JP3358693B2 - CCD solid-state imaging device package and sealing method therefor - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a CCD solid-state imaging device package and a sealing method, and more particularly, to a CCD solid-state imaging device.
The present invention relates to a CCD solid-state imaging device package that prevents edge short-circuiting that easily occurs between a chip on which a D solid-state imaging device is formed and a lead for external connection of a chip electrode, and a method of sealing the same.

[0002]

2. Description of the Related Art The configuration of a conventional CCD solid-state imaging device package will be described with reference to FIG. As shown in FIG. 7, a conventional CCD solid-state imaging device package 10 (hereinafter simply referred to as a CCD package 10) has a chip 12 (hereinafter simply referred to as a chip 1) on which a CCD solid-state imaging device is formed.
2), the Au bumps 1 on the electrode pads of the chip 12.
4 and a lead 16 made of Cu extending straight in the outer horizontal direction and facing the chip 12 having the same dimensions as the chip 12 and connecting the lead 1 with the chip 12.
And a plate-like glass lid 18 sandwiching the same. The glass lid 18 has the same plane outer dimensions as the chip 12 and is provided for protecting the surface of the chip 12 and ensuring reliability. Further, in the CCD package 10, the peripheral portions of the chip 12 and the glass lid 18 are sealed with each other, including the lead penetrating portion, with a sealant 22 so that the effective area of the chip 12 becomes a hollow portion 20. The height of the portion is maintained by the thickness of the lead 16. Further, the entire CCD package 10 except for the central portion of the glass lid 18 may be sealed with resin.

In the conventional method of manufacturing a CCD package 10, first, as shown in FIG. 8, leads 16 of a lead frame (not shown) are bonded to Au bumps 14 formed on electrode pads of a chip 12. Bonding is usually done by tape bonding (TAB, Tape Automat
ed Bonding). Next, a sealing agent 22 is applied to the peripheral portion of the glass lid 18 by a dispenser or the like, and the chip 12 and the glass lid 18 are aligned so that the sealing agent 22 comes on the peripheral portion of the chip 12 to which the leads 16 are bonded. Subsequently, the glass lid 18 is placed on the chip 12, and the glass lid 18 is pressurized and brought into a state of being pressed. When the sealant 22 is a thermosetting resin, the combined body of the chip 12 and the glass lid 18 is subjected to heat curing to cure the sealant 22, and when the sealant 22 is a UV curable resin, UV exposure is performed on the combination of the glass lid 18 and the
2 is cured. Thereby, the CCD package 10 shown in FIG. 7 can be obtained.

[0004]

However, conventional CCDs
In the package 10, when the glass lid 18 is pressed against the chip 12, as shown in FIG. 9, the periphery of the glass lid 18 comes into contact with the lead 16 due to the force for pressing the glass lid 18, and the lead 16 As a result, the lead 16 and the outer edge of the chip 12 often come into contact with each other. For this reason, there is a problem that the chip is electrically short-circuited or the characteristics of the CCD solid-state imaging device are deteriorated, resulting in a reduction in the product yield of the chip. This problem occurs more and more frequently as the CCD package becomes smaller and thinner, and it is desired to solve it as soon as possible.

[0005] In light of the above circumstances, an object of the present invention is to:
An object of the present invention is to provide a CCD solid-state imaging device package having a structure in which short-circuiting between a chip and a lead does not occur when the chip and the transparent insulating plate are sealed, and a method for sealing the same.

[0006]

In order to achieve the above object, a CCD solid-state imaging device package (hereinafter referred to as a first invention) according to the present invention comprises a chip on which a CCD solid-state imaging device is formed, and a chip. And a transparent insulating plate facing the chip and interposing the lead between the chip and the peripheral portion of the chip and the transparent insulating plate including the lead penetrating portion. In a CCD solid-state imaging device package sealed to each other, the lead has a shape such that the gap from the chip increases outward from the electrode pad bonding end of the lead, and the transparent insulating plate has an outer edge. The dimension is slightly smaller than the outer edge dimension of the chip, and the outer edge of the transparent insulating plate is located at the same or slightly outer side as the outer edge of the electrode pad of the chip.

