JP3362181B2 - Fine processing method and apparatus by radical control - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for microfabrication of a material by injecting specific radicals into plasma (radical control), and an apparatus used in the method.

[0002]

2. Description of the Related Art A material microfabrication process using plasma is an essential technique for microfabrication of integrated circuits. In the microfabrication process of this material, an appropriate reactive gas is introduced into the plasma, and the microfabrication is performed by the reaction between ions or radicals generated by the decomposition or excitation of the gas and the substrate to be treated. Radicals here play a crucial role in the realization of these processes.

[0003]

As described above, radicals play an extremely important role in the microfabrication process of LSI and the like using plasma. The density and composition of radicals depend on the type of gas used conventionally. It is determined by external parameters such as pressure, applied power, size of process container and material. Further, since radicals are electrically neutral, their control is extremely difficult.

Therefore, with such changes in external parameters, the density of only specific radicals that play an important role in the microfabrication process of materials is dramatically improved in plasma, and the density and composition of desired radicals are improved. It is impossible to control with high precision, and thus it has been difficult to expect a dramatic improvement in fine processing of materials.

Further, in the material microfabrication process, a plurality of gases are used, and the decomposition of these gases causes
Radicals are generated. As for radicals, since the generation cross-section of radicals generated from each gas has energy dependence, it is impossible to obtain a desired radical density and composition by decomposing a plurality of gases within the energy range of the plasma used. It was possible.

An object of the present invention is to provide a microfabrication method by radical control, which makes it possible to achieve a great improvement in microfabrication characteristics that could not be obtained conventionally, and an apparatus used in the method. .

[0007]

In the fine processing method by radical control of the present invention, a plasma of a first substance which is a reactive gas introduced into a vacuum container is formed, and a second gas which is a reactive gas is formed. By decomposing a substance outside the plasma to generate radicals having a controlled density and / or composition, and injecting the generated radicals into the plasma, a substrate to be treated arranged in the plasma is finely divided. In the fine processing method by radical control so as to process, the second substance is decomposed by heat to generate the radical.

The microfabrication method by radical control according to the present invention forms plasma of the first substance which is the reactive gas introduced into the vacuum container, and at the same time, the second substance which is a solid material, a liquid material or a combination thereof. By decomposing a substance outside the plasma to generate radicals having a controlled density and / or composition, and injecting the generated radicals into the plasma, a substrate to be treated arranged in the plasma is finely divided. In the fine processing method by radical control so as to process, the second substance is decomposed by light or electron irradiation to generate the radical.

In the microfabrication method by radical control according to the present invention, the plasma of the first substance is applied with any of microwave, UHF wave, VHF wave, RF wave and direct current, or is irradiated with an electron beam. It is characterized by being formed by carrying out.

The radical-controlled microfabrication apparatus of the present invention includes a vacuum container including a plasma discharge mechanism, a vacuum exhaust device connected to the vacuum container, a vacuum container connected to the vacuum container, and a radical generating mechanism. And / or a radical generating chamber for generating radicals having a controlled composition, and in the radical generating chamber, a raw material that is a reactive gas supplied to the chamber is decomposed by the radical generating mechanism to obtain the raw material. Microfabrication by radical control configured so that radicals generated by decomposition of substances and having controlled density and / or composition can be transported to the vacuum container and injected into plasma generated by the plasma discharge mechanism. In the apparatus, the radical generating mechanism is composed of a heating mechanism.

The radical-controlled microfabrication apparatus of the present invention includes a vacuum container including a plasma discharge mechanism, a vacuum exhaust device connected to the vacuum container, a vacuum container connected to the vacuum container, and a density generating unit including a radical generating mechanism. And / or a radical generation chamber for generating radicals whose composition is controlled, and the radical generation mechanism, wherein the raw material which is a solid material, a liquid material or a combination thereof supplied to the chamber is used as the radical generation mechanism. Radicals, which are decomposed by the method and whose density and / or composition is controlled by the decomposition of the raw material, are transported to the vacuum container and can be injected into the plasma generated by the plasma discharge mechanism. In the microfabrication device with radical control, the radical generation mechanism consists of a light or electron irradiation mechanism. The one in which the features.

In the microfabrication apparatus by radical control according to the present invention, the plasma discharge mechanism includes a microwave and UHF.
Wave, VHF wave, RF wave, direct current and electron beam generation power source is connected.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail by way of specific examples with reference to the accompanying drawings. Specific Example FIG. 1 shows an example of a microfabrication apparatus by radical control of the present invention used in a specific example of a microfabrication method by radical control of the present invention. In particular, plasma for microfabrication of a substrate to be processed arranged in plasma. It is configured as an etching device.

