JP3384530B2 - Apparatus and method for polishing semiconductor wafer - Google Patents
Apparatus and method for polishing semiconductor waferInfo
- Publication number
- JP3384530B2 JP3384530B2 JP05450497A JP5450497A JP3384530B2 JP 3384530 B2 JP3384530 B2 JP 3384530B2 JP 05450497 A JP05450497 A JP 05450497A JP 5450497 A JP5450497 A JP 5450497A JP 3384530 B2 JP3384530 B2 JP 3384530B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- slurry
- heavy metal
- polishing slurry
- metal ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 title claims description 128
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 7
- 239000002002 slurry Substances 0.000 claims description 91
- 229910001385 heavy metal Inorganic materials 0.000 claims description 40
- 235000012431 wafers Nutrition 0.000 claims description 37
- 150000002500 ions Chemical class 0.000 claims description 33
- 239000011347 resin Substances 0.000 claims description 25
- 229920005989 resin Polymers 0.000 claims description 25
- 239000013522 chelant Substances 0.000 claims description 18
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 8
- 238000011109 contamination Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 6
- 239000004744 fabric Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000008119 colloidal silica Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000003729 cation exchange resin Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
- B24B55/03—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant designed as a complete equipment for feeding or clarifying coolant
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、研磨工程、特に鏡
面研磨工程における半導体ウェーハの重金属汚染を効果
的に防止することを可能とした半導体ウェーハの研磨装
置及び研磨方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer polishing apparatus and a polishing method capable of effectively preventing heavy metal contamination of a semiconductor wafer in a polishing step, particularly a mirror polishing step.
【０００２】[0002]
【関連技術】定盤を備えた研磨装置本体を有する半導体
ウェーハの研磨装置は知られている。半導体ウェーハの
鏡面研磨は、上記研磨装置を用い、研磨布を貼った定盤
を回転させ、コロイダルシリカを分散させた強アルカリ
性溶液（一般的に研磨スラリーと呼ばれるが、以下研磨
スラリー又は単にスラリーと称する）を流しながら、ウ
ェーハを研磨布に押し付けることにより行なわれる。該
スラリーは研磨スラリータンク（以下スラリータンクと
呼ぶことがある）から定盤上にポンプによって圧送され
研磨に供された後、そのまま廃棄されるか、又は経済的
な観点からスラリータンクに戻されて再び研磨に供され
る（以下循環使用と呼ぶことがある）かする。2. Related Art A semiconductor wafer polishing apparatus having a polishing apparatus body provided with a surface plate is known. Mirror polishing of semiconductor wafers is performed by using the above polishing apparatus, rotating a platen with a polishing cloth attached thereto, and a strong alkaline solution in which colloidal silica is dispersed (generally referred to as polishing slurry, but hereinafter referred to as polishing slurry or simply slurry). It is carried out by pressing the wafer against the polishing cloth while flowing (referred to as). The slurry is pumped from a polishing slurry tank (hereinafter sometimes referred to as a slurry tank) onto a surface plate by a pump to be used for polishing, and then discarded as it is or returned to the slurry tank from an economical point of view. It is again subjected to polishing (hereinafter sometimes referred to as circulation use).
【０００３】[0003]
【発明が解決しようとする課題】研磨装置にはスラリー
が接しうる多くの金属部分が存在する。したがって、ス
ラリーを循環使用する場合、スラリー中に研磨装置から
溶出した重金属イオンが濃縮されてウェーハが金属汚染
される可能性がある。また、突発的にスラリーが重金属
イオンにより汚染された場合、現在の研磨装置ではウェ
ーハ汚染を免れない。特にＣｕ2+，Ｎｉ2+といったイオ
ンはシリコン中での拡散係数が大きくウェーハを汚染し
やすいため、これらの濃度を極力低減する必要がある。There are many metal parts with which the slurry can come into contact with the polishing apparatus. Therefore, when the slurry is circulated and used, there is a possibility that heavy metal ions eluted from the polishing apparatus are concentrated in the slurry and the wafer is metal-contaminated. Further, when the slurry is suddenly contaminated with heavy metal ions, the current polishing apparatus cannot avoid wafer contamination. In particular, since ions such as Cu 2+ and Ni 2+ have a large diffusion coefficient in silicon and easily contaminate the wafer, it is necessary to reduce their concentrations as much as possible.
