JP3379484B2 - High frequency device and method of manufacturing the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency device for transmitting high-frequency signals, such as a phased array antenna used for transmitting and receiving high-frequency signals such as microwaves, and a method for manufacturing the same.

[0002]

2. Description of the Related Art As a high-frequency device, for example, a phased array antenna in which a large number of radiating elements are arranged, which is used for an on-board satellite tracking antenna or an on-board satellite antenna, has been proposed (for example, IEICE Technical Report AP90).
-75 and Japanese Patent Application Laid-Open No. 1-290301). This type of phased array antenna has a function of arbitrarily changing the direction of the beam by changing the phase of feeding to each radiating element. As a means for changing the phase to be fed, a digital phase shifter composed of a plurality of phase shift circuits each having a fixed different phase shift amount is generally used (hereinafter, the digital phase shifter will be referred to as a digital phase shifter). Simply called a phase shifter). Then, in the phased array antenna, each of the phase shift circuits is turned on / off by a 1-bit digital control signal to combine the phase shift amounts of the respective phase shift circuits, so that the phase shifter as a whole has 0 The feeding phase of ˜360 ° is obtained.

Particularly, in the conventional phased array antenna, PI is used as a switching element in each phase shift circuit.
A large number of semiconductor elements such as N diodes and GaAs FETs and drive circuit components for driving these elements are used. The phase shifter is configured to generate a predetermined amount of phase shift by applying a DC current or a DC voltage to these switching elements to turn them on / off and change the transmission path length, susceptance, reflection coefficient, and the like. Has become. On the other hand, in recent years, in the field of low-orbit satellite communication, etc., communication at a high data rate is required due to the expansion of use of the Internet and the spread of multimedia communication. For this reason, it is necessary to increase the antenna gain. Has become. Further, in order to realize communication at a high data rate, it is necessary to expand the transmission bandwidth, and due to lack of frequency resources in the low frequency band, the Ka band (20 GHz)
There is an urgent need to realize an antenna that can be applied in the above high frequency bands.

Specifically, as an antenna of a low-orbit satellite tracking terminal (ground station), for example, a frequency of 30 GHz, an antenna gain of 36 dBi, a beam scanning range: a beam tilt angle of 50 ° from the front is required. ing. In order to realize this with a phased array antenna, first, an opening area of about 0.13 m ² (360 mm × 360 mm) is required. Further, in order to suppress the side lobes, it is necessary to arrange the radiating elements at intervals of about ½ wavelength (around 5 mm at 30 GHz) to avoid the generation of grating lobes.

In addition, in order to make the beam scanning step fine and to suppress the side lobe deterioration due to the quantization error of the digital phase shifter to a low level, the phase shift circuit used in each phase shifter has 4 bits (minimum bit shift). It is desirable that the phase is 22.5 ° or more. The total number of radiating elements and the number of phase-shifting circuit bits used for the phased array antenna satisfying the above conditions are as follows: Number of phase-shifting circuit elements: 72 × 72 = about 5000, Number of phase-shifting circuit bits: 72 × 72 × 4 = It becomes about 20000 bits.

Here, it is intended to realize such a phased array antenna having a high gain and applicable to a high frequency band by the above-mentioned conventional technique, for example, the phased array antenna disclosed in Japanese Patent Laid-Open No. 1-290301 shown in FIG. If so, there were the following problems. That is, in such a conventional phased array antenna, as shown in FIG. 9, one driver circuit formed on the drive circuit board controls each phase shift circuit in each phase shifter. Therefore, it is necessary to individually connect this driver circuit and all the phase shift circuits. Therefore, wiring for the connection is required by the number of radiating elements × the number of phase shift circuit bits, and if the above-mentioned numerical values are applied, 72 radiating elements × 7.
In the two array arrangement, the number of wirings to each phase shift circuit (4 bits) for one column (for 72 radiating elements) is 72 × 4.
= 288.

