JP3381328B2 - Manufacturing method of ITO sintered body - Google Patents
Manufacturing method of ITO sintered bodyInfo
- Publication number
- JP3381328B2 JP3381328B2 JP22588793A JP22588793A JP3381328B2 JP 3381328 B2 JP3381328 B2 JP 3381328B2 JP 22588793 A JP22588793 A JP 22588793A JP 22588793 A JP22588793 A JP 22588793A JP 3381328 B2 JP3381328 B2 JP 3381328B2
- Authority
- JP
- Japan
- Prior art keywords
- sintering
- pressure
- density
- sintered body
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Compositions Of Oxide Ceramics (AREA)
- Ceramic Products (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
【0001】
【産業上の利用分野】本発明は、透明導電膜製造の際に
使用されるITOスパッタリングターゲット用複合酸化
物焼結体の製造に関するものである。
【0002】
【従来の技術】ITO(Indium Tin Oxi
de)薄膜は高導電性、高透過率といった特徴を有し、
更に微細加工も容易に行えることから、フラットパネル
ディスプレイ用表示電極、太陽電池用窓材、帯電防止膜
等の広範囲な分野に渡って広く用いられている。特に液
晶表示装置を始めとしたフラットパネルディスプレイ分
野では近年大型化および高精細化が進んでおり、その表
示用電極であるITO薄膜に対する需要もまた急速に高
まっている。
【0003】このようなITO薄膜の製造方法はスプレ
ー熱分解法、CVD法等の化学的成膜法と電子ビーム蒸
着法、スパッタリング法等の物理的成膜法に大別するこ
とができる。中でもスパッタリング法は大面積化が容易
で且つ高性能の膜が得られる成膜法であることから、様
々な分野で使用されている。スパッタリング法によりI
TO薄膜を製造する場合、スパッタリングターゲットと
しては金属インジウムおよび金属スズからなる合金ター
ゲット(以降ITターゲットと略する)あるいは酸化イ
ンジウムと酸化スズからなる複合酸化物ターゲット(以
降ITOターゲットと略する)が用いられる。しかしI
TOターゲットはITターゲットと比較して得られた膜
の抵抗値および透過率の経時変化が少なく成膜条件のコ
ントロールが容易であるため、ITO薄膜用ターゲット
の主流となっている。
【0004】このようなITOターゲット用酸化物焼結
体としては、通常酸化インジウム粉末と酸化スズ粉末あ
るいはITO粉末を常温でプレス成形もしくは鋳込成形
により成形し、これを大気中あるいは常圧酸素雰囲気中
1300〜1700℃で焼結させたものが用いられてき
た。
【0005】ITO薄膜をスパッタリング法により製造
する場合、ターゲットの焼結密度が高くなると、
成膜速度が増加する。
膜中欠陥の原因となるパーティクルの発生が押さえら
れる。
ターゲット寿命が長くなる。
等の利点がある。このため、一般に高密度のITOター
ゲットが強く望まれてきた。
【0006】
【発明が解決しようとする課題】ITOの焼結を行う場
合、成形体中に含まれる酸化スズは温度の上昇と共に次
式に示す反応を起こし蒸発凝縮機構の焼結挙動を示すの
で焼結性が悪く、その結果ITOの焼結そのものを阻害
することが知られている。
【0007】
SnO2(s)=SnO(g)+1/2O2(g)
その結果、大気中焼結等の通常の焼結法では一般的なS
nO2の含有量10wt%のITOの場合においてもそ
の焼結密度は5.7g/cm3程度に過ぎず焼結密度を
上げられないという問題点があった。
【0008】このような問題点を解決する手段として、
焼結を酸素雰囲気中の加圧状態で行う酸素加圧焼結法
(例えば、特開平3−207858号公報など)が提案
されている。この方法では焼結を加圧状態で行うため、
焼結を阻害する原因である酸化スズの蒸発が押さえら
れ、高密度の焼結体を得ることができる。しかしこの方
法を用いた場合でも、高焼結密度の焼結体を得るために
は炉内圧力を9.9気圧という高い圧力にしなければな
らなかった。そのため焼結装置の構造を気密性の高い耐
圧容器としなければならず、装置構造が複雑となり、装
置コストを下げられないという問題点があった。また高
圧プロセスによる生産は安全性の点で問題があり、更に
生産性を上げにくいという問題点があった。
