JP3333717B2 - Ion implantation method to the inner surface of conductive hollow body - Google Patents
Ion implantation method to the inner surface of conductive hollow bodyInfo
- Publication number
- JP3333717B2 JP3333717B2 JP22088697A JP22088697A JP3333717B2 JP 3333717 B2 JP3333717 B2 JP 3333717B2 JP 22088697 A JP22088697 A JP 22088697A JP 22088697 A JP22088697 A JP 22088697A JP 3333717 B2 JP3333717 B2 JP 3333717B2
- Authority
- JP
- Japan
- Prior art keywords
- hollow body
- plasma
- ions
- ion implantation
- plasma generator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005468 ion implantation Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title claims description 7
- 150000002500 ions Chemical class 0.000 claims description 28
- 238000007599 discharging Methods 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 239000007787 solid Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000002344 surface layer Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、プラズマ雰囲気
のイオンを中空体の内部表面に注入させて、中空体の内
部表面の表層改質を図る導電性中空体の内部表面へのイ
オン注入法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for injecting ions in a plasma atmosphere into the inner surface of a hollow body to improve the surface layer of the inner surface of the hollow body. Things.
【０００２】[0002]
【従来の技術】イオン注入法は、数１０ｋｅＶ〜ＭｅＶ
に加速した粒子（イオン）を固体に照射し、固体内部に
打ち込む技術である。イオンは、固体表面原子をスパッ
タリング効果によって弾き飛ばす作用もあるが、多くは
固体内部につきささる。このような大きな運動エネルギ
ーを持ったイオンが固体表面に衝突し侵入する際に、様
々な物理的現象及び化学的現象が起こり、これを利用し
て固体表面の表層改質を図ることができるのが知られて
いる。2. Description of the Related Art Ion implantation is performed at several tens keV to MeV.
This is a technology that irradiates a solid with particles (ions) accelerated into the solid and drives it into the solid. Ions also have the effect of repelling the solid surface atoms by the sputtering effect, but most of them are inside the solid. When ions having such large kinetic energy collide with and penetrate the solid surface, various physical phenomena and chemical phenomena occur, which can be used to modify the surface layer of the solid surface. It has been known.
【０００３】[0003]
【発明が解決しようとする課題】ところで、固体の外部
表面にイオンを垂直に注入させることは容易であるが、
中空体の内部表面にイオンを注入させる場合、イオンは
直進性を有するため、特に、中空体の内径に対してその
長さが長いときには、イオンを中空体の内部表面に垂直
に注入させることが困難となり、また、図４に図示する
ように、イオンを中空体２の内部表面２ａに対して傾斜
角度を有して注入させると、イオンは固体表面原子をス
パッタリング効果によって弾き飛ばして、固体内部に注
入させることができず、このため、中空体の内部表面に
イオンを注入させるのは困難であった。By the way, it is easy to vertically implant ions into the outer surface of a solid,
When ions are implanted into the inner surface of the hollow body, the ions have a straight-line property.In particular, when the length is longer than the inner diameter of the hollow body, the ions may be implanted perpendicularly to the inner surface of the hollow body. When ions are implanted at an inclined angle with respect to the inner surface 2a of the hollow body 2 as shown in FIG. 4, the ions bounce off atoms on the solid surface by the sputtering effect, and Therefore, it was difficult to implant ions into the inner surface of the hollow body.
【０００４】この発明は、上記のような課題に鑑み、そ
の課題を解決すべく創案されたものであって、その目的
とするところは、注入が困難であった中空体の内部表面
に垂直にイオンを注入させて、中空体の内部表面の表層
改質を図ることのできる導電性中空体の内部表面へのイ
オン注入法を提供することにある。The present invention has been made in view of the above problems, and has been made in order to solve the problems. The object of the present invention is to vertically extend the inner surface of a hollow body which has been difficult to inject. It is an object of the present invention to provide a method for implanting ions into the inner surface of a conductive hollow body, which can improve the surface layer of the inner surface of the hollow body by injecting ions.
