JP3350414B2 - Filter circuit - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is suitably used as a band-pass filter in an infrared remote control device or a receiver of a free-space optical transmission device, and generates transconductance for generating an output current having an amplitude proportional to the amplitude of an input voltage. The present invention relates to a filter circuit using an amplifier.

[0002]

2. Description of the Related Art The transconductance amplifier includes:
The peak frequency, the gain, and the like can be changed relatively easily, and are integrated using bipolar transistors, and are widely used, particularly in the field of infrared data communication. The infrared data communication is used in a so-called infrared remote controller, a personal computer and its peripheral devices, which are widely used in home electric appliances, and IrDA 1.0, 1.1 which is a unified standard by the infrared data council.
And the like.

FIG. 4 is an equivalent circuit block diagram of a receiver 1 of a general infrared remote controller. The infrared signal from the transmitter is usually a signal that is intensity-modulated at 38 kHz and further coded with the presence or absence of a carrier (38 kHz), and is photoelectrically converted by the light receiving element 2 realized by a photodiode or the like. Is entered. The received signal amplified by the amplifier 3 is input to a band-pass filter 4 having a center frequency fo of 38 kHz, and only a carrier frequency component is extracted. The output from the band-pass filter 4 is held at a peak value in a peak hold circuit 5, and a predetermined divided level of the held value is input to the inverting input terminal of the comparator 6 as a detection level. The comparator 6 discriminates the output from the band-pass filter 4 input to the non-inverting input terminal by the detection level,
Thus, the presence or absence of the carrier is detected, and the result of the discrimination is shaped by the integrating circuit 7 and the hysteresis comparator 8, output to the output terminal 9 as an output signal Vo, and given to an operation control microcontroller or the like.

FIG. 5 is a block diagram showing a schematic configuration of a general band-pass filter 4 used in a receiver of the infrared remote controller as described above. The bandpass filter 4 is connected to the transconductance amplifier 11,
12, buffers 13, 14 and capacitors 15, 16
It is comprised including. This bandpass filter 4
Here, the transconductances of the transconductance amplifiers 11 and 12 are gm1 and gm2, the capacitances of the capacitors 15 and 16 are C1 and C2, respectively, and the currents flowing through the capacitors 15 and 16 are i.
1, io, the transfer function between the input signal vi applied to the input terminal 17 and the output signal vo output to the output terminal 18 is

[0005]

(Equation 1)

[0006] Here, S is a Laplace operator, and S = jω. Also, the center frequency fo is

[0007]

(Equation 2)

## EQU1 ##

Therefore, the transconductance gm
By changing 1, gm2, the center frequency fo can be arbitrarily set.

On the other hand, the transconductance amplifiers 11 and 12 are specifically configured, for example, as shown in FIG. FIG. 6 is an electric circuit diagram of a general transconductance amplifier 20. The transconductance amplifier 20 includes a first-stage differential input circuit 21
And a second-stage differential input circuit 22 and an output circuit 23.

The differential input circuit 21 has input terminals n1, n2
Transistors Q1 and Q4 to which input signals are respectively applied to the transistors Q1 and Q4, and transistors Q1 and Q4 to which the outputs of the transistors Q1 and Q4 are respectively applied to form a differential pair.
2, Q3, and load diodes D1, D2 provided in connection with the transistors Q2, Q3, respectively.
A resistor RE interposed between the emitters of the transistors Q2 and Q3, constant current sources F1 and F4 for supplying a constant current I to the transistors Q1 and Q4, and a constant current for supplying a constant current I1 to the transistors Q2 and Q3, respectively. Current source F
2 and F3.

When a differential input of the potential difference Vin is applied to the input terminals n1 and n2, and the current flowing through the diodes D1 and D2 changes by Δi to become I1 + Δi and I1-Δi, respectively, the voltage drop at the diodes D1 and D2 Are VD1 and VD2, respectively.

[0013]

(Equation 3)

[0014]

(Equation 4)

Can be represented by Here, VT is the thermal voltage of the transistors Q2 and Q3, and Is is the reverse saturation current.

