JP3346858B2 - Cap for semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to relates <br/> the cap for a semiconductor device.

[0002]

2. Description of the Related Art In a light emitting / receiving device for an LD (laser disk), there is a strong demand for downsizing as home appliances and the like into which the device is incorporated are downsized. FIG. 4 shows the light emitting and receiving device described above, in which a light emitting laser element 11 and a light receiving laser element 12 are mounted on required portions of a stem 10.
These elements are hermetically sealed with a cap 14 having a light transmitting window 13 made of hard glass or the like. Reference numeral 15 denotes a monitor element corresponding to the laser elements 11 and 12. The light transmission window 13 covers the through hole 18 of the cap body 17 and is welded with a low melting point glass 16. 19 is a hologram glass.

[0003]

Conventionally, a light emitting and receiving device for an LD has been provided separately for light emitting and light receiving. However, in recent years, as described above, a common stem is required due to a demand for miniaturization. A device that is capable of transmitting and receiving light with an element mounted thereon has been developed. As described above, the biggest problem due to the miniaturization of the device and the fact that the device is used for both light emission and light reception is a problem of malfunction due to stray light particularly at the time of light reception. FIG. 5 shows a laser device mounting device of a type having no light transmission window. In this apparatus, the hologram glass 19 is bonded and held to the cap body 17 with a resin-based adhesive.
Thus, even in the case of the cap 14 having no light transmission window, there is a problem due to the same stray light as described above.

Accordingly, the present invention has been made to solve the above problems, and it is an object of the present invention to absorb reflected light, prevent stray light, and have a long service life.
To provide a cap for a semiconductor device with high reliability.

[0005]

The present invention has the following arrangement to achieve the above object. That is, a light-transmitting hole is formed, a light-transmitting window body is welded with a low-melting glass containing a lead component so as to cover the light-transmitting hole, and a corrosion-resistant base plating film is formed on the cap body. except for the surface of the transmitting window member, to expose the entire surface of the portion exposed to the outside of the resistance <br/>蝕下locations plating film provided on the cap body, and <br/> outside before Symbol low melting glass The entire surface of the portion is covered with a black nickel plating film deposited and deposited by black nickel plating. Further, the corrosion-resistant base plating film is an electrolytic nickel film, an electroless nickel film, an electrolytic nickel-phosphorous film, or an electrolytic nickel-boron film. Further, the black nickel plating film is an electrolytic black nickel film or an electrolytic tin-nickel film.

[0006]

According to the semiconductor device cap of the present invention,
The outer surface of the corrosion-resistant base plating film provided on the cap body, and
Exposure of the low-melting-point glass that has fused the light-transmitting window
Since the surface is covered with the black nickel plating film that has been subjected to black nickel plating and deposited , light reflection can be prevented, stray light can be prevented as much as possible, and a highly reliable semiconductor device cap can be provided. Further, deposited on the surface of the low melting point glass welding the light transmitting window body caps body
The black nickel plating film acts as a protective film for the low-melting glass, thereby providing a long-life semiconductor device cap.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 shows a first embodiment of a laser device mounting device cap with a light transmitting window. Reference numeral 21 denotes a cap body made of a metal such as an iron-nickel alloy and an iron-nickel-cobalt alloy. A through hole 22 is formed in the upper surface of the cap body 21. Cap body 21
First, a corrosion-resistant underlying plating film 23 is formed on the surface. As the corrosion-resistant base plating, electrolytic nickel plating, electrolytic nickel-phosphorus plating, electrolytic nickel-boron plating, or electroless nickel plating is preferable.
Although the thickness of the corrosion-resistant base plating film 23 is not particularly limited,
It may be about 2 to 7 μm.

Next, a light-transmitting window 25 made of hard glass or the like is welded with a low-melting glass 24 so as to cover the through-hole 22 of the cap body 21. This welding temperature is 450 ~
It is about 500 ° C. Electrolytic black nickel plating is applied to the cap body 21 to which the light transmitting window 25 is welded to form a black nickel plating film 26. Electrolytic black nickel plating includes zinc sulfide as an additive and electrolytic tin-nickel plating. Since the low-melting glass 24 contains a large amount of lead, the black nickel plating film 26 is deposited not only on the corrosion-resistant underlying plating film 23 but also on the surface of the low-melting glass 24 to form a thin film. You. If the black nickel plating film 26 formed by electrolytic black nickel plating is too thick, it becomes an obstacle in capping when the cap is fixed to the stem by resistance welding or the like. Therefore, the thickness is preferably about 0.1 to 1.0 μm.

When the cap produced as described above was fixed to the stem by laser welding and the light emitting and receiving characteristics were examined, the reflected light of the incident light was subjected to a blackening treatment of the cap body 21 especially at the time of light reception. It was absorbed by the inner surface, and stray light was prevented from being generated. Usually, the low melting point glass 24 is vulnerable to moisture and the like, and the airtightness tends to gradually deteriorate with time. However, in this embodiment, as described above, the black nickel plating film 26 Since the film is formed, the film acts as a protective film for the low-melting glass 24,
The weather resistance of the low-melting glass 24 was significantly improved, and the life characteristics of the optical device were improved.

