JP3394130B2 - Method for manufacturing organic electroluminescence element and apparatus for manufacturing organic electroluminescence element - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an organic electroluminescence element and an apparatus for manufacturing an organic electroluminescence element.

[0002]

BACKGROUND ART In recent years, attention has been paid to an organic electroluminescence element (organic EL element) which is a light emitting device including an organic material layer, and research has been advanced toward its use for a display or the like. The thin films such as the electrodes and the light emitting layer forming the organic EL element are formed by the vacuum deposition method, the sputtering method, or the like.
It is laminated on the substrate in a vacuum chamber.

Usually, the substrate used for the organic EL device is
After dirt on the surface thereof is removed by washing with water or alcohol in the atmosphere, it is carried into a vacuum chamber, and an organic material layer, a cathode and the like are laminated on the surface. However, since the cleaning of the substrate is performed in the atmosphere, there is a problem that organic substances, dusts, and the like in the atmosphere adhere to the substrate or an anode formed on the surface of the substrate to recontaminate the substrate. In this way, when film formation is performed with the substrate and the anode on the substrate being contaminated,
The adhesion of the film to the substrate and the adhesion between the thin films are deteriorated, which causes a decrease in luminous efficiency and an increase in voltage, and also shortens the light emission life.

As a solution to this problem, Japanese Patent Laid-Open No. 4-32560 discloses a structure in which a substrate is cleaned with ozone in a vacuum chamber and then a film is formed. Further, Japanese Patent Laid-Open No. 7-142168 proposes a structure in which an anode on a substrate is subjected to plasma surface treatment in a vacuum chamber and then an organic material layer is formed on the anode.

[0005]

However, when the substrate is washed with ozone or plasma in the vacuum chamber for forming a film of the organic substance, the organic substance evaporated on the wall surface of the vacuum chamber is decomposed. There is a problem that the substrate is redeposited by adhering to the substrate or by being sputtered with an organic substance of a vapor deposition source and adhering to the substrate. Furthermore, in the above-mentioned plasma surface treatment, excited active species such as ions and electrons in the plasma have no direction and undergo thermal motion in all directions, so that not only the substrate but also the substrate holder around it is processed. This causes a problem that the impurities generated due to the impurities adhere to the substrate and the anode on the substrate and are re-contaminated.

An object of the present invention is to provide a method for manufacturing an organic electroluminescence element and an apparatus for manufacturing an organic electroluminescence element capable of cleaning and forming a film on a substrate without recontaminating the surface of the substrate. .

[0007]

A method of manufacturing an organic electroluminescence device according to the present invention comprises a cleaning tank provided separately from a vacuum tank for forming a thin film on a substrate, and ultraviolet rays having directivity toward the substrate, or After cleaning the substrate with an ion beam having directivity toward the substrate, the substrate is transferred to a vacuum chamber, and a thin film including an organic layer is formed on the substrate in the vacuum chamber. Here, the substrate also includes a substrate having a thin film already formed on its surface.

In the present invention, since the substrate is cleaned in a cleaning tank different from the vacuum tank, the substrate is cleaned in a space isolated from the vacuum tank where many organic substances and impurities are present on the wall surface and the evaporation source. As a result, it is possible to prevent the substrate from being re-contaminated by the organic substances in the vacuum chamber adhering to the substrate.

Further, even if a slight amount of impurities or organic substances are attached to the wall surface of the cleaning tank, ultraviolet rays having directivity toward the substrate or ion beams having directivity toward the substrate are used for cleaning the substrate. By irradiating only the substrate with these, it becomes possible to ash and remove only the substance attached to the surface of the substrate. Therefore, unlike the conventional plasma treatment, impurities and decomposed substances of organic substances generated by the treatment of parts other than the substrate are prevented from adhering to the substrate, and impurities existing on the wall surface of the cleaning tank are sputtered. Therefore, the substrate is not deposited on the substrate and can be cleaned without recontamination, and the surface of the substrate can be surely cleaned. Thereby, the above-mentioned object is achieved.

