JP3393440B2 - Semiconductor device and bump forming method - Google Patents

Description

Detailed Description of the Invention

[0001]

[Table of Contents] The present invention will be described in the following order. Industrial applications Conventional technology (Figs. 6 to 8) Problems to be Solved by the Invention (FIGS. 7 to 8) Means for Solving the Problems (FIGS. 1 to 5) Action (Figs. 1-5) Example (1) First embodiment (FIG. 1) (2) Second embodiment (FIGS. 1 and 2) (3) Third embodiment (FIGS. 1 to 3) (4) Fourth embodiment (FIGS. 1 to 4) (5) Other embodiments (FIGS. 1 to 5) The invention's effect

[0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a bump forming method, and more particularly to a flip chip type semiconductor chip and a bump forming method for joining the semiconductor chip and the substrate between the semiconductor chip and the substrate. It is suitable.

[0003]

2. Description of the Related Art Conventionally, as a technique for forming a bump on a pad of a bare semiconductor chip (flip chip) which has not been packaged, a soldering method or a vapor deposition method using a metal mask, Also, there is a stud bump method in which a metal such as Au is formed by using a wire bonding technique. The flip-chip method, which is one of the methods for mounting this type of semiconductor chip on a substrate,
It is carried out by bonding each bump formed on each pad of the semiconductor chip by the method as described above to the corresponding pad on the substrate or the bump formed on the pad, and by this method, high speed is achieved. Excellent high-density mounting of semiconductor chips has been realized.

In this case, the characteristics relating to the reliability of the semiconductor chip mounted on the substrate by this type of mounting method such as the heat cycle strongly depend on the difference in the coefficient of thermal expansion between the semiconductor chip and the substrate. For example, when a semiconductor chip (Si) is mounted on a glass epoxy substrate having a large difference in thermal expansion coefficient using the flip chip method, the minimum bump height required for the semiconductor chip to absorb the stress caused by the difference in thermal expansion coefficient is It is about 80 (μm), and if the height of the bump is less than this, stress or strain will occur in the semiconductor chip or bump and the glass epoxy substrate due to the above-mentioned stress, so the semiconductor chip and bump may be damaged. .

Therefore, when mounting a semiconductor chip on a substrate by this type of method, the bump height is usually set to 80 mm.
The thickness is set to [μm] or more, which improves the reliability of the semiconductor chip after mounting against heat. Further, as another method for improving the reliability of the semiconductor chip mounted on the substrate against heat, as shown in FIG. 6, the diameters of the bumps 2A and 2B are increased as the distance from the center of the thermal stress of the semiconductor chip 1 is increased to reduce the stress. A method has also been proposed in which the semiconductor chip 1 is made to absorb the stress caused by the difference in the coefficient of thermal expansion by the reduction (Japanese Patent Laid-Open No. 62-51742).

On the other hand, when the semiconductor chip is mounted on the substrate by the flip chip method or the like, in order to prevent the thermal stress of the semiconductor chip from concentrating on the connecting portion with the substrate, a resin is uniformly applied to the gap between the semiconductor chip and the substrate. It is indispensable to form the resin coat layer so as to be encapsulated. Therefore, conventionally, as a method of forming this resin coat layer, an injection needle 7 or the like is provided in a gap 6 between the semiconductor chip 5 mounted on the substrate 3 via the bump 4 and the substrate 3 as shown in FIG. To directly inject the resin 8 (hereinafter referred to as a first resin coat layer forming method), or as shown in FIG.
This hole is called a resin injection hole) 11A, and the resin 8 is transferred through the resin injection hole 11A to the semiconductor chip 5 and the substrate 1.
It is arranged to inject into the gap 6 between the two (hereinafter, referred to as the second resin coat layer forming method).

[0007]

However, the above-mentioned first problem
In the method for forming a resin coat layer, the resin 8 is usually injected by utilizing the surface tension of the resin 8 acting between the surface 3A of the semiconductor chip 5 facing the substrate 3 and the substrate 3.
It takes a long time for the resin 8 to uniformly spread over the entire gap 6 between the substrate 3 and the semiconductor chip 5. Therefore, the work efficiency of the step of filling the resin 8 in the gap 6 between the semiconductor chip 5 and the substrate 3 (hereinafter, this step is referred to as a resin sealing step) is low (the throughput is low), and the result is low. In addition, there is a problem in that this resin encapsulation process requires a lot of cost.

On the other hand, in the second method for forming a resin coat layer, the back pressure applied to the resin 8 from the resin injection hole 11A provided in the substrate 11 is the driving force, and therefore, if this step is attempted in a short time, the semiconductor chip 5 and the gap 6 between the substrate 11
There was a problem of low reliability, such as voids that are likely to cause yield in the interior.

