JP3382666B2 - Method for producing silicon nitride powder - Google Patents
Method for producing silicon nitride powderInfo
- Publication number
- JP3382666B2 JP3382666B2 JP13336393A JP13336393A JP3382666B2 JP 3382666 B2 JP3382666 B2 JP 3382666B2 JP 13336393 A JP13336393 A JP 13336393A JP 13336393 A JP13336393 A JP 13336393A JP 3382666 B2 JP3382666 B2 JP 3382666B2
- Authority
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- Prior art keywords
- silicon nitride
- nitride powder
- powder
- sintered body
- strength
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Description
【発明の詳細な説明】
【0001】
【産業上の利用分野】本発明は、高強度でそのバラツキ
が小さい焼結体を製造することができる窒化けい素粉末
を、金属けい素直接窒化法によって製造する方法に関す
る。
【0002】
【従来の技術】窒化けい素質焼結体は、強度、硬度、耐
熱性、耐摩性など優れた特性をもつ材料としてエンジニ
アリングセラミック、特に自動車用耐熱耐摩耗性部品や
産業機械部品などに応用されている。
【0003】このような窒化けい素質焼結体を製造する
ための窒化けい素粉末にはα型とβ型の二つの結晶形態
があるが一長一短がある。α型の結晶形態を多く取って
いる窒化けい素は、低温焼結で高強度で耐摩耗性に優れ
た焼結体が得られやすいが、焼結過程で生じるα→β転
移に伴なう柱状結晶の析出時に、柱状結晶の成長が均一
でなく異常粒成長が起こり、微細な緻密化が阻害される
欠点がある。特に大型形状の焼結体の場合には強度特性
がバラツクという問題があった。
【0004】β相含有率の高い窒化けい素は、その粒径
を制御することによって高強度、高靭性の焼結体が得ら
れることが特開平1-145380 号公報に記載されている
が、これを製造するには、高温下での窒化反応が必要で
あり、微粉末が得られにくい問題があった。
【0005】ところで、α型とβ型のいずれの窒化けい
素においても、微粉末を得るには長時間の粉砕が必要と
なるが、窒化けい素は金属に比べて著しく硬いので粉砕
工程で金属不純物が混入するのを避けることはできず、
高強度でしかも強度と耐摩耗性のバラツキの小さな焼結
体を製造することは困難であった。特に、粉砕工程で
は、エネルギー効率の点から、ステンレス、Fe−Cr系、
Fe−Mn系のFe系金属メディアが多く使用されるため、Fe
不純物が多く混入したものしか実用に供されていない
か、又はFe不純物の混入量が少なくても飛び込み粒子と
してのFe系不純物粒子の粗粒が存在し問題であった。
【0006】また、窒化けい素粉末の焼結メカニズムは
液相焼結であるため、通常は窒化けい素粉末と焼結助剤
とを湿式混合しスラリー化した後乾燥して用いられる
が、その際のスラリー化の媒体としては、Fe系不純物粒
子の粗粒が含まれた工業用水が一般的に用いられていた
ので、機械的特性に十分に優れた窒化けい素質焼結体を
製造することができなかった。
【0007】
【発明が解決しようとする課題】本発明の目的は、高強
度でそのバラツキが小さい焼結体を製造することができ
る窒化けい素粉末を金属けい素直接窒化法によって提供
することである。
【0008】
【課題を解決するための手段】すなわち、本発明は、金
属けい素粉末を脱鉄機又は200μm以下の目開きを有
する篩にかけて200μm以上のFe系不純物を除いて
から、カサ密度0.8〜1.5程度に成形し、それを窒
素及び/又はアンモニアを含む雰囲気中、温度1200
〜1500℃で加熱窒化して窒化インゴットを合成し、
それを粉砕又は解砕した後脱鉄処理することを特徴とす
る、Fe不純物含有量が1.0重量%以下であり、しか
も最大寸法200μm以上の大きさのFe系不純物粒子
が含まれていない窒化けい素粉末の製造方法である。
【0009】以下、さらに詳しく本発明を説明する。
【0010】本発明の窒化けい素粉末の結晶形態は、α
型、β型のいずれでもよいが、焼結体の強度特性と焼成
時の寸法安定性を重視する場合は、α相の割合は80%未
満の窒化けい素粉末であることが望ましく、また、焼結
体の強度特性と靱性を高めたい場合は、α相の割合が80
%よりも高い粉末であることが望ましいが、この場合に
は焼成温度の調節が必要となる。
【0011】本発明において、窒化けい素粉末のα相の
割合は、X線回折法におけるα相のIα102 とI
α210 、β相のIβ101 とIβ210 の回折ピーク強度か
ら次式によって算出することができる。
α相(%)={(Iα102 +Iα210 )/(Iα102 +
Iα210 +Iβ101+Iβ210 )}×100
【0012】Iα102 :αSi3N4 の(102)面の回折
