JP3345561B2 - Magnetic memory element - Google Patents
Magnetic memory elementInfo
- Publication number
- JP3345561B2 JP3345561B2 JP06564097A JP6564097A JP3345561B2 JP 3345561 B2 JP3345561 B2 JP 3345561B2 JP 06564097 A JP06564097 A JP 06564097A JP 6564097 A JP6564097 A JP 6564097A JP 3345561 B2 JP3345561 B2 JP 3345561B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- layer
- memory element
- fine particles
- fine particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Thin Magnetic Films (AREA)
- Semiconductor Memories (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は多層膜から構成され
る磁気メモリ素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic memory device comprising a multilayer film.
【０００２】[0002]
【従来の技術】従来の巨大磁気抵抗（ＧＭＲ）効果を利
用したメモリ素子（例えば、文献Ｊ．Ｌ．Ｂｒｏｗｎ
ｅｔ ａｌ．：ＩＥＥＥ ｔｒａｎｓａｃｔｉｏｎ ｏ
ｆ ｃｏｍｐｏｎｅｎｔｓ，ＰＡＲＴ Ａ．ＶＯＬ １
７，ｐ３７３（１９９４）を参照）においては、記録素
子部分にスピンバルブ構造と称する、二つの磁性層で非
磁性層を挟んだ多層膜構造を有し、この膜に電流を流し
たときに生じる磁気抵抗の差を基本原理として、この基
本素子部分にワード線とビット線を張り巡らしてメモリ
素子を構成するものが提案されてきた。2. Description of the Related Art Conventional memory elements utilizing the giant magnetoresistance (GMR) effect (for example, see JL Brown
et al. ： IEEE transaction o
f components, PART A. VOL 1
7, p. 373 (1994)), the recording element portion has a multi-layer structure called a spin valve structure in which a non-magnetic layer is sandwiched between two magnetic layers, and occurs when a current flows through this film. Based on the difference in magnetic resistance as a basic principle, a device has been proposed in which a memory element is formed by extending a word line and a bit line around this basic element portion.
【０００３】図５はこの磁気抵抗効果を利用したメモリ
の原理を示す。ＧＭＲ膜は第一の磁性層（フリー層；保
磁力の小さい磁性層）、非磁性層、第二の磁性層（ピン
層；保磁力の大きな硬質磁性体）からなり、このＧＭＲ
膜の上に書き込み電極が形成される。この第一の磁性層
の磁化の向きが右向きのときを“０”、左向きのときを
“１”と考えることができる。これはＧＭＲ膜に数十ｍ
Ａの電流を流すことによって感知される。これは、その
抵抗値がフリー層とピン層の磁化の向きが同じときに低
抵抗、逆のときには高抵抗となることを利用している。
データの書き込みは、書き込み電極に電流を流すことに
よって行われる。電流を流す向きによって、電流の発生
する磁化によってフリー層の磁化の方向が変わり、その
方向のどちらかで、“０”と“１”のデータが決定され
る。データの読み込みは、書き込み電極と、読み出し電
極にプラスからマイナスのパルス電流を流し、このとき
のＧＭＲ膜の抵抗変化をみる。フリー層のデータが
“１”のとき抵抗は最小から最大へ、“０”のときは最
大から最小へと変化していく。この抵抗変化を読み出し
電極の電圧変動として出力する。FIG. 5 shows the principle of a memory utilizing the magnetoresistance effect. The GMR film includes a first magnetic layer (free layer; a magnetic layer having a small coercive force), a nonmagnetic layer, and a second magnetic layer (a pinned layer; a hard magnetic material having a large coercive force).
A write electrode is formed on the film. It can be considered that the direction of the magnetization of the first magnetic layer is rightward, "0", and the direction of leftward magnetization is "1". This is several tens of meters for the GMR film.
A is sensed by passing an A current. This utilizes the fact that the resistance value becomes low when the magnetization directions of the free layer and the pinned layer are the same, and high when the magnetization directions are opposite.
Data writing is performed by passing a current through a writing electrode. Depending on the direction in which the current flows, the direction of the magnetization of the free layer changes depending on the magnetization generated by the current, and the data of "0" and "1" is determined in either direction. In reading data, a positive to negative pulse current is applied to the write electrode and the read electrode, and the resistance change of the GMR film at this time is observed. When the data of the free layer is “1”, the resistance changes from the minimum to the maximum, and when the data is “0”, the resistance changes from the maximum to the minimum. This resistance change is output as a voltage change of the readout electrode.