【0009】本発明の課題は、酸素雰囲気中におけるI
TOの加圧焼結において、焼結密度の高い焼結体を安価
に安全性を保ちながら生産性良く得ることを可能にする
ことにある。
【0010】
【課題を解決するための手段】本発明者らは上述のよう
な現状に鑑み、鋭意検討を重ねた結果、酸素雰囲気中の
加圧状態でITOの焼結を実施するに際し、加圧を開始
する温度を800℃以上とすることにより容易に焼結密
度を上げることができる事実を見出し、本発明を完成す
るに至った。
【0011】すなわち本発明は、酸化インジウムと酸化
スズとからなる粉末を常温でプレス成形もしくは鋳込成
形により成形した成形体を酸素雰囲気中で加圧焼結する
に際して、加圧を開始する温度を800℃以上とするこ
とを特徴とするITO焼結体の製造方法に関する。
【0012】以下、本発明を詳細に説明する。
【0013】本発明でいう酸化インジウムと酸化スズと
からなる粉末とは、所定量の酸化インジウム粉末および
酸化スズ粉末をボールミル等により混合して得られた混
合粉末、および共沈法あるいはインジウム/スズ合金を
酸化することにより得られた所定量の酸化スズを含むI
TO粉末を意味する。酸化スズの混合割合としてはスパ
ッタリングを行なう条件等によって異なるものの、一般
的には製造されたITO膜の抵抗値が低下する5〜15
wt%程度が好ましい。また粉末の混合方法としては乾
式法あるいは湿式法等の混合方法が適宜使用可能であ
る。
【0014】このようにして製造した混合粉末を成形し
て成形体を得る。成型方法としては、プレス成形或いは
鋳込み成形等を例示することができる。プレス成形によ
り成形体を製造する場合には所定の大きさの金型に混合
粉末を充填した後、プレス機を用いて100〜300k
g/cm2の圧力でプレスを行い成形体を製造する。そ
の後、必要に応じて成形体密度を上昇させるために更に
1〜5ton/cm2の圧力でCIP処理を行ってもよ
い。一方、鋳込み成形により成形体を製造する場合には
原料粉を水、バインダーおよび分散剤と共に混合してス
ラリー化させ、こうして得られた50〜5000センチ
ポイズの粘度を持つスラリーを鋳込み成形用の型の中へ
注入して成形体を製造する。鋳込み成形により得られた
成形体中には水分、バインダーおよび分散剤が含まれて
いるので、これらを除去するために300〜500℃の
温度で5〜20時間程度の乾燥処理および脱バインダー
処理を適宜行う必要がある。こうして得られた成形体は
プレス成形体の場合と同様に1〜5ton/cm2の圧
力でCIP処理を施してより密度の高い成形体としても
よい。
【0015】次にこのようにして得られた成形体を加圧
焼結炉内に投入して焼結を行う。炉内に成形体をセット
した後、炉内を一旦排気し次に酸素ガスを導入して圧力
を大気圧(ゲージ圧で0気圧)とする。この状態で昇温
を開始する。この際、昇温速度を上げ過ぎると熱衝撃に
より成形体にクラックが発生することがあるので、昇温
速度は100℃/Hr以下とすることが好ましい。昇温
を開始すると炉内の酸素ガスは熱膨張により体積が増大
するので、炉内圧力を大気圧に保つように適宜圧力を調
節する必要がある。炉内温度が少なくとも800℃の温
度に達したところで酸素ガスを更に導入し加圧を開始す
る。本発明によれば800℃以上の温度で加圧を開始す
ることにより十分な密度向上効果が現れるが、さらに好
ましくは1100℃以上の温度から加圧を開始すること
が望ましい。一旦加圧を開始した後はプロセスがが終了
するまでその圧力を保持するようにする。また酸素ガス
は加圧開始後からプロセス終了時まで連続的に供給する
ことが望ましい。焼結温度としては1300〜1700
℃が好適である。焼結温度が1300℃未満になると酸
化インジウム中への酸化スズの固溶が進行しないため焼
結密度が上昇しなくなったり、逆に焼結温度が1700
℃を越えると成形体が周囲の炉材と反応を起こし始める
ため焼結炉を破損する恐れがある。焼結時間としては十
分に焼結密度を高めるために3時間以上とすることが望
ましい。焼結時の炉内圧力は焼結体に対する十分な密度
上昇効果を得る為、1.5気圧以上(絶対圧)であるこ
とが望ましい。
【0016】以上のような方法により製造されたITO
焼結体は、従来の常温より加圧を開始する焼結法により
製造された焼結体に比べて低い加圧圧力で高い焼結密度
を示す。
【0017】
【実施例】以下、本発明を実施例をもって更に詳細に説
明するが、本発明はこれらに限定されるものではない。
【0018】実施例1
酸化インジウム粉末180g(純度99.99%)と酸
化スズ粉末20g(純度99.99%)を容量2Lのボ
ールミル用ポットに入れ、これに直径10mmのナイロ
ンボール1kgを加え、回転数50rpmで5時間乾式
ボールミル混合を行った。次に得られた混合粉末32g
を30mm角のプレス用金型の中へ入れ、プレス圧力3
00kg/cm2でプレスして30mm角で厚さ11.