Since the lead has the above-mentioned shape, the distance between the lead and the edge of the chip becomes large. Also, as described above, the outer edge of the transparent insulating plate is made smaller than the chip, and the outer edge of the transparent insulating plate is made smaller. The transparent insulating plate is positioned on the chip so that the transparent insulating plate is located on the outer edge of the electrode pad or slightly outside. Do not touch the other lead. Therefore, in the CCD solid-state imaging device package according to the present invention, since the outer edge of the transparent insulating plate contacts the lead and presses the lead as in the related art, and does not deform the chip, the present invention provides: The conventional problem that the lead and the chip make short-circuit contact can be solved.

In another CCD solid-state image pickup device package according to the present invention (hereinafter referred to as a second invention), the gap between the lead and the chip increases from the end of the lead to the electrode pad junction. The transparent insulating plate is characterized in that it is chamfered so that the surface of the transparent insulating plate facing the chip conforms to the shape of the lead.

In the case of the second invention, the planar outer dimensions of the transparent insulating plate may be substantially the same as the planar outer dimensions of the chip. Since the lead has a shape as described above, the distance between the lead and the edge of the chip is large, and since the lower surface of the peripheral portion of the transparent insulating plate is chamfered as described above, the transparent insulating plate is placed on the chip. The transparent insulating plate does not come into contact with the portion outside the lead from the electrode pad connection portion when the positioning and pressure bonding are performed. Therefore, in the CCD solid-state imaging device package according to the present invention, since the outer edge of the transparent insulating plate contacts the lead and presses the lead as in the related art, and does not deform the chip, the present invention provides: The conventional problem that the lead and the chip make short-circuit contact can be solved.

Further, another CCD solid-state imaging device package according to the present invention (hereinafter referred to as a third invention) has an insulating property between the chip and a lead portion sandwiched between the chip and the transparent insulating plate. It is characterized in that a spacer made of a material is interposed. In the CCD solid-state imaging device package according to the present invention, when the transparent insulating plate is aligned and pressed on the chip, even if the outer edge of the transparent insulating plate comes into contact with the portion outside the lead from the electrode pad connection portion, the lead Since the lead is supported by the spacer interposed between the portion and the chip, the lead does not deform to the chip side. Therefore, the present invention can solve the conventional problem that the lead and the chip make short-circuit contact.

According to a first aspect of the present invention, there is provided a method of sealing a CCD solid-state imaging device package, wherein a transparent insulating plate is superimposed on a chip having leads tape-bonded, and peripheral portions of the chip and the transparent insulating plate are mutually sealed including a lead penetrating portion. When sealing with an agent, a sealing agent for sealing is applied to the lower surface of the peripheral portion of the transparent insulating plate having an outer edge size slightly smaller than the outer edge size of the chip, and the outer edge of the transparent insulating plate is A state in which the transparent insulating plate is positioned on the chip so as to be the same as or slightly outside the outer edge, and the chip and the lead frame are held so that the lower surface of the lead frame is higher than the upper surface of the lead. In this method, the sealant is cured while pressing the transparent insulating plate against the chip.

In the transparent insulating plate used in the present invention, when the external dimension (width) of the chip is 3 to 5 mm square, the external dimension of the plane is about 0.2 mm to about 0.4 mm on one side of the external dimension of the chip. About small. The lead used in the present invention may be formed in advance in such a shape that the gap between the lead and the chip becomes larger outward from the electrode pad joint end of the lead, or a flat lead frame may be used. Such a shape may be formed by changing the height at which the lead frame is held and pressing the transparent insulating plate.
In the method of the present invention, when holding the chip and the lead frame, the height of the lower surface of the lead frame is generally higher than the upper surface of the lead by about 0.1 mm to 0.3 mm. At this time, the distance between the electrode joint end of the lead and the holding point of the lead frame is about 5 to 10 mm. When the sealant is a thermosetting resin, the sealant can be cured by applying heat curing, and when the sealant is a UV-curable resin, the sealant can be cured by applying UV exposure.

According to a second aspect of the present invention, there is provided a method for sealing a CCD solid-state imaging device package, wherein a lower surface of a peripheral portion of a transparent insulating plate is chamfered, and a sealing agent for sealing is provided inside a chamfered region on a lower surface of the transparent insulating plate. And place the transparent insulating plate on the chip so that the sealant applied to the transparent insulating plate is located outside the electrode pad of the chip, and place the lower surface of the lead frame higher than the upper surface of the lead. The sealant is cured while pressing the transparent insulating plate against the chip while holding the chip and the lead frame.