ピーク強度
Iα210 :αSi3N4 の(210)面の回折ピーク強度
Iβ101 :βSi3N4 の(101)面の回折ピーク強度
Iβ210 :βSi3N4 の(210)面の回折ピーク強度
【0013】本発明においては、窒化けい素粉末のFe不
純物含有量は、 1.0重量%以下好ましくは 0.5重量%以
下であることが重要である。Feは窒化けい素の焼結過程
において粒界相に析出するので、それが 1.0重量%をこ
えると高温での抗折強度が著しく低下する。1200℃以上
における高温強度が要求される場合には、Fe不純物含有
量が200ppm以下であることが望ましい。
【0014】次に、本発明の窒化けい素粉末には、最大
寸法 200μm以上の大きさのFe系不純物粒子を含ませな
いことが重要なことである。Fe不純物は、それが微粒子
である場合、焼結助剤成分と共に粒界層に存在するの
で、その量が 1.0重量%以下である限り問題とならない
が、その粒子が大きくなると焼結に関与しなくなるので
そのまま焼結体に残留し、焼結欠陥として焼結体強度の
バラツキを生じさせる。
【0015】本発明者らの検討によれば、最大寸法 200
μm以上の大きさのFe系不純物粒子は、焼結体の焼結欠
陥として必ず残り、常にその部分の強度を大巾に低下さ
せるので、そのような粒子を含ませてはいけないことを
見いだした。特に高い強度と耐摩耗性を有する焼結体を
製造するための窒化けい素粉末原料としては、Fe系不純
物粒子の最大寸法は50μm以下であることが望ましい。
【0016】本発明の窒化けい素粉末の粉末度について
は、BET法で測定された比表面積が 2m2/g以上である
ことが望ましい。比表面積が 2m2/g未満では、焼結性が
低下して強度低下する恐れがある。比表面積の上限につ
いては特に制限はなく、極端にカサ高となって成形性を
損なわさせなければよい。
【0017】本発明の窒化けい素粉末は、金属けい素直
接窒化法により窒化けい素を製造し、それを粉砕又は解
砕した後脱鉄処理することによって製造することができ
る。
【0018】本発明の金属けい素直接窒化法では、金属
けい素粉末を強力脱鉄機又は200μm以下の目開きを
有する篩にかけて200μm以上のFe系不純物を除い
てから、カサ密度0.8〜1.5程度に成形し、それを
窒素及び/又はアンモニアを含む雰囲気中、温度120
0〜1500℃で加熱窒化して窒化インゴットを合成
し、必要に応じて粉砕・精製される。粉砕にFeを含む
金属材料を粉砕媒体やライニング材に使用した場合に
は、酸処理してFe系不純物粒子を溶解したり、200
μm以下の目開きを有する篩にかけたりして200μm
以上のFe系不純物粒子を除去・精製する。精製後の乾
燥・混合・袋詰等の工程ではFe系不純物粒子を発生・
混入させる恐れのない装置を使用する。
【0019】本発明の窒化けい素粉末を用いて焼結体を
製造するには、そのまま又はY2O3、MgO 、Al2O3 等の焼
結助剤を混合し成形した後、常法に従って焼成される
が、その際、窒化けい素粉末又は窒化けい素粉末と焼結
助剤との混合粉末をスラリー状としておき、成形時に粉
末化して使用することによって、強度等の機械的特性に
優れた複雑形状品を製造することができる。
【0020】窒化けい素粉末をスラリー化するための媒
体としては、常法の工業用水でもよいが、本発明の窒化
けい素粉末の特徴を十分に発揮させるために、最大寸法
200μm以上の大きさのFe系不純物粒子が含まれていな
い水及び/又は有機媒体を使用することが好ましい。有
機媒体としては、メタノール、エタノール、1,1,1
−トリクロルエタン等をあげることができる。媒体の使
用量は、その種類及び用途等によって一概に決定するこ
とができないが、窒化けい素粉末又は窒化けい素粉末と
焼結助剤との混合粉末 100重量部あたり 100〜400 重量
部が一般的である。スラリー化に際しては、Fe系不純物
粒子を発生・混入させる恐れのない装置が使用される。
【0021】
【実施例】以下、本発明を実施例と比較例をあげてさら
に具体的に説明する。
【0022】実施例1〜15
比表面積 2m2/gでFe不純物含有量の異なる種々の金属け
い素粉を 10000ガウスの脱鉄機にかけた後、カサ密度
1.0 g/cm3の窒化供試体(100 ×100 ×25mm)に成形
し、それを電気炉に充填し、窒素雰囲気中、温度1200〜
1500℃で窒化パターンを制御して窒化を行い、Fe不純物
含有量及びα相割合の異なる種々の窒化けい素インゴッ
トを合成した。
【0023】得られた窒化けい素インゴットは、ジョー
クラッシャー、トップグラインダー等で粗砕・中砕し、
10000ガウスの強力脱鉄機にてFe系不純物粒子を除去し
た後、ボールミルにて乾式粉砕又は湿式粉砕をしてから
精製し、ろ過・真空凍結乾燥を行って窒化けい素粉末を
製造した。
【0024】乾式粉砕は、内容積 5リットルのボールミ
ルに粗粉 200gと窒化けい素製ボール 3リットルを充填
して実施した。また、湿式粉砕は、内容積 5リットルの
ボールミルに粗粉 200gと窒化けい素製ボール 3リット
ル、水 500gを充填して実施した。精製は塩酸とフッ酸
で行った。
【0025】比較例1〜5
金属けい素粉及び粗砕・中砕後の窒化けい素粉末の脱鉄
処理を行わないで実施例1に準じて窒化けい素粉末を製
造した。