In FIG. 1, reference numeral 901 denotes a vacuum container and 902.
Is a magnetic coil, 903 is a quartz window, 904 is a waveguide, 90
5 is a matching mechanism, 906 is a microwave power source, 907
Is a gas inlet, 908 is an exhaust port, 909 is an electrode as a sample stage, 910 is a substrate to be treated, 911 is a water cooling tube for cooling,
912 is a high frequency power source, 913 is a radical injection mechanism, 91
4 is a reactive gas inlet, 915 is a radical generating mechanism, 9
16 is a radical, 917 is a slit, and 918 is plasma (ion).

The present inventors formed a silicon oxide film on a silicon (Si) substrate arranged in a region where plasma is formed by using the above-mentioned device (FIG. 1), and obtained the silicon oxide film. A high frequency bias was applied to the substrate to be processed on which an organic resist pattern was further formed, and etching of the silicon oxide film was tried.

In forming plasma, methane trifluoride (CHF ₃ ) and hydrogen (H ₂ ) were introduced from a gas inlet 907, and a microwave was applied from a microwave power source 906. At this time, etching was performed by controlling radical density, composition, ion density, and energy by appropriately selecting parameters such as flow rate, pressure, microwave power, bias, CHF ₃ / H ₂ ratio of each gas. , Silicon oxide film etching rate 5000A
/ Min, the etching selectivity of the silicon oxide film to silicon was 15, and the uniformity was 3σ, which was 15%.

Therefore, hexafluoropropylene oxide (HFPO) gas is introduced from the reactive gas inlet 914 to increase the temperature of the radical generating mechanism 915, and flow rate, pressure, microwave power, bias, CHF ₃ / H _{2 are} added.
When parameters such as the ratio were appropriately selected, it was found that the etching rate of the silicon oxide film was 6000 A / min, the etching selection ratio of the silicon oxide film to silicon was 40, and the uniformity was 3σ, which was 10%. Has succeeded in achieving a dramatic improvement in At this time, when the radical density in the plasma was measured by laser spectroscopy, CF ₂ radicals were injected into the plasma,
It has been found that the etching selectivity is improved by the interaction between CF ₂ and H radicals.

Further, CF ₂ produced by the above method
As a result of injecting into the plasma CF radicals generated by reacting H radicals with radicals, the etching rate of the silicon oxide film is 5000 A / min, the etching selectivity of the silicon oxide film to silicon is 50, and the uniformity is 3σ.
It was found to be 10%, and similar to the above case, good etching characteristics were obtained. From the above, it has been clarified that the plasma etching characteristics can be significantly improved by selectively introducing radicals that play an effective role in the etching characteristics.

Next, detailed experimental results of etching the silicon oxide film shown as this specific example will be described based on experimental data. First, the vacuum container 901 shown in FIG.
A mixed gas of methane trifluoride (CHF ₃ ) and hydrogen (H ₂ ) gas was introduced therein at a gas flow rate of 100 sccm from a gas introduction port 907. At this time, the pressure of the mixed gas is 0.
It was kept at 4 Pa, and the ratio of the mixed gas, that is, the amount of hydrogen (H ₂ ) with respect to trifluoromethane (CHF ₃ ) was changed.

Next, a microwave having a frequency of 2.45 GHz is introduced with an electric power of 900 W to form plasma 918, a silicon oxide film having a film thickness of 1.5 μm is formed on the Si substrate, and the silicon oxide film is formed on the silicon oxide film. A silicon oxide film was etched by applying a high frequency bias 912 having a frequency of 400 KHz to the substrate 910 to be processed on which an organic resist pattern (line and space having a pattern size of 0.3 μm) was formed. The DC voltage of the applied high frequency bias is 200V.

FIG. 2 shows the result of etching in this case (H ₂ / (CHF ₃ + H ₂ ) dependence of etching rate and selectivity of silicon oxide film and silicon (Si) substrate). In the figure, the curves of ○ and ● show the etching rate, and the curve of □ shows the selection ratio. According to FIG. 2, the etching rate of the silicon oxide film and the silicon (Si) substrate decreases as the mixing ratio of hydrogen (H ₂ ) increases, but at a mixing ratio of hydrogen (H ₂ ) of 30%,
The etching rate of the silicon oxide film is about 5000 A /
It can be seen that the etching selection ratio with respect to the silicon (Si) substrate is about 15.

