JP3345929B2 - Semiconductor grade polycrystalline silicon production reactor - Google Patents
Semiconductor grade polycrystalline silicon production reactorInfo
- Publication number
- JP3345929B2 JP3345929B2 JP35221592A JP35221592A JP3345929B2 JP 3345929 B2 JP3345929 B2 JP 3345929B2 JP 35221592 A JP35221592 A JP 35221592A JP 35221592 A JP35221592 A JP 35221592A JP 3345929 B2 JP3345929 B2 JP 3345929B2
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- silicon
- gas
- polycrystalline silicon
- reactor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 57
- 229910052710 silicon Inorganic materials 0.000 claims description 57
- 239000010703 silicon Substances 0.000 claims description 57
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 description 85
- 239000002994 raw material Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 241000482268 Zea mays subsp. mays Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【産業上の利用分野】本発明は、形状不良が少なく表面
が平滑な多結晶シリコンロッドを製造するのに適した半
導体級多結晶シリコン製造反応炉に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor-grade polycrystalline silicon production reactor suitable for producing a polycrystalline silicon rod having a small shape defect and a smooth surface.
【０００２】[0002]
【従来の技術】一般に、半導体級多結晶シリコンは密閉
反応炉の底部に設けたノズルから原料ガスを高温下の反
応炉内に供給し、炉内に設けた赤熱したシリコン心棒表
面で原料ガスを熱分解ないし水素還元させ、シリコン心
棒表面に多結晶シリコンを析出し成長させることにより
製造されている。すなわち、分解してシリコンを析出す
る気体材料、例えば高純度に精製したモノシラン、ジシ
ラン、トリクロルシラン、四塩化珪素、あるいはこれら
と水素の混合物などからなる原料ガスを、高純度のシリ
コン基体に高温下で接触させて熱分解ないし水素還元さ
せ、基体表面にシリコン結晶を析出させて製造する。2. Description of the Related Art In general, semiconductor-grade polycrystalline silicon supplies a raw material gas into a high-temperature reactor through a nozzle provided at the bottom of a closed reactor, and the raw material gas is supplied to the surface of a red-heated silicon mandrel provided in the furnace. It is produced by thermal decomposition or hydrogen reduction to deposit and grow polycrystalline silicon on the surface of a silicon mandrel. That is, a gaseous material that decomposes and deposits silicon, such as a highly purified monosilane, disilane, trichlorosilane, silicon tetrachloride, or a mixture of these and hydrogen, is placed on a high-purity silicon substrate at a high temperature. For thermal decomposition or hydrogen reduction to precipitate silicon crystals on the substrate surface.
【０００３】具体的には、一般に内部が密閉されたベル
ジャ型の炉により反応を行なう。反応炉の内部にはシリ
コン心棒が立設されており、その下端は電極ホルダによ
って支えられており、製造時に該シリコン心棒が赤熱す
るように通電される。また反応炉の底部にはノズルが配
設されており、原料ガスが該ノズルを通じて炉内に供給
される。ノズルから供給された原料ガスは赤熱したシリ
コン心棒に接触して分解還元され、シリコン心棒表面に
多結晶シリコンが析出する。[0003] Specifically, the reaction is generally carried out in a bell jar type furnace whose inside is closed. A silicon mandrel is set up inside the reaction furnace, and the lower end thereof is supported by an electrode holder, and is supplied with electricity so that the silicon mandrel is red-hot during manufacturing. Further, a nozzle is provided at the bottom of the reaction furnace, and the raw material gas is supplied into the furnace through the nozzle. The source gas supplied from the nozzle comes into contact with the red-heated silicon mandrel and is decomposed and reduced, so that polycrystalline silicon is deposited on the surface of the silicon mandrel.