The differential input circuit 22 receives the collector voltages of the transistors Q2 and Q3 as inputs and forms transistors Q5 and Q6 forming a differential pair without the emitter-to-emitter resistor RE.
5, a constant current source F for supplying the constant current I to Q6, respectively.
5, F6, and a constant current source F7 for extracting a predetermined constant current I2 from the emitters of the transistors Q5, Q6.

The transistor Q due to the change of the current Δi
5 and the collector current of Q6 are I2 / 2 + ΔI,
When I2−ΔI,

[0018]

(Equation 5)

Is obtained. Therefore,

[0020]

(Equation 6)

From

[0022]

(Equation 7)

Is obtained.

The output circuit 23 has a reference voltage Vre
f is provided, and the transistor Q
5, currents I- (I2 / 2 + ΔI) and I- (I
2 / 2−ΔI)
7, Q8, transistors Q9, Q10 forming a current mirror circuit, and resistors r1, r having the same resistance value.
2 is provided.

Here, the relationship between the potential difference Vin of the input and the difference Δi of the current flowing through the transistors Q2 and Q3 of the differential pair is as follows.

[0026]

(Equation 8)

Therefore, from the collector side of the transistor Q10 of the output circuit 23, the output terminal n
3 is the sum of the collector current of the transistor Q8 and the inverted value of the collector current of the transistor Q7.

[0028]

(Equation 9)

## EQU1 ##

Therefore, the transconductance gm
Is

[0031]

(Equation 10)

Can be represented by

Therefore, the transconductances gm1 and gm2 of the transconductance amplifiers 11 and 12 in FIG. 5 are set to gm1 = gm2 = gm, and
Is substituted into the above equation 2,

[0034]

[Equation 11]

From

[0036]

(Equation 12)

Thus, it is understood that the center frequency fo of the band-pass filter 4 can be changed by adjusting the currents I1 and I2.

FIG. 7 shows the transconductance amplifier 20 as described above and the transconductance amplifier 2
FIG. 2 is an electrical circuit diagram showing a combination of a typical prior art bias circuit 30 defining the currents I1 and I2 at zero. In FIG. 7, the constant current source F1 includes a transistor Q11 and a resistor r11. Similarly, the constant current source F2 includes a transistor Q12 and a resistor r12.
The constant current source F3 is composed of the transistor Q13 and the resistor r13.
The constant current source F4 is a transistor Q14 and a resistor r14, the constant current source F5 is a transistor Q15 and a resistor r15, the constant current source F6 is a transistor Q16 and a resistor r16, and the constant current source F7 is a transistor Q17 and a resistor r17. , Respectively.

The transistor Q1 for defining the current I
1, Q14, Q15 and Q16 are all bias circuits 3
0 to form a current mirror circuit with these transistors Q11, Q14, Q1.
5, Q16; Q31 have the same emitter area ratio. Further, a resistor r31 provided in connection with the transistor Q31 and the resistors r11 and r1 are provided.
4, r15, and r16 have the same resistance value. The collector current of the transistor Q31 is defined by the constant current source F31 to the current I. Therefore, the transistors Q11, Q14, Q15, Q1
The currents flowing through 6 are both I. This current I does not appear in Equation 12 above, that is, has little effect on the center frequency fo.

On the other hand, the transistors Q12 and Q13 for supplying the current I1 constitute a current mirror circuit with the transistor Q32 of the bias circuit 30.
The emitter of the transistor Q32 is grounded via a resistor r32, and the collector is connected to a power supply line 31 of a high-level power supply voltage Vcc via a resistor Rh. The base of the transistor Q32 is connected to the emitter of the transistor Q33, and the collector is connected to the base of the transistor Q33.
3 is connected to the power supply line 31.

Therefore, assuming that the emitter area ratio between the transistor Q32 and the transistors Q12 and Q13 is equal, the resistance value between the resistor r32 and the resistors r12 and r13 is equal and sufficiently smaller than the resistance Rh, the current I1 Is as follows: I1 = (Vcc−2VBE) / Rh (13) Note that the base-emitter voltages of the transistors Q32 and Q33 are equal to VBE.

Therefore, from the above equation 13, the current I1 changes in proportion to the power supply voltage Vcc.