【0026】上記で得られた窒化けい素粉末92重量%、
焼結助剤として平均粒径 1.5μmのY2O3 5重量%、平均
粒径 0.8μmのAl2O33重量%を添加し、最大寸法 200μ
m以上の大きさのFe系不純物粒子が含まれていない1,
1,1−トリクロロエタンを加えて 4時間ボールミルで
湿式混合し、乾燥後 100kg/cm2 の成形圧でプレス成形
した後、それらを2700kg/cm2 の成形圧でCIP成形し
た。
【0027】実施例16
実施例4において、1,1,1−トリクロロエタンのか
わりに最大寸法 200μm以上の大きさのFe系不純物粒子
が含まれていない蒸留水を用いてスラリー濃度30重量%
の窒化けい素質粉末スラリーを調製した。これを乾燥し
て窒化けい素粉末と焼結助剤との混合粉末となし、それ
を用いて実施例4と同様な条件でCIP成形体を製造し
た。
【0028】実施例17
実施例16において、蒸留水のかわりに精製・ろ過の行
われていない配管スケール等が混入した工業用水を用い
たこと以外は実施例16と同様にしてCIP成形体を製
造した。
【0029】比較例6
実施例17において、実施例4で得られた窒化けい素粉
末のかわりに比較例5の窒化けい素粉末を用いたこと以
外は実施例17と同様にしてCIP成形体を製造した。
【0030】以上によって得られたCIP成形体を10kg
/cm2 の窒素ガス雰囲気中、α分率80%未満の窒化けい
素粉末を用いた場合には1850℃の温度で 4時間焼成し、
また、α分率80%をこえる窒化けい素粉末を用いた場合
には1800℃の温度で 6間焼成して焼結体を製造した。こ
れらの焼結体から10個の試片を切り出し3 ×4 ×40mmに
研削加工後、相対密度、室温及び1000℃での4点曲げ強
度を測定した。なお、室温曲げ強度については、n=10
の平均値と最低値を測定した。
【0031】実施例1〜15及び比較例1〜5の結果を
表1に、また、実施例16〜17及び比較例6の結果を
表2に示す。
【0032】(1)平均粒子径(μm):粒度分布計
(レーザー回折法、N&L社製「マイクロトラックSP
A」)による。
(2)α分率(%):理学電機社製ガイガーフラックス
RAD−IIB型X線回折による。
(3)Fe不純物含有量(ppm):JIS G 1322に
準拠した。
(4)Fe系不純物粒子の数:窒化けい素粉末 100gを純
水 500ccに超音波をかけて完全分散させてスラリーとな
し、そこへ 10000ガウスの磁石を入れて着磁した 200μ
m以上及び50μm以上の粒子数を40倍の実体顕微鏡を用
いて数えた。
(5)相対密度(%):アルキメデス法による。
(6)4点曲げ強さ:島津製作所社製オートグラフAG
−2000A型による。
【0033】
【表1】
【0034】
【表2】【0035】
【発明の効果】本発明によれば、高強度でしかもそのバ
ラツキが小さい焼結体を製造することのできる窒化けい
素粉末を、安価な金属けい素直接窒化法によって提供さ
れる。 Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon nitride powder capable of producing a sintered body having a high strength and a small variation.
And a method for producing the same by a direct silicon nitride method . 2. Description of the Related Art Silicon nitride sintered bodies are used as engineering ceramics as materials having excellent properties such as strength, hardness, heat resistance and abrasion resistance, particularly for heat-resistant wear-resistant parts for automobiles and industrial machine parts. Applied. [0003] Silicon nitride powder for producing such a silicon nitride sintered body has two crystal forms, α-type and β-type, but has advantages and disadvantages. Silicon nitride, which has a lot of α-type crystal morphology, can easily obtain a sintered body with high strength and excellent wear resistance at low temperature sintering, but it is accompanied by α → β transition generated in the sintering process When the columnar crystals are deposited, there is a disadvantage that the growth of the