【０００４】最近、半導体級多結晶シリコンの需要が増
大するのに伴い、生産量を高めるために反応炉を大型化
し、反応炉中に数十本のシリコン心棒を設置し、一度に
多量の多結晶シリコンを析出成長させる方法が採られて
いる。ところが、炉内に設置するシリコン心棒の本数が
多くなると、全シリコン心棒表面に原料ガスを安定に供
給することが難しくなり、このため、シリコンロッド表
面に凹凸（ポップコーン）が発生し、またロッドの太さ
が不均一となり形状不良を生じる。ロッド表面に凹凸が
発生すると異常成長を生じ易く、またロッド表面の洗浄
効果が大幅に低下するので好ましくない。ロッド表面の
凹凸をなくすにはシリコン心棒の表面温度を低くし析出
反応を穏やかにすれば良いが、この場合にはシリコンの
析出速度が遅くなり生産性とエネルギー効率を著しく低
下させることになる。Recently, as the demand for semiconductor-grade polycrystalline silicon has increased, the size of a reactor has been increased in order to increase the production amount, and several tens of silicon mandrels have been installed in the reactor. A method of depositing and growing crystalline silicon has been adopted. However, when the number of silicon mandrels installed in the furnace increases, it becomes difficult to stably supply the raw material gas to the entire surface of the silicon mandrel, and as a result, unevenness (popcorn) occurs on the silicon rod surface, The thickness becomes non-uniform, resulting in poor shape. Unevenness on the rod surface is not preferred because abnormal growth is likely to occur and the cleaning effect on the rod surface is greatly reduced. In order to eliminate the irregularities on the rod surface, the surface temperature of the silicon mandrel may be lowered and the deposition reaction may be moderated. However, in this case, the deposition rate of silicon is slowed, and productivity and energy efficiency are remarkably reduced.
【０００５】そこで、従来の反応炉は、多数のシリコン
心棒を設けた場合には炉内のガス流を撹拌してシリコン
心棒表面へのガス接触を良好にするという着想に基づ
き、原料ガス供給用ノズルとガス排気口とを炉底中央部
に設けた構造を有するものが多い。この構造では、炉内
に供給された原料ガスはシリコン心棒に沿って上昇し、
反応後、炉上部から炉底中央部に向かって反転し、その
大部分はガス排気口から外部に導かれる一方、新たな原
料ガスが上昇する循環流が形成される。ところが、上記
構造は反応炉が大型化すると炉内側方部分へのガス供給
が排ガスの循環によって妨げられ易くなり、また排ガス
の一部が必然的に原料ガスと共に上昇することとなる。
その結果、シリコン心棒表面に供給される原料ガスの組
成が悪化し、ロッドの形状不良を生じ易くなる。[0005] Therefore, the conventional reaction furnace is based on the idea that when a large number of silicon mandrels are provided, the gas flow in the furnace is agitated to improve the gas contact with the surface of the silicon mandrel. Many have a structure in which a nozzle and a gas exhaust port are provided at the center of the furnace bottom. In this structure, the raw material gas supplied into the furnace rises along the silicon mandrel,
After the reaction, the furnace is inverted from the furnace upper part toward the furnace bottom central part, and most of the liquid is guided to the outside from the gas exhaust port, and a circulating flow in which new raw material gas rises is formed. However, in the above structure, when the size of the reaction furnace is increased, the gas supply to the inside of the furnace is easily hindered by the circulation of the exhaust gas, and a part of the exhaust gas necessarily rises together with the raw material gas.
As a result, the composition of the raw material gas supplied to the surface of the silicon mandrel is deteriorated, and the shape of the rod is likely to be defective.
【０００６】このように、従来の方法ではその製造反応
炉を大型化した場合、表面が滑らかで凹凸がなく均一な
シリコンロッドを効率よく製造できない問題がある。本
発明は、このような従来の課題を解決するものであり、
表面が滑らかで形状不良のない大型の多結晶シリコンロ
ッドを製造するのに適した反応炉を提供することにあ
る。As described above, in the conventional method, when the size of the manufacturing reactor is increased, there is a problem that a uniform silicon rod having a smooth surface and no irregularities cannot be efficiently manufactured. The present invention is to solve such a conventional problem,
An object of the present invention is to provide a reactor suitable for producing a large-sized polycrystalline silicon rod having a smooth surface and no shape defects.