The present invention has been made in consideration of the above points, and a semiconductor device mounted on a substrate and a semiconductor device capable of sealing a resin in a gap between the substrates in a short time and with high reliability, and It is intended to propose a bump forming method.

[0010]

In order to solve such a problem, in the first invention, a surface (4) facing the substrate (41) is provided.
0A), a plurality of bumps (43) formed on the substrate (41) are joined to corresponding joints (44) formed on the substrate (41), and the opposing surface (40A) and the substrate (4).
1) The semiconductor device (4) mounted on the substrate (41) through a second step of encapsulating the resin in the gap (45) between them.
0), the resin is injected into the gap (45) from one end of the gap (45), and the bump (43) is filled with the gap (4).
5) To form a single row or a plurality of rows (L20 to L23) extending in the direction away from the resin injection position along the side of the facing surface (40A) parallel to the injection direction (arrow c) of the resin injected. In addition, the pitch between the bumps (43) forming the row (L20 to L23) is smaller than the pitch between the bumps (43) arranged along the remaining side of the facing surface (40A). It was arranged on the facing surface (40A). In the second invention, a plurality of bumps (6) formed on the surface (60A) facing the substrate (61).
3) is bonded to the corresponding bonding portions (64) formed on the substrate (61), respectively, and the facing surface (60).
A) and the semiconductor device (60) mounted on the substrate (61) through the second step of encapsulating the resin in the gap (65) between the substrate (61) and the resin in the substrate (61).
Through-hole (61A) communicating with the gap (65) formed through
Is injected into the gap (65) through the bump (63),
A row (L40 to L43) is formed so as to form a single row or a plurality of rows (L40 to L43) extending in a direction away from the injection position of the resin along the side of the facing surface (60A) closest to the through hole (61A). So that the pitches between the bumps (63) forming the gaps are narrower than the pitches between the bumps (63) arranged along the remaining sides of the facing surface (60A). I chose Furthermore, in the third invention, a plurality of bumps (33), (43) formed on the surfaces (30A), (40A), (50A) facing the substrates (31), (41), (51). , (53) to the corresponding joints (34), (44) and (54) formed on the substrates (31), (41) and (51), respectively, and the facing surface ( 30A), (40A), (50
Second, in which the resin is sealed in the gaps (35), (45), (55) between (A) and the substrates (31), (41), (51).
Substrate (31), (41), (51)
Semiconductor devices (30), (40), (5) mounted on top
0) in the second step, the gaps (35), (4)
5), a single or a plurality of rows (L10) extending in the direction in which the bumps (33), (43), (53) extend away from the injection position, corresponding to the injection position of the resin injected into the (55).
The bumps (33), (43) and (53) are arranged on the facing surfaces (30A), (40A) and (50A) so as to form L13), (L20 to L23) and (L30 to L33). , Columns (L10 to L13), (L20 to L2)
3), each bump (3) forming (L30 to L33)
The array pitches between 3), (43) and (53) are made narrower as the bumps (33), (43) and (53) are closer to the injection position.

Further, in the fourth invention, the substrate (4
1) a first step of bonding a plurality of bumps (43) formed on the facing surface (40A) to the corresponding bonding portions (44) formed on the substrate (41); Four
0A) and a second step of encapsulating resin in the gap (45) between the substrate (41) and the bump (43) of the semiconductor device (40) mounted on the substrate (41) in sequence. , Resin from the circumferential end of the gap (45) to the gap (4
5), the bumps (43) are injected into the gaps (45) and the opposite surface (4) parallel to the injection direction (arrow c) of the resin injected.
Pitches between the bumps (43) that form one or a plurality of rows (L20 to L23) extending in the direction away from the injection position of the resin along the side of 0A) and that form the rows (L20 to L23). Are arranged on the facing surface (40A) so that the width is smaller than the pitch between the bumps (43) arranged along the remaining side of the facing surface (40A). Further, in the fifth invention, the plurality of bumps (63) formed on the surface (60A) facing the substrate (61) are respectively joined to the corresponding joint portions (64) formed on the substrate (61). The semiconductor device (60) mounted on the substrate (61) through the first step and the second step of encapsulating the resin in the gap (65) between the facing surface (60A) and the substrate (61) sequentially. ), The method of forming the bump (63),
Resin is injected into the gap (65) through the through hole (61A) communicating with the gap (65) provided in the substrate (61), and the bump (63) is closest to the through hole (61A). Between the bumps (63) forming one or more rows (L40 to L43) extending in the direction away from the injection position of the resin along the side of the facing surface (60A) and forming the rows (L40 to L43) Are arranged on the facing surface (60A) so as to be narrower than the pitch between the bumps (63) arranged along the remaining side of the facing surface (60A). Further, in the sixth invention, the substrate (31),
Faces (30A) and (40) facing (41) and (51)
A), a plurality of bumps (3) formed on (50A)
3), (43), and (53) on the substrate (31),
Corresponding joints (3) formed on (41) and (51)
4), (44), and the first step of bonding to (54), and the facing surfaces (30A), (40A), (50A), and the substrate (3).
1), (41), (51) gaps (35), (4)
5) and the semiconductor device (30), (40), (50) mounted on the substrates (31), (41), (51) through the second step of encapsulating the resin in (55) in sequence. Bump of (3
3), (43), and (53), the bump (33) is made to correspond to the injection position of the resin injected into the gaps (35), (45), and (55) in the second step. ,
(43) and (53) are single or plural rows (L10 to L13) and (L20 to L) extending in the direction away from the injection position.
23) and (L30 to L33), bumps (33), (43) and (53) are formed on opposing surfaces (30A),
It is arranged on (40A) and (50A), and at the same time (L1
0-L13), (L20-L23), (L30-L3)
Each bump (33), (43), (53) forming 3)
The array pitches between the bumps are the bumps (33), (43), (5).
3) was so narrowed as it approached the injection position.