columnar crystals is not uniform, abnormal grain growth occurs, and fine densification is hindered. In particular, in the case of a large-sized sintered body, there is a problem that the strength characteristics vary. Japanese Patent Application Laid-Open No. 1-145380 describes that silicon nitride having a high β-phase content can provide a sintered body having high strength and high toughness by controlling the particle size. In order to manufacture this, a nitriding reaction at a high temperature is necessary, and there is a problem that it is difficult to obtain a fine powder. [0005] For both α-type and β-type silicon nitride, it takes a long time to pulverize to obtain a fine powder. It cannot be avoided that impurities are mixed in,
It has been difficult to produce a sintered body having high strength and small variations in strength and wear resistance. In particular, in the pulverizing step, from the viewpoint of energy efficiency, stainless steel, Fe-Cr,
Since Fe-Mn-based Fe-based metal media is often used,
Only those containing a large amount of impurities are practically used, or even if the amount of Fe impurities is small, coarse particles of Fe-based impurity particles are present as jump-in particles. Further, since the sintering mechanism of silicon nitride powder is liquid phase sintering, usually silicon nitride powder and a sintering aid are wet-mixed to form a slurry and then used after drying. As a medium for slurrying, industrial water containing coarse particles of Fe-based impurity particles was generally used, so it is necessary to produce a silicon nitride sintered body having sufficiently excellent mechanical properties. Could not. SUMMARY OF THE INVENTION It is an object of the present invention to provide a silicon nitride powder capable of producing a sintered body having a high strength and a small variation by a direct metal silicon nitride method.
It is to be. [0008] That is, the present invention provides a method of
A silicon powder with a iron removal machine or a mesh of 200μm or less
To remove 200μm or more Fe-based impurities
From a bulk density of about 0.8 to 1.5,
Temperature 1200 in an atmosphere containing nitrogen and / or ammonia
Heat nitriding at ~ 1500C to synthesize nitrided ingot,
It is characterized in that it is pulverized or crushed and then de-ironed.