When ultraviolet rays are used, the wavelength range is preferably 350 nm or less and 150 nm or more, and particularly preferably 300 nm or less and 150 nm or more. If the size exceeds 350 nm, the ashing treatment of the organic matter, which is a contaminant of the substrate, cannot be effectively performed. Also, its irradiance is 1
It is preferably from 200 to 200 mW / cm ^2, and particularly preferably from 10 to 50 mW / cm ² . Within this range, the carbides present on the surface can be incinerated in a short time. The irradiation time of ultraviolet rays is preferably 1 minute to 1 hour.

When an ion beam is used, the irradiation dose is preferably 100 μA / cm ² to 100 mA / cm ^2, and particularly preferably 500 μA / cm ^{2 to} 10 mA / cm ² . And the kinetic energy is preferably 1 eV to 10 keV, and more preferably 100 eV to several keV. If the irradiation amount and energy range are within this range, the organic matter can be incinerated without damaging the oxide electrode or the like on the substrate.

Further, it is preferable that the cleaning tank has a space free from water, organic matter and dust. If organic vapor is present in the cleaning tank, a polymer film may be formed on the surface of the substrate, especially when an ion beam is used.

The pressure in the cleaning tank is preferably 10 ^-1 Pa or less. By doing so, when an ion beam is used for cleaning the substrate, the collision of the ions with the gas molecules can be reduced and the mean free path of the ions can be lengthened, so that the ions are not slowed down from the ion source. Therefore, the substrate can be efficiently and reliably cleaned. Here, the pressure in the cleaning tank is preferably 10 ⁻³ Pa or less in order to efficiently clean the substrate using the ion beam, and is 10 ⁻⁴ Pa or less when ultraviolet rays are used. Is preferred.

Between the cleaning tank and the vacuum tank, there is provided a transfer path that connects the cleaning tank and the vacuum tank, and an openable / closable shutter that blocks the transfer path. After cleaning the substrate, open the shutter,
It is desirable to transfer the substrate from the cleaning tank to the vacuum tank through the transfer path. Here, it is preferable that the shutter is capable of completely blocking the cleaning tank and the vacuum tank and ensuring the airtightness of each.

Thus, if the substrate is transported through the transfer path, the substrate can be transferred from the cleaning tank to the vacuum tank without being exposed to the atmosphere, so that the substrate cleaned in the cleaning tank is contaminated with organic substances in the atmosphere. The substrate can be transferred into the vacuum chamber while keeping its surface clean. Also,
Since the shutter of the transfer path is closed when the substrate is cleaned, it is possible to reliably prevent organic substances and impurities in the vacuum tank from entering the cleaning tank and contaminating the substrate during cleaning.

Further, it is desirable to open the shutter while the pressure inside the cleaning tank is lower than the pressure inside the vacuum tank. Here, the evacuation of the cleaning tank can be performed before, after, or during cleaning of the substrate.

By doing so, when the shutter is opened, impurities and the like in the cleaning tank do not flow into the vacuum tank together with the gas molecules, and it is possible to prevent contamination in the vacuum tank. Further, even if the shutter is opened, the pressure in the vacuum chamber does not drop, so that it is possible to omit the trouble of exhausting the vacuum chamber each time the shutter is opened.

It is desirable that the cleaning of the substrate with ultraviolet rays be performed in the presence of oxygen. By doing so, it becomes possible to promote the generation of ozone from oxygen and the generation of active oxygen from this ozone, and the organic substances on the substrate can be decomposed and removed by the oxidizing action of active oxygen, so that the cleaning of the substrate is further facilitated. It can be done efficiently.

Further, it is desirable to use an oxygen ion beam as the ion beam used for cleaning the substrate. According to this, it becomes possible to ash organic matter efficiently and reliably, and particularly when an oxide is used as the material of the substrate,
Since the oxide is not reduced by the irradiation of the ion beam, damage due to modification of the substrate can be avoided.

