JP3335599B2 - Heat shielding film - Google Patents
Heat shielding filmInfo
- Publication number
- JP3335599B2 JP3335599B2 JP24643299A JP24643299A JP3335599B2 JP 3335599 B2 JP3335599 B2 JP 3335599B2 JP 24643299 A JP24643299 A JP 24643299A JP 24643299 A JP24643299 A JP 24643299A JP 3335599 B2 JP3335599 B2 JP 3335599B2
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- JP
- Japan
- Prior art keywords
- film
- zno
- oxide film
- heat ray
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【0001】[0001]
【産業上の利用分野】本発明は耐湿性の優れた熱線遮断
膜に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat ray shielding film having excellent moisture resistance.
【0002】[0002]
【従来の技術】基体表面に酸化物膜、Ag膜、酸化物膜
を順に積層した3層からなる膜、または酸化物膜,Ag
膜、酸化物膜、Ag膜、酸化物膜を順次積層した5層か
らなる膜等の(2n+1)層(n≧1)からなる膜は、
Low−E(Low−Emissivity)膜と呼ば
れる熱線遮断膜であり、かかるLow−E膜を形成した
ガラスは、Low−Eガラスと呼ばれている。2. Description of the Related Art An oxide film, an Ag film, a three-layer film in which an oxide film is sequentially laminated on a substrate surface, or an oxide film, Ag
A film composed of (2n + 1) layers (n ≧ 1), such as a film composed of five layers in which a film, an oxide film, an Ag film, and an oxide film are sequentially laminated,
This is a heat ray blocking film called a Low-E (Low-Emissivity) film, and the glass on which the Low-E film is formed is called a Low-E glass.
【0003】Low−Eガラスは、室内からの熱線を反
射することにより室内の温度低下を防止できる機能ガラ
スであり、暖房負荷を軽減する目的でおもに寒冷地で用
いられている。また、太陽熱の熱線遮断効果も有するた
め、自動車の窓ガラスにも採用されている。透明であり
かつ導電性を示すため、電磁遮蔽ガラスとしての用途も
ある。導電性プリント等からなるバスバー等の通電加熱
手段を設ければ、通電加熱ガラスとして用いることがで
きる。[0003] Low-E glass is a functional glass that can prevent a temperature drop in a room by reflecting heat rays from the room, and is mainly used in cold regions for the purpose of reducing a heating load. It also has the effect of blocking solar heat, so that it is also used in automotive window glass. Since it is transparent and shows conductivity, it is also used as an electromagnetic shielding glass. If an electric heating means such as a bus bar made of a conductive print or the like is provided, it can be used as an electrically heated glass.
【0004】おもなLow−Eガラスとしては、ZnO
/Ag/ZnO/ガラスという膜構成を有するものが挙
げられる。しかし、このような膜では、耐擦傷性、化学
的安定性などの耐久性に欠けるため、単板で使うことが
できず、合わせガラスまたは複層ガラスにする必要があ
った。特に耐湿性に問題があり、空気中の湿度や合わせ
ガラスとする場合の中間膜に含まれる水分により、白色
斑点や白濁を生じる。このようなことから、単板での保
管やハンドリングに注意を要していた。[0004] The main Low-E glass is ZnO.
/ Ag / ZnO / glass. However, such a film lacks durability such as abrasion resistance and chemical stability, so that it cannot be used as a single plate and needs to be laminated glass or double glazing. In particular, there is a problem in moisture resistance, and white spots and white turbidity are generated due to humidity in the air and moisture contained in an interlayer film when laminated glass is used. For this reason, care has to be taken in storage and handling of veneers.
【0005】[0005]
【発明が解決しようとする課題】本発明の目的は、従来
技術が有していた上記の欠点を解決し、耐湿性の優れた
熱線遮断膜を提供することである。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned drawbacks of the prior art and to provide a heat ray shielding film having excellent moisture resistance.
【0006】[0006]
【課題を解決するための手段】本発明は、基体上に酸化
物膜、金属膜、酸化物膜、と交互に積層された(2n+
1)層(n≧1)からなる熱線遮断膜において、基体か
ら見て、基体から最も離れたAgを主成分とする金属膜
(A)の上に形成された酸化物膜(B)はSnの含量が
Znとの総量に対し1〜4原子%である酸化亜鉛膜を少
なくとも1層含む熱線遮断膜を提供する。酸化物膜
(B)は、基体から見て、基体から最も離れた金属膜
(A)の上(金属膜(A)の基体側とは反対側)に形成
された膜であり、Snの含量がZnとの総量に対し1〜
4原子%である(SnをZnとの総量に対し1〜4原子
%ドープした)ZnO膜を少なくとも1層含む膜であ
る。According to the present invention, an oxide film, a metal film, and an oxide film are alternately laminated on a substrate (2n +
1) In the heat ray blocking film composed of layers (n ≧ 1), when viewed from the substrate, the oxide film (B) formed on the metal film (A) mainly composed of Ag which is farthest from the substrate is Sn. The present invention provides a heat ray shielding film including at least one zinc oxide film having a content of 1 to 4 atomic% with respect to the total amount of Zn. The oxide film (B) is a film formed on the metal film (A) farthest from the substrate when viewed from the substrate (the side opposite to the substrate side of the metal film (A)), and has a Sn content. Is 1 to the total amount with Zn
This is a film including at least one ZnO film of 4 atomic% (Sn is doped with 1 to 4 atomic% with respect to the total amount of Zn).
