JP3390905B2 - Cerium-doped lithium niobate single crystal, method for producing the same, and optical element including the single crystal - Google Patents
Cerium-doped lithium niobate single crystal, method for producing the same, and optical element including the single crystalInfo
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- JP3390905B2 JP3390905B2 JP36833697A JP36833697A JP3390905B2 JP 3390905 B2 JP3390905 B2 JP 3390905B2 JP 36833697 A JP36833697 A JP 36833697A JP 36833697 A JP36833697 A JP 36833697A JP 3390905 B2 JP3390905 B2 JP 3390905B2
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Description
【0001】[0001]
【発明の属する技術分野】本発明は、レーザー光を利用
した光情報処理技術、光加工技術、光化学反応技術、光
計測制御技術等々の分野で利用するニオブ酸リチウム
(LiNb03)(以下「LN」と略記する)単結晶に
関するものである。より詳しくは、ホログラム回折効率
とその応答速度を向上させた光学素子用LN単結晶およ
びその製造方法および当該LN単結晶を含むホログラム
メモリー素子に関するものである。TECHNICAL FIELD The present invention relates to lithium niobate (LiNbO 3 ) (hereinafter referred to as “LNB0 3 ”) used in the fields of optical information processing technology using laser light, optical processing technology, photochemical reaction technology, optical measurement control technology, and the like. Abbreviated as "). More specifically, the present invention relates to an LN single crystal for an optical element having improved hologram diffraction efficiency and its response speed, a manufacturing method thereof, and a hologram memory element including the LN single crystal.
【0002】[0002]
【従来の技術】LN単結晶を光学応用に用いる場合、強
いレーザー光を当てると局所的な屈折率の変化(光誘起
屈折率変化)が現れ、この光誘起屈折率変化を積極的に
利用して高感度光メモリとして位相型ホログラム記録素
子に応用する関心が高まっている。特に、LN単結晶
は、数ある電気光学結晶の中でも比較的安価で大型の結
晶が容易に入手できることに加えてホログラムの記録時
間が数カ月以上可能であるという、他のフォトリフラク
ティブ結晶よりも優れた特徴を持つため、位相型ホログ
ラム記録メモリ素子の応用研究に用いられている。一
方、遷移金属を添加しない一致溶融組成のLN単結晶
は、ホログラム回折効率が極端に低いため、これら応用
には適さず、LN単結晶のホログラム回折効率を向上さ
せるため、従来はコングルエント組成に数百ppmのF
eを添加した結晶が主に用いられてきた。2. Description of the Related Art When an LN single crystal is used for optical applications, when a strong laser beam is applied, a local change in the refractive index (light-induced refractive index change) appears, and this light-induced refractive index change is positively utilized. There is a growing interest in applying it to a phase hologram recording element as a high-sensitivity optical memory. In particular, LN single crystals are superior to other photorefractive crystals in that, among the many electro-optic crystals, relatively inexpensive and large crystals are easily available, and hologram recording time is several months or more. Because of its characteristics, it is used for applied research of phase hologram recording memory devices. On the other hand, the LN single crystal of the congruent melting composition to which the transition metal is not added is not suitable for these applications because the hologram diffraction efficiency is extremely low. 100 ppm F
Crystals to which e has been added have been mainly used.
【0003】LN単結晶は、融点近くで比較的幅の広い
不定比組成を有し、Li2O−Nb2O5疑二成分系相図
上で不定比領域がNb過剰側にのみ広がっているため、
通常のCz法では定比組成LN結晶の育成は困難であっ
た。ここで、「定比組成LN結晶」とは、Li2O(N
b2O5+Li2O)のモル分率が0.50の結晶を意味
する。「コングルエント組成LN結晶」は、Li2O
(Nb2O5+Li2O)のモル分率が0.485の結晶
である。これまで、本発明者らは、全自動原料連続供給
二重坩堝引き上げ法を開発し、Li成分過剰融液から定
比組成LN単結晶の育成を行ってきた(「応用物理」65
(1996)931 )が、K2Oを融液に添加しても、同様に定
比組成に近いLN単結晶が育成できることが知られてい
る(G.I.Malovichko et al. Appl.Phys.A 56(1993)103
)。LN single crystals have a relatively wide non-stoichiometric composition near the melting point, and the non-stoichiometric region spreads only to the Nb-excess side on the Li 2 O--Nb 2 O 5 pseudo binary system phase diagram. Because
It was difficult to grow a stoichiometric LN crystal by the usual Cz method. Here, “stoichiometric LN crystal” means Li 2 O (N
b 2 O 5 + Li 2 O) means a crystal having a mole fraction of 0.50. "Congruent composition LN crystal" is Li 2 O
It is a crystal having a molar fraction of (Nb 2 O 5 + Li 2 O) of 0.485. So far, the present inventors have developed a fully automatic raw material continuous supply double crucible pulling method, and have grown a stoichiometric LN single crystal from an Li component excess melt (“Applied Physics” 65
(1996) 931), it is known that an LN single crystal having a similar stoichiometric composition can be grown even when K 2 O is added to the melt (GI Malovichko et al. Appl. Phys. A 56 (1993). ) 103
).
【0004】[0004]
【発明が解決しようとする課題】可視光のレーザー光を
用いて単結晶内に三次元ホログラムを書き込む光レーザ
装置に用いる単結晶として、LN単結晶にFe等の遷移
金属を添加することでホログラム回折効率を向上したL
N単結晶が研究に用いられていたが、コングルエント組
成に鉄を多量に加えて育成した結晶では、結晶中にスト
リエーシヨンや光散乱等の結晶欠陥が取り込まれ、これ
が結晶の光学的不均質性やレーザー光の不均一散乱をも
たらす結果、ホログラムの回折効率が結晶の場所によっ
て大きく変動するため安定したホログラム回折特性が得
られないという問題があった。As a single crystal used in an optical laser device for writing a three-dimensional hologram in a single crystal by using visible laser light, a hologram is obtained by adding a transition metal such as Fe to LN single crystal. L with improved diffraction efficiency
N single crystal was used for research, but in the crystal grown by adding a large amount of iron to the congruent composition, crystal defects such as striation and light scattering are incorporated into the crystal, which causes optical inhomogeneity of the crystal. As a result of the unevenness and the non-uniform scattering of laser light, there is a problem in that the hologram diffraction efficiency varies greatly depending on the crystal position, and stable hologram diffraction characteristics cannot be obtained.
【0005】また、コングルエント組成に鉄を添加した
結晶では、ホログラム回折効率が一定値に到達するまで
の時間(ホログラム書き込みの応答時間)が遅いという
問題があるため、ホログラムメモリー素子への応用には
書き込み速度が遅いという難点があるとされていた。さ
らに、本発明者らは、LN単結晶の組成をストイキオメ
トリ組成に近づけることで鉄添加LN単結晶のホログラ
ム回折効率を向上させることができることを最近見い出
しているが、この場合、大きな回折効率が得られるの
は、主として波長532nm近傍の可視光域であるとい
う問題があるため、より長波長域の近赤外レーザーを用
いるホログラムメモリー素子への応用には難点があると
されていた。Further, in the crystal in which iron is added to the congruent composition, there is a problem that the time until the hologram diffraction efficiency reaches a constant value (hologram writing response time) is slow, so that it is not suitable for application to a hologram memory device. It was said that the writing speed was slow. Furthermore, the present inventors have recently found that it is possible to improve the hologram diffraction efficiency of the iron-added LN single crystal by bringing the composition of the LN single crystal closer to the stoichiometry composition, but in this case, a large diffraction efficiency is obtained. It is said that there is a problem that the above is mainly obtained in the visible light region near a wavelength of 532 nm, and therefore there is a difficulty in application to a hologram memory device using a near infrared laser in a longer wavelength region.