【０００４】本発明は、上記した事情に鑑みなされたも
ので、研磨工程、特に鏡面研磨工程における半導体ウェ
ーハの重金属汚染を効果的に防止することができるよう
にした半導体ウェーハの研磨装置及び研磨方法を提供す
ることを目的とする。The present invention has been made in view of the above circumstances, and a polishing apparatus and a polishing method for a semiconductor wafer capable of effectively preventing heavy metal contamination of a semiconductor wafer in a polishing step, particularly a mirror polishing step. The purpose is to provide.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
に、本発明の研磨装置は、回転可能に設けられた定盤を
有する研磨装置本体と、該定盤上に研磨スラリー供給手
段を介して供給される研磨スラリーを貯留する研磨スラ
リータンクとを具備する半導体ウェーハの研磨を行なう
装置であって、上記研磨スラリー供給手段に該研磨スラ
リー中の重金属イオンを除去する手段を設け、該研磨ス
ラリー中の重金属イオンを除去する手段が重金属イオン
捕捉基を有する高分子が封入充填されたカラムであり、
該高分子がイミノ二酢酸型キレート樹脂であることを特
徴とする。In order to solve the above-mentioned problems, the polishing apparatus of the present invention comprises a polishing apparatus main body having a rotatable platen, and a polishing slurry supply means on the platen. An apparatus for polishing a semiconductor wafer, comprising a polishing slurry tank for storing the polishing slurry supplied as a polishing slurry, wherein the polishing slurry supply means is provided with means for removing heavy metal ions in the polishing slurry .
Heavy metal ion is the means to remove heavy metal ion in rally
A column in which a polymer having a capturing group is encapsulated and packed,
The polymer is an iminodiacetic acid type chelate resin .
【０００６】上記金属イオン捕捉高分子又は樹脂として
は、陽イオン交換樹脂やキレート樹脂をあげることがで
きる。特に、ウェーハを汚染しやすいＣｕ2+，Ｎｉ2+の
除去にはＣｕ2+，Ｎｉ2+を強力に捕捉するイミノ二酢酸
型キレート樹脂が好適である。Examples of the metal ion trapping polymer or resin include cation exchange resin and chelate resin. In particular, an iminodiacetic acid type chelate resin that strongly captures Cu 2+ and Ni 2+ is suitable for removing Cu 2+ and Ni 2+ that easily contaminate the wafer.
【０００７】重金属イオンを捕捉する樹脂を封入充填し
たカラム等の重金属捕捉手段を設置することにより、研
磨機から溶出した重金属イオン、また、突発的に研磨ス
ラリー中に混入した重金属イオンは該樹脂に捕捉され、
定盤上には重金属イオンを含まない研磨スラリーが供給
される。よって、ウェーハの重金属イオンによる汚染が
抑制される。By installing a heavy metal trapping means such as a column in which a resin for trapping heavy metal ions is sealed and packed, the heavy metal ions eluted from the polishing machine and the heavy metal ions suddenly mixed in the polishing slurry are stored in the resin. Captured,
Polishing slurry containing no heavy metal ions is supplied onto the platen. Therefore, the contamination of the wafer with heavy metal ions is suppressed.
【０００８】前記研磨スラリーが研磨加工処理使用後、
研磨スラリータンクに回収され、再び研磨に供されるよ
うにした循環使用可能な構造としておけば、研磨スラリ
ーを繰り返し使用でき、経済的観点から見て好適であ
る。After the polishing slurry is used for polishing processing,
When the polishing slurry is collected in the polishing slurry tank and reused for polishing, the polishing slurry can be repeatedly used, which is preferable from an economical point of view.
【０００９】前記研磨スラリー供給手段としては、研磨
スラリー供給管を用いればよく、該研磨スラリー供給管
の研磨スラリー供給口に近接させて前記重金属イオン捕
捉カラムを設置すれば、該重金属イオン捕捉カラムを通
過することによって純化された研磨スラリーが再汚染さ
れる可能性が少なくなる利点がある。As the polishing slurry supply means, a polishing slurry supply pipe may be used, and if the heavy metal ion capture column is installed close to the polishing slurry supply port of the polishing slurry supply pipe, the heavy metal ion capture column There is an advantage that the purified polishing slurry is less likely to be re-contaminated by passing.