【０００７】[0007]
【課題を解決するための手段】反応炉内の多数のシリコ
ン心棒に安定に原料ガスを供給するには、反応時に炉内
に供給される原料ガスが各シリコン心棒に対して均一に
流れると共に排ガスが原料ガスの流れを乱さずに炉外に
排出されることが必要である。本発明者らは、電極ホル
ダ、原料ガス供給用ノズルおよびガス排出口の相対的な
配置について検討し、炉内のガス循環を減少させること
により前記目的が達成され、シリコンロッド表面が滑ら
かで形状不良のない多結晶シリコンロッドが製造できる
ことを見出した。In order to stably supply a raw material gas to a large number of silicon mandrels in a reaction furnace, the raw material gas supplied into the furnace at the time of the reaction flows uniformly to each silicon mandrel and the exhaust gas is discharged. Must be discharged out of the furnace without disturbing the flow of the raw material gas. The present inventors studied the relative arrangement of the electrode holder, the material gas supply nozzle and the gas outlet, and achieved the above object by reducing the gas circulation in the furnace, so that the silicon rod surface was smooth and shaped. It has been found that a polycrystalline silicon rod without defects can be manufactured.
【０００８】すなわち、本発明は、密閉反応炉の底部に
複数の原料ガス供給用ノズルを有し、炉底部の電極ホル
ダによって逆Ｕ字型に立設された複数のシリコン心棒に
多結晶シリコンを高温下で析出させる半導体級の多結晶
シリコンを製造する反応炉において、ガス排出口がシリ
コン心棒より上方の上部炉壁面、好ましくは炉天井部お
よび／または炉側壁部に複数個均等に配設されているこ
とを特徴とする半導体級多結晶シリコン製造反応炉を提
供するものである。That is, according to the present invention, a plurality of source gas supply nozzles are provided at the bottom of a closed reactor, and polycrystalline silicon is placed on a plurality of silicon mandrels erected in an inverted U shape by an electrode holder at the bottom of the furnace. In a reactor for producing semiconductor-grade polycrystalline silicon deposited under high temperature, a plurality of gas outlets are uniformly arranged on an upper furnace wall above a silicon mandrel, preferably on a furnace ceiling and / or a furnace side wall. And a semiconductor-grade polycrystalline silicon production reactor.
【０００９】本発明の反応炉はその基本構造として、複
数の原料ガス供給用ノズルおよびシリコン心棒を逆Ｕ字
型に立設するための複数の電極ホルダを炉底部に有する
密閉型の反応炉であり、複数のガス排出口はシリコン心
棒より上方の炉上部に設けられている。The basic structure of the reactor of the present invention is a closed-type reactor having a plurality of source gas supply nozzles and a plurality of electrode holders at the bottom of the furnace for erecting a silicon mandrel in an inverted U-shape. The plurality of gas outlets are provided at the upper part of the furnace above the silicon mandrel.
【００１０】原料ガス供給用ノズルとしては、通常のノ
ズルを用いることができるが、シリコン心棒上部とシリ
コン心棒下部へ独立して原料ガスを供給し、シリコン心
棒上部での原料ガス濃度低下を防止し得るノズル、例え
ば多段ノズル、異流速ノズル、２重ノズル等（特願平3-
326976号，特願平3-326977号，特公昭57-12288号など）
を用いてもよい。これらの特殊なノズルを使用すること
により、さらに表面形状の良好なシリコンロッドを製造
することが可能である。また、炉底部に配設される原料
ガス供給用ノズルと電極ホルダは、全シリコン心棒表面
に対して原料ガス供給の過不足面ができないように配置
することが好ましい。As the material gas supply nozzle, a normal nozzle can be used. However, the material gas is independently supplied to the upper portion of the silicon mandrel and the lower portion of the silicon mandrel to prevent a decrease in the concentration of the material gas at the upper portion of the silicon mandrel. Nozzles to be obtained, for example, multi-stage nozzles, different flow rate nozzles, double nozzles, etc.