【０００４】この磁気メモリ素子は書き込み、読み出し
が１０15回程度可能である上に構造が簡単なこと、ガラ
スなどの安価な基板の上にも形成できること、不揮発性
であることなど、次世代メモリとして期待が高まってい
る。しかしながら、従来の構造では微細化に限界があ
り、また微細化につれて隣りあった素子間の磁界が関与
しあい、配線どうしの相互作用が起こるなどして微細化
に制限があった。さらに磁気抵抗をはかるスピンドルバ
ルブ構造を含むビット線の配線抵抗が低いために、出力
信号を取り出すために増幅回路などの周辺回路を複雑に
するなど、半導体ＤＲＡＭに比べて不利な点が多かっ
た。This magnetic memory element can be written and read about 10 15 times, has a simple structure, can be formed on an inexpensive substrate such as glass, and is non-volatile. Expectations are growing. However, in the conventional structure, there is a limit to miniaturization, and there is a limit to the miniaturization due to the interaction between wirings caused by the magnetic field between adjacent elements involved with the miniaturization. Furthermore, since the wiring resistance of the bit line including the spindle valve structure for measuring the magnetic resistance is low, there are many disadvantages as compared with the semiconductor DRAM, such as complicating peripheral circuits such as an amplifier circuit for extracting an output signal.
【０００５】[0005]
【発明が解決しようとする課題】従来のＧＭＲ素子は微
細化するにつれ配線間の相互作用を無視できなくなり、
微細化の要求に応えられなくなりつつあった。さらに従
来のメモリ素子では記録素子部分の抵抗が小さいために
配線抵抗に比べて抵抗変化をとらえるのに周辺回路を複
雑にする必要性があった。本発明は上記の事情に鑑みて
発明されたものであり、微細な磁気メモリ素子で素子部
分の抵抗が高く、配線間の相互作用を減少することが可
能な磁気メモリ素子を提供することを目的とする。As the conventional GMR element is miniaturized, the interaction between wirings cannot be ignored.
It was becoming impossible to meet the demand for miniaturization. Further, in the conventional memory element, since the resistance of the recording element portion is small, it is necessary to complicate the peripheral circuit to detect the resistance change as compared with the wiring resistance. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a magnetic memory element which is a fine magnetic memory element and has a high resistance at an element portion and can reduce the interaction between wirings. And
【０００６】[0006]
【課題を解決するための手段】本発明の磁気メモリ素子
は、基板上の非磁性体層内に、磁性体材料からなる微粒
子を含む磁性体微粒子層が、二つ以上空間的に離れて存
在することを特徴とする。また、本発明の磁気メモリ素
子は、少なくとも二つの前記磁性体微粒子層の磁気的状
態の違いに基づく磁気抵抗変化を使用する。According to the magnetic memory element of the present invention, two or more magnetic fine particle layers containing fine particles made of a magnetic material are spatially separated in a nonmagnetic layer on a substrate. It is characterized by doing. Further, the magnetic memory element of the present invention uses a magnetoresistance change based on a difference in magnetic state between at least two of the magnetic fine particle layers.
【０００７】また、本発明の磁気メモリ素子は、基板上
の非磁性体層内に、磁性体材料からなる微粒子を含む磁
性体微粒子層を有すると共に、前記磁性体微粒子層とは
前記非磁性体層の非磁性体材料により隔てられた磁性体
層を有することを特徴とする。また、本発明の磁気メモ
リ素子は、前記磁性体層が、磁性体材料中に埋め込まれ
た磁性体微粒子を含むことを特徴とする。また、本発明
の磁気メモリ素子は、前記磁性体微粒子層と前記磁性体
層との磁気的状態の違いに基づく磁気抵抗変化を使用す
るThe magnetic memory element according to the present invention has a magnetic fine particle layer containing fine particles made of a magnetic material in a nonmagnetic layer on a substrate, and the magnetic fine particle layer is different from the nonmagnetic magnetic layer. It has a magnetic layer separated by a non-magnetic material of the layer. The magnetic memory element according to the present invention is characterized in that the magnetic layer includes magnetic fine particles embedded in a magnetic material. Further, the magnetic memory element of the present invention uses a magnetoresistance change based on a difference in magnetic state between the magnetic fine particle layer and the magnetic layer.
