JP3347564B2 - Processing jig and ion beam processing apparatus using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing jig for holding a plurality of thin-film magnetic heads for processing into a predetermined shape by irradiating an ion beam, and using this to arrange a thin-film magnetic head on a mounting table. Further, the present invention relates to an ion beam processing apparatus for processing into a predetermined shape by ion beam irradiation.

[0002]

2. Description of the Related Art Conventionally , in a processing step of a thin-film magnetic head, an ion beam processing apparatus which performs processing into a predetermined shape by irradiating an ion beam has been used.

As shown in FIG. 8, this ion beam processing apparatus has an ion beam generating unit 14 in which electrodes 12a and 12b are arranged vertically and magnets 13a and 13b are arranged left and right in a chamber chamber 21. And a processing unit 1 internally provided with a mounting table 16 for fixing the workpiece 30
Some chamber chambers 21 were provided with an exhaust port 22 for evacuating the chamber. In addition, cooling water is circulated on the mounting table 16 of the processing unit 15 in order to prevent the workpiece 30 from being heated to a high temperature due to the collision of the ion beam.

When the workpiece 30 is processed by the ion beam processing apparatus 25, a rectangular plate made of stainless steel as shown in FIG. 7 is used to prevent the mounting table 16 from being worn by the ion beam. The jig 101 was used.

For example, when the ion beam processing apparatus 25 is used to perform pattern processing or slider surface processing on a strip-shaped substrate in which a small substrate as a workpiece 30 forms a thin film magnetic head, the mounting surface of the processing jig 101 is set. after a strip-shaped substrate made of the resist film Al ₂ O ₃ -TiC based ceramic coated (not shown) was attached at the wax (wAX) or adhesive 101a, machining jig holding the workpiece 30 101 was fixed on the mounting table 16 of the sample chamber 15, and cooling water was circulated through the mounting table 16. Then, the inside of the chamber 21 is 10 ⁻² to 10 ⁻⁴ t.
orr vacuum, and then ion beam generator 14
Is supplied, and a magnetic field is formed by the magnets 13a and 13b, and an electric field is formed by the upper and lower electrodes 12a and 12b to control the trajectory of the Ar ion beam and to apply a voltage between the extraction electrode 11 and the mounting table 16. The Ar ion beam is applied to the mounting table 16
The processing is performed by colliding with the upper workpiece 30.

[0006]

However, the stainless steel processing jig 101 is significantly worn as compared with the Al ₂ O ₃ —TiC ceramic strip substrate as the workpiece 30. Could not be reused from. Moreover, stainless steel has a thermal conductivity of 16 W / mk.
Due to the low degree, the cooling air circulated through the mounting table 16 was quickly transmitted, and the processed surface of the workpiece 30 could not be sufficiently cooled. For this reason, there has been a problem that the resist film coated on the workpiece 30 is peeled off by the heat generated due to the collision of the Ar ion beam, so that it cannot be processed into a predetermined shape.

When the thickness of the processing jig 101 is reduced in order to increase the transmission efficiency of cold air, the flatness of the processing jig 101 is reduced due to the low hardness of stainless steel. It was not possible to machine with high precision on the order of submicron required for machining.

Further, in recent years, in order to improve the processing speed, R using a halogen-based corrosive gas such as F, Cl or I has been developed.
Although an IE apparatus has been proposed, the stainless steel forming the processing jig 101 is greatly corroded even by the corrosive gas and is worn away, so that the processing accuracy may be deteriorated.

[0009]

Means for Solving the Problems The present invention has been made in view of the above problems, a plurality of performing machining by irradiating a predetermined shape an ion beam
For processing for positioning and holding the thin film magnetic head
Alumina ceramics, sapphire, aluminum nitride having a thermal conductivity of not less than 20 W / mk and an etching rate by an Ar ion beam of not more than 1.2 μm / hr.
Ammonium ceramics, silicon carbide ceramics, Al
It is a more formed on either ₂ O ₃ -TiC based ceramic.