326976, Japanese Patent Application No. 3-326977, Japanese Patent Publication No. 57-12288, etc.)
May be used. By using these special nozzles, it is possible to manufacture a silicon rod having a better surface shape. Further, it is preferable that the material gas supply nozzle and the electrode holder provided at the furnace bottom are arranged so that there is no excessive or insufficient surface of the material gas supply with respect to the entire surface of the silicon mandrel.
【００１１】ガス排出口については、従来の反応炉では
前記したように炉底部の特に中央部に配置し、炉内での
ガス循環が起こり易くしていたが、本発明の反応炉にお
いては、そのガス排出口は炉の上部、特にシリコン心棒
の最上部より上部の炉壁面に配置し、ガス循環を抑制す
る。炉底部のノズルより供給される原料ガスは、赤熱し
たシリコン心棒と接触して熱分解あるいは水素還元によ
って表面にシリコンを析出しながら上昇する。また同時
に反応副生ガスが発生する。炉上部に達した排ガスは、
炉内を循環することなく炉上部壁面に設けられたガス排
出口を通じて炉外に排出される。この結果、排ガスを含
んだガス循環が大幅に減少し、常にシリコン心棒表面に
新鮮な原料ガスが供給される。The gas outlet is located at the bottom of the furnace, especially at the center, as described above, in the conventional reactor, so that gas circulation in the furnace is easily caused. However, in the reactor of the present invention, The gas outlet is located on the furnace wall, especially on the furnace wall above the top of the silicon mandrel to suppress gas circulation. The raw material gas supplied from the nozzle at the bottom of the furnace comes into contact with the red-heated silicon mandrel and rises while depositing silicon on the surface by thermal decomposition or hydrogen reduction. At the same time, a reaction by-product gas is generated. The exhaust gas reaching the upper part of the furnace
The gas is discharged out of the furnace through a gas outlet provided in the upper wall surface of the furnace without circulating in the furnace. As a result, the circulation of gas containing exhaust gas is greatly reduced, and fresh raw material gas is always supplied to the surface of the silicon mandrel.
【００１２】炉内でのガス循環を最小限に抑えるために
は、排ガスを効率良く排出することが必要であり、ガス
排出口の配置数、配置場所、排出口の管径等を調整する
ことにより行なわれる。ガス排出口の配置数および配置
場所に関しては、炉内ガスの流れについて偏流やショー
トパスが起きないようにすることが重要であり、このた
め本発明では炉上部に排出口を設ける。具体的な装置構
成においては、ガス排出口の数、管径等は原料ガス供給
用ノズルとシリコン心棒の配置を考慮して定められる
が、概ね炉の上部に均等に配置することが好ましい。ま
た、排出口の管径に関しては排出配管等の圧力損失差に
よる排出量の偏りが生じないように大きくとることが好
ましい。また、シリコン心棒上部と炉天井との空間は、
排出口へのガスの流れを良くするため、およびシリコン
心棒上部先端まで入口ノズルからのガス流れが届くよう
にするため、空間を広くとることが好ましい。In order to minimize the gas circulation in the furnace, it is necessary to discharge the exhaust gas efficiently, and it is necessary to adjust the number and locations of the gas discharge ports, the diameter of the discharge ports, and the like. It is performed by Regarding the number and locations of the gas outlets, it is important to prevent the gas flow in the furnace from causing drift or short path, and therefore, in the present invention, the outlet is provided in the upper part of the furnace. In a specific apparatus configuration, the number of gas outlets, the pipe diameter, and the like are determined in consideration of the arrangement of the raw material gas supply nozzle and the silicon mandrel, but it is preferable that the gas outlets be arranged substantially evenly above the furnace. Further, it is preferable that the pipe diameter of the discharge port is set large so that the discharge amount is not biased due to the pressure loss difference of the discharge pipe or the like. The space between the upper part of the silicon mandrel and the furnace ceiling is
In order to improve the gas flow to the discharge port and to allow the gas flow from the inlet nozzle to reach the upper end of the silicon mandrel, it is preferable to increase the space.