Has an Fe impurity content of 1.0% by weight or less,
Also Fe-based impurity particles with a maximum size of 200 μm or more
Is a method for producing silicon nitride powder containing no . Hereinafter, the present invention will be described in more detail. [0010] The crystalline form of the silicon nitride powder of the present invention is α
Type or β type, but if emphasis is placed on the strength characteristics of the sintered body and the dimensional stability during firing, the proportion of the α phase is preferably less than 80% silicon nitride powder, To increase the strength characteristics and toughness of the sintered body, the ratio of α phase
% Is desirable, but in this case, the firing temperature needs to be adjusted. In the present invention, the ratio of the α phase of the silicon nitride powder is determined by the ratio of the α phase Iα 102 and I α 102 in the X-ray diffraction method.
It can be calculated from the diffraction peak intensities of Iβ 101 and Iβ 210 of α 210 and β phases by the following equation. α phase (%) = {(Iα 102 + Iα 210 ) / (Iα 102 +
Iα 210 + Iβ 101 + Iβ 210 )} × 100 [0012] Iα 102: αSi 3 N 4 in (102) diffraction peak intensity of the face Iα 210: αSi 3 N 4 in (210) diffraction peak of the plane intensity Iβ 101: βSi 3 N 4 (101) plane diffraction peak intensity Iβ 210 : β Si 3 N 4 (210) plane diffraction peak intensity In the present invention, the silicon nitride powder has an Fe impurity content of 1.0% by weight or less. It is important that the content is preferably 0.5% by weight or less. Since Fe precipitates in the grain boundary phase in the process of sintering silicon nitride, if it exceeds 1.0% by weight, the transverse rupture strength at high temperatures is significantly reduced. When high-temperature strength at 1200 ° C. or higher is required, the Fe impurity content is preferably 200 ppm or less. Next, it is important that the silicon nitride powder of the present invention does not contain Fe-based impurity particles having a maximum size of 200 μm or more. Fe impurities, if they are fine particles, are present in the grain boundary layer together with the sintering aid components, so there is no problem as long as the amount is 1.0% by weight or less. Since it disappears, it remains on the sintered body as it is, causing a variation in the strength of the sintered body as a sintering defect. According to the study of the present inventors, the maximum dimension 200
Since Fe-based impurity particles with a size of μm or more always remain as sintering defects in the sintered body and always greatly reduce the strength of that portion, it was found that such particles should not be included. . In particular, as a silicon nitride powder raw material for producing a sintered body having high strength and wear resistance, the maximum size of Fe-based impurity particles is desirably 50 μm or less. With respect to the fineness of the silicon nitride powder of the present invention, the specific surface area measured by the BET method is desirably 2 m 2 / g or more. If the specific surface area is less than 2 m 2 / g, the sinterability may decrease and the strength may decrease. The upper limit of the specific surface area is not particularly limited, and the upper limit of the specific surface area is not required to be excessively large and the moldability is not impaired. The silicon nitride powder of the present invention is a metal silicon
Manufacture silicon nitride by oxynitridation and pulverize or dissolve
Can be manufactured by crushing and then de-ironing
You. In the metal silicon direct nitriding method of the present invention, a metal silicon powder is passed through a strong iron removing machine or a sieve having an opening of 200 μm or less to remove Fe-based impurities of 200 μm or more, and then has a bulk density of 0.8 to less. It was molded to about 1.5, and it was heated in an atmosphere containing nitrogen and / or ammonia at a temperature of 120.
It is heated and nitrided at 0 to 1500 ° C. to synthesize a nitrided ingot, and is crushed and refined as necessary . When a metal material containing Fe is used for the pulverization medium or the lining material for the pulverization, an acid treatment is performed to dissolve the Fe-based impurity particles,
200 μm
The above-mentioned Fe-based impurity particles are removed and purified. In processes such as drying, mixing, and bagging after purification, Fe-based impurity particles are generated.
Use a device that does not cause contamination. In order to produce a sintered body using the silicon nitride powder of the present invention, a sintering aid such as Y 2 O 3 , MgO, Al 2 O 3 or the like is mixed and molded as it is. In this case, the silicon nitride powder or a mixed powder of the silicon nitride powder and the sintering aid is slurried, and powdered at the time of molding and used to obtain mechanical properties such as strength. Excellent complex shape products can be manufactured. As a medium for converting the silicon nitride powder into a slurry, conventional industrial water may be used. However, in order to sufficiently exhibit the characteristics of the silicon nitride powder of the present invention, the maximum size is required.