【0006】[0006]
【課題を解決するための手段】本発明者らは、前記課題
を解決すべく鋭意研究の結果、LN単結晶の結晶組成を
制御した結晶育成を研究することにより、Ceを添加し
た準定比組成および定比組成のLN結晶を育成すること
で光誘起屈折率変化特性を制御し、可視から近赤外光域
での回折効率が高く、さらにその書き込み速度も早く、
しかも光散乱となるボイドやストリエーション等の結晶
欠陥がなく、結晶品質に非常に優れたLN単結晶が得ら
れることを知見し、ここに本発明をなしたものである。Means for Solving the Problems As a result of earnest research for solving the above problems, the present inventors have studied the crystal growth in which the crystal composition of LN single crystal was controlled to find a quasi-stoichiometric ratio containing Ce. By growing LN crystal of composition and stoichiometric composition, the photo-induced refractive index change property is controlled, the diffraction efficiency in the visible to near infrared light region is high, and the writing speed is fast,
Moreover, it was found that an LN single crystal having extremely excellent crystal quality without crystal defects such as voids and striations that cause light scattering can be obtained, and the present invention has been made here.
【0007】よく知られているように、LN単結晶は幅
広い不定比組成をもつため、定比組成結晶の育成は通常
容易ではなく、定比組成結晶を育成しようとした場合で
も、ほんのわずかに組成が定比からずれてしまうことが
ある。ここでは、これを「準定比組成結晶」と称してい
る。本発明による定比組成LN結晶および準定比組成L
N結晶では、Ceを添加することでHe−Neレーザー
の回折が増大し、大きな屈折率変化とフォトリフラクテ
ィブ感度が得られた。特にCeの濃度が18ppm以上
の場合には、2*10-7以上の優れたフォトリフラクテ
ィブ感度が得られることがわかった。As is well known, since LN single crystals have a wide range of non-stoichiometric compositions, it is usually not easy to grow stoichiometric crystals, and even if it is attempted to grow stoichiometric crystals, it is only slightly possible. The composition may deviate from the stoichiometric ratio. Here, this is referred to as “quasi-stoichiometric crystal”. Stoichiometric LN crystal and quasi-stoichiometric L according to the invention
In the N crystal, the addition of Ce increased the diffraction of the He—Ne laser, and a large refractive index change and photorefractive sensitivity were obtained. In particular, it has been found that when the Ce concentration is 18 ppm or more, excellent photorefractive sensitivity of 2 * 10 −7 or more can be obtained.
【0008】すなわち、本発明は、セリウムをl8pp
m以上1000ppm以下含み、可視から近赤外域での
光吸収とフォトリフラクティブ感度を増大させたもので
あって、Li2O/(Nb2O5+Li2O)のモル分率が
0.495〜0.50であることを特徴とするセリウム
を添加した準定比組成および定比組成のニオブ酸リチウ
ム単結晶に関する。That is, according to the present invention, cerium is added at 18 pp
m to 1000 ppm or less to increase light absorption and photorefractive sensitivity in the visible to near-infrared region, and the molar fraction of Li 2 O / (Nb 2 O 5 + Li 2 O) is 0.495 to The present invention relates to a cerium-added quasi-stoichiometric composition and stoichiometric composition lithium niobate single crystal characterized by being 0.50.
【0009】また、本発明は、セリウムを添加したニオ
ブ酸リチウム単結晶を製造するに際し、Li2O/(N
b2O5+Li2O)=0.40〜0.60に、Kを5w
t%以上添加した融液組成、または、Li2O/(Nb2
O5+Li2O)=0.56〜0.60のKを添加しない
融液組成から、光学的均質性に優れたLi2O/(Nb2
O5+Li2O)のモル分率が0.495〜0.50の準
定比組成および定比組成の結晶を育成することを特徴と
するニオブ酸リチウム単結晶の製造方法に関する。Further, the present invention provides a method for producing Li 2 O / (N
a b 2 O 5 + Li 2 O ) = 0.40~0.60, 5w and K
Melt composition added at t% or more, or Li 2 O / (Nb 2
O 5 + Li 2 O) = 0.56-0.60 from the melt composition without adding K, Li 2 O / (Nb 2) having excellent optical homogeneity.
O 5 + Li 2 O) molar fraction of a method of manufacturing a lithium niobate single crystal, which comprises growing a crystal of a quasi-stoichiometric and stoichiometric composition of 0.495 to 0.50.
【0010】さらに、本発明は、可視から近赤外域のレ
ーザー光を用いて単結晶内にホログラム回折格子を書き
込むことで情報を記録するメモリー素子において、前記
単結晶として請求項1に記載のセリウムを添加したニオ
ブ酸リチウム単結晶を用いたことを特徴とする光素子に
関する。この光素子は、位相型ホログラムメモリをはじ
めとする光増幅装置への応用に極めて有望である。Further, according to the present invention, in a memory element for recording information by writing a hologram diffraction grating in a single crystal by using a laser beam in a visible to near infrared region, the cerium according to claim 1 as the single crystal. The present invention relates to an optical device characterized by using a lithium niobate single crystal to which is added. This optical element is extremely promising for application to optical amplification devices such as phase hologram memories.
【0011】[0011]
【発明の実施の形態】本発明に係るLN単結晶は、セリ
ウムを18ppm以上含み、可視から近赤外域での光吸
収とフォトリフラクティブ感度を増大させたものであっ
て、Li2O/(Nb2O5+Li2O)のモル分率が0.
495〜0.50と、準定比組成および定比組成であ
る。本発明に係るLN単結晶は、Li2O/(Nb2O5
+Li2O)のモル分率が0.485である通常のコン
グルエント組成よりも、モル分率が0.495〜0.5
0と、準定比組成および定比組成である特徴をもってい
るため、結晶の完全性が高く、欠陥密度も低い。さら
に、この結晶組成では、単一分域処理が不要となるた
め、光散乱となるボイドやストリエーション等の結晶欠
陥が非常に少く、結晶組成と光学的均質性に優れてい
る。BEST MODE FOR CARRYING OUT THE INVENTION The LN single crystal according to the present invention contains 18 ppm or more of cerium and has increased light absorption in the visible to near infrared region and photorefractive sensitivity, and is composed of Li 2 O / (Nb 2 O 5 + Li 2 O) has a molar fraction of 0.
495 to 0.50, and a quasi-stoichiometric composition and a stoichiometric composition. The LN single crystal according to the present invention is Li 2 O / (Nb 2 O 5
+ Li 2 O) has a mole fraction of 0.495 to 0.5 as compared with a normal congruent composition having a mole fraction of 0.485.
Since it has a characteristic of 0 and a quasi-stoichiometric composition and a stoichiometric composition, the crystal perfection is high and the defect density is low. Further, with this crystal composition, since single domain treatment is not required, crystal defects such as light scattering voids and striations are very small, and the crystal composition and optical homogeneity are excellent.
