JP3346145B2 - Semiconductor film crystallization method, thin film transistor manufacturing method, active matrix substrate, active matrix substrate manufacturing method, liquid crystal display device, and annealing device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method of crystallizing a semiconductor film for annealing an amorphous semiconductor film to crystallize the same, a method of manufacturing an active matrix using the crystallization method, and a method of manufacturing the same. The present invention relates to an active matrix substrate manufactured by the method described above, a liquid crystal display device using the substrate, and an annealing device used in the crystallization method. More specifically, the present invention relates to a semiconductor film crystallization technique using laser annealing and rapid heating treatment (lamp annealing).

[0002]

2. Description of the Related Art In an active matrix substrate of a liquid crystal display device, it is desired to manufacture a thin film transistor (hereinafter, referred to as a TFT) by a low-temperature process so that a glass substrate can be used as the substrate. Where TF
Among the silicon films required to form the T channel region and the like, the amorphous silicon film can be formed by a low-temperature process, but has a disadvantage that the mobility of the TFT is low.

Therefore, a method of forming a TFT having high mobility by performing laser annealing on an amorphous silicon film formed on a glass substrate to melt-crystallize the amorphous silicon film has been proposed.

[0004]

However, in conventional laser annealing, the processing time is too long, so that the throughput is poor and the crystallization of the semiconductor film is not sufficient, so that a TFT having high mobility cannot be manufactured. There is a problem. Therefore, although a method of combining laser annealing with long-time furnace annealing and a method of combining laser annealing with rapid heating treatment have been studied, in each of these methods, two or more types of annealing are dedicated to each. However, there is a problem that the throughput is poor because it is necessary to perform the processing with the above-mentioned device.

[0005] In view of the above problems, an object of the present invention is to provide:
A method for crystallizing a semiconductor film capable of increasing the degree of crystallization with a high throughput, a method for manufacturing an active matrix substrate using the same, an active matrix substrate manufactured by the method, and a liquid crystal display device using the substrate And an annealing apparatus used in the crystallization method.

[0006]

In order to solve the above problems, in the method of crystallizing a semiconductor film according to the present invention, when directions orthogonal to each other in a plane direction on a substrate are defined as an X direction and a Y direction, In order to crystallize the amorphous semiconductor film formed on the surface of the substrate,
A laser beam irradiation area irradiates a line beam whose irradiation direction is long in the X direction, and a lamp light for rapid heating treatment is irradiated toward the laser light irradiation area. In this state, the laser light and the lamp light are irradiated. Between the irradiation area of
By relatively moving in the direction, in the method of crystallizing a semiconductor film to melt-crystallize the semiconductor film, when irradiating a region where a thin film transistor is to be formed of the semiconductor film, the relative moving speed is reduced, When irradiating the area between the thin film transistors, the relative moving speed is increased.

In the process for melt crystallization, conventionally, a silicon film is heated to a high temperature without thermally damaging a glass substrate in order to actively control the solidification rate of molten silicon (semiconductor). I couldn't do it,
According to the method for crystallizing a semiconductor film according to the present invention, when performing laser annealing, the silicon film is heated in a short time using lamp light, so that the glass substrate is not damaged. Therefore, since the solidification rate of the silicon film can be controlled quite freely, crystal grains of the silicon film can be made large. In addition, since the laser annealing and the rapid heating process are performed simultaneously, the throughput is improved. In addition, since the thin film transistor formation area is irradiated slowly,
Crystal growth is possible.

In the method for crystallizing a semiconductor film according to the present invention,
The directions orthogonal to each other in the plane direction on the substrate are defined as X direction and Y direction.
In order to crystallize the amorphous semiconductor film formed on the surface of the substrate when the direction is set, the semiconductor film is irradiated with a line beam having a laser light irradiation region long in the X direction. Irradiating a lamp light for rapid heating treatment toward an area adjacent to the irradiation area of the laser light,
In this state, the irradiation region of the laser light and the lamp light and the substrate are relatively moved in the Y direction, so that the semiconductor film is melt-crystallized. On the other hand, laser annealing and subsequent rapid heating treatment are performed continuously,
When irradiating a region where a thin film transistor is to be formed, the relative movement speed is reduced, and when irradiating an area between thin film transistors, the relative movement speed is increased.

According to the method of crystallizing a semiconductor film having such a structure, dangling bonds in a silicon film existing after laser annealing can be terminated by a rapid heating process. Since the process is performed continuously, a high-quality silicon film can be obtained with high throughput. In addition, since the region where the thin film transistor is to be formed is slowly irradiated, the crystal can be efficiently grown.

In the method for crystallizing a semiconductor film according to the present invention,
The directions orthogonal to each other in the plane direction on the substrate are defined as X direction and Y direction.
In the annealing step of crystallizing the amorphous semiconductor film formed on the surface of the substrate when the direction is set to the direction, the semiconductor film is irradiated with a line beam whose laser light irradiation region is long in the X direction. At the same time, a lamp light for rapid heating treatment is irradiated toward an area adjacent to the irradiation area of the laser light, and in this state, the irradiation area of the laser light and the lamp light and the substrate are moved in the Y direction. In the method of crystallizing a semiconductor film, wherein the semiconductor film is melt-crystallized by relatively moving, the semiconductor film is continuously subjected to rapid heating treatment and subsequent laser annealing to form a thin film transistor of the semiconductor film. When irradiating the region to be formed, the speed of the relative movement is reduced. When irradiating the region between the thin film transistors, the speed of the relative movement is reduced. The characterized in that it at high speed.

According to the method of crystallizing a semiconductor film having such a structure, dehydrogenation is performed on an amorphous silicon film formed by a plasma CVD method or the like by rapid heating before laser annealing. Since two annealings are performed successively, a high-quality silicon film can be obtained with high throughput. In addition, since only the region where the thin film transistor is to be formed is slowly irradiated, the crystal can be efficiently grown.

In the method for crystallizing a semiconductor film according to the present invention,
The directions orthogonal to each other in the plane direction on the substrate are defined as X direction and Y direction.
In order to crystallize the amorphous semiconductor film formed on the surface of the substrate when the direction is set, the semiconductor film is irradiated with a line beam having a laser light irradiation region long in the X direction. Irradiating the area including the laser light irradiation area with lamp light for rapid heating treatment with an irradiation area wider than the laser light irradiation area, and in this state, the laser light and the lamp light When the semiconductor film is melt-crystallized by relatively moving the irradiation region and the substrate in the Y direction, a central portion in the Y direction of the lamp light irradiation region and a Y portion of the laser light irradiation region are formed. When irradiating the center portion in the direction and irradiating the thin film transistor planned region of the semiconductor film,
The relative movement speed may be reduced, and when irradiating an area between the thin film transistors, the relative movement speed may be increased.

According to the semiconductor film crystallization method having such a configuration, when the semiconductor film is laser-annealed, the semiconductor film is heated in a short time using lamp light, so that the substrate is thermally damaged. The crystal grain of the semiconductor film can be made large without giving the crystal grain. In addition, before the annealing, the semiconductor film is subjected to the dehydrogenation treatment by receiving the lamp light before the laser annealing, and further, receives the lamp light even after the laser annealing to terminate the dangling bonds in the semiconductor film. In addition, since such annealing is performed continuously, a high-quality semiconductor film can be obtained with high throughput. In addition, since only the region where the thin film transistor is to be formed is slowly irradiated, the crystal can be efficiently grown.

In the method for crystallizing a semiconductor film according to the present invention,
The directions orthogonal to each other in the plane direction on the substrate are defined as X direction and Y direction.
In order to crystallize the amorphous semiconductor film formed on the surface of the substrate when the direction is set, the semiconductor film is irradiated with a line beam having a laser light irradiation region long in the X direction. Irradiating the area including the laser light irradiation area with lamp light for rapid heating treatment with an irradiation area wider than the laser light irradiation area, and in this state, the laser light and the lamp light When the semiconductor film is melt-crystallized by relatively moving the irradiation region and the substrate in the Y direction, the center portion in the Y direction of the irradiation region of the lamp light is moved to the Y direction of the irradiation region of the laser light. The substrate is shifted from a central portion in the direction in a direction in which the substrate relatively moves with respect to an irradiation area of the laser light and the lamp light, and a thin film transistor forming area of the semiconductor film is formed. When irradiating is to the speed at which the relative movement at low speed, when irradiating the region between the thin film transistor, characterized by the speed at which the relative moving speed.

According to the method for crystallizing a semiconductor film having such a structure, the semiconductor film is heated in a short time by using lamp light during laser annealing, and therefore, the semiconductor film is crystallized without damaging the glass substrate. The grains can be made larger. Further, since the semiconductor film receives the lamp light even after the laser annealing, dangling bonds in the semiconductor film are sufficiently terminated. In addition, since such annealing is performed continuously, a high-quality semiconductor film can be obtained with high throughput. In addition, since only the region where the thin film transistor is to be formed is slowly irradiated, the crystal can be efficiently grown.

In the method for crystallizing a semiconductor film according to the present invention,
The directions orthogonal to each other in the plane direction on the substrate are defined as X direction and Y direction.
In order to crystallize the amorphous semiconductor film formed on the surface of the substrate when the direction is set, the semiconductor film is irradiated with a line beam having a laser light irradiation region long in the X direction. Irradiating the area including the laser light irradiation area with lamp light for rapid heating treatment with an irradiation area wider than the laser light irradiation area, and in this state, the laser light and the lamp light When the semiconductor film is melt-crystallized by relatively moving the irradiation region and the substrate in the Y direction, the center portion in the Y direction of the irradiation region of the lamp light is moved to the Y direction of the irradiation region of the laser light. From the center in the direction, the substrate is shifted in the direction opposite to the direction in which the substrate relatively moves with respect to the irradiation area of the laser light and the lamp light,
When irradiating a region where a thin film transistor is to be formed, the relative movement speed is reduced, and when irradiating an area between thin film transistors, the relative movement speed is increased.

According to the semiconductor film crystallization method having such a configuration, the semiconductor film is first subjected to a lamp light and subjected to dehydrogenation treatment before laser annealing. Thereafter, at the time of laser annealing, since the semiconductor film is heated in a short time using lamp light, crystal grains of the semiconductor film can be made large without damaging the glass substrate. In addition, since such annealing is performed continuously, a high-quality semiconductor film can be obtained with high throughput. In addition, since only the region where the thin film transistor is to be formed is slowly irradiated, the crystal can be efficiently grown.