5mmの成形体を製造した。次にこの成形体に3ton
/cm2の圧力でCIP処理を施した。得られた成形体
の成形体密度は4.3g/cm3であった。次にこの成
形体を酸素加圧焼結炉中に投入して焼結を行った。焼結
条件は次の通りとした。
【0019】(焼結条件)
焼結温度:1600℃
昇温速度:100℃/Hr
焼結圧力:4.5atm(ゲージ圧:3.5atm)
焼結時間:10時間
加圧開始温度:1150℃
酸素ガス流量:350ml/min.(炉内容積の2
%)
上記の条件により製造した焼結体の焼結密度をアルキメ
デス法により測定した所、焼結密度は6.7g/cm3
であった。
【0020】実施例2
実施例1に記載したのと同様の方法を用いて30mm角
で厚さ11.5mmの成形体を製造し、この成形体を酸
素加圧炉に投入して次の焼結条件で焼結を実施した。
【0021】(焼結条件)
焼結温度:1600℃
昇温速度:100℃/Hr
焼結圧力:6.0atm(ゲージ圧:5.0atm)
焼結時間:10時間
加圧開始温度:1300℃
酸素ガス流量:350ml/min.(炉内容積の2
%)
上記の条件により製造した焼結体の焼結密度をアルキメ
デス法により測定した所、焼結密度は6.9g/cm3
であった。
【0022】比較例1
実施例1に記載したのと同様の方法を用いて30mm角
で厚さ11.5mmの成形体を製造し、この成形体を酸
素加圧炉に投入して次の焼結条件で焼結を実施した。
尚、加圧は室温より開始しその圧力をプロセス終了時ま
で保持した。
【0023】(焼結条件)
焼結温度:1600℃
昇温速度:100℃/Hr
焼結圧力:6.0atm(ゲージ圧:5.0atm)
焼結時間:10時間
酸素ガス流量:350ml/min.(炉内容積の2
%)
上記の条件により製造した焼結体の焼結密度をアルキメ
デス法により測定した所、焼結密度は6.5g/cm3
であった。
【0024】比較例2
実施例1に記載したのと同様の方法を用いて30mm角
で厚さ11.5mmの成形体を製造し、この成形体を酸
素加圧炉に投入して次の焼結条件で焼結を実施した。
【0025】(焼結条件)
焼結温度:1600℃
昇温速度:100℃/Hr
焼結圧力:4.5atm(ゲージ圧:3.5atm)
焼結時間:10時間
加圧開始温度:700℃
酸素ガス流量:350ml/min.(炉内容積の2
%)
上記の条件により製造した焼結体の焼結密度をアルキメ
デス法により測定した所、焼結密度は6.4g/cm3
であった。
【0026】
【発明の効果】本発明によれば、焼結を酸素雰囲気中加
圧状態で行う際に、加圧を開始する温度を800℃以上
とすることにより、焼結過程において形成される微細な
閉気孔が焼結体中より効果的に消失する為高密度の焼結
体を得ることができる。従って焼結を行う際の炉内圧力
が従来よりも低い圧力の場合においても十分な密度上昇
効果を得ることが可能となり焼結密度の高い焼結体を安
全に効率良く生産することが可能となる。
【0027】Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the production of a composite oxide sintered body for an ITO sputtering target used in producing a transparent conductive film. 2. Description of the Related Art ITO (Indium Tin Oxi)
de) The thin film has characteristics such as high conductivity and high transmittance,
Further, since fine processing can be easily performed, it is widely used in a wide range of fields such as display electrodes for flat panel displays, window materials for solar cells, and antistatic films. In particular, in the field of flat panel displays such as liquid crystal display devices, in recent years, the size and definition have been advanced, and the demand for ITO thin films as display electrodes has been rapidly increasing. The method of producing such an ITO thin film can be roughly classified into a chemical film forming method such as a spray pyrolysis method and a CVD method, and a physical film forming method such as an electron beam evaporation method and a sputtering method. Above all, the sputtering method is used in various fields because it is a film forming method that can easily increase the area and obtain a high-performance film. I by sputtering method
In the case of manufacturing a TO thin film, an alloy target composed of metal indium and tin (hereinafter abbreviated as IT target) or a composite oxide target composed of indium oxide and tin oxide (hereinafter abbreviated as ITO target) is used as a sputtering target. Can be But I
The TO target is the mainstream of ITO thin film targets because the resistance and transmittance of the film obtained as compared with the IT target are less changed with time and the control of film forming conditions is easy. As such an oxide sintered body for an ITO target, an indium oxide powder and a tin oxide powder or an ITO powder are usually formed by press molding or casting at room temperature, and this is formed in the air or in an oxygen atmosphere at normal pressure. A medium sintered at 1300 to 1700 ° C. has been used. In the case where an ITO thin film is manufactured by a sputtering method, as the sintering density of a target increases, the film forming rate increases. Generation of particles that