【0012】本発明に係るLN単結晶の製造方法は、C
eを添加するLN融液の組成を、従来のような結晶と融
液が同じ組成で平衡共存する一致溶融組成(Li2O/
(Nb2O5+Li2O)のモル分率が0.485)でな
く、(Li2O/(Nb2O5+Li2O)=0.40〜
0.60に、Kを5wt%以上添加した融液組成、また
は、Li2O/(Nb2O5+Li2O)=0.56〜0.
60のKを添加しない融液組成とし、この融液組成から
光学的均質性に優れたLi2O/(Nb2O5+Li2O)
のモル分率が0.495〜0.50の準定比組成および
定比組成の結晶を育成する。The method for producing an LN single crystal according to the present invention comprises C
The composition of the LN melt containing e is the same as the conventional melt composition (Li 2 O / Li 2 O /
The molar fraction of (Nb 2 O 5 + Li 2 O) is not 0.485, but (Li 2 O / (Nb 2 O 5 + Li 2 O) = 0.40 to
Melt composition in which K is added to 0.60 by 5 wt% or more, or Li 2 O / (Nb 2 O 5 + Li 2 O) = 0.56-0.
A melt composition of 60 K was not added, and from this melt composition, Li 2 O / (Nb 2 O 5 + Li 2 O) excellent in optical homogeneity was obtained.
A crystal having a quasi-stoichiometric composition and a stoichiometric composition having a molar fraction of 0.495 to 0.50 is grown.
【0013】この様な組成の結晶は、フローティングゾ
ーン法やトップシーディング法によっても製造される
が、好ましくは、二重坩堝法により結晶を育成すること
により、より高品質で大口径のものが得られる。また、
本組成の融液から育成すれば、結晶される結晶組成のキ
ュリー温度が約1200℃と、通常のコングルエント組
成結晶の1150℃よりも高く、結晶成長温度に近いた
め、アズグロウンの状態でも結晶の大部分は単一分域状
態となっている。このため、従来のコングルエント組成
融液から育成した多分域状態の結晶とは大きく異なり、
多分域結晶で必要となる育成後のポーリング処理を施す
必要性が無いという利点がある。さらに、結晶育成方法
を二重坩堝法とすることにより、結晶が育成される融液
の組成は常に一定に保たれ、かつ、内側坩堝内の融液の
温度変動はきわめて少ないという特徴があるため、従
来、コングルエント組成結晶で見られた光散乱の原因と
なるボイドやストリエーシヨンなども無く、きわめて均
一組成で光学的均質性も良いLN単結晶を製造すること
が可能である。Crystals having such a composition can be produced by a floating zone method or a top seeding method, but preferably, a crystal having a higher quality and a larger diameter is grown by growing the crystal by a double crucible method. can get. Also,
If grown from a melt of this composition, the Curie temperature of the crystal composition to be crystallized is about 1200 ° C., which is higher than the normal congruent composition crystal of 1150 ° C., and close to the crystal growth temperature. The part is in a single domain state. Therefore, it is significantly different from the conventional multi-domain crystal grown from the congruent composition melt,
There is an advantage that it is not necessary to perform the poling treatment after the growth which is necessary for the multi-domain crystal. Further, by adopting a double crucible method as the crystal growth method, the composition of the melt in which the crystal is grown is always kept constant, and the temperature fluctuation of the melt in the inner crucible is extremely small. It is possible to produce an LN single crystal having an extremely uniform composition and good optical homogeneity, without the voids and strays that cause light scattering that have been conventionally observed in congruent composition crystals.
【0014】ここで、簡単に二重坩堝法について説明す
る。LN単結晶の一致溶融組成は、Li2O/(Nb2O
5+Li2O)のモル分率が0.485であるため、一致
溶融組成融液から通常の引き上げ法で得られるLN単結
晶はNb成分過剰となるが、融液の組成を著しくLi成
分過剰(例えば、Li2O/(Nb2O5+Li2O)のモ
ル分率が0.56〜0.60、好ましくは0.58)に
すると、化学量論比組成に近い、すなわち不定比欠陥濃
度を極力抑えた単結晶を得ることができる。しかし、成
長する結晶組成と融液組成が異なると、通常の引き上げ
法では育成が進むにつれ、融液と結晶の組成がより離れ
るため結晶は困難となる。そこで、不定比欠陥の密度や
構造を精密に制御するために二重坩堝法による単結晶育
成を行った。Here, the double crucible method will be briefly described. The congruent melting composition of LN single crystal is Li 2 O / (Nb 2 O
5 + Li 2 O) has a molar fraction of 0.485, the LN single crystal obtained from the congruent melting composition melt by a normal pulling method has an excess of Nb component, but the composition of the melt has a significant excess of Li component. (For example, when the molar fraction of Li 2 O / (Nb 2 O 5 + Li 2 O) is 0.56 to 0.60, preferably 0.58), the composition is close to the stoichiometric composition, that is, nonstoichiometric defects. It is possible to obtain a single crystal whose concentration is suppressed as much as possible. However, if the composition of the growing crystal and the composition of the melt are different, the composition becomes more distant from the melt and the crystal becomes more difficult as the growth progresses by the normal pulling method, which makes the crystal difficult. Therefore, in order to precisely control the density and structure of non-stoichiometric defects, single crystal growth was performed by the double crucible method.
【0015】また、本発明に係る光素子は、可視光から
近赤外光のレーザー光を用いて単結晶内に三次元ホログ
ラムを書き込む光増幅装置に用いられるものであり、三
次元ホログラムは、高速でかつ記憶容量が潜在的に大き
いため、最近マルチメデイア関連の新しい記録方法とし
て将来の発展が期待されているものである。ホログラム
には、銀塩写真をはじめいろいろな材料が使われている
が、メモリへの応用には、光誘起屈折性結晶が最も有力
であると考えられており、特にLN単結晶は、数ある光
誘起屈折性結晶の中でも一番保持時間の長い材料であ
り、これまでメモリの実験には、ほとんどが遷移金属で
あるFeを添加することで回折効率を大きくしたLN単
結晶が用いられている。しかしながら、Feを添加した
コングルエントLN単結晶は、約400〜600nmの
可視光領域でしかホログラム記録材料として使えなかっ
た。Further, the optical element according to the present invention is used in an optical amplifying device for writing a three-dimensional hologram in a single crystal by using a laser beam of visible light to near infrared light. Since it is high-speed and has a large storage capacity, it is expected to be developed in the future as a new recording method related to multimedia. Although various materials such as silver salt photographs are used for holograms, photoinduced refraction crystals are considered to be the most effective for memory applications. In particular, LN single crystals are numerous. It is the material with the longest retention time among the photo-induced refraction crystals, and so far, most of the memory experiments have used LN single crystals whose diffraction efficiency is increased by adding Fe, which is a transition metal. . However, the congruent LN single crystal containing Fe was usable as a hologram recording material only in the visible light region of about 400 to 600 nm.
【0016】本発明者らは、Ceを含むLi2O/(N
b2O5+Li2O)のモル分率が0.495〜0.50
の準定比組成および定比組成の結晶で、光学的に均質か
つ高品質で、可視光域よりもさらに長波長の近赤外域の
レーザー光を用いるレーザー装置で要求されるに十分大
きな回折効率と十分早い書き込み速度が得られると言う
現象を初めて見い出した。本発明によるLN単結晶を用
いた三次元ホログラムを書き込む光素子は、本発明者に
よって初めて可能ならしめられたものである。The present inventors have found that Li 2 O / (N containing Ce is used.
b 2 O 5 + Li 2 O) has a mole fraction of 0.495 to 0.50.