When such wirings are formed on the same plane, even if the wiring width / wiring interval (L / S) = 50/50 μm, the width of the wiring bundle for one column (for 72 radiating elements) is 0. ．
1 mm × 288 = 28.8 mm. On the contrary,
As described above, in the phased array antenna applicable to the frequency of 30 GHz, the distance between the radiating elements is 5 mm.
Although it is necessary to arrange them in the front and rear, in the conventional technique, the width of the wiring bundle becomes 28.8 mm as described above, and it becomes too thick to be physically arranged.

Here, not only the layer on which the radiating element is formed (radiating element substrate or parasitic element substrate), but if the distributor / combiner and the phase shifter are formed on different layers, the layer forming the phase shifter is formed. Since only the phase shifter can be freely arranged in (1), the above-mentioned arrangement problem can be solved. As described above, the multi-layer structure can realize a phased array antenna applicable to a higher frequency band. Further, in the case of the multi-layer structure, the thickness of each layer is as small as several meters, so that it does not become so thick and the area can be made smaller, which is particularly advantageous when mounting on a satellite.

[0009]

By the way, in the above-mentioned high-frequency device, it is considered to use a minute mechanical switch element (micromachine switch) as a switch element used when switching the phase shift amount of the phase shifter. ing. However, when the multi-layer structure is used as described above, each layer is conventionally filled with a dielectric material. Therefore, the phase shifter formed in the intermediate layer has a micromachine having a movable part. The switch could not be used. That is, conventionally, when a high-frequency device such as a phased array antenna has a multi-layer structure, a micromachine switch cannot be used as an inner layer as a switch element used in a phase shifter, which causes a problem in mounting.

The present invention is to solve such a problem, and uses an electronic component having a movable part such as a micromachine switch as an inner layer in a high frequency device having a high gain and applied to a high frequency band, such as a phased array antenna. The purpose is to improve the implementation efficiency.

[0011]

A high-frequency device of the present invention is a high-frequency device in which a high-frequency circuit is mounted on a multi-layer substrate, and a waveguide for propagating a high-frequency signal formed on an inner-layer substrate of the multi-layer substrate and an inner-layer substrate. It has a high-frequency moving part that is formed on it and is connected to the waveguide to process high-frequency signals by a movable structure, and the height of the waveguide is higher than that of the high-frequency moving part.
Higher frequency and movable between the inner layer substrate and the layer above it
Parts are now mounted. I configured it like this
, The space above the isolation layer is formed by the high waveguide.
The high-frequency movable part operates in this space.

[0012]

[0013]

Further, the high frequency device of the present invention comprises a plurality of waveguides formed on a substrate made of a dielectric material for propagating a high frequency signal, and a switch formed on the substrate for switching connection states of the waveguides. A conductive material having a first isolation layer made of a dielectric material disposed on the substrate, and coupling means formed on the first isolation layer and coupling a high frequency signal onto a predetermined region of the waveguide. High-frequency signal via a coupling means between a coupling layer made of, a second separation layer made of a dielectric material formed on the coupling layer, and a waveguide formed on the second separation layer. And a control means for controlling the operation of the switch. The switch has a fixed electrode fixed on the substrate, a column higher than the fixed electrode, and one end fixed to the column. The other end may extend to above the fixed electrode. Is composed of a moveable electrode, a portion of the waveguide was set to being formed higher than the movable range limit of the movable electrode. With this structure, a space formed between the substrate and the first separation layer is formed by the high waveguide, and the switch controlled by the control means performs connection / disconnection operation in this space. To do.

[0015] While configured as described above, may be configured to phase shifter between the waveguide and the switch was or,
A distributor for introducing a high frequency wave having a desired frequency may be provided in the waveguide.