[0014]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

[0015]

Embodiment 1 FIG. 1 shows a CCD solid-state imaging device package according to the first invention (hereinafter simply referred to as a CCD solid-state imaging device package).
FIG. 1 is a schematic cross-sectional view illustrating a configuration of a first embodiment (referred to as a package). 1 to 6 are given the same reference numerals for the same parts and materials as those shown in FIGS. 7 to 9, and the description thereof is omitted. The CCD package 30 of the present embodiment includes the chip 12
And a lead 32 made of Cu and a glass lid 34.

The leads 32 are made of Au bumps 1 of the chip 12.
4 as viewed in a direction perpendicular to the plane having
The bump bonding end 36 is bent so that it is closer to the chip 12 side than the other end (outer lead) 38. In other words, the lead 32 is the lead 32
The shape is such that the gap from the chip 12 increases from the Au bump bonding end 14 toward the outside.
With the other end 38 separated from the TAB tape,
The height difference H between the upper surface of the Au bump bonding end 36 of the lead 32 and the lower surface of the other end 38 of the lead 32 when the chip 12 is placed on a horizontal plane is about 0.1 mm to 0.3 mm. The planar outer dimension (width) of the glass lid 34 is 3 to 3 mm.
5 mm, and approximately 0.2 mm on one side from the planar outer dimensions of the chip 12.
When the glass lid 34 is mounted on the chip 12, the outer edge of the glass lid 34 is located at substantially the same position as the line connecting the outer edges of the Au bumps 14 of the chip 12, Or located slightly outside. The peripheral portions of the chip 12 and the glass lid 34 are sealed with a sealant 22, and the central portion is configured as a hollow portion 20.

Next, with reference to FIGS. 2 and 3, illustrating a bonding step between the chip 12 and the glass lid 34 that you only to the production of the CCD package 30. As shown in FIG. 2, the leads 32 formed in the above-described shape are tape-bonded on the Au bumps 14 of the chip 12. On the other hand, chip 1
The sealant 22 is applied by a dispenser or the like to the lower surface of the peripheral portion of the glass lid 34 facing the surface 2. Next, as shown in FIG. 3, the chip 12 is mounted on the mounting table A, and a TAB tape (not shown) of the lead 32 is mounted on the supporting table B. Then, after positioning the chip 12 and the glass lid 34 so that the sealing agent 22 comes on the periphery of the chip 12, the glass lid 34 is pressed on the chip 12.

At this time, as shown in FIG. 3, the holding height of the TAB tape is higher than the lower surface height of the glass lid 34, and
The TAB tape and the chip 12 are held so that the height difference h between the lower surface of the AB tape and the lower surface of the glass lid 34 is about 0.1 mm to about 0.3 mm. The horizontal distance between the holding point 38 of the TAB tape and the Au bump bonding end 36 of the lead is about 5 to 10 mm. The lead 34 may have a shape preformed so that such a height difference occurs.Also, a TAB tape having a normal flat shape lead is used, and when the glass lid 34 is crimped, The chip 12 and the TAB tape may be supported so that the above-mentioned height difference is obtained. Next, when a necessary curing process that differs depending on whether the sealant 22 is thermosetting or UV-curing is performed,
A peripheral portion between the chip 12 and the glass lid 34 is sealed by the sealant 22, and a C according to the present invention as shown in FIG.
A CD package 30 can be obtained.

In the CCD package 30 according to the first embodiment, since the leads 32 are bent in the above-described shape, the gap between the leads 32 and the outer edge of the chip 30 increases outward, and The outer edge of the lid 34 is located substantially at the outer edge of the Au bump 14 of the chip 12. Therefore, even when the glass lid 34 is pressed against the chip 12,
There is no possibility that the lead 32 contacts the outer edge of the chip 12 to cause a short-circuit phenomenon or to cause deterioration of the characteristics of the CCD solid-state imaging device.