Crystals of quasi-stoichiometric composition and stoichiometric composition, which are optically homogeneous and of high quality, and have a diffraction efficiency sufficiently high for a laser device that uses laser light in the near-infrared region, which has a longer wavelength than the visible light region. For the first time, I found a phenomenon that a sufficiently high writing speed can be obtained. The optical element for writing a three-dimensional hologram using the LN single crystal according to the present invention was made possible for the first time by the present inventor.
【0017】[0017]
【実施例】本発明で育成されたLN結晶の光学特性をま
ず評価した。図1は、紫外から近赤外光域における単結
晶の光吸収特性(横軸は波長、縦軸は光吸収係数)を示
した図である。図に示すように、Ceを添加すること
で、無添加の定比組成LN結晶では見られなかった良好
な光吸収が可視から近赤外光域で観測される。比較のた
めに鉄を添加した定比組成単結晶の光吸収特性を図中に
示す。Ceを添加した結晶では、鉄添加結晶よりも約5
20〜820nmの可視から近赤外域での光吸収が増大
していることがわかる。EXAMPLE First, the optical characteristics of the LN crystal grown in the present invention were evaluated. FIG. 1 is a diagram showing the light absorption characteristics of a single crystal in the ultraviolet to near-infrared light region (horizontal axis represents wavelength, vertical axis represents light absorption coefficient). As shown in the figure, by adding Ce, good light absorption, which was not seen in the stoichiometric LN crystal without addition, was observed in the visible to near-infrared light region. For comparison, the light absorption characteristics of stoichiometric single crystals to which iron is added are shown in the figure. The crystal added with Ce is about 5 times more than the crystal added with iron.
It can be seen that light absorption in the near-infrared region is increased from visible light of 20 to 820 nm.
【0018】図2には、Ceを81ppm含むLN単結
晶の紫外から近赤外光域における光透過特性を示す。図
に示すアズグロウン状態、酸化処理後、還元処理後の違
いから分かるように、結晶の熱処理状態により光透過特
性は大きく変化する。育成を1000℃の酸素中で熱処
理(酸化処理)することにより可視から近赤外域での吸
収は、ほとんど見られなくなる。結晶中のCeは、3
価、4価の価数変化をしやすいことはよく知られている
が、LN単結晶中でCeがどのような状態になっている
のかは、まだよくわかっていないが、熱処理による光吸
収特性の振る舞いの変化の様子から、可視から近赤外域
での吸収はCeの3価によるもので、十分な結晶の酸化
によって、この波長域では、吸収のないCe4価に価数
変化するためと思われる。また、アズグロウン結晶で
は、可視から近赤外域でも吸収が若干みられるため、3
価と4価の両方を含むものと思われる。以上の光吸収特
性からLN単結晶中に含まれるCeイオンは、可視から
近赤外域での光吸収の増大に寄与し、光学的に活性なC
eイオンは、この波長域でのフォトリフラクティブ感度
の向上に重要な役割を果たすことが期待される。FIG. 2 shows the light transmission characteristics of the LN single crystal containing 81 ppm of Ce in the ultraviolet to near infrared light region. As can be seen from the difference in the as-grown state, after the oxidation treatment, and after the reduction treatment shown in the figure, the light transmission characteristics greatly change depending on the heat treatment state of the crystal. When the growth is heat-treated (oxidized) in oxygen at 1000 ° C., almost no absorption is observed in the visible to near-infrared region. Ce in the crystal is 3
It is well known that the valence of tetravalent or tetravalent is easily changed, but it is not yet clear what kind of state Ce is in the LN single crystal, but the light absorption property by heat treatment is unknown. From the state of change in behavior, it is considered that absorption in the visible to near-infrared region is due to the trivalence of Ce, and due to sufficient oxidation of the crystal, the valence changes to Ce4 valence without absorption in this wavelength region. Be done. In addition, as-grown crystals show some absorption in the visible to near-infrared region.
It seems to include both valence and valence. From the above light absorption characteristics, Ce ions contained in the LN single crystal contribute to the increase of light absorption in the visible to near-infrared region, and are optically active C
The e-ions are expected to play an important role in improving the photorefractive sensitivity in this wavelength range.
【0019】そこで、次に、本発明で育成されたLN結
晶のフォトリフラクティブ特性を光波混合実験により評
価した。実験の光学系を図3に模式的に示す。図3に示
すように、レーザー光源1により、それぞれポンプ光と
プローブ光と呼ぶ二つのコヒーレントな光波を光誘起屈
折性結晶であるLN単結晶2内で交わらせ、複数の干渉
縞を形成させた。この干渉縞の空間的な強度変化に対応
した空間電場が形成され、その結果として、結晶中に屈
折率格子が形成された。ここでは、ポンプ光およびプロ
ーブ光としてNd:YAGレーザーの二倍波である波長
532nmの緑色光を用いた。実験に於いては、ビーム
直径は、それぞれ10mm、ポンプ光とプローブ光の光
強度比をほぼl:lで一定とした。また、このときの二
波の交差角度は、回折効率が最大となるように約15゜
としたので、干渉縞の間隔は、約0.9ミクロンであ
る。さらに、結晶中に形成される屈折率格子に対し別の
角度から回折効率測定用レーザー3により波長633n
mのHe一Neレーザー光を入射し、He−Ne光が光
誘起屈折性結晶を通過する際の回折効率を検出器4で検
出して求めることで、結晶中に形成されるフォトリフラ
クティブ特性を評価した。Then, next, the photorefractive characteristic of the LN crystal grown in the present invention was evaluated by a light wave mixing experiment. The experimental optical system is schematically shown in FIG. As shown in FIG. 3, the laser light source 1 intersects two coherent light waves, which are respectively called pump light and probe light, within the LN single crystal 2 which is a photoinduced refractive crystal to form a plurality of interference fringes. . A spatial electric field corresponding to the spatial intensity change of the interference fringes was formed, and as a result, a refractive index grating was formed in the crystal. Here, green light having a wavelength of 532 nm, which is a double wave of an Nd: YAG laser, was used as the pump light and the probe light. In the experiment, the beam diameter was 10 mm, and the light intensity ratio between the pump light and the probe light was kept constant at about 1: l. Further, the crossing angle of the two waves at this time was set to about 15 ° so that the diffraction efficiency was maximized, so that the interval of the interference fringes was about 0.9 micron. Further, the wavelength 633n is measured by the laser 3 for measuring the diffraction efficiency from another angle with respect to the refractive index grating formed in the crystal.
The He-Ne laser light of m is incident, and the diffraction efficiency when the He-Ne light passes through the photoinduced refractive crystal is detected by the detector 4 to obtain the photorefractive characteristic formed in the crystal. evaluated.