On the other hand, the apparatus for manufacturing an organic electroluminescence element of the present invention comprises a vacuum tank for forming a thin film on a substrate, a cleaning tank provided separately from the vacuum tank, and the cleaning tank and the vacuum tank connected to each other. And a shutter that can be opened and closed to block the transfer path, and the cleaning tank has an ultraviolet ray generation source that generates ultraviolet rays having directivity toward the substrate or an ion beam having directivity toward the substrate. Is provided with an ion beam generation source.

In the apparatus of the present invention, since the vacuum tank for film formation and the cleaning tank for cleaning the substrate are separately provided,
The substrate can be washed in a space separated from the vacuum chamber, and it is possible to prevent the substrate from being re-contaminated by the organic substances in the vacuum chamber adhering to the substrate. Also, since the transfer path that connects the cleaning tank and the vacuum tank is provided, the substrate can be transferred through this transfer path without exposing to the atmosphere, and the cleaned substrate can be transferred from the cleaning tank to the vacuum tank in a clean state. The film can be transferred to and deposited. Further, since the transfer path is provided with a shutter, if the shutter is closed during cleaning of the substrate, it is possible to reliably prevent impurities in the vacuum tank from entering the cleaning tank and contaminating the substrate.

Further, the cleaning tank is provided with an ultraviolet ray generation source or an ion beam generation source, and since both the ultraviolet rays and the ion beam obtained from these have directivity toward the substrate, they are attached to the surface of the substrate. It becomes possible to ash only and remove it, impurities such as impurities generated by processing parts other than the substrate, decomposed products of organic substances, etc. adhere to the substrate,
Impurities existing on the wall surface of the cleaning tank are not sputtered and deposited on the substrate, and the substrate can be reliably cleaned without recontamination. Thereby, the above-mentioned object is achieved.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows an organic electroluminescence element (organic EL element) manufacturing apparatus 10. The organic EL element manufacturing apparatus 10 includes a vacuum tank 20 for forming a desired thin film on a substrate 11, a cleaning tank 30 provided separately from the vacuum tank 20, and the cleaning tank 30 and the vacuum tank 2.
And a transfer path 40 communicating with 0.
The substrate 11 is made of glass such as quartz glass,
It may be formed of ceramics or the like, and the material thereof may be appropriately selected for implementation.

The vacuum chamber 20 has a substrate holder 21 for supporting the substrate 11 on the upper portion thereof, and the substrate holder 21 is a frame-shaped member for supporting the peripheral portion of the substrate 11, and the vacuum chamber 2
It is supported by a support portion 211 extending from the upper surface of 0. A vapor deposition source 22 is provided below the vacuum chamber 20 so as to face the substrate holder 21. Evaporation source 22
Is equipped with a boat 221 made of a refractory metal such as tungsten or molybdenum, and an evaporation material 23 such as an organic substance or a metal placed on the boat 221 is energized to heat and vaporize the boat 221. There is.

A substrate holder 31 having substantially the same shape as the substrate holder 21 of the vacuum chamber 20 supported by the support portion 311 is installed on the upper portion of the cleaning tank 30, and the lower portion thereof faces the substrate holder 31. An ultraviolet ray generation source 32 is provided. The ultraviolet ray generation source 32 is set to generate ultraviolet rays in a wavelength range of 350 nm or less and 150 nm or more. The ultraviolet ray generation source 32 is, for example, a mercury lamp or a heavy water system lamp,
Alternatively, a laser generation source or the like that generates excimer laser light such as ArF, KrF, XeF, or XeCl can be used.

Further, the ultraviolet rays are given a directivity toward the substrate 11 so that only the substrate 11 is irradiated. When the mercury lamp or the heavy water system lamp is used as the ultraviolet ray generation source 32, this directivity is obtained by installing a reflecting material so as to cover the substrate 11 and the lamp, or by condensing with a lens. .