[0012]

In the first or fourth aspect of the invention, the resin is injected into the gap (45) from one end of the gap (45) and the bump (43) is injected into the gap (45). A single or a plurality of rows (L20 to L23) extending in the direction away from the resin injection position is formed along the side of the facing surface (40A) parallel to the direction (arrow c), and the row (L
20-L23), so that the pitch between the bumps (43) forming the bumps (43) is narrower than the pitch between the bumps (43) arranged along the remaining side of the facing surface (40A).
By arranging the resin on the 0A), the resin injected into the gap (45) can quickly and uniformly permeate the entire gap (45). In the second or fifth aspect of the invention, the resin is injected into the gap (65) through the through hole (61A) communicating with the gap (65) penetrating the substrate (61), and the bump (63) is formed. ) Through hole (6
1A) along a side of the facing surface (60A) closest to 1A) so as to form one or a plurality of rows (L40 to L43) extending in a direction away from the injection position of the resin, and the row (L40
To L43), the pitch between the bumps (63) is arranged along the remaining side of the facing surface (60A) (6).
3) The facing surface (60
By arranging on top of A), the gap (6
The resin injected into 5) can quickly and uniformly permeate the entire gap (65). Furthermore, the third or sixth
In the present invention, the bumps (33), (43), (5
3) Single or plural rows (L10 to L13), (L20 to L23), (L3) extending in a direction away from the injection position.
0-L33) to form bumps (33), (4
3) and (53) to the facing surfaces (30A), (40A), (5
0A) and arranged in rows (L10 to L13),
The arrangement pitches between the bumps (33), (43), and (53) forming (L20 to L23) and (L30 to L33) are at the injection positions of the bumps (33), (43), and (53). The resin is injected into the gaps (35), (45), (55) so that the resin is injected into the gaps (35), (45), (55) as a whole quickly and evenly. be able to.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings.

(1) First Embodiment In FIGS. 1 (A) and 1 (B), 20 is a semiconductor chip to which the present invention is applied, and the semiconductor chip 20 is provided on the surface 20A facing the glass epoxy substrate 21. Solder bumps 23 for joining the glass epoxy substrate 21 with the glass epoxy substrate 21 are provided so as to form a plurality of rows L1, L2, L3, L4 extending in a direction away from the injection position where the resin is injected in the resin sealing step. . That is, this semiconductor chip 2
At 0, the solder bumps 23 on the facing surface 20A prevent the mutual diffusion of the pad metal into the solder.
A plurality of solder bumps 23 are provided via the Limiting Metal 22. The solder bumps 23 can be mounted on the glass epoxy substrate 21 by bonding them to corresponding pads 24 provided on the glass epoxy substrate 21. .

In this case, the solder bump 23 (and BLM2
2) is the injection direction (arrow a) of the resin injected into the gap 25 between the semiconductor chip 20 and the glass epoxy substrate 21 in the resin sealing step performed after the semiconductor chip 20 is mounted on the glass epoxy substrate 21. ) Parallel rows L1 to L4 are formed on the facing surface 20A such that the pitches of adjacent rows in the same row L1 to L4 are closer than the spacing between the rows L1 to L4. It is arranged. As a result, the semiconductor chip 20 is mounted on the glass epoxy substrate 21.
And the arrangement of the solder bumps 24 interposed between the glass epoxy substrates 21 are formed as described above (that is, a plurality of rows L1 to L4 parallel to the resin injection direction are formed and adjacent in the same row L1 to L4). The pitch between objects is the row L1.
~ L4 is closer to each other).