【0007】以下に本発明における酸化物膜(B)につ
いて説明する。上述のように、従来のLow−Eガラス
(膜構成:ZnO/Ag/ZnO/ガラス)の場合、単
板で室内放置すると、空気中の湿気により白色斑点や白
濁を生じる。白色斑点や白濁の存在する膜を走査型電子
顕微鏡(SEM)で観察することにより、膜の表面にひ
びわれやしわの存在、および膜の剥離の存在が確認され
た。Hereinafter, the oxide film (B) according to the present invention will be described. As described above, in the case of the conventional Low-E glass (film composition: ZnO / Ag / ZnO / glass), when left in a single plate indoors, white spots and white turbidity occur due to moisture in the air. By observing the film having white spots and opacity with a scanning electron microscope (SEM), the presence of cracks and wrinkles on the surface of the film and the presence of peeling of the film were confirmed.
【0008】この膜の剥離部について、AgおよびZn
の各元素について元素分析を行ったところ、Agは剥離
の有無にかかわらずほぼ一定量存在するのに対して、Z
nは剥離部で検出量がほぼ半分になっていた。つまり、
剥離は最上層のZnO層とAg層の界面で起きているこ
とがわかった。[0008] Regarding the peeled portion of this film, Ag and Zn
Elemental analysis was performed for each of the elements. Ag was present in a substantially constant amount regardless of the presence or absence of peeling.
In the case of n, the detection amount was almost halved at the peeled portion. That is,
It was found that the peeling occurred at the interface between the uppermost ZnO layer and the Ag layer.
【0009】次に、耐湿試験(50℃、相対湿度95%
雰囲気中、6日間放置)前後の試料をCuKα線を用い
たX線回折法で調べた。六方晶ZnOの(002)回折
線、立方晶Agの(111)回折線について、回折角2
θ(ピークの重心位置)、結晶面間隔d、積分幅IWを
それぞれ表1に示す。Next, a moisture resistance test (50 ° C., 95% relative humidity)
Samples before and after standing in an atmosphere for 6 days) were examined by X-ray diffraction using CuKα radiation. For the (002) diffraction line of hexagonal ZnO and the (111) diffraction line of cubic Ag, the diffraction angle is 2
Table 1 shows θ (the center of gravity of the peak), the crystal plane distance d, and the integral width IW.
【0010】X線回折法におけるピークのずれの程度に
より内部応力による格子歪の程度を検出できる。ZnO
(b)/Ag/ZnO(a)/ガラスという試料の場
合、最上層のZnO(b)によるピークが、ZnO
(a)によるピークの5〜15倍の強さで検出されるた
め、試料全体におけるX線回折法のZnOのピークは、
若干ZnO(a)による影響があるかもしれないが、ほ
とんど最上層の六方晶ZnO(b)によるピークと考え
てよい。The degree of lattice distortion due to internal stress can be detected from the degree of peak shift in the X-ray diffraction method. ZnO
In the case of the sample of (b) / Ag / ZnO (a) / glass, the peak of ZnO (b) in the uppermost layer is ZnO (b).
Since the peak is detected at 5 to 15 times the intensity of the peak according to (a), the peak of ZnO in the whole sample by the X-ray diffraction method is as follows:
Although there may be some influence by ZnO (a), it can be considered that the peak is almost due to hexagonal ZnO (b) in the uppermost layer.
【0011】[0011]
【表1】 [Table 1]
【0012】表1によれば、耐湿試験前のLow−E膜
のZnOの(002)回折線は、ZnO粉末の2θ=3
4.44°と比較するとかなり位置がずれている。これ
は、結晶歪の存在を示唆している。この結晶歪は、膜の
内部応力によるものと考えられる。耐湿試験前サンプル
では、結晶面間隔d=2.650Åとなっており、Zn
O粉末のd=2.602Åと比較すると1.8%大き
い。このことから、結晶がかなり大きな圧縮応力を受け
ていることがわかる。耐湿試験後のサンプルでは、d=
2.641Åとなっており、やや結晶歪が小さくなって
いる。これは、最上層の六方晶ZnOの内部応力が、ひ
び、しわ、剥離により一部緩和されたことと対応してい
る。According to Table 1, the (002) diffraction line of ZnO of the Low-E film before the humidity resistance test was 2θ = 3 of ZnO powder.