When excimer laser light is used, the irradiance is such that the substrate 11 is not greatly damaged by laser ablation and its surface is lightly ablated. That is, its irradiance is 1-2
20mW / cm ² is suitable, and 220mW / cm ^{2 and} above, substrate 1
1 or the transparent electrode (anode) formed on the substrate 11 may be damaged. If it is 1 mW / cm ² or less, the effect of UV irradiation is small and the irradiation time becomes long.

The transfer path 40 is provided between the vacuum tank 20 and the cleaning tank 30, and is provided with an upper and lower slide type shutter 41, which is an opening / closing means of the transfer path 40, in the middle thereof. The shutter 41 can be slid by a driving unit (not shown), and the shutter 41 is moved to block or open the transfer path 40. In the state where the shutter 41 is closed, the shutter 41 and the wall surface of the transfer path 40 are brought into close contact with each other by a vacuum seal such as a Viton seal, so that the space inside the vacuum tank 20 and the space inside the cleaning tank 30 are separated from each other. It is designed to be completely shut off.

The organic EL element manufacturing apparatus 10 has a substrate transfer mechanism (not shown) that transfers the substrate 11 from the substrate holder 31 in the cleaning tank 30 to the substrate holder 21 in the vacuum tank 20. As the substrate transfer mechanism, for example, various existing transfer mechanisms such as a mechanism for placing the substrate 11 on a belt for transfer and a mechanism for supporting and moving the substrate 11 by an arm can be used.

In this embodiment having such a configuration, the organic EL element is manufactured by the following procedure. First, the shutter 41 is closed in advance, the vapor deposition material 23 that constitutes an organic EL element such as an organic substance or a metal is placed on the boat 211 of the vacuum tank 20, and the substrate holder 31 of the cleaning tank 30 is placed.
The substrate 11 is fixed to. Then, the vacuum tank 20 and the cleaning tank 30 are evacuated to completely remove impurities such as organic matter, moisture, and dust. After this, the cleaning tank 30 is filled with 10 ⁻⁴ Pa or more.
Oxygen is supplied so that the pressure is about 10 ^-1 Pa.

Next, the substrate 11 is irradiated with a predetermined amount of ultraviolet rays from the ultraviolet source 32 within a range of 1 minute to 1 hour,
The substrate 11 is washed. At this time, the pressure in the cleaning tank 30 is maintained below a certain level, and exhaust is performed to keep the atmosphere clean. During the irradiation of ultraviolet rays, impurities such as organic substances attached to the surface of the substrate 11 are removed by being ashed by ultraviolet rays or oxidized and decomposed into active oxygen of ozone generated from oxygen. After the ultraviolet irradiation is completed, the cleaning tank 30 is evacuated to increase the degree of vacuum higher than that of the vacuum tank 20 (lower the pressure than that of the vacuum tank 20), and then the shutter 41.
Open up. At this time, since the cleaning tank 30 is depressurized more than the vacuum tank 20, the impurities in the cleaning tank 30 are not contained in the vacuum tank 2.
It never flows into zero.

Then, by a substrate transfer mechanism (not shown)
The substrate 11 is transferred from the cleaning tank 30 through the transfer path 40 to the vacuum tank 2
0 to fix it to the substrate holder 21, and to re-insert the shutter 4
Block 1 Then, the boat 211 of the vapor deposition source 21 is energized to heat the vapor deposition material 23 and deposit it on the substrate 11 to manufacture an organic EL element.

According to this embodiment, the following effects can be obtained. That is, in the vacuum chamber 20, many organic substances and impurities due to vapor deposition before this process exist on the wall surface and the vapor deposition source 21. However, in the present embodiment, the cleaning of the substrate 11 is different from that of the vacuum chamber 20. Since the cleaning is performed in the cleaning tank 30, the organic substances and impurities in the vacuum tank 20 do not enter the cleaning tank 30, and the substrate 11 is not contaminated by the organic substances and the like.