In the above structure, the resin injected into the gap 25 between the semiconductor chip 20 and the glass epoxy substrate 21 in the resin encapsulation step has its surface tension promoted by the presence of the solder bumps 23, so that the resin is injected. The solder bumps 23 that are adjacent to each other along the rows L1 to L4 of the solder bumps 23 formed in parallel with the direction are sequentially transmitted to quickly penetrate the entire gap 25. Therefore, semiconductor chip 2
By arranging the solder bumps 23 on the surface 20A facing the glass epoxy substrate 21 of No. 0 in this way, the resin sealing step can be performed in a short time.

Further, in this case, the resin sequentially penetrates along the rows L1 to L4 of the solder bumps 23 so as to cover the gaps 25 between the semiconductor chip 20 and the glass epoxy substrate 21 around the solder bumps 23 in order. Therefore, the gap 2
Voids are less likely to occur inside the resin sealed in 5, and thus the yield due to defective resin coating can be reduced.

According to the above construction, a plurality of rows L1 to L4 parallel to the resin injection direction are formed on the surface 20A of the semiconductor chip 20 facing the glass epoxy substrate 21, and within the same row L1 to L4. The solder bumps 23 are formed so that the pitches of the adjacent ones are closer than the spacing between the rows L1 to L4. This is performed after the semiconductor chips 20 are mounted on the glass epoxy substrate 21. In the resin sealing step, the resin injected into the gap 25 between the semiconductor chip 20 and the glass epoxy substrate 21 can be quickly and uniformly penetrated into the entire gap 25 (without generating voids), and thus the substrate A semiconductor chip and a solder capable of encapsulating resin in the gap between the semiconductor chip mounted on the substrate and the substrate in a short time and with high reliability. It is possible to realize a method of forming a bump.

(2) Second Embodiment FIG. 2 shows a semiconductor chip 30 of the second embodiment to which the present invention is applied.
On the surface 30A facing the glass epoxy substrate 31
A plurality of solder bumps 33 are provided via the LM 32. Thus, the semiconductor chip 30 can be mounted on the glass epoxy substrate 31 by bonding the solder bumps 33 to the corresponding pads 34 provided on the glass epoxy substrate 31.

In this case, the solder bump 33 (and BLM3
2) are arranged on the facing surface 30A of the semiconductor chip 30 so as to radially form a plurality of rows L10, L11, L12, and L13 around the center of the semiconductor chip 30. As a result, when the semiconductor chip 30 is mounted on the glass epoxy substrate 31, the semiconductor chip 30 is mounted.
The arrangement of the solder bumps 33 interposed between the glass epoxy substrate 31 and the glass epoxy substrate 31 is as described above (that is, the semiconductor chip 3).
A plurality of rows L10 to L1 are radially arranged with the center of 0 as the center.
3 to form).

A resin injection hole 31A is provided in a portion of the glass epoxy substrate 31 facing the central portion of the semiconductor chip 30, and the resin injection hole 31A is provided in the resin sealing step.
Semiconductor chip 30 and glass epoxy substrate 3 via A
Resin is injected into the gap 35 between the two.

In the above structure, the resin injected into the gap 35 between the semiconductor chip 30 and the glass epoxy substrate 31 through the resin injection hole 31A of the glass epoxy substrate 31 in the resin sealing step is applied to each solder bump 33. Therefore, the surface tension is promoted so that the solder bumps 33 are quickly and evenly penetrated into the entire gap 35 between the semiconductor chip 30 and the glass epoxy substrate 31 while being sequentially transmitted through the solder bumps 33 along the rows L10 to L13 of the solder bumps 33. .

Therefore, by arranging the solder bumps 33 on the surface 30A of the semiconductor chip 30 facing the glass epoxy substrate 31 in this way, the resin sealing step can be performed in a short time. In this case, the resin is semiconductor chip 3
0 and the glass epoxy substrate 31 so as to cover the gap 35 between the solder bumps 33 in sequence and in each row L10 to L13.
Since it gradually infiltrates along with the above, voids are unlikely to occur inside the resin sealed in the gap 35, and accordingly, the yield due to defective resin coating can be reduced.