cause defects in the film is suppressed. The target life is extended. There are advantages such as. For this reason, a high-density ITO target has generally been strongly desired. [0006] When sintering ITO, tin oxide contained in the molded body undergoes a reaction represented by the following equation with an increase in temperature, and shows the sintering behavior of the evaporative condensation mechanism. It is known that the sinterability is poor and, as a result, sintering of ITO itself is hindered. SnO 2 (s) = SnO (g) + / O 2 (g) As a result, in general sintering methods such as sintering in the air, S
Even in the case of ITO having an nO 2 content of 10 wt%, the sintering density is only about 5.7 g / cm 3 , and there is a problem that the sintering density cannot be increased. As a means for solving such a problem,
An oxygen pressure sintering method in which sintering is performed in a pressurized state in an oxygen atmosphere (for example, Japanese Patent Application Laid-Open No. 3-207858) has been proposed. In this method, sintering is performed under pressure,
Evaporation of tin oxide, which is a cause of inhibiting sintering, is suppressed, and a high-density sintered body can be obtained. However, even in the case of using this method, the furnace pressure had to be as high as 9.9 atm in order to obtain a sintered body having a high sintering density. Therefore, the structure of the sintering apparatus must be a pressure-tight container with high airtightness, and the apparatus structure is complicated, and there is a problem that the apparatus cost cannot be reduced. Further, production by the high-pressure process has a problem in terms of safety, and further has a problem that it is difficult to increase productivity. [0009] An object of the present invention is to solve the problem of I
An object of the present invention is to enable a sintered body having a high sintering density to be obtained inexpensively with good productivity while maintaining safety in pressure sintering of TO. Means for Solving the Problems In view of the above-mentioned current situation, the present inventors have conducted intensive studies and as a result, have found that when sintering ITO in a pressurized state in an oxygen atmosphere, additional processing is required. The inventors have found that the sintering density can be easily increased by setting the temperature at which the pressure is started to 800 ° C. or higher, and have completed the present invention. That is, according to the present invention, when pressure-sintering a compact formed by press-molding or casting at room temperature of a powder comprising indium oxide and tin oxide under pressure in an oxygen atmosphere, the temperature at which pressurization is started is determined. The present invention relates to a method for producing an ITO sintered body, wherein the temperature is 800 ° C. or higher. Hereinafter, the present invention will be described in detail. The powder of indium oxide and tin oxide referred to in the present invention is a mixed powder obtained by mixing predetermined amounts of indium oxide powder and tin oxide powder by a ball mill or the like, and a coprecipitation method or indium / tin powder. I containing a predetermined amount of tin oxide obtained by oxidizing the alloy
Means TO powder. Although the mixing ratio of tin oxide varies depending on the sputtering conditions and the like, generally, the resistance of the manufactured ITO film is reduced by 5 to 15%.