Similarly, the transistor Q17 for supplying the current I2 forms a current mirror circuit with the transistor Q34 of the bias circuit 30. The emitter of the transistor Q34 is grounded via a resistor r33, and the collector is connected to the power supply line 31 via a resistor Rfo. The transistor Q34
Is connected to the emitter of the transistor Q35, the collector is connected to the base of the transistor Q35, and the collector of the transistor Q35 is connected to the power supply line 31.

Therefore, assuming that the emitter area ratios of the transistor Q34 and the transistor Q17 are equal to each other and the resistance values of the resistor r33 and the resistor r17 are equal to each other, the current I2 also becomes I2 = (Vcc-2VBE) / Rfo (14), which is proportional to the power supply voltage Vcc. In addition,
The base-emitter voltage of the transistors Q34 and Q35 is VBE.

By substituting Equations 13 and 14 into Equation 10, the following can be obtained:

[0046]

(Equation 13)

Is as follows. Here, when RE≫VT × Rh / (Vcc−2VBE) (16)

[0048]

[Equation 14]

Can be approximated. Therefore, a resistor having the same temperature coefficient is used for the resistor RE and the resistor Rh,
By making the resistor Rfo an external resistor having a small temperature coefficient, the temperature characteristics of the transconductance gm can be minimized, and the fluctuation of the center frequency fo can be suppressed.

[0050]

However, when Equation 16 is not satisfied, the transconductance g
m depends on the power supply voltage Vcc, and from Equation 15, the center frequency fo follows the fluctuation of the power supply voltage Vcc.

On the other hand, the mounting of the infrared communication device on the personal computer and its peripheral devices has further progressed, and it is desired to share the power supply voltage with various power supply voltages, for example, 5V and 3V. However, as described above, the center frequency f
If o fluctuates according to the power supply voltage Vcc, there is a problem that it cannot be shared.

An object of the present invention is to provide a versatile filter circuit which can cope with various power supply voltages.

[0053]

According to a first aspect of the present invention, there is provided a filter circuit including a transconductance amplifier, wherein a bias current is supplied to the transconductance amplifier by a bias circuit including a band gap current source . The bias circuit is
The bandgap current source is used as the reference current source and the emitter resistor
The current mirror circuit with an arbitrarily set resistance value
Number of differential pairs, the first differential pair
A first constant current respectively supplied to the two transistors;
When a second constant current drawn from the second differential pair is supplied,
In both cases, one end of the band gap current source is a diode.
From a connected first transistor through a first resistor
Connected to a high-level power supply line.
An end is grounded, and the first transistor and the capacitor are connected to each other.
The emitter of the second transistor forming the rent mirror circuit
Is connected to the power supply line via a second resistor,
The first transistor and the current mirror circuit are configured.
The emitter of the third transistor is connected via a third resistor.
Connected to the power line and the band gap
The reference current flowing through the current source is the first, second, and third
Folded according to the emitter area ratio in the transistor,
The first and second constant currents are respectively created .

According to the above arrangement, the current source is
Since the current source is a gap current source, the currents I1 and I2 in Equation 12 do not depend on the power supply voltage Vcc,
The transconductance gm and thus the center frequency f
It is possible to cope with different power supply voltages while o is kept constant, so that versatility can be expanded.

[0055] Furthermore, the filter circuit, the bias circuit, said a band gap current source reference current source, the current mirror circuit which is arbitrarily set the emitter resistance value, each specific constant into a plurality of differential pairs Runode to supply current, transconductance gm, thus the current that determines the center frequency fo I1, I2
Can be set to an arbitrary value that can obtain a desired transconductance, and the versatility with respect to the power supply voltage can be increased, and the applicable frequency can be increased.

A filter circuit according to a second aspect of the present invention.
Is arranged between the two transistors constituting the first differential pair.
The added resistor and the second resistor have a transistor and
It is characterized in that resistors having the same temperature characteristics are used.

Therefore, the third resistor has a small temperature characteristic.
By using external resistors,
It is possible to reduce the temperature dependency of the gm. Ma
In addition, the dependency on the power supply voltage can be minimized.
The use of such a bias circuit allows
Filter circuit is versatile for multiple power supply voltages
Things.