【０００５】[0005]
【課題を解決するための手段】以上の目的を達成するた
めに、この発明は、プラズマ発生器の先端側に、絶縁筒
体を介して非接触状態でしかも放電しない距離に離し
て、導電性の中空体の一端側を取り付け、プラズマ発生
器で発生したプラズマを中空体の内部に導入し、導電性
の中空体の内部をプラズマ雰囲気にし、接地電位に対し
てマイナスの電圧をかけて中空体をマイナスの電位状態
にして、プラズマ雰囲気のイオンを中空体の内部表面に
注入させる手段よりなるものである。SUMMARY OF THE INVENTION To achieve the above object, the present invention provides a plasma generator comprising an insulating tube
Keep away from the body without contact and without discharging
And attach one end of the conductive hollow body to generate plasma
The plasma generated in the vessel is introduced into the hollow body, the inside of the conductive hollow body is made into a plasma atmosphere, and a negative voltage is applied to the ground potential to bring the hollow body into a negative potential state. It comprises means for injecting ions into the inner surface of the hollow body.
【０００６】[0006]
【発明の実施の形態】以下、図面に記載の発明の実施の
形態に基づいて、この発明をより具体的に説明する。こ
こで、図１はイオン注入装置の概略図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described more specifically based on embodiments of the invention shown in the drawings. Here, FIG. 1 is a schematic view of the ion implantation apparatus.
【０００７】図において、イオン注入装置１は、導電性
の中空体２の内部表面２ａにイオンを垂直に注入させる
装置で、真空状態となる密閉容器３、密閉容器３の内部
に先端側が挿入されたプラズマ発生器４、密閉容器３の
内部の空気を排出して真空状態にする真空ポンプ５、及
び接地電位に対してマイナスの電圧をかけて中空体２を
マイナスの電位状態にパルス高電圧電源６などから構成
されている。In FIG. 1, an ion implanter 1 is a device for vertically injecting ions into an inner surface 2a of a conductive hollow body 2, and a vacuum vessel is provided for the closed vessel 3, and the distal end is inserted into the closed vessel 3. Plasma generator 4, a vacuum pump 5 for exhausting the air inside the closed vessel 3 to make a vacuum state, and a pulse high voltage power supply for applying a negative voltage to the ground potential to bring the hollow body 2 to a negative potential state 6 and the like.
【０００８】密閉容器３は、内部の空気を排出して真空
状態にして、内部でプラズマが発生する環境を造り出す
場所であり、密閉容器３の内部には、イオンがその内部
表面２ａに注入される導電性の中空体２が配置され、又
プラズマ発生器４の先端側が挿入されている。更に、密
閉容器３には内部の空気を排出して真空状態にするため
の空気排出路３ａが接続されており、この空気排出路３
ａの他端側には真空ポンプ５が接続されている。The closed vessel 3 is a place where the inside air is exhausted to make a vacuum state to create an environment in which plasma is generated inside. Inside the closed vessel 3, ions are injected into its internal surface 2a. A conductive hollow body 2 is disposed, and the distal end side of the plasma generator 4 is inserted. Further, an air discharge passage 3a for discharging the internal air to a vacuum state is connected to the closed container 3, and the air discharge passage 3a is connected to the air discharge passage 3a.
A vacuum pump 5 is connected to the other end of the line a.
【０００９】プラズマ発生器４は、例えばマイクロ波Ｅ
ＣＲ（電子サイクロトン共鳴）放電によりプラズマを発
生させる機構になっている。マイクロ波ＥＣＲ放電に
は、パルス駆動可能な発振周波数例えば２．４５ＧＨ
ｚ、最大出力例えば３ｋｗのマイクロ波電源が使用され
る。また、プラズマ発生用原料ガスとしては例えば窒素
（Ｎ2 ）ガスが使用される。The plasma generator 4 is, for example, a microwave E
It has a mechanism for generating plasma by CR (Electron Cycloton Resonance) discharge. For microwave ECR discharge, an oscillation frequency capable of driving a pulse, for example, 2.45 GHz
A microwave power source of z, maximum output, for example, 3 kW is used. For example, nitrogen (N 2 ) gas is used as the source gas for plasma generation.