The method for manufacturing a thin film transistor according to the present invention comprises:
It is characterized by being formed from a semiconductor film obtained by the crystallization method of the present invention. In addition, a method for manufacturing an active matrix substrate according to the present invention is characterized in that the active matrix substrate is formed using a thin film transistor obtained by the method for manufacturing a thin film transistor according to the present invention. In the method of manufacturing an active matrix substrate according to the present invention, an amorphous semiconductor film formed on a surface of the substrate is crystallized when directions orthogonal to each other in a plane direction on the substrate are defined as an X direction and a Y direction. In order to irradiate the semiconductor film with a line beam whose laser light irradiation area is long in the X direction, and irradiate a lamp light for rapid heating treatment toward the laser light irradiation area,
In this state, in the method of crystallizing a semiconductor film, the semiconductor film is melt-crystallized by relatively moving the irradiation region of the laser light and the lamp light and the substrate in the Y direction. When irradiating a region where a thin film transistor and a driver section are to be formed, the relative movement speed is set to be low, and when irradiating an area between the thin film transistor and the driver section, the relative movement speed is set to be high. And Further, the method of manufacturing an active matrix substrate according to the present invention is characterized in that an amorphous semiconductor film formed on the surface of the substrate is crystallized when directions orthogonal to each other in a plane direction on the substrate are defined as an X direction and a Y direction. To irradiate the semiconductor film with a line beam whose laser light irradiation area is long in the X direction, and a lamp for rapid heating treatment toward an area adjacent to the laser light irradiation area. Irradiating light, and in this state, moving the irradiation region of the laser light and the lamp light and the substrate relatively in the Y direction, thereby melting and crystallizing the semiconductor film. When laser annealing and subsequent rapid heating treatment are continuously performed on the semiconductor film to irradiate a region of the semiconductor film where a thin film transistor and a driver section are to be formed, The speed for relatively moving to the low speed, when irradiating the region between the TFT and the driver section,
The speed of the relative movement is increased. Further, the method of manufacturing an active matrix substrate according to the present invention is characterized in that an amorphous semiconductor film formed on the surface of the substrate is crystallized when directions orthogonal to each other in a plane direction on the substrate are defined as an X direction and a Y direction. In the annealing process,
The semiconductor film is irradiated with a line beam whose laser light irradiation region is long in the X direction, and is irradiated with lamp light for rapid heating treatment toward a region adjacent to the laser light irradiation region, In this state, the irradiation region of the laser light and the lamp light and the substrate are relatively moved in the Y direction, so that the semiconductor film is melt-crystallized. On the other hand, when the rapid heating process and the subsequent laser annealing are continuously performed to irradiate the region of the semiconductor film where the thin film transistor and the driver portion are to be formed, the relative movement speed is reduced, and the speed between the thin film transistor and the driver portion is reduced. When irradiating the region, the speed of the relative movement is increased. Further, the method of manufacturing an active matrix substrate according to the present invention is characterized in that an amorphous semiconductor film formed on the surface of the substrate is crystallized when directions orthogonal to each other in a plane direction on the substrate are defined as an X direction and a Y direction. To irradiate the semiconductor film, a laser beam irradiation region is irradiated with a line beam whose irradiation region is long in the X direction, and a region including the laser light irradiation region is more than the laser light irradiation region. By irradiating a lamp light for rapid heating treatment with a large irradiation area, and in this state, the irradiation area of the laser light and the lamp light and the substrate are relatively moved in the Y direction, whereby the semiconductor film is moved. In melt crystallization, Y in the irradiation area of the lamp light
A central portion in the direction, and Y in the irradiation area of the laser beam.
When the center portion in the direction is overlapped and the semiconductor film is irradiated with the thin film transistor and the driver portion formation planned region, the relative movement speed is reduced, and when irradiating the region between the thin film transistor and the driver portion,
The speed of the relative movement is increased. Further, the method of manufacturing an active matrix substrate according to the present invention is characterized in that an amorphous semiconductor film formed on the surface of the substrate is crystallized when directions orthogonal to each other in a plane direction on the substrate are defined as an X direction and a Y direction. To irradiate the semiconductor film, a laser beam irradiation region is irradiated with a line beam whose irradiation region is long in the X direction, and a region including the laser light irradiation region is more than the laser light irradiation region. By irradiating a lamp light for rapid heating treatment with a large irradiation area, and in this state, the irradiation area of the laser light and the lamp light and the substrate are relatively moved in the Y direction, whereby the semiconductor film is moved. In performing melt crystallization, the center part in the Y direction of the irradiation area of the lamp light is shifted from the center part in the Y direction of the irradiation area of the laser light,
The substrate is shifted in a direction in which the substrate relatively moves with respect to the irradiation area of the laser light and the lamp light,
When irradiating the thin film transistor and the driver section formation scheduled area, the relative movement speed is reduced,
When irradiating an area between the thin film transistor and the driver section, the relative movement speed is increased. Further, the method of manufacturing an active matrix substrate according to the present invention is characterized in that an amorphous semiconductor film formed on the surface of the substrate is crystallized when directions orthogonal to each other in a plane direction on the substrate are defined as an X direction and a Y direction. To irradiate the semiconductor film, a laser beam irradiation region is irradiated with a line beam whose irradiation region is long in the X direction, and a region including the laser light irradiation region is more than the laser light irradiation region. By irradiating a lamp light for rapid heating treatment with a large irradiation area, and in this state, the irradiation area of the laser light and the lamp light and the substrate are relatively moved in the Y direction, whereby the semiconductor film is moved. In performing melt crystallization, the center part of the irradiation area of the lamp light in the Y direction is moved from the center part of the irradiation area of the laser light in the Y direction to the laser light and the laser beam. The substrate is shifted in a direction opposite to the direction in which the substrate relatively moves with respect to the irradiation area of the pump light, and when irradiating the semiconductor film, the thin film transistor and the driver section formation planned area, the relative movement speed is reduced, When irradiating an area between the thin film transistor and the driver section, the relative movement speed is increased. With the configuration of the present invention, a high-performance active matrix substrate can be manufactured.

The annealing apparatus according to the present invention uses a laser beam irradiating apparatus for irradiating a laser beam and a lamp beam irradiating a lamp beam to the annealing apparatus for use in the method for crystallizing a semiconductor film according to the present invention. It is characterized in that both of the devices are provided.

Here, in order to use the annealing method in the method for crystallizing a semiconductor film according to the present invention, the lamp light irradiating device may have an irradiation region wider than a laser light irradiation region in the laser light irradiating device. It is characterized in that it is configured so as to form a lamp light.

[0021]

Embodiments of the present invention will be described with reference to the drawings.

Embodiment 1 (Configuration of Active Matrix Substrate) FIG. 1A is an explanatory diagram schematically showing the configuration of an active matrix substrate of a liquid crystal display device.

In FIG. 1, a liquid crystal display device 1 has a pixel area 5 defined by a data line 3 and a scanning line 4 on an active matrix substrate 2.
A liquid crystal capacitor 6 of a liquid crystal cell to which an image signal is input via a pixel TFT 10 is formed. In the following description,
The directions orthogonal to each other on the active matrix substrate 2 are defined as an X direction and a Y direction.
Extend, and the data line 3 extends in the y direction.
The X direction in the present invention is not limited to the x direction (the direction in which the scanning line 4 extends), and the Y direction in the present invention is the y direction (the direction in which the data line 3 extends) in the present invention. ). The X direction in the present invention means a direction in which the data line 3 extends,
The Y direction in the present invention may mean a direction in which the scanning line 4 extends.

For the data line 3, the shift register 7
1, a data driver unit 7 including a level shifter 72, a video line 73, and an analog switch 74 is configured. For the scanning line 4, a scanning driver unit 8 including a shift register 81 and a level shifter 82 is configured. Note that a storage capacitor 51 may be formed between the pixel region and the preceding scanning line.

In the active matrix section 9 composed of the data line 3, the scanning line 4, the pixel region 5, and the TFT 10,
Although the TFTs 10 are aligned in the X direction and the Y direction, the data driver unit 7 includes N-type TFTs n1 and n2 and a P-type TF as shown in FIG.
Since a CMOS circuit or the like constituted by Tp1 and p2 is formed at a high density, a TFT formed there is formed.
The n1 and n2 and the P-type TFTs p1 and p2 are not always aligned in the X direction and the Y direction. However, the TFT 10 of the active matrix section 9 and the TFTs n1 and n2 of the data driver section 7 and the P-type TFTs p1 and p2 have the same basic structure and are manufactured in the same process.

The active matrix substrate 2 includes only the active matrix section 9 on the substrate, the same substrate on which the data driver section 7 is formed on the same substrate as the active matrix section 9, and the same substrate on which the active matrix section 9 is formed. The one on which the scanning driver unit 8 is configured,
In some cases, both the data driver section 7 and the scanning driver section 8 are formed on the same substrate as the active matrix section 9. Further, even if the active matrix substrate 2 has a built-in driver, the shift register 71, the level shifter 72, the video line 7
3. a complete driver built-in type in which all of the analog switches 74 and the like are configured on the active matrix substrate 2,
There is a partial driver built-in type in which a part thereof is formed on the active matrix substrate 2. The embodiments described below can be applied to any type. In the following description, the active matrix substrate 2 in which the data driver unit 7 is configured on the Y direction side with respect to the active matrix unit 9 will be described as an example. In FIG. 1A, the data driver unit 7 is shown on only one side of the Y direction with respect to the active matrix unit 9, but the data driver units are provided on both sides of the active matrix unit 9 in the Y direction. 7 are often configured. Therefore, in the following description, it is assumed that the data driver units 7 are configured on both sides of the active matrix unit 9 in the Y direction.

FIG. 2 is an enlarged plan view showing one of the pixel regions of the active matrix substrate, and FIG.
FIG. 3B is a sectional view taken along the line II ′ of FIG.
It is sectional drawing in the II-line. Note that the TFTs in the data driver section have basically the same structure, and thus are not shown.

In these figures, any pixel region 5
However, the TFT 10 has the data line 3 on the substrate 20.
, A drain region 12 electrically connected to a pixel electrode 19 through a contact hole 18 in the interlayer insulating film 16, and a drain region 12. A channel region 13 for forming a channel between the semiconductor device and the source region 11, and a gate electrode 15 facing the channel region 13 via a gate insulating film 14. This gate electrode 15 is configured as a part of the scanning line 4. Note that a base protective film 21 made of a silicon oxide film is formed on the front surface side of the substrate 20.

The TFT 10 may be formed at the same position between the pixel regions 5 or may be formed at a symmetrical position between the adjacent pixel regions 5. In one of the directions, the TFTs 10 are often aligned. Utilizing such an aligned structure, the present embodiment uses the following manufacturing method.

(TFT Manufacturing Method) A TFT manufacturing method according to the first embodiment of the present invention will be described with reference to the drawings.

In this example, the following steps are performed using a 235 mm square non-alkali glass plate as a substrate.

FIG. 4 is a sectional view of a TFT process corresponding to a section taken along line II 'of FIG. 2, and FIG. 5 is a sectional view taken along line II-II' of FIG.
FIG. 7 is a process cross-sectional view of a TFT corresponding to a cross section taken along a line.
It should be noted that the TFT in the data driver section is basically manufactured in the same process, and the description thereof will be omitted.

(Step of Forming Underlying Protective Film) FIGS. 4A and 5
In (A), first, 2
Under a temperature condition of 50 ° C. to 300 ° C., a 2000-Å-thick silicon oxide film serving as a base protective film 21 is formed on the surface of the substrate 20. Silicon oxide film is APC
In this case, a silicon oxide film is formed using monosilane (SiH ₄ ) and oxygen as a source gas while the temperature of the substrate 20 is set in a range from 250 ° C. to 450 ° C.