[0010] Further, the present invention provides a method for mounting a plurality of thin film magnetic
A head is arranged, and the thin-film magnetic head is irradiated with an ion beam.
Ion beam processing equipment
Heat to position and hold the thin-film magnetic head.
Conductivity of 20 W / mk or more and Ar ion beam
Whose etching rate is 1.2 μm / hr or less
Mina ceramics, sapphire, aluminum nitride
La mix, siliceous carbide ceramics, Al ₂ O ₃ -Ti
Ceramic processing treatment selected from C-based ceramics
For providing an ion beam processing apparatus comprising tools
It is.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below.

FIG. 1A is a perspective view showing a processing jig 1 according to the present invention, and FIG. 1B is an enlarged perspective view of a portion A of the processing jig 1.

As shown in FIGS. 1 (a) and 1 (b), a processing jig 1 according to the present invention has a rectangular plate-like body 2 formed to a size of about 80 mm × 80 mm × 2 mm. Surface 2
In a, a plurality of convex wall portions 3 are protruded at equal intervals, and the rectangular plate-shaped body 2 has a thermal conductivity of 20 W / mk or more and an etching rate by an Ar ion beam of 1.2 μm / hr or less. It is formed of ceramics.

Further, since the processing accuracy of the workpiece held on the mounting surface 2a is greatly affected by the dimensional accuracy of the processing jig 1, the flatness of the mounting surface 2a is 1 μm or less, and The parallelism is 5 μm or less.

FIG. 2 shows a state in which a small substrate as a workpiece 30 holds a strip-shaped substrate forming a thin-film magnetic head, and the processed surface is coated with a resist film (not shown).
_A strip-shaped substrate made of ₂ O ₃ —TiC-based ceramics is arranged and positioned between the convex wall portions 3 of the mounting surface 2 a, and is directly adhered and fixed to the mounting surface 2 a with wax (WAX).

Although FIGS. 1A and 1B show the processing jig 1 having a square plate shape, a plate-like body having any shape such as a disk shape may be used. . In addition, FIG.
Although the processing jig 1 shown in (b) has a projection wall portion 3 protruding therefrom, as another structure, a workpiece 30 is held on the surface of a square plate-like body 2 as shown in FIG. A plurality of grooves 4 may be formed in parallel, and the bottom surface of the grooves 4 may be the mounting surface 2a. Further, although not shown, the workpiece 30 is basically made of wax (WAX). ) Or the mounting surface 2a may be a flat surface in order to stick and hold it with an adhesive.

Next, FIG. 4 shows an ion beam processing apparatus 20 according to the present invention in which the processing jig 1 holding the workpiece 30 shown in FIG. The same parts as those in the conventional example are denoted by the same reference numerals.

An ion beam processing apparatus 20 according to the present invention
An ion beam generating unit 14 provided with electrodes 12a and 12b for forming an electric field vertically in a chamber 21 and magnets 13a and 13b for forming a magnetic field on the left and right; A processing unit 15 having a mounting table 16 for fixing the base 30 therein, and an exhaust port 22 for evacuating the inside of the chamber 21 by a vacuum pump (not shown). . The work piece 30 of Al ₂ O is placed on the mounting table 16.
A processing jig 1 holding a strip substrate made of _3- TiC-based ceramic is arranged. The mounting table 1 of the processing unit 15
In FIG. 6, cooling water is circulated to prevent the workpiece 30 from being heated to a high temperature due to the collision of the ion beam.

In order to process the workpiece 30 using the ion beam processing apparatus 20, cooling water is circulated through the mounting table 16 and the inside of the chamber 21 is sucked by a vacuum pump to 10 ⁻² to 10 ⁻² . A vacuum state of 10 ^-4 torr is set. Next, an Ar gas is supplied to the ion beam generator 14 as an ion beam source, a magnetic field is formed between the magnets 13a and 13b, and an electric field is formed between the electrodes 12a and 12b to control the trajectory of the Ar ion beam. By applying a voltage between the extraction electrode 11 and the mounting table 16, the Ar ion beam collides with the workpiece 30 on the mounting table 16 and is processed into a predetermined shape.

At this time, the processing jig 1 for holding the workpiece 30 is formed of ceramics having a thermal conductivity of 20 W / mk or more and an etching rate by an Ar ion beam of 1.2 μm / hr or less. Therefore, the cooling air circulated through the mounting table 16 is efficiently transmitted to the workpiece 30, and the processing surface of the workpiece 30 is heated to a high temperature by the collision of the Ar ion beam. Prevent,
Peeling of the resist film can be prevented. Moreover, A
The etching rate for the r ion beam is 1.2 μm /
hr or less and Al ₂ O ₃ —TiC constituting the workpiece 30
Since it is almost the same as the ceramics, it is hard to be worn and can be used repeatedly. Therefore, this processing jig 1
By using an ion beam processing apparatus using a laser beam, the workpiece 30 can be processed with high precision on the order of submicrons.