The position is considerably shifted as compared with 4.44 ° . This suggests the presence of crystal strain. This crystal strain is considered to be due to the internal stress of the film. In the sample before the moisture resistance test, the crystal plane distance d = 2.650 °, and Zn
It is 1.8% larger than d = 2.602 ° of the O powder. This indicates that the crystal has received a fairly large compressive stress. In the sample after the moisture resistance test, d =
2.641 °, and the crystal strain is slightly reduced. This corresponds to the fact that the internal stress of the hexagonal ZnO in the uppermost layer was partially relaxed by cracks, wrinkles, and peeling.
【0013】Agの(111)回折線に関しては、耐湿
試験後の積分幅IWが小さくなっていることから、耐湿
試験を施すことにより、Agが粒成長すると考えられ
る。Regarding the (111) diffraction line of Ag, since the integration width IW after the moisture resistance test is small, it is considered that the Ag undergoes grain growth by performing the moisture resistance test.
【0014】つまり、白濁発生のメカニズムは、最上層
のZnO膜が内部応力に耐えきれず、Ag膜との界面か
ら剥離、破損し、次に銀の劣化、即ち粒径が増大し、か
かる破損した表面および大きな銀粒子により光が散乱さ
れて白濁して見えるものと考えられる。表1の例では、
内部応力は圧縮応力であるが、内部応力には圧縮応力と
引張応力の2種類があり、いずれも膜破損の原因とな
る。That is, the mechanism of white turbidity is that the uppermost ZnO film cannot withstand the internal stress, and peels and breaks from the interface with the Ag film, and then the silver deteriorates, that is, the grain size increases, and this breakage occurs. It is considered that the light is scattered by the scratched surface and the large silver particles, and appears turbid. In the example of Table 1,
The internal stress is a compressive stress, and there are two types of internal stress, a compressive stress and a tensile stress, both of which cause film breakage.
【0015】以上のことから、湿気による白濁を抑える
ためには、最上層ZnO膜の内部応力低減が有効である
ことがわかる。From the above, it can be seen that it is effective to reduce the internal stress of the uppermost ZnO film in order to suppress the clouding due to moisture.
【0016】本発明では、ZnOにSnをドープするこ
とにより、内部応力を低減でき、熱線遮断膜の耐湿性が
改善できることを見出した。In the present invention, it has been found that by doping Zn into ZnO, the internal stress can be reduced and the moisture resistance of the heat ray blocking film can be improved.
【0017】酸化物膜(B)1層(450Å)の内部応
力、および、ガラス/ZnO(450Å)/Ag(10
0Å)の上に同様の酸化物膜(B)(450Å)をスパ
ッタリング法により形成した熱線遮断膜の六方晶ZnO
の(002)回折線の回折角2θ(重心位置)と、かか
る熱線遮断膜の耐湿性の関係を表2に示す。The internal stress of one layer (450 °) of the oxide film (B) and the glass / ZnO (450 °) / Ag (10
0 °) on the same oxide film (B) (450 °) as a heat ray blocking film formed by sputtering.
Table 2 shows the relationship between the diffraction angle 2θ (center of gravity position) of the (002) diffraction line and the moisture resistance of the heat ray blocking film.
【0018】[0018]
【表2】 [Table 2]
【0019】耐湿性は、50℃、相対湿度95%の雰囲
気中に6日間放置するという試験を行い、評価した。評
価基準は、膜の端部付近に白濁がなく、直径1mm以上
の白色斑点が現れなければ○、膜の端部付近に白濁が現
れたもの、または直径1mm以上の白色斑点が現れたも
のを△、膜の全面に白濁が生じたものを×とした。S
n、Ca、Baのドープ量は、すべて、Znとの総量に
対して原子比で4%である。The moisture resistance was evaluated by performing a test in which it was left in an atmosphere at 50 ° C. and a relative humidity of 95% for 6 days. The evaluation criteria were as follows: if there was no white turbidity near the edge of the film and no white spots with a diameter of 1 mm or more appeared, those where white turbidity appeared near the edge of the film or those where white spots with a diameter of 1 mm or more appeared Δ, when the cloudiness occurred on the entire surface of the film was evaluated as x. S
The doping amounts of n , Ca, and Ba are all 4% in atomic ratio with respect to the total amount with Zn.