The filter circuit according to the third aspect of the present invention.
Are the emitters of said first, second and third transistors
By adjusting the area ratio, the first and second constants are adjusted.
The current is set to a value where the center frequency can be obtained
It is characterized by being.

Therefore, the versatility with respect to the power supply voltage is expanded.
At the same time, the applicable frequency can be expanded.

[0060]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described.
The following is a description based on FIGS. 1 to 3.

FIG. 1 is a block diagram showing a schematic configuration of an embodiment of the present invention. FIG. 1 shows an example in which the present invention is applied to the bandpass filter 4 shown in FIG.
It should be noted in the present invention that in a filter circuit including a transconductance amplifier such as the bandpass filter 4 shown in FIG. 5, a bias current to the transconductance amplifier is controlled by a bias circuit including a current source independent of a power supply voltage. 40.

FIG. 2 is an electric circuit diagram showing a specific configuration of the present invention in which the bias circuit 40 is applied to the transconductance amplifiers 20 constituting the transconductance amplifiers 11 and 12. The transconductance amplifier 20 used in the configuration shown in FIG.
This is the general transconductance amplifier 20 shown in FIG. 6 described above. Corresponding portions are denoted by the same reference characters, and description thereof will be omitted.

In the bias circuit 40, the constant current source F31 of the bias circuit 30 and the transistor Q31
Like the resistor r31 and the constant current source F41, the transistor Q41 and the resistor r41, the transistor Q
The current I supplied from 11, Q14, Q15, Q16 is defined. The current I1 flowing through the transistors Q12 and Q13 is controlled by the transistors Q45 and Q46 and the resistor r42, which are similar to the transistors Q32 and Q33 and the resistor r32. Similarly, the current I2 flowing through the transistor Q17 is equal to the current I3 flowing through the transistor Q3.
4, Q35 and a transistor Q4 similar to the resistor r33.
7, Q48 and resistor r43.

It should be noted that in the bias circuit 40, a band gap current source 41 is provided, and the reference current Io flowing through the band gap current source 41 is reduced from the transistor Q42 to the transistor Q43, Q44 by the emitter area ratio. The constant current I which is folded back and flows through the collectors of the transistors Q45 and Q47, respectively
1, I2 is created.

One end of the band gap current source 41 is connected to a resistor Ro from a diode-connected transistor Q42.
Through a power supply line 4 of a high level power supply voltage Vcc.
2 and the other end is grounded. The emitter of the transistor Q43 forming a current mirror circuit with the transistor Q42 is connected to the power supply line 42 via the resistor Rh, and the collector is connected to the collector of the transistor Q45 and the base of the transistor Q46. Similarly, the emitter of the transistor Q44 forming a current mirror circuit with the transistor Q42 is connected to the power supply line 42 via the resistor Rfo.
And the collector is connected to the collector of the transistor Q47 and the base of the transistor Q48.

FIG. 3 is an electric circuit diagram showing a specific configuration of the bandgap current source 41. The band gap current source 41 includes biasing transistors Q51 and Q51.
52, resistors R51, R52 and a capacitor C, and transistors Q53, Q54, Q55, Q for creating a constant current.
56, Q57 and resistors R53, R54, R55, R5
6, and output transistors Q58, Q59, Q60,
Q61 and resistors R57, R58, R59.

The emitter area ratio of the transistors Q55 and Q56 forming the current mirror circuit is
The resistances of the resistors R55 and R56 are formed to be equal to each other. Therefore, the collector currents Ic of the transistors Q53 and Q54 are equal to each other.

On the other hand, the transistor Q53 and the transistor Q54 forming a pair satisfy the following expression: VBE53 = VBE54 + VR54 (18) However, VBE53 and VBE54 are the base-emitter voltages of the transistors Q53 and Q54, respectively, and VR54 is the voltage drop due to the resistor R54. Further, the thermal voltage VT of the transistors Q53 and Q54
And the reverse saturation current Is equal,

[0069]

(Equation 15)

From the above,

[0071]

(Equation 16)

Therefore,

[0073]

[Equation 17]

Is obtained.