[0016]

The method of manufacturing a high-frequency device according to the present invention includes the steps of forming a plurality of waveguides for propagating a high-frequency signal on a substrate made of a dielectric material, a fixed electrode on the substrate, and a pillar higher than the fixed electrode. And a step of forming a first layer on the substrate so as to cover the fixed electrode in a state where the upper part of the pillar is exposed, and one end is fixed to the upper part of the pillar and the other end is fixed to the fixed electrode. Forming a movable electrode extending to the first layer on the first layer, forming a second layer on the first layer so as to cover the movable electrode, and waveguides for the first and second layers A step of forming an opening region on a predetermined region of the above step, a step of forming a metal layer on the waveguide in the opening region to form the waveguide in the opening region higher than the upper limit of the movable range of the movable electrode, Removing the second layer and forming a first isolation layer of dielectric material on the substrate. And a step of forming a coupling layer made of a conductive material having coupling means for coupling a high frequency signal on the first separation layer so that the coupling means is arranged on a predetermined region of the waveguide. Forming a second isolation layer made of a dielectric material on the coupling layer, and forming a high frequency component on the second isolation layer to which a high frequency signal is coupled between the waveguide and the waveguide via coupling means. And a step of forming a control means for controlling the operation of the switch.
Since the waveguide is formed in this manner, a space formed between the substrate and the first separation layer is formed between the substrate and the first separation layer due to the switch being connected / disconnected.

[0018] In the manufacture as described above, waveguide and may be configured to phase shifter with a switch, were or, in the waveguide so as to comprise a distributor for introducing a high frequency in a desired frequency May be.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. First Embodiment First, a first embodiment of the present invention will be described. Here, a 30 GHz band phased array antenna will be described as an example of a high frequency device with reference to FIG.
In the first embodiment, as shown in the sectional view of FIG. 1A, the phased array antenna has a multi-layer structure.

That is, first, a plurality of phase shifts for controlling the phase of a high frequency signal using a microstrip line (waveguide) 102a and a micromachine switch (switch) 102b on a substrate 101 made of a dielectric material such as glass. The phase control layer 102 composed of a unit is formed. This micromachine switch 102b is shown in FIG.
As shown in (b), the fixed electrode 121 and the movable electrode 123 supported by the columnar body 122 are provided, and the operation of the movable electrode 123 is controlled by a control means (not shown).
The on / off operation is performed by connecting / disconnecting 21 and the movable electrode 123.

Further, on the phase control layer 102, a coupling layer 103 having a coupling layer (coupling means) 103a and a coupling layer (coupling means) 103a which characterizes the present invention, and a coupling layer (second layer). Radiating element layer 105 on which a plurality of radiating elements are formed is disposed. Further, a parasitic element layer 107 in which a plurality of parasitic elements are formed is disposed on top of this with a separating layer (third separating layer) 106 interposed therebetween. This parasitic element is added for widening the band, and may be configured as necessary.

On the other hand, on the rear surface of the substrate 101, a distribution / synthesis layer 110 composed of a microstrip line or the like is arranged via a coupling layer 108 having a coupling slot 108a and a separation layer (fourth separation layer) 109, A high frequency signal from a power supply unit (not shown) is distributed to each phase shift unit in the upper layer. Furthermore, in the example shown in FIG.
A separation layer 111 made of a dielectric is provided under the distribution / synthesis layer 110.
Ground layer 1 made of a conductor material via (fifth separation layer)
12 are provided. The separation layer 111 and the ground layer 112 are added in order to suppress unnecessary radiation from the distribution / synthesis layer 110, and may be configured as necessary.

Further, as shown in the plan view of FIG. 1C, the phase control layer 102 connects the microstrip lines 102a having different line lengths to the plurality of micromachine switches 10.
It is configured to be switched by 2b. Figure 1 (c)
Indicates one cell portion forming a phased array antenna which is a high frequency device, and signal lines Xi1, X from a signal line selection unit (not shown) are provided on the periphery of the cell.
i2, scanning line Yj1, from the scanning line selection unit (not shown)
Yj2, a trigger signal line Tr from a control device (not shown)
g and a drive power supply line Vdrv for the switch are arranged.

The micromachine switch 102b is driven by the drive circuit (control means) 102c connected to these signal lines. Further, inside these signal lines, the above-mentioned microstrip line 102a is provided.
Are configured to connect from the upper position of the coupling slot 108a to the lower position of the coupling slot 103a. Further, in the middle of the microstrip line 102a, for example, phase shift circuits of 22.5 °, 45 °, 90 °, and 180 ° are configured, and these are switched by the micromachine switch 102b to guide the high frequency wave. The phase is shifted to a desired value.