Next, hexafluoropropylene oxide (HFPO) gas is introduced through the reactive gas inlet 914, the temperature of the radical generating mechanism 915 is kept at 500 ° C., and the pressure of the vacuum container 901 is kept at 0.4 Pa. did. Similarly to the above, a mixed gas of methane trifluoride (CHF ₃ ) and hydrogen (H ₂ ) gas was introduced from the gas inlet 907 at a gas flow rate of 100 sccm. At this time, the pressure in the vacuum container was kept at 0.4 Pa, and the ratio of the mixed gas, that is, hydrogen (H ₂ ) to trifluoromethane (CHF ₃ )
Was changed.

Further, a microwave is introduced at a power of 900 W to form plasma 918, and a silicon oxide film having a thickness of 1.5 μm is formed on the Si substrate in the same manner as in the above example, and the silicon oxide film is formed on the silicon oxide film. A silicon oxide film was etched by applying a high frequency bias 912 having a frequency of 400 KHz to the substrate 910 to be processed on which an organic resist pattern (line and space having a pattern size of 0.3 μm) was formed. The DC voltage of the applied high frequency bias is 1
It is from 00V to 500V.

FIG. 3 shows the result of etching at this time.
In order to facilitate comparison with FIG. 2 in the case of the above example (when hexafluoropropylene oxide (HFPO) gas is not introduced), the same display mark and the same scale are shown. From FIG. 3, hydrogen (H
The etching rate of the silicon oxide film and the silicon substrate decreases as the mixing ratio of ₂ ) increases, but hydrogen (H
₂ ) When the mixture ratio is 40%, the etching rate of the silicon oxide film is 6000 A / min, the etching selectivity ratio of the silicon oxide film to silicon is 40, and the uniformity is 3σ, 10%.
It turned out to be Pattern size at this time 0.2μ
When the shape of the silicon oxide film with m and aspect 5 was observed by SEM, it was almost vertical. That is, we succeeded in dramatically improving the etching characteristics by radical injection.

In order to clarify the reason why the etching characteristics were dramatically improved, the radical density in plasma was measured by infrared semiconductor laser absorption spectroscopy.
First, hexafluoropropylene oxide (HFP
O) If no gas is introduced, microwave power 900 W,
When the pressure is 0.4 Pa and the mixed gas of hydrogen trifluoride (CHF ₃ ) and hydrogen (H ₂ ) gas (hydrogen (H ₂ ) 30%), CF ₂ is 10 as the radical density in the plasma.
¹³ / cm ³ , CF is 10 ¹² / cm ³ , CF ₃ is 10 ¹¹ / cm ^3.
Met.

Next, only hexafluoropropylene oxide (HFPO) gas is introduced, the pressure is maintained at 0.4 Pa, the temperature of the radical generating mechanism 915 is increased,
When kept at 0 ° C., the CF ₂ radical density was 10 ¹⁴ / cm ³ in the vacuum vessel 901, and hexafluoropropylene oxide (HFPO) was 10% in the reaction vessel.
It was revealed that 0% decomposition occurred and CF ₂ radicals were generated.

Therefore, while introducing CF ₂ radicals generated by thermal decomposition of hexafluoropropylene oxide (HFPO), a mixed gas of hydrogen trifluoride (CHF ₃ ) and hydrogen (H ₂ ) (hydrogen (H ₂ ) 40%), when a microwave discharge is generated, CF ₂ radical and CF radical density are about 10 ¹⁴ / cm ³ respectively.
And about 10 ¹² / cm ³ , and the CF ₃ radical density was found to be 10 ¹¹ / cm ³ . Thus, by selectively introducing CF ₂ radicals, it has been found that can dramatically increase the CF ₂ radicals density in the etching. Hexafluoropropylene oxide (HFPO)
Since the density of CF ₂ radicals to be introduced can be controlled by controlling the thermal decomposition temperature of, the radical density during etching can also be controlled.

When the CF ₂ radical was injected and the pattern shape when the selection ratio of the Si substrate to the silicon oxide film was 40 was observed by SEM, the silicon oxide film was etched into a substantially vertical shape and the underlying silicon was formed. No etching of the substrate was observed.

In the above, CF ₂ radicals were injected by the thermal decomposition of hexafluoropropylene oxide (HFPO). As a different method for producing CF ₂ radicals, perfluoropropene C ₃ F ₆ was used as the wavelength. By irradiation with a 9.6 μm CO ₂ laser and VUV light, CF ₂ radicals (density 10 ¹⁶ / c
m ³ ) could be generated.