(Semiconductor Film Deposition Step) Next, the underlying protective film 2
600 of an intrinsic silicon film 30 (semiconductor film)
Angstrom is deposited. In this example, the high vacuum type L
Using a PCVD apparatus, disilane (Si
_An amorphous silicon film 30 is deposited at a deposition temperature of 425 ° C. while flowing ₂ H ₆ ) at 200 SCCM. In this high-vacuum type LPCVD apparatus, a substrate is placed inside a reaction chamber, and the temperature inside the reaction chamber is first kept at 250 ° C. In this state, the operation of the turbo-molecular pump is started, and after reaching a steady rotation, the temperature in the reaction chamber is raised to 250
C. to a deposition temperature of 425.degree. During the first 10 minutes after the start of the temperature increase, the temperature was increased in a vacuum without introducing any gas into the reaction chamber.
Continue flowing 9.9999% or more of nitrogen gas at 300 SCCM. After reaching the deposition temperature, disilane (Si ₂ H ₆ ) as a raw material gas was flowed at 200 SCCM, and helium (He) for dilution having a purity of 99.9999% or more was added at 10 ° C.
Flow 00SCCM.

In forming the silicon film 30, a PECVD method or a sputtering method may be used. According to these methods, the film forming temperature can be set in a range from room temperature to 350 ° C.

(Annealing Step) Next, FIGS. 4B and 5
As shown in (B) and (C), the amorphous silicon film 30 is irradiated with laser light LA to modify the silicon film 30 into polycrystalline silicon. In this example, a xenon chloride (XeCl) excimer laser (wavelength: 308 nm) is used.
m). In this step, the laser irradiation is performed in a vacuum atmosphere or an inert gas atmosphere with the substrate 20 at room temperature (25 ° C.).

Further, in this example, as can be seen from FIG. 5B, an arc lamp 91 for performing a rapid heating process on the irradiation area of the laser beam LA, and a reflector 9.
2 so that the irradiation area of the lamp light LC emitted from the arc lamp 91 and the irradiation area of the laser light LA overlap.

In this state, when the substrate 20 is moved in the direction of the arrow Y1 in the Y direction, the irradiation area of the lamp light LC and the irradiation area of the laser light LA become as shown in FIG. It will move in the direction of arrow Y2.

Regarding such an annealing step, in the conventional laser annealing method, crystallization due to solidification of silicon depends on the cooling rate of the silicon film. Usually, an excimer laser is used for laser annealing, and the oscillation time is as short as several tens ns per pulse. Therefore,
It was extremely difficult to control the solidification rate of the silicon film once melted. Conventionally, a method of heating the entire substrate has been used. However, it is difficult to ensure uniform temperature in the substrate, and a time for preliminary heating is required. Further, since the substrate temperature cannot be raised to 600 ° C. or higher from the viewpoint of the heat resistance of the substrate, it cannot be said that the temperature is sufficiently high in view of the melting point of silicon of 1400 ° C.
On the other hand, in this example, since only a limited area around the laser irradiation area is heated in a short time by the rapid heating processing, the temperature can be raised to a temperature of 600 ° C. or more, and the cooling rate of the molten silicon is reduced. This is an extremely effective method for proper control.

Here, the state before the annealing step (the state shown in FIGS. 4A and 5A) is as shown in FIG. Although the silicon film 30 is formed, the portions of the silicon film 30 that should become the source region 11, the drain region 12, and the channel region 13 of the TFT 10 in the active matrix portion 9 are only the portions indicated by the dotted line L1 in FIG. In the data driver section 7, the source region 11, the drain region 12, and the channel region 1 of the TFT 10
The portion that should become 3 is only the portion indicated by the dotted line L2 in FIG.

Therefore, in this example, the active matrix portion 9 has a TF of the silicon film 30 in the Y direction.
The area corresponding to the area A1 where T10 is to be formed is selectively irradiated with laser light LA and lamp light LC,
The laser light LA and the lamp light LC are not positively applied to the region B1 between the ten formation scheduled regions A1.

On the side of the active matrix section 9 on the substrate 20 in the Y direction, a data driver section 7 also having a TFT 10 is formed. In view of arranging a large number of TFTs 10, unlike the active matrix section 9, the area where the TFTs 10 are to be formed is
As shown by the dotted line L2, it is not usually a simple linear arrangement. Therefore, for the data driver unit 7, the TFT 1
Since the laser light LA and the lamp light LC cannot be selectively irradiated to the area where the 0 is to be formed, the laser light LA and the lamp light LC are applied to the entire area A2 of the data driver section 7. Irradiate. The area B between the active matrix section 9 and the data driver section 7
Also in 2, the laser light LA and the lamp light LC are not positively irradiated.

In this example, as shown in FIG. 7A, the irradiation area L1 of the laser beam LA is long in the X direction, and the half width in the intensity profile of the laser beam LA in the Y direction is Y.
Line beam narrower than the pixel pitch PY in the direction (for example, when the repetition frequency of the laser pulse is 200H
z line beam) is applied to the silicon film 30. That is, as shown in FIG. 7B, in the irradiation area L0 of the laser light LA on the silicon film 30, the position in the Y direction is set as the horizontal axis, and the intensity of the laser light LA is set as the vertical axis. In the intensity profile, a line beam having a half width WH (width in a region corresponding to half the intensity of the peak value H) is smaller than the pixel pitch PY in the Y direction. Since the irradiation area of the laser light LA is narrowed in this way, the intensity of the laser light LA in the irradiation area L0 is high without using an expensive and large-sized laser light irradiation apparatus. The spatial distribution of the crystallinity of the laser-crystallized silicon film depends on the intensity profile of the laser beam LA and the overlap ratio. Assume that the half width W of the laser beam LA is
If H is larger than the pixel pitch PY, the period of the crystallinity distribution is always larger than the pixel pitch PY. On the other hand, by using the laser light LA having a half width WH smaller than the pixel pitch PY, the crystallinity distribution can be controlled at a period equal to the pixel pitch PY. This makes it possible to control variations in TFT. Here, as shown in FIG. 7C, the intensity profile of the laser beam LA does not have a Gaussian distribution, and the region showing the maximum value H has a predetermined width. The width in a region corresponding to half the intensity is regarded as the half width WH.

The laser light LA and the lamp light L
In annealing the silicon film 30 using C,
In this example, as shown in FIG. 8A, the positions of the laser light LA and the lamp light LC are fixed, and the substrate 20 is moved by the stage 40 in the Y direction (the direction of the arrow Y1). Then, the melt crystallization of the silicon film 30 is continuously performed. Here, in the irradiation area L0 of the laser beam LA, since the half width WH in the intensity profile of the laser light LA in the Y direction is smaller than the pixel pitch PY, the laser light LA irradiates the area A1 where the TFT 10 is to be formed. In the region B1 during which laser annealing does not need to be performed,
The laser beam LA is not substantially emitted.

On the other hand, as shown in FIG. 8B, when the laser light LA and the lamp light LC irradiate the area A2 where the data driver section 7 is to be formed, the stage 40 is moved at a low speed and the laser light LA and the lamp The light LC is applied to a region B between the data driver portion 7 and the region where the TFT 10 is to be formed.
When irradiating 2, the stage 40 is moved at a high speed. Then, the laser light LA and the lamp light LC are converted into TFTs.
When irradiating the area A1 to be formed 10 with the laser light LA and the lamp light L, the stage 40 is moved at a low speed.
When C irradiates the region B1 between the regions A1 where the TFTs 10 are to be formed, the stage 40 is moved at a high speed. As a result, of the amorphous silicon film 30, only the silicon film 30 in the region irradiated with the laser light LA and the lamp light LC for a long time is selectively melt-crystallized, and becomes a polycrystalline silicon film. In particular, since the data driver unit 7 requires the TFT 10 having a higher operation speed, when the laser light LA and the lamp light LC irradiate the region A2 where the data driver unit 7 is to be formed, as shown in FIG. Thus, the stage 40 is moved at the lowest possible speed. Thus, the laser light LA and the lamp light LC move in the direction of the arrow Y2 while irradiating substantially the same region of the silicon film 30 as shown in FIG. 8C.

(Silicon film patterning step)
As shown in FIGS. 4 (C), 5 (D), and 9, the silicon film 30 subjected to the annealing step is patterned by photolithography to form an island-shaped silicon film 3.
Let it be 1. Here, the alignment between the annealing pattern of the laser annealing performed on the silicon film 30 and the mask pattern used in this patterning step is such that the hue of the silicon film 30 after the laser annealing is the laser beam L0.
This is performed using the fact that it differs depending on the degree of irradiation. That is, the silicon film 30 that is not irradiated with the laser beam L0 and remains amorphous is red, and the laser beam L0
Is irradiated, the polycrystalline silicon film 30 is yellow. Therefore, the alignment between the annealing pattern for the silicon film 30 and the mask pattern for this patterning is performed based on the boundary between the red region and the yellow region.

(Step of Forming Gate Insulating Film) Next, FIG.
(D) and ECR-PECVD as shown in FIG.
The gate oxide film 14 made of a 1200 Å silicon oxide film is formed on the silicon film 31 at a temperature of 250 ° C. to 300 ° C. by the method.

(Gate Electrode Forming Step) Next, a 6000 angstrom thick tantalum thin film is formed on the surface side of the gate oxide film 14 by a sputtering method, and then patterned by photolithography to form a gate electrode 15. To form In this example, when forming a tantalum thin film, the substrate temperature is set to 180 ° C., and an argon gas containing 6.7% of a nitrogen gas is used as a sputtering gas. The tantalum thin film thus formed has an α-structure crystal structure and a specific resistance of 40 μΩcm. Note that the tantalum thin film can also be formed by a CVD method or the like.

(Impurity Introducing Step) Next, using a bucket type non-mass separation type ion implantation apparatus (ion doping apparatus), using the gate electrode 15 as a mask, the silicon film 31 is formed.
Is implanted with impurity ions. As a result, the gate electrode 15
A source region 11 and a drain region 12 are formed in a self-aligned manner. At this time, the silicon film 31
Of these, the portion where the impurity ions are not implanted becomes the channel region 13. In this example, phosphine (P) diluted with hydrogen gas to a concentration of 5% was used as a source gas.
H ₃ ) and the acceleration voltage is 100 keV. The total dose of ions is 1 × 10 ¹⁶ cm ⁻² .

When a P-channel TFT is formed, diborane (B ₂ H ₆ ) diluted with hydrogen gas to a concentration of 5% is used as a source gas.

(Step of Forming Interlayer Insulating Film) Next, FIG.
(E), as shown in FIG. 5 (F), a silicon oxide film having a thickness of 5000 angstroms as the interlayer insulating film 16 is formed under the temperature condition of 250 ° C. to 300 ° C. by PECVD. The source gas at this time is TEOS (Si
— (O—CH ₂ —CH ₃ ) ₄ ) and oxygen. The substrate temperature is between 250C and 300C.

(Activation Step) Next, under an oxygen atmosphere,
A heat treatment at 0 ° C. for one hour is performed to activate the implanted phosphorus ions and to modify the interlayer insulating film 16.

(Wiring Step) Next, contact holes 17 and 18 are formed in the interlayer insulating film 16. Thereafter, the source electrode (data line 3) is electrically connected to the source region 11 via the contact holes 17 and 18, the drain electrode (pixel electrode 19) is electrically connected to the drain region 12, and the TFT 10 is connected. Form.