Further, an ultraviolet ray generation source is provided in the cleaning tank 30 so that the substrate 11 is irradiated with ultraviolet rays having directivity toward the substrate 11.
Since only the particles are irradiated and cleaned, even if a small amount of impurities or organic substances are attached to the wall surface of the cleaning tank 30, only those attached to the surface of the substrate 11 can be ashed and removed. Therefore, unlike the conventional plasma treatment, parts other than the substrate 11 are not treated and impurities are generated, organic substances are decomposed, and the like, so that they are not attached to the substrate 11. The existing impurities are not deposited on the substrate 11 by being sputtered or the like, and the surface of the substrate 11 can be cleaned without recontaminating the substrate 11.

Further, since the irradiation of ultraviolet rays is carried out in the presence of oxygen, the generation of ozone and active oxygen can be promoted and the impurities on the surface of the substrate 11 can be decomposed and removed by the oxidizing action of the active oxygen. Therefore, in addition to the cleaning effect by the ashing treatment by ultraviolet irradiation, the cleaning effect by the treatment with ozone can be obtained, and the substrate 11 can be efficiently and reliably cleaned.

Since the substrate 11 is transported through the transfer path 40, the cleaning tank 30 is not exposed to the atmosphere.
To the vacuum tank 20, the substrate 11 cleaned in the cleaning tank 30 is not contaminated by organic substances in the atmosphere, and the substrate 11 can be transferred into the vacuum tank 20 while keeping its surface clean. Further, since the substrate 11 is cleaned while the shutter 41 of the transfer path 40 is closed, it is possible to prevent the organic substances and impurities in the vacuum tank 20 from entering the cleaning tank 30 during the cleaning to contaminate the substrate 11. It can be avoided.

Further, since the shutter 41 completely shuts off the cleaning tank 30 and the vacuum tank 20, it is possible to ensure the airtightness of each and to surely prevent impurities from entering at the molecular level. Furthermore, since the shutter 41 is opened in a state where the pressure inside the cleaning tank 30 is lower than the pressure inside the vacuum tank 20, even if the shutter 41 is opened, impurities and the like in the cleaning tank 30 will remain together with gas molecules in the vacuum tank 20. Since it does not flow into the inside, the vacuum chamber 20 can be prevented from being contaminated. Also, the shutter 4
Since the pressure in the vacuum chamber 20 does not decrease even if the pressure chamber 1 is opened, the labor of exhausting the vacuum chamber 20 every time the shutter 41 is opened can be omitted.

The present invention is not limited to the above-described embodiment, but includes other configurations and the like that can achieve the object of the present invention, and the following modifications and the like are also included in the present invention.
That is, in the above-described embodiment, ultraviolet rays are used for cleaning the substrate 11, but ion beams may be used. For example, the cleaning tank 30 may be provided with an ion gun or the like that extracts ions from the ion source to form a beam instead of the ultraviolet ray generation source 32, and the substrate 11 may be cleaned by irradiating the ion beam from the ion gun. At this time, the ion beam is applied to the cleaning tank 30.
It is indispensable to give directivity so as not to irradiate a portion other than the substrate 11 such as the wall surface of the substrate and the substrate holder 31. Use an existing ion gun that can arbitrarily set an irradiated portion by focusing ions with a lens. Good.

As the type of ion beam, for example, an oxygen ion beam can be used, and according to this, the substrate 11 is used.
The organic matter attached to the can be ashed efficiently and reliably.
When an oxide is used as the material of the substrate 11, the oxide is not reduced by the irradiation of the ion beam, so that the substrate 11 can be prevented from being denatured and damaged.