【０００８】また、本発明の磁気メモリ素子は、基板上
に非磁性体層により隔てられた二つの磁性体層が存在す
ると共に、前記磁性体層の一つが磁性体材料中に埋め込
まれた磁性体微粒子を含むことを特徴とする。Further, the magnetic memory element of the present invention has two magnetic layers separated by a non-magnetic layer on a substrate, and one of the magnetic layers is embedded in a magnetic material. It is characterized by containing body particles.
【０００９】また、本発明の磁気メモリ素子は、前記二
つの磁性体層の磁気的状態の違いに基づく磁気抵抗変化
を使用する。本発明においては従来の平面的な磁性層／
非磁性層／磁性層の構造により発現させていた巨大磁気
効果を、磁性微粒子層／非磁性層／磁性微粒子層、もし
くは磁性層／非磁性層／磁性微粒子層の構造にすること
によって、まず、巨大磁気効果を局所的に分離独立して
起こすことを目的としている。非磁性層を挟んだ磁性体
どうしの結合は径が数十ｎｍ以下の微粒子がいくつかま
とまって形成されるため、発生する巨大磁気効果は局所
的となる。Further, the magnetic memory element of the present invention uses a magnetoresistance change based on a difference in magnetic state between the two magnetic layers. In the present invention, the conventional planar magnetic layer /
The giant magnetic effect exhibited by the structure of the non-magnetic layer / magnetic layer is changed to the structure of the magnetic fine particle layer / non-magnetic layer / magnetic fine particle layer or the magnetic layer / non-magnetic layer / magnetic fine particle layer. The purpose is to cause the giant magnetic effect locally and independently. Since the coupling between the magnetic bodies sandwiching the non-magnetic layer is formed by several fine particles having a diameter of several tens of nm or less, the giant magnetic effect that occurs is localized.
【００１０】この構造をメモリに利用する場合、磁性層
の上部に形成されるワード線のサイズに応じてその下の
磁性層中の微粒子のスピンが決定され、ワード線のサイ
ズに合わせた磁性層間のスピンの結合が実現される。こ
れにより従来メサ構造により分離していたビット線間の
素子分離をする必要がなくなり、製造上の簡略化と一層
の微細化が可能になった。また巨大磁気抵抗を生む磁性
体多層膜の一部が微粒子によって構成されるため、流れ
るキャリアーの散乱断面積が増加し、抵抗が増えること
になった。これにより配線部分と比べて素子部分の磁気
抵抗を検値しやすくなり従来余計に設けられていた周辺
回路が不必要にすることを可能にした。When this structure is used for a memory, the spin of the fine particles in the magnetic layer below the magnetic layer is determined according to the size of the word line formed on the magnetic layer, and the magnetic interlayer is adjusted to the size of the word line. Spin coupling is realized. This eliminates the necessity of separating the elements between the bit lines, which has been conventionally separated by the mesa structure, and enables simplification in manufacturing and further miniaturization. Further, since a part of the magnetic multilayer film that produces the giant magnetoresistance is composed of fine particles, the scattering cross section of the flowing carrier increases, and the resistance increases. As a result, the magnetic resistance of the element portion can be easily measured as compared with the wiring portion, and the peripheral circuit which is conventionally provided extra can be made unnecessary.