(Main Effects of First Embodiment) As described above, in the manufacturing method of the active matrix substrate of the present embodiment, in the annealing step, the laser is applied to the region A1 where the pixel TFTs 10 to be arranged in the X direction are to be formed. Irradiation area L0 of light LA
Irradiates a line beam that is longer in the X direction and whose half-value width WH in the intensity profile of the laser beam LA in the Y direction is smaller than the pixel pitch in the Y direction. At the same time, the lamp light LC is irradiated so as to overlap the irradiation area L0 of the laser light LA. For this reason, since the laser annealing and the rapid heating process are performed simultaneously, the annealing effect is high and the throughput is improved as compared with the case where the laser annealing and the rapid heating process are performed in separate steps.
Moreover, in the conventional annealing method, the silicon film 30 can be formed without thermally damaging the substrate 20 (glass substrate) in order to actively control the solidification rate of the molten silicon.
There is no method for heating the substrate 20 to a high temperature. However, in this example, since the silicon film 30 is heated in a short time using the lamp light LC, the substrate 20 is not damaged. Therefore, in this example, since the solidification rate of the silicon film 30 can be controlled quite freely, the crystal grains of the silicon film 30 can be made large.

In this embodiment, the laser light LA and the lamp light LC are intensively applied only to a portion of the silicon film 30 formed on the entire surface of the substrate 20 necessary for manufacturing the TFT 10. LA in the region
And the intensity of the lamp light LC is high. Therefore, the silicon film 30 can be melt-crystallized in a short time, and the throughput can be improved.

Further, in this example, as shown in FIGS. 8A and 8B, the silicon film 30 is moved while the substrate 20 and the laser light LA and the lamp light LC are relatively moved in the Y direction.
When the melt crystallization is continuously performed, the laser light LA and the lamp light LC are supplied to the TFT 10 or the data driver 7.
When irradiating the regions A1 and A2 to be formed, the stage 40 is moved at a low speed. When the laser light LA and the lamp light LC irradiate other regions, the stage 40 is moved.
Move at high speed. Accordingly, the annealing time for useless regions can be reduced, and the throughput is improved.

In this case, in the active matrix section 9, the TFTs 10 are linearly arranged in the X direction, whereas in the data driver section 7, the TFTs 10 are not linearly arranged. Nevertheless, in this example, since the annealing process is performed on the entire area corresponding to the data driver section 7, the TF of the data driver section 7 is converted from the sufficiently crystallized silicon film 30.
Since T10 can be manufactured, the TFT of the data driver section 7
10 also has high mobility.

The channel region 13 of the TFT 10 is
The direction of the channel length is set to be the X direction, and coincides with the longitudinal direction in the irradiation area of the laser light LA and the beam lamp light LC. Therefore, the channel region 13
In this case, insufficient annealing is less likely to occur between the source region 11 and the drain region 12. Therefore, TF
The electrical characteristics of T10 are stable.

Further, since the patterning step is performed after the laser annealing, the laser light LA is not directly applied to the underlying protective film 21. Therefore, it is possible to prevent the base protective film 21 from being damaged. Here, since the hue of the silicon film 30 after the laser annealing differs depending on the degree of irradiation of the laser beam, the annealing pattern of the laser annealing can be determined based on the difference in the hue. Therefore, there is no problem in aligning the laser annealing pattern with the mask pattern used in the patterning step. When alignment is performed in this way,
Since the patterning is performed according to the actual annealing pattern, the positioning accuracy is high.

[Embodiment 2] As in Embodiment 1, the TFT according to the present embodiment also includes a TFT for a pixel and a driver for an active matrix substrate of a liquid crystal display device shown in FIG.
It is used as FT10 and its structure is shown in FIGS.
(A) and (B). Therefore, corresponding parts are denoted by the same reference numerals, and description of those structures is omitted. Only a method of manufacturing the TFT 10 will be described with reference to FIGS.

FIG. 10 is a sectional view of a TFT corresponding to a section taken along the line II 'of FIG. 2, and FIG.
FIG. 9 is a process sectional view of a TFT corresponding to a section taken along line I ′. Note that the TFTs in the data driver section have basically the same structure, and thus are not shown.

In this embodiment, as in the first embodiment, pixel TFTs 10 are formed in the pixel area 5 defined by the data lines 3 and the scanning lines 4 on the active matrix substrate 2, and these TFTs 10 , The active matrix unit 9 is located on a straight line in the X direction. Example 1
Similarly to the above, the data driver units 7 are configured on both sides of the active matrix unit 9 in the Y direction.

This embodiment is different from the first embodiment in that an annealing process is performed after patterning an amorphous silicon film to manufacture the TFT 10 of the active matrix substrate 2.

(Step of Forming Underlying Protective Film) Referring to FIGS. 10A and 11A, first, under the temperature condition of 250 ° C. to 300 ° C. by the ECR-PECVD method, the underlayer protecting film 21 is formed on the surface of the substrate 20. To form a silicon oxide film having a thickness of 2000 Å. The silicon oxide film is A
In this case, a silicon oxide film is formed using monosilane (SiH ₄ ) and oxygen as a source gas while the temperature of the substrate 20 is set in a range from 250 ° C. to 450 ° C.

(Semiconductor Film Deposition Step) Next, the underlying protective film 2
600 of an intrinsic silicon film 30 (semiconductor film)
Angstrom is deposited. In this example, the high vacuum type L
Using a PCVD apparatus, disilane (Si
_An amorphous silicon film 30 is deposited at a deposition temperature of 425 ° C. while flowing ₂ H ₆ ) at 200 SCCM.

(Silicon Film Patterning Step)
As shown in FIGS. 10B and 11B, the silicon film 30 is patterned using a photolithography technique to form an island-shaped silicon film 31.

(Annealing Step) Next, as shown in FIGS. 10 (C), 11 (C) and 11 (D), the amorphous silicon film 30 is irradiated with laser light LA to convert the silicon film 30 into polycrystalline silicon. To be reformed. In this example, a xenon chloride (XeCl) excimer laser (wavelength 308) is used.
(laser annealing / annealing step).
In this step, the laser irradiation causes the substrate 20 to reach room temperature (2
5 ° C.) in a vacuum atmosphere or an inert gas atmosphere.

Further, in this example, as can be seen from FIG. 11C, the arc lamp 91 for performing the rapid heating process and the reflector 92 are directed to the irradiation area of the laser beam LA, and the arc lamp 91 is turned. The irradiation area of the emitted lamp light LC and the irradiation area of the laser light LA are made to overlap.

In this state, if the substrate 20 is moved in the direction of the arrow Y1 in the Y direction, the irradiation area of the lamp light LC and the irradiation area of the laser light LA become as shown in FIG. It will move in the direction of arrow Y2.

Regarding such an annealing step, in the conventional laser annealing method, crystallization due to solidification of silicon depends on the cooling rate of the silicon film. Usually, an excimer laser is used for laser annealing, and the oscillation time is as short as several tens ns per pulse. Therefore,
It was extremely difficult to control the solidification rate of the silicon film once melted. Conventionally, a method of heating the entire substrate 20 has been used, but it is difficult to ensure uniform temperature within the substrate 20, and a time for preheating is required. Further, since the substrate temperature cannot be raised to 600 ° C. or higher from the viewpoint of the heat resistance of the substrate 20, it cannot be said that the temperature is sufficiently high from the viewpoint of the melting point of silicon of 1400 ° C. On the other hand, in this example, since only a limited area around the irradiation area of the laser beam LA is heated in a short time by the rapid heating process, the temperature can be raised to a temperature of 600 ° C. or more, and This is an extremely effective method for appropriately controlling the cooling rate.

When performing this annealing step, as shown in FIG. 12, a base protective film 21 is formed on the entire surface of the substrate 20, and a patterned silicon film 31 is formed on the surface of the base protective film 21. Have been. Therefore, in this example, the portion where the silicon film 31 remains to form the TFT 10 (the region A11 where the silicon film 31 remains in the active matrix portion 9 and the portion where the silicon film 31 remains in the data driver portion 7) A1
Only the laser light LA and the lamp light LC are irradiated to only 2), and the other portions B11 and B12 are not positively irradiated with the laser light LA and the lamp light LC.

Here, in the silicon film 31 for forming the TFT 10 in the active matrix section 9, the TFT 10 is arranged in a straight line in the X direction.
In the data driver section 7, a large number of TFTs 1
From the viewpoint of disposing 0, unlike the active matrix section 9, the silicon films 31 are not arranged in a straight line in the X direction. Therefore, since the laser beam LA and the lamp light LC cannot be selectively irradiated to the silicon film 31 to the data driver section 7, the entire area A12 of the data driver section 7 cannot be irradiated. To irradiate the laser light LA and the lamp light LC.

In this example, FIGS. 7 (A), (B),
As described with reference to (C), the irradiation area L0 of the laser beam LA is long in the X direction and the laser beam LA in the Y direction.
The silicon film 31 is irradiated with a line beam whose half-value width in the intensity profile is smaller than the pixel pitch in the Y direction. Since the irradiation area of the laser light LA is narrowed in this way, the intensity of the laser light LA in the irradiation area L0 is high without using an expensive and large laser light LA irradiation apparatus.

The laser light LA and the lamp light L
In annealing the silicon film 30 using C,
Also in this example, as shown in FIG. 13A, the positions of the laser light LA and the lamp light LC are fixed, and the substrate 20 is moved by the stage 40 in the Y direction (the direction of the arrow Y1). The melt crystallization of the silicon film 31 is continuously performed. In this case, as shown in FIG. 13B, when the laser light LA and the lamp light LC irradiate the area A12 where the data driver section 7 is to be formed, the stage 40 is moved at a low speed, and the laser light LA and the lamp When the light LC irradiates the area B12 between the data driver section 7 and the area where the TFT 10 is to be formed, the stage 40
Move at high speed. When the laser light LA and the lamp light LC irradiate the area A11 where the TFT 10 is to be formed, the stage 40 is moved at a low speed and the laser light L
When A and the lamp light LC irradiate the region B11 between the regions where the TFTs 10 are to be formed, the stage 40 is moved at a high speed. In particular, in the data driver section 7,
Since a TFT 10 with a higher operation speed is required,
The laser light LA and the lamp light LC are supplied to the data driver 7.
When irradiating the region A12 to be formed with
As shown in (B), the stage 40 is moved at as low a speed as possible. Thus, as shown in FIG. 13C, the laser light LA and the lamp light LC are combined with the silicon film 30.
Move in the direction of the arrow Y2 while irradiating substantially the same area of.

(Step of Forming Gate Insulating Film) Next, FIG.
(D) and ECR-PECV as shown in FIG.
A gate oxide film 14 made of a 1200 Å silicon oxide film is formed on the silicon film 31 by the method D under a temperature condition of 250 ° C. to 300 ° C.

(Gate Electrode Forming Step) Next, a 6000 Å-thick tantalum thin film is formed on the surface side of the gate oxide film 14 by a sputtering method, and is patterned by photolithography to form a gate electrode 15. To form In this example, when forming a tantalum thin film, the substrate temperature is set to 180 ° C., and an argon gas containing 6.7% of a nitrogen gas is used as a sputtering gas. The tantalum thin film thus formed has an α-structure crystal structure and a specific resistance of 40 μΩcm. Note that the tantalum thin film can also be formed by a CVD method or the like.