【0020】結晶中にフォトリフラクティブ屈折率格子
が形成される結果、図4に示すように、オシロスコープ
5上には、回折されたHe−Neレーザー光の増大が観
察され、これから二波混合の前後の回折効率の大きさと
その速度を求めた。この測定により、フォトリフラクテ
ィブ効果によって結晶内に誘起された屈折率変化の大き
さΔnが(1)式から求められ、フォトリフラクティブ
感度Sは(2)式から求められた。
η=(π*Δn*d/λ)2 (1)、
S=(α*I*t/Δn)-1 (2)、
ここで回折効率η、結晶厚みd、He−Neレーザー波
長λ、結晶の吸収係数α、レーザー光強度I、書き込み
時間tである。As a result of the formation of the photorefractive refractive index grating in the crystal, an increase in the diffracted He-Ne laser light was observed on the oscilloscope 5, as shown in FIG. The magnitude of the diffraction efficiency and its speed were obtained. By this measurement, the magnitude Δn of the refractive index change induced in the crystal by the photorefractive effect was obtained from the equation (1), and the photorefractive sensitivity S was obtained from the equation (2). η = (π * Δn * d / λ) 2 (1), S = (α * I * t / Δn) -1 (2), where diffraction efficiency η, crystal thickness d, He-Ne laser wavelength λ, The absorption coefficient α of the crystal, the laser light intensity I, and the writing time t.
【0021】図4に示すように、Ceを約40ppm含
む定比組成のLN単結晶では、光波混合によってHe−
Neレーザー光が回折され、約20秒の照射で約60%
と、非常に大きな回折効率が得られた。これから求めた
結晶の屈折率変化の大きさΔnは、1.5*10-5、フ
ォトリフラクティブ感度Sは、2.5*10-7であり、
Ceを含む定比組成のLN単結晶が優れたフォトリフラ
クティブ感度を示すということがわかった。そこで、さ
らに同様の測定を種々の組成が異なる単結晶について行
ない、フォトリフラクティブ材料として好ましい結晶組
成を求めた。その結果を表1に示す。As shown in FIG. 4, in the LN single crystal having a stoichiometric composition containing about 40 ppm of Ce, He--
Ne laser light is diffracted, and about 60% by irradiation for about 20 seconds
And a very large diffraction efficiency was obtained. The magnitude Δn of the change in the refractive index of the crystal obtained from this is 1.5 * 10 −5 , and the photorefractive sensitivity S is 2.5 * 10 −7 .
It was found that LN single crystals with a stoichiometric composition containing Ce exhibit excellent photorefractive sensitivity. Therefore, the same measurement was performed on single crystals having different compositions to determine a preferable crystal composition as a photorefractive material. The results are shown in Table 1.
【0022】表1に見られるように、無添加コングルエ
ント組成LN結晶では屈折率変化は観測されなかった。
これに対し、定比組成結晶および準定比組成結晶では、
無添加のものでもHe−Neレーザーの回折が見られ、
屈折率変化とフォトリフラクティブ感度が得られた。L
N単結晶の組成の違いによってフォトリフラクティブ特
性が大きく異なる理由は、まだ完全には解明されてはい
ないが、定比組成および準定比組成の結晶では、不定比
欠陥がコングルエント組成結晶と比べて1桁以上少ない
結晶であり、この不定比欠陥がフォトリフラクティブ特
性に大きく影響していることは明らかである。As can be seen from Table 1, no change in refractive index was observed in the LN crystal of the additive-free congruent composition.
On the other hand, in the stoichiometric crystal and the quasi-stoichiometric crystal,
He-Ne laser diffraction can be seen even without addition,
The refractive index change and photorefractive sensitivity were obtained. L
The reason why the photorefractive properties greatly differ depending on the composition of N single crystal has not been completely clarified yet, but in the crystal of stoichiometric composition and quasi-stoichiometric composition, the non-stoichiometric defect is compared with the congruent composition crystal. The number of crystals is one digit or less, and it is clear that this non-stoichiometric defect greatly affects the photorefractive characteristics.
【0024】実施例1
市販の高純度Li2CO3、Nb2O5、K2CO3(それぞ
れ純度99.99%)の原料粉末を準備した。次にスト
イキオメトリ結晶を育成するための原料として、Li2
CO3:Nb2O5の比が0.40:0.60〜0.6
0:0.40の割合で混合した原料にK2CO3を2〜1
0mol%添加して混合したものを作成した。これらの
種々の組成の原料を、それぞれ1ton/cm2の静水
圧でラバープレス成形し、それぞれを約1050℃の酸
素中で焼結した。次に、単結晶育成に際して、得られた
焼結原料を予め坩堝内に充填し、次に坩堝を加熱して融
液を作成した。ここで、坩堝として白金坩堝を用いた。
種結晶はz軸方位に切り出したLN単結晶を用いた。Example 1 Commercially available raw material powders of high purity Li 2 CO 3 , Nb 2 O 5 and K 2 CO 3 (each having a purity of 99.99%) were prepared. Next, as a raw material for growing the stoichiometry crystal, Li 2
CO 3: The ratio of Nb 2 O 5 is 0.40: 0.60 to 0.6
0: the raw materials are mixed at a ratio of 0.40 to K 2 CO 3 2 to 1
A mixture was prepared by adding 0 mol%. Each of these raw materials having various compositions was rubber-press molded under a hydrostatic pressure of 1 ton / cm 2 , and each was sintered in oxygen at about 1050 ° C. Next, when growing a single crystal, the obtained sintering raw material was filled in the crucible in advance, and then the crucible was heated to form a melt. Here, a platinum crucible was used as the crucible.
As the seed crystal, an LN single crystal cut in the z-axis direction was used.
【0025】まず、Li2CO3:Nb2O5=0.50:
0.50に、K2CO3を5mol%添加した組成の融液
を用いて育成を試みた。育成前に融液を約20時間保持
し、融液組成を均一化させるために、育成に際して坩堝
を0.2rpmの早さで種結晶と反対方向にゆっくり回
転させた。育成条件は、結晶回転速度を10rpm、引
き上げ速度を0.1mm/hで一定とし、育成雰囲気を
大気中とした。TSSG方法により約2週間の育成によ
り直径約25mm、長さ約30mmの大きさの無色透明
でクラックのない定比組成LN結晶体を得た。また、原
料組成の範囲をLi2CO3:Nb2O5の比が0.40:
0.60〜0.60:0.40で、K2CO3を2〜10
mol%添加したもので育成した場合には、同様の条件
で育成することにより、同様な光学的に透明な単結晶体
が得られた。First, Li 2 CO 3 : Nb 2 O 5 = 0.50:
Attempts were made to grow using a melt having a composition in which 5 mol% of K 2 CO 3 was added to 0.50. The melt was held for about 20 hours before the growth, and in order to make the melt composition uniform, the crucible was slowly rotated at a speed of 0.2 rpm in the direction opposite to the seed crystal during the growth. As for the growth conditions, the crystal rotation speed was 10 rpm, the pulling speed was constant at 0.1 mm / h, and the growth atmosphere was the atmosphere. By the TSSG method, the colorless and transparent stoichiometric LN crystal having a diameter of about 25 mm and a length of about 30 mm was obtained by growth for about 2 weeks. In addition, in the range of raw material composition, the ratio of Li 2 CO 3 : Nb 2 O 5 is 0.40:
0.60-0.60: 0.40, K 2 CO 3 2-10
When grown with the mol% added, the same optically transparent single crystal was obtained by growing under the same conditions.