【００１３】[0013]
【実施例】本発明反応炉の好適な態様としては、ガス排
出口を炉天井部に配設するもの、またはガス排出口を炉
側壁上部に配設するものが挙げられる。以下に図面に示
す実施例を参照して本発明を詳細に説明するが、本発明
はこれらに限定されるものではない。DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the reactor of the present invention include a reactor in which a gas outlet is provided on a furnace ceiling, and a reactor in which a gas outlet is provided on an upper portion of a furnace side wall. Hereinafter, the present invention will be described in detail with reference to examples shown in the drawings, but the present invention is not limited thereto.
【００１４】実施例１ 図１（ａ）は本発明に係る反応炉を示す炉天井部の概略
平面図、図１（ｂ）は炉側面の概略縦断面図であり、図
中、１は反応炉の内壁、２はガス排出口、３はシリコン
心棒、４はシリコン心棒を支える電極ホルダ、５は原料
ガス供給用ノズル、６は炉天井部、７は排気管である。
本実施例では、図示するように、ベルジャ型の密閉型反
応炉内に同心円上に等間隔にシリコン心棒３が配列して
おり、炉底部には原料ガス供給用ノズル５が前記シリコ
ン心棒３を支える電極ホルダ４と交互に配列されてい
る。炉天井部６にはガス排出口２が均等に設置されてお
り、該ガス排出口２は、炉天井のほぼ中央、多重に設け
たシリコン心棒の配列の間に対応する位置、および炉内
壁に沿った位置にそれぞれ配設されている。各排出口に
は排気管７が接続している。なお、炉底部には、ガス排
出口は設けられていない。 Embodiment 1 FIG. 1 (a) is a schematic plan view of a furnace ceiling showing a reaction furnace according to the present invention, and FIG. 1 (b) is a schematic vertical sectional view of a furnace side surface. The inner wall of the furnace, 2 is a gas outlet, 3 is a silicon mandrel, 4 is an electrode holder supporting the silicon mandrel, 5 is a material gas supply nozzle, 6 is a furnace ceiling, and 7 is an exhaust pipe.
In this embodiment, as shown in the figure, silicon mandrels 3 are arranged at equal intervals on a concentric circle in a bell-jar type closed reactor, and a raw material gas supply nozzle 5 is provided with the silicon mandrel 3 at the furnace bottom. The supporting electrode holders 4 are alternately arranged. The gas outlets 2 are evenly provided on the furnace ceiling 6, and the gas outlets 2 are located substantially at the center of the furnace ceiling, at positions corresponding to the arrangement between the multiple silicon mandrel arrays, and at the furnace inner wall. It is arranged at the position along. An exhaust pipe 7 is connected to each outlet. No gas outlet is provided at the bottom of the furnace.
【００１５】本実施例においては、炉底部のノズルより
供給される原料ガスがシリコン心棒３の周囲を囲むよう
に上昇し、その間に赤熱したシリコン心棒表面に接触し
て熱分解ないし水素還元によりシリコンを析出させる。
反応後、未反応ガスおよび副生ガスは炉上部に達し、炉
天井部に設けられたガス排出口２より外部に排出され
る。シリコン心棒上部と炉天井との間に十分な広さの空
間が設けられているので、炉上部での排ガスの偏流がな
く、円滑なガスの流れとなっている。In the present embodiment, the raw material gas supplied from the nozzle at the bottom of the furnace rises so as to surround the periphery of the silicon mandrel 3 and contacts the surface of the red-heated silicon mandrel during this time, and the silicon gas is thermally decomposed or reduced by hydrogen. Is precipitated.