【００１０】本発明の半導体ウェーハの研磨方法は、上
記した研磨装置を用いて研磨スラリー中の重金属イオン
を除去しつつ半導体ウェーハの研磨を行なうことを特徴
とする。The semiconductor wafer polishing method of the present invention is characterized in that the semiconductor wafer is polished while removing heavy metal ions in the polishing slurry by using the above-described polishing apparatus.
【００１１】[0011]
【発明の実施の形態】以下に本発明の実施の形態を添付
図面を用いて説明する。図１は本発明に係わる半導体ウ
ェーハの研磨装置の１例を示す概略側面説明図である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a schematic side view showing an example of a semiconductor wafer polishing apparatus according to the present invention.
【００１２】図１において、１２は本発明に係る半導体
ウェーハの研磨装置で、研磨装置本体１４と該研磨装置
本体１４で用いられる研磨スラリー（コロイダルシリカ
を分散させた強アルカリ性溶液）１６を貯留する研磨ス
ラリータンク１８を具備している。In FIG. 1, reference numeral 12 is a semiconductor wafer polishing apparatus according to the present invention, which stores a polishing apparatus body 14 and a polishing slurry (strong alkaline solution in which colloidal silica is dispersed) 16 used in the polishing apparatus body 14. A polishing slurry tank 18 is provided.
【００１３】該研磨装置本体１４は、上面を開放した平
皿状のスラリー受け２０を有している。該スラリー受け
２０の上面中央部には回転軸２２が立設されている。該
回転軸２２の上端部には定盤本体２４ａが回転可能に取
りつけられている。２６は該定盤本体２４ａの上面を被
覆するように貼着された研磨布である。定盤２４は定盤
本体２４ａと研磨布２６によって構成される。The polishing apparatus main body 14 has a flat plate-shaped slurry receiver 20 having an open upper surface. A rotating shaft 22 is provided upright at the center of the upper surface of the slurry receiver 20. A platen body 24a is rotatably attached to the upper end of the rotary shaft 22. Reference numeral 26 is a polishing cloth attached so as to cover the upper surface of the platen body 24a. The surface plate 24 is composed of a surface plate body 24 a and a polishing cloth 26.
【００１４】２８は該定盤２４の上面に載置されるウェ
ーハＷを上方から下方に向かって該研磨布２６にウェー
ハＷを押しつけるように作用するデッドウェイトであ
る。３０は研磨スラリー供給管で、その基端開口部３１
は該スラリータンク１８内下部に位置し、その中間部に
ポンプ手段Ｐを設置し、かつその先端開口部は研磨スラ
リー供給口３２となっている。Reference numeral 28 is a dead weight that acts so as to press the wafer W placed on the upper surface of the surface plate 24 from above to below the polishing cloth 26. Reference numeral 30 denotes a polishing slurry supply pipe, which has a base end opening 31.
Is located in the lower portion of the slurry tank 18, the pump means P is installed in the middle portion thereof, and the tip end opening portion is the polishing slurry supply port 32.
【００１５】上記研磨スラリータンク１８に貯留された
研磨スラリー１６は、研磨スラリー供給管３０を介し、
研磨スラリー供給口３２から研磨装置本体１４の定盤２
４上の研磨加工位置に供給される。The polishing slurry 16 stored in the polishing slurry tank 18 is passed through a polishing slurry supply pipe 30,
From the polishing slurry supply port 32 to the surface plate 2 of the polishing apparatus main body 14
4 is supplied to the polishing processing position.
【００１６】３４は該研磨スラリー供給管３０の中間部
に取りつけられた重金属イオンを除去する手段で、具体
的には重金属イオン捕捉基を有する高分子が封入充填さ
れたカラムである。この重金属除去手段３４は可能な限
り、研磨スラリー供給口３２に近接させて設置し、この
重金属除去手段３４によって純化された研磨スラリーが
再汚染される可能性を少なくするのが好ましい。Reference numeral 34 is a means for removing heavy metal ions attached to the middle portion of the polishing slurry supply pipe 30, and more specifically, a column in which a polymer having a heavy metal ion trapping group is enclosed and packed. It is preferable that the heavy metal removing means 34 is installed as close to the polishing slurry supply port 32 as possible to reduce the possibility that the polishing slurry purified by the heavy metal removing means 34 will be re-contaminated.