【００１０】パルス高電圧電源６は、例えば、電圧−２
０ｋＶ、周波数１００Ｈｚ、パルスオン時間４０μｓの
パルス電圧を導電性の中空体２に印加するものであり、
通常の電圧に比べて、少ない電気エネルギーで大きな電
圧を得ることができる。The high-voltage pulse power supply 6 has, for example, a voltage of -2.
A pulse voltage of 0 kV, a frequency of 100 Hz, and a pulse on time of 40 μs is applied to the conductive hollow body 2.
Compared with a normal voltage, a large voltage can be obtained with less electric energy.
【００１１】導電性の中空体２は両端の少なくとも一方
が開口されている。中空体２には例えば細長な導電性の
筒体などが使用され、中空体２はその一端側が絶縁筒体
７を介してプラズマ発生器４に間接的に取付けられてい
る。即ち、中空体２の一端側はプラズマ発生器４と非接
触状態にあり、中空体２の一端とプラズマ発生器４とは
放電しない距離だけ絶縁筒体７によって離されている。[0011] At least one of both ends of the conductive hollow body 2 is open. The hollow body 2 is, for example, an elongated conductive cylinder, and one end of the hollow body 2 is indirectly attached to the plasma generator 4 via an insulating cylinder 7. That is, one end of the hollow body 2 is not in contact with the plasma generator 4, and the one end of the hollow body 2 and the plasma generator 4 are separated by the insulating cylinder 7 by a distance that does not discharge.
【００１２】絶縁筒体７はプラズマ発生器４で発生した
プラズマの全てを中空体２の内部に導入させる機能を果
たすもので、絶縁筒体７の両端は開口されている。絶縁
筒体７の開口された一端には、プラズマ発生器４の先端
が一部挿入されて接続されている。また、プラズマ発生
器４の先端が挿入される側の反対側となる絶縁筒体７の
開口された他端には、中空体２の一端側が一部挿入され
て接続されている。The insulating cylinder 7 serves to introduce all of the plasma generated by the plasma generator 4 into the hollow body 2, and both ends of the insulating cylinder 7 are open. One end of the plasma generator 4 is inserted and connected to one open end of the insulating cylinder 7. In addition, one end of the hollow body 2 is partially inserted and connected to the open other end of the insulating cylinder 7 opposite to the side where the tip of the plasma generator 4 is inserted.
【００１３】次に、上記発明の実施の形態の構成に基づ
くイオンの注入方法について以下説明する。密閉容器３
に導電性の中空体２を入れ、中空体２の一端を絶縁筒体
７の一端に挿入して接続する。中空体２の一端が接続さ
れた絶縁筒体７の他端にプラズマ発生器４の先端側を挿
入して接続する。この場合、中空体２の一端とプラズマ
発生器４の先端側とは、非接触状態でしかも放電しない
距離に離してそれぞれ絶縁筒体７の両端側に接続する。Next, a method of implanting ions based on the configuration of the embodiment of the present invention will be described below. Closed container 3
Is inserted into one end of the hollow cylinder 2 and connected to one end of the insulating cylinder 7. The distal end side of the plasma generator 4 is inserted and connected to the other end of the insulating cylinder 7 to which one end of the hollow body 2 is connected. In this case, one end of the hollow body 2 and the front end side of the plasma generator 4 are connected to both ends of the insulating cylinder 7 at a distance in a non-contact state and at the time of not discharging.
【００１４】その後、真空ポンプ５を作動して、密閉容
器３の空気を排出する。密閉容器３の内部の空気は真空
ポンプ５の作動により空気排出路３ａから排出されて内
部は真空状態になる。真空状態としては例えば１０-2パ
スカルの真空度である。Thereafter, the vacuum pump 5 is operated to discharge the air in the closed container 3. The air inside the sealed container 3 is discharged from the air discharge passage 3a by the operation of the vacuum pump 5, and the inside is brought into a vacuum state. The vacuum state is, for example, a degree of vacuum of 10 −2 Pascal.