Incidentally, as the characteristics of the ceramics constituting the processing jig 1, the thermal conductivity is 20 W / mk or more, and the etching rate by the Ar ion beam is 1.
The reason why the heat conductivity is set to 2 μm / hr or less is that the thermal conductivity is 20 W / mk.
If the temperature is less than the predetermined value, the cool air from the mounting table 16 cannot be efficiently transmitted to the workpiece 30.
This is because the processed surface cannot be sufficiently cooled, and as a result, the resist film covering the processed surface is peeled off.

On the other hand, if the etching rate by the Ar ion beam is higher than 1.2 μm / hr, the life of the workpiece 30 is shortened because the workpiece 30 is worn before the Al ₂ O ₃ —TiC ceramics. This is because it becomes unusable by one processing.

The etching rate in the present invention is based on the value when a 1 keV Ar ion beam is irradiated in a vacuum atmosphere. Further, an element ion beam other than Ar may be irradiated as an ion beam source of the ion beam processing apparatus 20 of this type. However, even when another element ion beam is used, the degree of wear does not significantly change. Apply the above criteria.

Accordingly, the above-mentioned processing jig 1 can be suitably used in the ion beam processing apparatus 20 having different element ion beams to be irradiated, and the workpiece 30 can be processed with high accuracy on the order of submicrons. It is possible and can be used repeatedly.

Further, since the ceramics can be processed with extremely high dimensional accuracy and have high rigidity, even if the thickness of the processing jig 1 is reduced, the flatness of the mounting surface 2a and the parallelism of the upper and lower surfaces are obtained. Is not greatly impaired. For that reason,
The cooling efficiency of the workpiece 30 can be further improved.

As such ceramics, alumina ceramics, sapphire (Al ₂ O ₃ ), aluminum nitride ceramics (AlN), silicon carbide ceramics (SiC), and Al ₂ O ₃ —TiC ceramics can be used. it can.

FIG. 5 shows A of the above ceramics and stainless steel.
As shown in the etching rate by the r ion beam, the stainless steel constituting the conventional processing jig 101 has a large etching rate with respect to the Ar ion beam of 1.9 μm / hr and is easily worn, whereas the aluminum nitride ceramics ( AlN) and silicon carbide ceramics (SiC)
Is about 1.0 μm / hr, which is about 1/2 of abrasion of stainless steel, and alumina ceramics, sapphire (Al ₂ O ₃ ), and Al ₂ O ₃ —TiC ceramics have an etching rate of about 0.1. 8 μm
It can be seen that the wear rate can be greatly reduced to about / hr.
As shown in FIG. 6, the thermal conductivity of stainless steel is as small as about 16 W / mk, whereas that of stainless steel is alumina ceramic, sapphire (Al ₂ O ₃ ), and Al.
₂ O ₃ —TiC ceramics are as large as 25 to 42 W / mk, and silicon carbide ceramics (SiC) are 63 W / mk, and aluminum nitride ceramics (Al
N) has a very excellent thermal conductivity of 80 to 170 W / mk, and efficiently transmits cool air from the cooling means provided on the mounting table 16 to sufficiently process the processing surface of the workpiece 30. Can be cooled.

Further, the above ceramics include F, Cl, I
Since it is hardly corroded by halogen-based corrosive gases, it can be reused even if it is used in an RIE apparatus using the halogen-based corrosive gas in order to improve the processing speed.

On the other hand, to obtain these ceramics,
90% by weight as main raw material for alumina ceramics
As described above, preferably, MgO, CaO, and SiO ₂ are added as sintering aids in a total range of 10% by weight or less to Al ₂ O ₃ of 99.5% by weight or more and fired in an air atmosphere. Should be used. However, it is preferable not to add SiO ₂ because it is easily worn by an ion beam, but it is desirable to use one containing SiO ₂ in a range of 5% by weight or less.