【0020】表2によれば、SnをZnO膜にドープし
た場合、ZnO膜の内部応力が低くなる。これらの各種
元素をドープしたZnO膜を使用した熱線遮断膜の耐湿
性が改善される。この場合、ノンドープのものと比較す
ると、ZnOの(002)回折線の回折角2θ(重心位
置)が高角度側にシフトする。これは、結晶歪が、ノン
ドープのものより小さいことを示唆しており、膜の内部
応力が小さいことの裏付けとなっている。According to Table 2, when Sn is doped into the ZnO film, the internal stress of the ZnO film is reduced. The moisture resistance of the heat ray blocking film using the ZnO film doped with these various elements is improved. In this case, the diffraction angle 2θ (center of gravity) of the (002) diffraction line of ZnO shifts to a higher angle side as compared with the non-doped one. This suggests that the crystal strain is smaller than that of the non-doped one, and supports that the internal stress of the film is small.
【0021】図1に本発明の熱線遮断膜の代表例の断面
図を示す。図1(a)は、3層からなる熱線遮断膜の断
面図、図1(b)は、(2n+1)層(n≧1)からな
る熱線遮断膜の断面図である。1は基体、2は酸化物
膜、3は金属膜、4はSnをドープしたZnO膜を少な
くとも1層含む酸化物膜(B)である。FIG. 1 is a sectional view of a typical example of the heat ray blocking film of the present invention. FIG. 1A is a cross-sectional view of a heat ray blocking film composed of three layers, and FIG. 1B is a cross-sectional view of a heat ray shielding film composed of (2n + 1) layers (n ≧ 1). Reference numeral 1 denotes a substrate, 2 denotes an oxide film, 3 denotes a metal film, and 4 denotes an oxide film (B) including at least one Sn- doped ZnO film.
【0022】本発明における基体1としては、ガラス板
の他、プラスチック等のフィルムや板も使用できる。As the substrate 1 in the present invention, besides a glass plate, a film or plate of plastic or the like can be used.
【0023】酸化物膜(B)は、SnをドープしたZn
O膜を少なくとも1層含む。Snのドープ量は、1原子
%未満では、内部応力があまり低減せず、耐湿性改善に
至らず、10原子%を超えても内部応力低減効果はそれ
ほど大きくは変らない。また、添加量が多くなると、湿
気によりヘイズが出やすくなり、かえって耐湿性が悪く
なる。さらに、添加量が多くなるほど成膜速度が遅くな
り、生産性が悪くなる。以上のことを考慮すると最適な
ドープ量は、Znとの総量に対して、1〜4原子%であ
る。特に2原子%以上であることが好ましい。The oxide film (B) is made of Zn doped with Sn.
Contains at least one O film. If the doping amount of Sn is less than 1 atomic%, the internal stress does not decrease much, and the moisture resistance is not improved. Even if it exceeds 10 atomic%, the effect of reducing the internal stress does not change so much. Further, when the amount of addition is large, haze is likely to be generated due to moisture, and on the contrary, moisture resistance is deteriorated. Furthermore, as the amount of addition increases, the film formation rate decreases, and the productivity deteriorates. In consideration of the above, the optimal doping amount is 1 to 4 atomic% with respect to the total amount of Zn . Is preferably 2 atomic% or more, especially.
【0024】酸化物膜(B)を構成するZnO膜に関し
ては、上述のように、六方晶ZnOの内部応力と、Cu
Kα線を用いたX線回折による回折角2θ(重心位置)
とがほぼ対応している。ZnOを主成分とする膜の結晶
系は六方晶である。本発明の熱線遮断膜の耐湿性向上の
ためには、熱線遮断膜のCuKα線を用いたX線回折に
おいて、六方晶ZnOの(002)回折線の回折角2θ
(重心位置)が33.88°から35.00°までの間
の値、特に、34.00°から34.88°までの値で
あることが好ましい。回折角2θが34.44°以下の
値は圧縮応力を、34。44°以上の値は引張応力を、
示す。Regarding the ZnO film constituting the oxide film (B), as described above, the internal stress of hexagonal ZnO and the CuO
Diffraction angle 2θ by X-ray diffraction using Kα ray (center of gravity)
And almost correspond. The crystal system of the film mainly composed of ZnO is hexagonal. In order to improve the moisture resistance of the heat ray-shielding film of the present invention, the diffraction angle 2θ of the (002) diffraction line of hexagonal ZnO in X-ray diffraction using CuKα ray of the heat ray-shielding film.
It is preferable that the (center of gravity position) is a value between 33.88 ° and 35.00 °, particularly a value between 34.00 ° and 34.88 °. When the diffraction angle 2θ is 34.44 ° or less, the compressive stress is applied. When the diffraction angle 2θ is 34.44 ° or more, the tensile stress is applied.
Show.