(Impurity Introducing Step) Next, using a bucket type non-mass separation type ion implantation apparatus (ion doping apparatus), using the gate electrode 15 as a mask, the silicon film 31 is formed.
Is implanted with impurity ions. As a result, the gate electrode 15
A source region 11 and a drain region 12 are formed in a self-aligned manner. At this time, the silicon film 31
Of these, the portion where the impurity ions are not implanted becomes the channel region 13. In this example, phosphine (P) diluted with hydrogen gas to a concentration of 5% was used as a source gas.
H ₃ ) and the acceleration voltage is 100 keV. The total dose of ions is 1 × 10 ¹⁶ cm ⁻² .

When a P-channel TFT is formed, diborane (B ₂ H ₆ ) diluted with hydrogen gas to a concentration of 5% is used as a source gas.

(Step of Forming Interlayer Insulating Film) Next, FIG.
(E), as shown in FIG. 11 (F), the interlayer insulating film 16 is formed by a PECVD method under a temperature condition of 250 ° C. to 300 ° C.
A silicon oxide film having a thickness of 5000 Å is formed. The source gas at this time is TEOS (S
_{i- (O-CH 2 -CH 3} ) 4) and is with oxygen. The substrate temperature is between 250C and 300C.

(Activation Step) Next, under an oxygen atmosphere,
A heat treatment at 0 ° C. for one hour is performed to activate the implanted phosphorus ions and to modify the interlayer insulating film 16.

(Wiring Step) Next, contact holes 17 and 18 are formed in the interlayer insulating film 16. Thereafter, the source electrode (data line 3) is electrically connected to the source region 11 via the contact holes 17 and 18, the drain electrode (pixel electrode 19) is electrically connected to the drain region 12, and the TFT 10 is connected. Form.

(Main Effects of Second Embodiment) As described above, in the manufacturing method of the active matrix substrate 2 of this embodiment, in the annealing step, the lamp light LC is irradiated so as to overlap the irradiation area of the laser light LA. Since the laser annealing and the rapid heating process are performed simultaneously, the annealing effect is high, and the throughput is improved as compared with the case where the steps are performed separately.
Moreover, in the conventional annealing method, there was no method of heating the silicon film to a high temperature without thermally damaging the glass substrate in order to actively control the solidification rate of the molten silicon. Since the silicon film is heated in a short time using lamp light, the glass substrate is not damaged. Therefore, in this example, since the solidification rate of the silicon film can be controlled quite freely, the crystal grain size of the silicon film can be increased.

Further, in this example, since the laser light LA and the lamp light LC are intensively applied only to the portion where the silicon film 31 remains, the intensity of the laser light LA and the lamp light LC in this irradiation area is reduced. high. Therefore, the silicon film 30 can be melt-crystallized in a short time, and the throughput can be improved.

In this example, as shown in FIGS. 13A and 13B, the laser beam LA and the lamp
T10 or the area A1 where the data driver unit 7 is to be formed
1. When irradiating A12, the stage 40 is moved at a low speed. When the laser light LA and the lamp light LC irradiate other areas, the stage 40 is moved at a high speed. Accordingly, the annealing time for useless regions can be reduced, and the throughput is improved.

In this case, in the active matrix section 9, the TFTs 10 are arranged linearly in the X direction, whereas in the data driver section 7, the TFTs 10 are not arranged linearly. Nevertheless, in this example, since the annealing process is performed on the entire area corresponding to the data driver section 7, the TFT 1 of the data driver section 7 is converted from the polycrystallized silicon film 31.
0 can be manufactured, so that the TFT 10 of the data driver section 7 can be manufactured.
Even mobility is high.

The channel region 13 of the TFT 10
The direction of the channel length is set to be the X direction, and coincides with the longitudinal direction in the irradiation area of the laser light LA and the lamp light LC. For this reason, in the channel region 13,
Insufficient annealing is less likely to occur between the source region 11 and the drain region 12. Therefore, the electrical characteristics of the TFT 10 are stable.

[Embodiment 3] In the embodiments 1 and 2, the irradiation area of the lamp light LC is set to overlap the irradiation area of the laser light LA. A region adjacent in the Y direction (the direction of arrow Y1) is irradiated with lamp light LC for rapid heating treatment, and in this state, the region irradiated with laser light LA and lamp light LC and substrate 20 are positioned in Y direction. The feature is that laser annealing and subsequent rapid heating treatment are continuously performed on the silicon film by relatively moving in the direction.

As in the first embodiment, the TFT according to the present embodiment also includes a TFT 1 for a pixel and a driver on an active matrix substrate of a liquid crystal display device shown in FIG.
0, and its structure is shown in FIG. 2, FIG.
It is as shown in (B). Therefore, the corresponding portions are denoted by the same reference numerals, description of those structures is omitted, and only the method of manufacturing the TFT 10 is shown in FIG.
This will be described with reference to FIG.

FIG. 14 is a sectional view of a TFT corresponding to a section taken along line II ′ of FIG. 2, and FIG.
FIG. 9 is a process sectional view of a TFT corresponding to a section taken along line I ′. Note that the TFTs in the data driver section have basically the same structure, and thus are not shown. Further, the manufacturing method of the TFT of the present embodiment is substantially the same as that of the first embodiment, and therefore detailed description of common steps is omitted.

(Step of Forming Underlying Protective Film) Referring to FIGS. 14A and 15A, first, under the temperature condition of 250 ° C. to 300 ° C. by the ECR-PECVD method, the underlayer protecting film 21 is formed on the surface of the substrate 20. To form a silicon oxide film having a thickness of 2000 Å.

(Semiconductor Film Deposition Step) Next, the underlying protective film 2
600 of an intrinsic silicon film 30 (semiconductor film)
Angstrom is deposited. In this example, the high vacuum type L
Using a PCVD apparatus, disilane (Si
_An amorphous silicon film 30 is deposited at a deposition temperature of 425 ° C. while flowing ₂ H ₆ ) at 200 SCCM.

(Annealing Step) Next, FIG.
(C), as shown in FIGS. 15B and 15C, the amorphous silicon film 30 is irradiated with laser light LA to modify the silicon film 30 into polycrystalline silicon. In this example, an excimer laser (having a wavelength of 308 nm) of xenon chloride (XeCl) is applied. In this step, the laser irradiation is performed in a vacuum atmosphere or an inert gas atmosphere with the substrate 20 at room temperature (25 ° C.).

Further, in this example, as can be seen from FIG. 15B, the irradiation area of the laser beam LA, the irradiation area of the lamp light LC by the arc lamp 91 for performing the rapid heating process, and the reflector 92 are different. Adjacent in the Y direction. Here, the irradiation area of the lamp light LC is set so as to be located on the side in the moving direction of the substrate 20 (the direction indicated by the arrow Y1) with respect to the irradiation area of the laser light LA.

In this state, if the substrate 20 is moved in the direction of the arrow Y1, as shown in FIGS. 15C and 16, the irradiation area of the lamp light LC and the irradiation area of the laser light LA become the arrow Y2. , The silicon film 30
Is a laser beam LA as shown in FIGS. 14B and 14C.
After the laser annealing is performed, rapid heating processing is subsequently performed by the lamp light LC.

The other conditions are the same as those of the first embodiment, and the description thereof is omitted. However, in this example, since the irradiation area of the lamp light LC and the irradiation area of the laser light LA are shifted in the Y direction, when the annealing is selectively performed in the Y direction of the silicon film 30, the irradiation of the lamp light LC is not performed. The moving condition of the substrate 20 is finely adjusted by the amount of deviation between the irradiation area and the irradiation area of the laser beam LA.

(Silicon film patterning step)
As shown in FIGS. 14D and 15D, the silicon film 30 that has been subjected to the annealing step is patterned using a photolithography technique to form an island-shaped silicon film 31.
And Here, the alignment between the annealing pattern of the laser annealing performed on the silicon film 30 and the mask pattern used in this patterning step indicates that the hue of the silicon film 30 after the laser annealing differs depending on the irradiation degree of the laser beam L0. Use it.

(Step of Forming Gate Insulating Film) Next, FIG.
(E) and ECR-PECV as shown in FIG.
A gate oxide film 14 made of a 1200 Å silicon oxide film is formed on the silicon film 31 by the method D under a temperature condition of 250 ° C. to 300 ° C.

(Gate Electrode Forming Step) Next, a 6000 angstrom thick tantalum thin film is formed on the surface side of the gate oxide film 14 by sputtering, and then patterned by photolithography to form a gate electrode 15. To form

(Impurity Introducing Step) Next, using a bucket type non-mass separation type ion implantation apparatus (ion doping apparatus), the silicon film 31 is formed using the gate electrode 15 as a mask.
Is implanted with impurity ions. As a result, the gate electrode 15
A source region 11 and a drain region 12 are formed in a self-aligned manner. At this time, the silicon film 31
Of these, the portion where the impurity ions are not implanted becomes the channel region 13.

(Step of Forming Interlayer Insulating Film) Next, FIG.
(F), as shown in FIG. 15 (F), the interlayer insulating film 16 is formed at a temperature of 250 ° C. to 300 ° C. by PECVD.
A silicon oxide film having a thickness of 5000 Å is formed.

(Activation Step) Next, under an oxygen atmosphere,
A heat treatment at 0 ° C. for one hour is performed to activate the implanted phosphorus ions and to modify the interlayer insulating film 16.

(Wiring Step) Next, contact holes 17 and 18 are formed in the interlayer insulating film 16. Thereafter, the source electrode (data line 3) is electrically connected to the source region 11 via the contact holes 17 and 18, the drain electrode (pixel electrode 19) is electrically connected to the drain region 12, and the TFT 10 is connected. Form.

(Main effects of Embodiment 3) Such a TFT
In the manufacturing method of No. 10, in the annealing step, the substrate 20
The irradiation area of the arc lamp 91 is on the side of the traveling direction (the direction indicated by the arrow Y1) of the substrate 2.
The irradiation area of the laser beam LC is set on the side opposite to the traveling direction of 0 (the direction indicated by the arrow Y2). With this arrangement, when viewed from the silicon film 30, the laser annealing is performed, and then the rapid heating process is performed. Here, since laser annealing is a method of crystallizing a silicon film by melting and solidifying in a short time of the order of several hundred ns, a large amount of dangling is generated in the silicon film only by laser annealing as in the related art. There is a bond, and this dangling bond traps electrons when the TFT operates, and therefore acts as a potential barrier in the channel to lower the effective mobility.
On the other hand, when a rapid heating process (rapid heating process) is performed after laser annealing as in this example, a very small amount (about 1% to 2%) of hydrogen contained in the silicon film becomes dangling bonds in the crystal. Can be terminated, and the two annealing processes can be performed continuously. Therefore, according to the present example, a high quality silicon film 30 can be obtained with high throughput.

Furthermore, in the rapid heating process, the heating is performed only on the order of seconds, so that the processing speed is faster than that of laser annealing. Therefore, even if the rapid heating process and the laser annealing are continuously performed, there is no need to reduce the processing speed, and the throughput is improved by the continuous processing.

[Fourth Embodiment] In the first and second embodiments, the irradiation area of the lamp light LC is set so as to overlap the irradiation area of the laser light LA. Irradiation is performed with lamp light LC for rapid heating processing toward a region adjacent in the Y direction (direction of arrow Y2), and in this state, an irradiation region of laser light LA and lamp light LC;
By relatively moving the substrate 20 in the Y direction,
It is characterized in that the silicon film is subjected to rapid heating treatment and subsequent laser annealing continuously.