In the first embodiment, a separation layer (first separation layer) 113 made of a dielectric material is formed between the phase control layer 102 and the layer thereabove, and the separation layer 11 is formed.
3 phase control layer 102 micromachine switch 102
The opening region 113a is provided on the region where b is formed. Here, the separation layer 113 is the phase control layer 10
2 and the bonding layer 103, and the distance between them is about 0.2 mm. That is, the separation layer 113 secures a movable space for the micromachine switch 102b, and the microstrip line 1 is provided.
02a secures a distance at which a high frequency can propagate without any problem.

Here, the overall structure of the phased array antenna will be briefly described. The phased array antenna, as shown in FIG.
On 02, the radiating element layer 105 and the parasitic element layer 107 are arranged. A distribution / synthesis layer 110 is arranged below the phase control layer 102. In such a structure, for example, the radiating element layer 105 is provided with a separation layer 104 in the lower portion, and the coupling layer 1 made of, for example, a thin Cu layer on the lower surface thereof.
03, the coupling layer 103 has coupling slots 103a formed of holes corresponding to the array. Similarly, a coupling layer 108 made of, for example, a thin Cu layer is provided on the back surface of the phase control layer 102, and coupling slots 108a are formed in the coupling layer 108 corresponding to the array.

Among the so arranged, the phase control layer 1
02 is provided with respective phase shift units and wirings X1 to Xm and Y1 to Yn for individually controlling these phase shift units. Then, the high-frequency signal from the power feeding unit propagates to the strip line of the distribution / synthesis layer 110, and this is supplied to each phase shift unit of the phase control layer 102, where a predetermined power feed phase shift amount is given and the coupling layer 103 of the coupling layer 103 is provided. It propagates to each radiating element of the radiating element layer 105 through the coupling slot 103 a, and is radiated from each radiating element in a predetermined beam direction.

Next, a method of manufacturing the phased array antenna (high frequency device) according to the first embodiment will be described. First, the separation layer 113 is formed together with the phase control layer 102 on the substrate 101. The formation of the separation layer 113 will be described by taking the location of the micromachine switch 102b as an example. First, as shown in FIG. 3A, the microstrip line 102a is provided on the substrate 101 and the micromachine switch 102b shown in FIG.
The fixed electrode 121 constituting the above is formed.

Next, as shown in FIG. 3B, a column body 122 is formed on the end of the microstrip line 102a which is paired with the fixed electrode 121. Next, as shown in FIG. 3C, with the upper surface of the columnar body 122 exposed, a dielectric film 301 made of, for example, polyimide so as to cover other regions.
To form. Next, as shown in FIG. 3D, the movable electrode 123 is provided at a predetermined position of the dielectric film 301 so that one end is in contact with the entire upper surface of the column 122 and the other end is extended above the fixed electrode 121. Form.

Next, as shown in FIG. 3E, a dielectric film 302 made of, for example, polyimide is formed on the dielectric film 301 including the movable electrode 123. Next, the dielectric film 3
02 on the inorganic insulating film 30 made of, for example, silicon oxide
3 is formed. Next, on the inorganic insulating film 303, an opening 304a is formed in a region where the movable electrode 123 described above is formed.
A resist pattern 304 having Next, using the resist pattern 304 as a mask, the inorganic insulating film 303 is selectively etched, and then the resist pattern 304 is used.
By removing, the openings 303a are formed in the inorganic insulating film 303 as shown in FIG.

Next, the lower dielectric film 302 and the dielectric film 301 are selectively etched by using the inorganic insulating film 303 having the opening 303a as a mask,
As shown in FIG. 3I, the opening 302 through which the region for forming the micromachine switch 102b is exposed in the dielectric film 302.
a, 301a is formed. Further, since the dielectric film 301 under the opening 303a is simultaneously removed, the movable electrode 123
A space is formed in the lower part, and the fixed electrode 121, the pillar 122,
Micromachine switch 102 including movable electrode 123
b is completed. Then, by selectively removing only the inorganic insulating film 303, the dielectric films 301, 3 shown in FIG.
The separation layer 113 having the opening region 113a made of 02 and the opening portions 301a and 302a is formed on the substrate 101 as shown in FIG. 4A.