【0025】酸化物膜(B)の膜厚は、特に限定されな
いが、熱線遮断膜全体の色調、可視光透過率を考慮する
と、200〜700Åが望ましい。酸化物膜(B)は、
多層でもよい。例えば、本発明の熱線遮断膜を内側にし
てプラスチック中間膜を介してもう1枚の基体と積層し
て合わせガラスとする場合に、かかるプラスチック中間
膜との接着力の調整、または、耐久性向上の目的で中間
膜と接する層(基体から最も離れた層)として、100
Å以下の酸化物膜(例えば、酸化クロム膜)、他の元素
をドープした酸化物からなる膜、複合酸化物膜などを形
成する場合があるが、このような膜を含めて2層以上の
構成とすることもできる。The thickness of the oxide film (B) is not particularly limited, but is preferably 200 to 700 ° in consideration of the color tone and the visible light transmittance of the entire heat ray blocking film. The oxide film (B)
It may be a multilayer. For example, in the case where the heat ray blocking film of the present invention is placed inside and another substrate is laminated via a plastic intermediate film to form a laminated glass, the adhesion to the plastic intermediate film is adjusted or the durability is improved. Layer (the layer farthest from the substrate) in contact with the intermediate film for the purpose of
酸化 物 In some cases, the following oxide film (for example, a chromium oxide film), a film made of an oxide doped with another element, a composite oxide film, or the like is formed. It can also be configured.
【0026】酸化物膜(B)を酸素含有雰囲気中で反応
性スパッタリングにより成膜する場合は、金属膜(A)
の酸化を防ぐために、まず金属膜(A)上に酸素の少な
い雰囲気中で薄い金属膜または酸化不充分な金属酸化物
膜を形成するのが望ましい。この薄い金属膜は、酸化物
膜(B)の成膜中に酸化されて酸化物膜となる。上述の
酸化物膜(B)の好ましい膜厚は、かかる薄い金属膜が
酸化されてできた酸化物膜の膜厚も含んだ膜厚である。
本明細書において、金属膜3上に形成する酸化物膜に関
しても同様である。When the oxide film (B) is formed by reactive sputtering in an oxygen-containing atmosphere, the metal film (A)
In order to prevent oxidation of the metal film, it is desirable to first form a thin metal film or a metal oxide film with insufficient oxidation on the metal film (A) in an atmosphere containing less oxygen. This thin metal film is oxidized during the formation of the oxide film (B) to become an oxide film. The preferable thickness of the oxide film (B) is a thickness including the thickness of the oxide film formed by oxidizing such a thin metal film.
In this specification, the same applies to an oxide film formed on the metal film 3.
【0027】酸化物膜(B)以外の酸化物膜2の材料
は、特に限定されない。ZnO、SnO2 、TiO2 、
これらの2種以上を含む積層膜、これらに他の元素を添
加した膜等が使用できるが、さらに、生産性を考慮する
と、ZnO膜、SnO2 膜、ZnO−SnO2 膜のいず
れか2種の膜を交互に2層以上積層させた膜や、Si、
Ti、Cr、B、Mg、Sn、Gaのうち少なくとも1
種の合量がZnとの総量に対し1〜10原子%であるZ
nO膜が好ましい。The material of the oxide film 2 other than the oxide film (B) is not particularly limited. ZnO, SnO 2 , TiO 2 ,
A laminated film containing two or more of these materials, a film obtained by adding other elements to the film, or the like can be used. Further, considering productivity, any two of a ZnO film, a SnO 2 film, and a ZnO—SnO 2 film are used. Of two or more layers alternately stacked, Si,
At least one of Ti, Cr, B, Mg, Sn, and Ga
Z total amount of seed is from 1 to 10 atomic%, relative to the total amount of the Zn
An nO film is preferred.
【0028】色調、可視光透過率を考慮すると、酸化物
膜2の膜厚は200〜700Åであることが望ましい。
積層膜の場合、合計200〜700Åであればよく、そ
れぞれの層の膜厚は限定されない。In consideration of the color tone and the visible light transmittance, the thickness of the oxide film 2 is desirably 200 to 700 °.
In the case of a laminated film, the total thickness may be 200 to 700 °, and the thickness of each layer is not limited.
【0029】特に、酸化物膜、金属膜、酸化物膜、金属
膜、酸化物膜、という5層構成、あるいは5層以上の膜
構成の熱線遮断膜の場合、最外層の酸化物膜(B)以外
の酸化物膜2はSi、Ti、Cr、B、Mg、Sn、G
aのうち少なくとも1種の合量がZnとの総量に対し1
〜10原子%であるZnO膜を少なくとも1層含む膜で
あることが望ましい。特に6原子%以下であることが好
ましく、また、特に2原子%以上であることが好まし
い。 Particularly, in the case of a heat ray blocking film having a five-layer structure of an oxide film, a metal film, an oxide film, a metal film, and an oxide film, or a film structure of five or more layers, the outermost oxide film (B ) Except for Si, Ti, Cr, B, Mg, Sn, G
a at least one of them is 1 to the total amount with Zn.
It is desirable that the film comprising at least one layer of ZnO film is 10 atomic%. In particular, it is preferably at most 6 atomic%.