【0026】同様の方法で、Ceの添加濃度を各々変え
た単結晶を育成した。Ceの添加量は、20〜1000
ppmの範囲で育成を行った。Ceを添加した結晶は、
Ceの添加量の増加にともない少しずつ淡い赤紫色に着
色する様子が見られた。次に連続原料供給二重坩堝法に
よりCeを添加した定比組成のLN単結晶の育成を試み
た。市販の高純度Li2CO3、Nb2O5(それぞれ純度
99.999%)の原料粉末を準備し、Li成分過剰原
料としてLi2CO3:Nb2O5の比が0.56:0.4
4〜0.60:0.40の割合で混合し、化学量論比組
成原料としてLi2CO3:Nb2O5=0.50:0.5
0の割合で混合した。これに、酸化セリウムを20〜5
00ppmの範囲で添加した原料を準備した。次に、1
ton/cm2の静水圧でラバープレス成形し、それぞ
れを約1050℃の酸素中で焼結し原料棒を作成した。
また、連続供給用粉末原料として混合済みの化学量論比
組成原料を約1050℃の酸素中で焼結して化学量論比
組成原料も作成した。In the same manner, single crystals with different Ce addition concentrations were grown. The amount of Ce added is 20 to 1000.
Growing was performed in the range of ppm. The crystal to which Ce is added is
It was observed that the color gradually changed to pale reddish purple with an increase in the amount of Ce added. Next, an attempt was made to grow an LN single crystal having a stoichiometric composition to which Ce was added by the continuous raw material supply double crucible method. Commercially available raw material powders of high-purity Li 2 CO 3 and Nb 2 O 5 (each having a purity of 99.999%) were prepared, and the ratio of Li 2 CO 3 : Nb 2 O 5 was 0.56: 0 as the Li component excess raw material. .4
4 to 0.60: in a ratio of 0.40, Li 2 CO 3 as a stoichiometric composition material: Nb 2 O 5 = 0.50: 0.5
Mixed at a ratio of 0. Add to this cerium oxide 20 to 5
The raw material added in the range of 00 ppm was prepared. Then 1
Rubber press molding was performed at a hydrostatic pressure of ton / cm 2 , and each was sintered in oxygen at about 1050 ° C. to prepare a raw material rod.
A stoichiometric composition raw material was prepared by sintering the mixed stoichiometric composition raw material as a powder material for continuous supply in oxygen at about 1050 ° C.
【0027】次に、二重坩堝法による単結晶育成に際し
て、得られたLi成分過剰原料を内側坩堝に、化学量論
比組成原料を外側坩堝に予め充填し、次に坩堝を加熱し
て融液を作成した。二重坩堝法においては、坩堝が二重
構造となっており、内側坩堝の底に外側坩堝から内側坩
堝に通じる穴を設けた。さらに、Li2O/(Nb2O5
+Li2O)のモル分率が0.56〜0.60のLi成
分過剰の内側坩堝の融液から育成される結晶成長重量を
ロードセルにより測定し、結晶化した成長量に見合った
量のLi2O/(Nb2O5+Li2O)のモル分率が0.
50の化学量論組成比の原料を外側坩堝に自動的に供給
した。Next, when growing a single crystal by the double crucible method, the obtained Li component excess raw material is pre-filled in the inner crucible and the stoichiometric composition raw material is filled in the outer crucible in advance, and then the crucible is heated to melt. A liquid was created. In the double crucible method, the crucible has a double structure, and the bottom of the inner crucible is provided with a hole leading from the outer crucible to the inner crucible. Furthermore, Li 2 O / (Nb 2 O 5
+ Li 2 O) has a molar fraction of 0.56 to 0.60, the weight of crystal growth grown from the melt of the inner crucible having an excess of Li component is measured by a load cell, and an amount of Li corresponding to the amount of crystallized growth The molar fraction of 2 O / (Nb 2 O 5 + Li 2 O) is 0.
A raw material having a stoichiometric composition ratio of 50 was automatically fed to the outer crucible.
【0028】この方法により、外側から内側への原料の
流れ混みにより、結晶を常に一定深さで一定組成を保っ
た融液から育成できるため、均質組成の大型単結晶を育
成することが初めて可能となった。ここで、育成に用い
た坩堝は白金でできており、種結晶は、z軸方位に切り
出した5mm×5mm×長さ60mmの単一分域状態に
あるLN単結晶を用いた。育成条件は、結晶回転速度を
5rpm、引き上げ速度を0.3〜0.5mm/h、雰
囲気を大気中とした。また、融液組成の均一化のため
に、坩堝を0.2rpmの早さで種結晶と反対方向にゆ
っくり回転させた。約1.5週間の育成により直径約3
6mm、長さ約50mmでクラックのない薄い赤紫色に
着色したCe添加のLN結晶体を得た。According to this method, a crystal can be grown from a melt having a constant composition at a constant depth due to the mixture of raw materials from the outside to the inside, so that a large single crystal having a homogeneous composition can be grown for the first time. Became. Here, the crucible used for growth was made of platinum, and the seed crystal used was an LN single crystal in a single domain state of 5 mm × 5 mm × length 60 mm cut out in the z-axis direction. The growth conditions were a crystal rotation speed of 5 rpm, a pulling speed of 0.3 to 0.5 mm / h, and an atmosphere of air. Further, in order to make the melt composition uniform, the crucible was slowly rotated at a speed of 0.2 rpm in the direction opposite to the seed crystal. Approximately 3 diameters after growing for about 1.5 weeks
A Ce-added LN crystal body having a length of 6 mm and a length of about 50 mm and colored in a light reddish purple color without cracks was obtained.
【0029】TSSG法および二重坩堝法の両方法で得
られたアズグロウン結晶を種々の方位に切断し、内部の
分域状態を観察したところ、結晶の表面近傍のごく一部
を除いて内部は均一に単一分域状態になっていることが
認められた。得られたLN単結晶は、化学分析により定
比組成に近く、Li2O/(Nb2O5+Li2O)のモル
分率が0.495〜0.500にあり、不定比欠陥濃度
が極力抑えられた定比組成結晶および準定比組成単結晶
であることを確認した。次に、育成した結晶のキュリー
温度を示差熱分析法により測定したところ、結晶の各部
分から切り出された試料のキュリー温度は、いづれも1
196〜1200.0℃の範囲にあり、さらに一本の結
晶から切り出した試料のキュリー温度は、試料の切り出
し位置に依らず一定で、結晶組成の均質性は極めて良い
ことを確認した。The as-grown crystals obtained by both the TSSG method and the double crucible method were cut in various orientations, and the internal domain state was observed. The inside of the crystal was observed except for a small part near the surface of the crystal. It was confirmed that the cells were uniformly in a single domain. The obtained LN single crystal was close to a stoichiometric composition by chemical analysis, had a Li 2 O / (Nb 2 O 5 + Li 2 O) mole fraction of 0.495 to 0.500, and had a nonstoichiometric defect concentration. It was confirmed that the crystals were stoichiometric composition crystals and quasi-stoichiometric composition single crystals that were suppressed as much as possible. Next, when the Curie temperature of the grown crystal was measured by a differential thermal analysis method, the Curie temperature of the sample cut out from each part of the crystal was 1
It was confirmed that the Curie temperature of the sample cut out from one crystal was in the range of 196 to 1200.0 ° C. and was constant regardless of the cutting position of the sample, and the homogeneity of the crystal composition was extremely good.