In the above, CF ₂ radicals were injected by thermal decomposition of the reactive gas, but solid or liquid (in the claims, these gases, solid materials or liquid materials are collectively referred to as the second substance). It is also possible to generate similar CF and CF ₂ radicals by irradiating electromagnetic waves such as plasma and laser, or by applying heat. For example, as the above method, an organic material synthesized by fluorine and carbon atoms as main components, such as Teflon, CO ₂ laser, excimer laser, fluorine laser,
It was confirmed by infrared semiconductor laser absorption spectroscopy that CF ₂ radicals were generated from the above-mentioned material when irradiated with radiation emitted from SOR (synchrotron orbit radiation). Further, when an electric field was applied to the above material to change the energy of the ions generated from the plasma for irradiation, it was possible to selectively generate CF ₂ radicals. Next, it was found that it is possible to selectively generate CF radicals by changing the organic structure, composition and additive element and irradiating with electromagnetic waves such as plasma and laser. In this case, compared to that emitted the CF ₂ radicals, in the composition of materials, such as organic,
By increasing the ratio of carbon atoms to fluorine atoms or by mixing hydrogen atoms in the material,
It was possible to generate CF radicals.

Further, by introducing a liquid material and irradiating the material with electromagnetic waves such as plasma and laser, or by applying heat, it is possible to generate similar CF, CF ₂ radicals. For example, perfluoropropene C ₃ F
_{When 6} gas or C ₆ F ₆ gas is liquefied by cooling these gases, the above electromagnetic waves such as plasma and laser are irradiated. Compared with the case where the gas is irradiated with these electromagnetic waves such as plasma and laser, Since the reaction efficiency was high, it was possible to efficiently generate CF and CF ₂ radicals.

Further, in the above, CF _{2 produced} by thermal decomposition of hexafluoropropylene oxide (HFPO) is used.
Although radicals were injected, CF radicals were generated in the radical generation mechanism 915 by laser photolysis of gas and reaction of H radicals, which were converted into trifluoride methane (CHF ₃ ) and hydrogen (H ₂ ) gas. As a result of injecting into plasma, the etching rate of the silicon oxide film was 5000 A / min with a substrate bias of 350 V, a mixed gas of hydrogen trifluoride (CHF ₃ ) and hydrogen (H ₂ ) gas (hydrogen (H ₂ ) 30%). It was found that the etching selectivity of the silicon oxide film to silicon was 50 and the uniformity was 3σ, which was 10%, and good etching characteristics were obtained as in the case described above.

From the above, thermal decomposition, photolysis, electron irradiation decomposition,
By using decomposition by discharge, decomposition by plasma, decomposition by catalytic action, and decomposition by particle collision, C from reactive gas
It was concluded that if F ₂ or CF radicals are generated and introduced into plasma, highly selective etching (microfabrication) of the silicon oxide film with respect to silicon (Si) can be performed with high precision.

Another example of etching a substrate using the microfabrication apparatus of the present invention by radical control shown in FIG. 1 will be described below. Octafluorocyclobutane (C ₄ F ₈ ), octafluoropropane (C ₃ F ₈ ),
Methane trifluoride (CHF ₃ ) and carbon monoxide (CO)
1. After introducing a reactive gas such as from the gas introduction port 907,
A discharge is generated by a microwave of 45 GHz, and a magnetic field of about 875 Gauss is applied by the magnetic coil 902 to generate a high-density plasma so that electrons make a cyclotron motion in the discharge. At this time, the magnetic field to be applied is appropriately selected together with the frequency to be introduced so as to satisfy the cyclotron resonance of electrons. Alternatively, electromagnetic waves of UHF wave (500 MHz), VHF wave (100 MHz) and RF wave (13.56 MHz) are introduced to generate high density plasma. These cases include the case where no magnetic field is applied.

On the other hand, an electrode 909 as a sample stage is installed inside the vacuum container 901, and a wafer or the like as a substrate 910 to be processed is placed on the electrode 909.
A high frequency power source 912 for applying high frequency bias power is connected to the electrode 909 through a matching device 905,
For example, control from a frequency of 100 KHz to about 100 MHz is possible. Therefore, a bias of about minus several V to about 500 V is generated at the electrode 909 by the application of the high frequency, and is applied to the substrate 910 to be processed. The substrate 910 to be processed placed on the electrode 909 is cooled by the cooling water cooling pipe 911. An exhaust port 908 leading to the vacuum exhaust device is connected to the vacuum container 901.
From the gas inlet 907, for example, trifluoromethane (CH
A fixed amount of F ₃ ) is introduced and is exhausted by the vacuum exhaust device so that the inside of the vacuum container 901 is maintained at a predetermined gas pressure.