It is particularly preferable that the content be 2 atomic% or more.
No.
【0030】本発明における金属膜3としては、Ag
膜、またはAu、Cu、Pdのうちの少なくとも1種を
含むAgを主成分とする膜などの、熱線遮断性能を有す
る膜が使用できる。金属膜3は、かかる熱線遮断性能を
有する金属膜の他に、各種の機能を有する金属層を有し
ていてもよい。例えば、熱線遮断性能を有する金属膜と
酸化物膜(B)や酸化物膜2との間の接着力を調整する
金属層や、熱線遮断性能を有する金属膜からの金属の拡
散防止機能を有する金属層等が挙げられる。これらの機
能を有する金属層を構成する金属の例としては、Zn、
Al、Cr、W、Ni、Tiや、これらのうち2種以上
の金属の合金等が挙げられる。The metal film 3 in the present invention is made of Ag
A film having a heat ray blocking performance such as a film or a film containing Ag as a main component containing at least one of Au, Cu, and Pd can be used. The metal film 3 may have a metal layer having various functions in addition to the metal film having the heat ray blocking performance. For example, it has a metal layer that adjusts the adhesive force between the metal film having the heat ray blocking performance and the oxide film (B) or the oxide film 2, or has a function of preventing metal diffusion from the metal film having the heat ray blocking performance. Examples include a metal layer. Examples of the metal constituting the metal layer having these functions include Zn,
Examples include Al, Cr, W, Ni, Ti, and alloys of two or more of these metals.
【0031】これらの金属層を含む金属膜3全体の膜厚
としては、熱線遮断性能および可視光透過率等とのかね
あいを考慮して、50〜150Å、特に100Å程度が
適当である。The thickness of the entire metal film 3 including these metal layers is suitably 50 to 150 °, particularly about 100 °, in consideration of the balance between the heat ray blocking performance and the visible light transmittance.
【0032】[0032]
【作用】酸化物膜(B)としてSnの含量がZnとの総
量に対し1〜10原子%であるZnO膜を少なくとも1
層含むことにより従来の熱線遮断膜に比べて耐湿性が著
しく改善される。これは、酸化物膜(B)の低内部応力
化により、酸化物膜(B)が破損しにくくなり、湿気に
よる劣化が抑えられるためと考えられる。[Action] oxide film at least a ZnO film containing the amount of Sn as (B) is from 1 to 10 atomic%, relative to the total amount of the Zn
By including the layer, the moisture resistance is remarkably improved as compared with the conventional heat ray shielding film. This is presumably because the oxide film (B) is less likely to be damaged due to the low internal stress of the oxide film (B), and deterioration due to moisture is suppressed.
【0033】[0033]
【実施例】(実施例) 直 流スパッタリング法により、ガラス基板上に、Ar:
O2 =1:9の2.0×10-3Torrの雰囲気中で、
SnをZnとの総量に対して3.0原子%含むZnSn
金属をターゲットとして、SnドープZnO膜を450
Å形成した。The EXAMPLES EXAMPLES dc sputtering on a glass substrate, Ar:
In an atmosphere of 2.0 × 10 −3 Torr with O 2 = 1: 9,
ZnSn containing 3.0 atomic% of Sn with respect to the total amount of Zn
Using a metal as a target, Sn-doped ZnO
Å formed.
【0034】次いで、Arのみの2.0×10-3Tor
rの雰囲気中で、AgをターゲットとしてAg膜を10
0Å形成し、次いで雰囲気を変えずに、SnをZnとの
総量に対して3.0原子%含むZnSn金属をターゲッ
トとして、20Å程度のごく薄いSnドープZn膜を形
成した。最後に、Ar:O2 =1:9の2.0×10-3
Torrの雰囲気中で、SnをZnとの総量に対して
3.0原子%含むZnSn金属をターゲットとして、上
記Ag膜上にSnドープZnO膜を形成した。Next, 2.0 × 10 −3 Torr of only Ar is used.
In an atmosphere of r, an Ag film is
0 ° was formed, and then a very thin Sn-doped Zn film of about 20 ° was formed using a target of ZnSn metal containing 3.0 atomic% of Sn with respect to the total amount of Zn without changing the atmosphere. Finally, 2.0 × 10 −3 of Ar: O 2 = 1: 9
In an atmosphere of Torr, a Sn-doped ZnO film was formed on the Ag film by using a target of ZnSn metal containing 3.0 atomic% of Sn with respect to the total amount of Zn.