The TFT according to the present embodiment is, similarly to the first embodiment, formed on the active matrix substrate of the liquid crystal display device shown in FIG.
0, and its structure is shown in FIG. 2, FIG.
It is as shown in (B). Therefore, the corresponding portions are denoted by the same reference numerals, and the description of those structures will be omitted. Only the method of manufacturing the TFT 10 will be described with reference to FIG.
This will be described with reference to FIG.

FIG. 17 is a sectional view of a TFT corresponding to a section taken along line II ′ of FIG. 2, and FIG.
FIG. 9 is a process sectional view of a TFT corresponding to a section taken along line I ′. Note that the TFTs in the data driver section have basically the same structure, and thus are not shown. Further, the manufacturing method of the TFT of the present embodiment is substantially the same as that of the first embodiment, and therefore detailed description of common steps is omitted.

(Step of Forming Underlying Protective Film) Referring to FIGS. 17A and 18A, first, under the temperature condition of 250 ° C. to 300 ° C. by the ECR-PECVD method, the underlayer protecting film 21 is formed on the surface of the substrate 20. To form a silicon oxide film having a thickness of 2000 Å.

(Semiconductor Film Deposition Step) Next, the base protective film 2
600 of an intrinsic silicon film 30 (semiconductor film)
Angstrom is deposited. In this example, the high vacuum type L
Using a PCVD apparatus, disilane (Si
_An amorphous silicon film 30 is deposited at a deposition temperature of 425 ° C. while flowing ₂ H ₆ ) at 200 SCCM.

(Annealing Step) Next, FIG.
(C), as shown in FIGS. 18B and 18C, the amorphous silicon film 30 is irradiated with the laser beam LA to modify the silicon film 30 into polycrystalline silicon. In this example, an excimer laser (having a wavelength of 308 nm) of xenon chloride (XeCl) is applied. In this step, the laser irradiation is performed in a vacuum atmosphere or an inert gas atmosphere with the substrate 20 at room temperature (25 ° C.).

Further, in this example, as can be seen from FIG. 18B, the irradiation region of the laser beam LA, the irradiation region of the lamp lamp LC by the arc lamp 91 for performing the rapid heating process, and the reflector 92 are different. Adjacent in the Y direction. Here, the irradiation area of the lamp light LC is opposite to the moving direction of the substrate 20 (the direction indicated by the arrow Y1) with respect to the irradiation area of the laser light LA (the direction indicated by the arrow Y2).
Set to be on the side of.

In this state, when the substrate 20 is moved in the direction of the arrow Y1, as shown in FIGS. 18C and 19, the irradiation area of the lamp light LC and the irradiation area of the laser light LA become the arrow Y2. In the direction of. Therefore, as shown in FIGS. 17B and 17C, the silicon film 30 is subjected to the rapid heating treatment by the lamp light LC, and subsequently to the laser annealing by the laser light LA. .

The other conditions are the same as those in the first embodiment, and the description thereof is omitted. However, in this example, since the irradiation area of the lamp light LC and the irradiation area of the laser light LA are shifted in the Y direction, when the silicon film 30 is selectively annealed, the irradiation of the lamp light LC is not performed. The movement condition of the substrate 20 is finely adjusted by the amount of the deviation between the region and the irradiation region of the laser beam LA.

(Patterning Step of Silicon Film) Next,
As shown in FIGS. 17D and 18D, the silicon film 30 that has been subjected to the annealing step is patterned using a photolithography technique to form an island-shaped silicon film 31.
And Here, the alignment between the annealing pattern of the laser annealing performed on the silicon film 30 and the mask pattern used in this patterning step indicates that the hue of the silicon film 30 after the laser annealing differs depending on the irradiation degree of the laser beam L0. Use it.

(Step of Forming Gate Insulating Film) Next, FIG.
(E) and ECR-PECV as shown in FIG.
A gate oxide film 14 made of a 1200 Å silicon oxide film is formed on the silicon film 31 by the method D under a temperature condition of 250 ° C. to 300 ° C.

(Gate Electrode Forming Step) Next, a 6000 angstrom thick tantalum thin film is formed on the surface side of the gate oxide film 14 by a sputtering method, and then patterned by photolithography to form a gate electrode 15. To form

(Impurity Introducing Step) Next, using a bucket type non-mass separation type ion implantation apparatus (ion doping apparatus), using the gate electrode 15 as a mask, the silicon film 31 is formed.
Is implanted with impurity ions. As a result, the gate electrode 15
A source region 11 and a drain region 12 are formed in a self-aligned manner. At this time, the silicon film 31
Of these, the portion where the impurity ions are not implanted becomes the channel region 13.

(Step of Forming Interlayer Insulating Film) Next, FIG.
(F), as shown in FIG. 18 (F), the interlayer insulating film 16 is formed at a temperature of 250 ° C. to 300 ° C. by PECVD.
A silicon oxide film having a thickness of 5000 Å is formed.

(Activation Step) Next, under an oxygen atmosphere,
A heat treatment at 0 ° C. for one hour is performed to activate the implanted phosphorus ions and to modify the interlayer insulating film 16.

(Wiring Step) Next, contact holes 17 and 18 are formed in the interlayer insulating film 16. Thereafter, the source electrode (data line 3) is electrically connected to the source region 11 via the contact holes 17 and 18, the drain electrode (pixel electrode 19) is electrically connected to the drain region 12, and the TFT 10 is connected. Form.

(Main Effects of Embodiment 4) Such a TFT
In the manufacturing method of No. 10, in the annealing step, the substrate 20
(Direction indicated by arrow Y1)
Arc lamp 9 for rapid heating treatment
There is one irradiation area, and the irradiation area of the laser beam LA is set so as to be adjacent thereto. With this arrangement, when viewed from the silicon film 30, after rapid heating treatment is performed, laser annealing is subsequently performed. Here, since the amorphous silicon film formed by the plasma CVD method contains a large amount of hydrogen of about 10% to 20%, conventionally, laser annealing is performed after dehydrogenation by furnace annealing. ing. On the other hand, in this example, since the laser annealing is continuously performed after the dehydrogenation treatment is performed by the rapid heat treatment (rapid heat treatment), a high-quality silicon film can be obtained with high throughput. Moreover, there is an advantage that it is not necessary to provide a large-scale furnace annealing apparatus.

[Embodiment 5] In this embodiment and Embodiments 6 and 7 described below, the basic configuration is the same as Embodiments 1, 3, and 4. Only the positional relationship with the light irradiation area is different, so in the following description, only such a positional relationship will be described.

In this example, as shown in FIG. 20, the region including the irradiation region of the laser beam LA (laser beam) is
Irradiation with the lamp light LC for rapid heating processing having an irradiation area wider than the irradiation area of the laser light LA, and in this state, the irradiation area of the laser light LA and the lamp light LC and the substrate 20 are relatively moved in the Y direction. By moving the silicon film 3
0 is melt crystallized. At this time, in this example, the lamp light L
The center of the irradiation area of C in the Y direction and the laser light L
The irradiation area A is overlapped with the center in the Y direction.

In this manner, the silicon film 30 first receives the lamp light LC, then receives the lamp light LC and the laser light LC, and thereafter continues to receive the lamp light LC. Therefore, although the amorphous silicon film 30 formed by plasma CVD contains a large amount of hydrogen of about 10% to 20%, the amorphous silicon film 3
No. 0 receives the lamp light LC before the laser annealing and performs the laser annealing after the dehydrogenation processing. Further, when performing annealing with the laser light LC, the silicon film 30 is heated in a short time using the lamp light LC. Therefore, the silicon film 30 can be heated to a high temperature without damaging the substrate 20 (glass substrate). Therefore, the solidification rate of the silicon film 30 can be controlled quite freely, so that the crystal grains of the silicon film 30 can be made large. Further, the silicon film 30
Since the lamp light LC continues to be received after the laser annealing, even if many dangling bonds remain in the silicon film 30 after the laser annealing, the dangling bonds are not affected by the lamp light after the laser annealing. Terminate by LC irradiation. Moreover, since these annealings are performed continuously, according to the present embodiment, a high-quality silicon film 30 can be obtained with high throughput.

[Embodiment 6] In this embodiment as well, as shown in FIG. 21, a laser beam LA (laser beam) irradiation region has a wider irradiation region than the laser beam LA irradiation region. By irradiating the lamp light LC for the heat treatment, and in this state, the irradiation area of the laser light LA and the lamp light LC and the substrate 20 are relatively moved in the Y direction.
The silicon film 30 is melt-crystallized. At this time, in the present example, the center of the irradiation area of the lamp light LC in the Y direction is in the moving direction of the substrate 20 (indicated by an arrow Y1) with respect to the center of the irradiation area of the laser light LA in the Y direction. It is out of alignment.

In this way, the silicon film 30 first receives the lamp light LC for a shorter time than in the fifth embodiment, and then receives the lamp light LC and the laser light LC. The lamp light LC is sufficiently received for a longer time. Therefore, the amorphous silicon film 30 formed by plasma CVD receives the lamp light LC, and is subjected to laser annealing after being subjected to dehydrogenation processing.
Further, when performing annealing with the laser light LC, the silicon film 30 is heated in a short time using the lamp light LC. Therefore, the crystal grains of the silicon film 30 can be made large without damaging the substrate 20 (glass substrate). Further, since the silicon film 30 sufficiently receives the lamp light LC even after the laser annealing, the dangling bonds in the silicon film 30 remaining after the laser annealing are terminated. Moreover, since these annealings are performed continuously, according to the present embodiment, a high-quality silicon film 30 can be obtained with high throughput.

[Embodiment 7] Also in this embodiment, as shown in FIG. 22, a rapid heating process for a laser light LA (laser beam) irradiation area having a wider irradiation area than the laser light LA irradiation area. Is irradiated with the lamp light LC of
Irradiation area of laser beam LA and lamp light LC and substrate 20
Are relatively moved in the Y direction, whereby the silicon film 30 is melt-crystallized. At this time, in the present example, the center part of the irradiation area of the lamp light LC in the Y direction is the moving direction of the substrate 20 (indicated by an arrow Y1) with respect to the center part of the irradiation area of the laser light LA in the Y direction. Are shifted in the opposite direction (indicated by the arrow Y2).

In this way, the silicon film 30 first receives the lamp light LC for a longer time than in the fifth embodiment, and then receives the lamp light LC and the laser beam. The lamp light LC is received for a short time. Therefore, the amorphous silicon film 30 formed by the plasma CVD receives the lamp light LC sufficiently, and is subjected to laser annealing after being subjected to dehydrogenation treatment. Further, when performing annealing with the laser light LC, the silicon film 30 is heated in a short time using the lamp light LC. Therefore, the substrate 20 (glass substrate)
The crystal grains of the silicon film 30 can be made larger without damaging the crystal. Further, the silicon film 30
Is shorter than Example 5 even after the laser annealing is performed. However, since the lamp light LC is received, the dangling bond in the silicon film 30 remaining after the laser annealing is:
Terminate. Moreover, since these annealings are performed continuously, according to the present embodiment, a high-quality silicon film 30 can be obtained with high throughput.

[Other Embodiments] In Examples 3 to 7, the annealing step was performed before the patterning step, as in Example 1. However, as in Example 2, the annealing step was performed after the patterning step. In this annealing step, laser annealing and rapid heating may be performed continuously.

