position, the exhaust pipe does not shift.

In this embodiment, two exhaust pipes are provided.
The number is not limited to the number but may be more than one, and the number is not particularly limited. By providing the two getters and the exhaust pipe in this way, the time required to exhaust the space between the back plate and the face plate is further reduced, and the area over which the getter material is thrown out is doubled. Vacuum maintenance improved.

As described above, since the semiconductor device can be manufactured with good yield without failure, the productivity is improved and the manufacturing cost is reduced.

[0071]

According to the present invention, the manufacturing method is simplified, the number of parts is reduced, the number of manufacturing steps can be reduced, and the productivity, cost, and yield can be improved.
An image display device having a simple configuration can be provided.

[Brief description of the drawings]

FIG. 1 is a partially omitted plan view showing an embodiment of the present invention.

FIG. 2 is a partially cutaway perspective view showing another embodiment of the present invention.

3A and 3B show a configuration example of an electron-emitting device used in the present invention, wherein FIG. 3A is a plan view and FIG. 3B is a side view.

FIG. 4 is a process chart showing a manufacturing process of the electron-emitting device of FIG. 3;

FIG. 5 shows still another embodiment of the present invention, in which (a)
Is a partially cutaway perspective view, and (b) is a plan view of the same.

6A is an enlarged view of an exhaust pipe used in the embodiment of FIG. 5, and FIG. 6B is an enlarged view of another exhaust pipe.

FIG. 7 is a partially cutaway perspective view showing still another embodiment of the present invention.

FIG. 8 is a partially cutaway perspective view showing still another embodiment of the present invention.

FIG. 9 shows a configuration of a conventional image display device.
(A) is a partially omitted plan view, and (b) is a partially omitted side view.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Back plate 13 Electrode 14 Electron emission part 17 Face plate 18 Phosphor 19 Back metal 21 Frame 22, 42, 52, 62 Exhaust pipe 23 Getter

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-5-114373 (JP, A) JP-A-4-132147 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01J 29/94 H01J 31/12 H01J 31/15

Claims (5)

(57) [Claims] 1. A reduced pressure space is formed by a face plate having a phosphor and a back plate, and an energy beam source or an energy beam source for emitting the phosphor in the reduced pressure space.
In an image display device having an electrode and an exhaust pipe and a getter for reducing pressure between the face plate and the back plate, the energy beam generation source is also provided.
Or the exhaust pipe is arranged between an electrode and the getter . 2. The image display device according to claim 1, wherein at least one opening is formed in a wall of the exhaust pipe. 3. The image display device according to claim 1, wherein a part of a pipe wall of the exhaust pipe is deleted. 4. The image display device according to claim 1, wherein the exhaust pipe has a cut in a part thereof. 5. An energy beam on the back plate.
The image display device according to any one of claims 1 to 4, wherein an electron source is provided as a system generation source .