According to the above structure, a plurality of rows L are formed on the surface 30A of the semiconductor chip 30 facing the glass epoxy substrate 31 in a radial pattern with the center of the semiconductor chip 30 as the center.
The solder bumps 33 are arranged so as to form 10 to L13, and in the resin sealing step, the semiconductor chips 30 are connected to each other via the resin injection hole 31A provided at a position facing the central portion of the semiconductor chip 30 of the glass epoxy substrate 31. By injecting the resin into the gap 35 between the glass epoxy substrate 31 and the glass epoxy substrate 31, the resin injected into the gap 35 can quickly and uniformly permeate the entire gap 35, and thus is mounted on the substrate. It is possible to realize a method for forming a semiconductor chip and a solder bump, which enables a resin to be sealed in a gap between the formed semiconductor chip and the substrate in a short time and with high reliability.

(3) Third Embodiment FIG. 3 shows a semiconductor chip 40 of a third embodiment to which the present invention is applied.
On the surface 40A facing the glass epoxy substrate 41.
A plurality of solder bumps 43 are provided via the LM 42. Thus, the semiconductor chip 40 can be mounted on the glass epoxy substrate 41 by bonding the solder bumps 43 to the corresponding pads 44 provided on the glass epoxy substrate 41.

In this case, the solder bumps 43 are provided at the peripheral surface of the facing surface 40A of the semiconductor chip 40 at the facing surface 40A.
Rows L20, L21, L22, and L23 are formed along each side of A, and the semiconductor chip 40 is attached to the glass epoxy substrate 4.
In the resin encapsulation process performed after mounting on the semiconductor chip 1, the gap 4 between the semiconductor chip 40 and the glass epoxy substrate 41 is formed.
2 parallel to the injection direction (arrow c) of the resin injected into 5
The array pitch between the solder bumps 43 in the rows L21 and L23 is arranged to be narrower than the array pitch between the solder bumps 43 in the other two rows L20 and L22.

As a result, in this semiconductor chip 40, the arrangement of the solder bumps 43 interposed between the semiconductor chip 40 and the glass epoxy substrate 41 when mounted on the glass epoxy substrate 41 is as described above (that is, the semiconductor chip 40). The rows L20 to L23 are formed along each side of the facing surface 40A at the peripheral end of the facing surface 40A, and the array pitch of the solder bumps 43 in the two rows L21 and L23 parallel to the resin injection direction is. The other two rows L20, L22
The solder bumps 43 in the inside are narrower than the arrangement pitch between the solder bumps 43).

In the above structure, the resin injected into the gap 45 between the semiconductor chip 40 and the substrate 41 in the resin encapsulation process has the rows L20 to L20 of the solder bumps 43 formed on the facing surface 40A of the semiconductor chip 40. Of L23,
Row L2 between solder bumps 43 parallel to the resin injection direction
1, along the solder bumps 43 along the solder bumps L23, quickly and uniformly permeate the entire gap 45. Therefore, by arranging the solder bumps 43 on the surface 40A of the semiconductor chip 40 facing the glass epoxy substrate 41 in this way, the resin sealing step can be performed in a short time and with high reliability.

According to the above structure, the rows L20 to L23 are formed on the surface 40A of the semiconductor chip 40 facing the glass epoxy substrate 41 along each side of the surface 40A, and are parallel to the resin injection direction. The arrangement pitch between the solder bumps 43 forming the two rows L21 and L23 is the other two rows L20,
Since the solder bumps 43 are formed so as to be denser than the array pitch between the solder bumps 43 forming the L22, the resin injected into the gap 45 between the semiconductor chip 40 and the glass epoxy substrate 41 is concerned. Gap 45
The semiconductor chips and solder bumps that can be quickly and uniformly penetrated into the whole and thus can seal the resin in the gap between the semiconductor chip mounted on the substrate and the substrate in a short time and with high reliability. The forming method can be realized.

(4) Fourth Embodiment FIG. 4 shows a semiconductor chip 50 of a fourth embodiment to which the present invention is applied.
On the surface 50A facing the glass epoxy substrate 51.
Plural solder bumps 53 are provided via the LM 52. Thus, the semiconductor chip 50 can be mounted on the glass epoxy substrate 51 by bonding the solder bumps 53 to the corresponding pads 54 provided on the glass epoxy substrate 51.

In this case, the solder bump 53 (and BLM5
2) is the injection direction (arrow d) of the resin injected into the gap 55 between the semiconductor chip 50 and the glass epoxy substrate 51 in the resin sealing step performed after the semiconductor chip 50 is mounted on the glass epoxy substrate 51. ) Parallel rows L30, L31, L32, L33 are formed, and the pitches of adjacent ones in the same row L30 to L33 are closer than the spacing between the rows L30 to L33. And the semiconductor chips 5 so that the pitch between the solder bumps 53 (and each BLM 52) in each row L30 to L33 becomes gradually denser as it goes to the side where the resin is filled.
0 facing surfaces 50A.