As the ion beam, ions of an inert gas such as Ar and He, or a beam of active radicals or ions such as CCl ₄ and CHCl ₃ may be used.
These beams may be appropriately combined and used together. Alternatively, a gas obtained by ionizing and radicalizing the mixed gas may be used. However, when using an oxide for the substrate 11, an ionic species that is not reduced should be selected. Note that the oxide is often reduced by strong irradiation of ions, but the oxygen ion beam is preferable because it does not occur.

Further, in the case of using an ion beam, if irradiation is performed with the pressure in the cleaning tank 30 being 10 ⁻³ Pa or less, collision of the ions with gas molecules in the cleaning tank 30 is reduced and the mean free path of the ions is reduced. Can be made longer, and the ions can be made to collide with the substrate 11 without slowing down the velocity from the ion source, so that the substrate 11 can be cleaned efficiently and reliably.

On the other hand, in the above-described embodiment, the pressure of oxygen in the cleaning tank 30 was 10 ⁻⁴ Pa to 10 ⁻¹ Pa and the ultraviolet rays were irradiated, but if the water, organic matter, dust, etc. in the cleaning tank 30 are removed, The pressure may be about atmospheric pressure. Further, in the above-described embodiment, the exhaust is performed during the irradiation of the ultraviolet rays, but the exhaust may not be performed. However, it is preferable to exhaust the impurities removed from the substrate 11 to the outside of the cleaning tank 30.

In the above embodiment, the transfer path 40 is provided between the vacuum tank 20 and the cleaning tank 30, but the transfer path 40 may be omitted, and the substrate 11 after cleaning is cleaned by the cleaning tank 3
It may be taken out from 0 and transferred to the vacuum chamber 20. However, since the substrate 11 is exposed to the atmosphere after cleaning,
It is preferable to provide the transfer passage 40 in order to prevent contamination by organic substances in the atmosphere.

Further, the transfer path 40 was provided with a slide type shutter 41 as an opening / closing means, but in the state where the transfer path 40 connects the vacuum tank 20 and the cleaning tank 30 without providing the shutter 41. Even if cleaning and film formation are performed, it is possible to prevent impurities from being mixed to some extent. However, in order to avoid contamination of the substrate 11 due to impurities in the vacuum tank 20 entering the cleaning tank 30 during cleaning and impurities in the cleaning tank 30 entering the vacuum tank 20 during film formation, It is preferable to provide an opening / closing means.

As the opening / closing means, for example, an existing valve or the like may be provided to open / close the transfer path 40, and various opening / closing means can be used as long as they can reliably close the transfer path 40. . Further, opening / closing means is provided on each of the vacuum tank 20 side and the cleaning tank 30 side of the transfer path 40, the opening / closing means on the cleaning tank 30 side is opened to transfer the substrate 11 into the transfer path 40, and then the cleaning tank again. Even if the opening / closing means on the side of 30 is closed and the inside of the transfer path 40 is evacuated in the state where the substrate 11 exists, the opening / closing means on the side of the vacuum chamber 20 is opened to transfer the substrate 11 into the vacuum chamber 20. Good.

Further, in the above embodiment, the substrate 1 for ultraviolet rays is used.
After irradiating No. 1, the cleaning tank 30 was evacuated so as to have a lower pressure than the vacuum tank 20, but this evacuation may not be performed. However, if this exhaust is not performed, impurities in the cleaning tank 30 may flow into the vacuum tank 20. When this evacuation is performed, the cleaning tank 30 may be depressurized to a pressure lower than that of the vacuum tank 20 and then irradiated with ultraviolet rays. According to this, even if the shutter 41 is opened as it is after the irradiation, the above-described inflow of impurities is performed. Can be prevented.