【００１７】金属イオンを捕捉する高分子としては陽イ
オン交換樹脂やキレート樹脂をあげることができる。特
に、ウェーハを汚染しやすいＣｕ2+，Ｎｉ2+の除去には
Ｃｕ 2+，Ｎｉ2+を強力に捕捉するイミノ二酢酸型キレー
ト樹脂が好適である。As a polymer for trapping metal ions, positive ions are used.
An on-exchange resin and a chelate resin can be given. Special
Cu that easily contaminates wafers2+, Ni2+To remove
Cu 2+, Ni2+Iminodiacetic acid type killer that strongly captures
Resin is preferred.
【００１８】３６は研磨スラリー回収管で、その基端開
口部３６ａは該スラリー受けに連通し、その先端開口部
３６ｂは、該研磨スラリー供給タンク１８の上部に開口
している。A polishing slurry recovery pipe 36 has a base end opening 36a communicating with the slurry receiver, and a front end opening 36b opening above the polishing slurry supply tank 18.
【００１９】上記の構成により、該研磨スラリー供給口
３２から研磨スラリー１６をポンプＰによって該定盤２
４上に圧送供給しつつデッドウェイト２８の重量により
ウェーハＷを該定盤２４上面に押しつけることによっ
て、該ウェーハＷの鏡面研磨が行なわれる。With the above structure, the polishing slurry 16 is pumped from the polishing slurry supply port 32 by the pump P.
The wafer W is mirror-polished by pressing the wafer W against the upper surface of the platen 24 by the weight of the dead weight 28 while feeding the wafer W under pressure.
【００２０】本発明の研磨装置１２においては、研磨加
工の際に用いられる研磨スラリー１６は重金属除去手段
３４を通過することにより、研磨装置１２自体から溶出
した重金属イオン、また、突発的に研磨スラリー中に混
入した重金属イオンは該重金属除去手段３４によって捕
捉除去され、定盤２４上には重金属を含まない研磨スラ
リー１６が供給される。したがって、研磨されるウェー
ハＷの重金属イオンによる汚染は抑制される。In the polishing apparatus 12 of the present invention, the polishing slurry 16 used in the polishing process passes through the heavy metal removing means 34, so that the heavy metal ions eluted from the polishing apparatus 12 itself or the polishing slurry suddenly. The heavy metal ions mixed therein are captured and removed by the heavy metal removing means 34, and the polishing slurry 16 containing no heavy metal is supplied onto the surface plate 24. Therefore, the contamination of the wafer W to be polished with heavy metal ions is suppressed.
【００２１】そして、該定盤２４上に供給された研磨ス
ラリー１６はスラリー受け２０に集められ、スラリー回
収管３６を通って研磨スラリータンク１８に回収され、
循環使用される。Then, the polishing slurry 16 supplied onto the surface plate 24 is collected in the slurry receiver 20 and collected in the polishing slurry tank 18 through the slurry collecting pipe 36.
Used in circulation.
【００２２】[0022]
【実施例】以下に本発明の実施例をあげて説明する。
実施例１（イミノ二酢酸型キレート樹脂による重金属イ
オンの除去）及び比較例１
試料ウェーハ：ＣＺ、ｐ型、抵抗率；０．００８Ω・ｃ
ｍ程度、８インチφ、シリコンウェーハ
研磨スラリー：ＡＪ−１３２５〔ＳｉＯ2２ｗｔ％、ｐ
Ｈ１１、コロイダルシリカ研磨剤原液の商品名、日産化
学工業（株）製〕１０．０ｖｏｌ％＋純水（残部）
研磨荷重：４００ｇ／ｃｍ2
研磨時間：１０分
図１に示した研磨装置を用い、次の手順により、重金属
イオン除去手段（カラム）を作成し、上記した試料ウェ
ーハ及び研磨スラリーを用いて次の各実験を行なった。EXAMPLES Examples of the present invention will be described below. Example 1 (removal of heavy metal ions by iminodiacetic acid type chelate resin) and Comparative Example 1 Sample wafer: CZ, p type, resistivity; 0.008 Ω · c
m, 8 inches φ, silicon wafer polishing slurry: AJ-1325 [SiO 2 2 wt%, p
H11, product name of colloidal silica abrasive stock solution, manufactured by Nissan Chemical Industries, Ltd.] 10.0 vol% + pure water (the balance) Polishing load: 400 g / cm 2 Polishing time: 10 minutes Using the polishing apparatus shown in FIG. A heavy metal ion removing means (column) was prepared by the following procedure, and the following experiments were carried out using the above sample wafer and polishing slurry.