【００１５】密閉容器３を真空状態にした後、プラズマ
発生器４に所定のガス、例えば窒素ガスを導入して、プ
ラズマ発生器４を作動させると、窒素プラズマが発生す
る。発生した窒素プラズマはプラズマ発生器４の先端か
ら絶縁筒体７の内部を通って中空体２の内部に入り、中
空体２の内部は窒素プラズマ雰囲気になる。After the closed vessel 3 is evacuated and a predetermined gas, for example, nitrogen gas is introduced into the plasma generator 4 and the plasma generator 4 is operated, nitrogen plasma is generated. The generated nitrogen plasma enters the inside of the hollow body 2 from the tip of the plasma generator 4 through the inside of the insulating cylinder 7, and the inside of the hollow body 2 becomes a nitrogen plasma atmosphere.
【００１６】そして、導電性の中空体２の内部が窒素プ
ラズマ雰囲気になった後、パルス高電圧電源６により、
接地電位に対してマイナスの電圧をかけて中空体２をマ
イナスの電位状態にする。After the inside of the conductive hollow body 2 is brought into a nitrogen plasma atmosphere, a pulse high voltage power supply 6
A negative voltage is applied to the ground potential to bring the hollow body 2 into a negative potential state.
【００１７】中空体２がマイナスの電位状態になると、
中空体２の内部の窒素プラズマ雰囲気からプラスの電位
状態のイオンは、マイナスの電位状態の中空体２の内部
表面２ａに吸引加速され、運動エネルギーを持ち中空体
２の内部表面２ａに衝突して、内部表面２ａに垂直にイ
オンが注入される（図２（Ａ）（Ｂ）参照）。When the hollow body 2 is in a negative potential state,
The ions in the positive potential state from the nitrogen plasma atmosphere inside the hollow body 2 are attracted and accelerated by the inner surface 2a of the hollow body 2 in the negative potential state, have kinetic energy, and collide with the inner surface 2a of the hollow body 2. Then, ions are implanted vertically into the inner surface 2a (see FIGS. 2A and 2B).
【００１８】パルス高電圧電源６により導電性の中空体
２にパルス電圧が印加されている間は、イオンが中空体
２の内部表面２ａに吸引加速され、一方、電子は中空体
２から遠ざかり密閉容器３の内壁面に衝突する。このた
め、シースエッジは時間とともに拡がっていき、中性プ
ラズマ部は空間電荷槽（シース）へのイオンの供給源と
なる。While a pulse voltage is applied to the conductive hollow body 2 by the pulse high-voltage power supply 6, ions are attracted and accelerated to the inner surface 2a of the hollow body 2, while electrons move away from the hollow body 2 and are sealed. It collides with the inner wall surface of the container 3. For this reason, the sheath edge expands with time, and the neutral plasma portion becomes a supply source of ions to the space charge tank (sheath).
【００１９】中空体２の内部表面２ａにイオンが垂直に
注入されることにより、中空体２の内部表面２ａの表層
改質を図ることができる。By implanting ions vertically into the inner surface 2a of the hollow body 2, the surface layer of the inner surface 2a of the hollow body 2 can be modified.
【００２０】[0020]
〔実験条件〕実験は、図３（Ｘ）に示すように、長さが
１６０mm、内径35mmφのステンレスチューブからなる中
空体２を使用した。このときパルス高電圧電源６は、マ
イナス２０ｋＶ、１００Ｈｚ、４０μｓ、３０ｍｉｎで
ある。[Experiment Conditions] In the experiment, as shown in FIG. 3 (X), a hollow body 2 made of a stainless steel tube having a length of 160 mm and an inner diameter of 35 mmφ was used. At this time, the voltage of the pulse high-voltage power supply 6 is −20 kV, 100 Hz, 40 μs, and 30 minutes.