It is preferably about wt%. As a method for mixing the powder, a mixing method such as a dry method or a wet method can be appropriately used. [0014] The mixed powder thus produced is molded to obtain a molded body. Examples of the molding method include press molding and cast molding. In the case of producing a molded body by press molding, after filling the mixed powder into a mold of a predetermined size, 100 to 300 k using a press machine.
Pressing is performed at a pressure of g / cm 2 to produce a molded body. Thereafter, if necessary, a CIP treatment may be further performed at a pressure of 1 to 5 ton / cm 2 to increase the density of the compact. On the other hand, when a molded body is manufactured by casting, the raw material powder is mixed with water, a binder and a dispersant to form a slurry, and the slurry having a viscosity of 50 to 5000 centipoise is cast into a mold for casting. It is poured into the mold to produce a molded article. Since the molded body obtained by the casting contains water, a binder and a dispersant, a drying treatment and a debinding treatment at a temperature of 300 to 500 ° C. for about 5 to 20 hours are performed to remove these. It is necessary to perform it appropriately. The molded body thus obtained may be subjected to a CIP treatment at a pressure of 1 to 5 ton / cm 2 in the same manner as in the case of the press molded body to obtain a molded body having a higher density. Next, the compact thus obtained is put into a pressure sintering furnace and sintered. After setting the compact in the furnace, the inside of the furnace is once evacuated and then oxygen gas is introduced to bring the pressure to atmospheric pressure (gauge pressure: 0 atm). In this state, heating is started. At this time, if the heating rate is too high, cracks may occur in the molded body due to thermal shock. Therefore, the heating rate is preferably 100 ° C./Hr or less. When the temperature rise is started, the volume of the oxygen gas in the furnace increases due to thermal expansion. Therefore, it is necessary to appropriately adjust the pressure so as to keep the furnace pressure at atmospheric pressure. When the temperature in the furnace reaches at least 800 ° C., oxygen gas is further introduced to start pressurization. According to the present invention, by starting pressurization at a temperature of 800 ° C. or higher, a sufficient density improving effect appears, but it is more preferable to start pressurization at a temperature of 1100 ° C. or higher. Once pressurization is started, the pressure is maintained until the process is completed. It is desirable that oxygen gas be continuously supplied from the start of pressurization to the end of the process. The sintering temperature is 1300-1700
C is preferred. If the sintering temperature is lower than 1300 ° C., the solid solution of tin oxide in indium oxide does not progress, so that the sintering density does not increase.
When the temperature exceeds ℃, the molded body starts reacting with the surrounding furnace material, so that the sintering furnace may be damaged. The sintering time is desirably 3 hours or more in order to sufficiently increase the sintering density. The pressure in the furnace at the time of sintering is desirably 1.5 atmospheres or more (absolute pressure) in order to obtain a sufficient density increasing effect on the sintered body. The ITO manufactured by the above method
The sintered body exhibits a higher sintering density at a lower pressurized pressure than a sintered body manufactured by a conventional sintering method in which the pressurization is started from normal temperature. EXAMPLES Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited thereto. EXAMPLE 1 180 g (purity 99.99%) of indium oxide powder and 20 g (purity 99.99%) of tin oxide powder were put into a ball mill pot having a capacity of 2 L, and 1 kg of nylon balls having a diameter of 10 mm was added thereto. Dry ball mill mixing was performed at 50 rpm for 5 hours. Next, 32 g of the obtained mixed powder
Into a 30 mm square press mold, and press pressure 3
Pressed at 00 kg / cm 2 and 30 mm square with a thickness of 11.
A 5 mm compact was produced. Next, 3ton
CIP treatment was performed at a pressure of / cm 2 . The molded body density of the obtained molded body was 4.3 g / cm 3 . Next, this compact was put into an oxygen pressure sintering furnace and sintered. The sintering conditions were as follows. (Sintering conditions) Sintering temperature: 1600 ° C. Heating rate: 100 ° C./Hr Sintering pressure: 4.5 atm (gauge pressure: 3.5 atm) Sintering time: 10 hours Pressing start temperature: 1150 ° C. Oxygen gas flow rate: 350 ml / min. (2 of furnace volume
%) When the sintered density of the sintered body manufactured under the above conditions was measured by the Archimedes method, the sintered density was 6.7 g / cm 3.