After the reaction, the unreacted gas and the by-product gas reach the upper part of the furnace and are discharged outside through a gas outlet 2 provided in the furnace ceiling. Since a sufficiently large space is provided between the upper part of the silicon mandrel and the furnace ceiling, there is no drift of the exhaust gas at the upper part of the furnace, and the gas flows smoothly.
【００１６】従って、炉上部に達した排ガスは炉下部方
向に反転循環させることなく排出されるので、原料ガス
流が排ガスによって乱されずシリコン心棒表面に常に新
鮮な原料ガスが供給されることになり、形状不良のない
大型の多結晶シリコンが得られる。Therefore, the exhaust gas reaching the upper part of the furnace is discharged without being reversed and circulated toward the lower part of the furnace, so that the raw material gas flow is not disturbed by the exhaust gas and fresh raw material gas is always supplied to the surface of the silicon mandrel. Thus, large-sized polycrystalline silicon having no defective shape can be obtained.
【００１７】実施例２ 図２は、本発明の他の実施例に係る反応炉を示し、同図
（ａ）は炉天井部の概略平面図、同図（ｂ）はその概略
縦断面図（ｂ）である。本実施例では、図示するように
シリコン心棒３および原料ガス供給用ノズル５は実施例
１と同様の配置になっているが、ガス排出口２が炉天井
部に近い炉側壁部８に等間隔に設けられている。本実施
例においては、炉底部のノズル５より供給される原料ガ
スがシリコン心棒３の周囲を囲むように上昇し、その間
に赤熱したシリコン心棒表面に接触して熱分解ないし水
素還元によりシリコンを析出させる。反応後、未反応ガ
スおよび副生ガスは炉上部に達し、炉側壁部に設けられ
たガス排出口より外部に排出される。本実施例では、ガ
ス排出口が炉天井部に近い炉側壁部に設けられているの
で、実施例１とほぼ同様の効果を示す。また、シリコン
心棒上部と炉天井部との空間を十分とることによって、
実施例１と同様、炉上部での排ガスの偏流をなくし、ガ
スの流れをさらに良好なものとしている。 Embodiment 2 FIG. 2 shows a reactor according to another embodiment of the present invention. FIG. 2 (a) is a schematic plan view of a furnace ceiling, and FIG. 2 (b) is a schematic longitudinal sectional view thereof. b). In this embodiment, as shown, the silicon mandrel 3 and the material gas supply nozzle 5 are arranged in the same manner as in the first embodiment, but the gas discharge ports 2 are arranged at equal intervals on the furnace side wall 8 near the furnace ceiling. It is provided in. In the present embodiment, the raw material gas supplied from the nozzle 5 at the bottom of the furnace rises so as to surround the silicon mandrel 3 and contacts the surface of the red-heated silicon mandrel during this time to deposit silicon by thermal decomposition or hydrogen reduction. Let it. After the reaction, the unreacted gas and by-product gas reach the upper part of the furnace and are discharged to the outside through a gas outlet provided in the side wall of the furnace. In the present embodiment, since the gas discharge port is provided on the furnace side wall near the furnace ceiling, almost the same effect as in the first embodiment is exhibited. In addition, by taking enough space between the silicon mandrel upper part and the furnace ceiling part,
As in the first embodiment, the drift of the exhaust gas in the upper part of the furnace is eliminated, and the gas flow is further improved.
【００１８】[0018]
【発明の効果】本発明の半導体級多結晶シリコン製造反
応炉は、形状不良が少なく表面が平滑な多結晶シリコン
ロッドを一度に多量に製造できる。The semiconductor-grade polycrystalline silicon production reactor of the present invention can produce a large number of polycrystalline silicon rods having a small shape defect and a smooth surface all at once.
【図１】 （ａ）本発明に係る実施例１の反応炉の炉天
井部の概略平面図および（ｂ）その概略縦断面図。FIG. 1A is a schematic plan view of a furnace ceiling of a reactor according to a first embodiment of the present invention, and FIG. 1B is a schematic longitudinal sectional view thereof.
