JP3348223B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing method and a substrate processing apparatus, and more particularly to a substrate processing method for performing various processes such as thin film formation, etching, and pattern baking on a substrate surface.
The present invention relates to a method and a substrate processing apparatus.

[0002]

2. Description of the Related Art FIG. 2 shows an example of a substrate processing apparatus, which comprises a processing chamber 1 and a substrate exchange chamber 3 connected to the processing chamber 1 via a gate valve 2. Have been. In such a substrate processing apparatus, a reaction gas or a purge gas is introduced into a processing chamber 1 from a gas inlet 5 while holding a substrate P in a substrate holding unit 4 provided in the processing chamber 1 to perform various predetermined processing. After that, the gate valve 2 is opened to move the processed substrate into the substrate exchange chamber 3, and then the substrate exchange chamber 3
The unprocessed substrate prepared in advance is moved into the processing chamber 1,
Various processing is again performed on this substrate. The means for moving the substrate P is omitted.

[0003] At this time, if the various gases supplied into the processing chamber 1 contain particles, the substrate P is deteriorated and the desired performance cannot be obtained. For this reason, conventionally, strict particle countermeasures such as reducing the amount of particles in various gases introduced into the processing chamber 1 to an extremely small amount and minimizing the generation of particles in the gas flow path have been known. Had gone.

[0004]

However, it is extremely difficult to completely prevent the generation of particles. Even if a small amount of particles are generated during processing or moving the substrate, if the particles adhere to the substrate. In addition, the substrate may be deteriorated. That is, conventionally, various measures have been taken to reduce particles, but no measures have been taken when particles are generated.

Accordingly, the present invention provides a substrate processing method and a substrate processing apparatus which can prevent the generated particles from adhering to the substrate even if the particles are generated during the substrate processing and can improve the yield in various types of substrate processing. It is intended to provide.

[0006]

In order to achieve the above object, a substrate processing method according to the present invention comprises forming a thin film on a substrate surface;
In a substrate processing method for performing various kinds of processing such as etching and pattern printing , a grounding substrate processing apparatus has a processing chamber.
Tikuru fixedly insulating member for electrostatically attracting the substrate processing
Particles generated inside are electrostatically attracted to the insulating member.
The substrate processing apparatus is characterized in that
Various processes such as thin film formation, etching, and pattern baking
In a substrate processing apparatus that performs processing, it is assumed that the apparatus is grounded.
In the processing chamber of the substrate processing equipment,
An insulating member that electrostatically attracts the particles
It is characterized by being fixed oppositely .

[0007]

According to the work for-described structure, the particles in the substrate processing chamber is attracted to the insulating member by the action of static electricity, groups during processing
Possible to prevent particles to stick to a plate surface. In particular, since is provided an insulating member in a processing chamber, electrostatic pressure is increased by contact with the reactive gas and the purge gas flowing through the processing chamber, the suction effect of the particles is increased.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail based on an embodiment shown in FIG. FIG. 1 shows an embodiment in which the present invention is applied to a substrate processing apparatus similar to that shown in FIG.

In this substrate processing apparatus, a substrate exchange chamber 13 is connected to a processing chamber 11 via a gate valve 12 in the same manner as described above. A holding table 14 is provided. The process of forming a thin film on the surface of the substrate P is performed by heating the substrate P to a predetermined temperature by a heating device (not shown) and introducing a reaction gas of a predetermined component into the processing chamber 11 from the reaction gas inlet 15. . The exhaust gas after the reaction is exhausted from the exhaust pipe 16 on the gate valve 12 side.

In this embodiment, the processing chamber 11 and the substrate holder 14 are grounded via ground wires 17 and 18, respectively, and a plate-shaped insulating material is provided at a position facing the processing surface of the substrate P. A member 21 is provided. The insulating member 21 can be made of various materials as long as it is an arbitrary electric non-conductor and does not itself generate particles. For example, quartz glass, boron nitride, or the like can be used. , Barium titanate, lead titanate zirconia and the like can be appropriately selected and used,
Further, those obtained by coating these on the surface of an arbitrary substrate can also be used.

Although the means for installing the insulating member 21 in the processing chamber 11 is arbitrary, the insulating member 21 can be provided by, for example, a hanging member 22 as shown in FIG. The suspension member 22 is formed by connecting a metal bar and a bar made of an insulating material by screw connection or the like. The metal bar is fixed to the inner wall of the processing chamber 11 by welding or the like. The insulating member 21 is fixed in the processing chamber 11 by fixing a rod made of an insulating material to the upper surface of the insulating member 21 by bonding or the like.

As described above, if the insulating member 21 is provided so as to face the processing surface of the substrate P in the processing chamber 11, static electricity is generated on the surface of the insulating member 21 even if the insulating member 21 is kept as it is.
Higher static electricity is generated on the surface of the insulating member 21 due to the contact with the gas flow in the processing chamber 11, and particles flowing into the processing chamber 11 during the processing cause the insulating member 2
Adsorb to 1. Accordingly, it is possible to prevent the particles from adhering to the surface of the substrate P during the processing and deteriorating the substrate P.

The insulating member 21 is provided in the processing chamber 11.
In addition , for example, as shown by an imaginary line in FIG. 1, an insulating member 23 is provided in the substrate exchange chamber 13 and an insulating member is also provided in an appropriate portion of the substrate transfer section, so that the It is possible to prevent particles from adhering to the substrate P during the movement of the substrate.

In this embodiment, an apparatus for forming a semiconductor thin film is described as a substrate processing apparatus. However, the present invention can be similarly applied to a substrate processing apparatus for performing various processes such as etching and pattern printing. .

[0015]

As described above, the substrate processing of the present invention is performed.
According to the method and the apparatus, since the whole substrate processing apparatus is grounded and an insulating member for electrostatically adsorbing particles is fixed in the substrate processing chamber, particles generated during the substrate processing are provided.
The complex can be adsorbed on the insulating member by the action of static electricity, the particles can be prevented from degrading the substrate adhering to the substrate. Therefore, a high-quality processing substrate can be efficiently manufactured.

[Brief description of the drawings]

FIG. 1 is a sectional view of a substrate processing apparatus showing one embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating an example of a conventional substrate processing apparatus.

[Explanation of symbols]

11: processing chamber, 13: substrate exchange chamber, 14: substrate holding table,
17, 18: ground wire, 21, 23: insulating member, P: substrate

──────────────────────────────────────────────────続 き Continuation of front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/304 646 H01L 21/205 H01L 21/3065 B08B 6/00

Claims (2)

(57) [Claims] A substrate processing method for performing various processes such as thin film formation, etching, and pattern baking on a substrate surface ,
Particles are electrostatically charged in the processing chamber of the grounded substrate processing equipment.
An insulating member that adsorbs is fixed, and the parts generated during substrate processing are removed.
A substrate processing method comprising: removing a ticule by electrostatically adsorbing the insulating member . 2. A method for forming a thin film, etching, and patterning on a substrate surface.
In substrate processing equipment that performs various processes such as baking,
While the apparatus is grounded, the processing chamber of the substrate processing apparatus
Electrostatically attracts particles generated during substrate processing
The insulation member is fixed facing the front substrate surface.
Substrate processing equipment .