【００２３】イミノ二酢酸型キレート樹脂を一昼夜水に
浸漬したのち、適当濃度の塩酸、アンモニア水により数
回洗浄した。該樹脂をＰＴＦＥ製のカラム（長さ約５０
ｃｍ、直径約１０ｃｍ）に封入し、該カラムをスラリー
タンクとスラリー供給口の間のスラリー供給管に設置し
た。The iminodiacetic acid type chelate resin was immersed in water for 24 hours and then washed several times with hydrochloric acid and ammonia water having appropriate concentrations. The resin is applied to a PTFE column (length about 50
cm, diameter about 10 cm) and the column was installed in the slurry supply pipe between the slurry tank and the slurry supply port.
【００２４】その後、スラリータンクにＮｉ2+及びＣｕ
2+をそれぞれ１００ｐｐｂずつ含有したスラリーを入れ
た。Then, Ni 2+ and Cu were added to the slurry tank.
A slurry containing 100 ppb of 2+ each was added.
【００２５】上記故意汚染スラリーを用いて上記した研
磨条件で研磨した場合（比較例１）とこの故意汚染スラ
リーをイミノ二酢酸型キレート樹脂で純化して上記した
研磨条件で研磨した場合（実施例１）のシリコンウェー
ハ上のＮｉ2+及びＣｕ2+濃度を測定し、それぞれ図２に
示した。故意汚染スラリー中のＮｉ2+，Ｃｕ2+が上記キ
レート樹脂によって除去されＮｉ2+及びＣｕ2+の濃度が
低減されているのがわかる。When the above intentionally contaminated slurry was polished under the above polishing conditions (Comparative Example 1) and when this intentionally contaminated slurry was purified with an iminodiacetic acid type chelate resin and polished under the above polishing conditions (Example) The Ni 2+ and Cu 2+ concentrations on the silicon wafer of 1) were measured and shown in FIG. Ni 2+ intentional contamination in the slurry, Cu 2+ is understood that the concentration of the removed Ni 2+ and Cu 2+ by the chelate resin is reduced.
【００２６】実施例２及び比較例２
イミノ二酢酸型キレート樹脂カラムを組み込んだ場合
（実施例２）と組み込まない場合（比較例２）につき、
２０ｐｐｂのＮｉ2+を含有する研磨スラリーを循環使用
して実施例１と同様の研磨条件で研磨したときのシリコ
ンウェーハ上のＮｉ2+濃度の変遷を測定し、その結果を
図３に示した。図３から該キレート樹脂カラムを組み込
んでいない研磨装置ではウェーハ表面上のＮｉ2+濃度が
徐々に上昇しているのに対し、該キレート樹脂カラムを
組み込んだ研磨装置ではＮｉ2+の濃度が低レベルで安定
していることがわかる。Example 2 and Comparative Example 2 The case of incorporating an iminodiacetic acid type chelate resin column (Example 2) and the case of not incorporating it (Comparative Example 2)
The transition of the Ni 2+ concentration on the silicon wafer was measured when the polishing slurry containing 20 ppb of Ni 2+ was circulated and polished under the same polishing conditions as in Example 1, and the results are shown in FIG. . It can be seen from FIG. 3 that the Ni 2+ concentration on the wafer surface is gradually increased in the polishing apparatus not incorporating the chelate resin column, whereas the Ni 2+ concentration is low in the polishing apparatus incorporating the chelate resin column. You can see that it is stable at the level.
【００２７】上記した各実施例の結果から、重金属イオ
ン除去手段をスラリータンクと研磨装置本体の間、即
ち、スラリー供給管に組み込む方法が、半導体ウェーハ
の重金属汚染抑制に対し効果的であることが明らかとな
った。From the results of the above-mentioned embodiments, the method of incorporating the heavy metal ion removing means between the slurry tank and the polishing apparatus main body, that is, in the slurry supply pipe is effective for suppressing the heavy metal contamination of the semiconductor wafer. It became clear.