It is preferable to use water and / or an organic medium that does not contain Fe-based impurity particles having a size of 200 μm or more. As the organic medium, methanol, ethanol, 1,1,1
-Trichloroethane and the like. The amount of the medium used cannot be unconditionally determined depending on its type and use, but it is generally 100 to 400 parts by weight per 100 parts by weight of silicon nitride powder or a mixed powder of silicon nitride powder and a sintering aid. It is a target. At the time of slurrying, an apparatus that does not cause generation and mixing of Fe-based impurity particles is used. The present invention will be described more specifically below with reference to examples and comparative examples. Examples 1 to 15 Various silicon metal powders having a specific surface area of 2 m 2 / g and different contents of Fe impurities were passed through a 10,000 gauss deironer, and then the bulk density was increased.
Formed into a 1.0 g / cm 3 nitriding specimen (100 × 100 × 25 mm), filled in an electric furnace, and heated in a nitrogen atmosphere at a temperature of 1200 to
Various types of silicon nitride ingots with different Fe impurity contents and α phase ratios were synthesized by controlling the nitridation pattern at 1500 ° C. The obtained silicon nitride ingot is coarsely and medium crushed by a jaw crusher, a top grinder, or the like.
After removing Fe-based impurity particles with a 10,000 gauss powerful iron removal machine, the powder was subjected to dry pulverization or wet pulverization with a ball mill, and then purified, followed by filtration and vacuum freeze-drying to produce silicon nitride powder. The dry pulverization was carried out by charging 200 g of coarse powder and 3 L of silicon nitride balls into a ball mill having an internal volume of 5 L. The wet grinding was performed by charging a ball mill having an internal volume of 5 liters with 200 g of coarse powder, 3 liters of silicon nitride balls and 500 g of water. Purification was performed with hydrochloric acid and hydrofluoric acid. Comparative Examples 1 to 5 Silicon nitride powder was produced in the same manner as in Example 1 without performing the iron removal treatment on the metal silicon powder and the silicon nitride powder after the coarse and medium crushing. 92% by weight of the silicon nitride powder obtained above,
As a sintering aid, 5% by weight of Y 2 O 3 with an average particle size of 1.5 μm and 3% by weight of Al 2 O 3 with an average particle size of 0.8 μm are added, and the maximum size is 200 μm.
1, which does not contain Fe-based impurity particles
After adding 1,1-trichloroethane and wet-mixing with a ball mill for 4 hours, followed by drying and press molding at a molding pressure of 100 kg / cm 2 , they were subjected to CIP molding at a molding pressure of 2700 kg / cm 2 . Example 16 In Example 4, a slurry concentration of 30% by weight was used in place of 1,1,1-trichloroethane using distilled water containing no Fe-based impurity particles having a maximum size of 200 μm or more.
Was prepared. This was dried to form a mixed powder of silicon nitride powder and a sintering aid, and a CIP molded body was manufactured using the same under the same conditions as in Example 4. Example 17 A CIP molded body was manufactured in the same manner as in Example 16 except that industrial water mixed with piping scale and the like not subjected to purification and filtration was used instead of distilled water. did. Comparative Example 6 A CIP compact was prepared in the same manner as in Example 17 except that the silicon nitride powder of Comparative Example 5 was used instead of the silicon nitride powder obtained in Example 4. Manufactured. 10 kg of the CIP compact obtained as described above
/ Nitrogen gas atmosphere cm 2, in the case of using a silicon nitride powder of α fraction less than 80% calcined 4 hours at a temperature of 1850 ° C.,
When silicon nitride powder having an α fraction of more than 80% was used, a sintered body was produced by firing at a temperature of 1800 ° C. for 6 hours. Ten specimens were cut out from these sintered bodies, ground to 3 × 4 × 40 mm, and measured for relative density, four-point bending strength at room temperature and at 1000 ° C. In addition, about room temperature bending strength, n = 10
The average value and the minimum value were measured. The results of Examples 1 to 15 and Comparative Examples 1 to 5 are shown in Table 1, and the results of Examples 16 to 17 and Comparative Example 6 are shown in Table 2. (1) Average particle diameter (μm): particle size distribution meter (laser diffraction method, “Microtrack SP” manufactured by N & L)
A)). (2) α fraction (%): by Geiger flux RAD-IIB type X-ray diffraction manufactured by Rigaku Corporation. (3) Fe impurity content (ppm): Based on JIS G1322. (4) Number of Fe-based impurity particles: 100 g of silicon nitride powder was completely dispersed by applying ultrasonic waves to 500 cc of pure water to form a slurry, and a 10,000 Gauss magnet was put therein and magnetized.