In the first to seventh embodiments, the silicon film 30 is selectively annealed or the patterned silicon film 31 is annealed in order to save the annealing time for useless portions. When the entire silicon film formed on the surface is annealed by combining laser annealing and rapid heating treatment as in Examples 1 to 7, a high-quality silicon film can be obtained with a higher throughput than in the past. it can.

Further, since the crystallinity distribution of the silicon film depends on the overlap ratio of the laser beam LA, from the viewpoint that the periodicity of the crystallinity distribution can be controlled at a period equal to the pixel pitch PY. In the first to seventh embodiments, a line beam whose half-value width in the intensity profile of the laser light LA in the Y direction is smaller than the pixel pitch PY in the Y direction is not limited thereto. Pixel pitch P in the Y direction at half width
Embodiment 1 Even when a line beam wider than Y is used,
By performing annealing combining laser annealing and rapid heating processing as described in 7 to 7, a high-quality silicon film can be obtained with higher throughput than in the past.

Further, in the annealing apparatus used in Examples 1 to 4, both a laser light irradiation apparatus for irradiating laser light LA and a lamp light irradiation apparatus for irradiating lamp light LC are provided. On the other hand, in the annealing apparatuses used in the fifth to seventh embodiments, a laser light irradiation apparatus for irradiating the laser light LA and a lamp light irradiation apparatus for forming the lamp light LC having an irradiation area wider than the irradiation area of the laser light LA Is provided. Here, as shown in FIG. 23A, both the laser light irradiation device and the lamp light irradiation device may be arranged on one of the front surface and the back surface of the substrate 20. As shown in FIG. 23 (B), they may be arranged on the opposite sides of the front and back surfaces of the substrate 20, respectively.

[0133]

As described above, in the method for crystallizing a semiconductor film according to the present invention, in the annealing step, lamp light is irradiated so as to overlap the laser light irradiation area, and the semiconductor film is thin film transistor. When irradiating the region to be formed, the speed of the relative movement is reduced, and when irradiating the region between the thin film transistors,
The speed of the relative movement is increased. Therefore, in the conventional annealing method, there is no method of heating the silicon film (semiconductor film) to a high temperature without thermally damaging the glass substrate in order to actively control the solidification rate of the molten silicon. According to the present invention, since the silicon film is heated in a short time using the lamp light, the glass substrate is not damaged. For this reason, since the solidification rate of the silicon film can be controlled quite freely, the crystal grains of the silicon film can be made large. In addition, since the laser annealing and the rapid heating process are performed simultaneously, the throughput is improved. In addition, since the region where the thin film transistor is to be formed is slowly irradiated, the crystal can be efficiently grown.

In the method for crystallizing a semiconductor film according to the present invention, in the annealing step, a region adjacent to the laser light irradiation region is irradiated with a lamp light for rapid heating treatment to perform laser annealing. Subsequently, a rapid heating process is performed, and when irradiating an area of the semiconductor film where a thin film transistor is to be formed, the relative movement speed is reduced. When irradiating an area between thin film transistors, the relative movement is performed. It is characterized in that the speed at which it is driven is increased. Therefore, in the present invention, the dangling bond in the silicon film existing after the laser annealing can be terminated by the rapid heating treatment.
Since these two annealings are performed continuously, a high-quality silicon film can be obtained with high throughput. Also,
As the thin film semiconductor device formation area is irradiated slowly,
Crystal growth can be performed efficiently.

In the method of crystallizing a semiconductor film according to the present invention, in the annealing step, a lamp light for rapid heating treatment is applied to a region adjacent to the irradiation region of laser light to perform rapid heating treatment. Thereafter, laser annealing is performed subsequently, and when irradiating the region of the semiconductor film where the thin film transistor is to be formed, the relative movement speed is reduced. When irradiating the region between the thin film transistors, the relative movement is performed. It is characterized in that the speed at which it is driven is increased. Therefore, according to the present invention, the amorphous silicon film formed by the plasma CVD method is subjected to the dehydrogenation treatment by the rapid heating treatment before the laser annealing, and the two annealings are performed continuously, so that the high throughput is achieved. Thus, a high-quality silicon film can be obtained. In addition, since the region where the thin film transistor is to be formed is slowly irradiated, the crystal can be efficiently grown.

Further, in the method of crystallizing a semiconductor film according to the present invention, in the annealing step, the region including the laser light irradiation region has a larger irradiation region than the laser light irradiation region. While irradiating the lamp light, a central portion in the Y direction of the irradiation area of the lamp light;
When irradiating the center portion of the irradiation region of the laser light in the Y direction, and irradiating the semiconductor film, the region where the thin film transistor is to be formed, the relative movement speed is set to be low, and the region between the thin film transistors is irradiated It is characterized in that the relative moving speed is increased. Therefore, according to the present invention, when the semiconductor film is laser-annealed, the semiconductor film is heated in a short time by using the lamp light, so that the crystal grain of the semiconductor film is not thermally damaged without damaging the substrate. Can be increased in particle size. In addition, before the annealing, the semiconductor film receives the lamp light before the laser annealing and is subjected to dehydrogenation treatment, and further receives the lamp light after the laser annealing, so that the dangling bonds in the semiconductor film are terminated. In addition, since such annealing is performed continuously, a high-quality semiconductor film can be obtained with high throughput. In addition, since the region where the thin film transistor is to be formed is slowly irradiated, the crystal can be efficiently grown.

Further, in the method for crystallizing a semiconductor film according to the present invention, in the annealing step, the region including the laser light irradiation region has a larger irradiation region than the laser light irradiation region. While irradiating the lamp light, the center part of the irradiation area of the lamp light is shifted in the moving direction of the substrate with respect to the center part of the irradiation area of the laser light, and
When irradiating a region where a thin film transistor is to be formed in the semiconductor film, the relative movement speed is reduced, and when irradiating a region between the thin film transistors, the relative movement speed is increased. . Therefore, according to the present invention, at the time of laser annealing,
Since heating is performed in a short time using lamp light, crystal grains of the semiconductor film can be made large without damaging the glass substrate. Furthermore, since the semiconductor film receives the lamp light after the laser annealing, dangling bonds in the semiconductor film are terminated. In addition, since such annealing is performed continuously, a high-quality semiconductor film can be obtained with high throughput. In addition, since the region where the thin film transistor is to be formed is slowly irradiated, the crystal can be efficiently grown.

In the method for crystallizing a semiconductor film according to the present invention,
In the annealing step, the area including the laser light irradiation area is irradiated with the lamp light for the rapid heating process having an irradiation area wider than the laser light irradiation area, and the center part of the lamp light irradiation area is irradiated with the laser light. It is characterized in that it is shifted to the opposite side to the moving direction of the substrate with respect to the center of the light irradiation area. Therefore, according to the present invention, the semiconductor film is first subjected to lamp light and subjected to dehydrogenation treatment before laser annealing. Thereafter, at the time of laser annealing, since the semiconductor film is heated in a short time using lamp light, crystal grains of the semiconductor film can be made large without damaging the glass substrate. In addition, since such annealing is performed continuously, a high-quality semiconductor film can be obtained with high throughput.

[Brief description of the drawings]

FIG. 1A is an explanatory view schematically showing an active matrix substrate of a liquid crystal display device according to an embodiment of the present invention,
(B) is an explanatory diagram of a CMOS circuit used for the drive circuit.

FIG. 2 is an enlarged plan view showing a pixel region on an active matrix substrate.

FIG. 3A is a sectional view taken along line II ′ of FIG. 2;
FIG. 2B is a cross-sectional view taken along the line II-II ′ of FIG.

4 is a process sectional view of the TFT corresponding to a section taken along line II ′ of FIG. 2 in Example 1 of the present invention;

FIG. 5 is a cross-sectional view of a TFT corresponding to a cross section taken along line II-II ′ of FIG. 2 in the first embodiment of the present invention.

FIG. 6 is an explanatory view schematically showing a portion of the silicon film which needs to be laser-annealed in Example 1 of the present invention.

FIG. 7A is an explanatory view schematically showing a state in which a laser beam is irradiated in an annealing step in Example 1 of the present invention, and FIG. 7B is an intensity profile of the laser beam in a Y direction; C) is an intensity profile of another laser beam in the Y direction.

FIG. 8A is an explanatory view schematically showing a state in which laser light is selectively irradiated in an annealing step in Example 1 of the present invention, and FIG. 8B is a moving speed of a substrate at that time. (C) is an explanatory view showing a positional relationship between a laser light irradiation area and a lamp light irradiation area.

FIG. 9 is an explanatory diagram schematically showing a state in which patterning has been performed after an annealing step in Example 1 of the present invention.

FIG. 10 is a cross-sectional view taken along a line II ′ of FIG. 2 in a second embodiment of the present invention.
FIG. 7 is a process cross-sectional view of a TFT corresponding to a cross section taken along a line.

FIG. 11 is a cross-sectional view taken along the line II-II ′ of FIG. 2 according to the second embodiment of the present invention.
FIG. 7 is a process cross-sectional view of a TFT corresponding to a cross section taken along a line.

FIG. 12 is an explanatory view schematically showing a state where laser light is irradiated in an annealing step in Example 2 of the present invention.

13A is an explanatory view schematically showing a state in which laser light is selectively irradiated in an annealing step in Embodiment 2 of the present invention, and FIG. 13B is a moving speed of a substrate at that time. (C) is an explanatory view showing a positional relationship between a laser light irradiation area and a lamp light irradiation area.

FIG. 14 is a cross-sectional view taken along a line II ′ of FIG. 2 in a third embodiment of the present invention.
FIG. 7 is a process cross-sectional view of a TFT corresponding to a cross section taken along a line.

FIG. 15 is a cross-sectional view taken along the line II-II ′ of FIG. 2 according to the third embodiment of the present invention.
FIG. 7 is a process cross-sectional view of a TFT corresponding to a cross section taken along a line.

FIG. 16 is an explanatory diagram showing a positional relationship between a laser light irradiation region and a lamp light irradiation region in an annealing step in Embodiment 3 of the present invention.

FIG. 17 is a cross-sectional view taken along a line II ′ of FIG. 2 in a fourth embodiment of the present invention.
FIG. 7 is a process cross-sectional view of a TFT corresponding to a cross section taken along a line.

FIG. 18 is a cross-sectional view taken along the line II-II ′ of FIG. 2 according to the fourth embodiment of the present invention.
FIG. 7 is a process cross-sectional view of a TFT corresponding to a cross section taken along a line.

FIG. 19 is an explanatory diagram showing a positional relationship between a laser light irradiation region and a lamp light irradiation region in an annealing step in Embodiment 4 of the present invention.

FIG. 20 is an explanatory diagram showing a positional relationship between a laser light irradiation area and a lamp light irradiation area in an annealing step in Example 5 of the present invention.

FIG. 21 is an explanatory view showing a positional relationship between a laser light irradiation area and a lamp light irradiation area in an annealing step in Example 6 of the present invention.

FIG. 22 is an explanatory diagram showing a positional relationship between a laser light irradiation region and a lamp light irradiation region in an annealing step in Example 7 of the present invention.