Methane trifluoride (CHF ₃ ) introduced through the gas inlet 907 is decomposed in plasma to produce F, C
Radicals such as F, CF ₂ , CF ₃ and ions such as CF ⁺ 9
18 occurs. The radicals generated from the plasma react on the substrate 910 to be processed, and the substrate 910 to be processed is subjected to reactive ion etching under an appropriate bias voltage.
At this time, parameters such as flow rate, pressure, microwave power, and bias are appropriately selected to control radical density, composition, ion density, and energy.
A desired etching can be realized.

Further, using the apparatus shown in FIG. 1, in a radical generating mechanism 915, a certain substrate is cooled, chlorine (Cl ₂ ) gas is adsorbed on the substrate, and is liquefied or solidified. Even when etching is performed by, for example, irradiating an excimer laser, plasma, or electromagnetic waves to generate and inject Cl radicals, vertical etching is realized with a high selection ratio and etching rate.

The present invention has been described in detail above with reference to specific examples. Here, the control of the density and composition of radicals, which is the most important for the present invention, will be summarized again. The radical generating mechanism 915 is, for example, a heating device equipped with a lamp or a heater as shown in a specific example, a device in which a catalyst mounting for promoting a catalytic reaction and a heating device are combined, an electron irradiation device or particles. Is a collision device.

The generated radicals are transported into the plasma formed in the vacuum container through the radical slits,
It is possible to inject radicals into the plasma. It should be noted that the radical slits can be appropriately attached and detached, but when a large number of radicals are generated, it is possible to select a specific radical by selecting the material and temperature of the radical slits.

By injecting the radicals introduced from the radical generating tube into the plasma, it becomes possible to selectively increase only the density of a specific radical in the plasma. On the contrary, by injecting a specific radical and reacting the radical with the radical generated in the plasma,
It is also possible to reduce the density of certain radicals in the plasma. In other words, this radical injection mechanism makes it possible to control the density and composition of radicals in the plasma within the vacuum container in a wide range and precisely.

In the above-mentioned specific examples, the heating method is used as a method for generating radicals. Alternatively, radicals can be efficiently generated by irradiating a solid target or a liquid material with light or electrons. For example, since similar results can be obtained such that the density and composition of radicals in the plasma in the vacuum container can be controlled in a wide range and precisely, it is possible to appropriately select from these.

The present invention also includes a radical-controlled microfabrication apparatus such as a plasma etching apparatus used in the radical-controlled microfabrication method of the present invention described in the specific examples. The constructions of these apparatuses are as follows. is there.

That is, the fine processing apparatus by radical control is a vacuum vessel including a plasma discharge mechanism, a vacuum exhaust apparatus connected to the vacuum vessel, and a vacuum vessel, and a heating mechanism, a light or electron irradiation mechanism. At least a radical generation chamber for generating radicals of which density and / or composition is controlled by including a radical generation mechanism comprising any of the following, in the radical generation chamber, the raw material supplied to the radical generation chamber (here, The substance includes gas, solid material or liquid material) is decomposed by the radical generation mechanism, and density and / or
Alternatively, the radicals whose composition has been controlled can be transported to a vacuum container and injected into the plasma generated by the plasma discharge mechanism.

[0044]

According to the microfabrication method by radical control of the present invention, it is impossible to perform conventional microfabrication by connecting a simple radical generator to a conventional etching apparatus or by installing the radical generator inside. It is possible to significantly improve the fine processing characteristics.

For example, according to the present invention, it is possible to apply to fine processing using a halogen gas such as fluorocarbon gas or chlorine gas or a hydrocarbon gas.

Further, according to the radical processing microfabrication apparatus of the present invention, a microfabrication apparatus (for example, a plasma etching apparatus or a radical etching apparatus) for realizing the above process (microfabrication) is configured as a simple apparatus. Therefore, these devices can be provided at low cost.

With respect to the effects of the present invention, for example, in the fine processing method by radical control of the specific example (FIG. 1), the generated radicals are transported to the vacuum container through the slit and injected into the plasma. This makes it possible to selectively and dramatically increase the density of specific radicals in plasma, for example, radical CF ₂ which is a radical that plays an important role in etching.