As a result, in the semiconductor chip 50, the arrangement of the solder bumps 53 interposed between the semiconductor chip 50 and the glass epoxy substrate 51 when mounted on the glass epoxy substrate 51 is as described above (that is, resin injection). A plurality of rows L30 to L33 that are parallel to the direction are formed, and the pitches of adjacent rows in the same row L30 to L33 are closer than the spacing between the rows L30 to L33, and each row L30. ~ Solder bump 53 in L33
The pitch of each other becomes gradually denser as it goes to the side where the resin is encapsulated).

In the above structure, the semiconductor chip 5
When 0 is mounted on the glass epoxy substrate 51, the surface tension of the resin is more strongly promoted where the array pitch between the solder bumps 53 is denser than where the array pitch between the solder bumps 53 is coarse. Therefore, the resin permeates the gap 55 between the semiconductor chip 50 and the glass epoxy substrate 51 faster. Therefore, by arranging the solder bumps on the surface 50A of the semiconductor chip 50 facing the glass epoxy substrate 51 in this manner, the resin can be spread over the entire gap 55 more quickly and uniformly than in the case of the first embodiment. Can be penetrated.

According to the above construction, a plurality of rows L30 to L33 parallel to the resin injection direction are formed on the surface 50A of the semiconductor chip 50 facing the glass epoxy substrate 51, and within the same row L30 to L33. As the arrangement pitch of the adjacent ones becomes closer than the space between the rows L30 to L33, and as the arrangement pitch of the solder bumps 53 in each row L30 to L33 goes to the side where the resin is filled. By arranging the solder bumps 53 so that the solder bumps 53 become gradually denser, the resin can be more quickly and uniformly in the gap 55 between the semiconductor chip 50 and the glass epoxy substrate 51 than in the case of the first embodiment. Can be penetrated into
Thus, it is possible to realize a method for forming a semiconductor chip and a solder bump, which allows a resin to be sealed in a gap between the semiconductor chip mounted on the substrate and the substrate in a short time and with high reliability.

(5) Other Embodiments In the above first to fourth embodiments, the bumps 23,
Although the case where solder is used as the material of 33, 43 and 53 has been described, the present invention is not limited to this, and other materials such as Au, In or V may be applied.

Further, in the above-mentioned first to fourth embodiments,
The case where the substrate on which the semiconductor chips 20, 30, 40, 50 are mounted is the glass epoxy substrates 21, 31, 41, 51 has been described, but the present invention is not limited to this, and an aramid substrate, a CEL substrate, or a BT (bismaleide). The present invention can be applied to the case where the semiconductor chip is mounted on another organic substrate such as triazine) resin and also alumina, AI
The present invention can also be applied to the case where the semiconductor chip is mounted on a ceramic substrate such as N (aluminum nitride), glass ceramic or mullite, or a substrate made of Si Wafer.

Further, in the above-described second embodiment, the gap between the semiconductor chip 30 and the substrate 31 and the substrate 31 of the semiconductor chip 30 in which the resin is sealed through the resin injection hole 31A provided in the substrate 31. The case where the solder bumps 33 are formed on the facing surface 30A as shown in FIG. 2 has been described, but the present invention is not limited to this, and the solder bumps may be formed on the substrate 61 of the semiconductor chip 60 as shown in FIG. 5, for example. It may be formed on the facing surface 60A. That is, FIG.
Then, the solder bumps 62 (and the BLM 63) are provided at the peripheral end portion of the facing surface 60A of the semiconductor chip 60 along the respective sides of the facing surface 60A in the rows L40, L41, L42, L4.
3 is formed, and at this time, each of these rows L40 to L43
Of the rows L4 closest to the resin injection hole 61A of the substrate 61
The arrangement pitch between the solder bumps 62 forming 1 and L43 is formed narrower than the arrangement pitch between the solder bumps 62 forming the other rows L40 and L42.

When the solder bumps 62 are thus formed on the surface 60A of the semiconductor chip 60 facing the substrate 61, when the semiconductor chip 60 is mounted on the substrate 61, the semiconductor chips 60 are injected from the resin injection holes 61A of the substrate 61. The resin sealed in the gap 64 between the board 61 and the board 61 is the closest among the rows L40 to L43 of the solder bumps 62, L41 and L4.
The resin sealing step can be carried out in a short time and with high reliability by promptly and uniformly penetrating into the entire gap 64 through the route 3.