【0035】最後のSnドープZnO膜の成膜中に、S
nドープZn膜が酸化雰囲気中で酸化されてSnドープ
ZnO膜となったので、Ag膜上に形成されたSnドー
プZnO膜の総膜厚は450Åであった。成膜中の基板
温度は室温、スパッタ電力密度は、SnドープZnO膜
の成膜時には2.7W/cm2 、Ag膜の成膜時には
0.7W/cm2 であった。なお、SnドープZnO膜
におけるSnとZnの割合は、ターゲットにおける割合
と同じであった。During the formation of the last Sn-doped ZnO film, S
Since the n-doped Zn film was oxidized into an Sn-doped ZnO film in an oxidizing atmosphere, the total thickness of the Sn-doped ZnO film formed on the Ag film was 450 °. The substrate temperature is room temperature, sputtering power density in the film formation, at the time of forming the Sn-doped ZnO film during the film deposition of 2.7 W / cm 2, Ag film was 0.7 W / cm 2. Note that the ratio of Sn and Zn in the Sn-doped ZnO film was the same as the ratio in the target.
【0036】上記熱線遮断膜について、50℃、相対湿
度95%の雰囲気中に6日間放置するという耐湿試験を
行った。耐湿試験後の外観は、ごく微小の斑点は見られ
たものの、目立った白色斑点および白濁は観察されず良
好であった。The heat ray shielding film was subjected to a moisture resistance test in which it was left in an atmosphere at 50 ° C. and a relative humidity of 95% for 6 days. The appearance after the moisture resistance test was good, although very fine spots were observed, but no noticeable white spots and white turbidity were observed.
【0037】(比較例) 直 流スパッタリング法により、ガラス基板上に、Ar:
O2 =1:9の2.0×10-3Torrの雰囲気中で、
Zn金属をターゲットとして、ZnO膜を450Å形成
した。[0037] The Comparative Example dc sputtering on a glass substrate, Ar:
In an atmosphere of 2.0 × 10 −3 Torr with O 2 = 1: 9,
A ZnO film was formed at 450 ° using Zn metal as a target.
【0038】次いで、Arのみの2.0×10-3Tor
rの雰囲気中で、AgをターゲットとしてAg膜を10
0Å形成し、次いで雰囲気を変えずに、Zn金属をター
ゲットとして、20Å程度のごく薄いZn膜を形成し、
最後に、Ar:O2 =1:9の2.0×10-3Torr
の雰囲気中で、Znをターゲットとして、上記Ag膜上
にZnO膜を形成した。Next, 2.0 × 10 −3 Torr of only Ar is used.
In an atmosphere of r, an Ag film is
0 ° and then, without changing the atmosphere, forming a very thin Zn film of about 20 ° using Zn metal as a target,
Finally, 2.0 × 10 −3 Torr of Ar: O 2 = 1: 9
A ZnO film was formed on the Ag film by using Zn as a target in the above atmosphere.
【0039】最後のZnO膜の成膜中に、Zn膜が酸化
雰囲気中で酸化されてZnO膜となったので、Ag膜上
に形成されたZnO膜の総膜厚は450Åであった。成
膜中の基板温度は室温、スパッタ電力密度は、ZnO膜
の成膜時には2.7W/cm2 、Ag膜の成膜時には
0.7W/cm2 であった。During the formation of the last ZnO film, the Zn film was oxidized in an oxidizing atmosphere to become a ZnO film. Therefore, the total thickness of the ZnO film formed on the Ag film was 450 °. The substrate temperature is room temperature, sputtering power density in the film formation, during the film deposition of the ZnO film during the film formation of 2.7 W / cm 2, Ag film was 0.7 W / cm 2.
【0040】ここで得た熱線遮断膜について上記実施例
と同様の耐湿試験を行ったところ、耐湿試験後の外観
は、直径1mm以上のはっきりした白色斑点、および周
辺部に白濁がみられた。The obtained heat ray shielding film was subjected to the same moisture resistance test as in the above example. As a result, after the moisture resistance test, clear white spots having a diameter of 1 mm or more and white turbidity were observed at the periphery.
【0041】[0041]
【発明の効果】本発明による熱線遮断膜は、耐湿性が著
しく改善されている。このため、単板での取扱が容易に
なると考えられる。また単板での室内長期保存ができ
る。さらに、自動車用、建築用熱線遮断ガラスの信頼性
向上につながる。また、合わせガラスとした際にも中間
膜が含有している水分によって劣化することがないの
で、自動車用、建築用等の合わせガラスの耐久性が向上
する。The heat ray shielding film according to the present invention has remarkably improved moisture resistance. For this reason, it is considered that handling with a single plate becomes easy. In addition, it can be stored for a long time in a single plate. Furthermore, it leads to improvement in reliability of heat ray shielding glass for automobiles and buildings. In addition, even when the laminated glass is used, it is not deteriorated by the moisture contained in the interlayer film, so that the durability of the laminated glass for automobiles and buildings is improved.