【００１１】[0011]
【発明の実施の形態】図１は本発明の磁性体構造を持つ
磁気抵抗素子の実施例（請求項２）の断面図を示すこの
磁気抵抗素子の製法は、まず、基板上にＮｉ微粒子１を
蒸着する。この微粒子層を囲むように非磁性層２である
Ｃｕを蒸着する。次にこの非磁性層にＣｏ微粒子７を蒸
着する。この膜上に絶縁膜４を介して、ワード線５を形
成する。この３層からなる磁性体構造に電流を流し、Ｎ
ｉ微粒子とＣｏ微粒子の磁性スピンが同じ方向を向く
か、逆方向を向くかで、磁気抵抗の変化を二値信号とし
て利用する磁気抵抗メモリ素子となる。この実施例のデ
ータの書き込み、読み出し等の動作は、従来例を説明し
た文献と同様に行うことができる。この微粒子としてＮ
ｉ，Ｃｏの他にＮｉＦｅ，ＣｏＦｅ，ＣｏＰｔ，ＮｉＦ
ｅＣｏを、また非磁性体としてＡｇ，Ａｕを利用しても
よい。FIG. 1 is a cross-sectional view of an embodiment (claim 2) of a magnetoresistive element having a magnetic material structure according to the present invention. Is deposited. Cu as the nonmagnetic layer 2 is deposited so as to surround the fine particle layer. Next, Co fine particles 7 are deposited on the non-magnetic layer. A word line 5 is formed on this film via an insulating film 4. An electric current is applied to the three-layer magnetic material structure, and N
The magnetoresistive memory element uses a change in magnetoresistance as a binary signal depending on whether the magnetic spins of the i microparticle and the Co microparticle are in the same direction or in the opposite direction. Operations such as data writing and reading in this embodiment can be performed in the same manner as in the literature describing the conventional example. As these fine particles, N
i, Co besides NiFe, CoFe, CoPt, NiF
eCo may be used, and Ag or Au may be used as the non-magnetic material.
【００１２】図２は微粒子を用いた本発明の磁性体構造
を持つ磁気抵抗素子の実施例（請求項４）の断面図を示
す。この実施例の製法は、まず基板上にＣｏ微粒子１を
積層する。次に非磁性層であるＣｕの層２を蒸着する。
この上部に磁性微粒子であるＣｏ層７を蒸着する。次に
この微粒子を包むようにＣｏＰｔ層８を形成する。最後
に絶縁膜４を介してワード線５を形成する。この微粒
子、これを囲む磁性層として他にＮｉ，ＮｉＦｅ，Ｃｏ
Ｆｅ，ＣｏＰｔ，ＮｉＦｅＣｏの組み合わせを選んでも
よい。また非磁性体としてＡｇ，Ａｕを利用してもよ
い。FIG. 2 is a sectional view of an embodiment (claim 4) of a magnetoresistive element having a magnetic material structure of the present invention using fine particles. In the manufacturing method of this embodiment, first, Co fine particles 1 are laminated on a substrate. Next, a Cu layer 2 which is a nonmagnetic layer is deposited.
On this, a Co layer 7 as magnetic fine particles is deposited. Next, a CoPt layer 8 is formed so as to surround the fine particles. Finally, a word line 5 is formed via the insulating film 4. These fine particles, as a magnetic layer surrounding the fine particles, may be Ni, NiFe, Co
A combination of Fe, CoPt, and NiFeCo may be selected. Also, Ag and Au may be used as the non-magnetic material.
【００１３】図３は微粒子を用いた本発明の磁性体構造
を持つ磁気抵抗素子の実施例（請求項６）の断面図を示
す。この実施例の製法は、まず基板上にＣｏ微粒子１を
蒸着する。この上に非磁性層であるＣｕの層２を形成
し、さらにピン層となる磁性層、ＰｔＣｏ層３を蒸着す
る。この上に絶縁体の膜４を形成し、この上部に書き込
み電極配線であるワード線５を形成する。ビット線とな
る磁性体多層膜と併せてビット線を流れる磁気抵抗の差
を計測することにより、メモリ効果を実現することがで
きる。本実施例ではＣｏ，Ｃｕ，ＣｏＰｔを磁性体とし
て示したが、材料としてはほかにＦｅ，Ｎｉ−Ｆｅ−Ｃ
ｏ，非磁性層としてはＣｒなどの材料、合金を用いても
良い。図４は同様の構造で、特に磁性体微粒子を含む層
を磁性効果を強くするために別の磁性体層で囲んだもの
である。FIG. 3 is a sectional view of an embodiment (claim 6) of a magnetoresistive element having a magnetic material structure of the present invention using fine particles. In the manufacturing method of this embodiment, first, Co fine particles 1 are deposited on a substrate. A Cu layer 2 which is a non-magnetic layer is formed thereon, and a magnetic layer serving as a pin layer and a PtCo layer 3 are further deposited. An insulator film 4 is formed thereon, and a word line 5 serving as a write electrode wiring is formed thereon. The memory effect can be realized by measuring the difference in the magnetic resistance flowing through the bit line together with the magnetic multilayer film serving as the bit line. In this embodiment, Co, Cu and CoPt are shown as magnetic materials, but other materials such as Fe, Ni-Fe-C
For the non-magnetic layer, a material such as Cr or an alloy may be used. FIG. 4 shows a similar structure, in which a layer containing magnetic fine particles is surrounded by another magnetic layer in order to enhance the magnetic effect.