Embodiment 2 FIG. 4 is a schematic sectional view showing a glass lid 42 used in Embodiment 2 of the CCD package according to the second invention, and FIG. 5 is a schematic diagram showing the configuration of a CCD package 40 of Embodiment 2. FIG. The CCD package 40 of the present embodiment includes:
A glass lid 42 shown in FIG. 4 is used instead of the glass lid 34 of the first embodiment. The glass lid 42 has a plane outer dimension substantially equal to the planar outer dimension of the chip 12 and a surface 44 facing the chip 12 in the peripheral portion thereof.
And chamfering (M) processing. At this time, when the chip 12 and the TAB tape of the CCD package 40 are held as shown in FIG. 3 while maintaining the dimension h shown in FIG. 3, the lower surface of the peripheral portion of the glass lid 42 is adjusted to the shape of the lead 32. Chamfering has been applied to make it into a shape.

With the above configuration, the CCD package 40
In this case, even when the glass lid 34 is pressed against the chip 12, the gap between the lead 32 and the outer edge of the chip 30 increases, and the lead 32 contacts the outer edge of the chip 12 to cause a short circuit phenomenon, There is no possibility that the characteristics of the image sensor are deteriorated.

Embodiment 3 This embodiment is an embodiment of the CCD package of the third invention. FIG. 6A is a schematic cross-sectional view of the CCD package 50 of Embodiment 3 in a section including leads. (B) CCD
FIG. 4 is a schematic cross-sectional view of a cross section not including a lead of a package 50. The CCD package 50 of this embodiment is different from the conventional CCD package 10 shown in FIG.
As shown in FIG. 3A, a spacer 52 made of an insulating material, for example, made of quartz, is provided between the lead 16 and the chip 12.
It has. The height of the spacer 52 is the same as that of the Au bump 14.
Has almost the same height as. The space between the Au bump 14 and the spacer 52 is sealed by the sealant 22.
In a cross section not including the leads 16, the peripheral portion between the chip 12 and the glass lid 18 is sealed with a sealant 22, as shown in FIG. 6B.

With the above configuration, the CCD package 50
In this case, even if a pressing force acts on the lead 16 when the glass lid 18 is pressed against the chip 12, the lead 16 is deformed because the lead 16 is deformed because the lead 16 is supported by the spacer 52.
Is prevented from coming into contact with the outer edge portion. Therefore, lead 1
6 does not contact the outer edge of the chip 12 to cause a short circuit phenomenon or to cause a decrease in the characteristics of the CCD solid-state imaging device.

[0024]

According to the first aspect of the present invention, a lead having such a shape that the gap between the lead and the chip increases outward from the electrode pad bonding end, and the outer edge dimension is smaller than the outer edge dimension of the chip. The CCD solid-state imaging device package according to the present invention includes a transparent insulating plate having a small transparent insulating plate, the outer edge of the transparent insulating plate being the same as or slightly outside the outer edge of the electrode pad of the chip. Even when crimped to the chip, the lead does not come into contact with the outer edge of the chip to cause a short circuit phenomenon or to reduce the characteristics of the chip.

According to the second aspect of the present invention, the lead having such a shape that the gap between the lead and the chip increases outward from the electrode pad bonding end, and the surface facing the chip is chamfered. With the provision of the transparent insulating plate, the CCD solid-state imaging device package according to the present invention allows the leads to contact the outer edge of the chip to cause a short circuit phenomenon even when the transparent insulating plate is pressed against the chip, There is no possibility that the characteristics are deteriorated.

If the CCD solid-state imaging device package according to the present invention is applied, the edge short-circuit phenomenon that occurs in the conventional CCD solid-state imaging device package does not easily occur even if the package is reduced in size and thickness. Therefore, the product yield is improved, and stable productivity can be secured.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a configuration of a first embodiment of a CCD solid-state imaging device package according to the present invention.

FIG. 2 is a diagram illustrating a sealing step of sealing a glass lid and a chip in the CCD package of FIG. 1;

FIG. 3 is a view for explaining a sealing step following FIG. 2;

FIG. 4 is a schematic cross-sectional view showing a cross section of a glass lid of Embodiment 2 of the CCD solid-state imaging device package according to the present invention.

FIG. 5 is a schematic sectional view showing a configuration of a CCD solid-state imaging device package according to a second embodiment of the present invention.

FIGS. 6A and 6B are schematic cross-sectional views each showing a main configuration of a third embodiment of a CCD solid-state imaging device package according to the present invention.