FIG. 2 shows a second embodiment of a cap for a laser device mounting apparatus. In this embodiment, the cap main body 21 is placed in a furnace and heated and oxidized to form an oxide film (not shown) on the surface.
Is welded to the cap body 21 with the low melting point glass 24.
Because the affinity between the low melting point glass 24 and the oxide film is good,
The adhesion between the low melting point glass 24 and the cap body 21 is improved.

Next, after removing the oxide film other than the portion where the low melting point glass 24 is welded, a corrosion-resistant base plating film 23 is formed on the exposed surface of the cap body 21. The corrosion-resistant underlying plating film 23 is an electrolytic nickel plating film similar to that of the above-described embodiment. Then, a black nickel plating film 26 is formed on the corrosion-resistant base plating film 23 and the low-melting glass 24 in the same manner as in the above embodiment. Black nickel plating is performed by electrolytic black nickel plating, electrolytic tin-nickel plating, or the like. Also in the case of this embodiment, the corrosion-resistant underlying plating film 2
Since the black nickel plating film 26 is provided on the low melting point glass 3 and the low melting point glass 24, the generation of stray light can be effectively prevented as in the first embodiment. Also, the black nickel plating film 26 functions as a protective film for the low-melting glass 24 in the same manner.

[0012] Figure 3 shows an unusual such has a light transmitting window member with a laser device mounting device cap. Example of this, first, electrolytic nickel plating to the cap body 21, or electroless nickel - subjected to corrosion undercoat plating such phosphorus plating, after further subjected to black nickel plating, heat treatment to the product. The thickness of the corrosion-resistant base plating film 23 may be about 2 to 7 μm. As for the black nickel plating, electrolytic black nickel plating, electrolytic tin-nickel plating or the like can be used in the same manner as in the above embodiment. The thickness of the black nickel plating film 26 is 0.
About 1 to 1.0 μm is preferable.

In this example, the heat treatment is performed after the black nickel plating is performed. This is because the oxidizing gas containing water vapor is generated from the plating film when the laser element is heated after being mounted. The purpose is to prevent it.
Actually, heat treatment was performed at 150 ° C. for 60 minutes in the atmosphere.
By performing the heat treatment in this manner, generation of gas from the plating film can be prevented, and the reliability of the laser device mounting device can be improved. Note that this heat treatment is also effectively applied to the cap having the above-described light transmitting window. This Les chromatography The device mounting device cap also able to effectively prevent the occurrence of stray light by providing the black nickel plating film 26 on the surface of the cap as in the above embodiment.

The cap for the laser device mounting device shown in each of the above embodiments is not only a device for both light emission and light reception, but also
Needless to say, the present invention can also be used for a device dedicated to light projection and light reception. Further, the inner surface of the cap body 21 is not a mirror surface, but the surface can be made rough by satin processing or the like to further improve the light absorption.

[0015]

According to the present invention, there is provided a semiconductor device cap comprising:
As described above, the corrosion-resistant base plating provided on the cap body
Low melting point welding the outer surface of the film and the window for light transmission
Exposed surface of glass is deposited by black nickel plating
Covered with a black nickel plating film
Thus, light reflection can be prevented, stray light can be prevented as much as possible, and malfunctions and the like can be prevented. As a result of black nickel plating film deposited on the surface of the low melting point glass welding the light transmitting window member to the cap body so as to cover the permeable hole acts as a protective film of low-melting glass, low-melting glass
Long life semiconductor device cap with improved weather resistance
It has a significant effect such as being able to be provided as

[Brief description of the drawings]

FIG. 1 is a sectional view showing an embodiment of a cap for a laser device mounting apparatus.

FIG. 2 is a sectional view showing an embodiment of a cap for a laser device mounting apparatus.

FIG. 3 is a cross-sectional view illustrating an example of a cap for a laser element mounting device.

FIG. 4 is a sectional view of a conventional laser device mounting apparatus.

FIG. 5 is a sectional view of a conventional laser device mounting apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 21 Cap main body 22 Through-hole 23 Corrosion-resistant base plating film 24 Low-melting glass 25 Light transmission window 26 Black nickel plating film

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 23/04 G02B 5/00 H01L 23/02 H01L 31/0232 H01L 31/12

Claims (3)

(57) [Claims] A light-transmitting window is welded to the light-transmitting window with a low-melting glass containing a lead component so as to cover the light-transmitting hole, and a corrosion-resistant underlying plating film is formed on the cap body. Except for the surface of the light transmitting window body, the outside of the corrosion-resistant underlying plating film provided on the cap body
Site of the entire surface exposed to the parts, and before Symbol entire region exposed to the outside of the low-melting glass
But the semiconductor device cap, characterized in that the black nickel plating is covered with black nickel plating film deposited is subjected. 2. The cap for a semiconductor device according to claim 1, wherein the corrosion-resistant underlying plating film is an electrolytic nickel film, an electroless nickel film, an electrolytic nickel-phosphorous film, or an electrolytic nickel-boron film. 3. The cap for a semiconductor device according to claim 1, wherein the black nickel plating film is an electrolytic black nickel film or an electrolytic tin-nickel film.