【0042】本発明の熱線遮断膜は、金属膜を有してい
るため、熱線遮断性能とともに導電性もある。したがっ
て、本発明の熱線遮断膜は、この導電性を利用して、種
々の技術分野に使用できる。例えば、エレクトロニクス
分野においては電極として(太陽電池の電極などにも使
用できる)、通電加熱窓においては発熱体として、窓や
電子部品においては電磁波遮蔽膜として、使用できる。
基体の上に各種の機能を有する膜を介して本発明の熱線
遮断膜を形成でき、また、本発明の熱線遮断膜の各膜の
最適膜厚を選択するなどにより、その用途に応じて光学
性能を調節できる。Since the heat ray blocking film of the present invention has a metal film, it has conductivity as well as heat ray blocking performance. Therefore, the heat ray blocking film of the present invention can be used in various technical fields utilizing this conductivity. For example, in the field of electronics, it can be used as an electrode (which can also be used as an electrode of a solar cell), as a heating element in an electrically heated window, and as an electromagnetic wave shielding film in windows and electronic components.
The heat ray blocking film of the present invention can be formed on a substrate through films having various functions, and the optimal thickness of each film of the heat ray blocking film of the present invention can be selected, so that an optical film can be formed according to its use. Performance can be adjusted.
【図1】本発明による熱線遮断膜をガラス上に形成した
熱線遮断ガラスの一例の断面図。FIG. 1 is a cross-sectional view of an example of a heat ray blocking glass in which a heat ray blocking film according to the present invention is formed on glass.
1:基体 2:酸化物膜 3:金属膜 4:酸化物膜(B) 1: substrate 2: oxide film 3: metal film 4: oxide film (B)
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) B32B 1/00 - 35/00 C03C 17/00 - 17/34 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) B32B 1/00-35/00 C03C 17/00-17/34
Claims (2)
交互に積層された(2n+1)層(n≧1)からなる熱
線遮断膜において、基体から見て、基体から最も離れた
Agを主成分とする金属膜(A)の上に形成された酸化
物膜(B)はSnの含量がZnとの総量に対し1〜4原
子%である酸化亜鉛膜を少なくとも1層含む熱線遮断
膜。1. A heat ray blocking film composed of (2n + 1) layers (n ≧ 1) alternately laminated with an oxide film, a metal film, and an oxide film on a substrate, when viewed from the substrate, is farthest from the substrate. Was
An oxide film (B) formed on a metal film (A) containing Ag as a main component contains at least one zinc oxide film having a Sn content of 1 to 4 atomic% with respect to the total amount of Zn. Blocking membrane.
少なくとも1層が、Si、Ti、Cr、B、Mg、S
n、Gaのうち少なくとも1種の合量がZnとの総量に
対し1〜10原子%の酸化亜鉛膜である請求項1に記載
の熱線遮断膜。2. An oxide film other than the oxide film (B) has at least one layer of Si, Ti, Cr, B, Mg, S
The heat ray blocking film according to claim 1, wherein the total amount of at least one of n and Ga is a zinc oxide film of 1 to 10 atomic% based on the total amount with Zn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24643299A JP3335599B2 (en) | 1991-12-26 | 1999-08-31 | Heat shielding film |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35781091 | 1991-12-26 | ||
| JP3-357810 | 1991-12-26 | ||
| JP24643299A JP3335599B2 (en) | 1991-12-26 | 1999-08-31 | Heat shielding film |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26668992A Division JP3335384B2 (en) | 1990-07-05 | 1992-09-09 | Heat shielding film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000052476A JP2000052476A (en) | 2000-02-22 |
| JP3335599B2 true JP3335599B2 (en) | 2002-10-21 |
Family
ID=26537717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24643299A Expired - Fee Related JP3335599B2 (en) | 1991-12-26 | 1999-08-31 | Heat shielding film |
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| Country | Link |
|---|---|
| JP (1) | JP3335599B2 (en) |
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|---|---|---|---|---|
| KR101047177B1 (en) * | 2004-12-31 | 2011-07-07 | 주식회사 케이씨씨 | Durable low emission glass |
| JP2007191384A (en) * | 2005-12-22 | 2007-08-02 | Central Glass Co Ltd | Low emissivity glass |
| JP2011063500A (en) * | 2009-08-17 | 2011-03-31 | Central Glass Co Ltd | Heat ray shielding laminated film |
| JP6287502B2 (en) * | 2014-04-03 | 2018-03-07 | セントラル硝子株式会社 | Low radiation window material |
| CN116615680A (en) | 2020-11-24 | 2023-08-18 | 应用材料公司 | Flattened crystalline film for diffractive optical device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990011975A1 (en) | 1989-04-11 | 1990-10-18 | Andus Corporation | Transparent conductive coatings |
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1999
- 1999-08-31 JP JP24643299A patent/JP3335599B2/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990011975A1 (en) | 1989-04-11 | 1990-10-18 | Andus Corporation | Transparent conductive coatings |
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