【００２１】〔実験結果〕図３（Ｙ）より、中空体２
は、絶縁筒体７寄りのプラズマ発生器４に一番近いほど
（Ａ点）、注入された窒素濃度は高くなる傾向にある
が、中空体２の内部すべてにイオンが注入されているこ
とがわかる。[Experimental results] As shown in FIG.
The concentration of the injected nitrogen tends to increase as the point is closer to the plasma generator 4 closer to the insulating cylinder 7 (point A). Understand.
【００２２】なお、この発明は上記発明の実施の形態に
限定されるものではなく、この発明の精神を逸脱しない
範囲で種々の改変をなし得ることは勿論である。It should be noted that the present invention is not limited to the above embodiment of the present invention, and it is needless to say that various modifications can be made without departing from the spirit of the present invention.
【００２３】[0023]
【発明の効果】以上の記載より明らかなように、この発
明に係る導電性中空体の内部表面へのイオン注入法によ
れば、プラズマ発生器の先端側に、絶縁筒体を介して非
接触状態でしかも放電しない距離に離して、導電性の中
空体の一端側を取り付け、プラズマ発生器で発生したプ
ラズマを中空体の内部に導入し、導電性の中空体の内部
をプラズマ雰囲気にし、接地電位に対してマイナスの電
圧をかけて中空体をマイナスの電位状態にし、プラズマ
雰囲気のイオンを中空体の内部表面に注入させることに
より、これまで注入が困難であった中空体の内部表面に
プラズマ雰囲気のイオンを垂直に注入させることがで
き、これを利用して中空体の内部表面の表層改質を図る
ことができる。As is apparent from the above description, according to the ion implantation method to the inner surface of the conductive hollow body according to the present invention, the non-conductive portion is placed on the tip side of the plasma generator via the insulating cylinder.
Keep in a conductive state, away from
Attach one end of the air body, and
The plasma is introduced into the hollow body, the inside of the conductive hollow body is made into a plasma atmosphere, and a negative voltage is applied to the ground potential to bring the hollow body into a negative potential state. By injecting ions into the inner surface, ions in the plasma atmosphere can be vertically injected into the inner surface of the hollow body, which has been difficult to implant until now, and this is used to modify the surface layer of the inner surface of the hollow body. Can be planned.
【図１】この発明の実施の形態を示すイオン注入装置の
概略図である。FIG. 1 is a schematic diagram of an ion implantation apparatus showing an embodiment of the present invention.
【図２】（Ａ）はこの発明の実施の形態を示す中空体の
内部表面にイオンが注入される概念を示す断面図であ
る。（Ｂ）はこの発明の実施の形態を示す中空体の内部
表面にイオンが注入される概念を示す側断面図である。FIG. 2A is a cross-sectional view showing a concept of implanting ions into an inner surface of a hollow body according to an embodiment of the present invention. (B) is a side sectional view showing the concept of implanting ions into the inner surface of the hollow body according to the embodiment of the present invention.
【図３】（Ｘ）は実験したステンレスチューブ（中空
体）の寸法サイズ、高電圧パルスの条件を示す実験概要
図である。（Ｙ）は図３（Ｘ）のステンレスチューブ
（中空体）の寸法サイズによる内部表面の所定位置
（Ａ，Ｂ，Ｃ）における、オージェ電子分析により測定
したチューブ内表面（中空体の内部表面）に注入された
窒素の濃度分布図である。FIG. 3 (X) is a schematic view of an experiment showing the dimensions of a stainless steel tube (hollow body) tested and conditions of a high voltage pulse. (Y) is the inner surface of the tube (inner surface of the hollow body) measured by Auger electron analysis at a predetermined position (A, B, C) of the inner surface according to the size and size of the stainless steel tube (hollow body) of FIG. FIG. 4 is a distribution diagram of the concentration of nitrogen injected into the substrate.
【図４】従来説明図である。FIG. 4 is a conventional explanatory diagram.