Further, under the radical implantation, parameters such as bias are appropriately selected to control the density and energy of ions, so that the etching characteristics of the substrate to be processed, for example, silicon (S
It is possible to dramatically improve the selection ratio of i), the fine processing shape, the etching rate, the uniformity, and the like.

[Brief description of drawings]

FIG. 1 shows an example of a radical processing microfabrication apparatus of the present invention used in a specific example of a radical processing microfabrication method of the present invention.

FIG. 2 Hexafluoropropylene oxide (HF
The result of etching when the (PO) gas is not introduced is shown.

FIG. 3 Hexafluoropropylene oxide (HF
The result of etching when the (PO) gas is introduced is shown.

[Explanation of symbols]

901 Vacuum container 902 magnetic coil 903 Quartz window 904 Waveguide 905 Matching mechanism 906 Microwave power supply 907 gas inlet 908 exhaust port 909 electrode 910 Processed substrate 911 Water cooling tube for cooling 912 high frequency power supply 913 Radical injection mechanism 914 Reactive gas inlet 915 Radical generation mechanism 916 Radical 917 slit 918 Plasma (ion)

─────────────────────────────────────────────────── --- Continuation of the front page (56) References JP-A-7-74145 (JP, A) JP-A-3-179733 (JP, A) JP-A-5-36644 (JP, A) JP-A-8- 176851 (JP, A) JP 59-131511 (JP, A) JP 61-114532 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/3065 C23C 16 / 50 C23F 4/00 C30B 29/04

Claims (6)

(57) [Claims] 1. A plasma of a first substance that is a reactive gas introduced into a vacuum container is formed, and a second substance that is a reactive gas is decomposed outside the plasma so as to have a density and / or density. composition to generate radicals which are controlled by injecting the generated radicals in the plasma, micro according to the radical control to microfabrication substrate to be processed disposed in the plasma processing
In the method, the second substance is decomposed by heat to generate the radical.
A microfabrication method by radical control, which is characterized in that it is produced . 2. A plasma of a first substance which is a reactive gas introduced into a vacuum container is formed, and a second substance which is a solid material, a liquid material or a combination thereof is decomposed outside the plasma. To generate radicals having a controlled density and / or composition, and injecting the generated radicals into the plasma,
In the microfabrication method by radical control , in which the substrate to be processed arranged in the plasma is microfabricated , the second substance is decomposed by light or electron irradiation, and
Microfabrication method by radical control, characterized in that to generate the serial radical. 3. The microfabrication method according to claim 1 or 2, wherein the plasma of the first substance applies any one of microwave, UHF wave, VHF wave, RF wave and direct current to the substance or electrons. A fine processing method by radical control, which is formed by irradiating a line. 4. A vacuum container including a plasma discharge mechanism, a vacuum exhaust device connected to the vacuum container, and a vacuum generating device connected to the vacuum container, the density and / or composition of which is controlled by including a radical generating mechanism. at least comprising a radical-generating chamber that generates radicals in the radical-generating chamber to decompose the raw material is a reactive gas supplied to the chamber by the radical generating mechanism, caused by the decomposition of the raw material substance density and / Alternatively, in a microfabrication apparatus by radical control configured to transport radicals whose composition has been controlled to the vacuum container and to inject it into the plasma generated by the plasma discharge mechanism, the radical generation mechanism is A microfabrication device by radical control characterized by comprising a heating mechanism . 5. A vacuum container including a plasma discharge mechanism, a vacuum exhaust device connected to the vacuum container, and a vacuum container connected to the vacuum container, the density and / or composition of which is controlled by including a radical generating mechanism. At least a radical generating chamber for generating radicals is provided, and in the radical generating chamber, a raw material that is a solid material, a liquid material or a combination thereof supplied to the chamber is decomposed by the radical generating mechanism, the control of the density and / or composition produced by the decomposition is performed radicals transported to the vacuum vessel, the configured radical controlled so as to inject the plasma that is generated by the plasma discharge mechanism
The microfabrication apparatus according to claim 1, wherein the radical generating mechanism is a light or electron irradiation mechanism . 6. The microfabrication device according to claim 4 or 5, wherein the plasma discharge mechanism is a microwave or UH.
A microfabrication apparatus by radical control, characterized in that a power source for generating any of F wave, VHF wave, RF wave, direct current and electron beam is connected.