In the case of silicon carbide ceramics, 90 to 98% by weight of SiC as a main raw material, 1 to 7% by weight of Al ₂ O ₃ as a sintering aid, and Y ₂ O ₃ and CeO ₂ in total. Whatever is added in the range of 1 to 5% by weight and fired in a vacuum or an inert gas atmosphere may be used.
Thus, sinterability can be increased and toughness can be improved by adding a sintering aid within the above range.

In the case of aluminum nitride ceramics, 91 to 99% by weight of AlN is used as a main raw material, and rare earth oxides such as Er ₂ O ₃ and Y ₂ O ₃ are used as a sintering aid in a total amount of 1 to 9%. Weight percent and fired in a vacuum or an inert gas atmosphere at a firing temperature of about 1700 to 1900 ° C., or Al having a purity of 99.9% or more.
2000 ° C only in vacuum or in an inert gas atmosphere
What is fired at a firing temperature of the order may be used.

In the case of Al ₂ O ₃ —TiC ceramics, 50 to 80% by weight of Al ₂ O ₃ and 20
What is necessary is to add and mix in a range of about 50% by weight, form into a predetermined shape, fire by hot pressing, and further perform HIP processing. In order to enhance sinterability, TiO ₂ , MgO, SiO ₂ , CaO, ZrO are used as sintering aids with respect to a total of 100% by weight of Al ₂ O ₃ and TiC.
₂ , one or more of Yb ₂ O ₃ may be contained in a range of 10% by weight or less, and in addition to the above components, rare earth oxides and unavoidable impurities may be contained in a range of a total of 5% by weight or less. good.

For sapphire, the EFG method, C
What is necessary is just to manufacture by the Z method, the Bernoulli method, etc., for example,
When formed by the EFG method, sapphire can be produced by melting high-purity alumina in an inert atmosphere, bringing a single crystal growing molybdenum die into contact with this alumina solution, and pulling up the molybdenum die.

As the ceramic constituting the processing jig 1, a semiconductive or conductive ceramic may be used.

That is, the workpiece 30 is easily charged by the irradiation of the ion beam, and as a result, the trajectory of the ion beam may be disturbed and the processing accuracy may be deteriorated. In the case of a head, a semiconductor device, or the like, a dielectric breakdown of a fine circuit pattern may occur.
By being formed of a ceramic having a semi-conductivity or conductivity of ⁷ Ω · cm or less, static electricity charged on the workpiece 30 is quickly released to prevent disturbance of the trajectory of the ion beam and dielectric breakdown of a fine circuit pattern. be able to.

In the above ceramics, Al ₂ O ₃ -T
iC ceramics have a volume resistivity of 2 to 5 × 10 ^-2.
Ω · cm itself has conductivity, and silicon carbide ceramics have a volume resistivity of 10 ³ to 8 × 10 ⁴ Ω · cm and have semiconductivity. The static electricity charged on the workpiece 30 can be efficiently released.

In the case of alumina ceramics or aluminum nitride ceramics having insulating properties, T
By adding a metal such as i, Cr, Mo, W, Co, Ni, Cu or an oxide thereof in a range of 0.1 to 10% by weight, semi-conductivity or conductivity can be imparted.

[0038]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A processing jig 1 according to the present invention and a conventional processing jig 101 are experimentally manufactured, and the life of the processing jigs 1 and 101 when the processing is performed using the jigs 1 and 101 and the workpiece 30 are reduced. Measurements were made as to whether or not the coated resist film was peeled off.

As the workpiece 30, a strip-shaped substrate made of an Al ₂ O ₃ —TiC-based ceramic whose small substrate forms a thin-film magnetic head was used, and a slider surface was processed by coating the processed surface with a resist film. .

Regarding the service life of the processing jigs 1 and 101,
The life was defined as the life when worn by 2 μm or more. The one that could be used 10 times or more before the life was evaluated as ○, the one that could not be used was evaluated as ×, and the resist film was not peeled. Was evaluated as ○, and what was peeled was evaluated as ×, and those satisfying both were evaluated as excellent.

The materials constituting the processing jigs 1 and 101 and the results thereof are as shown in Table 1.