【0030】さらに、結晶中に含まれるCe量を化学分
析で求めた。育成した結晶中のCeの分布を調べたとこ
ろ、Ceの偏析係数は約0.2と、1より小さいが、組
成が均質にコントロールされており、結晶内でのCeの
分布も均一性はよいことが確認された。従来の結晶は、
単一分域化するためにポーリングという数十時間の工程
時間を要する分極処理をする必要があり、LN単結晶中
に添加されたCeは分極処理により結晶中を動くため、
結晶中に濃度の著しい勾配ができ、結晶の光学特性が不
均一になるという問題があったが、本発明でのCe添加
の定比組成および準定比組成LN結晶では、分極処理を
する必要がないため、この様な問題は解決されるという
メリットもあることが明らかにされた。Further, the amount of Ce contained in the crystal was determined by chemical analysis. When the distribution of Ce in the grown crystal was examined, the segregation coefficient of Ce was about 0.2, which was smaller than 1, but the composition was controlled homogeneously, and the distribution of Ce in the crystal was also uniform. It was confirmed. Conventional crystals are
It is necessary to perform poling, which requires a process time of several tens of hours, such as poling in order to form a single domain, and since Ce added in the LN single crystal moves in the crystal by the poling treatment,
There is a problem that a remarkable concentration gradient occurs in the crystal and the optical characteristics of the crystal become non-uniform. However, in the present invention, the Ce-added stoichiometric composition and quasi-stoichiometric LN crystal require polarization treatment. It was revealed that there is also the merit that such a problem will be solved because there is no.
【0031】さらに、試料の光学的均質性をレーザー干
渉装置により観察したところ、結晶欠陥により引き起こ
されるストリエーシヨンやボイドなどの欠陥が見られ
ず、試料全体で1×10-5以上の高い屈折率均質性があ
ることが確認された。さらに、結晶中に含まれる散乱に
ついてレーザマイクロプローブ法により評価した。本発
明で育成されたLN結晶では、レーザーの散乱は全く観
察されず、結晶品質が優れていることが認められた。Further, when the optical homogeneity of the sample was observed by a laser interference device, defects such as striations and voids caused by crystal defects were not observed, and high refraction of 1 × 10 -5 or more was observed in the entire sample. It was confirmed that there was rate homogeneity. Furthermore, the scattering contained in the crystal was evaluated by the laser microprobe method. In the LN crystal grown in the present invention, no laser scattering was observed and it was confirmed that the crystal quality was excellent.
【0032】実施例2
次に、可視光および近赤外光のレーザー光を用いて単結
晶内に三次元ホログラムを書き込む光レーザ装置を試作
した。装置の構成概略を図5に示す。この装置は、本発
明のホログラム回折効率の高いLN単結晶6を用いた角
度多重方式による体積型ホログラムメモリー装置であ
る。デジタルの画像入カデータは、空間光変調器9上に
図形として展開される。次に、これをレーザー光で読み
出し、ホログラムの物体波とした。これにほぼ直角に参
照波を入射し、干渉縞を記録媒質であるLN単結晶6中
に書き込んだ。書き込み用のレーザーとして波長532
nmのNd:YAG−SHGレーザー7と、波長780
nmの半導体レーザーを用いた。いずれの波長に対して
も、Ceを含む定比組成および準定比組成LN単結晶は
優れたフォトリフラクティブ感度を示すため、高効率で
フォトリフラクティブ干渉縞が形成される。Example 2 Next, an optical laser device for writing a three-dimensional hologram in a single crystal by using visible and near-infrared laser beams was manufactured. A schematic configuration of the device is shown in FIG. This device is a volume hologram memory device of an angle multiplexing system using the LN single crystal 6 having a high hologram diffraction efficiency of the present invention. The digital image input data is developed as a figure on the spatial light modulator 9. Next, this was read out with a laser beam and used as a hologram object wave. A reference wave was incident on this at a substantially right angle, and interference fringes were written in the LN single crystal 6 as a recording medium. Wavelength 532 as laser for writing
nm Nd: YAG-SHG laser 7, wavelength 780
A semiconductor laser of nm was used. At any wavelength, the stoichiometric composition and quasi-stoichiometric composition LN single crystal containing Ce exhibit excellent photorefractive sensitivity, so that photorefractive interference fringes are formed with high efficiency.
【0033】ここで、LN結晶は、結晶のc軸が干渉縞
の方向に直行させるように配置されており、高精度に回
転させることが可能なステージ8上に載せた。結晶サイ
ズは,l×l×lcm3である。結晶を少しずつ変えな
がら、ブラック回折の選択性を利用し約100枚のデー
タを多重記録した。これらのデ一夕は参照波により再生
され、二次元光検出器10により電気信号に変換した。
ここでのホログラム記録の特徴は、屈折率が変化する位
相型ホログラムであるため、高い回折効率が期待される
ことと、現像処理を必要とせず干渉縞を照射するだけで
回折格子を書き込むことができ、更に、この一度書き込
まれたホログラムは保持できることである。 本発明に
よるCeを添加した定比組成および準定比組成のLN単
結晶は、従来の結晶よりもさらに短時間でしかも近赤外
のレーザー光を用いても書き込みが可能となった。本構
成におけるデータの記録密度は、回折効率と雑音の大き
さによって決まる。従来、LN単結晶の不均一性による
ランダムな光散乱が原因である雑音が問題とされていた
が、本発明によるLN単結晶では可視から近赤外光に対
して回折効率が高く、しかも結晶が均質で散乱がないた
め雑音が大幅に低減し、記録密度が向上できることが確
認された。Here, the LN crystal is placed so that the c-axis of the crystal is orthogonal to the direction of the interference fringes, and is placed on the stage 8 which can be rotated with high precision. The crystal size is 1 × 1 × 1 cm 3 . While changing the crystal little by little, the data of about 100 sheets were multi-recorded by utilizing the selectivity of black diffraction. These data were reproduced by the reference wave and converted into an electric signal by the two-dimensional photodetector 10.
The feature of hologram recording here is that it is a phase-type hologram in which the refractive index changes, so high diffraction efficiency is expected, and it is possible to write a diffraction grating simply by irradiating interference fringes without requiring development processing. That is, the hologram once written can be held. The LN single crystal having a stoichiometric composition and a quasi-stoichiometric composition to which Ce is added according to the present invention can be written in a shorter time than a conventional crystal and even by using a near infrared laser beam. The data recording density in this configuration is determined by the diffraction efficiency and the magnitude of noise. Conventionally, noise caused by random light scattering due to inhomogeneity of the LN single crystal has been a problem, but the LN single crystal according to the present invention has a high diffraction efficiency from visible light to near infrared light, and the crystal It was confirmed that the noise was drastically reduced and the recording density could be improved because it was homogeneous and had no scattering.
【0034】[0034]
【発明の効果】以上詳しく述べたように、本発明によれ
ば、Ceを添加した定比組成および準定比組成のLN単
結晶の組成とすることにより、可視から近赤外域での光
吸収とフォトリフラクティブ感度が高く優れたLN単結
晶が得られる。さらに、不定比欠陥量を制御し結晶的に
も均質かつ高品質で、かつフォトリフラクティブ応答速
度を向上させたLN単結晶を提供することが可能であ
る。これらのことから、この特性を利用することによ
り、LN単結晶を用いて、可視から近赤外レーザを用い
た高速で起憶容量が大きく、かつ高速書き込みの光素子
を提供することが可能である。As described above in detail, according to the present invention, the absorption of light in the visible to near infrared region can be achieved by using the composition of LN single crystal having a stoichiometric composition and a quasi-stoichiometric composition to which Ce is added. And an excellent LN single crystal having high photorefractive sensitivity can be obtained. Furthermore, it is possible to provide an LN single crystal that controls the amount of non-stoichiometric defects, is crystallographically homogeneous and has high quality, and has an improved photorefractive response speed. From these facts, by utilizing this characteristic, it is possible to provide an optical element using a LN single crystal, which uses a visible to near-infrared laser at a high speed with a large storage capacity and at a high speed. is there.