FIG. 7 is a schematic sectional view showing a configuration of a conventional CCD solid-state imaging device package.

FIG. 8 is a diagram illustrating a sealing process of a glass lid and a chip in a conventional CCD solid-state imaging device package.

FIG. 9 is a cross-sectional view of a CCD solid-state imaging device package for explaining a problem in a conventional CCD solid-state imaging device package.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Conventional CCD solid-state image sensor package 12 Chip 14 Au bump 16, 32 lead 18, 34, 42 Glass lid 20 Hollow part 22 Sealant 30 CCD solid-state image sensor package of Example 1 36 Au bump joint end part of lead 38 Lead Frame support point 40 CCD solid-state imaging device package of the second embodiment 44 Surface facing glass chip chip 50 CCD solid-state imaging device package of the third embodiment 52 Spacer

Claims (6)

(57) [Claims] 1. A chip on which a CCD solid-state imaging device is formed, a lead connected to an electrode pad of the chip, and a transparent insulating plate facing the chip and having a lead interposed between the chip and the chip. C in which the peripheral portions of the chip and the transparent insulating plate are mutually sealed including the lead penetrating portion.
In the CD solid-state imaging device package, the lead has a shape such that the gap from the chip becomes larger outward from the electrode pad bonding end of the lead, and the outer edge of the transparent insulating plate is smaller than the outer edge of the chip. small <br/> fence, transparent outer edge of the insulating plate is equal to or outer edge of the electrode pads of the chip, CCD solid-state image pickup element package and being located outwardly Ri. 2. A chip on which a CCD solid-state imaging device is formed, a lead connected to an electrode pad of the chip, and a transparent insulating plate facing the chip and having a lead interposed between the chip and the chip. C in which the peripheral portions of the chip and the transparent insulating plate are mutually sealed including the lead penetrating portion.
In the CD solid-state imaging device package, the lead has a shape such that the gap from the chip increases outward from the electrode pad bonding end of the lead, and the transparent insulating plate has a peripheral surface facing the chip. Characterized by being chamfered so as to conform to the shape of the lead. 3. A chip on which a CCD solid-state imaging device is formed, a lead connected to an electrode pad of the chip, and a transparent insulating plate facing the chip and interposing the lead between the chip. C in which the peripheral portions of the chip and the transparent insulating plate are mutually sealed including the lead penetrating portion.
A CD solid-state image sensor package , in which a lead portion sandwiched between a chip and a transparent insulating plate and the chip
Interposed, having a spacer made of an insulating material, the space
A CCD solid-state imaging device package, wherein the semiconductor device is located outside the pad on the chip . 4. The C according to claim 3, wherein the transparent insulating plate is a glass plate and the lead is a Cu lead.
CD solid-state imaging device package. 5. A method for encapsulating a CCD solid-state image sensing device package in which a chip on which a CCD solid-state image sensing device is formed is sealed, wherein a transparent insulating plate is superimposed on a chip to which leads are tape-bonded, and the chip and the transparent when sealing with the sealing agent to each other the peripheral portions including the lead through part of the insulating plate, a seal for sealing the lower surface of the peripheral portion of the transparent insulation panel having a small again outer dimensions Ri by outer dimensions of the chip Apply the agent, position the transparent insulating plate so that the outer edge of the transparent insulating plate is the same as or the outer edge of the electrode pad of the chip, place it on the chip, and make sure that the lower surface of the lead frame is lower than the upper surface of the lead. A method of sealing a CCD solid-state imaging device package, wherein a sealant is cured while pressing a transparent insulating plate against a chip while holding the chip and a lead frame at a high position. 6. A method for encapsulating a CCD solid-state image sensing device package in which a chip on which a CCD solid-state image sensing device is formed is sealed. When sealing the peripheral parts of the insulating plate with each other, including the lead penetrating parts, with the sealant, chamfering the lower surface of the peripheral part of the transparent insulating plate, and inside the chamfering area of the lower surface of the transparent insulating plate Apply a sealing agent for sealing, position the transparent insulating plate so that the sealing agent applied to the transparent insulating plate is located outside the electrode pad of the chip, and place it on the chip. A solid-state image pickup device, wherein the sealant is cured while pressing the transparent insulating plate against the chip while holding the chip and the lead frame at a position higher than the upper surface of the CCD. Package sealing method.