[0042]

[Table 1]

As a result, as shown in FIG. 5, the conventional processing jig 101 made of stainless steel wears out in a short time because the etching rate with respect to the Ar ion beam is greater than 1.2 μm / hr. Could not be used more than once. Moreover, a stainless steel processing jig 1
No. 01 has a small thermal conductivity of about 16 W / mk as shown in FIG.

On the other hand, the alumina ceramics, silicon carbide ceramics, Al ₂ O ₃ —Ti
C-based ceramics, aluminum nitride ceramics,
5 and FIG. 6, the processing jig 1 made of sapphire has an etching rate with respect to an Ar ion beam of 1.2 μm / hr or less and a thermal conductivity of 20 W / mk or more. The wear by the Ar ion beam was small, and as a result, as shown in Table 1, it could be used repeatedly 10 times or more, and the resist film was excellent without any peeling of the resist film.

[0045]

As described above, according to the present invention, the processing jig is formed of ceramics having a thermal conductivity of 20 W / mk or more and an etching rate by an Ar ion beam of 1.2 μm / hr or less. By doing so, it is possible to reduce the wall thickness while maintaining high dimensional accuracy, and because of its high thermal conductivity, efficiently transmit cold air from the cooling means equipped with the mounting table to the workpiece However, it is possible to prevent the processing surface from being heated to a high temperature due to the irradiation of the ion beam, thereby preventing the resist film from being peeled off, and to prevent the ion beam such as Ar ions from being worn away. A possible processing jig can be provided.

Further, by making the ceramic constituting the processing jig semiconductive or conductive, static electricity charged on the processing surface of the workpiece due to the irradiation of the ion beam can be efficiently released. Therefore, it is possible to prevent inconveniences such as disturbance of the trajectory of the ion beam due to the electrostatic charge and dielectric breakdown of a fine circuit pattern.

Further, according to the present invention, a workpiece is arranged on a mounting table of an ion beam processing apparatus via the processing jig, and the workpiece is irradiated with an ion beam to be processed into a predetermined shape. Therefore, the resist film covering the processing surface of the workpiece does not peel off, and the processing can be performed with high precision on the order of submicrons.

[Brief description of the drawings]

FIG. 1A is a perspective view showing a processing jig according to the present invention, and FIG. 1B is an enlarged perspective view of a portion A thereof.

FIG. 2 is a perspective view showing a state in which a workpiece is held using a processing jig according to the present invention.

FIG. 3 is a perspective view showing another processing jig according to the present invention.

FIG. 4 is a schematic view showing an ion beam processing apparatus according to the present invention.

FIG. 5 is a graph showing the degree of wear of a material constituting a processing jig of the present invention and a conventional processing jig by Ar ion beam irradiation.

FIG. 6 is a graph showing the thermal conductivity of the material constituting the processing jig of the present invention and the conventional processing jig.

FIG. 7 is a perspective view showing a state where a workpiece is held by a conventional processing jig.

FIG. 8 is a schematic view showing a conventional ion beam processing apparatus.

[Explanation of symbols]

1: Processing jig, 2: Square plate, 3: Convex wall, 1
1: Leader electrode, 12a, 12b: Electrode, 13a, 13b:
Magnet, 14: Ion beam generating part 15: Processing part,
16: mounting table, 20: ion processing equipment, 21: chamber

Claims (2)

(57) [Claims] 1. A processing jig for positioning and holding a plurality of thin film magnetic heads for processing into a predetermined shape by irradiating an ion beam, the jig having a thermal conductivity of 20 W /
alumina ceramic having an etching rate of not less than mk and not more than 1.2 μm / hr by an Ar ion beam
Steel, sapphire, aluminum nitride ceramics, charcoal
Silicon ceramics of, Al ₂ O ₃ -TiC based ceramic
A processing jig formed by any of the following methods. 2. A plurality of thin-film magnetic heads are arranged on a mounting table,
In the ion beam processing apparatus for performing processing into a predetermined shape by irradiating the ion beam to the thin film magnetic head, the thin film magnetic
Thermal conductivity in order to hold the position the care head is 20W /
alumina ceramic having an etching rate of not less than mk and not more than 1.2 μm / hr by an Ar ion beam
Steel, sapphire, aluminum nitride ceramics, charcoal
Silicon ceramics of, Al ₂ O ₃ -TiC based ceramic
An ion beam processing apparatus comprising a ceramic processing jig selected from the group consisting of: