JP3398352B2 - Cluster ion beam generator - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cluster ion beam generator used for implanting impurity (dopant) ions into a semiconductor wafer, and more particularly to a nonmetal such as boron (boron). The present invention relates to a cluster ion beam generator that efficiently generates a cluster of a substance or a metal carbide such as TiC.

[0002]

2. Description of the Related Art In the field of semiconductor manufacturing technology, it is desired to make the semiconductor wafer thinner and the semiconductor device more compact by making the implantation depth of impurity ions into the semiconductor wafer as shallow as possible. At present, for example, in the implantation of boron ions, the implantation depth is 40 nm, which is a technical limit, but an ion implantation technique that solves this is not yet developed.

In the ion implantation, in order to implant the ions into the semiconductor wafer one by one, a large amount of energy must be applied to each one of the ions, and as a result, the ions are implanted deep into the semiconductor wafer. If a small energy is applied to one ion in order to shallowly implant the surface of the semiconductor wafer, implantation into the semiconductor wafer becomes impossible.

Therefore, the present inventors can implant ions by clustering them with energy that can be implanted as the whole cluster, and implanting them in a shallow state with a smaller energy per boron ion. We have been engaged in R & D on cluster ion implantation technology.

A conventionally known cluster ion beam generator 36 is shown in FIG. The conventional cluster ion beam generator 36 is provided with a magnetron discharge part for performing sputtering with plasma. In this magnetron discharge part, a target 38 (for example, a boron target) is provided in front of annular and columnar permanent magnets 37 coaxially arranged with each other, and an anode 39 is provided on the side thereof so that the target 38 is along the surface of the target 38. Argon gas, for example, is introduced as a sputtering gas from the inlet 40.

The operation of this conventional structure is as follows. An RF power source is applied between the target 38 and the anode 39 to discharge the argon gas to partially turn the argon gas into plasma, and the boron ions are sputtered and injected by the plasma ions. The desired ions are generated, and these are cooled in the growth tank 41 to form clusters, which are then implanted into the semiconductor wafer through the openings of the growth tank 41 and implanted.

An implantation method using a gas cluster ion beam is known (see Japanese Patent Laid-Open No. 9-41138). Also, a method of sputtering with a magnetron is known (see Japanese Patent Laid-Open No. 10-324969).

[0008]

The conventional cluster ion beam generator 36 has the following problems. (1) The conventional magnetron discharge part uses an RF power source (mainly 13.5 mm) when sputtering a non-metal substance such as boron.
6 MHz) is used, but an impedance mismatch occurs with the output impedance of the power source (usually 50Ω) in the magnetron discharge part. As a result, the power supplied from the power source is reflected, and the reflected power is intentionally
-It was adopted in an inefficient way of consuming the C circuit. Therefore, an object of the present invention is to eliminate this impedance mismatch.

(2) The conventional magnetron discharge is shown in FIG.
As shown in (b), argon gas is introduced through the inlet 40, plasma 42 is generated, and Ar in the plasma is generated.
A boron target is sputtered by the ions, and neutral boron B or B ⁺ is generated by this sputter. These neutral boron B and B ⁺ move forward in the growth tank. However, in the conventional magnetron discharge, the introduction port 4 is arranged so that the argon gas flows in a direction substantially parallel to the surface of the target 38.
0 was provided, so the target 3 from the inlet 40
Neutral boron B or B near the target 38 generated by sputtering by argon gas flowing in parallel to
⁺ Is blown away to the side. As a result, neutral boron B or B ⁺ is prevented from directly moving forward in the growth tank, and there is a problem that B (boron) cannot be effectively used. Therefore, an object of the present invention is to improve the inflow direction of the argon gas and solve the problem of obstruction of forward movement of B (boron) by plasma in the growth tank.

(3) In the conventional cluster ion beam generator 36, the tip wall 43 of the growth tank 41 is used, as shown in FIG.
As shown in (a), backscattering of cluster ions (a phenomenon of being pushed back) occurred, and the cluster ions could not be effectively used. Further, the flow of cluster ions in the growth tank 41 is a so-called laminar flow in which the velocity of the central portion is large and the peripheral portion is small. For this reason, the peripheral part where the flow velocity is slower than the central part
Since the residence time in 1 is longer and is further cooled, the aggregation and clustering of ions are further promoted.
As a result, there is a problem that the size of the cluster (indicated by n in B _n ) is different between the central part and the central part, and the size of the cluster becomes nonuniform. Therefore, an object of the present invention is to solve such problems of backscattering of clusters and nonuniformity of cluster size in the growth tank 41.

(4) In the cluster injection into the semiconductor wafer, if the cluster size is too large, the semiconductor performance is adversely affected. Therefore, it is desired that the cluster size is as small as 50 or less, preferably about 5 to 7. However, conventionally, it was difficult to control the size of clusters and generate 50 or less cluster ions. Therefore, the object of the present invention is to control the size of clusters formed in the growth tank,
It is to be able to realize a small cluster size.

(5) The above is the main problem of the present invention, but while solving the above problems, a complicated device is not obtained,
It is a further object of the present invention to realize a cluster ion beam generator which has a very simple structure as a whole and can be manufactured at a low price and is easy to handle.

[0013]

In order to solve the above-mentioned problems, the present invention discharges a sputtering gas to generate a plasma, and sputters a target of a non-metal substance or a metal carbide with the ions of the plasma. A cluster ion beam generator having a magnetron discharge part for generating an ion source to be injected and a cylindrical growth tank for growing a cluster ion beam from the ion source to be injected, wherein the magnetron discharge parts are opposite to each other. A permanent magnet coaxially arranged with polarity, an inner supporting member disposed in front of the permanent magnet and made of a conductive material, a target supported by the inner supporting member, and disposed around the target. An outer support member made of a conductive material and an anode formed integrally with or separately from the outer support member. Has a large diameter portion that supports and electrically connects the target, and a small diameter portion that is connected to an RF power source, and the outer support member is provided outside the inner support member. It is coaxially arranged and has a cone shape, and the large-diameter portion thereof is integrally formed with the above-mentioned anode, or is separately formed and is supported and electrically connected, and the small-diameter portion thereof. Is provided with a ground, the growth tank is cooled from the surroundings, and an opening for passing a cluster ion beam is formed in the tip wall of the growth tank.

An introduction port may be formed in the gap between the target and the anode so that the sputtering gas flows into the growth tank in the longitudinal direction of the growth tank.

The inside of the growth tank on the tip side may be provided with a tapered guide surface whose diameter gradually decreases toward the opening.

A throttling device for adjusting the diameter of the opening is attached to the tip wall of the growth tank. By adjusting the throttling device, the pressure in the growth tank and the velocity of the cluster ion beam are adjusted. This is possible, and the size of the cluster can be adjusted accordingly.

The growth tank may have a structure in which a cooling tube is provided on the peripheral wall of the growth tank, and CFC gas as a cooling medium is flown through the cooling tube.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a cluster ion beam generator according to the present invention will be described below based on embodiments with reference to the drawings. FIG. 1 shows a boron cluster ion beam generator, which is an embodiment of the cluster ion beam generator according to the present invention, mounted on an implantation cell (implantation cell), and a semiconductor implanter (ion implanter for a semiconductor wafer). It is a figure which shows the whole structure in the state used as an implantation head.

The cluster ion beam generator 1 in this embodiment has a magnetron discharge part 2 and a growth tank 3 (aggregation cell Aggregatio) as its main constituent parts.
n cell). The magnetron discharge unit 2 has a function of converting argon (Ar) gas as a sputtering gas into plasma and sputtering Ar ⁺ onto a boron target formed of a boron solid substance to generate neutral boron B, B ⁺ or the like. .

The growth tank 3 has a function of collecting boron and growing it into boron ion clusters. As described above, the growth tank 3 is mounted in the implantation cell 4 and can implant the boron cluster ion beam into the semiconductor wafer 5.

The structure of the magnetron discharge section 2 will be described. The magnetron discharge part 2 has a cone-shaped inner support member 6 and an outer support member 7 which are coaxially arranged. The inner support member 6 and the outer support member 7 are made of a conductive material. The inner support member 6 functions as a support member for a boron target (cathode) described later and also as a conductive material for power supply. On the other hand, the outer supporting member 7 functions as a conductive material for power supply while integrally forming (coupling) an anode described later or attaching and supporting and electrically connecting an anode made of a conductive material. To do. The inner support member 6 and the outer support member 7 are configured as if they were cone-type coaxial cables.

The expanded portion at the tip of the inner supporting member 6 is formed as an inner large-diameter cylindrical portion (inner large-diameter portion) 8. A boron target 10 is attached to the tip of the inner large-diameter cylindrical portion 8. Supporting and electrically connecting. The boron target 10 functions as a cathode in the magnetron discharge and is also a material to be sputtered.

An annular permanent magnet 1 is provided inside the inner large-diameter cylindrical portion 8 and on the base end side (left side in the figure) of the boron target 10.
1, and a columnar permanent magnet 12 is coaxially arranged at the center position thereof. An annular permanent magnet 11 arranged coaxially
The columnar permanent magnets 12 are arranged such that the polarities thereof are opposite to each other as shown in FIG. 2, and the magnetic field 35 as shown in FIG.
Is formed.

The expanded portion at the tip of the outer supporting member 7 is formed as an outer large-diameter cylindrical portion (outer large-diameter portion) 9, and the tip of the outer large-diameter cylindrical portion 9 has an anode 9'in magnetron discharge. Is integrally formed (coupled), or an anode 9 ′ formed of a conductive material (metal material or the like) is attached and supported separately from the outer large-diameter cylindrical portion 9 for electrical connection. The tip of a supply pipe 13 for supplying argon gas is attached to the cone portion of the outer support member 7 so that the tip end of the supply pipe 13 is open. The space between the cone-shaped inner support member 6 and the outer support member 7 serves as a passage for the argon gas, and the annular gap between the boron target 10 and the anode 9'is the growth chamber 3 for the argon gas.
It is formed as an introduction port 14 into the inside, from which argon gas flows into the growth tank 3 in the longitudinal direction (axial direction) of the growth tank.

The base end of the inner support member 6 is formed as an inner small-diameter cylindrical portion (inner small-diameter portion) 15. A base end portion of the outer support member 7 is formed as an outer small diameter cylindrical portion (outer small diameter portion) 16. A DC voltage of -400 V or an RF power source of 13.56 MHz is connected to the inner small-diameter tubular portion 15 (the RF power source is shown in FIG. 1). On the other hand, the outer small diameter cylindrical portion 16 is grounded. As a result, a discharge voltage is applied between the boron target 10 and the anode 9 ′ that are close to each other.

Next, the structure of the growth tank 3 will be described. The growth tank 3 has a tubular case 17 hermetically (watertightly) joined to the outer large-diameter cylindrical portion 9 or the anode 9 ′ formed integrally with or separately from the outer large-diameter cylindrical portion 9. . The case 17 has a peripheral wall 18 in which a cooling tube 19 is embedded or wound so as to be wound on the outside, and a fluorocarbon gas is flown into the cooling tube 19 as a cooling medium. With this configuration, the inside of the growth tank 3 is -5 to 5
It is cooled to ℃.

An opening 21 is formed in the tip wall 20 of the growth tank 3. Corresponding to this opening 21, the opening degree of the opening 21 (the degree of opening of the opening 21 is provided outside the tip wall 20). Specifically, a diaphragm device 22 for adjusting the opening diameter) is provided. The mechanism of the diaphragm device 22 is the same as a known diaphragm device adopted as the diaphragm device 22 of a camera, and therefore, only the outline of an example will be described here, and detailed description thereof will be omitted.

As shown in FIGS. 3 (a) to 3 (c), the outline thereof includes a plurality of diaphragm blades 2 along the outer periphery of the opening 21.
3 are pivoted by pivot shafts. A cam pin of an annular rotary wheel 26 (which is rotatably supported by a bearing) that meshes with the output gear 25 of the motor 24 and is rotated is slidably engaged in the cam holes of the plurality of diaphragm blades 23.

When the motor 24 rotates, the output gear 25 rotates the ring-shaped rotary wheel 26, and the cam pin slides in the cam hole to rotate the diaphragm blade 23 about the pivot shaft. This changes the opening degree of the opening 21 (see FIG.
The configuration is such that the diameter of the aperture opening in (c) can be changed). The motor 24 that drives the diaphragm blades 23 of the diaphragm device 22 uses the diaphragm control device 2 from the outside of the growth tank 3.
7 is configured to be electrically controllable via the control line 28.

The expansion device 22 adjusts the opening degree of the opening 21 by its opening / closing operation, adjusts the pressure to the implantation cell 4 of the growth tank 3, and the pressure in the growth tank 3 is approximately 0.4 to 1.5 Torr. Hold on. Further, the diaphragm device 22 is
The opening / closing operation adjusts the flow velocity of the cluster ion beam. As will be described later, the size of the cluster can be adjusted by adjusting the opening degree of the opening 21 with the diaphragm device 22, adjusting the pressure in the growth tank 3 and the flow velocity of the cluster ion beam.

Inside the tip of the growth tank 3, a tapered guide surface (conical guide surface) whose diameter gradually decreases toward the opening 21.
29 are formed. The taper angle c of the tapered guide surface 29 is approximately 20 to 30 °. The function of the tapered guide surface 29 will be described later.

The cluster ion beam generator 1 having the above-mentioned configuration is used by being mounted in a sealed state (watertight state) on the proximal end side of the implantation cell 4, and the configuration of the implantation cell 4 will be described. . Implantation cell 4 has a chamber 31 which is sealed by the surrounding wall 30, by the vacuum pump 32 for approximately 10 ^{- 6}
The vacuum below Torr is maintained.

The implantation cell 4 communicates with the growth tank 3 through the opening 21 whose opening is adjusted by the expansion device 22, and the pressure in the growth tank 3 and the pressure in the chamber 3 of the implantation cell 4 are connected to each other. Due to the difference, the argon gas and the cluster ion beam flow out from the growth tank 3 so as to be pulled into the chamber 31. By the diaphragm operation of the diaphragm device 22, the pressure in the growth tank 3 is adjusted, and thereby the flow velocity of the cluster ion beam is adjusted.

The semiconductor wafer 5 is attached so as to face the opening 21 whose opening is adjusted by the diaphragm device 22.
Alternatively, a collimating slit 33 may be provided in the implantation cell 4, and the cluster ion beam may be converged through the collimating slit 33 and strike the semiconductor wafer 5.

The operation of the cluster ion beam generator 1 having the above structure will be described below. Argon gas
It is supplied from the supply pipe 13 to the space between the cone-shaped inner support member 6 and the outer support member 7. This argon gas is introduced into the growth tank 3 through the inlet 14.

The boron target 10 includes an inner support member 6
Is connected to a DC voltage of −400 V or an RF power source via the anode 9 ′ and is grounded via the outer supporting member 7, discharge occurs between the boron target 10 and the anode 9 ′, and the introduction port 14 A part of the argon gas flowing into the growth tank 3 from the above becomes the plasma 34. On the other hand, as shown in FIG. 2, a magnetic field 35 is formed by a permanent magnet.
The plasma 34 is contained in front of (in the figure, on the right side).

Ions A in the enclosed plasma 34
The boron target 10 is sputtered by r ⁺ , and neutral boron B and a small amount of B ⁺ , e ^−, etc. are generated. This neutral boron B is introduced into the growth tank 3 and travels forward in the growth tank 3 along with the forward flow of argon gas, and at the same time, the influence of photons (photons) generated by the plasma 34 is affected. When it is received, it is ionized and becomes B ⁺ . Since the growth tank 3 is cooled, the growth tank 3
Neutral boron B and B ^{+ which} are proceeding inside are aggregated with each other, that is, clustered into a cluster ion beam.

The cluster ion beam thus formed has an opening 21 whose opening is controlled by a diaphragm device 22.
After passing through, it flows into the implantation cell 4, is implanted into the surface of the semiconductor wafer 5, and boron cluster ions are implanted.

The operation of the cluster ion beam generator 1 has been described above. The particularly novel and characteristic configuration of the cluster ion beam generator according to the present invention, and its operation and function will be further described.

The first characteristic configuration of the cluster ion beam generator according to the present invention is the magnetron discharge unit 2.
Is that it has a cone-shaped inner support member 6 and an outer support member 7 that are coaxially arranged. Impedance mismatch is likely to occur due to the difference between the output impedance of the power source (usually 50Ω) and the load impedance of the magnetron discharge part.

In the present invention, the cone-shaped inner and outer supporting members 6,
By adopting No. 7, the problem of impedance mismatch, which was the problem of the conventional cluster ion beam generator 36, is solved, and the inefficient problem of deliberately consuming the reflected power and increasing the power loss. Can be resolved.

By the way, a theory that can solve the impedance mismatch due to the difference between the output impedance of the power source and the load impedance on the load side by making the inner and outer conductive members into a cone type is already known (in 1973).
O.Zinke H. Burnswing distributed in New York, etc.
ehrbuch der Hochfrequenztechnik ". ) By the way.

According to this known technique, the load impedance of the inner conductive member connected to the power source is gradually and equivalently increased without suddenly increasing the load impedance, and therefore the inner conductive member is formed into a cone shape. At the same time, by making the ground side outer conductive member located on the outer side into a cone type,
It is intended to eliminate impedance mismatch. In this known technique, the relationship between the taper angles a and b of the inner support member and the outer support member is calculated by the following equation.

Z = (60 / ε _r ) · In {(cota / 2)
/ (Cotb / 2)} Here, Z is a load impedance and ε _r is a relative dielectric constant.

Although this technique is only a general electromagnetic technique, the present invention uses this general technique by integrally forming the inner support member 6 and the anode for supporting the target of the magnetron discharge part. By applying it to the outer support member 7 that is supported separately, it is possible to realize the function as a support member, the function as a conductive member for power supply, and solve the problem of impedance mismatch. , Is designed to exert a synergistic function. This point is a very unique and new idea. The relationship between the taper angles a and b of the inner support member 6 and the outer support member 7 can be calculated by the above formula.

The second characteristic configuration of the cluster ion beam generator according to the present invention is the introduction port 1 for flowing the argon gas into the growth tank 3 in the magnetron discharge part.
4 structure. In the conventional cluster ion beam generator 36 or the sputtering device, as described above,
The inlet 40 was provided so that the inflowing gas would flow in a direction parallel to the surface of the target 38. As a result, due to the argon gas flowing in parallel to the target 38 from the inlet 40, the neutral boron B or B ⁺ generated in the vicinity of the target 38 by the sputtering is blown off to the side and directly in the growth tank. However, there is a problem in that B (boron) cannot be effectively used because the movement to B is blocked.

In the cluster ion beam generator 1 according to the present invention, the argon gas is not in a direction parallel to the boron target 10 but forward in the longitudinal direction (long axis direction) of the growth tank 3 (rightward in FIGS. 1 and 2). The inlet 14 was configured to proceed to. With the configuration of the introduction port 14, the argon gas flowing in from the introduction port 14 advances forward in the growth tank 3 and spreads toward the center of the growth tank 3 to discharge the argon gas and generate plasma 34. And plasma 3
Neutral B and B ⁺ generated by the sputtering of the boron target 10 by Ar ^{+ in} 4 are carried smoothly forward by the flow of the argon gas flowing forward in the growth tank 3, and efficiently. B (boron) generated by sputtering can be used.

The structure of the inlet 14 is extremely simple.
Although it is a structure, conventionally, it is a plastic for sputtering the target.
Zuma is a target to be generated in the vicinity of the surface of the target.
Argon gas should be introduced almost parallel to the get
Although there was a fixed idea that this invention is based on this idea
It is a very unique idea that does not appear. With this idea
Based on this, the argon gas is parallel to the boron target 10.
Since it is not introduced in any direction,
, B or B in a neutral state generated by sputtering ⁺Is the side
Forward in the growth tank 3 without being blown away
Can effectively utilize boron.
Wear.

In the third characteristic configuration of the cluster ion beam generator according to the present invention, a tapered guide surface 29 is formed inside the growth tank 3 so that the diameter gradually decreases toward the opening 21. It is a composition. As described above, back-scattering occurs in the conventional growth tank 41, and boron ions cannot be efficiently used for implanting a semiconductor wafer. Further, in the conventional growth tank 41, since the flow of boron is a laminar flow, the peripheral part where the flow velocity is smaller than the central part is cooled more, and the clustering due to the aggregation and aggregation of neutral boron and B ⁺ is further enhanced. As a result, as a result, the size of the cluster was not uniform in the central part and the peripheral part.

However, in the cluster ion beam generator 1 according to the present invention, since the tapered guide surface 29 is formed, the laminar flow state is improved on the tip side of the growth tank 3,
Since the flow velocity and cooling of the cluster ions in the growth tank 3 are uniform, the aggregation and aggregation of neutral boron and B ⁺ ions also occur uniformly in the central part and the peripheral part, and the nonuniformity of the cluster size is improved. It

The fourth characteristic configuration of the cluster ion beam generator according to the present invention is a configuration in which the aperture of the opening 21 of the growth tank 3 can be adjusted by the diaphragm device 22.
With this configuration, the pressure in the growth tank 3 and the flow velocity of the cluster ion beam can be controlled, and the cooling state of the cluster can be adjusted to change the state of aggregation and aggregation due to the cooling of boron to appropriately adjust the size of the cluster. . As a result, it has been difficult to reduce the size to 50 or less in the related art, but it is possible to freely adjust the size to 50 or less, or to a preferable size of about 5 to 7.

The above is a very characteristic constitution of the present invention. Further, as a characteristic constitution of the present invention, although the growth tank 3 is conventionally cooled by liquid nitrogen, Freon is used as a refrigerant. However, by adopting a configuration in which the growth tank 3 is cooled by flowing it through a cooling tube, the handling becomes simpler than that of cooling by liquid nitrogen.

The boron cluster ion beam generator used for implanting a semiconductor has been described above as an example of the cluster ion beam generator according to the present invention.
It goes without saying that the present invention is not limited to such embodiments, and there are various embodiments within the technical scope of the claims.

For example, the target material may be a non-metal substance such as boron or T, or T other than boron, depending on the application.
It may be a metal carbide such as iC. Further, the cluster ion beam generator according to the present invention can be used for other purposes such as vapor deposition of an insulating thin film on a substrate or the like, in addition to ion implantation of a semiconductor.