Therefore, the band gap current source 41
Is independent of the power supply voltage Vcc, and the temperature coefficient is proportional to the thermal voltage VT. Therefore, by setting the resistances RE and Rh in the transconductance amplifier 20 to have the same temperature coefficient as the thermal voltage VT of the transistors Q53 and Q54, the transconductance amplifier 20
Temperature coefficient of the gain can be reduced.

The collector current Ic is taken out by a transistor Q58 forming a current mirror circuit with the transistor Q56, and the transistors Q59 to Q61
The direction of the extracted current is converted and output as the reference current Io.

Therefore, in FIG.
In the current mirror circuit including the transistor Q42, the resistor Rh and the transistor Q43, the relationship between the reference current Io and the current I1 is determined by setting the base-emitter voltages of the transistors Q42 and Q43 to V
BE42 and VBE43, and their thermal voltages are equal to V
When T is the same and the reverse saturation current is also equal to Is, IoRo + VBE42 = I1Rh + VBE43 (22)

[0078]

(Equation 18)

And thus,

[0080]

[Equation 19]

Can be represented by

Here, approximately, VBE42 ≒ VBE43
Then, from the equation 22, IoRo ≒ I1Rh (25), and I1 ≒ (Ro / Rh) Io (26).

Therefore, since the reference current Io has no dependency on the power supply voltage Vcc as described above, the current I1 also has no dependency on the power supply voltage Vcc and is a constant current.

Similarly, a resistor Ro and a transistor Q4
In the current mirror circuit including the resistor Rfo and the resistor Rfo and the transistor Q44, the relation between the reference current Io and the current I2 is as follows: when the base-emitter voltage of the transistor Q44 is VBE44, IoRo + VBE42 = I2Rfo + VBE44 (27) ,

[0085]

(Equation 20)

And thus,

[0087]

(Equation 21)

Can be represented by

Approximately, assuming that VBE42 ≒ VBE44, from the above equation 27, from IoRo ≒ I2Rfo (30), I2 ≒ (Ro / Rfo) Io (31), and the current I2 also depends on the power supply voltage Vcc. No constant current and constant current.

Therefore, when Equations 26 and 31 are substituted into Equation 10 above,

[0091]

(Equation 22)

When the transconductance amplifiers 11 and 12 in FIG. 1 are realized by an integrated circuit, the resistances Rh and RE have good matching with the integrated circuit.
And use a resistor with the same temperature characteristics as the transistor,
By using an external resistor having a small temperature characteristic for the resistor Rfo, the temperature dependence of the transconductance gm can be reduced. Further, the dependency on the power supply voltage Vcc can be minimized, and by using such a bias circuit 40, the bandpass filter 4 can be made versatile for a plurality of power supply voltages. it can.

Further, transistors Q42 and Q4
3, by adjusting the emitter area ratio of Q44,
The currents I1 and I2 can be set to any values that can obtain a desired transconductance, and thus a center frequency, and the versatility with respect to the power supply voltage can be expanded, as well as the applicable frequency.

The present invention is not limited to bandpass filters,
It can be applied to other types of filters using a transconductance amplifier.

[0095]

According to the first aspect of the present invention, there is provided a filter circuit comprising:
As described above, the transconductance amplifier, van
A bias current supplied from the bias circuit comprising the-gap current source, the bias circuit, the bandgap
The current source is used as the reference current source, and the emitter resistance can be set arbitrarily
The current mirror circuit into multiple differential pairs.
Each of the transistors of the first differential pair is used as a specific constant current.
And the first constant current respectively supplied to the second differential pair.
And a second constant current to be cut out.
One end of the gap current source is a diode-connected
High-level power from one transistor via the first resistor
Connected to the power supply line of the source voltage, and the other end is grounded.
Connecting the first transistor and the current mirror circuit.
The emitter of the second transistor is connected through a second resistor.
And connected to the power supply line and the first transistor
And the third transistor constituting the current mirror circuit
The emitter of the power supply is connected to the power supply line via a third resistor.
A reference flowing through the bandgap current source
A current flows through the first, second and third transistors.
Folded back in accordance with the area ratio of the
And a second constant current.