Further, in the above-described fourth embodiment, a plurality of rows L30 to L33 parallel to the resin injection direction are formed on the surface 50A facing the glass epoxy substrate 51, and within the same row L30 to L33. For the semiconductor chip 50 in which the solder bumps 53 are arranged so that the pitches of the adjacent ones are closer than the spacing between the rows L30 to L33, the pitches of the solder bumps 53 in the rows L30 to L33 are the same. The case where the solder bumps 53 are arranged so that the solder bumps 53 become gradually denser as they go to the side where the resin is sealed has been described, but the present invention is not limited to this, and the second and third embodiments are also provided. Also in the same row L10 to L13, L2
Adjacent solder bumps 33, 43 in 0 to L23
The solder bumps 33 and 43 may be arranged so as to become denser as the arrangement pitches between them go toward the resin injection position side.

Furthermore, each solder bump may be arranged in the same manner for a semiconductor chip in which a plurality of solder bumps are arranged in other patterns. By arranging the solder bumps in this way, As a result, the resin can be more quickly sealed (injected) between the semiconductor chip and the substrate.

Further, in the above-described first to fourth embodiments, the facing surfaces 20A, 3 of the semiconductor chips 20, 30, 40, 50 facing the glass epoxy substrates 21, 31, 41, 51.
Solder bumps 23, 33, 4 on 0A, 40A, 50A
Although the case where 3 and 53 are arranged as shown in FIGS. 1 to 4 has been described, the present invention is not limited to this, and the point is that they are injected into the gap between the semiconductor chip and the substrate during the resin sealing step. If the bumps are formed on the facing surface of the semiconductor chip so as to form one or a plurality of rows extending in the direction away from the injection position, corresponding to the injection position of the resin, the arrangement pattern may be other than this. Various arrangement patterns can be applied.

[0042]

As described above, according to the first or fourth aspect of the invention, the plurality of bumps formed on the surface facing the substrate are respectively joined to the corresponding joint portions formed on the substrate.
In the method of forming a semiconductor device mounted on a substrate or a bump of the semiconductor device through a step of sequentially filling the gap between the facing surface and the substrate with a second step, The bumps are injected into the gap from the end portion so that the bumps form one or more rows extending in the direction away from the injection position of the resin along the side of the facing surface parallel to the injection direction of the resin injected into the gap. , And the pitch between the bumps forming the row is narrower than the pitch between the bumps arranged along the remaining side of the facing surface. The injected resin can quickly and uniformly permeate the entire gap, and thus the semiconductor device mounted on the substrate and the semiconductor in which the gap can be reliably filled with the resin in a short time Dress Or it can be realized a method of forming a bump of a semiconductor device. According to the second or fifth aspect of the invention, the first step of bonding the plurality of bumps formed on the surface facing the substrate to the corresponding bonding portions formed on the substrate, and the facing surface and the substrate In a method of forming a semiconductor device mounted on a substrate or a bump of the semiconductor device through a second step of encapsulating a resin in a gap between the resin and the resin, a through hole that allows the resin to communicate with the gap formed in the substrate. The bumps are injected into the gap through the holes, and the bumps are formed so as to form one or a plurality of rows extending in the direction away from the injection position of the resin along the side of the facing surface closest to the through hole. Since the pitch between the bumps is smaller than the pitch between the bumps arranged along the remaining sides of the facing surface, the resin injected into the corresponding gap is filled with the resin injected into the corresponding gap. Quickly and uniformly penetrate the whole It can thus be realized a method of forming a bump of a semiconductor device or a semiconductor device capable of enclosing a short time and reliable resin into the gap between the semiconductor device and the substrate mounted on the substrate. Further, according to the third or sixth invention, the bumps are arranged on the facing surface so as to form one or a plurality of rows in which the bumps extend in a direction away from the implantation position, and an arrangement between the bumps forming the rows. By making the pitch narrower as each bump approaches the injection position,
The resin injected into the gap can more quickly and uniformly permeate into the entire gap, and thus the resin can be sealed in the gap between the semiconductor device mounted on the substrate and the substrate in a short time and with high reliability. It is possible to realize a semiconductor device or a bump forming method for a semiconductor device that can be realized.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a semiconductor chip of a first embodiment to which the present invention is applied and an array pattern of solder bumps formed on a surface of the semiconductor chip facing a substrate.

FIG. 2 is a schematic diagram showing a semiconductor chip of a second embodiment to which the present invention is applied and an array pattern of solder bumps formed on a surface of the semiconductor chip facing a substrate.

FIG. 3 is a schematic diagram showing a semiconductor chip of a third embodiment to which the present invention is applied and an array pattern of solder bumps formed on a surface of the semiconductor chip facing a substrate.

FIG. 4 is a schematic diagram showing a semiconductor chip of a fourth embodiment to which the present invention is applied and an array pattern of solder bumps formed on a surface of the semiconductor chip facing a substrate.

FIG. 5 is a schematic diagram showing a semiconductor chip of another embodiment to which the present invention is applied and an array pattern of solder bumps formed on a surface of the semiconductor chip facing a substrate.