【図２】 （ａ）本発明に係る実施例２の反応炉の炉天
井部の概略平面図および（ｂ）その概略縦断面図。2A is a schematic plan view of a furnace ceiling of a reactor according to a second embodiment of the present invention, and FIG. 2B is a schematic longitudinal sectional view thereof.
１ 反応炉内壁 ２ ガス排出口 ３ シリコン心棒 ４ 電極ホルダ ５ 原料ガス供給用ノズル ６ 炉天井部 ７ ガス排気管 ８ 炉側壁部 Reference Signs List 1 reactor inner wall 2 gas outlet 3 silicon mandrel 4 electrode holder 5 source gas supply nozzle 6 furnace ceiling 7 gas exhaust pipe 8 furnace side wall
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平２−6317（ＪＰ，Ａ) 特開 昭53−108029（ＪＰ，Ａ) 特開 昭52−151616（ＪＰ，Ａ) 特開 昭52−35605（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C30B 29/06 C01B 33/035 C30B 31/18 ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-2-6317 (JP, A) JP-A-53-108029 (JP, A) JP-A-52-151616 (JP, A) JP-A-52-151616 35605 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) C30B 29/06 C01B 33/035 C30B 31/18
Claims (3)
用ノズルを有し、炉底部の電極ホルダによって逆Ｕ字型
に立設された複数のシリコン心棒に多結晶シリコンを高
温下で析出させる半導体級の多結晶シリコンを製造する
反応炉において、ガス排出口がシリコン心棒より上方の
炉上部に複数個均等に配設されていることを特徴とする
半導体級多結晶シリコン製造反応炉。1. A closed reactor is provided with a plurality of source gas supply nozzles at the bottom thereof, and polycrystalline silicon is deposited at a high temperature on a plurality of silicon mandrels erected in an inverted U shape by an electrode holder at the bottom of the furnace. A reactor for producing semiconductor-grade polycrystalline silicon, wherein a plurality of gas outlets are evenly arranged in a furnace upper portion above a silicon mandrel.
設されていることを特徴とする請求項１に記載の半導体
級多結晶シリコン製造反応炉。2. The semiconductor-grade polycrystalline silicon production reaction furnace according to claim 1, wherein a plurality of gas outlets are uniformly arranged on the furnace ceiling.
配設されていることを特徴とする請求項１に記載の半導
体級多結晶シリコン製造反応炉。3. The reaction furnace according to claim 1, wherein a plurality of gas outlets are evenly arranged on the upper wall of the furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35221592A JP3345929B2 (en) | 1992-12-10 | 1992-12-10 | Semiconductor grade polycrystalline silicon production reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35221592A JP3345929B2 (en) | 1992-12-10 | 1992-12-10 | Semiconductor grade polycrystalline silicon production reactor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06172093A JPH06172093A (en) | 1994-06-21 |
| JP3345929B2 true JP3345929B2 (en) | 2002-11-18 |
Family
ID=18422549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35221592A Expired - Lifetime JP3345929B2 (en) | 1992-12-10 | 1992-12-10 | Semiconductor grade polycrystalline silicon production reactor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3345929B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2077252A2 (en) | 2007-11-28 | 2009-07-08 | Mitsubishi Materials Corporation | Polycrystalline silicon manufacturing apparatus and manufacturing method |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1772429A4 (en) | 2004-06-22 | 2010-01-06 | Shin Etsu Film Co Ltd | METHOD FOR PRODUCING POLYCRYSTALLINE SILICON AND POLYCRYSTALLINE SILICON FOR A SOLAR CELL PRODUCED BY THE METHOD |
| KR101033162B1 (en) * | 2010-01-14 | 2011-05-11 | (주)세미머티리얼즈 | Polysilicon Deposition Equipment |
| JP5360147B2 (en) * | 2011-07-11 | 2013-12-04 | 三菱マテリアル株式会社 | Polycrystalline silicon reduction furnace |
| DE102013204730A1 (en) * | 2013-03-18 | 2014-09-18 | Wacker Chemie Ag | Method of depositing polycrystalline silicon |
| CN105200517A (en) * | 2015-10-29 | 2015-12-30 | 江苏美科硅能源有限公司 | Heightening device for increasing feeding amount of polycrystal furnace |
| CN106276914B (en) * | 2016-09-23 | 2019-03-01 | 中国恩菲工程技术有限公司 | Polysilicon Reduction Furnace |
| CN113106545B (en) * | 2021-03-29 | 2021-12-28 | 浙江晶阳机电股份有限公司 | A kind of silicon core ingot furnace equipment and using method thereof |