Therefore, it is possible to cope with different power supply voltages while keeping the transconductance, that is, the center frequency constant, and expand the versatility. Further
, The transconductance, and hence the bias current for determining the center frequency, desired that can be set to any value, with the expansion of versatility with respect to the power supply voltage, applied frequency also can be increased.

The filter circuit according to the second aspect of the present invention comprises:
As described above, both transistors forming the first differential pair
A resistor disposed between the second resistor and the second resistor
Use resistors with the same temperature characteristics as the resistors.

Therefore, the third resistor has a small temperature characteristic.
By using external resistors,
It is possible to reduce the temperature dependency of the gm. Ma
In addition, the dependency on the power supply voltage can be minimized.
The use of such a bias circuit allows
The filter circuit, that having a versatility for a plurality of power supply voltages
Things.

The filter circuit according to the third aspect of the present invention comprises:
As above, the first, second and third transistors
By adjusting the emitter area ratio, the first and the second
And the second constant current are set to values that can obtain the center frequency.
Is defined.

Therefore, the versatility with respect to the power supply voltage is expanded.
At the same time, the applicable frequency can be expanded.

[Brief description of the drawings]

FIG. 1 is a block diagram showing a schematic configuration of an embodiment of the present invention.

FIG. 2 is an electric circuit diagram showing a specific configuration of a transconductance amplifier and a bias circuit thereof in FIG.

FIG. 3 is an electric circuit diagram showing a specific configuration of a bandgap current source in FIG. 2;

FIG. 4 is an equivalent circuit block diagram showing an electrical configuration of a general infrared remote control receiver.

FIG. 5 is a block diagram showing a schematic configuration of a general band-pass filter used for the receiver of the infrared remote controller shown in FIG. 4;

6 is an electric circuit diagram showing a specific configuration of a general transconductance amplifier used for the bandpass filter shown in FIG.

FIG. 7 shows a transconductance amplifier shown in FIG.
1 is an electrical circuit diagram of a configuration with a typical prior art bias circuit.

[Explanation of symbols]

Reference Signs List 1 receiver 2 light receiving element 3 amplifier 4 band pass filter 5 peak hold circuit 6 comparator 7 integration circuit 8 hysteresis comparator 11, 12; 20 transconductance amplifier 13, 14 buffer 15, 16 capacitor 21, 22 differential input circuit 23 output circuit 40 Bias circuit 41 Band gap current source (current source independent of power supply voltage) RE resistance Rfo resistance (third resistance) Rh resistance (second resistance) Ro resistance (first resistance) Q2 · Q3 transistor (first differential pair) ) Q5 / Q6 transistor (second differential pair) Q42 transistor (first transistor) Q43 transistor (second transistor) Q44 transistor (third transistor)

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H03H 11/12

Claims (3)

(57) [Claims] 1. A filter circuit comprising a transconductance amplifier, wherein the transconductance amplifier has a band gap
A bias current is supplied by a bias circuit having a current source , and the bias circuit uses the band gap current source as a reference current source and a current mirror circuit in which an emitter resistance value is arbitrarily set. As a constant current to both transistors of the first differential pair.
The first constant current supplied and the second constant current drawn from the second differential pair.
2 and one end of the bandgap current source is connected to a diode.
From the first transistor connected through the first resistor.
Level power supply voltage, and the other end
The first transistor and the current
The emitter of the second transistor that constitutes the
2 connected to the power supply line via a second resistor.
A transistor and a third element forming the current mirror circuit
The emitter of the transistor is connected to the power supply via a third resistor.
Connected to the line, the bandgap current source
The flowing reference current is determined by the first, second, and third transistors.
Are folded back in accordance with the emitter area ratio,
A filter circuit, wherein the first and second constant currents are created . 2. The two transistors constituting the first differential pair
A resistor disposed between the second resistor and the second resistor
It is characterized by using a resistor with the same temperature characteristics as the resistor
The filter circuit according to claim 1, wherein 3. The first, second and third transistors of claim 1,
By adjusting the emitter area ratio, the first and the second
And the second constant current are set to values that can obtain the center frequency.
3. The method according to claim 1, wherein
Filter circuit.