FIG. 6 is a plan view for explaining a conventionally proposed method of forming a solder bump.

FIG. 7 is a schematic side view for explaining a method of encapsulating a resin between a semiconductor chip mounted on a substrate and the substrate by a flip chip method.

FIG. 8 is a schematic side view for explaining a method of encapsulating a resin between a semiconductor chip mounted on a substrate and the substrate by a flip chip method.

[Explanation of symbols]

20, 30, 40, 50, 60 ... Semiconductor chip, 20
A, 30A, 40A, 50A, 60A ... Opposing surface, 2
1, 31, 41, 51, 61 ... Glass epoxy substrate (substrate), 23, 33, 43, 53, 62 ... Solder bumps, 25, 35, 45, 55, 64 ... Gap, 31
A, 61A ... Resin injection hole, L1 to L4, L10 to L1
3, L20 to L23, L30 to L33, L40 to L43
…… Row.

Claims (6)

(57) [Claims] 1. A plurality of vans formed on a surface facing a substrate.
To each corresponding joint formed on the substrate.
The first step of bonding and the gap between the facing surface and the substrate
The second step of encapsulating the resin in the space
In the semiconductor device mounted on theThe resin is injected into the gap from one end of the gap.
Is The bump is a method of injecting the resin to be injected into the gap.
Position of the resin injection along the side of the facing surface parallel to the direction
Form a row or rows extending away from
And the pitch between the bumps forming the row is
Between the bumps arranged along the remaining side of the facing surface
Arranged on the facing surface so that it is narrower than the pitch of
Was A semiconductor device characterized by the above. 2.Multiple vans formed on the surface facing the substrate
To each corresponding joint formed on the substrate.
The first step of bonding and the gap between the facing surface and the substrate
The second step of encapsulating the resin in the space
In the semiconductor device mounted on the The resin communicates with the gap provided in the substrate.
Injected into the gap through the through hole, The bump is located on the side of the facing surface closest to the through hole
Along with the resin that extends in the direction away from the resin injection position.
To form a number or a plurality of rows and to form said rows
The pitch between the bumps along the remaining side of the facing surface
To be narrower than the pitch between the above bumps
Arranged on the facing surface Semiconductor characterized by
apparatus. 3.Multiple vans formed on the surface facing the substrate
To each corresponding joint formed on the substrate.
The first step of bonding and the gap between the facing surface and the substrate
The second step of encapsulating the resin in the space
For semiconductor devices mounted on top Be careful Of the resin injected into the gap during the second step
Corresponding to the injection position, the bumps from the injection position
To form a row or rows that extend in a direction away from one another
The bumps on the opposite surface, and
The array pitch between the bumps that form the
So that it becomes narrower toward the injection position above
A semiconductor device characterized by the above. 4.Multiple vans formed on the surface facing the substrate
To each corresponding joint formed on the substrate.
The first step of bonding and the gap between the facing surface and the substrate
The second step of encapsulating the resin in the space
In the method of forming the bumps of the semiconductor device mounted on the above
And The resin is injected into the gap from one end of the gap.
Is The bump is a method of injecting the resin to be injected into the gap.
Position of the resin injection along the side of the facing surface parallel to the direction
Form a row or rows extending away from
And the pitch between the bumps forming the row is
Between the bumps arranged along the remaining side of the facing surface
Arranged on the facing surface so that it is narrower than the pitch of
Was A method of forming a bump, which is characterized by the above. 5.Multiple vans formed on the surface facing the substrate
To each corresponding joint formed on the substrate.
The first step of bonding and the gap between the facing surface and the substrate
The second step of encapsulating the resin in the space
In the method of forming the bumps of the semiconductor device mounted on the above
And The resin communicates with the gap provided in the substrate.
Injected into the gap through the through hole, The bump is located on the side of the facing surface closest to the through hole
Along with the resin that extends in the direction away from the resin injection position.
To form a number or a plurality of rows and to form said rows
The pitch between the bumps along the remaining side of the facing surface
Arranged on It should be narrower than the pitch between bumps.
Arranged on the facing surface Bump characterized by
Forming method. 6.Multiple vans formed on the surface facing the substrate
To each corresponding joint formed on the substrate.
The first step of bonding and the gap between the facing surface and the substrate
The second step of encapsulating the resin in the space
In the method of forming the bumps of the semiconductor device mounted on the above
And Of the resin injected into the gap during the second step
Corresponding to the injection position, the bumps from the injection position
To form a row or rows that extend in a direction away from one another
The bumps on the opposite surface, and
The array pitch between the bumps that form the
So that it becomes narrower toward the injection position above
A method of forming a bump, which is characterized by the above.