【００２８】なお、上記実施例では重金属イオンの例と
してＮｉ2+，Ｃｕ2+を使用したため、キレート樹脂とし
てイミノ二酢酸型キレート樹脂を使用したが、他のイオ
ンを除去する場合でも各イオンを有効に除去できる樹脂
を使用すれば同様な効果が得られることは言うまでもな
い。Since Ni 2+ and Cu 2+ were used as examples of heavy metal ions in the above-mentioned embodiment, an iminodiacetic acid type chelate resin was used as the chelate resin. However, even when other ions are removed, each ion is removed. It goes without saying that the same effect can be obtained by using a resin that can be effectively removed.
【００２９】[0029]
【発明の効果】以上述べたごとく、本発明によれば、重
金属イオンを捕捉する手段、例えば、重金属イオンを除
去する高分子を封入充填したカラムを、研磨スラリー供
給手段、例えば、研磨スラリー供給管の研磨スラリー供
給口に近接させて設置することにより、研磨装置の金属
部分からの重金属イオン溶出による研磨スラリー汚染や
突発的な研磨スラリーの汚染があっても、半導体ウェー
ハの研磨加工時の重金属汚染を抑制することが可能とな
った。As described above, according to the present invention, a means for trapping heavy metal ions, for example, a column filled with a polymer for removing heavy metal ions, is used as a polishing slurry supply means, for example, a polishing slurry supply pipe. Installed in close proximity to the polishing slurry supply port of, even if there is polishing slurry contamination due to elution of heavy metal ions from the metal part of the polishing device or sudden polishing slurry contamination, heavy metal contamination during polishing processing of semiconductor wafers It became possible to suppress.
【図１】本発明に係る半導体ウェーハの研磨装置の１例
を示す概略側面説明図である。FIG. 1 is a schematic side view showing an example of a semiconductor wafer polishing apparatus according to the present invention.
【図２】実施例１（キレート樹脂カラム組み込み後）と
比較例１（キレート樹脂カラム組み込み前）におけるウ
ェーハ上の不純物濃度を示すグラフである。FIG. 2 is a graph showing the impurity concentration on the wafer in Example 1 (after incorporating the chelate resin column) and Comparative Example 1 (before incorporating the chelate resin column).
【図３】実施例２（キレート樹脂カラムを組み込んだ場
合）と比較例２（キレート樹脂カラムを組み込まない場
合）におけるウェーハ表面上の不純物濃度を示すグラフ
である。FIG. 3 is a graph showing the impurity concentration on the wafer surface in Example 2 (when the chelate resin column is incorporated) and Comparative Example 2 (when the chelate resin column is not incorporated).
１２ 研磨装置 １４ 研磨装置本体 １６ 研磨スラリー １８ スラリータンク ２０ スラリー受け ２２ 回転軸 ２４ 定盤 ２４ａ 定盤本体 ２６ 研磨布 ２８ デッドウェイト ３０ 研磨スラリー供給管 ３１ 基端開口部 ３２ 研磨スラリー供給口 ３４ 重金属除去手段 ３６ 研磨スラリー回収管 ３６ａ 基端開口部 Ｐ ポンプ手段 Ｗ ウェーハ 12 Polishing device 14 Polishing device body 16 polishing slurry 18 Slurry tank 20 Slurry receiver 22 rotation axis 24 surface plate 24a Surface plate body 26 polishing cloth 28 dead weight 30 Polishing slurry supply pipe 31 Base end opening 32 Polishing slurry supply port 34 Heavy metal removing means 36 Polishing slurry recovery pipe 36a Base end opening P pump means W wafer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 味戸 利夫 福島県西白河郡西郷村大字小田倉字大平 150番地 信越半導体株式会社 半導体 白河研究所内 (56)参考文献 特開 平３−256665（ＪＰ，Ａ) 特開 平６−285742（ＪＰ，Ａ) 特開 平３−94883（ＪＰ，Ａ) 特開 昭63−272460（ＪＰ，Ａ) 実開 平５−70863（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) B24B 37/00 B24B 57/02 H01L 21/304 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshio Mido 150 Odaira, Odakura, Saigo-mura, Nishishirakawa-gun, Fukushima Prefecture Shin-Etsu Semiconductor Co., Ltd. Semiconductor Shirakawa Laboratory (56) Reference JP-A-3-256665 (JP, A) ) JP-A-6-285742 (JP, A) JP-A-3-94883 (JP, A) JP-A-63-272460 (JP, A) Fukuihei 5-70863 (JP, U) (58) Field (Int.Cl. 7 , DB name) B24B 37/00 B24B 57/02 H01L 21/304
Claims (4)
装置本体と、該定盤上に研磨スラリー供給手段を介して
供給される研磨スラリーを貯留する研磨スラリータンク