The number of particles of m or more and 50 μm or more was counted using a stereo microscope of 40 times. (5) Relative density (%): by Archimedes' method. (6) Four-point bending strength: Autograph AG manufactured by Shimadzu Corporation
According to -2000A type. [Table 1] [Table 2] According to the present invention, high strength and high strength
Silicon nitride capable of producing sintered bodies with small roughness
Elemental powder provided by inexpensive silicon metal direct nitridation
It is.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 磯崎 啓 福岡県大牟田市新開町1 電気化学工業 株式会社 大牟田工場内 (56)参考文献 特開 昭63−30370(JP,A) 特開 昭59−54680(JP,A) (58)調査した分野(Int.Cl.7,DB名) C01B 21/068 C04B 35/626 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hiroshi Isozaki 1 Shinkaicho, Omuta City, Fukuoka Prefecture Inside the Omuta Plant of Electrochemical Industry Co., Ltd. (56) References JP-A-63-30370 (JP, A) JP-A-59- 54680 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) C01B 21/068 C04B 35/626
Claims (1)
以下の目開きを有する篩にかけて200μm以上のFe
系不純物を除いてから、カサ密度0.8〜1.5程度に
成形し、それを窒素及び/又はアンモニアを含む雰囲気
中、温度1200〜1500℃で加熱窒化して窒化イン
ゴットを合成し、それを粉砕又は解砕した後脱鉄処理す
ることを特徴とする、Fe不純物含有量が1.0重量%
以下であり、しかも最大寸法200μm以上の大きさの
Fe系不純物粒子が含まれていない窒化けい素粉末の製
造方法。 (57) [Claims] [Claim 1] A metal silicon powder is removed from a iron removal machine or 200 μm.
Sieve with a sieve having the following openings
After removing system impurities, make the bulk density 0.8 ~ 1.5
Molding and atmosphere containing nitrogen and / or ammonia
Medium nitriding by heating at 1200 to 1500 ° C
Synthesize the got, pulverize or disintegrate it, and then remove iron.
Fe content is 1.0% by weight
Or less, and a maximum size of 200 μm or more
Production of silicon nitride powder that does not contain Fe-based impurity particles
Construction method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13336393A JP3382666B2 (en) | 1992-08-07 | 1993-06-03 | Method for producing silicon nitride powder |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21179292 | 1992-08-07 | ||
| JP4-211792 | 1992-08-07 | ||
| JP13336393A JP3382666B2 (en) | 1992-08-07 | 1993-06-03 | Method for producing silicon nitride powder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06100304A JPH06100304A (en) | 1994-04-12 |
| JP3382666B2 true JP3382666B2 (en) | 2003-03-04 |
Family
ID=26467741
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13336393A Expired - Lifetime JP3382666B2 (en) | 1992-08-07 | 1993-06-03 | Method for producing silicon nitride powder |
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| JP (1) | JP3382666B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4757778B2 (en) * | 2006-11-10 | 2011-08-24 | 電気化学工業株式会社 | Silicon nitride powder, production method and use thereof |
| WO2025206127A1 (en) * | 2024-03-28 | 2025-10-02 | Ube株式会社 | Crystalline silicon nitride powder, silicon nitride-based sintered body, and method for producing silicon nitride-based sintered body |
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1993
- 1993-06-03 JP JP13336393A patent/JP3382666B2/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| JPH06100304A (en) | 1994-04-12 |
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