【００１４】図６は本発明による前記各実施例のメモリ
素子の鳥かん図を示す。同図において、磁性層／非磁性
層積層構造は、前記各実施例に置き換えて実施すること
が可能であり、前記積層部分がビット線に相当する。図
２，図３の実施例の動作は、図１の実施例と同様に従来
例を用いることができる。但し、構造的には従来と違
い、磁性体層／非磁性体層／磁性体層の構造を素子分離
する必要がない。これはワード線の発生する磁場の及ぶ
範囲の磁性体微粒子が非磁性体を介したもう一つの磁性
体と結合するためである。これにより、素子分離に伴う
回路内の素子面積が縮小されることになるため、集積度
が大幅に上がる。また、磁性体微粒子層の電気抵抗はバ
ルクな磁性体層よりも大きいため、従来周辺の回路との
出力整合のため必要とされていた、磁気抵抗電流の増幅
回路が不要になる。FIG. 6 is a bird's-eye view of the memory device of each of the embodiments according to the present invention. In the figure, the magnetic layer / non-magnetic layer laminated structure can be implemented in place of each of the above embodiments, and the laminated portion corresponds to a bit line. The operation of the embodiment of FIGS. 2 and 3 can use the conventional example as in the embodiment of FIG. However, unlike the conventional structure, it is not necessary to separate the structure of the magnetic layer / non-magnetic layer / magnetic layer. This is because the magnetic fine particles within the range of the magnetic field generated by the word line are combined with another magnetic material via the non-magnetic material. As a result, the element area in the circuit due to element isolation is reduced, and the degree of integration is greatly increased. Further, since the electric resistance of the magnetic fine particle layer is higher than that of the bulk magnetic material layer, an amplifying circuit for a magnetoresistive current, which has been conventionally required for output matching with peripheral circuits, becomes unnecessary.
【００１５】本実施例ではＣｏ，Ｎｉ，ＣｏＰｔを磁性
体として示したが、材料としては他にＦｅ，Ｎｉ−Ｆｅ
−Ｃｏ，非磁性層としてはＣｒなどの材料、合金を用い
ても良い。In this embodiment, Co, Ni and CoPt are shown as magnetic materials, but other materials such as Fe, Ni-Fe
For the non-magnetic layer, a material or alloy such as Cr may be used.
【００１６】[0016]
【発明の効果】本発明は磁性層／非磁性層／磁性層の一
つまたは両方の磁性層の部分を微粒子の磁性体で置き換
えることにより、巨大磁気効果を引き起こす磁気的な結
合を局所的に発生させることにより、従来必要とされて
いたビット線間の素子分離を不要にすることになり製造
上の簡素化が実現された。また、微粒子構造により素子
を流れる電流抵抗値が増え、従来問題とされていた低抵
抗の問題を克服することを可能にした。According to the present invention, the magnetic coupling causing the giant magnetic effect is locally reduced by replacing one or both magnetic layers of the magnetic layer / non-magnetic layer / magnetic layer with a magnetic material of fine particles. By this generation, element isolation between bit lines, which has been conventionally required, is not required, and simplification in manufacturing is realized. Further, the current resistance value flowing through the element is increased by the fine particle structure, and it has become possible to overcome the problem of low resistance, which has been a problem in the past.
【図１】図１は本発明の第一の実施例にかかる巨大磁気
抵抗素子の断面図。FIG. 1 is a sectional view of a giant magnetoresistive element according to a first embodiment of the present invention.
【図２】図２は本発明の第二の実施例にかかる巨大磁気
抵抗素子の断面図。FIG. 2 is a sectional view of a giant magnetoresistive element according to a second embodiment of the present invention.
【図３】図３は本発明の第三の実施例にかかる巨大磁気
抵抗素子の断面図。FIG. 3 is a sectional view of a giant magnetoresistive element according to a third embodiment of the present invention.
【図４】図４は本発明の第四の実施例にかかる巨大磁気
抵抗素子の断面図。FIG. 4 is a sectional view of a giant magnetoresistive element according to a fourth embodiment of the present invention.