とを具備する半導体ウェーハの研磨を行なう装置であっ
て、上記研磨スラリー供給手段に該研磨スラリー中の重
金属イオンを除去する手段を設け、該研磨スラリー中の
重金属イオンを除去する手段が重金属イオン捕捉基を有
する高分子が封入充填されたカラムであり、該高分子が
イミノ二酢酸型キレート樹脂であることを特徴とする半
導体ウェーハの研磨装置。1. A semiconductor wafer comprising: a polishing apparatus main body having a rotatable platen; and a polishing slurry tank for storing polishing slurry supplied on the platen through a polishing slurry supply means. An apparatus for polishing, wherein the polishing slurry supply means is provided with means for removing heavy metal ions in the polishing slurry,
The means for removing heavy metal ions has a heavy metal ion trapping group.
Is a column in which the polymer to be encapsulated is packed and the polymer is
A polishing apparatus for semiconductor wafers, which is an iminodiacetic acid type chelate resin .
スラリータンクに回収され、再び研磨に供されるように
した循環使用可能な構造となっている請求項１記載の研
磨装置。Wherein said abrasive slurry is collected in a polishing slurry tank after the polishing treatment using a polishing apparatus according to claim 1, characterized in that a circulating available structures to be subjected to polishing again.
ー供給管であり、該研磨スラリー供給管の研磨スラリー
供給口に近接させて前記カラムを設置したことを特徴と
する請求項１又は２記載の研磨装置。Wherein said polishing slurry supplying means is a polishing slurry supply pipe, the polishing according to claim 1 or 2, characterized in that installed the column in close proximity to the abrasive slurry supply port of the polishing slurry supply pipe apparatus.
装置を用いて該研磨スラリー中の重金属イオンを除去し
つつ半導体ウェーハの研磨を行なう研磨方法。4. A polishing method using a polishing apparatus according to any one of claims 1 to 3 perform polishing of the semiconductor wafer while removing heavy metal ions in the polishing slurry.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05450497A JP3384530B2 (en) | 1996-03-25 | 1997-03-10 | Apparatus and method for polishing semiconductor wafer |
| DE69703312T DE69703312T2 (en) | 1996-03-25 | 1997-03-19 | Device and method for polishing semiconductor wafers |
| EP97104697A EP0798079B1 (en) | 1996-03-25 | 1997-03-19 | Polishing apparatus and polishing method for silicon wafers |
| MYPI97001183A MY132494A (en) | 1996-03-25 | 1997-03-20 | Polishing apparatus and polishing method for silicon wafers |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8-67997 | 1996-03-25 | ||
| JP6799796 | 1996-03-25 | ||
| JP05450497A JP3384530B2 (en) | 1996-03-25 | 1997-03-10 | Apparatus and method for polishing semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09314466A JPH09314466A (en) | 1997-12-09 |
| JP3384530B2 true JP3384530B2 (en) | 2003-03-10 |
Family
ID=26395260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05450497A Expired - Fee Related JP3384530B2 (en) | 1996-03-25 | 1997-03-10 | Apparatus and method for polishing semiconductor wafer |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0798079B1 (en) |
| JP (1) | JP3384530B2 (en) |
| DE (1) | DE69703312T2 (en) |
| MY (1) | MY132494A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104552002A (en) * | 2014-12-29 | 2015-04-29 | 苏州用朴合金工具有限公司 | Cooling liquid recycling system for CBN (cubic boron nitride) grinding wheel processing based on hard alloy rod |
| KR20160134513A (en) | 2015-05-14 | 2016-11-23 | 가부시기가이샤 디스코 | Polishing apparatus |
| KR20180020888A (en) | 2016-08-18 | 2018-02-28 | 가부시기가이샤 디스코 | Polishing device |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001121407A (en) | 1999-10-21 | 2001-05-08 | Nec Corp | Polisher |