On the other hand, as shown in FIG. 4B, first, a copper film is formed on the isolation layer 109 made of a dielectric material, and the copper film is patterned to form the coupling slot 108a on the isolation layer 109. To form a bonding layer 108. Also,
By forming a conductive material film such as gold on the separation layer 111 made of a dielectric material and patterning the film, the separation layer 1 is formed.
A distribution / synthesis layer 110 is formed on the surface 11. Also, the separation layer 1
A ground layer 112 is formed on the back surface of 11. Also, the separation layer 1
The rear surface of 09 and the surface of the separation layer 111 on which the distribution / synthesis layer 110 is formed are brought into contact with each other and bonded to each other to form an integrated structure. Then, the surface of the bonding layer 108 of the integrated structure and the substrate 10
1 the back surface is contacted via the adhesive film 401, and is heated in a state where a predetermined pressure is applied. As shown in FIG. 4C, the surface of the bonding layer 108 is bonded to the back surface of the substrate 101. To do.

Next, a conductive film made of, for example, Cu is formed on the back surface of the separation layer 104 made of a dielectric, and this is patterned to form a coupling slot 1 on the back surface of the separation layer 104.
The bonding layer 103 with 03a is formed. Further, the radiating element layer 105 is formed on the surface of the separation layer 104. In addition, the parasitic element layer 107 is formed on the separation layer 106, and the separation layer 104 and the separation layer 106 are attached to each other to form an integrated structure. Then, as shown in FIG. 4D, the integrated structure is fixedly arranged on the separation layer 113, so that the radiating element layer 105 and the parasitic element layer 107 are arranged on the phase control layer 102. Is formed.

Second Embodiment Next, a second embodiment of the present invention will be described.
Also in the second embodiment, as shown in the cross-sectional view of FIG. 5, the phased array antenna has a multilayer structure. That is,
First, the phase control layer 502 including a plurality of phase shift units including the microstrip line 502a and the micromachine switch 502b is formed on the back surface of the substrate 501 made of a dielectric material such as glass.
The micromachine switch 502b is the same as in the first embodiment described above.

Further, on the phase control layer 502, a coupling layer 503 having a coupling slot 503a and a separation layer 5 are provided.
04, the parasitic element layer 507 in which a plurality of parasitic elements are formed is arranged. This parasitic element is added for widening the band, as in the first embodiment, and may be configured as necessary. The thickness between the phase control layer 502 and the coupling layer 503 is about 0.1.
A separation layer 513 made of a dielectric material and having a thickness of about mm is provided.

On the other hand, on the rear surface of the substrate 501, a distribution / synthesis layer 510 composed of a microstrip line or the like is arranged via a coupling layer 508 having a coupling slot 508a and a separation layer 509. The high frequency signal of is distributed to each phase shift unit in the upper layer. Further, in the example shown in FIG. 5, the distribution synthesizing layer 510
A ground layer 512 made of a conductive material is provided under the insulating layer 511 made of a dielectric material. The separation layer 511 and the ground layer 512 are added in order to suppress unnecessary radiation from the distribution / combination layer 510, and may be configured as necessary.

Further, as shown in FIG. 5B, the phase control layer 502 is configured so that the line length of the microstrip line 502a is switched by a phase shift circuit 502c composed of a plurality of micromachine switches 502b. FIG. 5B shows one cell portion forming a phased array antenna which is a high-frequency device, and a signal line Xi from a signal line selection unit (not shown) is provided around the cell.
1, Xi2, scanning line Y from a scanning line selection unit (not shown)
j1, Yj2, a trigger signal line Trg from a control device (not shown), and a drive power supply line Vdrv of the switch are arranged.