Met. Example 2 Using the same method as described in Example 1, a 30 mm square molded article having a thickness of 11.5 mm was manufactured. Sintering was performed under the sintering conditions. (Sintering Conditions) Sintering temperature: 1600 ° C. Heating rate: 100 ° C./Hr Sintering pressure: 6.0 atm (gauge pressure: 5.0 atm) Sintering time: 10 hours Pressing start temperature: 1300 ° C. Oxygen gas flow rate: 350 ml / min. (2 of furnace volume
%) When the sintered density of the sintered body manufactured under the above conditions was measured by the Archimedes method, the sintered density was 6.9 g / cm 3.
Met. COMPARATIVE EXAMPLE 1 Using the same method as described in Example 1, a 30 mm square molded article having a thickness of 11.5 mm was produced, and the molded article was placed in an oxygen pressurizing furnace and then fired. Sintering was performed under the sintering conditions.
The pressurization was started from room temperature and kept at that pressure until the end of the process. (Sintering conditions) Sintering temperature: 1600 ° C. Heating rate: 100 ° C./Hr Sintering pressure: 6.0 atm (gauge pressure: 5.0 atm) Sintering time: 10 hours Oxygen gas flow rate: 350 ml / min . (2 of furnace volume
%) When the sintered density of the sintered body manufactured under the above conditions was measured by the Archimedes method, the sintered density was 6.5 g / cm 3.
Met. COMPARATIVE EXAMPLE 2 A 30 mm square, 11.5 mm thick molded body was manufactured using the same method as described in Example 1, and the molded body was placed in an oxygen pressurizing furnace and fired in the next firing step. Sintering was performed under the sintering conditions. (Sintering Conditions) Sintering temperature: 1600 ° C. Heating rate: 100 ° C./Hr Sintering pressure: 4.5 atm (gauge pressure: 3.5 atm) Sintering time: 10 hours Pressing start temperature: 700 ° C. Oxygen gas flow rate: 350 ml / min. (2 of furnace volume
%) When the sintered density of the sintered body manufactured under the above conditions was measured by the Archimedes method, the sintered density was 6.4 g / cm 3.
Met. According to the present invention, when sintering is performed in a pressurized state in an oxygen atmosphere, the temperature at which the pressurization is started is set to 800 ° C. or more, so that the sintering process is performed. Since fine closed pores are more effectively eliminated from the sintered body, a high-density sintered body can be obtained. Therefore, even when the furnace pressure during sintering is lower than before, it is possible to obtain a sufficient density increasing effect, and it is possible to safely and efficiently produce a sintered body having a high sintering density. Become. [0027]
Claims (1)
(SnO2)とからなる粉末を成形して得られる成形体
を酸素雰囲気中で加圧焼結することによりITO焼結体
を製造するに際し、加圧を開始する温度を800℃以上
とすることを特徴とするITO焼結体の製造方法。(57) [Claims 1] A molded body obtained by molding a powder composed of indium oxide (In 2 O 3 ) and tin oxide (SnO 2 ) under pressure in an oxygen atmosphere. A method for producing an ITO sintered body, characterized in that, when producing an ITO sintered body, the temperature at which pressurization is started is set to 800 ° C. or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22588793A JP3381328B2 (en) | 1993-09-10 | 1993-09-10 | Manufacturing method of ITO sintered body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22588793A JP3381328B2 (en) | 1993-09-10 | 1993-09-10 | Manufacturing method of ITO sintered body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0782015A JPH0782015A (en) | 1995-03-28 |
| JP3381328B2 true JP3381328B2 (en) | 2003-02-24 |
Family
ID=16836430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22588793A Expired - Fee Related JP3381328B2 (en) | 1993-09-10 | 1993-09-10 | Manufacturing method of ITO sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3381328B2 (en) |
-
1993
- 1993-09-10 JP JP22588793A patent/JP3381328B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0782015A (en) | 1995-03-28 |
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