| CN113912065A (en) * | 2021-12-02 | 2022-01-11 | 内蒙古新特硅材料有限公司 | Reduction furnace |
| CN114349008B (en) * | 2022-03-18 | 2022-11-04 | 中国恩菲工程技术有限公司 | Chassis, Chassis Components and Reduction Furnaces for Polysilicon Reduction Furnaces |
-
1992
- 1992-12-10 JP JP35221592A patent/JP3345929B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2077252A2 (en) | 2007-11-28 | 2009-07-08 | Mitsubishi Materials Corporation | Polycrystalline silicon manufacturing apparatus and manufacturing method |
| US8329132B2 (en) | 2007-11-28 | 2012-12-11 | Mitsubishi Materials Corporation | Polycrystalline silicon manufacturing apparatus and manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06172093A (en) | 1994-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0368900B1 (en) | Improved reaction chambers and methods for cvd | |
| JP3227549B2 (en) | Reactor for semiconductor grade polycrystalline silicon production | |
| KR950012910B1 (en) | Vapor phase growth apparatus | |
| KR101577452B1 (en) | Polycrystalline silicon reactor | |
| US5876797A (en) | Low temperature high pressure silicon deposition method | |
| EP0502209B1 (en) | Method and apparatus for growing compound semiconductor crystals | |
| CN102325921B (en) | Metalorganic Compound Chemical Vapor Deposition Reactor with Cylindrical Inlet Mechanism | |
| CN103702938B (en) | Polysilicon manufacturing apparatus and polysilicon manufacturing method | |
| JP2867306B2 (en) | Method and apparatus for producing semiconductor grade polycrystalline silicon | |
| JP3345929B2 (en) | Semiconductor grade polycrystalline silicon production reactor | |
| CN103328380B (en) | Poly plant and the manufacture method of polysilicon | |
| KR20010093721A (en) | Air-tight vessel equipped with gas feeder uniformly supplying gaseous component around plural wafers | |
| KR20020070161A (en) | Chemical vapor deposition apparatus and chemical vapor deposition method | |
| US5244694A (en) | Apparatus for improving the reactant gas flow in a reaction chamber | |
| US8450220B2 (en) | Substrate processing apparatus , method of manufacturing semiconductor device, and method of manufacturing substrate | |
| US5096534A (en) | Method for improving the reactant gas flow in a reaction chamber | |
| US5261960A (en) | Reaction chambers for CVD systems | |
| KR100980397B1 (en) | Mocvd reactor for controlling the distributions of metal-organic source gas | |
| CN104981428B (en) | The method of polysilicon deposition | |
| JP2001181097A (en) | Vapor growth apparatus of nitride | |
| JPH0316208A (en) | Apparatus for silicon epitaxial growth | |
| CN220166271U (en) | Deposition preventing device for inner wall of HVPE quartz tube | |
| JP3434972B2 (en) | Semiconductor device manufacturing method and apparatus | |
| JPH05138015A (en) | Nozzle for producing semiconductor grade polycrystalline silicon | |
| JPH06127914A (en) | Production of polycrystalline silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080906 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080906 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090906 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090906 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100906 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100906 Year of fee payment: 8 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100906 Year of fee payment: 8 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100906 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110906 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120906 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130906 Year of fee payment: 11 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130906 Year of fee payment: 11 |