[0055]

According to the cluster ion beam generator of the present invention having the above-mentioned structure, the following effects can be obtained. (1) Impedance mismatch between the power source and the magnetron discharge part can be eliminated or reduced as much as possible, and power loss can be reduced to improve energy efficiency. (2) Since the inflow direction of the argon gas is the longitudinal direction of the growth tank, boron generated by sputtering moves smoothly forward without being blown off sideways by the argon gas, and boron can be efficiently used. (3) Since the tapered guide surface is formed on the tip side of the growth tank, problems such as backscattering and non-uniformity of cluster size can be solved, and clusters of uniform size can be stably and efficiently generated. You can (4) Since the expansion device is provided at the opening of the growth tank, the pressure in the growth tank and the velocity of the flow of the cluster ion beam can be adjusted. As a result, depending on the type and application of the semiconductor substrate to be implanted, etc. The size of the cluster can be adjusted accordingly. (5) It is possible to realize a cluster ion beam generator which has an extremely simple structure, is inexpensive, and is easy to handle, without having a complicated structure as a whole.

[Brief description of drawings]

FIG. 1 is a diagram showing an entire cluster ion beam generator according to the present invention.

FIG. 2 is a diagram for explaining the operation of the cluster ion beam generator according to the present invention.

3 is a diagram illustrating an outline of a diaphragm device, and FIG.
FIG. 3A is a sectional view of the whole, and an enlarged view of a main part thereof is shown in FIG.
It is (b) and FIG.3 (c) is a top view.

FIG. 4 is a diagram illustrating a conventional cluster ion beam generator.

[Explanation of symbols]

1,36 Cluster ion beam system 2 Magnetron discharge part 3,41 Growth tank 4 Implantation cell 5 Semiconductor wafer 6 Inner support member 7 Outer support member 8 Inner large diameter cylinder (Inner large diameter) 9 Outside large diameter cylinder part (outside large diameter part) 9'anode 10,38 Target (cathode) 11, 12, 37 Permanent magnet 13 Ar gas supply pipe 14,40 inlet 15 Inner Small Diameter Tube (Inner Small Diameter) 16 Outside small diameter cylinder part (outside small diameter part) 17 Cylindrical case 19 cooling tubes 20, 43 Tip wall 21 opening 22 Throttle device 27 Aperture control device 29 Tapered guide surface 32 vacuum pump 34, 42 'plasma 35 magnetic field

─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) C23C 14/48 G21K 5/04 H01L 21/265 JISST file (JOIS)

Claims (5)

(57) [Claims] 1. A magnetron discharge unit for generating an ion source for injecting a target of a non-metallic substance or a metal carbide by sputtering by generating plasma by discharging into a gas for sputtering, and the injected ion. A cluster ion beam generator having a cylindrical growth tank for growing a cluster ion beam from a source, wherein the magnetron discharge part is a permanent magnet coaxially arranged with opposite polarities, and the permanent magnet. An inner support member made of a conductive material, a target supported by the inner support member, an outer support member made of a conductive material arranged around the target, and the outer support member. The inner support member has a cone shape, and the large diameter portion thereof supports the target. In addition, the small diameter portion is connected to an RF power source, and the outer supporting member is coaxially arranged outside the inner supporting member and has a cone shape. In the diameter portion, the anode is integrally formed, or formed separately and supported and electrically connected, and the small diameter portion is grounded, the growth tank is cooled from the surroundings, A cluster ion beam generator characterized in that an opening for passing a cluster ion beam is formed in the tip wall thereof. 2. An introduction port is formed in a gap between the target and the anode so that the sputtering gas flows into the growth tank in a longitudinal direction of the growth tank. 1. The cluster ion beam generator according to 1. 3. The cluster ion beam according to claim 1, wherein a tapered guide surface gradually decreasing in diameter toward the opening is provided inside the tip of the growth tank. Generator. 4. A throttling device for adjusting the diameter of the opening is attached to the tip wall of the growth tank, and the pressure in the growth tank and the velocity of the cluster ion beam are adjusted by adjusting the throttling device. Is adjustable, and the size of the cluster can be adjusted by this. 5. The growth tank is provided with a cooling tube on a peripheral wall thereof, and CFC gas is flown as a cooling medium into the cooling tube. Alternatively, the cluster ion beam generator according to item 4.