FIG. 23 is an explanatory view showing two examples of an annealing apparatus used in Examples 1 to 7 of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Liquid crystal display device 2 ... Active matrix substrate 3 ... Data line 4 ... Scanning line 5 ... Pixel area 6 ... Liquid crystal capacitance 9 ... Active matrix part 10 ... TFT DESCRIPTION OF SYMBOLS 11 ... Source region 12 ... Drain region 13 ... Channel formation region 14 ... Gate insulating film 15 ... Gate electrode 20 ... Substrate (glass substrate) 30 ... Silicon film (semiconductor film) 31: island-shaped silicon film (semiconductor film) 91: arc lamp for rapid heating treatment LA: laser beam LC: lamp light for rapid heating treatment

Claims (18)

(57) [Claims] 1. A semiconductor film formed on a surface of a substrate in order to crystallize an amorphous semiconductor film when directions perpendicular to each other in a plane direction on the substrate are defined as an X direction and a Y direction. In response to this, while irradiating a line beam whose laser light irradiation area is long in the X direction, and irradiating a lamp light for rapid heating treatment toward the laser light irradiation area,
In this state, the irradiation region of the laser light and the lamp light and the substrate are relatively moved in the Y direction, so that the semiconductor film is melt-crystallized. When irradiating a region where a thin film transistor is to be formed, the relative movement speed is reduced, and when irradiating a region between thin film transistors, the relative movement speed is increased. Method. 2. The method according to claim 1, wherein when the directions perpendicular to each other in the plane direction on the substrate are defined as an X direction and a Y direction, the amorphous semiconductor film formed on the surface of the substrate is crystallized. Irradiates a line beam whose laser light irradiation area is long in the X direction, and irradiates a lamp light for rapid heating treatment toward an area adjacent to the laser light irradiation area. A crystallization method for melting and crystallizing the semiconductor film by relatively moving an irradiation region of the laser light and the lamp light and the substrate in the Y direction; Annealing and subsequent rapid heating treatment are performed continuously, and when irradiating the thin film transistor forming region of the semiconductor film, the relative movement speed is reduced, When illuminating the area between the crystallization method of a semiconductor film, characterized by the speed at which the relative moving speed. 3. An annealing step for crystallizing an amorphous semiconductor film formed on a surface of the substrate, wherein directions perpendicular to each other in a plane direction on the substrate are defined as an X direction and a Y direction. The irradiation area of the laser beam is X
While irradiating a long line beam in the direction, and irradiating a lamp light for rapid heating treatment toward a region adjacent to the laser light irradiation region, in this state, the irradiation region of the laser light and the lamp light And the substrate are relatively moved in the Y direction, so that the semiconductor film is melt-crystallized. When irradiating a region where a thin film transistor is to be formed in the semiconductor film, the relative movement speed is reduced, and when irradiating a region between the thin film transistors, the relative movement speed is increased. A method for crystallizing a semiconductor film. 4. The method according to claim 1, wherein when the directions orthogonal to each other in the plane direction on the substrate are set to the X direction and the Y direction, the amorphous semiconductor film formed on the surface of the substrate is crystallized. In response to this, a laser beam irradiation region irradiates a line beam that is long in the X direction, and a region including the laser beam irradiation region has an irradiation region wider than the laser light irradiation region, and a rapid heating process is performed. In this state, the irradiation region of the laser light and the lamp light and the substrate are relatively moved in the Y direction to melt-crystallize the semiconductor film. When the central portion in the Y direction of the irradiation region of light and the central portion in the Y direction of the irradiation region of the laser beam overlap, and the semiconductor film is irradiated with the region where the thin film transistor is to be formed, A method for crystallizing a semiconductor film, comprising: lowering the relative movement speed and increasing the relative movement speed when irradiating a region between thin film transistors. 5. The semiconductor film according to claim 1, wherein when the directions perpendicular to each other in the plane direction on the substrate are defined as an X direction and a Y direction, the amorphous semiconductor film formed on the surface of the substrate is crystallized. In response to this, a laser beam irradiation region irradiates a line beam that is long in the X direction, and a region including the laser beam irradiation region has an irradiation region wider than the laser light irradiation region, and a rapid heating process is performed. In this state, the irradiation region of the laser light and the lamp light and the substrate are relatively moved in the Y direction to melt-crystallize the semiconductor film. The substrate is positioned such that a center portion of the light irradiation region in the Y direction is shifted from a center portion of the laser light irradiation region in the Y direction with respect to the irradiation region of the laser light and the lamp light. When irradiating a region of the semiconductor film where a thin film transistor is to be formed, the relative movement speed is reduced. When irradiating a region between thin film transistors, the relative movement speed is increased. A method for crystallizing a semiconductor film, comprising: 6. The semiconductor film for crystallizing an amorphous semiconductor film formed on a surface of the substrate when directions perpendicular to each other in a plane direction on the substrate are defined as an X direction and a Y direction. In response to this, a laser beam irradiation region irradiates a line beam that is long in the X direction, and a region including the laser beam irradiation region has an irradiation region wider than the laser light irradiation region, and a rapid heating process is performed. In this state, the irradiation region of the laser light and the lamp light and the substrate are relatively moved in the Y direction to melt-crystallize the semiconductor film. The substrate is positioned such that a center portion of the light irradiation region in the Y direction is shifted from a center portion of the laser light irradiation region in the Y direction with respect to the irradiation region of the laser light and the lamp light. In the direction opposite to the direction of movement, the semiconductor film, when irradiating the thin film transistor formation planned area, the relative movement speed is low, when irradiating the area between the thin film transistors,
A method of crystallizing a semiconductor film, wherein the speed of the relative movement is increased. 7. A method for manufacturing a thin film transistor, comprising: forming a semiconductor film obtained by the method for crystallizing a semiconductor film according to claim 1. Description: 8. A method for manufacturing an active matrix substrate, which is formed by using the method for manufacturing a thin film transistor defined in claim 7. 9. The semiconductor film according to claim 1, wherein when the directions perpendicular to each other in the plane direction on the substrate are defined as an X direction and a Y direction, the amorphous semiconductor film formed on the surface of the substrate is crystallized. In response to this, while irradiating a line beam whose laser light irradiation area is long in the X direction, and irradiating a lamp light for rapid heating treatment toward the laser light irradiation area,
In this state, the irradiation region of the laser light and the lamp light and the substrate are relatively moved in the Y direction, so that the semiconductor film is melt-crystallized. When irradiating a region where a thin film transistor and a driver section are to be formed, the relative movement speed is set to be low, and when irradiating an area between the thin film transistor and the driver section, the relative movement speed is set to be high. Of manufacturing an active matrix substrate. 10. A semiconductor film formed on a surface of a substrate when the directions orthogonal to each other in a plane direction on the substrate are defined as an X direction and a Y direction. Irradiates a line beam whose laser light irradiation area is long in the X direction, and irradiates a lamp light for rapid heating treatment toward an area adjacent to the laser light irradiation area. A crystallization method for melting and crystallizing the semiconductor film by relatively moving an irradiation region of the laser light and the lamp light and the substrate in the Y direction; When performing annealing and subsequent rapid heating treatment continuously to irradiate the thin film transistor and the driver portion formation region of the semiconductor film,
The method of manufacturing an active matrix substrate, wherein the speed of the relative movement is reduced, and the speed of the relative movement is increased when irradiating an area between the thin film transistor and the driver section. 11. An annealing step for crystallizing an amorphous semiconductor film formed on a surface of a substrate, wherein directions perpendicular to each other in a plane direction on the substrate are defined as an X direction and a Y direction. The film is irradiated with a line beam whose laser light irradiation area is long in the X direction, and a lamp light for rapid heating treatment is irradiated on an area adjacent to the laser light irradiation area. In the method of crystallizing a semiconductor film, the semiconductor film is melt-crystallized by relatively moving an irradiation region of the laser light and the lamp light and the substrate in the Y direction. When the rapid heating process and the subsequent laser annealing are continuously performed to irradiate the semiconductor film, the thin film transistor and the driver portion forming region,
The method of manufacturing an active matrix substrate, wherein the speed of the relative movement is reduced, and the speed of the relative movement is increased when irradiating an area between the thin film transistor and the driver section. 12. The semiconductor film according to claim 1, wherein when the directions orthogonal to each other in the plane direction on the substrate are defined as an X direction and a Y direction, the amorphous semiconductor film formed on the surface of the substrate is crystallized. In response to this, a laser beam irradiation region irradiates a line beam that is long in the X direction, and a region including the laser beam irradiation region has an irradiation region wider than the laser light irradiation region, and a rapid heating process is performed. In this state, the irradiation region of the laser light and the lamp light and the substrate are relatively moved in the Y direction to melt-crystallize the semiconductor film. The central portion of the light irradiation region in the Y direction and the central portion of the laser light irradiation region in the Y direction are overlapped to illuminate a region of the semiconductor film where a thin film transistor and a driver portion are to be formed. A method of manufacturing the active matrix substrate, wherein, when irradiating the region between the thin film transistor and the driver portion, the relative movement speed is reduced when irradiating the region. . 13. A semiconductor film formed on a surface of a substrate, wherein the directions perpendicular to each other in a plane direction on the substrate are defined as an X direction and a Y direction. In response to this, a laser beam irradiation region irradiates a line beam that is long in the X direction, and a region including the laser beam irradiation region has an irradiation region wider than the laser light irradiation region, and a rapid heating process is performed. In this state, the irradiation region of the laser light and the lamp light and the substrate are relatively moved in the Y direction to melt-crystallize the semiconductor film. The substrate is positioned such that the central portion in the Y direction of the light irradiation region is relative to the laser light and the lamp light irradiation region from the center portion in the Y direction of the laser light irradiation region. When irradiating the region where the thin film transistor and the driver section are to be formed on the semiconductor film, the relative moving speed is reduced, and when irradiating the area between the thin film transistor and the driver section, the relative movement is performed. A method for manufacturing an active matrix substrate, characterized in that a moving speed is increased. 14. A semiconductor film formed on a surface of a substrate when the X-direction and the Y-direction orthogonal to each other in a plane direction on the substrate are used to crystallize an amorphous semiconductor film formed on the surface of the substrate. In response to this, a laser beam irradiation region irradiates a line beam that is long in the X direction, and a region including the laser beam irradiation region has an irradiation region wider than the laser light irradiation region, and a rapid heating process is performed. In this state, the irradiation region of the laser light and the lamp light and the substrate are relatively moved in the Y direction to melt-crystallize the semiconductor film. The substrate is positioned such that the central portion in the Y direction of the light irradiation region is relative to the laser light and the lamp light irradiation region from the center portion in the Y direction of the laser light irradiation region. When irradiating the region where the thin film transistor and the driver portion are to be formed in the semiconductor film, the speed of the relative movement is reduced to irradiate the region between the thin film transistor and the driver portion. A method of manufacturing the active matrix substrate, wherein the speed of the relative movement is increased. 15. An active matrix substrate manufactured by the method for manufacturing an active matrix substrate according to claim 8. 16. A liquid crystal display device comprising the active matrix substrate defined in claim 15. 17. An annealing apparatus used in the method for crystallizing a semiconductor film according to claim 1, wherein the laser beam is irradiated with the laser beam, and the lamp beam is irradiated with the lamp beam. An annealing device comprising a lamp light irradiation device. 18. An annealing apparatus used in the method for crystallizing a semiconductor film according to claim 4, wherein the laser light irradiation apparatus irradiates the laser light, and an irradiation area of the laser light. A lamp light irradiation device for irradiating the lamp light with a wider irradiation area.