| JP4657412B2 (en) * | 1999-12-10 | 2011-03-23 | エルエスアイ コーポレーション | Apparatus and method for polishing a semiconductor wafer |
| JP4510362B2 (en) * | 2001-11-30 | 2010-07-21 | 俊郎 土肥 | CMP apparatus and CMP method |
| JP2004075859A (en) * | 2002-08-19 | 2004-03-11 | Chubu Kiresuto Kk | Polishing slurry cleaning method |
| JP4644120B2 (en) * | 2003-03-18 | 2011-03-02 | 野村マイクロ・サイエンス株式会社 | Semiconductor polishing slurry refining material, semiconductor polishing slurry refining module, and semiconductor polishing slurry refining method |
| JP4551167B2 (en) * | 2004-09-14 | 2010-09-22 | 日本化学工業株式会社 | Semiconductor wafer polishing apparatus and polishing method using the same |
| JP2006346753A (en) * | 2005-06-13 | 2006-12-28 | Nomura Micro Sci Co Ltd | Method for decontamination of metal-contaminated polishing slurry |
| TWI417430B (en) * | 2006-08-25 | 2013-12-01 | 應用材料股份有限公司 | Method and system for processing point of substrate polishing liquid |
| JP2010167551A (en) | 2008-12-26 | 2010-08-05 | Nomura Micro Sci Co Ltd | Method for regenerating used slurry |
| US9259668B2 (en) * | 2012-02-17 | 2016-02-16 | Jsr Corporation | Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate |
| JP7000102B2 (en) * | 2017-09-29 | 2022-01-19 | 株式会社フジミインコーポレーテッド | Polishing method and polishing composition |
| JP6946166B2 (en) * | 2017-12-20 | 2021-10-06 | パナソニックＩｐマネジメント株式会社 | Polishing equipment and polishing method |
| JP7594864B2 (en) * | 2020-06-05 | 2024-12-05 | 株式会社フジミインコーポレーテッド | Method for producing anion-modified colloidal silica |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59189987A (en) * | 1983-04-11 | 1984-10-27 | Nec Corp | Circulative use of waste water used for grinding silicon wafer |
| US5087372A (en) * | 1989-03-24 | 1992-02-11 | Asahi Kasei Kogyo Kabushiki Kaisha | Method for removing heavy metal ions from contaminated water and a porous membrane usable therefor |
| JP3150990B2 (en) * | 1991-03-25 | 2001-03-26 | 旭化成株式会社 | Treatment method for Ga-As polishing wastewater |
| US5584959A (en) * | 1993-08-16 | 1996-12-17 | Ebara Corporation | Waste treatment system in a polishing apparatus |
-
1997
- 1997-03-10 JP JP05450497A patent/JP3384530B2/en not_active Expired - Fee Related
- 1997-03-19 DE DE69703312T patent/DE69703312T2/en not_active Expired - Fee Related
- 1997-03-19 EP EP97104697A patent/EP0798079B1/en not_active Expired - Lifetime
- 1997-03-20 MY MYPI97001183A patent/MY132494A/en unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104552002A (en) * | 2014-12-29 | 2015-04-29 | 苏州用朴合金工具有限公司 | Cooling liquid recycling system for CBN (cubic boron nitride) grinding wheel processing based on hard alloy rod |
| KR20160134513A (en) | 2015-05-14 | 2016-11-23 | 가부시기가이샤 디스코 | Polishing apparatus |
| KR20180020888A (en) | 2016-08-18 | 2018-02-28 | 가부시기가이샤 디스코 | Polishing device |
| CN107756238A (en) * | 2016-08-18 | 2018-03-06 | 株式会社迪思科 | Lapping device |
| CN107756238B (en) * | 2016-08-18 | 2021-03-26 | 株式会社迪思科 | Grinding device |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0798079A2 (en) | 1997-10-01 |
| DE69703312D1 (en) | 2000-11-23 |
| JPH09314466A (en) | 1997-12-09 |
| EP0798079A3 (en) | 1998-03-25 |
| EP0798079B1 (en) | 2000-10-18 |
| DE69703312T2 (en) | 2001-02-22 |
| MY132494A (en) | 2007-10-31 |
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