【図1】Ceを添加した定比組成LN単結晶の紫外から
近赤外光域での光吸収係数を示した図。FIG. 1 is a diagram showing the light absorption coefficient in the ultraviolet to near infrared light region of a stoichiometric LN single crystal to which Ce is added.
【図2】Ceを添加した定比組成LN単結晶の熱処理状
態による光透過特性の変化を示した図。FIG. 2 is a diagram showing changes in light transmission characteristics of a stoichiometric LN single crystal to which Ce is added depending on a heat treatment state.
【図3】光波混合によりLN単結晶内にホログラムを書
き込み、回折効率を求める実験装置を模式的に示した
図。FIG. 3 is a diagram schematically showing an experimental device for writing a hologram in an LN single crystal by light wave mixing to obtain a diffraction efficiency.
【図4】光波混合によるHe−Neレーザー光の回折効
率の時間依存性を示した図。FIG. 4 is a diagram showing time dependence of diffraction efficiency of He—Ne laser light by light wave mixing.
【図5】可視光および近赤外光のレーザー光を用いて単
結晶内に三次元ホログラムを書き込む光素子の構成を略
して示した図。FIG. 5 is a diagram schematically showing the configuration of an optical element for writing a three-dimensional hologram in a single crystal by using visible light and near infrared laser light.
6 LN単結晶 7 Nd:YAG−SHGレーザー 10 二次元光検出器 6 LN single crystal 7 Nd: YAG-SHG laser 10 Two-dimensional photodetector
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 JIN G.et al.,Grow th of Ce: LiNbO3 c rystal and researc h of phase conjuca tion,Journal of sy nthetic crystals(人 工晶体学報),1992年,Vol.21,N o.4,Nov.1992,pp.362−366 MALOVICHKO G.I.et al.,Characterizat ion of stoichiomet ric LiNbO3 grown f rom melts containi ng K20,Applied Phys ics A,1993年,Vol.56,p p.103−108 北村健二ほか,LiNbO3の不定比 欠陥と光学特性,応用物理,1996年,第 65巻,第9号,pp.931−935 (58)調査した分野(Int.Cl.7,DB名) C30B 1/00 - 35/00 CA(STN) JICSTファイル(JOIS)─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JING. et al. , Grow of of Ce: LiNbO3 crystal and rehearse of phase conjucation, Journal of synthetical crystals, 1992, Vol. 21, No. 4, Nov. 1992, pp. 362-366 MALOVICHKO G. I. et al. , Characterization of stoichiometry LInbO3 grown from melts contentin K K, Applied Physics A, 1993, Vol. 56, pp. 103-108 Kenji Kitamura et al., Nonstoichiometric defects and optical properties of LiNbO3, Applied Physics, 1996, Vol. 65, No. 9, pp. 931-935 (58) Fields surveyed (Int.Cl. 7 , DB name) C30B 1/00-35/00 CA (STN) JISST file (JOIS)
Claims (4)
m以下含み、可視から近赤外域での光吸収とフォトリフ
ラクティブ感度を増大させたものであって、Li2O/
(Nb2O5+Li2O)のモル分率が0.495〜0.
50であることを特徴とするセリウムを添加した準定比
組成および定比組成のニオブ酸リチウム単結晶。1. Cerium containing 18 ppm or more and 1000 pp
m comprises the following, there is with increased light absorption and photorefractive sensitivity in the near infrared region from visible, Li 2 O /
(Nb 2 O 5 + Li 2 O) molar fraction of 0.495 to 0.
A single crystal of lithium niobate having a quasi-stoichiometric composition and a stoichiometric composition to which cerium is added, which is 50.
リチウム単結晶を製造するに際し、Li2O/(Nb2O
5+Li2O)=0.40〜0.60に、Kを5wt%以
上添加した融液組成から、光学的均質性に優れたLi2
O/(Nb2O5+Li2O)のモル分率が0.495〜
0.50の準定比組成および定比組成の結晶を育成する
ことを特徴とするニオブ酸リチウム単結晶の製造方法。2. When producing the cerium-doped lithium niobate single crystal according to claim 1, Li 2 O / (Nb 2 O)
5 + Li 2 O) = 0.40 to 0.60, and from the melt composition in which K is added in an amount of 5 wt% or more, Li 2 having excellent optical homogeneity is obtained.
O / (Nb 2 O 5 + Li 2 O) molar fraction of 0.495~
A method for producing a lithium niobate single crystal, which comprises growing a crystal having a quasi-stoichiometric composition and a stoichiometric composition of 0.50.
リチウム単結晶を製造するに際し、Li2O/(Nb2O
5+Li2O)=0.56〜0.60のKを添加しない融
液組成から、光学的均質性に優れたLi2O/(Nb2O
5+Li2O)のモル分率が0.495〜0.50の準定
比組成および定比組成の結晶を育成することを特徴とす
るニオブ酸リチウム単結晶の製造方法。3. When producing the cerium-doped lithium niobate single crystal according to claim 1, Li 2 O / (Nb 2 O)
5 + Li 2 O) = 0.56-0.60 from the melt composition without addition of K, from which Li 2 O / (Nb 2 O) having excellent optical homogeneity was obtained.
A method for producing a lithium niobate single crystal, which comprises growing a crystal having a quasi-stoichiometric composition and a stoichiometric composition having a mole fraction of 5 + Li 2 O) of 0.495 to 0.50.
単結晶内にホログラム回折格子を書き込むことで情報を
記録するメモリー素子において、前記単結晶として請求
項1に記載のセリウムを添加したニオブ酸リチウム単結
晶を用いたことを特徴とする光素子。4. A memory device for recording information by writing a hologram diffraction grating in a single crystal using a laser beam in the visible to near infrared region, wherein the cerium-added niobium as claimed in claim 1 is used as the single crystal. An optical device characterized by using a lithium oxide single crystal.
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| JP36833697A JP3390905B2 (en) | 1997-12-26 | 1997-12-26 | Cerium-doped lithium niobate single crystal, method for producing the same, and optical element including the single crystal |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36833697A JP3390905B2 (en) | 1997-12-26 | 1997-12-26 | Cerium-doped lithium niobate single crystal, method for producing the same, and optical element including the single crystal |
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| JP3390905B2 true JP3390905B2 (en) | 2003-03-31 |
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Non-Patent Citations (3)
| Title |
|---|
| JIN G.et al.,Growth of Ce: LiNbO3 crystal and research of phase conjucation,Journal of synthetic crystals(人工晶体学報),1992年,Vol.21,No.4,Nov.1992,pp.362−366 |
| MALOVICHKO G.I.et al.,Characterization of stoichiometric LiNbO3 grown from melts containing K20,Applied Physics A,1993年,Vol.56,pp.103−108 |
| 北村健二ほか,LiNbO3の不定比欠陥と光学特性,応用物理,1996年,第65巻,第9号,pp.931−935 |
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