【図５】図５は従来の巨大磁気抵抗素子を表したもの。FIG. 5 shows a conventional giant magnetoresistive element.
【図６】図６は本発明の巨体磁気抵抗素子を使ったメモ
リ素子の外観を表したもの。FIG. 6 shows an appearance of a memory element using the giant magnetoresistive element of the present invention.
１，７…磁性体微粒子 ２…非磁性層 ３，８…磁性層（ピン層） ４…絶縁層 ５…ワード線 ６…磁性体微粒子埋め込み磁性層 ９…磁性層（フリー層） １０…磁性層／非磁性層積層構造 1, 7: magnetic fine particles 2: non-magnetic layer 3, 8: magnetic layer (pin layer) 4: insulating layer 5: word line 6: magnetic layer embedded magnetic fine particles 9: magnetic layer (free layer) / Non-magnetic layer laminated structure
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) G11C 11/14 - 11/15 H01L 27/10 H01L 43/08 H01F 10/32 ＪＩＣＳＴファイル（ＪＯＩＳ） グラ ニュラー──────────────────────────────────────────────────の Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) G11C 11/14-11/15 H01L 27/10 H01L 43/08 H01F 10/32 JICST file (JOIS) Granular
Claims (7)
らなる微粒子を含む磁性体微粒子層が、二つ以上空間的
に離れて存在することを特徴とする磁気メモリ素子。1. A method according to claim 1, wherein the non-magnetic layer on the substrate includes a magnetic material.
A magnetic memory element , wherein two or more magnetic fine particle layers containing fine particles are spatially separated .
磁気的状態の違いに基づく磁気抵抗変化を使用する請求
項１記載の磁気メモリ素子。2. The magnetic memory element according to claim 1 , wherein a magnetoresistance change based on a difference in magnetic state between at least two of said magnetic fine particle layers is used .
らなる微粒子を含む磁性体微粒子層を有すると共に、前
記磁性体微粒子層とは前記非磁性体層の非磁性体材料に
より隔てられた磁性体層を有することを特徴とする磁気
メモリ素子。 3. The method according to claim 1 , wherein the non-magnetic layer on the substrate contains a magnetic material.
Having a magnetic fine particle layer containing fine particles of
The magnetic fine particle layer is a nonmagnetic material of the nonmagnetic layer.
Characterized by having a magnetic layer further separated
Memory element.
まれた磁性体微粒子を含むことを特徴とする請求項３記
載の磁気メモリ素子。 4. The magnetic layer is embedded in a magnetic material.
4. The magnetic recording medium according to claim 3, further comprising magnetic particles.
Onboard magnetic memory element.
磁気的状態の違いに基づく磁気抵抗変化を使用する請求
項３及び４に記載の磁気メモリ素子。 5. The method according to claim 1, wherein the magnetic fine particle layer and the magnetic material layer
Claims using magnetoresistance changes based on differences in magnetic state
Item 5. The magnetic memory device according to items 3 and 4.
つの磁性体層が存在すると共に、前記磁性体層の一つが
磁性体材料中に埋め込まれた磁性体微粒子を含むことを
特徴とする磁気メモリ素子。6. A two-layer structure comprising a nonmagnetic material layer on a substrate.
There are two magnetic layers and one of the magnetic layers is
Including magnetic fine particles embedded in the magnetic material
Characteristic magnetic memory element.
に基づく磁気抵抗変化を使用する請求項６記載の磁気メ7. The magnetic method according to claim 6, wherein a magnetoresistance change based on
モリ素子。Moly element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06564097A JP3345561B2 (en) | 1997-03-19 | 1997-03-19 | Magnetic memory element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06564097A JP3345561B2 (en) | 1997-03-19 | 1997-03-19 | Magnetic memory element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10261287A JPH10261287A (en) | 1998-09-29 |
| JP3345561B2 true JP3345561B2 (en) | 2002-11-18 |
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|---|---|---|---|
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002299584A (en) | 2001-04-03 | 2002-10-11 | Mitsubishi Electric Corp | Magnetic random access memory device and semiconductor device |
| KR100756771B1 (en) * | 2001-06-30 | 2007-09-07 | 주식회사 하이닉스반도체 | Magnetic ram |
| JP4399211B2 (en) | 2002-12-21 | 2010-01-13 | 株式会社ハイニックスセミコンダクター | Biosensor |
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