In the above embodiment, the boat 2 of the vapor deposition source 22 is used.
Although the number 21 is one, a plurality of layers 21 may be provided. According to this, the organic material layer such as the light emitting layer and the electrode such as metal can be sequentially laminated without breaking the vacuum in the vacuum chamber. In addition, the container for depositing the vapor deposition material 23 is not limited to the boat 221, and a commonly used crucible, a linear heater, or the like may be used, and the type of vapor deposition source may be appropriately selected for implementation. Then, in the above-described embodiment, the substrate 11 before film formation is washed, but after forming the anode or the like by the transparent electrode or the like,
You may wash in the washing tank 30.

[0048]

As described above, according to the present invention,
Since the substrate is cleaned in a cleaning tank different from the vacuum tank, the substrate is cleaned in a space isolated from the vacuum tank, and organic substances and impurities in the vacuum tank adhere to the substrate and contaminate it. Can be prevented. Further, since the substrate is cleaned by using an ion beam having a directivity toward the substrate or an ultraviolet ray having a directivity toward the substrate, if only these are irradiated on the substrate, only those adhering to the surface of the substrate will be removed. It can be ashed or decomposed and removed. Therefore, unlike the conventional plasma treatment, impurities and decomposed substances of organic substances generated by the treatment of parts other than the substrate are prevented from adhering to the substrate, and impurities existing on the wall surface of the cleaning tank are sputtered. It is prevented from being deposited on the substrate due to the fact that the substrate is deposited, and the substrate can be reliably cleaned without recontamination. As a result, the adhesiveness of the film to the substrate and the adhesion between the thin films can be enhanced, and an organic EL element having high luminous efficiency and long life can be obtained.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of the present invention.

[Explanation of symbols]

11 board 20 vacuum chamber 30 washing tank 40 transfer routes 41 shutter 32 UV source

─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-7-220873 (JP, A) JP-A-7-207427 (JP, A) JP-A-6-248440 (JP, A) JP-A-3- 115569 (JP, A) JP-A-6-157190 (JP, A) JP-A-59-74279 (JP, A) Actually opened 62-51171 (JP, U) Actually opened 6-10361 (JP, U) (58) Fields surveyed (Int.Cl. ⁷ , DB name) H05B 33/10 H05B 33/14 C23C 14/00-14/58

Claims (4)

(57) [Claims] 1. A cleaning tank provided separately from a vacuum tank for forming a thin film on a substrate, and a transfer path connecting the cleaning tank and the vacuum tank between the cleaning tank and the vacuum tank. And a shutter that can be opened and closed to block the transfer path, and the shutter is closed to clean the substrate with ultraviolet rays having directivity toward the substrate or ion beams having directivity toward the substrate. Then, with the pressure inside the cleaning tank lower than the pressure inside the vacuum tank, the shutter is opened and the substrate is transferred from the cleaning tank to the vacuum tank through the transfer path. 2. A method for manufacturing an organic electroluminescence device, which comprises forming a thin film including an organic material layer on the substrate. 2. A cleaning tank provided separately from a vacuum tank for forming a thin film on a substrate, after cleaning the substrate in the presence of oxygen with ultraviolet rays having directivity toward the substrate, the substrate is then cleaned. A method for manufacturing an organic electroluminescence device, which comprises transferring to a vacuum tank and forming a thin film containing an organic material layer on the substrate in the vacuum tank. 3. A cleaning tank provided separately from a vacuum tank for forming a thin film on a substrate, after cleaning the substrate with an oxygen ion beam having directivity toward the substrate, and then transferring the substrate to the vacuum tank. A method of manufacturing an organic electroluminescence device, which comprises transferring and forming a thin film including an organic material layer on the substrate in the vacuum chamber. 4. A vacuum tank for forming a thin film on a substrate, a cleaning tank provided separately from the vacuum tank, a transfer path connecting the cleaning tank and the vacuum tank, and the transfer path is cut off. and a openable shutter, the the cleaning tank, the ultraviolet generating source for generating ultraviolet rays having directivity toward the substrate, or an oxygen ion beam generator for generating the oxygen ion beam having directivity toward the substrate An apparatus for manufacturing an organic electroluminescence device, characterized in that a source is provided.