The micromachine switch 502b is driven by the drive circuit (control means) 502d connected to these signal lines. Further, inside these signal lines, the above-mentioned microstrip line 502a is provided.
Are configured to connect from the upper position of the coupling slot 508a to the lower position of the coupling slot 503a. Further, in the middle of the microstrip line 502a, for example, phase shift circuits 502c of 22.5 °, 45 °, 90 ° and 180 ° are configured, and these are switched by the micromachine switch 502b and guided high frequency waves. The phase of is shifted to a desired value.

In the second embodiment, in the phase control layer 502, the microstrip line 502a (the black-painted portion in FIG. 5B), which serves as a transmission line for high-frequency signals, is formed thick, so that the micromachine is formed. A space is provided below the separation layer 513 on the area where the switch 502b is formed. Here, the height of the space formed by the microstrip line 502a is set to about 0.1 mm.

The phase control layer 5 having such an arrangement is shown.
02 is provided with respective phase shift units and wirings X1 to Xm and Y1 to Yn for individually controlling these phase shift units. Then, the high-frequency signal from the power feeding unit propagates to the strip line of the distribution / combining layer 510, and is supplied to each phase shift unit of the phase control layer 502, where a predetermined power feeding phase shift amount is given and the coupling layer 503 has a predetermined amount. It propagates to each radiating element of the radiating element layer 505 through the coupling slot 503a, and is emitted from each radiating element in a predetermined beam direction.

Next, a method of manufacturing the phased array antenna (high frequency device) according to the second embodiment will be described. First, the phase control layer 502 is formed on the substrate 501. Here, in particular, the micromachine switch 502b
The following section will be used as an example. First, as shown in FIG. 6A, a microstrip line 50 is formed on a substrate 501.
2a together with the micromachine switch 5 shown in FIG.
The fixed electrode 521 forming 02b is formed.

Next, as shown in FIG. 6B, a column body 522 is formed on the end of the microstrip line 502a which is paired with the fixed electrode 521. Next, as shown in FIG. 6C, with the upper surface of the columnar body 522 exposed, a dielectric film 601 made of, for example, polyimide so as to cover other regions.
To form. Next, as shown in FIG. 6D, the movable electrode 523 is provided at a predetermined position of the dielectric film 601 so that one end is in contact with the entire upper surface of the columnar body 522 and the other end is extended above the fixed electrode 521. Form.

Next, as shown in FIG. 6E, a dielectric film 602 made of, for example, polyimide is formed on the dielectric film 601 including the movable electrode 523. Next, the dielectric film 6
02 on the inorganic insulating film 60 made of, for example, silicon oxide
3 is formed. Next, the resist pattern 6 is formed on the inorganic insulating film 603 except on the microstrip line 502a (the black portion in FIG. 5B) shown in FIG. 5B.
To form 04. Next, using the resist pattern 604 as a mask, the inorganic insulating film 603 is selectively etched,
Then, by removing the resist pattern 604, the pattern shown in FIG.
As shown in (h), the microstrip line 502a
A hard mask 603a whose upper region is open is formed.

Next, by selectively etching the lower dielectric film 602 and the dielectric film 601 using the hard mask 603a as a mask, as shown in FIG. 6 (i), a region on the microstrip line 502a is formed. The dielectric films 601 and 602 are formed in a state where the film is open. Then, as shown in FIG. 7 (j), by way of example Ebamekki method,
A metal layer made of a metal such as copper is formed only on the exposed microstrip line 502a to thicken the microstrip line 502a. Then, the dielectric film 6
02 and the dielectric film 601 are removed together with the hard mask 603a to complete the micromachine switch 502b including the fixed electrode 521, the pillar 522, and the movable electrode 523 as shown in FIG. 8A. Then, with the completion of the microphone Sumashin switch 502a, a state in which the microstrip line 502a is formed thick so that the movable space of the movable electrode 523 is provided above them can be obtained.