１ イオン注入装置 ２ 中空体 ２ａ 内部表面 ３ 密閉容器 ３ａ 空気排出路 ４ プラズマ発生器 ５ 真空ポンプ ６ パルス高電圧電源 ７ 絶縁筒体 DESCRIPTION OF SYMBOLS 1 Ion implantation apparatus 2 Hollow body 2a Internal surface 3 Airtight container 3a Air discharge path 4 Plasma generator 5 Vacuum pump 6 Pulse high voltage power supply 7 Insulating cylinder
フロントページの続き (56)参考文献 特開 平５−128994（ＪＰ，Ａ) 特開 平６−251742（ＪＰ，Ａ) Ｍｎ ＳＵＮ，ｅｔ．ａｌ，Ｎｅｗ ｍｅｔｈｏｄ ｏｆ ｔｕｂｕｌａｒ ｍａｔｅｒｉａｌ ｉｎｎｅｒ ｓｕｒ ｆａｃｅ ｍｏｄｉｆｉｃａｔｉｏｎ ｂｙ ｐｌａｓｍａ ｓｏｕｃｅ ｉｏ ｎ ｉｍｐｌａｎｔａｔｉｏｎ，Ｊ．Ｖ ａｃ．Ｓｃｉ．Ｔｅｃｈｎｏｌ．Ａ，ｖ ｏｌ．14，ｎｏ．２，ｐ．367−369 (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 14/48 H05H 1/46 ＪＩＣＳＴファイル（ＪＯＩＳ)Continuation of the front page (56) References JP-A-5-128994 (JP, A) JP-A-6-251742 (JP, A) Mn SUN, et. al, New method of tubular material inner surface modification by plasma source ion implantation, J. Phys. V ac. Sci. Technol. A, vol. 14, no. 2, p. 367-369 (58) Field surveyed (Int. Cl. 7 , DB name) C23C 14/48 H05H 1/46 JICST file (JOIS)
Claims (1)
介して非接触状態でしかも放電しない距離に離して、導
電性の中空体の一端側を取り付け、プラズマ発生器で発
生したプラズマを中空体の内部に導入し、導電性の中空
体の内部をプラズマ雰囲気にし、接地電位に対してマイ
ナスの電圧をかけて中空体をマイナスの電位状態にし
て、プラズマ雰囲気のイオンを中空体の内部表面に注入
させることを特徴とする導電性中空体の内部表面へのイ
オン注入法。1. An insulating cylinder is provided on the tip side of a plasma generator.
Through a non-contact and non-discharging distance
Attach one end of an electrically conductive hollow body and start it with a plasma generator.
The generated plasma is introduced into the hollow body, the inside of the conductive hollow body is set to a plasma atmosphere, a negative voltage is applied to the ground potential to make the hollow body a negative potential state, and ions in the plasma atmosphere are removed. An ion implantation method into an inner surface of a conductive hollow body, wherein the ion implantation is performed on the inner surface of the hollow body.
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| JP22088697A JP3333717B2 (en) | 1997-07-31 | 1997-07-31 | Ion implantation method to the inner surface of conductive hollow body |
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| JP22088697A JP3333717B2 (en) | 1997-07-31 | 1997-07-31 | Ion implantation method to the inner surface of conductive hollow body |
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| JP3333717B2 true JP3333717B2 (en) | 2002-10-15 |
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Non-Patent Citations (1)
| Title |
|---|
| Ｍｎ ＳＵＮ，ｅｔ．ａｌ，Ｎｅｗ ｍｅｔｈｏｄ ｏｆ ｔｕｂｕｌａｒ ｍａｔｅｒｉａｌ ｉｎｎｅｒ ｓｕｒｆａｃｅ ｍｏｄｉｆｉｃａｔｉｏｎ ｂｙ ｐｌａｓｍａ ｓｏｕｃｅ ｉｏｎ ｉｍｐｌａｎｔａｔｉｏｎ，Ｊ．Ｖａｃ．Ｓｃｉ．Ｔｅｃｈｎｏｌ．Ａ，ｖｏｌ．１４，ｎｏ．２，ｐ．３６７−３６９ |
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