On the other hand, as shown in FIG. 8B, first, a copper film is formed on the isolation layer 509 made of a dielectric material, and the copper film is patterned to form a coupling slot 508a on the isolation layer 509. To form a bonding layer 508. Also,
A conductive material film such as gold is formed on the separation layer 511 made of a dielectric material, and the film is patterned to form the separation layer 5
A distribution / synthesis layer 510 is formed on the surface 11. Also, the separation layer 5
A ground layer 512 is formed on the back surface of 11. Also, the separation layer 5
The back surface of 09 and the surface of the separation layer 511 on which the distribution / synthesis layer 510 is formed are brought into contact with each other and bonded to each other to form an integrated structure. Then, the surface of the bonding layer 508 of the integrated structure and the substrate 50
1 back surface is contacted via an adhesive film 801, and is heated in a state where a predetermined pressure is applied, and as shown in FIG. 8C, the bonding layer 508 front surface is bonded to the back surface of the substrate 501. To do.

Next, a conductive film made of, for example, Cu is formed on the back surface of the separation layer 504 made of a dielectric material, and is patterned to form a coupling slot 5 on the back surface of the separation layer 504.
The bonding layer 503 with 03a is formed. Further, a radiating element layer 505 is formed on the surface of the separation layer 504. Further, the parasitic element layer 507 is formed over the separation layer 506, and the separation layer 504 and the separation layer 506 are attached to form an integrated structure. Then, by fixing these integrated structures on the separation layer 513, as shown in FIG. 5A, a multi-layer structure in which the radiating element layer 505 and the parasitic element layer 507 are arranged on the phase control layer 502. The structure is formed.

In the first and second embodiments described above, a phased array antenna having a multi-layered structure is exemplified as the high frequency device, and the structure and the manufacturing method of the case where the switch having the movable portion is mounted on the inner layer are described. However, the high frequency device of the present invention is not limited to the phased array antenna. For example, it can be applied to a high frequency receiving circuit in which a large number of high frequency small relays are mounted as many high frequency movable parts on the inner layer of the multi-layer substrate and a large number of high frequency receiving signals are selectively switched and received as in diversity reception. It can also be applied to a high-frequency transmission circuit that switches a high-frequency small relay mounted as a high-frequency movable component in an inner layer of a multi-layer substrate to turn on or off the output of a high-frequency amplifier.

[0048]

As described in the foregoing, in the present invention, examples
For example, in a high-frequency device in which a high-frequency circuit is mounted on a multi-layer substrate, a waveguide for propagating a high-frequency signal formed on the inner-layer substrate of the multi-layer substrate and a waveguide formed on the inner-layer substrate for connection with the movable structure are provided. It is equipped with a high-frequency moving part that processes high-frequency signals, and the height of the waveguide is the height of the high-frequency moving part.
It is higher and allows high frequencies between the inner layer substrate and the layers above it.
The moving parts are now mounted. With this structure, a space formed above the separation layer is formed by the high waveguide, and a high-frequency movable component such as a switch operates in this space. As a result, according to this high-frequency device , an excellent effect that a high-frequency movable component such as a switch can be used in a high-frequency device such as a phased array antenna having a high gain and applied to a high frequency band is obtained.

[0049]

[0050]

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a partial configuration of a phased array antenna as a high frequency device according to a first embodiment of the present invention.

2A and 2B are a perspective view and a cross-sectional view showing the configuration of the high-frequency device according to the first embodiment.

FIG. 3 is a process diagram showing a manufacturing process of the high-frequency device according to the first embodiment.

FIG. 4 is a process drawing showing the manufacturing process following FIG.

FIG. 5 is a sectional view showing a partial configuration of a phased array antenna as a high frequency device according to a second embodiment of the present invention.

FIG. 6 is a process diagram showing a manufacturing process of the high-frequency device according to the second embodiment.

FIG. 7 is a process drawing showing the manufacturing process following FIG. 6;

FIG. 8 is a process drawing showing the manufacturing process following FIG. 7.

FIG. 9 is a perspective view showing a simple configuration of a conventional phased array antenna.

[Explanation of symbols]

101 ... Substrate, 102 ... Phase control layer, 102a ... Microstrip line, 102b ... Micromachine switch, 103 ... Coupling layer, 103a ... Coupling slot, 10
4, 106, 109, 111 ... Separation layer, 105 ... Radiating element layer, 107 ... Parasitic element layer, 108 ... Coupling slot,
110 ... Distribution composite layer, 112 ... Ground layer, 113 ... Separation layer (first separation layer), 113a ... Opening region, 121 ... Fixed electrode, 122 ... Pillar, 123 ... Movable electrode.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI H01Q 23/00 H01Q 23/00 (72) Inventor Hideki Kusamitsu 5-7-1 Shiba, Minato-ku, Tokyo NEC Corporation (72) Inventor Kenichiro Suzuki 5-7 Shiba 5-chome, Minato-ku, Tokyo, NEC Corporation (56) References JP-A-11-74717 (JP, A) JP-A-6-223686 (JP, A) (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01P 1/12 H01Q 3/00-3/46 H01H 36/00

Claims (7)

(57) [Claims] 1. A high-frequency device in which a high-frequency circuit is mounted on a multi-layer substrate, wherein a waveguide for transmitting a high-frequency signal is formed on the inner-layer substrate of the multi-layer substrate, and the waveguide is formed on the inner-layer substrate. A high-frequency movable component that is connected and processes the high-frequency signal by a movable structure
And the height of the waveguide is higher than the height of the high-frequency movable component.
Is, the high-frequency moving parts between the layer above it and the inner layer board
A high-frequency device characterized by being implemented . 2. A high circumference formed on a substrate made of a dielectric material.
A plurality of waveguides that propagate a wave signal and a connection state of the waveguides formed on the substrate.
A switch for switching and a first isolation made of a dielectric material disposed on the substrate
A layer and a predetermined region of the waveguide formed on the first separation layer.
Conductive material with coupling means for coupling high frequency signals on the field
And a second layer of dielectric material formed on the tie layer.
A separation layer and a front surface formed between the separation layer and the waveguide formed on the second separation layer.
High-frequency component in which high-frequency signals are coupled via the coupling means
When the control means and a said switch for controlling the operation of said switch, a fixed electrode fixed on the substrate,
The column higher than this fixed electrode and one end fixed to this column
The other end extends to the upper part of the fixed electrode and is movable.
A movable electrode, and a part of the waveguide is higher than a movable range upper limit of the movable electrode.
A high-frequency device characterized by being formed well . 3. The high frequency device according to claim 1, wherein the waveguide and the switch constitute a phase shifter . 4. The high-frequency device according to claim 2, wherein the distributor introduces a high-frequency wave of a desired frequency into the waveguide.
A high-frequency device characterized by being provided . 5. A high frequency signal is transmitted on a substrate made of a dielectric material.
A step of forming a plurality of waveguides to be carried, a fixed electrode on the substrate, and a column higher than the fixed electrode.
The step of forming and the fixed electrode with the upper part of the pillar exposed on the substrate.
Forming a first layer to cover the poles, one end fixed to the top of the pillar and the other end fixed electrode
Forming a movable electrode extending up to above on the first layer
And a second layer on the first layer so as to cover the movable electrode.
Forming step and opening on the predetermined region of the waveguide of the first and second layers.
Forming a mouth region, forming a metal layer on the waveguide in the opening region, and
The waveguide within the opening region is set to the upper limit of the movable range of the movable electrode.
Forming higher, removing the first and second layers, and forming a first isolation layer of dielectric material on the substrate
And a conductive material provided with a coupling means for coupling high frequency signals.
The coupling layer on the predetermined region of the waveguide.
Forming on the first separation layer so as to be arranged in
And forming a second separation layer made of a dielectric material on the coupling layer.
And a high-frequency signal is transmitted between the waveguide and the waveguide through the coupling means.
Forming high frequency components to be bonded on the second isolation layer
And forming a control means for controlling the operation of the switch
And a method of manufacturing a high-frequency device , comprising: 6. The method of claim 5 <br/> Oite to the manufacturing method of the high-frequency device according method of manufacturing a high-frequency device characterized by constituting the phase shifter between the waveguide and the switch. 7. A billing manufacturing method <br/> Oite high-frequency device of claim 5, wherein the high frequency, characterized in that the distributor Ru equipped <br/> introducing a high frequency of desired frequency to the waveguide Device manufacturing method .